Difference FTIR spectroscopy of folded phonons in Si/Si1−xGex superlattices

A home-made slow-scan Fourier spectrometer was adapted in the far infrared (10–100 cm^–1) to investigate strained-layer Si/Si_0.5Ge_0.5 superlattices (=SLs) with modulation periodsD=120 Å, 40 Å at liquid helium temperature. The small variations of reflectivity (10^–3) were detected against the large background by modulating the temperature of the sample using a chopped near infrared light emitting diode. The resulting change of sample temperature causes a variable population of the lowest acoustic phonon branch to largerq-values, and a large fraction of the zone folded phonon dispersion (q/D) can be measured by observing difference phonon processes. The measurements outline important SL-properties (modulation periods, phonon dispersion, interface quality and strain effects). X-ray diffraction analysis confirms the FTIR-results.     

Growth,characterization and interfacial reaction of magnetron sputtered Pt/CeO2 thin films on Si and Si3N4 substrates

Growth of magnetron sputtered Pt/CeO₂ thin films on Si and Si₃N₄ were characterized by X‐ray diffraction (XRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and X‐ray photoelectron spectroscopy (XPS). Interaction of Pt/CeO₂ films with Si on Si and Si₃N₄ substrates was extensively investigated by XPS. XRD studies show that films are oriented preferentially to (200) direction of CeO₂. XPS results show that Pt is mainly present in +2 oxidation state in Pt/CeO₂/Si film, whereas Pt⁴⁺ predominates in Pt/CeO₂/Si₃N₄ film. Concentration of Pt⁴⁺ species is more than four times on Si₃N₄ substrate as compared with that on Si. Ce is present as both +4 and +3 oxidation states in Pt/CeO₂ films deposited on Si and Si₃N₄ substrates, but concentration of Ce³⁺ species is more in Pt/CeO₂/Si film. Interfacial reaction between CeO₂ and Si substrate is controlled in the presence of Pt. Pt/Ce concentration ratio decreases in Pt/CeO₂/Si₃N₄ film upon successive sputtering, whereas this ratio decreases initially and then increases in Pt/CeO₂/Si film. Copyright © 2015 John Wiley & Sons, Ltd.     

Electrical and spectroscopic characterization of metal/monolayer/Si devices

A simple technique for vibrational spectroscopy of metal/monolayer/silicon structures is applied to study the interaction of Au, Al, and Ti with alkane monolayers, either assembled onto thin oxides or directly attached to Si. The results are correlated with current-voltage and capacitance-voltage measurements. Alkane films on oxides are found to be robust with respect to the deposition of Au and Al and are partially consumed during the deposition of Ti. In contrast, alkoxy films directly attached to H-terminated Si via an ether linkage are displaced by all three metals. The vibrational data are positively correlated with the electrical data to establish an improved understanding of the interactions at the buried metal/monolayer interface. The results demonstrate extreme sensitivity of the monolayer/metal reactivity to the nature of the film/substrate bonding.     

Synthesis and characterization of quantum dot superlattices.

Gold nanoparticles have been synthesized using n-alkylthiol molecules as a passivating agent. By fixing the length of the thiol chain, it is possible to produce nanocrystal arrays, such as 1D chains, 2D arrays of chains and 3D crystals.     

Synthesis and characterization of Si/Ga Eni Carbon Silicates

Phenylene-gallosilicates were prepared with the same crystalline structure as their aluminum ana-logues. The new Ga-Eni Carbon Silicates (Ga-ECS) phases were investigated by X-ray diffraction, scanning electron microscopy, nuclear magnetic resonance and thermogravimetric analysis, which demonstrated that gallium isomorphously replaced aluminum in the framework of the organ-ic-inorganic hybrids similar to the case of classical zeolites. Hybrid ECS materials were obtained with different types of bridged silsesquioxane precursors that maintained the aluminum-silicate nature of the inorganic moiety. This work confirms a new level of crystal chemistry versatility for this class of materials, and demonstrates the possibility to tailor also the inorganic part of the framework by changing the nature of the trivalent heteroatom.     

Photoluminescence from (Si/SiO2)n superlattices and their use as emitters in [SiO2/Si]n SiO2 [Si/SiO2]m microcavities

Si/SiO2 superlattices are recently under investigation to add optical functionality to silicon based microelectronics. In such superlattices quantum-confinement should drive Si to become a good light emitter. Emission properties can be further improved and controlled by placing the emitter in optical microcavities. In this paper emission properties of (Si/SiO2), superlattices grown by Low Pressure Chemical Vapour Deposition will be compared with the ones obtained by other growth techniques and the origin of the emission will be discussed. Emission properties can be further improved and controlled by placing the emitter in optical microcavities. Optical properties of microcavities produced with standard complementary metal-oxide-semiconductor techniques containing Si/SiO2 superlattices as light emitter will be reviewed and a comparison between properties estimated from calculations and experiments will be given.     

