Structural,optical and electrical properties of europium picrate tetraethylene glycol complex as emissive material for OLED

A new europium complex [Eu(Pic)₂(H₂O)(EO4)](Pic)·0.75H₂O was synthesized and used as the emission material for the single layer device structure of ITO/EO4–Eu–Pic/Al, using a spin-coating technique. Study on the optical properties of the [Eu(Pic)₂(H₂O)(EO4)](Pic)·0.75H₂O complex where EO4=tetraethylene glycol and Pic=picrate anion, had to be undertaken before being applicable to the study of an organic light emitting diode (OLED). The electrical property of an OLED using current–voltage (I–V) measurement was also studied. In complex, the Eu(III) ion was coordinated with the EO4 ligand as a pentadentate mode, one water molecule, and with two Pic anions as bidentate and monodentate modes, forming a nine-coordination number. The photoluminescence (PL) spectra of the crystalline complex in the solid state and its thin film showed a hypersensitive peak at 613.5–614.9 nm that assigned to the ⁵D₀→⁷F₂ transition. A narrow band emission from the thin film EO4–Eu–Pic was obtained. The typical semiconductor I–V curve of device ITO/EO4–Eu–Pic/Al showed the threshold and turn on voltages at 1.08 and 4.6 V, respectively. The energy transfer process from the ligand to the Eu(III) ion was discussed by investigating the excitation and PL characteristics. Effect of the picrate anion on the device performance was also studied.     

Photo-curable epoxy functionalized cyclotetrasiloxane as a gate dielectric for organic thin film transistors

We synthesized a new photo-curable organic/inorganic hybrid material, cyclotetrasiloxane (CTS) derivative containing cyclohexene-1,2-epoxide functional groups (CTS-EPOXY), and its characteristics are compared with a prototypical organic gate insulator of poly(4-vinylphenol) (PVP) in the organic thin film transistors (OTFTs) using pentacene as an active p-type organic semiconductor. Compared with PVP, CTS-EPOXY shows better insulating characteristics and surface smoothness. A metal/insulator/metal (MIM) device with the 300-nm-thick CTS-EPOXY film shows more than two orders of magnitude lower current (less than 40 nA/cm² over the voltage range up to 60 V) compared with PVP. In addition, the pentacene TFT with CTS-EPOXY as a gate dielectric layer shows slightly higher field-effect mobility of μ_FET = 0.20 cm²/V s compared to that with PVP.     

An organic electroluminescent device made from a gadolinium complex

A gadolinium ternary complex, tris(1-phenyl-3-methyl-4-isobutyryl-5-pyrazolone) (phenanthroline) gadolinium [Gd(PMIP)₃(Phen)] was synthesized and used as a light emitting material in the organic electroluminescent (EL) devices. The triple layer device with a structure of indium tin oxide (ITO)/N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine (TPD) (20 nm)/Gd(PMIP)₃(Phen) (80 nm)/2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline (bathocuproine or BCP) (20 nm)/Mg: Ag(200 nm)/Ag(100 nm) exhibited green emission peaking at 535 nm. A maximum luminance of 230 cd/m² at 17 V and a peak power efficiency of 0.02 lm/w at 9 V were obtained.     

Synthesis,spectral characterization of CuPcF16 and its application in organic thin film transistors using p-6p as inducing layer

An air-stable n-channel semiconductor material, CuPcF₁₆, was synthesized in a slightly modified procedure and characterized by infrared (IR), X-ray diffraction (XRD), UV–vis and fluorescence spectra. CuPcF₁₆ showed a monomer characteristic in THF and pyridine while exhibited an aggregation property in DMF. The CuPcF₁₆/p-6p (CuPcF₁₆ on p-6p) organic thin film transistors (OTFTs) using CuPcF₁₆ as an active layer and p-6p as an inducing layer was fabricated by the physical vapor deposition technique. Charge carrier field-effect mobility (μ), I_on/I_off and threshold voltage (V_T) of the CuPcF₁₆/p-6p OTFTs were 0.07 cm²/V s, 10⁵ and 5.28 V, respectively. The charge mobility of the OTFTs was two or even three times higher than that of the conventional single layer CuPcF₁₆-based OTFTs. The improved performance was attributed to the introduction of p-6p to form a highly oriented and continuous film of CuPcF₁₆ with the molecular π–π conjugated direction parallel to the substrate.     

