Hydrophilic polyaniline nanofibrous architecture using electrosynthesis method for supercapacitor application

An electrosynthesis process of hydrophilic polyaniline nanofiber electrode for electrochemical supercapacitor is described. The TGA–DTA study showed polyaniline thermally stable up to 323 K. Polyaniline nanofibers exhibit amorphous nature as confirmed from XRD study. Smooth interconnected fibers having diameter between 120–125 nm and length typically ranges between 400–500 nm observed from SEM and TEM analysis. Contact angle measurement indicated hydrophilic nature of polyaniline fibers. Optical study revealed the presence of direct band gap with energy 2.52 eV. The Hall effect measurement showed room temperature resistivity ∼3 × 10⁻⁴ Ω cm and Hall mobility 549.35 cm⁻²V⁻¹ s⁻¹_. The supercapacitive performance of nanofibrous polyaniline film tested in 1 M H₂SO₄ electrolyte and showed highest specific capacitance of 861 F g⁻¹ at the voltage scan rate of 10 mV/s.     

Stimulated emission from optically excited CdxHg1−xTe structures at room temperature

Main requirements for the optimization of Cd_xHg_1?xTe (MCT) structures with a view to increasing the wavelength of stimulated emission under optical pumping are discussed. A 2–2.5 μm stimulated emission from optimized MCT structures is observed experimentally at room temperature. The measured values of the gain in the active medium amount to 50 cm^?1 at a 2 μm emission wavelength.     

Oxygen diffusion and surface exchange studies on (La0.75Sr0.25)0.95Cr0.5Mn0.5O3−δ

Oxygen tracer diffusion coefficient (D^⁎) and surface exchange coefficient (k^⁎) have been measured for (La_0.75Sr_0.25)_0.95Cr_0.5Mn_0.5O_3−δ using isotopic exchange and depth profiling by secondary ion mass spectrometry technique as a function of temperature (700–1000 °C) in dry oxygen and in a water vapour-forming gas mixture. The typical values of D^⁎ under oxidising and reducing conditions at ∼ 1000 °C are 4 × 10^− 10 cm² s^− 1 and 3 × 10^− 8 cm² s^− 1 respectively, whereas the values of k^⁎ under oxidising and reducing conditions at ∼ 1000 °C are 5 × 10^− 8 cm s^− 1 and 4 × 10^− 8 cm s^− 1 respectively. The apparent activation energies for D^⁎ in oxidising and reducing conditions are 0.8 eV and 1.9 eV respectively.     

Magnetocaloric heat-pump cycles based on the AF–F transition in Fe–Rh alloys

The proposal involves a heat-pumping scheme based upon the first-order antiferromagnetism–ferromagnetism transition in FeRh alloy. Using the model S–T diagram for this alloy, the heat-pump cycles, are drawn up based on the transition latent heat absorption and emission when the transition is induced by applying magnetic field. The calculated values of heat coefficient ϕ for the cycles are ∼39 at ΔT=5 K and ∼30 at ΔT=10 K, where ΔT is the difference between the temperature surrounding and that of the heat receiver. These values are achieved using the comparatively low magnetic fields of ∼2×10⁶ A m⁻¹. The high values of ϕ, together with high value of cooling capacity, make it possible to consider Fe–Rh alloys as an effective magnetic heat-pump working body near the room temperature.     

Spectroscopic properties of Co2+: ZnAl2O4 nanocrystals in sol–gel derived glass–ceramics

Transparent glass–ceramics containing zinc–aluminum spinel (ZnAl₂O₄) nanocrystals doped with tetrahedrally coordinated Co²⁺ ions were obtained by the sol–gel method for the first time. The gels of composition SiO₂–Al₂O₃–ZnO–CoO were prepared at room temperature and heat-treated at temperature ranging 800–950 °C. When the gel samples were heated up to 900 °C, ZnAl₂O₄ nanocrystals were precipitated. Co²⁺ ions were located in tetrahedral sites in ZnAl₂O₄ nanocrystals. X-ray diffraction analysis shows that the crystallite sizes of ZnAl₂O₄ crystal become large with the heat-treatment temperature and time, and the crystallite diameter is in the range of 10–15 nm. The dependence of the absorption and emission spectra of the samples on heat-treatment temperature were presented. The difference in the luminescence between Co²⁺ doped glass–ceramic and Co²⁺ doped bulk crystal was analysed. The crystal field parameter D_q of 423 cm⁻¹ and the Racah parameters B of 773 cm⁻¹ and C of 3478.5 cm⁻¹ were calculated for tetrahedral Co²⁺ ions.     