Preparation and characterization of intercalated misfit-layer compounds and natural superlattices

This paper presents the preparation and characterization of the new types of misfit-layer compounds and natural superlattices consisting of Ce_xNb_1−x−y□_yS (Q′) and Ni_zNbS₂ (H) layers, where □ is an atomic deficit at a metal site. A Q′ layer is larger by about 1 Å in thickness than a CeS (Q) layer in (CeS)_1.16NbS₂. They are prepared by chemical vapor transport reaction in a closed silica tube under quasi-equilibrium conditions. The 1Q′/3H type of compound are grown as a single crystal while the 1Q′/4H type of compound is grown as composite crystals with the 1Q′/3H and 1Q/2H compounds. Natural superlattices which have a long period in a direction perpendicular to layers are found. Their chemical formulae are given by (Ce_xNb_1−x−y□_yS)_m(Ni_z)_n−m(NbS₂)_n, where m and n are integers. It is found from an X-ray-photoelectron spectroscopy (XPS) study that Nb affects the valence and the bonding of Ce in the Q′ layers. It is in a higher oxidation state than Nb in NbS₂ layers. A scanning tunneling microscope (STM) study shows that some of the superlattices form a hexagonal supercell in the (a,b)-plane and behave as a narrow-gap semiconductor so that no STM images are obtained at bias voltage less than 0.3 eV.     

Structural characterization of self-assembled multifunctional binary nanoparticle superlattices

Nanocrystals of different size and functionality (e.g., noble metals, semiconductors, oxides, magnetic alloys) can be induced to self-assemble into ordered binary superlattices (also known as opals or colloidal crystals), retaining the size tunable properties of their constituents. We have built a variety of binary superlattices from monodisperse PbS, PbSe, CoPt3, Fe2O3, Au, Ag, and Pd nanocrystals, mixing and matching these nanoscale building blocks to yield multifunctional nanocomposites (metamaterials). Superlattices with AB, AB2, AB3, AB4, AB5, AB6, and AB13 stoichiometry with cubic, hexagonal, tetragonal, and orthorhombic symmetries have been identified. Assemblies with the same stoichiometry can be produced in several polymorphous forms by tailoring the particle size and deposition conditions. We have identified arrays isostructural with NaCl, CuAu, AlB2, MgZn2, MgNi2, Cu3Au, Fe4C, CaCu5, CaB6, NaZn13, and cub-AB13 compounds emphasizing the parallels between nanoparticle assembly and atomic scale crystal growth and providing confidence that many more structures will follow. Recently, we have demonstrated that electrical charges on sterically stabilized nanoparticles in addition to such parameters as particle size ratio and their concentrations can provide the formation of a much broader pallet of binary nanoparticle superlattices as compared with the limited number of possible superlattices formed by hard noninteracting spheres. In this contribution, we demonstrate a large variety of different binary superlattices, provide their detailed structural characterization, and discuss the role of energetic and kinetic factors in the cocrystallization process. We found that Coulomb, van der Waals, charge-dipole, dipole-dipole, and other interactions can contribute equally to cocrystallization, allowing superlattice formation to be dependent on a number of tunable parameters. We present binary superlattices as a new class of materials with a potentially unlimited library of constituents over a wide range of tunable structures.     

Preparation and electrochemical properties of Si0.8Sb/C nanofiber composite anode materials for lithium-ion batteries

Journal of Solid State Electrochemistry - The Si0.8Sb/C nanofiber composite anode materials were synthesized with the method of high-energy ball milling combined with electrospinning. The...     

Epitaxial Growth and Thermoelectric Measurement of Bi2Te3/Sb Superlattice Nanowires

Superlattice nanowires are expected to show further enhanced thermoelectric performance compared with conventional nanowires or superlattice thin films. We report the epitaxial growth of high density Bi₂Te₃/Sb superlattice nanowire arrays with a very small bilayer thickness by pulse electrodeposition. Transmission electron microscopy, selected area electron diffraction and high resolution transmission electron microscopy were used to characterize the superlattice nanowires, and Harman technique was employed to measure the figure of merit (ZT) of the superlattice nanowire array in high vacuum condition. The superlattice nanowire arrays exhibit a ZT of 0.15 at 330 K, and a temperature difference of about 6.6 K can be realized across the nanowire arrays.     