High-efficiency organic light-emitting diodes (OLEDs) with a mixed layer structure

Improved performance of organic light-emitting diodes (OLEDs) as obtained by a mixed layer was investigated. The OLEDs with a mixed layer which were composed of N,N′-diphenyl-N,N′-bis(1-napthyl-phenyl)-1,1′-biphenyl-4,4′-diamine (NPB), tris-(8-hydroxyquinolato) aluminum (Alq₃) and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) showed the highest brightness and efficiency, which reached 19048 cd/m² at 17 V and 4.3 cd/A at 10 mA/cm², respectively. The turn-on voltage of the device is 2.6 V. Its Commission Internationale del’Eclairage (CIE) coordinate is (0.497, 0.456) at 17 V, and the CIE coordinates of the device are largely insensitive to the driving voltages, which depicts stabilized yellow color.     

Measurement of optical and surface properties of PLZT thin films

Lanthanum-modified lead zirconate titanate (Pb_0.93La_0.07(Zr_0.3Ti_0.7)_0.93O₃, PLZT7/30/70) thin films with and without a seeding layer of PbTiO₃ (PT) were successfully deposited on indium-doped tin oxide (ITO) coated glass substrate via spin coating in conjunction with a sol–gel process, and a top transparent conducting thin film of SnO₂ was also prepared in the same way. The thicknesses of PLZT and PT layers are 0.5 μm and 24 nm, respectively. The retardance of PLZT film was measured by a new heterodyne interferometer and enhanced by application of a seeding layer of PT. The Pockels linear electro-optical coefficient of PLZT film with a PT layer was determined to be 3.17 × 10^?9 m/V when the refractive index is considered as 2.505, which is one order larger than 1.4 × 10^?10 m/V for PLZT12/40/60 doped with Dy reported in the literature. The root-mean-square (rms) roughness of PLZT thin film with a PT layer (R_rms = 6.867 nm) was larger than that of PLZT film (R_rms = 0.799 nm). From the comparisons, the average transmittance of PLZT film with a PT seeding layer was 77.01%, which was a little smaller than that of PLZT film (around 80.75%). Experimental results imply that the PT seeding layer plays a key role in the increase of retardance value, leading to a higher Pockels coefficient.     

Photo-induced isomerization of poly 4′-(6-acryloxy) hexyloxy-4-methoxyazobenzene ultra-thin solid film prepared by Langmuir–Blodgett technique

The photo-induced response of an ultra thin polymeric film of poly 4′-(6-acryloxy) hexyloxy-4-methoxyazobenzene (P5) is investigated. A monolayer of P5 at a gas–water interface possesses a mean molecular area of 28.0 Å²/monomer-repeat. Multilayer films of P5 were prepared by horizontal deposition at a surface pressure of 25 mN/m². The uniformity of the transfer process is shown by UV–vis absorption spectra where a linear relationship between the absorption maxima and the number of transferred layer was observed. The average layer thickness of the transferred film determined by XRD measurements is 34.0 Å. This is longer than the length of the azobenzene side group. The transferred film shows a blue shift of the π–π¹ transition from 357 nm for the P5 in solution to 340 nm for the P5 in the film. This suggests the formation of H-aggregate with a head-to-head arrangement of the dipole within the film. The optical property of the transferred film is changed by the irradiation of the film with the UV light at 385 nm. An irreversible change in its molecular packing in the film is seen in the shift of the UV–vis absorption maxima and the change in morphology as observed by AFM. The film morphology changes from being a smooth film into an island-like surface when exposed to the UV irradiation. The layer structure in the film is destroyed. A mass transport is observed during the cis–trans thermal back isomerization process. This suggests that movement of the P5 took place in both the trans–cis isomerization process and the cis–trans back isomerization process. The first movement leads to a molecular expansion while the second, to a molecular contraction.     

The improvement of pyroelectric properties of PZT thick films on Si substrate by TiOx barrier layer

The effects of TiO_x diffusion barrier layer thickness on the microstructure and pyroelectric characteristics of PZT thick films were studied in this paper. The TiO_x layer was prepared by thermal oxidation of Ti thin film in air and the PZT thick films were fabricated by electrophoresis deposition method (EPD). To demonstrate the barrier effect of TiO_x layer, the electrode/substrate interface and Si content in PZT thick films were characterized by scanning electron microscope (SEM) and X-ray energy dispersive spectroscopy (EDS), respectively. The TiO_x barrier thickness shows significant influence on the bottom electrode and the pyroelectric performance of the PZT thick films. The average pyroelectric coefficient of PZT films deposited on 400 nm TiO_x layer was about 8.94 × 10⁻⁹ C/(cm² K), which was improved by 70% than those without diffusion barrier layer. The results showed in this study indicate that TiO_x barrier layer has great potential in fabrication of PZT pyroelectric device.     