Synthesis,characterization and magnetic properties of lightly doped La2−xSrxCuO4 (x = 0.04) nanoparticles

Lightly doped La_2−xSr_xCuO₄ (x = 0.04) nanoparticles with different particle sizes have been successfully prepared by a sol–gel method and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), infrared transmission (IR) spectra and superconducting quantum interference device (SQUID) magnetometer. All samples are single phase and have an orthorhombic unit cell. As the particle size reduces, it is found that the IR band at around 685 cm⁻¹ corresponding to the in-plane Cu–O asymmetrical stretching mode shifts to higher frequency and the magnetization exhibits a large enhancement at low temperature. The magnetic susceptibility of all samples follows a modulated Curie law between ∼20 K and ∼100 K and the Curie constant displays a strong dependence on the particle size. It is suggested that as the particle size decreases surface effects should play an important role in the magnetic properties of the nanoparticles.     

Electrical transport and crystallization in Cu+ ion substituted AgI–Ag2O–V2O5 glassy superionic system

A new glassy solid electrolyte system Cu_xAg_1 − xI–Ag₂O–V₂O₅ has been synthesized. The structural, thermal and electrical properties of the samples have been investigated. The glassy nature of the samples is confirmed by X-Ray diffraction and Differential Scanning Calorimetry studies. The electrical conductivity of these samples increases with CuI content and approaches a maximum value of ∼ 10⁻² Ω^− 1 cm^− 1 for x = 0.35 at room temperature. Ionic mobility measurements suggest that enhancement in the conductivity with Cu⁺ ion substitution may be attributed to increase in the mobility of Ag⁺ ions. The electrical conductivity versus temperature cycles carried out at well-controlled heating rate above T_g and T_c reveal interesting thermal properties. For lower CuI content samples conductivity exhibits anomalous rise above T_g and subsequent fall at T_c. It is also found that CuI addition into AgI–Ag₂O–V₂O₅ matrix reduces the extent of crystallization.     

Modeling of electrical and optical characteristics of near room-temperature CdS/ZnSe based NIR photodetectors

Results of modeled photodetector characteristics in (CdS/ZnSe)/BeTe multi-well diode with p–i–n polarity are reported. The dark current density (J–V) characteristics, the temperature dependence of zero-bias resistance area product (R₀A), the dynamic resistance as well as bias dependent dynamic resistance (R_d) and have been analyzed to investigate the mechanisms limiting the electrical performance of the modeled photodetectors. The quantum efficiency, the responsivity and the detectivity have been also studied as function of the operating wavelength. The suitability of the modeled photodetector is demonstrated by its feasibility of achieving good device performance near room temperature operating at 1.55 μm wavelength required for photodetection in optical communication. Quantum efficiency of ∼95%, responsivity ∼0.6 A/W and D^* ∼ 5.7 × 10¹⁰ cm Hz^1/2/W have been achieved at 300 K in X BeTe conduction band minimum.     

Growth and characterization of Nd:Bi12SiO20 single crystal

A Nd:Bi₁₂SiO₂₀ crystal was grown by the Czochralski method. The thermal properties of the crystal were systematically studied. The thermal expansion coefficient was measured to be α=11.42×10^?6 K^?1 over the temperature range of 295–775 K, and the specific heat and thermal diffusion coefficient were measured to be 0.243 Jg^?1 k^?1 and 0.584 mm²/s, respectively at 302 K. The density was measured to be 9.361 g/cm³ by the buoyancy method. The thermal conductivity of Nd:Bi₁₂SiO₂₀ was calculated to be 1.328 Wm^?1 K^?1 at room temperature (302 K). The refractive index of Nd:Bi₁₂SiO₂₀ was measured at room temperature at eight different wavelengths. The absorption and emission spectra were also measured at room temperature. Continuous-wave (CW) laser output of a Nd:Bi₁₂SiO₂₀ crystal pumped by a laser diode (LD) at 1071.5 nm was achieved with an output power of 65 mW. To our knowledge, this is the first time LD pumped laser output in this crystal has been obtained. These results show that Nd:Bi₁₂SiO₂₀ can serve as a laser crystal.     

