NEMS/MEMS tools for nanoelectronics development

Present information technologies use semiconductor devices and magnetic/optical discs, however, they are all foreseen to face fundamental limitations within a decade. Therefore, superseding devices are required for the next paradigm of high performance information technologies. This paper describes prospects for single molecule devices suitable for future information processing technologies. Possible four milestones for realizing the Peta (P: 10¹⁵)/Exa (E: 10¹⁸)––floating operations per second (FLOPS) personal molecular supercomputer are proposed. Current status and necessary technologies of the first milestone are described, and necessary technologies for the next three milestones are also discussed.     

Au电极连接富勒烯C32分子的电子结构与传输特性

采用基于密度泛函理论(DFT)和非平衡格林函数(NEGF)的第一性原理方法对富勒烯C₃₂分子及在C₃₂分子的距离最远的两个碳原子处连接Au(1,1,1)电极的分子器件进行了电子结构和电子输运性质的研究.考虑到中间分子与Au电极间距离变化的情况,通过计算得出了在不同距离下分子器件的电子传输谱和I-V特性,分析了各器件的电子结构和电子输运特性产生的原因,并分析了电极与中间分子的连接距离及门电压对分子器件电子输运的影响.得出了电极与所连接的中间分子之     

绿色环保化学机械抛光液的研究进展

原子级加工制造是实现半导体晶圆原子尺度超光滑表面的有效途径.作为大尺寸高精密功能材料的原子级表面制造的重要加工手段之一,化学机械抛光(chemical mechanical polishing,CMP)凭借化学腐蚀和机械磨削的耦合协同作用,成为实现先进材料或器件超光滑无损伤表面平坦化加工的关键技术,在航空、航天、微电子等众多领域得到了广泛应用.然而,为了实现原子层级超滑表面的制备,CMP工艺中常采用的化学腐蚀和机械磨削方法需要使用具有强烈腐蚀性和高毒性的危险化学品,对生态系统产生了不可逆转的危害.因此,本文以绿色环保高性能抛光液作为对象,对加工原子量级表面所采用的化学添加剂进行分类总结,详尽分析在CMP过程中化学添加剂对材料表面性质调制的作用机理,为在原子级尺度下改善表面性质提供可参考的依据.最后,提出了CMP抛光液在原子级加工研究中面临的挑战,并对未来抛光液发展方向作出了展望,这对原子尺度表面精度的进一步提升具有深远的现实意义.     

紫外增强硅基成像探测器进展

硅基紫外成像探测技术具有可靠性好、集成度高、容易大面阵化、成本低等优势,成为探测领域的重要研究方向。随着硅半导体工艺的持续进步以及纳米科学的发展,利用半导体技术、荧光转换材料或者低维纳米结构来增强硅基探测器的紫外响应取得了长足的进步。本文综述了国内外硅基紫外增强成像探测器件、系统应用的进展,通过回顾器件发展的历史和对研究现状的分析,并结合紫外探测技术在天文物理、生化分析、电晕检测等领域的应用进展,探讨了硅基紫外成像探测技术发展的趋势和挑战。     

分子整流器的相关技术

分子整流器的相关技术是研究器件基础理论和未来付诸应用的关键问题之一。由于分子材料的特殊物理化学性质,原本成熟的普通半导体工艺不再适用。本文综述了目前在分子整流器研究领域广泛使用的相关技术,介绍了分子有序排列的各种组装技术,ＳＴＭ技术,电极制备技术等。分子器件的深入研究将会引起信息处理系统和材料科学的发展,对未来科学技术和社会发展产生深远的影响。     

All-optical computation — A parallel integrator based upon a single gate full adder

The achievement of low power all-optical bistability in small semiconductor devices at the end of the 1970's led to an upsurge in interest in all-optical information processing and optical computing. Based on the proven characteristics of existing bistable systems designs are put forward in this paper for a parallel optical integrator, using a single bistable element for full-adder operation. Optical storage or beam delay computational loops, and time-series to space-parallel conversion designs are presented.     

Progress of coherent optical fibre communication systems

The recent progress of coherent optical fibre communication systems is reviewed. System constituent technologies, such as coherent optical modulation-demodulation, optical direct amplification for repeaters and single polarization fibre transmission are outlined. Several important optical device technologies, such as frequency stabilization of semiconductor lasers, AM and FM quantum noise and their reduction, and integrated opto-electronic devices, are also described. Finally, on the basis of the current state of the art in these technological areas, the expected system performance and future problems are discussed.     