An infrared pyroelectric detector improved by cool isostatic pressing with cup-shaped PZT thick film on silicon substrate

In this paper, we presented a new pyroelectric detector with back to back silicon cups and micro-bridge structure. The PZT thick film shaped in the front cup was directly deposited with designed pattern by electrophoresis deposition (EPD). Pt/Ti Metal film, which was fabricated by standard photolithography and lift-off technology, was sputtered to connect the top electrode and the bonding pad. The cold isostatic press (CIP) treatment could be applied to improve the pyroelectric properties of PZT thick film. The infrared (IR) properties the CIP-optimized detector were measured. The voltage responsivity (R_V) was 4.5 × 10² V/W at 5.3 Hz, the specific detectivity (D^*) was greater than 6.34 × 10⁸ cm Hz^1/2 W⁻¹ (frequency > 110 Hz), and the thermal time constant was 51 ms, respectively.     

Solution-processed white organic light-emitting diodes with mixed-host structures

Efficient white light-emitting diodes (WOLEDs) were fabricated with a solution-processed single emission layer composed of a molecular and polymeric material mixed-host (MH). The main host used was a blue-emitting molecular material of 4,4′-bis(2,2′-diphenylvinyl)-1,1′-biphenyl (DPVBi) and the assisting host used was a hole-transport-type polymer of poly(9-vinylcarbazole) (PVK). By co-doping 4,4′-bis[2-(4-(N,N-diphenylamino)phenyl)vinyl]biphenyl and 5,6,11,12-tetraphenylnaphacene into the MH, the performances of the fabricated devices made with different mixing ratio of host materials were investigated, and were to depend on the mixing ratios. Under the optimal PVK:DPVBi ratio (3:7), we achieved a maximum luminance of 14 110 cd/m² and a maximum current efficiency of 9.5 cd/A. These improvements were attributed to the MH structure, which effectively improved the thermal stability of spin-coated film and enhanced the hole-injection/transporting properties of WOLEDs.     

Structural and magnetic properties of HCP-CoCrPt–SiO2 granular media

Granular HCP-(CoCrPt)_100−x(SiO₂)_x thin films with Cr underlayers have been fabricated by sputtering multilayers followed by post-deposition annealing. Magnetic and structural properties of the films for potential applications in magnetic recording media have been investigated in detail. In as-deposited films coercivities exceeding 2.5 kOe have been obtained with SiO₂ varying from 8 to 16 vol%; high coercivity of 5.6 kOe and anisotropy of 4.6×10⁶ erg/cm³ have been achieved at low M_rt value (about 0.4 memu/cm²) in the post-annealed films. VSM measurements showed that the magnetic moment lies well in the film plane under proper preparation conditions. Grain isolation in the magnetic layer was improved by segregating SiO₂ into grain boundaries and further enhanced by post-deposition annealing. The rapid increase of the coercivity upon annealing is most likely due to the significant decrease in intergranular exchange coupling, as shown by the δM measurement in which the peak value of δM curves changed from a positive value to a negative value upon annealing. Magnetic reversal properties of the films have also been systematically studied. These results show that the HCP-CoCrPt–SiO₂ granular film is a promising candidate for ultra-high-density recording media up to 100 Gbit/in² or beyond because of its low Pt content and desirable properties.     

Quantum yield of Eu2+ emission in (Ca1−xSrx)S:Eu light emitting diode converter at 20–420 K

A series of red-emitting light converters Ca_1?xSr_xS:Eu²⁺, with tunable composition-dependent emission maxima were synthesized and characterized concerning their photoluminescent (PL) properties. X-ray diffraction patterns, photoluminescence spectra, luminosities and quantum yields were compared for phosphors with strontium concentrations varying from 0 to 100%. The maxima wavelength of emission shifts from 663 down to 619 nm, originating from the dependence of Eu²⁺ 5d state energy on the surrounding crystal field. Upon increasing the temperature from 20 to 420 K, a broadening of emission spectra along with thermal quenching of emission intensity and quantum yield occurs. Satisfying PL properties and their thermal stability demonstrate that the phosphors could be used as light converters in light emitting diodes (LEDs).     

