Transport properties of epitaxial graphene formed on the surface of a metal

The transport properties of epitaxial graphene formed on the surface of a metal substrate have been considered within the approach based on the model Anderson-Newns Hamiltonian. An analytical expression for the density of states of epitaxial graphene has been obtained and the renormalization of the Fermi velocity in doped epitaxial graphene has been investigated. The real part of the dynamic conductance of epitaxial graphene has been examined and the limiting values of conductance have been analyzed. When there is no interaction between the graphene and the substrate, the static conductance of epitaxial graphene takes on the universal value 2e ²/π² ?. The fundamental problems considered in this study are of crucial importance in the study of optical, magneto-optical, thermoelectric, and thermomagnetic properties of epitaxial graphene. The obtained results are of great interest for practical use of epitaxial graphene as a promising material for microwave technology.     

To the theory of adsorption on epitaxial graphene: Model approach

A model of adsorption on epitaxial graphene has been constructed in two stages: first, the density of states of a graphene monolayer adsorbed on a solid substrate has been found and then an adsorbed atom has been placed on the epitaxial graphene thus formed. Metallic and semiconductor substrates have been considered. Charge transfer between the adatom and epitaxial graphene has been calculated. The roles of the substrate and graphene layer in the formation of the electronic state of adatoms have been estimated.     

Origin of anomalous electronic structures of epitaxial graphene on silicon carbide

On the basis of first-principles calculations, we report that a novel interfacial atomic structure occurs between graphene and the surface of silicon carbide, destroying the Dirac point of graphene and opening a substantial energy gap there. In the calculated atomic structures, a quasiperiodic 6x6 domain pattern emerges out of a larger commensurate 6 sqrt [3] x 6 sqrt [3]R30 degrees periodic interfacial reconstruction, resolving a long standing experimental controversy on the periodicity of the interfacial superstructures. Our theoretical energy spectrum shows a gap and midgap states at the Dirac point of graphene, which are in excellent agreement with the recently observed anomalous angle-resolved photoemission spectra. Beyond solving unexplained issues in epitaxial graphene, our atomistic study may provide a way to engineer the energy gaps of graphene on substrates.     

Electronic structure of epitaxial graphene layers on SiC: effect of the substrate

A strong substrate-graphite bond is found in the first all-carbon layer by density functional theory calculations and x-ray diffraction for few graphene layers grown epitaxially on SiC. This first layer is devoid of graphene electronic properties and acts as a buffer layer. The graphene nature of the film is recovered by the second carbon layer grown on both the (0001) and (0001[over]) 4H-SiC surfaces. We also present evidence of a charge transfer that depends on the interface geometry. Hence the graphene is doped and a gap opens at the Dirac point after three Bernal stacked carbon layers are formed.     

金属衬底上石墨烯的红外近场光学

对石墨烯/铜体系开展了系统性的近场光学实验研究,成功观测到了区别于铜衬底的、来自石墨烯的近场光学响应信号,发现在表面台阶几何参数相同的铜衬底上的不同石墨烯样品表现出了截然不同的近场光学响应.     

Chemical approach to the realization of electronic devices in epitaxial graphene

We have shown that nitrophenyl groups may be added to the surface of few‐layer epitaxial graphene (EG) by the formation of covalent carbon–carbon bonds thereby changing the electronic structure and transport properties of EG from near‐metallic to semiconducting. In the present Letter we discuss the opportunities afforded by such chemical processes to engineer device functionality in graphene by modification of the electronic properties without physical patterning.

     

Quantization of electronic states on metal surfaces

An electron in front of a metal surface experiences an attractive force due to the induced image charge. Band gaps in the band structure can prevent a penetration into the metal along certain directions. The Coulomb-like potential supports bound states in front of the surface which correspond to a hydrogen atom in one dimension. These image states can be measured with high resolution by two-photon photoemission. The adsorption of metals modifies the states. If the electrons can penetrate into the metal, quantum-well states can develop corresponding to standing waves in the overlayer. Image states on small islands show the quantization effects due to the lateral localization. The spectroscopy of image states by two-photon photoemission permits the investigation of growth and morphology of deposited metal layers, a well as the illustration of fundamental quantum-mechanical effects.     

Relaxation of the monolayer of epitaxial graphene caused by the electron-phonon interaction with a substrate

Physics of the Solid State - Normal (relative to the substrate) vibrations of single-layer graphene as a whole have been considered in the terms of simple models of epitaxial graphene and...     

Appearance conditions for a semiconducting-substrate-induced gap in the density of states in epitaxial graphene

The density of states in a semiconducting substrate is described with a model assuming a parabolic electronic spectrum. Analytical criteria for the appearance of a gap (gaps) in the density of states in epitaxial graphene are derived, and its (their) parameters (width and position relative to the forbidden gap of the substrate) are found. A way to experimentally verify analytical data is suggested.     

