High density electron-hole plasma in Si induced by femtosecond pulses

High electron and hole (e-h) densities of about 10²² cm^-3 have been produced in silicon, using 620 nm wavelength laser pulses of 100 fs duration. These density values are determined by measuring the dependence of the pulse self-reflectivity on its energy. By comparison with a fully non-linear model of light propagation, we show that dissipation processes inside the plasma are dominated by e-h collisions, with a characteristic time of 3 × 10^-16s. The onset of melting within 100 fs and its nature, considering the high plasma density, are also discussed in view of scattered light measurements.     

Structural transitions in silicon induced by a femtosecond laser pulse: The role of an electron-hole plasma and phonon-phonon anharmonicity

It is shown by the methods of time-resolved self-reflection and linear reflection that irradiation of a silicon target by a 100-fs laser pulse induces successive structural transitions of the target material to new crystal and liquid metal phases, which can occur during the laser pulse or 0.1–10³ ps after the pulse termination, depending on the excitation conditions. The thresholds of these structural transitions are determined, and “’soft” phonon modes involved in them are identified, which represent “hot” short-wavelength LA modes. The dynamics of the structural transitions in silicon in the time interval from 0.1 to 10³ ps is described using the model of instability of phonon modes caused by an electron-hole plasma and intra-and intermode phonon-phonon anharmonic interactions     

飞秒强激光脉冲在等离子体中的自压缩

文章从激光等离子体相互作用的非线性薛定谔方程出发,理论研究了飞秒强激光脉冲在等离子体中的自压缩行为.结果表明在一定范围内随着激光脉冲宽度、激光强度的增大以及等离子体密度的减小,飞秒强激光脉冲在等离子体中传播的自压缩现象越明显.另外通过适当设定参量得到了近似稳定传播的基孤子.     

Ultrafast electron dynamics of material surfaces under the action of femtosecond laser pulses

Electric collector investigations of the singleand multi-shot femtosecond laser ablation of optical-quality surfaces of different materials, including aluminum, copper, titanium, silicon, and graphite, show that the emission of erosion plasma is significantly lower than the energy density of laser ablation of these materials and replaces the dominant electron emission at lower energy densities. I–V characteristics and cumulative dependences of the collector signal are studied in the emission mode. The observed dependences of the electron and plasma emission signals on the laser pulse energy density are discussed.     

Recombination processes in atomic clusters irradiated by superintense femtosecond laser pulses

Various mechanisms of recombination of electrons with multiply charged atomic ions in atomic clusters irradiated by superintense femtosecond laser pulses are discussed. All of the recombination mechanisms are shown to take a time considerably longer than the laser pulse duration and, hence, they can develop only in a homogeneous, fairly rarefied cluster plasma after pulse termination. All autoionization states of multiply charged ions in a dense cluster plasma have been found to be destroyed by the Holtsmark electric field.     

Direct creation of black silicon using femtosecond laser pulses

Using a direct femtosecond laser surface structuring technique, an array of equally spaced parallel nanostructure-textured microgrooves on silicon was produced that causes a dramatic reduction of the treated silicon reflectance. The processed area appears velvet black at all viewing angles. Throughout the visible region, the reflectance of the blackened surface is less than 5%. The antireflection effect of the processed surface also extends to the mid-infrared wavelength range. Furthermore, this technique has a potential in reducing silicon reflectance at terahertz frequencies and even in millimeter wavelength range.     

Excitation and dissociation of polyatomic molecules under the action of femtosecond infrared laser pulses