Up-conversion luminescence and optical temperature-sensing properties of Er3+-doped perovskite Na0.5Bi0.5TiO3 nanocrystals

In this work we demonstrate the preparation of Er³⁺ doped perovskite ferroelectric Na_0.5Bi_0.5TiO₃ nanocrystals and their application in temperature sensing. The samples were synthesized via a facile hydrothermal method. Upconversion emission at 528 nm and 547 nm from two thermodynamically coupled excited states of Er³⁺ were recorded in the temperature from 80 K to 480 K under the excitation of a 980 nm diode laser. The emission intensity ratio (I₅₂₈/I₅₄₇) as a function of the temperature was investigated. A sensitivity of 0.0053 K⁻¹ is observed at 400 K, suggesting they are promising candidate for nanothermometers.     

Bulk and surface properties of ionic salt CsH5(PO4)2

We report a comparative study of transport and thermodynamic properties of single-crystal and polycrystalline samples of the ionic salt CsH₅(PO₄)₂ possessing a peculiar three-dimensional hydrogen-bond network. The observed potential of electrolyte decomposition ≈ 1.3 V indicates that the main charge carriers in this salt are protons. However, in spite of the high proton concentration, the conductivity appears to be rather low with a high apparent activation energy E_a ≈ 2 eV, implying that protons are strongly bound. The transport anisotropy though is not large, correlates with the crystal structure: the highest conductivity is found in the [001] direction (σ_130 °C ∼ 5.6 × 10^− 6 S cm^− 1) while the minimal conductivity is in the [100] direction (σ_130 °C ∼ 10 ⁻⁶ S cm^− 1). The conductivity of polycrystalline samples appears to exceed the bulk one by 1–3 orders of magnitude with a concomitant decrease of the activation energy (E_a ≈ 1.05 eV), which indicates that a pseudo-liquid layer with a high proton mobility is formed at the surface of grains. Infrared and Raman spectroscopy used to study the dynamics of the hydrogen-bond system in single-crystal and polycrystalline samples have confirmed the formation of such a modified surface layer in the latter. However, no bulk phase transition into the superionic disordered phase is observed in CsH₅(PO₄)₂ up to the melting point T_melt ∼ 151.6 °C, in contrast to its closest relative compound CsH₂PO₄.     

Effects of compositions on properties of PEO–KI–I2 salts polymer electrolytes for DSSC

The effects of compositions on properties of PEO/KI/I₂ salts polymer electrolytes were investigated to optimize the photovoltaic performance of solid state DSSCs. XRD pattern for the mole ratio 12:1 of [EO:KI] was showed the formation of complete amorphous complex. DSC results also confirmed the amorphous nature of the polymer electrolyte. The highest value of ionic conductivity is 8.36 × 10^− 5 S/cm at 303 K (ambient temperature) and 2.32 × 10^− 4 S/cm at 333 K (moderate temperature) for the mole ratio 12:1 of EO:KI complex. The effect of contribution of [I⁻] and [I₃⁻] concentration with conductivity were also evaluated. FTIR spectrum reveals that the alkali metal cations were co-ordinated to ether oxygen of PEO. The formation of polyiodide ions, such as symmetric I₃⁻ (114 cm^− 1) and I₅⁻ (145 cm^− 1) caused by the addition of iodine was confirmed by FT Raman spectroscopic measurements. The optimum composition of PEO–KI–I₂ polymer electrolyte system for higher conductivity at ambient and moderate temperatures was reported. A linear Arrhenius type behaviour was observed for all the PEO–KI polymer complexes. Transport number measurements were carried out for several polymer electrolyte compositions. Dye-sensitized solar cells were fabricated by using higher conductivity polymer electrolyte compositions and its photoelectrochemical performance was investigated. The fill factor, short-circuit current, photovoltage and energy conversion efficiency of the DSSC assembled with optimized electrolyte composition were calculated to be 0.563, 6.124 mA/cm², 593 mV and 2.044% respectively.     