Assessment of ESD threats to electronic components

Electrostatic discharge (ESD) is a major source of failures in electronic devices and products detected during manufacturing. Reduction of semiconductor element dimensions as well as implementation of new product and production technologies have made many devices extremely vulnerable to disturbances of electrostatic origin. Effective ESD damage prevention requires that ESD threats are carefully assessed and understood. This paper reviews new research results on electrostatic discharges as well as tools for the assessment of ESD threats to electronic components. Influences of the new results on the ESD control are discussed. There is a need to modify existing standards for the ESD control in electronics industry in order to meet challenges related to the manufacturing of future electronic products.     

Atomically thin two-dimensional materials for functional electrodes of electrochemical devices

The development of atomically thin semiconductor nanocrystals for electrodes of various electrochemical devices is probably one of the fastest growing fields in the modern condensed conductive matter research. Two-dimensional (2D) nanocrystals have been established as a large class of nanostructures with unusual properties. In this study, specific characteristic, features and technologies of making the 2D nanocrystals including graphene for composite nanostructured electrodes of electrochemical devices are reviewed.     

面向单晶SiC原子级表面制造的等离子体辅助抛光技术

目前Si基半导体由于其自身材料特性的限制,已经越来越难以满足高速发展的现代电力电子技术对半导体器件的性能要求.SiC作为新一代半导体材料具有显著的性能优势,但由于其属于典型的难加工材料,实现SiC晶圆的高质量与高效率加工成为了推动其产业化应用进程的关键.本综述在回顾近年来SiC超精密加工技术研究进展的基础上,重点介绍了一种基于等离子体氧化改性的SiC高效超精密抛光技术,分析了该技术的材料去除机理、典型装置、改性过程及抛光效果.分析结果表明,该技术具有较高的去除效率,能够获得原子级平坦表面,并且不会产生亚表面损伤.同时针对表面改性辅助抛光技术加工SiC表面过程中出现的台阶现象,探讨了该台阶结构的产生机理及调控策略.最后对等离子体辅助抛光技术的发展与挑战进行了展望.     

瞬态光电流对有机薄膜光伏器件中肖特基接触的研究

制备了结构为氧化铟锡(ITO)/有机半导体/金属的有机薄膜光伏器件,电流--电压曲线显示其具有整流特性但有机半导体和电极间肖特基接触的内建电场方向很难判定.为了研究有机半导体和电极的肖特基接触特性,分别制备了结构为ITO/有机绝缘层/有机半导体/金属和ITO/有机半导体/有机绝缘层/金属的器件,通过调制激光照射下器件的瞬态光电流方向可容易判断有机半导体和电极间肖特基接触的内建电场方向,外加偏压下瞬态光电流的强度变化进一步证实了判断的正确性.     

Heating rate and electrode charging measurements in a scalable, microfabricated, surface-electrode ion trap

We characterise the performance of a surface-electrode ion “chip” trap fabricated using established semiconductor integrated circuit and micro-electro-mechanical-system (MEMS) microfabrication processes, which are in principle scalable to much larger ion trap arrays, as proposed for implementing ion trap quantum information processing. We measure rf ion micromotion parallel and perpendicular to the plane of the trap electrodes, and find that on-package capacitors reduce this to ?10?nm in amplitude. We also measure ion trapping lifetime, charging effects due to laser light incident on the trap electrodes, and the heating rate for a single trapped ion. The performance of this trap is found to be comparable with others of the same size scale.     

面发射分布反馈半导体激光器及光栅耦合半导体激光器

阐述了以曲线光栅面发射分布反馈半导体激光器（SEDFB）为代表的SE—DFB器件的原理和结构,讨论了它们的性能和特点并与其他类型的半导体激光器进行了比较。指出依靠曲线光栅特殊的衍射特性,可实现对模式的控制和二维漏模耦合阵列化出光,得到窄线宽（典型值0．08nm）、小发散角（典型值0．5mrad）、高亮度（单管近衍射极限3W（CW））和大功率（单管最高73w,列阵为kW级）的激光。综述了SE—DFB的发展历程、现状及未来的发展趋势,强调由于曲线光栅耦合SE—DFB激光器兼具边发射和面发射器件的优势和诸多其他优秀性能,将其应用于不同材料体系,不同结构的半导体激光器及其阵列,制作不同波段的高功率、高光束质量的SEDFB器件会有很好的研究意义和应用前景。     

Electrical characteristics and optoelectronic properties of metal--semiconductor--metal structure with zinc oxide nanowires across Au electrodes

This paper reports on a method of assembling semiconducting ZnO nanowires onto a pair of Au electrodes to construct a metal--semiconductor metal （MSM） structure by dieleetrophoresis and studying on its electrical characteristics by using current-voltage （Ⅰ - Ⅴ） measurements. An electronic model with two back to back Sehottky diodes in series with a semiconductor of nanowires was established to study the electrical transport of the MSM structures. By fitting the measured Ⅰ - Ⅴ characteristics using the proposed model, the parameters of the Schottky contacts and the resistance of nanowires could be acquired. The photoelectric properties of the MSM structures were also investigated by analysing the measurements of the electrical transports under various light intensities. The deduced results demonstrate that ZnO nanowires and their Schottky contacts with Au electrodes both contribute to photosensitivity and the MSM structures with ZnO nanowires are potentially applicable for photonic devices.     