The effect of high-intensity femtosecond laser pulses (100–200 fs) in the near (0.8–1.8 μm) and medium (4.6–5.8 μm) IR ranges on the CF₂HCl, CF₃H, (CF₃)₂C=C=O, and C₄F₉COI molecules is examined. Irradiation of CF₂HCl and CF₃H molecules by 0.8-to 1.8-μm laser pulses with intensities of >40 TW/cm² (>4 × 10¹³ W/cm²) makes them dissociate to yield CF₃H and CF₄, respectively. The key mechanism of the dissociation of these molecules is field ionization and fragmentation. The excitation of the stretching vibrations of the C=O bond in the (CF₃)₂C=C=O and C₄F₉COI molecules by 4.5-to 5.8-μm femtosecond pulses produced no detectable dissociation up to a fluence of ∼0.5 J/cm² (or a intensity of ∼2.5 TW/cm²). Probable explanations of this observation are discussed. Original Russian Text ? V.M. Apatin, V.O. Kompanets, V.B. Laptev, Yu.A. Matveets, E.A. Ryabov, S.V. Chekalin, V.S. Letokhov, 2007, published in Khimicheskaya Fizika, 2007, Vol. 26, No. 4, pp. 18–25.     

Strength properties of an aluminum melt at extremely high tension rates under the action of femtosecond laser pulses

The dynamics of the melting of a surface nanolayer and the formation of thermal and shock waves in metals irradiated by femtosecond laser pulses has been investigated both experimentally and theoretically. A new experimental-computational method has been implemented to determine the parameters of laser-induced shock waves in metallic films. Data on the strength properties of the condensed phase in aluminum films at an extremely high strain rate ($ \dot V $ \dot V /V ∼ 10⁹ s⁻¹)under the action of a laser-induced shock wave have been obtained.     

飞秒激光烧蚀硅表面产生微纳结构过程中激光脉冲数目的影响

为了研究飞秒激光脉冲数目与硅表面形貌之间的关系,在相同的SF6气体氛围下,改变照射硅表面的飞秒激光脉冲数,发现在飞秒激光照射下由硅表面形成的微型锥状尖峰的高度与飞秒激光脉冲数呈现一种非线性关系.通过对该关系的研究有利于找出在制造具有较高吸收效率的高微型锥状尖峰的"黑硅"的实验条件,有利于基于"黑硅"材料的光电器件转化效...     

Effect of polarization on femtosecond laser pulses structuring silicon surface

Arrays of conical-like spikes can be formed on silicon surface after irradiated with femtosecond laser pulses in ambient of SF₆ or N₂. In this article, we report our observations on how the shape of the spikes formed on silicon surface varies with the polarization of laser beam. The experimental results show that, with circular polarized laser irradiation, the shape of the spikes is conical; however, with linearly polarized laser irradiation, the spikes show elliptic conical shape, and the long-axes are perpendicular to the direction of the polarization of laser beam. The asymmetric shape of spikes produced by linearly polarized laser beam can be explained by considering the polarization dependence of Fresnel-refraction.     

飞秒脉冲激光辐照下硅表面光致荧光特性

采用钛宝石飞秒脉冲激光对单晶硅在空气中进行辐照,研究了硅表面在不同扫描速度和能量密度下的光致荧光特性。光致荧光谱（PL）测量表明,在样品没有退火处理的情况下,激光扫描区域观察到橙色荧光峰（603 nm）和红色荧光带（680 nm附近）。扫描电子显微镜（SEM）测量显示,在飞秒脉冲激光辐照硅样品的过程中硅表面沉积了大量的纳米颗粒。利用傅里叶变换红外光谱仪（FT-IR）检测到了低值氧化物SiOx（x＜2）的存在,并且结合能谱仪（EDS）检测结果发现氧元素在光致发光中起着重要作用。研究表明：603 nm处橙色荧光峰来自微构造硅表面低值氧化物SiOx,680 nm附近红色荧光带来自量子限制效应。同时样品表面硅纳米颗粒的尺寸和氧元素的浓度分别决定了红色荧光带和橙色荧光的强度,通过调节飞秒激光脉冲的扫描速度和能量密度,可以有效地控制样品的荧光强度。     

Nanostructuring of semiconductor surfaces under the action of femtosecond pulses

The nanostructures with dimensions (110–250 nm), much smaller than the wavelength of laser light, obtained on surfaces of various semiconductors under the action of laser ablation by femtosecond pulses are studied. Nanostructures obtained at large angles of incidence and under the action of interference of two femtosecond pulses on the surface of the samples are analyzed. Original Russian Text ￠ R.A. Ganeev, T.Q. Jia, 2008, published in Optika i Spektroskopiya, 2008, Vol. 105, No. 1, pp. 154–159.     