Growth and reactions of SiOx/Si nanostructures on surface-templated molecule corrals

Surface-templated nanostructures on the highly oriented pyrolytic graphite (HOPG) basal plane were created by controlled Cs+- or Ga+)ion bombardment, followed by subsequent oxidation at high temperature, forming molecule corrals. The corrals were then used for template growth of SiOx/Si nanostructures. We demonstrate here that, for SiOx/Si nanostructures formed in controlled molecule corrals, the amount of silicon deposited on the surface is directly correlated with the corral density, making it possible to generate patterned SiOx/Si nanostructures on HOPG. Since the size, depth, position, and surface density of the nanostructures can be controlled on the HOPG, it is possible to produce surfaces with patterned or gradient functionalities for applications in fields such as biosensors, microelectronics, and biomaterials (e.g., neuron pathfinding). If desired, the SiOx structures can be reduced in size by etching in dilute HF, and further oxidation of the nanostructures is slow enough to provide plenty of time to functionalize them using ambient and solution reactions and to perform surface analysis. Organosilane monolayers on surface-templated SiOx/Si nanostructures were examined by X-ray photoelectron spectroscopy, time-of-flight secondary ion mas spectrometry, and atomic force microscopy. Silanes with long alkyl chains such as n-octadecyltrichlorosilane (C18) were found to both react on SiOx/Si nanostructures and to condense on the HOPG basal plane. Shorter-chain silanes, such as 11-bromoundicyltrimethoxysilane (C11) and 3-mercaptopropyltrimethoxysilane (C3) were found to react preferentially with SiOx/Si nanostructures, not HOPG. The SiOx/Si nanostructures were also found to be stable toward multiple chemical reactions. Selective modification of SiOx/Si nanostructures on the HOPG basal plane is thus achievable.     

Syntheses and pharmacological characterization of achiral and chiral enantiopure C/Si/Ge-analogous derivatives of the muscarinic antagonist cycrimine: a study on C/Si/Ge bioisosterism

The C/Si/Ge-analogous compounds rac-Ph(c-C₅H₉)El(CH₂OH)CH₂CH₂NR₂ (NR₂=piperidino; El=C, rac-3a; El=Si, rac-3b; El=Ge, rac-3c) and (c-C₅H₉)₂El(CH₂OH)CH₂CH₂NR₂ (NR₂=piperidino; El=C, 5a; El=Si, 5b; El=Ge, 5c) were prepared in multi-step syntheses. The (R)- and (S)-enantiomers of 3a–c were obtained by resolution of the respective racemates using the antipodes of O,O′-dibenzoyltartaric acid (resolution of rac-3a), O,O′-di-p-toluoyltartaric acid (resolution of rac-3b), or 1,1′-binaphthyl-2,2′-diyl hydrogen phosphate (resolution of rac-3c). The enantiomeric purities of (R)-3a–c and (S)-3a–c were ≥98% ee (determined by ¹H-NMR spectroscopy using a chiral solvating agent). Reaction of rac-3a–c, (R)-3a–c, (S)-3a–c, and 5a–c with methyl iodide gave the corresponding methylammonium iodides rac-4a–c, (R)-4a–c, (S)-4a–c, and 6a–c (3a–c→4a–c; 5a–c→6a–c). The absolute configuration of (S)-3a was determined by a single-crystal X-ray diffraction analysis of its (R,R)-O,O′-dibenzoyltartrate. The absolute configurations of the silicon analog (R)-4b and germanium analog (R)-4c were also determined by single-crystal X-ray diffraction. The chiroptical properties of the (R)- and (S)-enantiomers of 3a–c, 3a–c·HCl, and 4a–c were studied by ORD measurements. In addition, the C/Si/Ge analogs (R)-3a–c, (S)-3a–c, (R)-4a–c, (S)-4a–c, 5a–c, and 6a–c were studied for their affinities at recombinant human muscarinic M₁, M₂, M₃, M₄, and M₅ receptors stably expressed in CHO-K1 cells (radioligand binding experiments with [³H]N-methylscopolamine as the radioligand). For reasons of comparison, the known C/Si/Ge analogs Ph₂El(CH₂OH)CH₂CH₂NR₂ (NR₂=piperidino; El=C, 7a; El=Si, 7b; El=Ge, 7c) and the corresponding methylammonium iodides 8a–c were included in these studies. According to these experiments, all the C/Si/Ge analogs behaved as simple competitive antagonists at M₁–M₅ receptors. The receptor subtype affinities of the individual carbon, silicon, and germanium analogs 3a–8a, 3b–8b, and 3c–8c were similar, indicating a strongly pronounced C/Si/Ge bioisosterism. The (R)-enantiomers (eutomers) of 3a–c and 4a–c exhibited higher affinities (up to 22.4 fold) for M₁–M₅ receptors than their corresponding (S)-antipodes (distomers), the stereoselectivity ratios being higher at M₁, M₃, M₄, and M₅ than at M₂ receptors, and higher for the methylammonium compounds (4a–c) than for the amines (3a–c). With a few exceptions, compounds 5a–c, 6a–c, 7a–c, and 8a–c displayed lower affinities for M₁–M₅ receptors than the related (R)-enantiomers of 3a–c and 4a–c. The stereoselective interaction of the enantiomers of 3a–c and 4a–c with M₁–M₅ receptors is best explained in terms of opposite binding of the phenyl and cyclopentyl ring of the (R)- and (S)-enantiomers. The highest receptor subtype selectivity was observed for the germanium compound (R)-4c at M₁/M₂ receptors (12.9-fold).     

