多阶有序钙钛矿多铁性材料的高压制备与物性

钙钛矿是研究磁电多铁性最重要的材料体系之一.由于高的结构对称性,在以往的立方钙钛矿晶格中尚未发现多铁现象.另外,现有的单相多铁性材料很难兼容大电极化和强磁电耦合,严重制约多铁性材料的潜在应用.本文简单综述了利用高压高温条件制备的两个多阶有序钙钛矿氧化物的磁电多铁性质.在具有立方晶格的多阶钙钛矿LaMn_3Cr_4O_(12)中,观察到自旋诱导的铁电极化,表明该材料是第一个被发现的具有多铁性的立方钙钛矿体系.在另一个多阶有序钙钛矿BiMn_3Cr_4O_(12)中,随温度降低该材料依次经历了I类多铁相和II类多铁相.正因为这两类不同多铁相的同时出现,BiMn_3Cr_4O_(12)同时展示了大的电极化强度和强的磁电耦合效应,并且通过不同的电场调控可实现四重铁电极化态,为开发多功能自旋电子学器件与多态存储提供了先进的材料基础.     

脉冲强磁场磁特性科学测量系统及其应用

作为一种极端条件下的实验技术,脉冲强磁场下的磁化测量在磁性材料等研究领域发挥着重要作用。武汉国家脉冲强磁场科学中心建成了两套先进的脉冲强磁场磁化测量系统,并已对外开放运行。文章介绍了该测量系统的组成、测量原理和系统特点,以及该系统在量子磁性材料、功能磁性材料、强关联材料等研究领域中的应用,并对未来的发展提出了展望。     

基于磁电耦合效应的基本电路元件和非易失性存储器

磁电耦合效应是指磁场控制电极化或者电场控制磁性的物理现象,它们为开发新型电子器件提供了额外的物理状态自由度,具有巨大的应用潜力.磁电耦合系数作为磁电耦合材料的重要参量,体现了材料磁化和电极化的耦合性能,其随外加物理场的变化可以表现出非线性回滞行为,具备作为非易失存储的物理状态特征.本文讨论了基于磁电耦合效应如何建立起电荷-磁通之间的直接关联,继而实现了第四种基本电路元件并构建了完整的电路元件关系图.在此基础上,研究了多铁性异质结中的非线性磁电耦合效应,并利用其独特的电荷-磁通关联特性,开发了基于磁电耦合系数的电写-磁读型非易失性信息存储、逻辑计算与类神经突触记忆等一系列新型信息功能器件.     

多铁性磁电器件研究进展

多铁性材料可以实现力、电、磁等多物理场之间的相互耦合,在小尺寸、快速响应和低功耗的磁电器件领域具有重要的应用前景.在应用需求的推动下,以具有磁电耦合效应的多铁性材料为基础的磁电器件在设计、微纳加工和性能优化等方面的研究取得了持续的进展.本文简要介绍了基于磁电耦合效应的几种原型器件的最新进展,包括可调谐电感、滤波器、磁电存储器、能量回收器、磁电传感器和磁电天线等,分析总结了各种磁电器件的工作原理及其性能表现,讨论了当前多铁性磁电器件研究所面临的问题和挑战,并提出了改进磁电器件性能的研究方向.     

脉冲强磁场下稀土材料的发光行为研究

脉冲强磁场具有峰值磁场强及扫场速度快的特点,在一个磁场脉冲内可获得从零场到最高磁场强度的全部数据,因而测量结果具有较高的精确度和对比度。稀土发光材料因具有发光谱线丰富、发光效率高的特点,在照明、显示和传感等领域有着广泛的应用。在强磁场作用下,稀土发光材料展现出发光强度和颜色可调的特征,在磁场传感、磁场标定和磁控发光器件等方面有重要应用价值。文章利用武汉国家脉冲强磁场科学中心磁光测量装置,系统地研究了铒、铕等稀土元素掺杂的发光材料在脉冲强磁场作用下的发光光谱、发光强度以及精细能级结构等特征随磁场变化的规律,初步探索了脉冲强磁场下的磁光谱在晶体结构分析、能级结构确定、磁场标定以及磁场传感等方面的应用。     

