Electronic properties of monolayer copper selenide with one-dimensional moiré patterns

Strain engineering is a vital way to manipulate the electronic properties of two-dimensional (2D) materials. As a typical representative of transition metal mono-chalcogenides (TMMs), a honeycomb CuSe monolayer features with one-dimensional (1D) moiré patterns owing to the uniaxial strain along one of three equivalent orientations of Cu(111) substrates. Here, by combining low-temperature scanning tunneling microscopy/spectroscopy (STM/S) experiments and density functional theory (DFT) calculations, we systematically investigate the electronic properties of the strained CuSe monolayer on the Cu(111) substrate. Our results show the semiconducting feature of CuSe monolayer with a band gap of 1.28 eV and the 1D periodical modulation of electronic properties by the 1D moiré patterns. Except for the uniaxially strained CuSe monolayer, we observed domain boundary and line defects in the CuSe monolayer, where the biaxial-strain and strain-free conditions can be investigated respectively. STS measurements for the three different strain regions show that the first peak in conduction band will move downward with the increasing strain. DFT calculations based on the three CuSe atomic models with different strain inside reproduced the peak movement. The present findings not only enrich the fundamental comprehension toward the influence of strain on electronic properties at 2D limit, but also offer the benchmark for the development of 2D semiconductor materials.     

单轴、双轴应变Si拉曼谱应力模型

本文依据拉曼光谱原理, 基于Secular方程及拉曼选择定则分别获得了单轴、 双轴(001), (101), (111)应变Si材料应变张量与拉曼谱线移动的定量关系, 并在此基础上, 基于广义胡克定律最终建立了单轴、双轴(001), (101), (111)应变Si材料拉曼谱峰与应力的理论关系模型. 该模型建立过程详细、系统, 所得结果全面、量化, 可为应变Si材料应力的测试分析提供重要理论参考.     

Epitaxial growth of highly strained antimonene on Ag(111)

The synthesis of antimonene, which is a promising group-V 2D material for both fundamental studies and technological applications, remains highly challenging. Thus far, it has been synthesized only by exfoliation or growth on a few substrates. In this study, we show that thin layers of antimonene can be grown on Ag(111) by molecular beam epitaxy. High-resolution scanning tunneling microscopy combined with theoretical calculations revealed that the submonolayer Sb deposited on a Ag(111) surface forms a layer of AgSb₂ surface alloy upon annealing. Further deposition of Sb on the AgSb₂ surface alloy causes an epitaxial layer of Sb to form, which is identified as antimonene with a buckled honeycomb structure. More interestingly, the lattice constant of the epitaxial antimonene (5 Å) is much larger than that of freestanding antimonene, indicating a high tensile strain of more than 20%. This kind of large strain is expected to make the antimonene a highly promising candidate for roomtemperature quantum spin Hall material.     

Formation of Two-Dimensional AgTe Monolayer Atomic Crystal on Ag(111) Substrate

We report on the formation of two-dimensional monolayer AgTe crystal on Ag(111) substrates. The samples are prepared in ultrahigh vacuum by deposition of Te on Ag(111) followed by annealing. Using a scanning tunneling microscope(STM) and low electron energy diffraction(LEED), we investigate the atomic structure of the samples.The STM images and the LEED pattern show that monolayer AgTe crystal is formed on Ag(111). Four kinds of atomic structures of AgTe and Ag(111) are observed:(i) flat honeycomb structure,(ii) bulked honeycomb,(iii)stripe structure,(iv) hexagonal structure. The structural analysis indicates that the formation of the different atomic structures is due to the lattice mismatch and relief of the intrinsic strain in the AgTe layer. Our results provide a simple and convenient method to produce monolayer AgTe atomic crystal on Ag(111) and a template for study of novel physical properties and for future quantum devices.     

Selective formation of ultrathin PbSe on Ag(111)

Two-dimensional (2D) semiconductors, such as lead selenide (PbSe), locate at the key position of next-generation devices. However, the ultrathin PbSe is still rarely reported experimentally, particularly on metal substrates. Here, we report the ultrathin PbSe synthesized via sequential molecular beam epitaxy on Ag(111). The scanning tunneling microscopy is used to resolve the atomic structure and confirms the selective formation of ultrathin PbSe through the reaction between Ag₅Se₂ and Pb, as further evidenced by the theoretical calculation. It is also found that the increased accumulation of Pb leads to the improved quality of PbSe with larger and more uniform films. The detailed analysis demonstrates the bilayer structure of synthesized PbSe, which could be deemed to achieve the 2D limit. The differential conductance spectrum reveals a metallic feature of the PbSe film, indicating a certain interaction between PbSe and Ag(111). Moreover, the moiré pattern originated from the lattice mismatch between PbSe and Ag(111) is observed, and this moiré system provides the opportunity for studying physics under periodical modulation and for device applications. Our work illustrates a pathway to selectively synthesize ultrathin PbSe on metal surfaces and suggests a 2D experimental platform to explore PbSe-based opto-electronic and thermoelectric phenomena.     