C50富勒烯分子的电子结构与传输特性研究

本文构建了Au原子面为电极的富勒烯C50分子的电子输运模型, 使用非平衡格林函数方法(Non-equilibrium Green's function, NEGF)对构建的Au电极和C50分子构成的分子器件进行了电子传输性质的计算. 通过计算得出了电子透射谱、电导曲线和电流电压曲线, 分析了产生这个分子器件电子输运性质的原因. 研究计算结果发现：C50分子具有量子器件的开关特性,并具有明显的半导体特征.     

Organic optoelectronic device fabrication using standard UV photolithography

The fabrication of organic optoelectronic devices requires patterning techniques that are compatible with organic semiconductor materials. Photolithography represents, by far, the dominant patterning approach for inorganic electronics and optoelectronics. High speed, parallel patterning capability, high resolution, and the availability of standard equipment make this technology also very attractive for applications in the field of organic semiconductor technology. In the present paper we present a successful implementation of photolithography to fabricate organic diodes. This process provides the basis for a future high‐resolution monolithic integration of organic optoelectronic and photonic devices into one photonic circuit. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Semiconductor processing

The impact of ion implantation on present day semiconductor device processing and future applications to simplify and improve processing are described.

So far implantation has generally been used to introduce electrically active dopants into the semiconductor but it can also be used to improve other stages of the technology of making semiconductor devices. Ion implantation can be used to improve masks, etching, step coverage, and slice distortion and such applications are reviewed.

The many processes involved in making semiconductor devices interact in a complex way. Apparently small changes, such as replacing depositions by implantation, can lead to unsatisfactory device properties unless significant changes are made in subsequent processing. The complex interactions make the design of new processes critical if optimum properties are to be achieved. Special constraints can be placed on the implantation process itself. Examples are given of these interactions.     

Review of flexible and transparent thin-film transistors based on zinc oxide and related materials

Flexible and transparent electronics enters into a new era of electronic technologies.Ubiquitous applications involve wearable electronics,biosensors,flexible transparent displays,radio-frequency identifications(RFIDs),etc.Zinc oxide(ZnO) and relevant materials are the most commonly used inorganic semiconductors in flexible and transparent devices,owing to their high electrical performances,together with low processing temperatures and good optical transparencies.In this paper,we review recent advances in flexible and transparent thin-film transistors(TFTs) based on ZnO and relevant materials.After a brief introduction,the main progress of the preparation of each component(substrate,electrodes,channel and dielectrics) is summarized and discussed.Then,the effect of mechanical bending on electrical performance is highlighted.Finally,we suggest the challenges and opportunities in future investigations.     

Directed self‐assembly of single quantum dots for telecommunication wavelength optical devices

The ability to control the nucleation site of a single quantum dot will have a profound effect on the development of quantum dot‐based photonic devices. The deterministic approach will provide a truly scalable technology that can take full advantage of conventional semiconductor processing for device fabrication. In this review, we discuss the progress towards the integration of deterministically nucleated single quantum dots with top‐down quantum optical devices targeting telecommunication wavelengths. Advances in site‐controlled quantum dot nucleation using selective‐area epitaxy now makes it possible to position quantum dots at predetermined positions on a substrate in registry with alignment markers. This, in turn, has allowed for devices fabricated in subsequent processing steps to be aligned to individual quantum dots. The specific devices being targeted are gated‐single dots and coupled dot‐cavity systems which are key components of efficient sources of single photons and entangled photon pairs.     

以石墨烯为电极的有机噻吩分子整流器的设计及电输运特性研究

传统硅基半导体器件受到了量子尺寸效应的限制,发展分子电子学器件有可能解决这一难题.本文提出了由石墨烯电极和有机噻吩分子相结合构造分子器件的思想,建构了"石墨烯-噻吩分子-石墨烯"结构的分子器件,并运用非平衡态格林函数结合密度泛函理论的方法研究了其电输运特性.系统地分析了电子给体"氨基"和电子受体"硝基"两种取代基的位置对有机噻吩分子电输运的影响.计算表明,有机噻吩二聚物被"氨基"和"硝基"取代后会产生明显的负微分电阻效应和整流效应.进一步对产生这些效应的物理机制进行分析,发现氨基的位置可以调整负微分电阻的强弱,硝基的位置可以改变整流的方向.