光照和偏压对微晶硅薄膜室温电导的影响

报道了SiCl₄/H₂等离子体化学气相沉积方法制备的未掺杂微晶硅薄 膜，在短时间光照或加上直流偏压后其室温暗电导随时间缓慢变化的行为. Raman散射谱结 果表明，薄膜的晶态体积比大于70%. 暗电阻的实验结果显示: 材料具有弱的持久光电导效 应；薄膜的暗电导在外加直流电场的作用下缓慢上升，电场反向后出现暗电导的恢复过程， 而且暗电导变化速度与偏压大小和温度有关. 根据异质结势垒模型，指出外加条件下载流子 的空间分离和重新分布以及材料非均匀性造成的势垒是引起电导 关键词： 微晶硅 电导率 薄膜     

Raman scattering and photoluminescence of zinc telluride nanopowders at room temperature

Zinc telluride (ZnTe) powders were synthesized in sodium hydroxide solution by the hydrothermal method under different conditions, in which zinc and tellurium powders were used as precursors. Their structures were characterized by X-ray diffractometer, X-ray photoelectron spectroscopy, transmission electron microscopy, and micro-Raman spectrometer. The results indicate that the powders are composed of ZnTe nanocrystals with zincblende structure and contain some impurities, and the average sizes of ZnTe nanocrystals are about 67, 92, and 112 nm when they were grown at 120 °C for 1, 2, and 6 h, respectively. The Raman spectra show three peaks centered at about 205, 410, and 616 cm⁻¹, which are attributed to the longitudinal optical phonon vibration modes of ZnTe. The photoluminescence (PL) of ZnTe nanopowders were also investigated at room temperature and the PL spectra show three emission peaks at about 555, 578, and 701 nm, which are related to the complex defects and isolelectronic oxygen trap.     

Dose-dependent optically stimulated luminescence of synthetic quartz at room temperature

Physical conditions such as annealing temperature, duration of annealing, ionizing radiation, etc., play a significant role in the applications of optically stimulated luminescence (OSL) dating as well as OSL dosimetry. Many efforts are made to understand the effect of these physical parameters on quartz specimens owing to its use in such applications. Such factors induce changes in OSL decay pattern. The definite correlation between color centers and luminescence sensitivity can be established on account of such pre-treatments to the specimen.The purpose of present investigations is to study the effect of ionizing radiation under identical physical conditions on OSL properties measured at room temperature. The shapes of decay curve and dose-response data are considered for this purpose. This study can reveal the changes in color centers in response to the pre-conditions to the specimen. It was found that the OSL decay remains slow and OSL properties change systematically with the rise in beta dose up to a critical dose; however, it changes the pattern when the beta exposure to the specimen was increased higher than the critical dose. This critical dose was found to be different for different temperature of annealing. The shape of decay curve up to the critical dose was also studied by considering the difference of OSL intensities between two successive durations from the observed OSL decay data. The results are explained based on the changes in available shallow traps during OSL measurement at room temperature with changes in pre-conditions to the specimens. The results also have been confirmed with the corresponding changes in ESR signals.     

Efficient Continuous Wave-laser emission of Pr3+-doped fluorides at room temperature

We report, to our knowledge for the first time, Continuous Wave (CW) laser emission at room temperature of Pr:LiYF₄ (Pr.YLF) at six wavelengths: 522, 545, 607, 639.5, 720 and 907.4 nm. The pump source was an argon-ion laser tuned to a wavelength of = 457.9 nm. The maximum output powers at 522 nm (³P_i ³H₅) and 639.5 nm (³P₀ ³F₂) were 144 and 266 mW, respectively. We also observed CW laser action of Pr:GdLiF₄ (Pr: GLF) at = 639 nm and of Pr:KYF₄ (Pr: KYF) at = 642.5 nm.     

Influence of CH3COO on the room temperature photoluminescence of ZnO films prepared by CVD

ZnO films with strong c-axis-preferred orientation have been prepared by a single source chemical vapor deposition technique using zinc acetate as source material at the growth temperature of 230 °C. The strong UV and blue emissions were observed in the photoluminescence spectra of as-grown films. A small quantity of residual zinc acetate was reserved on the surface of as-grown ZnO films and the emission mechanism of blue luminescence was nearly related to the CH₃COO^- of unidentate type. The blue emission disappeared and the green emission appeared after annealing treatment. The green emission is related to the singly ionized oxygen vacancies.     

Study of Fe-Al thin films oxidized at room temperature

Very thin films of Fe andFe/Al were oxidized at room temperature in dry air andthen studied by means of surface Mössbauer measurements andX-ray photoelectron spectroscopy. A mechanism is proposed for the oxidation process.     

