Reduction of core loss in non-oriented (NO) electrical steel by electroless-plated magnetic coating

An important issue in development of electrical steels for core-laminated products is to reduce core loss to improve energy conversion efficiency. This is usually obtained by tailoring the composition, microstructure, and texture of electrical steels themselves. A new technique to reduce core loss in electrical steel has been investigated. This technique involves electroless plating of magnetic thin coating onto the surface of electrical steel. The material system was electroless Ni–Co–P coatings with different thicknesses (1, 5, and 10 μm) deposited onto the surface of commercially available Fe–3% Si electrical steel. Characterization of deposited Ni–Co–P coating was carried out using X-ray diffraction (XRD), scanning electron microscope (SEM), and energy dispersive X-ray (EDX) spectrometer. The deposited Ni–Co–P coatings were amorphous and composed of 56–59% Ni, 32–35% Co, and 8–10% P by mass. The effect of coatings on core loss of the electrical steel was determined using single sheet test. A core loss reduction of 4% maximum was achieved with the Ni–Co–P coating of 1 μm thickness at 400 Hz and 0.3 T.     

Production of nanostructured magnetic materials using holographic lithography

The magnetic properties of Co, Ni and NiFe sub-micrometric structures produced by holographic lithography and sputtering techniques are investigated. The structures were obtained using a mask previously recorded by holography in a photo-resist film coated on a quartz substrates. After this procedure, the magnetic material was deposited using the sputtering technique, and the photo resist was removed by lift-off. Samples with thicknesses of around 500 Å were grown in stripes structures and periodicity of 800 nm. The results indicate that the samples with Co and NiFe present exchange bias effect and this is due the surface oxidation.     

Transition of magnetic anisotropy in Ni/GaAs (0 0 1) observed by magnetization and ferromagnetic resonance

Polycrystalline thin Ni films deposited onto GaAs (0 0 1) show a transition of the magnetic anisotropy depending on its thickness. The anisotropy is perpendicular to the film plane for the thicknesses of the film ⩽12 nm. This becomes in-plane in the films having thicknesses ⩾15 nm. The films are deposited onto the n-type GaAs (0 0 1) substrate by the usual thermal evaporation method and also by the electron beam evaporation in ultra high vacuum onto a GaAs epilayer in the standard molecular beam epitaxy system. The magnetization and ferromagnetic resonance (FMR) are observed in the temperature range from 4.2 to 300 K. For the discussion of the microscopic origin of the anomalous properties in magnetization and FMR experiments, the experimental results are reviewed by introducing a uniaxial anisotropy, which is calculated from the easy-axis and hard-axis magnetization data. This calculated anisotropy is able to explain the temperature and angle dependency of the FMR spectra of the Ni films. Hence the magnetization and FMR spectra are in agreement with the type of the anisotropy and its temperature dependency. In addition to these, the temperature dependence of the in-plane magnetic anisotropy is able to explain the previously reported anomalous effect of reducing the squareness at low temperatures in Ni/GaAs.     

Development and integration of near atmospheric N2 ambient sputtered Au thin film for enhanced infrared absorption

The exceedingly fragile nature of thermally grown Au-black coating makes handling and patterning a critical issue. Infrared absorption characteristics of near atmospheric, N₂ ambient DC sputtered Au thin films are studied for this purpose. The thin Au films are sputtered at different chamber pressures in Ar and N₂/Ar gas ambient from 4.5 to 8.0 mbar and optimized for enhanced infrared absorption. The absorber film sputtered in N₂/Ar ambient at 8.0 mbar chamber pressure offers significant absorption of medium to long wave infrared radiations. The micro-patterning of sputtered Au thin film is carried out by using conventional photolithography and metal lift off methods on a prefabricated µ-infrared detector array on Si (1 0 0) substrate. The steady state temperature response of sputtered film has been examined using nondestructive thermal imaging method under external heating of the detector array.     

Substrate bias effects during diamond like carbon film deposition by microwave ECR plasma CVD

Diamond like carbon (DLC) coatings were deposited on silicon(1 1 1) substrates by microwave electron cyclotron resonance (ECR) plasma CVD process using a plasma of Ar and CH₄ gases under the influence of DC self bias generated on the substrates by application of RF (13.56 MHz) power. DLC coatings were deposited under the varying influence of DC bias (−60 V to −150 V) on the Si substrates. Deposited films were analyzed by different techniques like: X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), atomic force microscopy (AFM), Hardness and elastic modulus determination technique, Raman spectroscopy, scanning electron microscopy (SEM) and contact angle measurement. The results indicate that the film grown at −100 V bias has optimised properties like high sp³/sp² ratio of carbon bonding, high refractive index (2.26–2.17) over wide spectral range 400–1200 nm, low roughness of 0.8 nm, high contact angle (80°) compared to the films deposited at other bias voltages (−60 V and −150 V). The results are consistent with each other and find august explanation under the subplantation model for DLC growth.     

