Numerical study on lateral mode behavior of 660-nm InGaP/AlGaInP multiple-quantum-well laser diodes

Theoretical analysis for InGaP/AlGaInP laser diodes with different ridge waveguide structures is performed to investigate the lateral mode behavior using advanced device simulation. The internal physical mechanisms including temperature-induced changes in the refractive index profile, spatial hole burning effect, lateral carrier distribution, and gain profile variation with increasing input current are discussed by theoretical calculation to analyze the effects of different ridge structures on the lateral mode behavior of 660-nm AlGaInP laser diodes. The simulation results show that the use of narrow and shallow ridge geometry is the approach to obtaining single mode operation. Furthermore, it is found that the different values of the ridge height cause the lateral carrier distribution within the active region to be varied, which is also an important factor in determining the emergence of the first order lateral mode in addition to the geometry-dependent waveguide cutoff condition.     

低阈值单横模852nm半导体激光器

基于波导理论、等效折射率方法,设计并制备了非对称波导隔离双沟结构脊型边发射激光器,最终获得了低闽值单基侧模852 nm激光器.详细研究了不同脊型台深宽比参数设计对激光器侧向模式特性的影响规律,实现了腔面未镀膜情况下脊型波导边发射激光器的单基侧模稳定输出,同时激射波长可以精确调谐到852 nm;工作电流达到150 mA,工作温度30℃;斜率效率最高可达0.89 nW/mA,光谱半宽小于1 nm.研究结果为进一步实现超窄线宽激光器提供了参考和借鉴,并且为实现激光器稳定输出提供了实验基础.     

Experimental demonstration of PT‐symmetric stripe lasers

Recently, the coexistence of a parity‐time (PT) symmetric laser and absorber has gained tremendous research attention. While PT‐symmetric lasers have been observed in microring resonators, the experimental demonstration of a PT‐symmetric stripe laser is still absent. Here, we experimentally study a PT‐symmetric laser absorber in a stripe waveguide. Using the concept of PT‐symmetry to exploit the light amplification and absorption, PT‐symmetric laser absorbers have been successfully obtained. In contrast to the single‐mode PT‐symmetric lasers, the PT‐symmetric stripe lasers have been experimentally confirmed by comparing the relative wavelength positions and mode spacing under different pumping conditions. When the waveguide is half‐pumped, the mode spacing is doubled and the lasing wavelengths shift to the center of every two initial lasing modes. All these observations are consistent with the theoretical predictions and well confirm the PT‐symmetry breaking.

     

Study of Semiconductor Laser Diode with Circularly Symmetric Waveguide

A semiconductor laser diode with circularly symmetric waveguide is proposed, its property is studied by scalar finite-difference time-domain method (SFD-TDM). The results show coupling loss between the semiconductor laser diode and single mode fiber is reduced effectively, the minimum coupling loss is 0.7 dB.     

Photonic spin Hall effect in PT symmetric metamaterials

We proposed and demonstrated that PT symmetric metamaterials could be used to achieve enhanced spin Hall effect (SHE) of light. We find that when laser mode is excited in PT symmetric system, the enhanced SHE could be obtained in both transmitted and reflected beams. In addition, as exceptional points (EPs) of PT symmetric system can happen for both p- and s-polarizations, the enhanced SHE of reflected light can function for both horizontally and vertically polarized incident beams. Particularly, these EPs can lead to unidirectional reflectionlessness, asymmetric SHE with maximum contrast ratio of 48 is obtained by launching light beams near EPs. Our work opens up a new path to obtain enhanced transverse displacement for both reflected and transmitted light and enables more opportunities in manipulating photonic SHE.     

High power semiconductor laser array with single-mode emission

The semiconductor laser array with single-mode emission is presented in this paper. The 6-μ m-wide ridge waveguides (RWGs) are fabricated to select the lateral mode. Thus the fundamental mode of laser array can be obtained by the RWGs. And the maximum output power of single-mode emission can reach 36 W at an injection current of 43 A, after that, a kink will appear. The slow axis (SA) far-field divergence angle of the unit is 13.65°. The beam quality factor M² of the units determined by the second-order moment (SOM) method, is 1.2. This single-mode emission laser array can be used for laser processing.     

10 Gb/s symmetric WDM-PON using stable multi-longitudinal mode Brillouin/SOA fiber laser as upstream colorless source

We propose a stable multi-longitudinal Brillouin/semiconductor fiber laser(BSFL) as the upstream source in a bidirectional single-fiber wavelength-division multiplexing-passive optical network(WDM-PON).The downstream wavelength serves as the pump of the BSFL.Brillouin-frequency-shifted(～10.8 GHz) upstream carrier is generated to suppress the Rayleigh backscattering and back reflection-induced crosstalk.The stable multi-longitudinal operation of the BSFL,attributed to the four-wave mixing(FWM) effect in the semiconductor optical amplifier(SOA) reduces the difficulty of generating a stable single-longitudinal fiber laser-based upstream carrier.Bidirectional symmetric transmission at 10 Gb/s over a 12.5-km single mode fiber with less than 2-dB power penalty is demonstrated.     