To the theory of unstable states

Deviations of the decay law from exponents are discussing for a long time, however, experimental proofs of such deviations are absent. Here in the general form is shown that the conclusions about non-exponential contributions are due to the disregarding of advanced interactions, i.e. at principally non-relativistic considerations. We consider decay processes in the frame of interactions duration of the quantum field theory. We show that at this basis the usual exponential decay has place.     

Influence of a strong electric field on the decay of autoionizing states formed when multiply charged ions approach a metal surface

Upon collisions of multiply charged ions with a surface, the electric field of the image charge causes Stark splitting of the ion levels; in this case, the Stark states whose energy approaches the electron binding energy in the metal with a decrease in the distance to the surface are selectively occupied. It is shown that consideration of the electric field effect leads to an increase in the probability of Auger transitions in the presence of field. This effect changes our representations about the scheme of occupation of lower levels of multiply charged ions.     

Unoccupied electronic states of epitaxial iron layers on Cu(100)

Inverse photoemission spectra were taken for thin epitaxial iron films on Cu(100). For a film thickness of eight monolayers the observed electronic states are characteristic for a fcc(100) surface. Thed-bands of iron show a ferromagnetic exchange splitting of 1.1 eV, considerably smaller than the bulk value of 1.8 eV, which we observe for film thicknesses above 18 monolayers.     

Determination of the surface states from the ultrafast electronic states in a thermoelectric material

We reveal the electronic structure in Yb Cd₂Sb₂,a thermoelectric material,by angle-resolved photoemission spectroscopy(ARPES)and time-resolved ARPES(tr ARPES).Specifically,three bulk bands at the vicinity of the Fermi level are evidenced near the Brillouin zone center,consistent with the density functional theory(DFT)calculation.It is interesting that the spin-unpolarized bulk bands respond unexpectedly to right-and left-handed circularly polarized probe.In addition,a hole band of surface states,which is not sensitive to the polarization of the probe beam and is not expected from the DFT calculation,is identified.We find that the non-equilibrium quasiparticle recovery rate is much smaller in the surface states than that of the bulk states.Our results demonstrate that the surface states can be distinguished from the bulk ones from a view of time scale in the nonequilibrium physics.     

Quasi-one-dimensional quantized states in an epitaxial Ag film on a one-dimensional surface superstructure

The in-plane energy dispersion of quantized states in an ultrathin Ag film formed on the one-dimensional (1D) surface superstructure Si(111)-(4 x 1)-In shows clear 1D anisotropy instead of the isotropic two-dimensional free-electron-like behavior expected for an isolated metal film. The present photoemission results demonstrate that an atomic layer at the film-substrate interface can regulate the dimensionality of electron motion in quantum films.     

Nucleation of epitaxial graphene on SiC substrate by thermal annealing and chemical vapor deposition

Growth of epitaxial graphene (EG) on silicon carbide (SiC) is regarded as one of the most effective routes to high-quality graphene towards practical applicability. We try to build up a model to illuminate the nucleation process of EG on SiC by thermal decomposition. The model is derived from some experimental results and discloses that surface diffusion plays an important role in the nucleation. For the chemical vapor deposition process used, the organic gas as carbon precursor enables carbon deposition quickly for supporting the growth of high-quality graphene via vapor transformation, so that the nucleated and final graphene becomes almost stress-free and mimics the free-standing graphene. Our findings have a potential in preparing high-quality graphene by controlling the nucleation conditions.     

Influence of isolated adatoms on surface electronic states

The electron spectrum of a crystal with an adsorbed centre is considered, using the mathematical techniques of the quantum mechanical theory of scattering. A special pole approximation is developed which is substantiated by specific features of the problem. Formulas are derived for the adsorption-caused changes of the thermodynamical characteristics and compared with the experimental data. The behaviour of the density of states as an adatom recedes away from the crystal is elucidated. The dynamic effects of surface states are considered using field emission as an example. The formula obtained is compared with experiment.     

Optical spectroscopy of electronic surface states

In this paper a number of optical spectroscopic methods for investigating surface electronic structure are discussed, including reflectance techniques, ellipsometry, surface photoconductivity and surface photovoltage spectroscopy. In addition to electron scattering techniques and UV-photoemission, optical spectroscopic methods have contributed much in recent times to the understanding of electronic surface states on solids. A discussion and comparison is given of the nature and significance of information obtained by these methods and exemplary experimental results are presented to illustrate the contribution of the optical techniques to the present knowledge about surface states. The relation between information obtained from optical measurements and electron spectroscopy is considered.     

Relativistic theory of surface states

A Green's function method is used to investigate the role of relativistic effects in determining the electronic states in a semi-infinite Kronig-Penney model. Various boundary conditions are considered and it is found that relativistic effects do not introduce new surface states.