Structural and optical properties of Mn-doped ZnO nanocrystalline thin films with the different dopant concentrations

The transparent nanocrystalline thin films of undoped zinc oxide and Mn-doped (Zn_1−xMn_xO) have been deposited on glass substrates via the sol–gel technique using zinc acetate dehydrate and manganese chloride as precursor. The as-deposited films with the different manganese compositions in the range of 2.5–20 at% were pre-heated at 100 °C for 1 h and 200 °C for 2 h, respectively, and then crystallized in air at 560 °C for 2 h. The structural properties and morphologies of the undoped and doped ZnO thin films have been investigated. X-ray diffraction (XRD) spectra, scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS) were used to examine the morphology and microstructure of the thin films. Optical properties of the thin films were determined by photoluminescence (PL) and UV/Vis spectroscopy. The analyzed results indicates that the obtained films are of good crystal quality and have smooth surfaces, which have a pure hexagonal wurtzite ZnO structure without any Mn related phases. Room temperature photoluminescence is observed for the ZnO and Mn-doped ZnO thin films.     

Modeling and preparation of practical optical filters

Multilayer bandpass and bandstop filters have been produced using electron beam evaporation. Initially bandstop filter is modeled with non absorbing zinc sulphide (ZnS) and zinc selenide (ZnSe). When the absorption data was incorporated for the said materials significant absorption was observed at shorter wavelengths of the spectral band restricting the practical usage of the filter. ZnS and ZnSe were then replaced by dispersive silicon dioxide (SiO₂), tantalum penta oxide (Ta₂O₅) and titanium dioxide (TiO₂) along with their absorption and the filters are optimized to get desired bandpass and bandstop data. Bandpass and bandstop filters with desired performance were experimentally characterized with two combinations SiO₂/Ta₂O₅/glass and SiO₂/TiO₂/glass. The measured average transmission for both combination (bandpass) in the pass band was about 92% with T < 1% in the stop band. Slightly narrow bandwidth was observed for SiO₂/TiO₂/glass as compared to SiO₂/Ta₂O₅/glass which is attributed to layers densification. Similarly T_avg ⩾ 80% was achieved for two combinations of bandstop filters with T < 0.1% in the stop band. The structure and surface morphology of the prepared filters were characterized by X-ray diffraction and scanning electron microscopy. XRD analysis reveals amorphous structure. SEM analysis also reveals that the layers are compact and have good surface quality.     

Stress and morphological development of CdS and ZnS thin films during the SILAR growth on (1 0 0)GaAs

Cadmium sulfide and zinc sulfide films were grown on (1 0 0)GaAs substrate by successive ionic layer adsorption and reaction (SILAR) technique from aqueous precursor solutions at room temperature and normal pressure. The stress development of the thin films was characterized by laser interferometry as a function of the thickness of the films. The morphology and roughness of the films were monitored by atomic force microscopy. Additionally the crystallinity and crystallite size were analyzed by X-ray diffraction and composition by electron spectroscopy for chemical analysis. The CdS thin films had significantly higher stress level and also better crystallinity compared with ZnS thin films. Both films were polycrystalline and cubic, but the CdS thin films followed the substrate (1 0 0) orientation, whereas the ZnS films were (1 1 1) orientated. The roughness vs. film thickness curves of both films followed each other in shape, but the CdS films consisted of smaller particles.     

Ultrasound with low intensity assisted the synthesis of nanocrystalline TiO2 without calcination

A novel method has been developed for the preparation of nano-sized TiO₂ with anatase phase. Nanoparticles with diameter about 6 nm were prepared at a relatively low temperature (75 °C) and short time. The synthesis was carried out by the hydrolysis of titanium tetra-isopropoxide (TTIP) in the presence of water, ethanol, and dispersant under ultrasonic irradiation (500 kHz) at low intensity. The results show that variables such as water/ethanol ratio, irradiation time, and temperature have a great influence on the particle size and crystalline phases of TiO₂ nanoparticles. Characterization of the product was carried out by different techniques such as powder X-ray diffraction (XRD), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM) and UV–vis spectroscopy.     

Influence of porosity on laser damage threshold of sol–gel ZrO2 and SiO2 monolayer films

Monolayer ZrO₂ sol–gel and physical vapor deposition (PVD) films were prepared by spin method and electron beam evaporation method, respectively. Monolayer sol–gel SiO₂ films were prepared with the dip-coating method from acid and base catalyzed SiO₂ sols, respectively. Some of the SiO₂ base films were subsequently treated in saturated ammonia gas for 20 h. The laser induced damage threshold (LIDT) of each film was measured. Properties of the films were analyzed by using Stanford photo-thermal solutions (SPTSs), ellipsometer, atomic force microscopy (AFM) and optical microscopy. The experimental results showed that porous ratio is an essential factor to decide the LIDT for sol–gel films, which benefits the pressure exerted on the film or substrate by the moving particle to dissipate. The films with lower thermal absorption and higher porous ratio have higher LIDT.     