Ablation and cutting of planar silicon devices using femtosecond laser pulses

Although lasers are generally able to machine silicon, the major material in many microsystems applications, doing so without influencing the physical properties of the bulk material remains an important challenge. Ultrafast lasers, in particular, with their potential to precisely ablate all kinds of solid materials, are able to perform such processes with high efficiency and accuracy. This article starts with an overview of the general interaction of ultrafast laser radiation with semiconductors, explaining the absorption processes and different fluence regimes for the ablation of silicon. Major parameter influences, especially for cutting processes in thin silicon, are described. By varying pulse energies, beam shaping methods, the beam polarization, and temperatures, the cutting quality and speed can be significantly influenced. One important quality aspect, besides kerf widths and surface roughness, is the amount of back-side chipping when cutting brittle materials. Achievements in speed enhancement using linear focus shapes are presented, with cutting speeds up to five times higher than by conventional spot-focusing. On the other hand, laser processes that cut with a spot focus offer the possibility of free-shape cutting, which is explained using the example of wafers carrying silicon chips with highly increased package densities. Received: 10 December 2002 / Accepted: 20 January 2003 / Published online: 28 May 2003 RID="*" ID="*"Corresponding author. Fax: +49-511/2788-100, E-mail: nb@lzh.de     

Inscription of optical waveguides in crystalline silicon by mid-infrared femtosecond laser pulses

For the first time to the authors' knowledge, optical waveguides have been inscribed in bulk crystalline silicon by ultrafast laser radiation. Femtosecond laser pulses of 40-nm spectral bandwidth, 1-kHz repetition rate, and 1.7-microJ on-target energy were applied at a mid-infrared wavelength of 2.4 microm to induce nonlinear absorption in the focal volume of the beam. By scanning the laser beam with respect to the sample, buried optical waveguides have been created that were single mode at 1550 and 1320 nm and guided light only with its polarization perpendicular to the sample's surface. Propagation losses with an upper limit of 1.2 dB/cm or less were observed throughout the optical telecommunications band.     

Polarization-dependent ablation of silicon using tightly focused femtosecond laser vortex pulses

We demonstrate experimentally that, in a tight focusing geometry, circularly polarized femtosecond laser vortex pulses ablate material differently depending on the handedness of light. This effect offers an additional degree of freedom to control the shape and size of laser-machined structures on a subwavelength scale.     

空气中飞秒激光自聚焦等离子体通道的电导特性

通过电学探测法,采用不同焦距的聚焦透镜,在不同激光能量、不同极性外加电压的条件下,对大气中的飞秒激光自聚焦等离子体电离通道特性进行了实验研究。发现激光脉冲经不同焦距的聚焦透镜作用后均存在较长的电离通道,通道的等效电阻率有所变化,通常电阻率的最大值出现在透镜的几何焦点附近,并且焦距越长,此电阻率的局部峰值点离几何焦点位置越近。在外加不同极性电压时,自由电子受到所加静电场作用力、洛仑兹力以及有质动力的共同作用。焦点前,通道电流变化不明显,加正向电压产生的电流略微大于加负向电压时的电流;焦点后则是加负向电压产生的电流大于加正向电压时的电流。     

空气中飞秒激光自聚焦等离子体通道的电导特性

 通过电学探测法,采用不同焦距的聚焦透镜,在不同激光能量、不同极性外加电压的条件下,对大气中的飞秒激光自聚焦等离子体电离通道特性进行了实验研究。发现激光脉冲经不同焦距的聚焦透镜作用后均存在较长的电离通道,通道的等效电阻率有所变化,通常电阻率的最大值出现在透镜的几何焦点附近,并且焦距越长,此电阻率的局部峰值点离几何焦点位置越近。在外加不同极性电压时,自由电子受到所加静电场作用力、洛仑兹力以及有质动力的共同作用。焦点前,通道电流变化不明显,加正向电压产生的电流略微大于加负向电压时的电流;焦点后则是加负向电压产生的电流大于加正向电压时的电流。