磁电多铁性材料的宠儿:铁酸铋(BiFeO_3)研究进展的十年回顾

近十几年来,由于对新一代高性能(低能耗、高存储密度、高读写速度)电子功能器件的需求,多铁性材料特别吸引人们的关注。在这些多铁性化合物中,铁酸铋(BiFeO3,简写为BFO)具有高的铁电居里温度和高的反铁磁转变温度,是目前最有应用前景的多铁性材料之一。文章介绍了BFO的晶体结构、铁电极化结构以及反铁磁自旋结构,探讨了在它的基态和高应变状态下,极化与自旋是如何强耦合在一起的。在此基础上,进一步探讨了利用铁电/反铁磁BFO基体系来实现强磁电耦合效应(特别是在低维系统如异质结界面、畴壁或相界中)。文章还对BFO基纳米复合自组装结构中的磁电耦合做了简单介绍。通过对BFO这一多铁性模型体系的研究,可以帮助人们更好地认识铁性材料中衍生出的新奇量子现象,从而利用高等外延生长技术开发和设计新型人造超结构来实现材料的电性、磁性和弹性之间的耦合。     

磁电效应研究进展

多铁体(multiferroic)和磁电体(magnetoelectric material)最近几年已迅速成为物理界和材料界的研究热点,其潜在的应用价值必将随着未来的深入研究而得到进一步展现.围绕磁电效应这一多铁体和磁电体最重要的特性,本文介绍了近期理论和实验研究的多方面进展,其中重点评述了有关磁电效应产生机制,特别是一些新颖机制如界面磁电效应,表面磁电效应,电子型多铁性,螺旋自旋(spiral spin)铁电性,铁涡性(ferrotoroidic)和一些广义磁电效应如拓扑磁电效应等的相关研究.文章最后介绍了基于多铁体和磁电体的一些新型功能性器件,如四态存储器,多铁性内存,磁读电写硬盘等.     

用于激光等离子体中脉冲强磁场产生的电感耦合线圈

脉冲强磁场装置是磁化激光等离子体实验的核心设备.本文研制了一种用于优化脉冲强磁场设备的电感耦合线圈,相对于单匝磁场线圈可以进一步提高磁场强度.通过实验和模拟研究了电感耦合线圈的初级螺线管匝数和直径对磁场强度的影响,发现对于2.4μF电容的放电系统,电感耦合线圈的初级螺线管在35匝、35 mm直径时,可以在5 mm内径的次级磁场线圈中获得最高的峰值磁场强度,是相同尺寸单匝磁场线圈产生磁场强度的3.6倍.在充电电压20 kV时,峰值磁场强度达到19 T,使用铍铜材料的电感耦合线圈克服强磁场中线圈炸裂问题,在35 kV的充电电压下得到了33 T的峰值磁场强度.这种新方法产生了更强的磁场、降低了对回路电感的要求、提升了实验排布的灵活性,为研究强磁场下的激光等离子体行为创造了条件.     

多铁性:物理、材料及器件专题

正编者按作为凝聚态物理与材料物理的前沿分支之一,多铁性研究脱胎于磁电耦合的研究.固体中磁电耦合的概念最初由居里先生提出,至今已有一百多年.在漫长的历史长河中,磁电耦合领域的研究曾经在冷战时期短暂热闹过一阵,但随后是漫长的冷寂期.日内瓦大学的老先生Hans Schmid在磁电耦合领域坐了半辈子冷板凳,在1994年提出了多铁体(multiferroics)这个概念.九年之后,该领域研究才真正引起广泛关注.2003年以Bi Fe O3薄膜的大铁电极化和     

多铁性异质结:1+1≠2

基于异质结界面而得以实现的复合型多铁性或磁电耦合性质本质上是一种呈展现象,即这种性质不是其组成成分单独所具有的特性,这体现了材料体系从简单到复杂过程中的某种跳跃式发展过程,即1+1≠2。文章主要介绍了近年来在多铁性异质结上的一些研究进展,包括界面磁电效应、多铁性隧道结以及基于异质结构的电控磁性等。这些进展表明,异质结研究极有可能是多铁性研究走向实用化的突破口。     