Electrical characteristics and efficiency of organic light-emitting diodes depending on hole-injection layer

In a device structure of ITO/hole-injection layer/N,N′-biphenyl-N,N′-bis-(1-naphenyl)-[1,1′-biphthyl]4,4′-diamine(NPB)/tris(8-hydroxyquinoline)aluminum(Alq₃)/Al, we investigated the effect of the hole-injection layer on the electrical characteristics and external quantum efficiency of organic light-emitting diodes. Thermal evaporation was performed to make a thickness of NPB layer with a rate of 0.5–1.0 Å/s at a base pressure of 5 × 10⁻⁶ Torr. We measured current–voltage characteristics and external quantum efficiency with a thickness variation of the hole-injection layer. CuPc and PVK buffer layers improve the performance of the device in several aspects, such as good mechanical junction, reducing the operating voltage, and energy band adjustment. Compared with devices without a hole-injection layer, we found that the optimal thickness of NPB was 20 nm in the device structure of ITO/NPB/Alq₃/Al. By using a CuPc or PVK buffer layer, the external quantum efficiencies of the devices were improved by 28.9% and 51.3%, respectively.     

Third order nonlinear optical properties of ethyltriphenylphosphonium bis(2-thioxo-1,3-dithiole-4,5-dithiolato)aurate (III)

A novel organometallic compound, ethyltriphenylphosphonium bis(2-thioxo-1,3-dithiole-4,5-dithiolato)aurate (III), abbreviated as TPEPADT, was synthesized. The TPEPADT doped poly(methyl methacrylate) (PMMA) thin film with a mass fraction of 1% (1 wt.%) was prepared by using a spin-coating method. The third-order nonlinear optical properties of TPEPADT in acetonitrile solution and TPEPADT-doped PMMA thin film were investigated by using the laser Z-scan technique at the wavelength 1064 nm with laser duration of 20 ps. The linear refractive index of the polymer thin film was also studied. The Z-scan curves revealed that both TPEPADT in acetonitrile solution and the polymer thin film possessed negative nonlinear refraction, exhibiting a self-defocusing effect and nonlinear absorption was negligible under the experimental conditions used. The nonlinear refractive index was calculated to be ?1.9 × 10^?18 m²/W for TPEPADT in acetonitrile solution and ?8.9 × 10^?15 m²/W for the polymer thin film. These results suggest that TPEPADT have potential for the application of all-optical switching devices.     

The effect of Ag layer thickness on the properties of WO3/Ag/MoO3 multilayer films as anode in organic light emitting diodes

Transparent conductive WO₃/Ag/MoO₃ (WAM) multilayer electrodes were fabricated by thermal evaporation and the effects of Ag layer thickness on the optoelectronic and structural properties of multilayer electrode as anode in organic light emitting diodes (OLEDs) were investigated using different analytical methods. For Ag layers with thickness varying between 5 and 20 nm, the best WAM performances, high optical transmittance (81.7%, at around 550 nm), and low electrical sheet resistance (9.75 Ω/cm²) were obtained for 15 nm thickness. Also, the WAM structure with 15 nm of Ag layer thickness has a very smooth surface with an RMS roughness of 0.37 nm, which is suitable for use as transparent conductive anode in OLEDs. The current density?voltage?luminance (J?V?L) characteristics measurement shows that the current density of WAM/PEDOT:PSS/TPD/Alq₃/LiF/Al organic diode increases with the increase in thickness of Ag and WO₃/Ag (15 nm)/MoO₃ device exhibits a higher luminance intensity at lower voltage than ITO/PEDOT:PSS/TPD/Alq₃/LiF/Al control device. Furthermore, this device shows the highest power efficiency (0.31 lm/W) and current efficiency (1.2 cd/A) at the current density of 20 mA/cm², which is improved 58% and 41% compared with those of the ITO-based device, respectively. The lifetime of the WO₃/Ag (15 nm)/MoO₃ device was measured to be 50 h at an initial luminance of 50 cd/m², which is five times longer than 10 h for ITO-based device.     

Hydrothermal synthesis of self-emitting Y(V,P)O4 nanophosphors for fabrication of transparent blue-emitting display device

Self-emiting Y(V_x,P_1?x)O₄ blue nanophosphors with various compositons (x=0.1–0.9) were synthesized by a facile hydrothermal route and subsequently annealed at different temperatures of 800–1100 °C for 2 h. A higher content of vanadate in Y(V,P)O₄ nanophosphors resulted in a larger particle growth upon annealing. The blue luminescence under a vacuum ultraviolet excitation increased with an increasing phosphate content. Considering the size and luminescence, Y(V_0.1,P_0.9)O₄ nanophosphors annealed at 800, 1000, and 1100 °C were used for the formation of transparent blue emissive layer. Nanophosphor layer was uniformly deposited on glass substrate by a screen-printing. ～0.9 μm thick nanophosphor layer that was prepared with 1000 °C-annealed Y(V_0.1,P_0.9)O₄ nanophosphor showed a high visible transmittance value of 78%. Transparent blue-emitting test panel of plasma display was simply fabricated using nanophosphor layer/glass as a rear panel and combining it with the front panel used in the current plasma display panel, and their discharge luminance properties were discussed.     