High resolution electron energy loss spectroscopy surface studies of hydrogenated detonation nano-diamond spray-deposited films

Nano-diamond films composed of 3–5 nm grains prepared by the detonation method and spray deposited onto silicon substrates were examined by high resolution electron energy loss spectroscopy (HR-EELS), Raman spectroscopy and transmission electron microscopy. The HR-EEL spectrum of the annealed and hydrogenated films displays dominant C–H losses at 360–365 meV; the diamond optical phonon and its overtones. These results suggest that the films reveal well defined hydrogenated diamond surfaces on the nanometric scale. Detailed analysis of the diamond optical phonon overtone revealed a red-shift of the basic C–C vibration by 5 meV. We attribute this shift to a phonon quantum confinement effect detected by HR-EELS spectroscopy.     

Nanostructure materials for destruction of warfare agents and eco-toxins prepared by homogeneous hydrolysis with thioacetamide: Part 1—zinc oxide

Zinc sulphide (ZnS) nanoparticles were prepared by homogeneous hydrolysis of zinc sulphate and thioacetamide (TAA) at 80 °C. After annealing at temperature above 400 °C in oxygen atmosphere, zinc oxide (ZnO) nanoparticles were obtained. The ZnS and ZnO nanoparticles were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission microscopy (HRTEM), selected area electron diffraction (SAED), by BET and BJH methods used for surface area and porosity determination. The photocatalytic activity of the as-prepared ZnO samples was determined by the decomposition of Orange II in the aqueous solution under UV irradiation of 365 nm of wavelength.     

Enhanced superconducting properties in epitaxial FeSe thin films with self-assembled Fe3O4 nanoparticles

In this paper we report epitaxial tetragonal iron selenide thin films grown on single crystal SrTiO₃ (STO) (0 0 1) and MgO (0 0 1) substrates by a pulsed laser deposition (PLD) technique. Deposition temperature and annealing process are found to be critical for achieving the tetragonal phase and the optimum superconducting properties of the films. The critical transition temperature of the thin films ranges from 2 K to 11.5 K depending on the deposition temperature and annealing condition. The samples with higher critical transition temperatures show better film crystallinity along with self-assembled Fe₃O₄ nanoparticles (～15 nm in average particle size) in the films according to both X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis. Besides the better crystallinity achieved in the films, the formation of Fe₃O₄ nanoparticles could assist the formation of the tetragonal FeSe phase and thus lead to the enhanced superconducting properties.     

Synthesis and characterization of light emitting Eu2O3 films on Si substrates

We have studied the optical and structural properties of Eu₂O₃ thin films grown by RF magnetron sputtering on Si substrates. The films have been annealed in O₂ ambient to improve their properties. The intensity of the photoluminescence (PL) signal detected at room temperature from the films depends on the temperature of the thermal process. The structural characterization of the films, performed by transmission electron microscopy, energy filtered transmission electron microscopy and x-ray diffraction, reveals that annealing processes performed at temperatures higher than 900 °C induce a mixing at the Eu₂O₃–Si interface, leading to the formation of a silicate-like layer, which is responsible for the observed decrease of the PL intensity.     

CaO–MgO–SiO2 glass ceramics: Transferred arc plasma (TAP) synthesis and microstructural characterization

In this paper, synthesis of CaO–MgO–SiO₂ glass ceramic using transferred arc plasma (TAP) processing method is illustrated. Homogeneous mixture of 51.6% SiO₂, 35.6% CaO and 12.8% MgO prepared by dry mixing in a ball mill was kept in the anode well (which is the melting bed) of the 10 kW transferred arc plasma torch. It was melted in plasma at an operating power of 5 kW (by varying the processing time for 3, 5 and 8 min). The melt was cooled to solidify by applying forced air on it. The resulting samples were characterized for microstructure and phase composition. The phases were identified by scanning electron microscopy (SEM), using the back-scattered electron (BSE) image mode and X-ray diffraction (XRD) and energy dispersive X-ray analysis (EDX). The microstructure was examined using optical microscopy (OM) and scanning electron microscopy. The micro-hardness, density and porosity measurements for the synthesized samples were carried out. Differential thermal analysis (DTA) was performed to study the thermal evolution. The results show the formation of diopside phase in the transferred arc plasma melted CaO–MgO–SiO₂ glass ceramic system achieved with in a quite considerable short time of plasma processing. The method indicated that TAP technique could be a promising, time saving and one-step manufacturing process for the production of functional bulk glass ceramics.     