Synthesis and characterization of P/Si flame retardant and its application in epoxy systems

In this report, a novel phosphorus/silicon‐containing reactive flame retardant, hexa(3‐triglycidyloxysilylpropyl)triphosphazene (HGPP), was synthesized and characterized by Fourier transform infrared spectrometry and nuclear magnetic resonance spectra (¹H, ³¹P, and ²⁹Si), respectively. To prepare cured epoxy, HGPP had been co‐cured with diglycidyl ether of bisphenol‐A (DGEBA) via 4,4‐diaminodiphenylsulfone as a curing agent. The mechanical, thermal, and flame retardant properties of the cured epoxy were evaluated by dynamic mechanical analysis, thermogravimetric analysis, and limiting oxygen index (LOI). According to these results, it could be found that incorporation of HGPP in the cured epoxy system showed good thermal stability, high LOI values, and high char yield at high temperature. As moderate loading of HGPP in the epoxy system, its storage modulus and glass transition temperature were higher than those of neat DGEBA. Copyright © 2011 John Wiley & Sons, Ltd.     

Synthesis and characterization of acidic properties of Al-HMS materials of varying Si/Al ratios

HMS and Al-HMS materials with Si/Al ratio in the range 5-45 were synthesized by neutral templating pathway. The as synthesized as well as calcined samples were examined for pore size distribution, surface area and XRD. These investigations confirmed the hexagonal mesoporous structure formation at all Si/Al ratios. The TGA measurements indicated that two types of template species interacting with Si or Al could be distinguished. The acidity and acid strength distribution studies using microcalorimetric NH₃ adsorption indicated that the acidity increases with Al content in the mesoporous structure. The presence of Al in the structure creates a wide variety of acid sites of varying strengths. The heterogeneity of the sites also increases with Al content of the catalysts. The activities for cumene cracking reaction to test acidity of the materials supported the trend obtained from microcalorimetric NH₃ adsorption results.     

Nanomechanical and nanotribological characterization of multilayer self-lubricating Ti/MoS2/Si/MoS2 nanocoating on aluminium-silicon substrate

Ti/MoS₂/Si/MoS₂ multilayer coating was fabricated by a pulse laser deposition method from a titanium, molybdenum disulphide, and silicon targets, and the coating was deposited in layers on aluminium-silicon substrates, at room temperature. The structural analysis and surface morphology of multilayer Ti/MoS₂/Si/MoS₂ coating were analysed using X-ray diffraction, Raman spectroscopy, and scanning electron microscopy integrated with energy dispersive X-ray spectroscopy. Nanomechanical tests were performed on Ti/MoS₂/Si/MoS₂ coating at small loads of 2000 to 6000 μN to study the effect of load on hardness and Young's modulus. Nanoscratch and nanowear tests were conducted on Ti/MoS₂/Si/MoS₂ coating at a low load of 1000 to 5000 μN and 100 to 500 μN, respectively, to study deformation and failure behaviours of coating/substrate system and also their nanotribological properties. The results show that hardness and Young's modulus of Ti/MoS₂/Si/MoS₂ coating decrease with increase in load. A low friction coefficient of 0.09 to 0.16 was observed, which proves that the Ti/MoS₂/Si/MoS₂ coating possesses self-lubricating property. The wear rate of Ti/MoS₂/Si/MoS₂ coating increases 3.3 × 10⁻¹⁰ to 7.8 × 10⁻¹⁰ mm³/Nm with increase in load. Ti/MoS₂/Si/MoS₂ multilayer coating shows a smooth wear track with no cracks and debris on the surface, which attributed plastic flow of softer coating material around the wear track.     