Single mode lasing in transversely multi‐moded PT‐symmetric microring resonators

Conventional techniques for transverse mode discrimination rely on introducing differential external losses to the different competing mode sets, enforcing single‐mode operation at the expense of additional losses to the desirable mode. We show how a parity‐time (PT) symmetric design approach can be employed to achieve single mode lasing in transversely multi‐moded microring resonators. In this type of system, mode selectivity is attained by judiciously utilizing the exceptional point dynamics arising from a complex interplay of gain and loss. The proposed scheme is versatile, robust to deviations from PT symmetry such as caused by fabrication inaccuracies or pump inhomogeneities, and enables a stable operation considerably above threshold while maintaining spatial and spectral purity. The experimental results presented here were obtained in InP‐based semiconductor microring arrangements and pave the way towards an entirely new class of chip‐scale semiconductor lasers that harness gain/loss contrast as a primary mechanism of mode selectivity.

     

Continuous‐wave vertically emitting photonic crystal terahertz laser

Compact semiconductor light sources with high performance continuous‐wave (CW) and single mode operation are highly demanded for many applications in the terahertz (THz) frequency range. Distributed feedback (DFB) and photonic crystal (PhC) quantum cascade (QC) lasers are amongst the leading candidates in this field. Absorbing boundary condition is a commonly used method to control the optical performance of a laser in double‐metal confinement. However, this approach increases the total loss in the device and results in a large threshold current density, limiting the CW maximum output power and operating temperature. In this letter, a robust surface emitting continuous‐wave terahertz QC laser is realized in a two‐dimensional PhC structure by a second order Bragg grating extractor that simultaneously provides the boundary condition necessary for mode selection. This results in a 3.12 THz single mode CW operation with a 3 mW output power and a maximum operation temperature (T_max) of 100 K. Also, a highly collimated far‐field pattern is demonstrated, which is an important step towards real world applications.     

单频窄线宽分布布拉格反射光纤激光器研究

分析了单频窄线宽分布布拉格反射（DBR）光纤激光器的单模工作条件,在此基础上算出单模工作区域,制作了一个单频窄线宽分布布拉格反射光纤激光器。该激光器在波长为975.5nm的半导体激光器抽动下,在1556.91nm波长处。当抽运功率为55.35mW时输出功率可达1.43mW,频宽小于1.2MHz(受测量仪器分辨率限制）。经测量,该输出激光是稳定的单纵模输出。     

Single mode lasers based on monolithic integration of ridge waveguides with 2D photonic crystal waveguides

The monolithic combination of active light sources with photonic crystal (PC) waveguide components is a key building block for future highly integrated photonic circuits. We demonstrate the coupling of light from an InGaAs/AlGaAs ridge waveguide laser to a monolithically integrated 2D PC waveguide. The PC guide is formed by removing three or five rows in a triangular lattice of air rods etched into the semiconductor. A tapered ridge waveguide geometry is demonstrated to improve coupling efficiency, so that maximum output powers of up to 10 mW from the PC waveguide are achieved. The resulting coupled cavity laser shows single mode emission with side mode suppression ratios > 35 dB over a broad range of injection currents.     

Intermittent frequency offset lock of a symmetric three-mode stabilized He-Ne laser to an iodine stabilized He-Ne laser

There is a need for an intense, unmodulated single-frequency stabilized laser light that guarantees absolute optical frequency in a rapid laser calibration or an ultra-high resolution interferometer. To obtain such a light, we developed a new laser system that uses an intermittent frequency offset lock of a symmetric three-mode stabilized He-Ne laser to an iodine stabilized He-Ne laser. The proposed laser system provides two operational modes: (1) independent and (2) slave mode. In the independent mode, frequency of the three-mode laser is stabilized via control of frequency difference between two intermode beats. The resultant output is a single longitudinal mode light of maximum intensity that locates at the top of the gain curve. Frequency instability of 8X10^-12 (at a sampling time of 100 s) which is better than conventional stabilized lasers is attained in the independent mode. Slow optical frequency drift during the independent mode is periodically corrected by the offset lock to the iodine stabilized laser (slave mode), resulting in accurate reset of the frequency drift. After reset of the frequency deviation, the three-mode laser is again operated in the independent mode. Due to such intermittent offset lock, duty factor of the iodine stabilized laser was reduced to a few % of continuous operation.     

Quasiparity‐Time Symmetric Microdisk Laser

Recent developments in parity‐time (PT) symmetric systems have ushered in unique photonic devices with enhanced functionalities. While single‐mode laser emission has been demonstrated in such systems, the current designs face severe challenges in applications, either due to their stringent requirement on fabrication precision or nonscalability to larger devices. Here, we demonstrate a general mechanism to achieve single‐mode lasing in coupled cavities, which relies on external mode coupling and overcomes these drawbacks. We find significant gain enhancement for selected modes by external coupling, and our experiments have confirmed the resulting single‐mode laser emission in size‐mismatched photonic molecules (PMs), when only one constituent cavity is pumped. This behavior persists for a wide range of pump power, from transparent threshold to gain saturation, and it is highly tolerant of fabrication imprecisions. In addition, the output intensity of such single‐mode lasers also displays enhancement when compared with the same PMs under uniformly pumping. We believe our results will both advance the understanding of different coupling scenarios in coupled cavities and improve the characteristics of onchip laser sources for practical applications.     