The study of structure and optoelectronic properties of ZnS and ZnO films on porous silicon substrates

ZnS and ZnO films were prepared on porous silicon (PS) substrates with the same porosity by pulsed laser deposition (PLD), and the structural, optical and electrical properties of ZnS and ZnO films on PS were investigated at room temperature by X-ray diffraction (XRD), scanning electron microscope (SEM), optical absorption measurement, photoluminescence (PL) and I–V characteristic studies. The prepared ZnS was obtained in the cubic phase along β-ZnS (1 1 1) orientation which showed a perfect match with the earlier report while ZnO films were obtained in c-axis orientation. There appeared some cracks in the surface of ZnS and ZnO films due to the roughness of PS substrates. Luminescence studies of ZnS/PS and ZnO/PS composites indicated room temperature emission in a broad, intense, visible photoluminescence band, which cover the blue emission to red emission, exhibiting intensively white light emission. Based on the I–V characteristic, ZnS/PS heterojunction exhibited the rectifying junction behavior, while the I–V characteristic of ZnO/PS heterostructure was different from that of the common diode, whose reverse current was not saturated.     

ZnS thin films grown by atomic layer deposition on GaAs and HgCdTe substrates at very low temperature

ZnS films grown on GaAs and HgCdTe substrates by atomic layer deposition (ALD) under very low temperature were investigated in this work. ZnS films were grown under several temperatures lower than 140 °C. The properties of the films were investigated with high-resolution X-ray diffraction (HRXRD), scanning electron microscope (SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The results showed the ZnS films were polycrystalline. The growth rate monotonically decreased with temperature, as well as the root mean square (r.m.s) roughness measured by AFM. XPS measurement revealed the films were stoichiometric in Zn and S.     

Fabrication of Cu2O nanocrystalline thin films photosensor prepared by RF sputtering technique

Cuprous oxide (Cu₂O) nanocrystalline thin films were prepared on two types of substrates known as crystalline silicon and amorphous glass, by radio frequency reactive magnetron sputtering method. Scanning electron microscopy images confirmed that Cu₂O particles covered the entire surface of both substrates with smoothing distribution. The root mean square surface roughness for the prepared Cu₂O thin films on glass and Si (111) substrates is 4.16, and 3.36 nm, respectively. Meanwhile, X-ray diffraction results demonstrated that the two phases of Cu₂O and CuO were produced on Si (111) and glass substrates. The optical bandgap of Cu₂O thin films synthesised on glass substrate is 2.42 eV. Furthermore, the prepared Cu₂O nanocrystalline thin films have showed low reflectance value in the visible spectrum. Metal-Semiconductor-Metal photodetector based Cu₂O nanocrystalline thin films deposited onto Si (111) was fabricated using aluminium and platinum, with the current-voltage and photoresponse characteristic investigated under various applied bias voltages. The fabricated Metal-Semiconductor-Metal (M-S-M) photodetector had shown 126% sensitivity in the presence of 10 mW/cm² of 490 nm light with 1.0 V bias, displaying 90 and 100 ms response and recovery times, respectively. These findings have demonstrated the suitability of M-S-M Cu₂O photodetector as an affordable photosensor in the future.     

Chemical spray pyrolysis of β-In2S3 thin films deposited at different temperatures

In₂S₃ thin films were deposited onto indium tin oxide-coated glass substrates by chemical spray pyrolysis while keeping the substrates at different temperatures. The structures of the sprayed In₂S₃ thin films were characterized by X-ray diffraction (XFD). The quality of the thin films was determined by Raman spectroscopy. Scanning electron microscopy (SEM) and atomic force microscopy were used to explore the surface morphology and topography of the thin films, respectively. The optical band gap was determined based on optical transmission measurements. The indium sulfide phase exhibited a preferential orientation in the (0, 0, 12) crystallographic direction according to the XRD analysis. The phonon vibration modes determined by Raman spectroscopy also confirmed the presence of the In₂S₃ phase in our samples. According to SEM, the surface morphologies of the films were free of defects. The optical band gap energy varied from 2.82 eV to 2.95 eV.     

The effect of copper concentration on structural,optical and dielectric properties of CuxZn1 − xS thin films

Cu_xZn_1 ? xS (x = 0, 0.25, 0.50, 0.75, 1) thin films were deposited on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature and ambient pressure. The copper concentration (x) effect on the structural, morphological and optical properties of Cu_xZn_1 ? xS thin films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibit polycrystalline nature and are covered well with glass substrates. The crystalline and surface properties of the films improved with increasing copper concentration. The energy bandgap values were changed from 2.07 to 3.67 eV depending on the copper concentration. The refractive index (n), optical static and high frequency dielectric constants (ε_o, ε_∞) values were calculated by using the energy bandgap values as a function of the copper concentration.     