A miniaturized prototype of resonant banana-shaped photoacoustic cell for gas sensing

A resonant photoacoustic cell intended for laser-spectroscopy gas sensing is represented. This cell is a miniature imitation of a macro-scale banana-shaped cell developed previously. The parameters, which specify the cavity shape, are chosen so as not only to provide optimal cell operation at a selected acoustic resonance but also to reduce substantially the cell sizes. A miniaturized prototype cell (the volume of acoustic cavity of ∼5 mm³) adapted to the narrow diffraction-limited beam of near-infrared laser is produced and examined experimentally. The noise-associated measurement error and laser-initiated signals are studied as functions of modulation frequency. The background signal and the useful response to light absorption by the gas are analyzed in measurements of absorption for ammonia in nitrogen flow with the help of a pigtailed DFB laser diode oscillated near a wavelength of 1.53 μm. The performance of prototype operation at the second longitudinal acoustic resonance (the resonance frequency of ∼32.9 kHz, Q-factor of ∼16.3) is estimated. The noise-limited minimal detectable absorption normalized to laser-beam power and detection bandwidth is ∼8.07 × 10⁻⁸ cm⁻¹ W Hz^−1/2. The amplitude of the background signal is equivalent to an absorption coefficient of ∼2.51 × 10⁻⁵ cm⁻¹. Advantages and drawbacks of the cell prototype are discussed. Despite low absorption-sensing performance, the produced miniaturized cell prototype shows a good capability of gas-leak detection.     

Band engineered HOT midwave infrared detectors based on type-II InAs/GaSb strained layer superlattices

We report on heterostructure bandgap engineered midwave infrared photodetectors based on type-II InAs/GaSb strained layer superlattices with high operating temperatures. Bandgap and bandoffset tunability of antimonide based systems have been used to realize photodiodes and photoconductors. A unipolar barrier photodiode, pBiBn, and an interband cascade photovoltaic detector have been demonstrated with a 100% cutoff wavelength of 5 μm at 77 K. The pBiBn detector demonstrated operation up to room temperature and the cascade detector up to 420 K. A dark current density of 1.6 × 10⁻⁷ A/cm² and 3.6 × 10⁻⁷ A/cm⁻² was measured for the pBiBn and interband cascade detector, respectively, at 80 K. A responsivity of 1.3 A/W and 0.17 A/W was observed at −30 mV and −5 mV of applied bias for pBiBn and cascade detector, respectively, at 77 K. The experimental results have been explained by correlating them with the operation of the devices.     

Effects of Zr impurity on microscopic behavior of Hf metal

Hf metal with ∼ 3 wt% Zr impurity has been reinvestigated by perturbed angular correlation (PAC) spectroscopy using a LaBr₃(Ce)–BaF₂ detector set up to understand the microscopic behavior of this metal with temperature. From present measurements, five quadrupole interaction frequencies have been found at room temperature where both pure hcp fraction (∼33%) with 12 nearest neighbor Hf surrounding the probe ¹⁸¹Hf atom and the probe–impurity fraction (∼33%) corresponding to 11 nearest neighbor Hf plus one dissimilar Zr atom are clearly distinguished. At room temperature, the results for quadrupole frequency and asymmetry parameter are found to be ω_Q=51.6(4) Mrad/s, η=0.20(4) for the impurity fraction and ω_Q=46.8(2) Mrad/s, η=0 for the pure fraction with values of frequency distribution width δ=0 for both components. At 77 K, only 1 NN Zr impurity (∼93%) and pure hcp (∼7%) components have been found with a value of δ ∼ 10% for the impurity fraction. A drastic change in microstructural configuration of Hf metal is observed at 473 K where the impurity fraction increases to ∼ 50% and the pure hcp fraction reduces to ∼ 15% with abrupt changes in quadrupole frequencies for both components. The pure fraction then increases with temperature and enhances to ∼50% at 973 K. In the temperature range 473–973 K, quadrupole frequencies for both components are found to decrease slowly with temperature. Using the Arrhenius relation, binding energy (B) for the probe–impurity pair and the entropy of formation are measured from temperature dependent fractions of probe–impurity and pure hcp in the temperature range 473–773 K. The three other minor components found at different temperatures are attributed to crystalline defects.     