Microstructures and nano mechanical properties of the metal tungsten film

The W film was prepared on 1045 steel by magnetron sputtering, with the thickness of 2 μm, its surface and cross-section morphologies were investigated with SEM, and the phase structure was analyzed with XRD. X-ray stress determinator was utilized to measure its residual stress, and the nano-hardness and elastic modulus of the film were surveyed by nano-indentation tester. The results show that the surface of W film is very compact and smooth; the particles arranged regularly, the granularity of the thin film is about 1 μm. The microcracks, cavities and desquamation were not found in the film and interface, and the bonding between the W film and substrate is well. The XRD results showed that the W film had a body-centered cubic structure, the lattice constant: a = 0.316 nm, the growth preferred orientations are (1 1 0) and (2 2 0). The compressive stress (−169 MPa) was found on the surface. The average nano-hardness and elastic modulus of W film are 15.22 GPa, 176.64 GPa, respectively, and the mechanical properties of W film are well.     

Field electron emission from amorphous carbon thin films grown by RF magnetron sputtering

Using a RF magnetron sputtering, amorphous carbon (a-C) and N-doped a-C (a-C:N) thin films were fabricated as field electron emitter. These thin films were deposited on Si(0 0 1) substrate at several temperatures. The field emission property was improved for a-C thin films grown at higher substrate temperatures. Furthermore, a-C:N film exhibits field emission property better than that of undoped a-C film. These results are explained in terms of the change in surface morphology and structural properties of a-C film.     

Effect of annealing on the electrochemical properties of the Li–Mn–O thin films,prepared by high frequency RF magnetron sputtering

Li–Mn–O films are deposited by RF magnetron sputtering using 27.12 MHz as the excitation frequency. The sputtering rate of deposition is found to be higher than the one with conventional sputtering frequency. The rate of deposition as high as 42 Å/min has been achieved using this frequency. The X-ray diffraction patterns of films annealed in air show a gradual increase in crystallinity with the increase in annealing temperature. The electrochemical studies reveal that the films annealed at 700 °C show the best results in terms of crystallinity as well as discharge capacity. It is evident from this investigation that the higher excitation frequency magnetron discharge enhances the nucleation, and there by the rate of sputtering. This can be due to the reduced dc voltage appearing at the target surface at higher excitation frequency, which reduces the unnecessary ion bombardment of the growing film.     

Effect of GZO thickness and annealing temperature on the structural,electrical and optical properties of GZO/Ag/GZO sandwich films

The GZO/Ag/GZO sandwich films were deposited on glass substrates by RF magnetron sputtering of Ga-doped ZnO (GZO) and ion-beam sputtering of Ag at room temperature. The effect of GZO thickness and annealing temperature on the structural, electrical and optical properties of these sandwich films was investigated. The microstructures of the films were studied by X-ray diffraction (XRD). X-ray diffraction measurements indicate that the GZO layers in the sandwich films are polycrystalline with the ZnO hexagonal structure and have a preferred orientation with the c-axis perpendicular to the substrates. For the sandwich film with upper and under GZO thickness of 40 and 30 nm, respectively, it owns the maximum figure of merit of 5.3 × 10⁻² Ω⁻¹ with a resistivity of 5.6 × 10⁻⁵ Ω cm and an average transmittance of 90.7%. The electrical property of the sandwich films is improved by post annealing in vacuum. Comparing with the as-deposited sandwich film, the film annealed in vacuum has a remarkable 42.8% decrease in resistivity. The sandwich film annealed at the temperature of 350 °C in vacuum shows a sheet resistance of 5 Ω/sq and a transmittance of 92.7%, and the figure of merit achieved is 9.3 × 10⁻² Ω⁻¹.     

A high (0 0 1)-oriented CoPt/Ag film deposited on glass substrate

The magnetic properties and structures of CoPt_15 nm/Ag_0−100 nm films deposited by DC magnetron sputtering on glass substrates have been studied. The (0 0 1) texturing was improved by introducing an Ag underlayer. As the Ag underlayer thickness was 100 nm, a nearly perfect (0 0 1)-textured CoPt film was obtained.     

Influence of growth temperature and deposition duration on the structure,surface morphology and optical properties of InN/YSZ (1 0 0)

InN films with the wurtzite structure have been grown directly on YSZ (1 0 0) substrate by the RF-magnetron sputtering technique. Strongly (0 0 2) oriented films with smooth surfaces (0.7–2.9 nm surface roughness depending on substrate temperature), were grown within 30 min. Films deposited for 60 min developed three-dimensional (3D) pyramidal islands on top of their surfaces, which diminished the residual elastic strain. The optical absorption edge and PL peak energy around 1.7 eV were found to redshift with increasing film thickness and substrate temperature.     