Two and four photon absorption and nonlinear refraction in undoped,chromium doped and copper doped ZnS quantum dots

The ZnS quantum dots (QDs) with Cr and Cu doping were synthesized by chemical co-precipitation method. The nanostructures of the prepared undoped and doped ZnS QDs were characterized by UV–vis spectroscopy, Transmission electron microscopy (TEM) and X-ray diffraction (XRD). The sizes of QDs were found to be within 3–5 nm range. The nonlinear parameters viz. Two photon absorption coefficient (β₂), nonlinear refractive index (n₂), third order nonlinear susceptibility (χ³) at wavelength 532 nm and Four photon absorption coefficient (β₄) at wavelength 1064 nm have been calculated by Z-scan technique using nanosecond Nd:YAG laser in undoped, Cr doped and Cu doped ZnS QDs. Higher values of nonlinear parameters for doped ZnS infer that they are potential material for the development of photonics devices and sensor protection applications.     

Preparation and characterization of low density polystyrene/TiO2 core–shell particles for electronic paper application

In order to reduce the density mismatch between TiO₂ and the low dielectric medium and improve the dispersion stability of the electrophoretic particles in the low dielectric medium for electrophoretic display application, polystyrene/titanium dioxide (PS/TiO₂) core–shell particles were prepared via in-situ sol–gel method by depositing TiO₂ on the PS particle which was positively charged with 2-(methacryloyloxy)ehyl trimethylammonium chloride (DMC). The morphology and average particle size of PS/TiO₂ core–shell particles were observed by transmission electron microscopy (TEM), scanning electron microscope (SEM) and particle size analyzer. It was found that density of PS/TiO₂ core–shell particles were reduced obviously and the particles can suspend in the low dielectric medium of low density. The PS/TiO₂ core–shell particles can endure ultrasonic treatment because of the interaction between TiO₂ and PS. Zeta potential and electrophoretic mobility of the fabricated core–shell particles in a low dielectric medium with charge control agent was measured to be −44.3 mV and −6.07 × 10⁻⁶ cm²/Vs, respectively, which presents potential in electronic paper application.     

Characterization on electron beam evaporated α-MoO3 thin films by the influence of substrate temperature

Electrochromic molybdenum oxide (MoO₃) thin films were prepared by electron beam evaporation technique using the dry MoO₃ pellets. The films were deposited on glass and fluorine doped tin oxide (SnO₂:F or FTO) coated glass substrates at different substrate temperatures like room temperature (RT, 30 °C), 100 °C and 200 °C. The influence of substrate temperature on the structural, surface morphological and optical properties of the films has been studied. The X-ray diffraction analysis showed that the films are having orthorhombic phase MoO₃ (α-MoO₃) with 〈1 1 0〉 preferred orientation. The laser Raman scattering spectrum shows the polycrystalline nature of MoO₃ films deposited at 200 °C. The Raman-active band at 993 cm⁻¹ is corresponding to Mo–O stretching mode that is associated with the unique character of the layered structure of orthorhombic MoO₃. Needle—like morphology was observed from the SEM analysis. The energy band gap of MoO₃ films was evaluated which lies between 2.8 and 2.3 eV depending on the substrate temperature and substrates. The decrease in band gap value with increasing substrate temperature is owing to the oxygen-ion vacancies. The absorption edge shift shows the coloration effect on the films.     

Strain analysis of misfit dislocations in α-Fe2O3/α-Al2O3 heterostructure interface by geometric phase analysis

The α-Fe₂O₃/α-Al₂O₃ heterostructure interfaces have been studied using transmission electron microscopy (TEM). The interface exhibited coherent regions separated by equally spaced misfit dislocations. The misfit dislocations were demonstrated to be edge dislocations with dislocation spacing of ∼4 nm. The strain fields around the misfit dislocation core were mapped using a combination of geometric phase analysis and high-resolution transmission electron microscopy images. The strain measurement results were compared with the Peierls–Nabarro dislocation model and the Foreman dislocation model. These comparisons show that the Foreman model (a = 2) is the most appropriate theoretical model to describe the strain fields of the dislocation core.     

Effect of impurity concentration on optical and magnetic properties in ZnS:Cu nanoparticles

To obtain enhanced room temperature ferromagnetism (RTFM) along with the increase in optical bandgap in the compound semiconductors has been an interesting topic. Here, we report RTFM along with increase in energy bandgap in chemically synthesized Zn_1−xCu_xS (0 ≤ x ≤ 0.04) DMS nanoparticles. Structural properties of the synthesized samples studied by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) show the formation of cubic phase Cu doped ZnS nanoparticles of ~3–5 nm size. An intrinsic weak ferromagnetic behavior was observed in pure ZnS sample (at 300 K) which got increased in Cu doped samples and was understood due to defect induced ferromagnetism. UV–vis measurement showed increase in the energy bandgap with the increase in Cu doping. The PL study suggested the presence of sulfur and zinc vacancies and surface defects which were understood contributing to the intrinsic FM behavior.