Inorganic polymer phosphazene disulfide as cathode material for rechargeable lithium batteries

Novel inorganic network polymer phosphazene disulfide [(NPS₂)₃]_n was synthesized by a solution cross-link method. IR and element content analysis confirmed the polymer's molecular structure. The polymer has an average particle size of d_0.5 = 7.7 μm and the specific surface area is 57.4 m² g^− 1. TG/DTA analysis showed that [(NPS₂)₃]_n underwent a decomposition reaction from 200 to 300 °C. When used as cathode material in lithium batteries, its initial discharge capacity was 459.1 mAh g^− 1, which is almost 93.5% of theoretical specific capacity (490.9 mAh g^− 1). After 30 charge–discharge cycles, the discharge capacity of [(NPS₂)₃]_n stabilized at approximately 400.1 mAh g^− 1 which revealed an excellent cyclic ability. Therefore [(NPS₂)₃]_n is of great potential as cathode material for secondary lithium batteries.     

Synthesis of oligomeric poly[(1, 2-propanediamine)-alt-(oxalic acid)] and anomalous proton conductivities of the thin films

New proton-conductive polyamide oligomers, oligomeric poly[(1, 2-propanediamine)-alt-(oxalic acid)], were synthesized to investigate the proton transport properties of bulk and thin films. The obtained oligomers were characterized by the X-ray diffraction, FT-IR spectra, ¹H NMR, Matrix Assisted Laser Desorption/Ionization Time of Flight (MALDI-TOF) mass spectrum, and electrical conductivity measurements. The bulk proton conductivity is 3.0 × 10^? 4 S cm^? 1 at the relative humidity (RH) of 80%. The proton conductivity of thin film is relatively higher than that of bulk sample. Thickness dependence of the proton conductivity was observed in these thin films. The maximum proton conductivity of the thin film is 4.0 × 10^? 3 S cm^? 1 at the relative humidity (RH) of 80%, which is higher one order magnitude than that of the bulk sample. The activation energies of bulk and 200 nm thick film are 1.0 and 0.69 eV at the RH of 60%, respectively.     

Structural and optical properties of chromotrope 2R thin films of different thicknesses

Chromotrope 2R (CHR) films of different thicknesses have been prepared using spin coater. The material has been characterized using FT-IR, DTA and X-ray diffraction. The XRD of the material in powder and thin film forms showed polycrystalline structure with triclinic phase. Preferred orientation at the (1 1 4) plane is observed for the deposited films. Initial indexing of the XRD pattern was performed using “Crystalfire” computer program. Miller indices, h k l, values for each diffraction line in X-ray diffraction (XRD) spectrum were calculated and indexed for the first time. The DTA thermograms of CHR powder have been recorded in the temperature range 25–350 °C with different heating rates. The spectra of the infra-red absorption allow characterization of vibration modes for the powder and thin film. The effect of film thickness on the optical properties has been studied in the UV-visible-NIR regions. The films show high transmittance exceeding 0.90 in the NIR region λ > 800 nm. The intensity of the absorption peaks for λ < 800 nm are enhanced as the film thickness increase. The absorption bands are attributed to the (π–π*) and (n–π*) molecular transitions. The optical properties have been analyzed according to the single-oscillator model and the dispersion energy parameters as well as the free charge carrier concentration have been determined. The optical energy gap as well as the oscillator strength and electric dipole strength have been calculated.     

Enhanced photosensitivity of InGaZnO-TFT with a CuPc light absorption layer

A copper phthalocyanine (CuPc) organic semiconductor is capped onto an amorphous indium–gallium–zinc-oxide (InGaZnO) thin film transistor (TFT) to enhance the photosensitivity of InGaZnO-TFT. The CuPc organic semiconductor is served as a light absorption layer and forms a p–n junction with the InGaZnO film. After 60 s white light illumination, light responsivity (R) of InGaZnO-TFT with a CuPc light absorption layer reaches a value of 148.5 A/W at a gate-source voltage (V_GS) of 20 V, which is much larger than that (31.2 A/W) of the conventional InGaZnO-TFT. The results are attributed to the following mechanism. First, a CuPc layer is employed as the light absorption layer. Second, CuPc/InGaZnO p–n junction enables the injection of electron into InGaZnO film. Our results indicate that using CuPc as light absorption layer is an effective approach to improve the photosensitivity of InGaZnO-TFT.