Magnetoelectric multiferroicity and quantum paraelectricity in hexaferrites

Multiferroic materials with coexisting ferroelectric and magnetic orders have attracted tremendous research interests because of their intriguing fundamental physics as well as potential applications in the next-generation multifunctional devices. Hexaferrites with conical magnetic structures are among the most promising single-phase multiferroics because strong magnetoelectric effects can be achieved in them from low temperatures up to room temperature in low magnetic fields. In this review, after briefly introducing the background on multiferroics and classification of hexaferrites, we summarize recent progress in multiferroic hexaferrites, including the mechanisms of spin-induced ferroelectricity, the magnetoelectric phase diagram, giant direct and converse magnetoelectric effects. Furthermore, we present a new mechanism of magnetic-ion-induced displacive polarization in hexaferrites, which leads to quantum paraelectricity and quantum electric-dipole liquid in M-type hexaferrites.     

Studies on multiferroic materials in high magnetic fields

In this article, studies on the magnetoelectric effects of multiferroic materials in high magnetic fields, particularly pulsed magnetic fields, are discussed and results for some representative materials are presented. In the discussions on representative materials, the relationship between the crystallographic symmetry and the linear magnetoelectric effect in Cr₂O₃ is introduced. Then drastic changes in polarization caused by magnetic transitions are discussed through a case study of manganites with a perovskite-type structure. In addition, high field studies on the magnetoelectric effects in BiFeO₃, which is an exceptional multiferroic material, are presented and discussed in the framework of the Landau-Ginzburg theory.     

Electric field control of magnetism in multiferroic heterostructures

We review the recent developments in the electric field control of magnetism in multiferroic heterostructures, which consist of heterogeneous materials systems where a magnetoelectric coupling is engineered between magnetic and ferroelectric components. The magnetoelectric coupling in these composite systems is interfacial in origin, and can arise from elastic strain, charge, and exchange bias interactions, with different characteristic responses and functionalities. Moreover, charge transport phenomena in multiferroic heterostructures, where both magnetic and ferroelectric order parameters are used to control charge transport, suggest new possibilities to control the conduction paths of the electron spin, with potential for device applications.     

激发态电荷转移有机体的多铁性研究

随着人们对多铁性的深入了解,越来越多不同类型的有机多铁材料被合成出来.激发态电荷转移有机体的电荷转移网络是由一个提供电子的分子(给体donor,D~+)和一个接受电子的分子(受体acceptor,A~-)有序排列后构成的.D~+A~-长程有序排列,其激发态(激子)具有较长寿命和±1/2自旋,这是产生室温铁电性和铁磁性的根本原因.激发态容易受外场刺激,因此光照、磁场、电场、应力等能够很好地调控这类材料的铁电极化、磁矩和相应的磁电耦合系数.激发态电荷转移有机体不仅大大丰富了室温多铁材料体系,而且可以为开发新型多功能电子器件提供材料基础和技术储备.     

Artificial multiferroic heterostructures for an electric control of magnetic properties

The control of magnetism by electric fields is an important goal for future low-power spintronics devices. This partly explains the intensified recent interest for magnetoelectric multiferroic materials and heterostructures. The lack of ferro- or ferrimagnetic–ferroelectric materials with large magnetoelectric coupling between the two orders has spurred intensive research on artificial multiferroics combining ferroelectric or piezoelectric materials and ferromagnets. In this paper we review synthetically the potential of thin-film-based heterostructures in which a magnetic film is in contact with a ferroelectric or piezoelectric one to obtain an electric control of magnetic properties. This electric control either results from a strain-induced magnetoelectric coupling, a charge-driven one, or from the modulation of an interfacial exchange-bias interaction.     