High efficient diode-pumped Tm:YAP laser at room temperature

A high efficient diode-pumped Tm:YAP laser is reported. The maximum output power at 1981 nm is 5.2 W and the slope efficiency is 30%. Unpolarized absorption near 800 nm and unpolarized fluorescence spectra near 1800 nm pumped by laser diode (LD) are measured. In addition, the relationship between operation temperature and output power is discussed.     

近场光学显微镜研究SdS0.65Se0.35纳米带空间分辨光致荧光谱

通过热蒸发方法成功制备出SdS0.65Se0.35纳米带,得到的纳米带表面光滑,宽度厚度均一,表现出很高的结晶质量.使用近场光学显微镜对纳米带室温下的带边荧光波导和光致荧光近场光谱进行研究.发现SdS0.65Se0.35纳米带呈现良好的光波导的特性;同时通过近场光学显微镜得到的空间分辨光谱,发现随着传播距离的增大,纳米带的光致荧光光谱有持续的红移现象.这种光谱红移现象是带间跃迁过程中带尾态的吸收效应引起的,并作了光谱带尾态吸收的理论模拟与实验结果进行比较.光波导传输过程中光谱的变化反映了信息在整个传导过程中的情况,体现了信息传递过程中的稳定性和有效性.三元合金材料SdS0.65Se0.35纳米带的波导和光谱性质研究,对于其他组分可调的三元合金纳米结构的制备和研究,及发展新型的纳米功能器件有重要意义.     

Evidence for the existence of stable-water-clusters at room temperature and normal pressure

We report the finding of isolated stable-water-clusters of tens of nanometers to micron size from the evaporation of very dilute sodium chloride solution at room temperature and normal atmospheric pressure. The stable-water-clusters are found to be electrically charged by examination via an Electric Force Microscope (EFM). Raman scattering and infrared spectrum of residues from the evaporation show similar but not identical characteristics of liquid water.     

The initial oxidation of aluminum thin films at room temperature

Thin film and ultra-high-vacuum techniques have been utilized in fabricating uncontaminated, atomically clean, aluminum surfaces in order to characterize the initial low temperature, low pressure oxidation kinetics of aluminum. The kinetics were followed gravimetrically by the quartz crystal microbalance technique and the aluminum-aluminum oxide surface was examined by utilizing electron microscopy and scanning electron microscopy techniques.     

室温下Pr0.7Ca0.3MnO3薄膜的瞬态光响应特性

在室温下利用波长532 nm,脉冲宽度7 ns的纳秒脉冲激光研究了不同电压和激光能量密度作用下Pr0.7Ca0.3MnO3薄膜的瞬态光响应特性.在激光能量密度为275.16 mJ/cm2时,其最大电阻变化率达到92.3%,响应时间约36 ns.室温下电压变化对薄膜的光响应特性影响不大,而诱导光能量密度的影响则很明显,能量密度越大,电阻变化越大,响应时间越短,并且电阻变化和响应时间均与激光能量密度呈非线性关系.这种光响应来源于薄膜中的光致非稳态绝缘体-金属相变,有望在新型光电器件上获得应用.     

Structural and photoluminescence characteristics of ZnO films by room temperature sputtering and rapid thermal annealing process

ZnO thin films deposited on SiO₂/Si substrates at room temperature by sputtering technology were annealed with a rapid thermal annealing process at various temperatures from 200 °C to 900 °C. The physical and optical properties of the ZnO films were investigated by X-ray diffraction, scanning electron microscopy and room-temperature photoluminescence (PL). The surface structures of the thin films showed great variations with increased annealing temperature. The PL spectrum illustrated that a stronger UV emission intensity appeared at an annealing temperature of 500 °C. On the other hand, visible-light emission could be obtained when the ZnO films were annealed above 500 °C and reached a maximum intensity at 900 °C. The possible mechanisms for visible-light emission are discussed. PACS 81.15.Cd; 81.40.Ef; 78.55.-m; 78.55.Et     

Observation of ferromagnetism at room temperature for Cr ions implanted ZnO thin films

Single crystalline ZnO films were grown on c-plane GaN/sapphire (0 0 0 1) substrates by molecular beam epitaxy. Cr⁺ ions were implanted into the ZnO films with three different doses, i.e., 1 × 10¹⁴, 5 × 10¹⁵, and 3 × 10¹⁶ cm⁻². The implantation energy was 150 keV. Thermal treatment was carried out at 800 °C for 30 s in a rapid thermal annealing oven in flowing nitrogen. X-ray diffraction (XRD), atomic force microscopy, Raman measurements, transmission electron microscopy and superconducting quantum interference device were used to characterize the ZnO films. The results showed that thermal annealing relaxed the stress in the Cr⁺ ions implanted samples and the implantation-induced damage was partly recovered by means of the proper annealing treatment. Transmission electron microscopy measurements indicated that the first five monolayers of ZnO rotated an angle off the [0 0 0 1]-axis of the GaN in the interfacial layer. The magnetic-field dependence of magnetization of annealed ZnO:Cr showed ferromagnetic behavior at room temperature.     