Single-step growth of InGaAsP/InP laser array on patterned InP substrate

Arrays of five InGaAsP/InP single mode junction-defined buried stripe heterostructure lasers are described. The laser arrays were grown on multi-channeled InP substrate by single-step liquid phase epitaxy. The buried double heterostructure and the lateral current confining structure were formed in the same growth process. InGaAsP layer growth is dominated by the preferred orientation, with (1 0 0) growth favored over other directions. As a result of low-temperature single-step growth, the device yield is high. These laser arrays are characterized by output power close to 0.6 W, high quantum efficiency, symmetrical far-field patterns and excellent linearity of the light–current curve. Stable single transverse mode operation obtained up to 600 mW emitted power.     

Stable high optical power in quantum well lasers with profiled reflection and tapered structures

A comprehensive model is presented to study quantum well tapered lasers and quantum well stripe lasers with profiled reflectivity output facets and to obtain lateral stability in high power semiconductor laser. Simulation of semiconductor lasers is performed by numerically solving space-dependent coupled partial differential equations for the complex optical forward and backward waves, carrier density distribution and temperature distribution. The coupled equations are solved by finite difference beam propagation method. The effect of nonlinear parameters like Kerr and linewidth enhancement factors, and precise dependence of linewidth enhancement factor and gain factor on the carrier density and temperature are considered in this paper. We use modal reflector in stripe lasers to confine the lateral mode to the stripe centre and provide the stable operation. We also use unpumped window to reduce the facet temperature and improve the catastrophic optical mirror damage level of tapered lasers.     

超低频率全正色散半导体可饱和吸收镜被动锁模光纤激光器

 通过延长激光器环形腔腔长,利用高浓度掺杂的单模掺镱光纤,搭建了超低重复频率、全正色散结构的半导体可饱和吸收镜被动锁模光纤激光器。激光器的中心波长、重复频率、平均功率及单脉冲能量分别为1 064 nm,281.5 kHz,11 mW和39 nJ。为了稳定中心波长,实现自启动,激光器腔体内接入了一个带通滤波器。该激光器运行稳定,无调Q不稳定现象,极大减小了半导体可饱和吸收镜被损坏的机会。     

Single higher-order transverse mode operation of a radially polarized Nd:YAG laser using an annularly reflectivity-modulated photonic crystal coupler

We demonstrate single higher-order transverse mode operation of a radially polarized Nd:YAG laser by using a polarization-selective and reflectivity-modulated output coupler. A narrow annular region with low reflectivity fabricated in a photonic crystal mirror behaves so as to select a higher-order transverse mode of a cylindrically symmetric laser beam. A double-ring-shaped radially polarized TM(02) mode beam is stably generated.     

半导体激光器混沌输出的延时特征和带宽

外腔延时特征和带宽是影响混沌激光应用的两个重要参量.本文将一个单路光反馈的半导体激光器输出的激光部分地注入到另一个双路滤波光反馈的半导体激光器中,从而构成一个具有外光注入的双路滤波光反馈半导体激光器系统,即主从激光器系统,用于抑制混沌激光的延时特征并研究其带宽.数值研究了外光注入系数、反馈强度、抽运因子和滤波器带宽对系统输出混沌激光的延时特征的影响,然后将该系统对延时特征的抑制效果和具有外光注入的单路光反馈半导体激光器系统、具有外光注入的双路光反馈半导体激光器系统、具有外光注入的单路滤波光反馈半导体激光器系统以及无光注入双路滤波光反馈半导体激光器系统进行对比和分析,结果表明本文提出的方案对延时特征的抑制效果最好.然后在本文提出的具有外光注入的双路滤波光反馈半导体激光器系统中,延时特征被有效抑制的参数条件下研究系统输出混沌激光的带宽,结果表明,通过适当选择参数的取值,本文提出的方案可以提高系统输出混沌激光的带宽.     

2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography

We report a type-I Ga Sb-based laterally coupled distributed-feedback(LC-DFB) laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20℃ with side mode suppression ratio(SMSR) as high as 24 dB.The maximum single mode continuous-wave output power is about 10 mW at room temperature(uncoated facet). A low threshold current density of 230 A/cm~2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.     

大功率1060nm双沟脊波导分布反馈激光器

研制了双沟型脊波导结构的1 060 nm分布反馈激光器.和普通脊波导激光器相比,该器件能提高在连续条件下的侧模稳定性.单模最大输出功率达到300 mW边模抑制比大于45 dB.采用该激光器进行泵浦周期性极化铌酸锂晶体倍频实验,得到的绿光功率为3 mW,该方案将成为低成本绿光光源实现方案.