Quantitative profiling of SiGe/Si superlattices by time-of-flight secondary ion mass spectrometry: the advantages of the extended Full Spectrum protocol

The abundance of work on SiGe-based devices demonstrates the importance of the compositional characterization of such materials. However, Secondary Ion Mass Spectrometry (SIMS) characterization of SiGe layers often suffers from matrix effects due to the non-linear variation of ionization yields with Ge content. Several solutions have been proposed in order to overcome this problem, each having its own limitations such as a restricted germanium concentration range, or a weak sensitivity to dopants or impurities. Here, we studied the improvements brought by an alternative protocol: the extended Full Spectrum protocol, which states proportionality between the composition of the secondary ion beam and that of the actual material. Previous studies on this protocol showed that it was extremely precise and reproducible for Ge quantification in a permanent regime, because of minimized matrix effects. In this study we thus investigated its accuracy for the simultaneous quantitative depth profiling of both matrix elements (Si, Ge) and impurities (B, C or P) in strained SiGe/Si superlattices by comparing results with those from more classic protocols. The profiles provided by the extended Full Spectrum protocol were found to be accurate, and to exhibit better properties than classic protocols in terms of signal/noise ratio and signal stability, along with a slight enhancement in depth resolution.     

Surfaces and interfaces in short-period GaAs/AlAs superlattices

Photoelectron spectroscopy, in particular the angular resolved photoemission excited by ultraviolet radiation (ARUPS), provides the most direct experimental information about the electron structure of crystals, both of the bulk and of the low-index surfaces. The sensitivity of the method, as well as its difficulties, when applied to GaAs/AlAs superlattices are described. The new periodicity of these man-made crystals in the direction of their growth (e.g., in the layer-by-layer growth in molecular beam epitaxy), is responsible for opening of the new energy gaps (so-called minigaps) in the electron energy bands of crystals forming the superlattice. In addition to the well-known confinement of electrons at the valence and conduction band edges in long-period superlattices, the electron confinement to the interfaces has also been found in the vicinity of minigaps in short-period superlattices. The role of this confinement in the intensities of electrons photoemitted from superlattice surfaces is discussed. Superlattices with different thicknesses in the topmost layers represent systems with a simple change of the surface atomic structure. The predictions of one-dimensional models about a change of the surface-state energy within the band gap with a change of crystal potential termination are tested for the ideally terminated (1 0 0) surface of a very thin superlattice (GaAs)₂(AlAs)₂. The results of the energy distributions of photoemitted electrons, calculated in the one-step model of photoemission, show that the ARUPS experimental observation of surface-state shifts should be possible, at least in larger minigaps. The results indicate the possibility of a straightforward tuning of the electronic structure of the superlattice surface by geometrical means.     

Comparison of Dynamic Simulations with RBS Measurements of Low Energy Ion Implantation of Sb+ into SiO2/Si Substrates

Antimony ions were implanted into SiO₂/Si substrates at energies of 30 and 50keV at relatively low doses (max. 5×10¹⁵ionscm^–2). The behaviour of the implanted ions was simulated with a dynamic TRIM code, allowing treating alteration of the target in a dynamic mode, i.e. as a function of ion dose. For cases, where the projected range of the implant coincides with the interface, it has been observed that there is significant mixing between the SiO₂ layer and the Si substrate together with a constant value for the O/Si ratio except for a pronounced oxygen surface peak. Whereas in the cases, where the implant is far from the interface, the O/Si ratio shows characteristic oscillations together with the surface peak. For high doses, above about 10¹⁶ionscm^–2, a gradual increase of the sputtering yield of SiO₂ is observed due to Sb incorporation in the substrate. The balance between the sputtering and swelling of the target is shown to be negative up to a fluence of 9.5×10¹⁵ionscm^–2, although the total sputtering yield is more than 1. RBS (Rutherford Backscattering Spectrometry) measurements confirm the mixing at the interface in cases where the latter coincides with the projected range of the implanted ions.     

Crystal Growth and Crystal structure of Gd3Sb5O12: A New Relation between the ccp and the Mn5Si3and Apatite Structures

Red-orange single crystals of Gd₃Sb₅O₁₂ have been grown [hydrothermal conditions, Gd₂O₃ and Sb₂O₃(3:5) in 20% KF solution, 770 K, 1500 bar, 10 days]. The oxide [Mo-Kα, R = 5.4%, I4 3m, with a = 10.8557(4) Å and Z = 4] is isotypic with Pr₃Sb₅O₁₂. Gd and Sb. form a slightly distorted ccp with oxygens occupying 3/4 of the tetrahedral holes, like a fluorite type structure which is also strongly related to the Mn₅Si₃structure type.