Epitaxial fabrication of AgTe monolayer on Ag(111) and the sequential growth of Te film

Transition-metal chalcogenides (TMCs) materials have attracted increasing interest both for fundamental research and industrial applications. Among all these materials, two-dimensional (2D) compounds with honeycomb-like structure possess exotic electronic structures. Here, we report a systematic study of TMC monolayer AgTe fabricated by direct depositing Te on the surface of Ag(111) and annealing. Few intrinsic defects are observed and studied by scanning tunneling microscopy, indicating that there are two kinds of AgTe domains and they can form gliding twin-boundary. Then, the monolayer AgTe can serve as the template for the following growth of Te film. Meanwhile, some Te atoms are observed in the form of chains on the top of the bottom Te film. Our findings in this work might provide insightful guide for the epitaxial growth of 2D materials for study of novel physical properties and for future quantum devices.     

Strain-induced changes to the electronic structure of germanium

Density functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the [001], [110] and [111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the [111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications.     

Electrochemical formation and properties of thin polyaniline films on Au(111) and p-Si(111)

The specific aspects of phase formation phenomena involved in electrodeposition of conducting polymer layers are critically discussed. The mechanism of formation and the properties of electrodeposited thin polyaniline (PANI) films on Au(111) and p-Si(111) are investigated by means of transient measurements, cyclic voltammetry, electrochemical impedance spectroscopy and atomic force microscopy (AFM). Experimental results show that the initial stages of PANI electrodeposition on Au(111) can be described by a model including progressive appearance and preferential 2D growth of polymer islands. The electropolymerization process on p-Si(111) substrates is preceded by anodic formation of an inhomogeneous thin SiO₂ layer giving rise to a progressive appearance and growth of 3D PANI islands. The electrochemical redox properties of electrodeposited PANI films on p-Si(111) are influenced strongly by the electronic band structure of silicon. PACS 81.10.Aj; 82.45.Wx; 82.45.Vp     

Surface plasmon–exciton transition in ultra-thin silver and silver iodide films

Silver thin films in the thickness range 2–10 nm produced by thermal evaporation onto glass substrates were systematically iodized and carefully characterized by X-ray diffraction, atomic force microscopy (AFM) and optical absorption spectroscopy. While the uniodized films are X-ray amorphous in keeping with their quasi-continuous nature and 2D islanded structure, briefly iodized films showed characteristic beta AgI structure. Most interestingly, AFM of Ag films revealed uniform triangle-shaped embryos whose shape does not change appreciably upon iodization. Optical absorption spectra of uniodized Ag films show intense surface plasmon resonance (SPR) features with maxima at 440, 484 and 498 nm for the films of thicknesses 2, 5 and 10 nm, respectively, with 5 nm films showing properties characteristic of optimally matched dielectric and electronic properties of the substrate and sample, respectively. Finally, an interesting and unique SPR–exciton phase transition is observed as the ultra-thin films are progressively iodized. These Ag and AgI films could be promising candidates for plasmonic and nanophotonic applications. PACS 78.66.-w; 73.20.Mf; 71.35.Cc; 42.70; 68.37.Ps; 42.82.-m     

Initial growth processes of Ag on polar and non-polar semiconductor substrates

Initial growth processes of Ag on both InSb(111)A and α-Sn(111) substrates at room temperature have been investigated by using reflection high-energy electron diffraction and Auger electron spectroscopy. The results show that the growth features are quite different for each system: Ag grows in the Stranski-Krastanov mode on InSb(111)A, while for Ag/α-Sn(111) the majority of the deposited Ag atoms are consumed in forming an Ag-Sn alloy. Discrete variational-Xα calculations showed that an onset of such growth modes is closely related to interfacial chemical bonding features for both systems.     

Electronic states of a C70 monolayer on the surface of Ag(111)

We have investigated the electronic states of a C(70) monolayer on the surface of Ag(111) (1 ML C(70)/Ag(111)) using synchrotron radiation photoelectron spectroscopy and soft x-ray absorption spectroscopy techniques. The experimental data exhibit metallic properties and at least 2.6 e(-) charge transfer per C(70) molecule. The screening effect of Ag(111) on the electronic structure of C(70) is remarkable; it greatly reduces or even eliminates the on-site Hubbard energy. The work functions of the C(70) multilayer and monolayer are determined as 4.53 eV and 4.52 eV respectively. The energy levels of C(70) align with the Fermi level of the Ag(111) substrate, and the shift of the vacuum level caused by C(70) adsorption is negligible. Potassium doping indicates that 1 ML C(70)/Ag(111) can still accommodate about nine electrons and that the sample remains metallic at any doping level.     