Emergent ferroelectricity in disordered tri-color multilayer structure comprised of ferromagnetic manganites

Multiferroic materials,showing the coexistence and coupling of ferroelectric and magnetic orders,are of great technological and fundamental importance.However,the limitation of single phase multiferroics with robust magnetization and polarization hinders the magnetoelectric effect from being applied practically.Magnetic frustration,which can induce ferroelectricity,gives rise to multiferroic behavior.In this paper,we attempt to construct an artificial magnetically frustrated structure comprised of manganites to induce ferroelectricity.A disordered stacking of manganites is expected to result in frustration at interfaces.We report here that a tri-color multilayer structure comprised of non-ferroelectric La_(0.9)Ca_(0.1)MnO_3(A)/Pr_(0.85)Ca_(0.15)MnO_3(B)/Pr_(0.85)Sr_(0.15)MnO_3(C) layers with the disordered arrangement of ABC-ACBCAB-CBA-BAC-BCA is prepared to form magnetoelectric multiferroics.The multilayer film exhibits evidence of ferroelectricity at room temperature,thus presenting a candidate for multiferroics.     

顺磁性La2/3Sr1/3MnO3层对Bi0.8Ba0.2FeO3薄膜多铁性能的影响

界面效应在提升异质结构材料的多铁性能方面有着重要的作用. 本文采用脉冲激光沉积技术在SrTiO₃(STO)基片上制备了Bi_0.8Ba_0.2FeO₃(BBFO)/La_2/3Sr_1/3MnO₃(LSMO)异质结. X-射线衍射图谱表明异质结呈现单相外延生长, 利用高分辨透射电镜进一步证实了BBFO为四方相结构. X-射线光电子能谱证实异质结中只存在Fe³⁺ 离子, 没有产生价态的变化, 揭示了异质结铁电和铁磁性的增强与BBFO/LSMO的界面有关. 同时, 测试了磁电阻(MR)和磁介电(MD), 当磁场强度为0.8 T, 温度为70 K时, MR约为-42.2%, MD约为21.2%. 并且发现在180 K时出现磁相的转变. 实验结果揭示出异质界面效应在提升材料的多铁性和磁电耦合效应方面具有超常的优点, 是加快多铁材料实际应用的有效途径.     

Mn3TeO6 – a new multiferroic material with two magnetic substructures

From magnetic susceptibility, dielectric permittivity, electric polarization and specific heat measurements we discover spin‐induced ferroelectricity and magnetoelectric coupling in Mn₃TeO₆ and observe two successive magnetic transitions at low temperatures. A non‐ferroelectric intermediate magnetic state occurs below 23 K and a multiferroic ground state emerges below 21 K. Moreover, Mn₃TeO₆ is a candidate for a multiferroic material where two types of incommensurate spin structures, cycloidal and helical, coexist. Theoretically, both spin substructures may contribute to the macro electric polarization via different mechanisms. This could open new ways of manipulating the ferroelectric polarization in a multiferroic material. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Al-doping-induced magnetocapacitance in the multiferroic AgCrS_2

In this paper, multiferroics and magnetocapacitive effect of triangular-lattice antiferromagnet Ag Al0.02Cr0.98S2 are investigated by magnetic, ferroelectric, pyroelectric current and dielectric measurement. We find that it is a multiferroic material and the magnetocapacitive effect reaches a factor of up to 90 in an external field of 7 T. The results imply the further possibility of synthesizing the magnetocapacitive materials by modifying the frustrated spin structure in terms of a few B-site doping nonmagnetic ions.     

Critical thickness for ferroelectricity and magnetoelectric effect in multiferroic tunnel junction with symmetrical and asymmetrical electrodes

The critical thickness for ferroelectricity and magnetoelectric effects have been investigated for the multiferroic tunnel junction with symmetric and asymmetric metallic electrodes based on density functional theory. The ferroelectric polarization of a barrier is still retained down to 2 unit cells scale for the asymmetric multiferroic tunnel junction. The greater cause, leading to the reduction, or even complete elimination for the critical thickness, is the difference in the work function for the two asymmetrical electrodes. In addition, the effect of magnetoelectric coupling is obvious. The asymmetric multiferroic tunnel junction provides the possibility for the miniaturising and multifunctional spin electronic devices.