Plasma transformation of SiO films in SiO2 at room temperature

Oxygen plasma has been used to transform thin SiO deposited films into SiO₂ layers. Nuclear microanalysis, Rutherford backscattering and infrared spectroscopy have confirmed the formation of stoichiometric silicon dioxide by room temperature plasma anodization. Isotopic tracing experiments were carried out to study the ionic movements under high electric field [(1–2)X10⁷ V/cm] during oxide growth. This process differs strongly from the pure Si plasma anodization, and leads to the formation of a few tens nm thick SiO₂ films in sequential steps: low temperature deposition of SiO and low temperature plasma treatment.     

Optical absorption in polycrystalline thin films of magnetite at room temperature

Polycrystalline thin films of magnetite have been prepared to allow the measure of their absorption coefficient. Results are dealt with the hopping small polarons scheme. The case of free carriers is also considered.     

Room temperature photoluminescence property of Mo-doped In2O3 thin films

Mo-doped In₂O₃ thin films have been prepared on glass substrates using an activated reactive evaporation method and systematically studied the effect of oxygen partial pressure on the structural, optical, electrical and photoluminescence properties of the films. The obtained films are highly transparent and conductive. The films exhibited the lowest electrical resistivity of 5.2 × 10⁻⁴ Ω cm, with an average optical transmittance of 90% in the visible region. An intensive photoluminescence emission peaks were observed at 415 and 440 nm.     

The field emission of indium-doped ZnO films fabricated by room temperature DC magnetron sputtering

Indium doped ZnO film was fabricated at room temperature by co-sputtering a zinc target and an indium plate under the flow of oxygen and argon. The film was then characterized and the field emission of the film was studied. The indium composition x in the film (Zn_1−xIn_xO) is 5%. The film is hexagonal without any secondary phases or precipitates. The film has two major emission peaks, one related to the band edge emission and another possibly related to the electron acceptor transition. The possible acceptor is nitrogen occupying oxygen site in ZnO. The film is n-type and very resistive. The turn on field of the film at an emission current density of 10 μA/cm² is 17.5 V/μm. The relatively weak field emission property is due to the unintentional incorporation of acceptors such as substitutional nitrogen and oxygen vacancies, which increase the work function of ZnO by reducing the electron density and lowering the Fermi level position of the ZnO:In film.     

Photoassisted poling of azo dye doped polymeric films at room temperature

The reversible cis-trans photoisomerization of disperse red 1 (DR1) in PMMA thin films has been demonstrated to be strongly polarization sensitive [1]. In this communication two mechanisms are identified: the angular hole burning and the angular redistribution of molecules. It is shown that, in the presence of a DC electric field, the redistribution is not centrosymmetric and produces a poling of the film. The evolution of the second-order nonlinear susceptibility, ⁽²⁾, is monitored by measuring the electro-optic effect by attenuated total reflection and by second-harmonic generation.     

Disorder-dependent photoluminescence in Ba0.8Ca0.2TiO3 at room temperature

The photoluminescence (PL) emission in structurally disordered Ba_0.8Ca_0.2TiO₃ (BCT20) powders was observed at room temperature with laser excitation at lines 355 and 460 nm. The structural evolution perovskite-like titanate BCT20 powders prepared by a soft chemical processing at different annealing temperatures were accompanied by X-ray diffraction (XRD) and X-ray absorption near-edge structure (XANES). Intermediate oxycarbonate phase was identified and your influence with PL emission was discarding. BCT20 annealed at 500 °C displays intense PL emission. The results indicate relationship between broad PL band and order-disorder degree.     

利用强流脉冲离子束技术在室温下沉积类金刚石薄膜研究

利用强流脉冲离子束技术在Si基体上快速大面积沉积类金刚石(DLC)薄膜.电压为250kV,束流密度为250A·cm-2,脉宽为80—100ns,能流密度为5J·cm-2的离子束(主要由碳离子和氢离子组成)聚焦到石墨靶材上,使石墨靶材充分蒸发和电离,在石墨靶的法线方向的Si基体上沉积非晶的碳薄膜.Raman谱分析显示,所沉积薄膜为类金刚石薄膜.随着靶材与基体之间距离的减小,薄膜中sp3碳成分含量增加,同时硬度值也有所增大,并且薄膜的摩擦系数和表面粗糙度增加.x射线光电子能谱(XPS)分析显示薄膜中的sp3碳 关键词： 强流脉冲离子束 类金刚石薄膜 XPSRaman谱分析