Single atomic manipulation and writing with scanning tunnelling microscopy at low temperatures

In the work reported in this paper,we have used a low-temperature scanning tunnelling microscope (LT-STM) system to manipulate accurately single atoms.We show how we can use a LT-STM to image and modify a bulk Ag(111) surface and manipulate Ag atoms from substrate and evaporated adsorbates on Ag(111) substrates.We present a synergistic combination of SM-induced modification and ordered arrays of nanometre-scale structures.In particular,we demonstrate the ability to modify Ag atomic nanometre structures on the Ag(111) substrate,and some English letters and a Chinese character can be written by single Ag atoms coming from the substrate and evaporated adsorbates on Ag(111),In this way ,we supply an effective basis to explore the fundamental physical properties of a nanometre structure and to develop nanotechnology with a bottom-up approach,     

Two‐Dimensionally Ordered Plasmonic and Magnetic Nanostructures on Transferable Electron‐Transparent Substrates

Discovery of new plasmonic behaviors from nanostructured materials can be greatly accelerated by the ability to prepare and characterize their near‐field behaviors with high resolution in a rapid manner. Here, an efficient and cost‐effective way is reported to make 2D periodic nanostructures on electron‐transparent substrates for rapid characterization by transmission electron microscopy. By combining nanosphere lithography with a substrate float‐off technique, large areas of electron‐transparent periodic nanostructures can be achieved. For this study, the synthesis of plasmonic nanostructures of Ag, magnetic nanostructures of Co, and bimetallic nanostructures of Ag–Co are investigated. Characterization of the materials by a combination of transmission electron microscopy, far‐field optical spectroscopy, and magnetization measurements reveals that this new approach can yield useful nanostructures on transparent, flexible, and transferable substrates with desirable plasmonic and/or magnetic properties.     

The critical thickness of silicon-germanium layers grown by liquid phase epitaxy

Silicon-germanium layers are grown from metallic solution on (100) and (111) silicon substrates. On (111) Si, coherently strained dislocation-free SiGe layers are obtained with thicknesses larger than predicted by the current models of misfit-induced strain relaxation. A comprehensive characterisation by imaging, diffraction, and analytical electron microscopy techniques is carried out to determine the critical thickness, study the onset of plastic relaxation, and explain the particular growth mechanisms leading to an unexpectedly high thickness of elastically strained SiGe layers. A vertical Ge concentration gradient and the formation of step edges on the layers, where lateral strain relaxes locally, explain the high critical thickness. The model of Matthews and Blakeslee is modified in order to match the experimental observations for solution-grown SiGe layers. Received: 29 July 1999 / Accepted: 29 July 1999 / Published online: 27 October 1999     

Anomalous strain effect in heteroepitaxial SrRuO3 films on (111) SrTiO3 substrates

We report comprehensive investigations into the structure of high-quality (111)-oriented SrRuO₃ films on SrTiO₃ substrates to elucidate the effect of (111) heteroepitaxial strain. We found that SrRuO₃ film with a thickness of ～ 40 nm is compressively strained in plane on the substrate with full coherency. Nevertheless, the out-of-plane spacing is almost the same as in the bulk, which is at odds with the conventional paradigm. By probing a series of half-order Bragg reflections using synchrotron-based x-ray diffraction combined with analyses of the scanning transmission electron microscopy images, we discovered that the heteroepitaxial strain is accommodated via significant suppression of the degree of c⁺ octahedral tilting and the formation of three equivalent domain structures on the (111) SrTiO₃ substrate. This anomalous effect sheds light on the understanding of an unconventional paradigm of film-substrate coupling for the (111) heteroepitaxial strain.     

The growth mode of aluminium on silver (111)

The geometric and electronic structures occuring during the growth of Al on a single crystal Ag(111) surface have been studied using a combination of low energy electron diffraction (LEED), Auger electron spectroscopy (AES), energy loss spectroscopy (ELS) and work function measurements. The Auger signal versus deposition time plots, which were used to monitor the growth mode, are shown to behave in an identical fashion to that expected for layer-by-layer (Frank-van der Merwe) growth. LEED was used to determine the lateral periodicity of thin Al films and shows that Al forms, at very small coverages, 2D islands which have the same structure as the Ag(111) substrate and which grow together to form the first monolayer. At substrate temperatures of 150 K a well defined (1 × 1) structure with the same orientation as the underlying Ag(111) can be seen up to at least 12 ML. After completion of the third monolayer the ELS spectrum approached that observed for bulk aluminium. At a coverage of 3 ML the work function decreases by 0.4 eV from the clean silver value.     