Application of indium tin oxide (ITO) thin film as a low emissivity film on Ni-based alloy at high temperature

Indium tin oxide (ITO) films as the low emissivity coatings of Ni-based alloy at high temperature were studies. ITO films were deposited on the polished surface of alloy K424 by direct current magnetron sputtering. These ITO-coated samples were heat-treated in air at 600–900 °C for 150 h to explore the effect of high temperature environment on the emissivity. The samples were analyzed by X-ray diffraction (XRD), SEM and EDS. The results show that the surface of sample is integrity after heat processing at 700 °C and below it. A small amount of fine crack is observed on the surface of sample heated at 800 °C and Ti oxide appears. There are lots of fine cracks on the sample annealed at 900 °C and a large number of various oxides are detected. The average infrared emissivities at 3–5 μm and 8–14 μm wavebands were tested by an infrared emissivity measurement instrument. The results show the emissivity of the sample after annealed at 600 and 700 °C is still kept at a low value as the sample before annealed. The ITO film can be used as a low emissivity coating of super alloy K424 up to 700 °C.     

The influence of Au thickness on the structural,optical and electrical properties of ZnO/Au/ZnO multilayer films

Transparent and conductive ZnO/Au/ZnO (ZAZ) multilayer films were deposited on glass substrates by magnetron sputtering without intentional substrate heating. The thickness of Au interlayer was set at 1, 2 and 3 nm.The observed structural, optical and electrical properties were dependent on the thickness of the Au interlayer. For all of the ZAZ films, the diffraction peaks in the XRD pattern were identified as the (002) and (103) planes of a ZnO films and the (111) plane of an Au interlayer. The ZAZ films with a 2 nm thick Au interlayer showed a higher figure of merit than the other ZAZ films prepared in this study, and they also demonstrated the relatively high work function of 5.13 eV.From these results, we concluded that a ZAZ film with a 2 nm thick Au interlayer is an alternative candidate for use as a transparent electrode in OLEDs and various flat panel displays.     

Growth kinetics and photoelectrochemical (PEC) performance of cadmium selenide thin films: pH and substrate effect

Cadmium selenide (CdSe) thin films have been electrochemically deposited on the stainless steel (SS) and fluorine-doped tin oxide (FTO) coated glass substrates at room temperature (27 °C). The growth kinetics of CdSe thin films was studied by using cyclic voltammetry and chronoamperometry with variation in the pH of the electrolytic bath. In addition, the influence of the substrate on the microstructural properties of CdSe is plausibly explained. The photoelectrochemical (PEC) characterization of the film has been carried out to optimize the preparative parameters. X-ray diffraction data reveal growth of the cubic phase with preferential orientation along (1 1 1) direction. Compositional analysis of the film shows nearly stoichiometric film formation at pH 2.7. Uniform film formation with nano-sized grains was seen from SEM images. Optical absorption studies reveal that the pH of the electrolytic solution has a significant effect on the band gap of the film. PEC study revealed that CdSe film deposited at pH 2.7 on SS substrate showed better photosensitivity as compared to the film deposited on FTO coated glass.     

An infrared pyroelectric detector improved by cool isostatic pressing with cup-shaped PZT thick film on silicon substrate

In this paper, we presented a new pyroelectric detector with back to back silicon cups and micro-bridge structure. The PZT thick film shaped in the front cup was directly deposited with designed pattern by electrophoresis deposition (EPD). Pt/Ti Metal film, which was fabricated by standard photolithography and lift-off technology, was sputtered to connect the top electrode and the bonding pad. The cold isostatic press (CIP) treatment could be applied to improve the pyroelectric properties of PZT thick film. The infrared (IR) properties the CIP-optimized detector were measured. The voltage responsivity (R_V) was 4.5 × 10² V/W at 5.3 Hz, the specific detectivity (D^*) was greater than 6.34 × 10⁸ cm Hz^1/2 W⁻¹ (frequency > 110 Hz), and the thermal time constant was 51 ms, respectively.     

Electrical and structural investigations of perovskite structure reactively sputter deposited coatings

Sr(Zr_0.84Y_0.16)_0.91O_3 ? δ (SZY) and Ba(Zr_0.84Y_0.16)_0.96O_3 ? δ (BZY) protonic conductor coatings were co-sputter deposited from metallic targets in argon–oxygen reactive gas mixtures. The chemical and structural features were investigated by energy dispersive X-ray spectroscopy and X-ray diffraction, and their morphology was assessed by scanning electron microscopy of the surface and of brittle fracture cross sections. The electrical properties of the coating were determined by complex impedance spectroscopy as a function of temperature in air. Relationships are established between the electrical properties and the morphology of the coatings. The SZY as deposited coatings is amorphous and crystallises under the convenient perovskite structure after annealing treatment at 873 K under air. The BZY as deposited coatings is crystallised at 523 K in situ under perovskite structure and a further annealing treatment increases the grain size. Conductivities and activation energies of crystallised coatings were 3.1 · 10^? 5 S cm^? 1/2 · 10^? 5 S cm^? 1 and 0.65 eV/0.71 eV after stabilization at 773 K for strontium and barium zirconate, respectively.     