M/Li+(M = Mg2+, Zn2+, and Mn2+) ion-exchange on lithium ion-conducting perovskite-type oxides and their properties

Lithium ions of perovskite-type lithium ion conductor La_0.55Li_0.35TiO₃ were replaced by divalent Mg²⁺, Zn²⁺, and Mn²⁺ ions in an ion-exchange reaction using molten chlorides. The polycrystalline Mg-exchanged and Zn-exchanged samples are solid electrolytes for divalent Mg²⁺ and Zn²⁺ ions, whose dc ionic conductivities (σ = 2.0 × 10^− 6 S cm^− 1 at 558 K for the Mg-exchanged sample, La_0.56(2)Li_0.02(1)Mg_0.16(1)TiO_3.01(2) and σ = 1.7 × 10^− 6 S cm^− 1 at 708 K for the Zn-exchanged samples, La_0.55(1)Li_0.0037(2)Zn_0.15(1)TiO_2.98(2)) were compared to those of the known highest Mg²⁺ and Zn²⁺ inorganic solid electrolytes. The Mn-exchanged sample, then, showed paramagnetic behavior in the temperature range of 2 to 300 K. The Mn ions in the exchanged sample are divalent and the spin configuration is in high spin state (S = 5/2).     

Effect of temperature on the current–voltage characteristics of GaAs/AlGaAs quantum cascade photodetectors

Transport of electrons within a quantum cascade photodetector structure takes place with the help of the scattering of electrons by phonons. By calculating scattering rates of the electrons mediated by longitudinal optical phonons (the dominant scattering mechanism), current–voltage characteristic of a quantum cascade photodetector is calculated. The results indicate that with the increase of bias voltage dark current increases rapidly, then the increase becomes slow at higher voltages, whilst photocurrent remains approximately constant with only slight variations in its magnitude. With the increase of temperature from 80 K to 160 K dark current increases by about two orders of magnitude while photocurrent varies slightly, so that at the illuminating power of 1 mW/m² photocurrent density increases in mean from 1.10×10⁻⁹ A/cm² at 80 K to 1.14×10⁻⁹ A/cm² at 160 K and then decreases to 1.03×10⁻⁹ A/cm² at 240 K. Thus the responsivity of the detector varies only slightly with temperature. However owing to the decrease in the resistivity of the photodetector with the increase of temperature, Johnson noise limited detectivity decreases considerably.     

Field induced modification of SmC1–SmCA1 transition temperature of a fluorinated antiferroelectric liquid crystal

The temperature and frequency dependent dielectric relaxation data and simultaneous observation of optical texture reveal co-existence of ferroelectric (SmC¹) and antiferroelectric (SmC_A¹) phases in the pre-transition regime of the antiferroelectric liquid crystal (AFLC) sample viz. (R)-4-[1-methyl-2-(2,2,3,3,3-pentafluoropropyloxy)ethyloxy)carbonyl]phenyl 4′-decyloxybiphenyl-4-caboxylate. Interestingly, this sample shows irreversible change in the antiferroelectric to ferroelectric (AFE → FE) phase transition temperature (T₀) for consecutively increasing bias field treatment in successive cycles. The lowest upper bound of the threshold field for AFE → FE transition at the boundary of the said phases is found to be ∼1 kV cm⁻¹.     

Energy storage properties of antiferroelectric 0.92NaNbO3-0.08SrZrO3 film on (001)SrTiO3 substrate

The present study demonstrates the fabrication of an antiferroelectric 0.92NaNbO₃-0.08SrZrO₃ film deposited on a SrRuO₃ coated (001)SrTiO₃ single crystal substrate by pulsed laser deposition. In the 0.92NaNbO₃-0.08SrZrO₃ film, the domain with its c-axis aligned with the out-of-plane direction contributed to the stabilization of an antiferroelectric phase under the high electric field. The film had an energy storage density of 2.9 J cm⁻³ and storage efficiency of 67% at room temperature, which kept at 2.5 J cm⁻³ and 50% at high temperature of 150 °C.     

InGaAsP/InP photodetectors targeting on 1.06 μm wavelength detection

InP-based InGaAsP photodetectors targeting on 1.06 μm wavelength detection have been grown by gas source molecular beam epitaxy and demonstrated. For the detector with 200 μm mesa diameter, the dark current at 10 mV reverse bias and R₀A are 8.89 pA (2.2 × 10⁻⁸ A/cm²) and 3.9 × 10⁵ Ω cm² at room temperature. The responsivity and detectivity of the InGaAsP detector are 0.30 A/W and 1.45 × 10¹² cm Hz^1/2 W⁻¹ at 1.06 μm wavelength. Comparing to the reference In_0.53Ga_0.47As detector, the dark current of this InGaAsP detector is about 570 times lower and the detectivity is more than ten times higher, which agrees well with the theoretical estimation.