Electronic structure of Ag adsorbed on Si(111); experiment and theory

Experimental results (low energy electron loss spectroscopy) and band structure calculations relating to the early stages of Ag growth on a Si(111) surface are presented. Crystallography and thermal desorption kinetics studies of this interface, previously published, gave rise to the following conclusions. At room temperature and below 200°C, two-dimensional (2D) (111) epitaxial layers develop on top of a first ordered layer (√3 × √3), while at higher temperatures three-dimensional (3D) clusters develop over this first layer. Low energy electron loss experiments were performed at various surface coverages θ. They display different evolutions according to the growth modes. For the 2D epitaxial growth, one observes the disappearance of the peaks characteristic of a Si surface and the onset of Ag induced peaks located at 7.1 and 4.6 eV at completion of the √3 layer. These peaks narrow and shift to the bulk Ag excitation energies at 7.5 and 4 eV when a second Ag layer is deposited. In order to explain these results, we present a theoretical calculation of the electronic density of states of the interface using a tight binding approximation. This calculation accounts for the development of the Ag d band from the √3 coverage range to the (111) epitaxial Ag planes. The evolution of the spectra when θ is increased is discussed in view of these results.     

Initial growth process and surface structure of Ag on Si(111) studied by low-energy Ion-Scattering Spectroscopy (ISS) and LEED-AES

The growth process of silver on a Si(111) substrate has been studied in detail by low-energy ion-scattering spectroscopy (ISS) combined with LEED-AES. Neon ions of 500 eV were used as probe ions of ISS. The ISS experiments have revealed that the growth at room temperature and at high temperature are quite different from each other even in the submonolayer coverage range. The following growth models have been proposed for the respective temperatures. At room temperature, the deposited Ag forms a two-dimensional (2D) island at around 2/3 monolayer (ML) coverage, where the Ag atoms are packed commensurately with the Si(111)1 substrate. One third of the substrate Si surface remains uncovered there. Then it starts to develop into Ag crystal, and at a few ML coverage a 3D island of bulk Ag crystal grows directly on the substrate. An intermediate layer, which covers uniformly the whole surface before the growth of Ag crystal, does not exist. At high temperatures (>~200°C), the well-known Si(111)√3-Ag layer is formed as an intermediate layer, which consists of 2/3 ML of Ag atoms and covers the whole surface uniformly. These Ag atoms are embedded in the first double layer of the Si substrate. It is concluded that the formation of the √3 structure needs relatively high activation energy which may originate from the large displacement of Si atoms owing to the embedment of the Ag atoms, and does not proceed below about 200°C. The most stable state of the Ag atoms on the outermost Si layer is in the shape of an island, both for the Si(111) surface and for the Si(111)√3-Ag surface.     

（110）应变对立方相Ca2Si能带结构及光学性质的影响

采用第一性原理贋势平面波方法对(110)应变下立方相Ca2P0.25Si0.75的能带结构及光学性质进行模拟计算,全面分析了应变对Ca2P0.25Si0.75能带结构、光学性质的影响。计算结果表明：在92%~100%压应变范围内随着应变的逐渐增大导带向低能方向移动,价带向高能方向移动,带隙呈线性逐渐减小,但始终为直接带隙;在100%~102%张应变范围内随着应变的增加,带隙呈逐渐增大,应变达到102%直接带隙最大Eg=0.54378eV;在102%~104%应变范围内随着应变的增加,带隙逐渐减小;当应变大于104%带隙变为间接带隙且带隙随着应变增大而减小。施加应变Ca2P0.25Si0.75的介电常数、折射率均增大;施加压应变吸收系数增加,反射率减小;施加张应变吸收系数减小,反射率增加。综上所述,应变可以改变Ca2P0.25Si0.75的电子结构和光学常数,是调节Ca2P0.25Si0.75光电传输性能的有效手段。     

（110）应变对立方相Ca2Si能带结构及光学性质的影响

采用第一性原理贋势平面波方法对(110)应变下立方相Ca2P0.25Si0.75的能带结构及光学性质进行模拟计算,全面分析了应变对Ca2P0.25Si0.75能带结构、光学性质的影响。计算结果表明：在92%~100%压应变范围内随着应变的逐渐增大导带向低能方向移动,价带向高能方向移动,带隙呈线性逐渐减小,但始终为直接带隙;在100%~102%张应变范围内随着应变的增加,带隙呈逐渐增大,应变达到102%直接带隙最大Eg=0.54378eV;在102%~104%应变范围内随着应变的增加,带隙逐渐减小;当应变大于104%带隙变为间接带隙且带隙随着应变增大而减小。施加应变Ca2P0.25Si0.75的介电常数、折射率均增大;施加压应变吸收系数增加,反射率减小;施加张应变吸收系数减小,反射率增加。综上所述,应变可以改变Ca2P0.25Si0.75的电子结构和光学常数,是调节Ca2P0.25Si0.75光电传输性能的有效手段。