The initial growth structure of Ni1-xFex (x=0.6–0.8) films dc-biased plasma-sputter-deposited on Ni/MgO(0 0 1), and on Fe/MgO(0 0 1)

Cross sectional and plane-view transmission electron microscopy (X- and PV-TEM) were used to investigate the initial growth phase of 5, 10, 20 and 40 nm thick Ni_1-xFe_x (x=0.6–0.8) films, prepared on MgO(0 0 1) covered with a buffer layer of Fe or Ni as well as on naked MgO(0 0 1). The 100 nm thick buffer layers of Fe and Ni were pre-grown on MgO(0 0 1). All of Ni_0.20Fe_0.80, Ni_0.40Fe_0.60, Fe and Ni films could be epitaxially grown at 250°C by dc-biased plasma sputtering at 2.9 kV in pure Ar gas.The films of Ni_0.20Fe_0.80 and Ni_0.40Fe_0.60 were grown in their own stable phase, bcc and fcc on MgO(0 0 1), respectively. However, Ni_0.20Fe_0.80 film could be grown in fcc phase pseudomorphic with Ni(0 0 1) up to 20 nm thick on Ni/MgO(0 0 1), while Ni_0.40Fe_0.60 film in bcc phase pseudomorphic with Fe(0 0 1) up to 10 nm thick on Fe/MgO(0 0 1). With increasing thickness, their growth phases transformed into their own stable phases. Whether or not the pseudomorphic phase may be induced and what its critical thickness may be should depend primarily on the lattice misfit between the crystal planes in contact. The growth mode of Ni_0.40Fe_0.60 film was investigated more in details to be compared with the simulations of the average strain energy versus thickness and with those of the critical thickness of the pseudomorphic films versus the lattice misfit between the contacted crystal planes.     

Evaluation of phase,composition, microstructure and properties in TiC/a-C:H thin films deposited by magnetron sputtering

Titanium carbide/amorphous-carbon (TiC/a-C:H) nanocomposite coatings deposited by pulsed unbalanced reactive magnetron sputtering have been investigated in terms of structure, chemical and phase composition by AFM, TEM, XPS and XRD analyses. Subject to total carbon content, metallic titanium, titanium carbide and amorphous-carbon phases were found in the deposited coatings, which contributed to the observed microstructures and morphologies. The specific resistivity of nanocomposite coatings scales up with increasing amount of matrix-forming carbon. Hardness profiles of the different compositions revealed that nearly stoichiometric TiC films with average crystallite size of 70 nm exhibit the maximum hardness, whereas the lowest friction coefficient (μ<0.1) was found in films rich in amorphous-carbon and containing smaller TiC nanocrystallites (〈d〉 ∼ 10 nm).     

Densely mapping the phase diagram of cuprate superconductors using a spatial composition spread approach

A novel spatial composition spread approach was used successfully to deposit a 52-member library of La_2?xSr_xCuO₄ (0 ? x ? 0.18) using magnetron sputtering combined with physical masking techniques. Two homemade targets of La₂CuO₄ and La_1.82Sr_0.18CuO₄ were sputtered at a power of 41 W RF and 42 W DC, respectively, in a process gas of 15 mTorr argon. The libraries were sputtered onto LaSrAlO₄ (0 0 1), SrTiO₃ (1 0 0) and MgO (1 0 0) substrates through a 52-slot shadow mask for which a ?20 V substrate bias was applied to prevent resputtering. The resulting amorphous films were post-annealed (800 °C for 1 h then at 950 °C for 2 h) in a tube sealed with oxygen gas. Wavelength Dispersive Spectroscopy (WDS) analysis revealed the expected linear variation of Sr content from 0 to 0.18 with an approximate change of 0.003 per library member. Transport measurements revealed superconducting transitions as well as changes in the quasiparticle scattering rate. These transitions and scattering rate changes were mapped to produce the T-hole concentration phase diagram.     

Luminescence intensity and dopant concentration in AlN:Tb

The luminescence intensity of Tb³⁺ embedded in sputter deposited and subsequently annealed AlN shows strong concentration dependence. The intensity of the characteristic green luminescence of Tb³⁺ rises at low concentrations with rising concentration. At higher concentrations, strong concentration quenching occurs. The optimum concentration range of Tb³⁺ in AlN was observed to range between 2.5 at% Tb and 3.6 at% Tb. The experimentally evaluated concentration dependence results can be described by a rate equation approach based on available models of luminescence quenching.