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1.
AlxGa1−xAs LPE growth was studied within the temperature range of 930–900°C with Al concentrations in solutions from 0.04 to 2.4 at.%. AlAs concentration in layers has been shown to grow with the cooling rate increase of solution. Interface and volume nucleation parameter dependence of Ki and Kv and formation time tf on Al concentration in Ga solution have been found. Addition of Al to Ga solution increases critical values of As supersaturation (supercooling) and, as a result, increase in thickness of AlxGa1−xAs layers compared with GaAs layers have been determined in spite of As concentration lowering in Ga solution.  相似文献   

2.
It is shown that the In–Ga–P melt which is prepared by contacting with the GaP seed becomes supersaturated in reality. Some peculiarities of InxGa1–xP/GaAs films formation at quasi-equilibrium conditions are described. It is observed that the saturated In–Ga–P melt dissolves the GaAs substrate when isothermally contacting if the InxGa1–xP equilibrium solid has the lattice parameter less than that of GaAs. As a result some InGaAsp deposit arises on the substrate. This phenomenon takes place if the In–Ga–P melt is just supercooled. This instability of the liquid-solid interface is explained on the basis of the relaxation theory of non-equilibrium liquid-solid contact which has been created by the author in previous papers.  相似文献   

3.
Doping of GaAs and Ga1−xAlxAs with Zn in the LPE process was studied by a radioanalytical method. It is found that Zn diffuses from the Ga-(Al)-As-Zn-solution into the n-GaAs substrate before epitaxial growth starts. This “pre-diffusion” and the following diffusion of Zn out of the epitaxial layer into the substrate results in three regions with distinct Zn-graduation in the vicinity of the pn-junction. There are no striking differences for GaAs/GaAs and Ga1−xAlxAs/GaAs structures. The Zn concentration in GaAs epitaxial layers decreases exponentially from the substrate up to the layer surface. From this profile the temperature dependence of the Zn segregation coefficient is calculated. At 900°C a value keff = 5,2 · 10−2 is found. The doping profile in Ga1−xAl/As layers is more complex. It is influenced by the changings of temperature during the growth of the layer and by the nonuniform Aldistribution over the layer thickness.  相似文献   

4.
Both surface and bulk nonuniformities in AlxGa1−xAs solid solution compositions were determined by surface radiography of epitaxial AlxGa1−xAs GaAs hetero-junctions with diffused radioactive Zn65 atoms.  相似文献   

5.
The paper deals with the influence of thermal boundary conditions and thermophysical material properties on velocity configurations in Bridgman arrangements. Numerical simulations are presented for (Bi1—xSbx)2Te3 melts as a representative for semiconductor melts of low Prandtl numbers. Based on two characteristic temperature profiles, results have been calculated for 2D-axisymmetric and 3D Bridgman configurations applying the FIDAPTM FEM code using pseudo-steady-state conditions with a constant growth rate. For simulation close to real growth conditions the model used includes real geometry parameters as well as the experimentally measured temperature distribution at the outer ampoule surface and temperature depending material properties. The calculations show significant variations in the flow configuration and the resulting radial inhomogeneity of the grown crystal depending on the thermal processing parameters used.  相似文献   

6.
In this paper, the role of seed rotation on the characteristics of the two‐dimensional temperature and flow field in the oxide Czochralski crystal growth system has been studied numerically for the seeding process. Based on the finite element method, a set of two‐dimensional quasi‐steady state numerical simulations were carried out to analyze the seed‐melt interface shape and heat transfer mechanism in a Czochralski furnace with different seed rotation rates: ωseed = 5‐30 rpm. The results presented here demonstrate the important role played by the seed rotation for influencing the shape of the seed‐melt interface during the seeding process. The seed‐melt interface shape is quite sensitive to the convective heat transfer in the melt and gaseous domain. When the local flow close to the seed‐melt interface is formed mainly due to the natural convection and the Marangoni effect, the interface becomes convex towards the melt. When the local flow under the seed‐melt interface is of forced convection flow type (seed rotation), the interface becomes more concave towards the melt as the seed rotation rate (ωseed) is increased. A linear variation of the interface deflection with respect to the seed rotation rate has been found, too. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

7.
The initial stages of growth of GaAs–InGaAsPvar–InxGa1−xAs heterostructures (x = 0.1 and 0.17) were investigated for the equilibrium-cooling method of LPE growth. Similar investigations were carried out for GaAs–InGaAsPvar–In0.05Ga0.95As heterocompositions, but for the step-cooling technique. The scheme of growing of In0.17Ga0.83As films of GaAs substrates with several intermediate buffler InGaAsPvar layers is represented. These heterostructures were shown to have less than 106 cm−2 dislocation density on the overall area of the film (> 2 cm2).  相似文献   

8.
The structural properties of multiplayer AlxGa1−x As/GaAs/AlxGa1−x As systems (x ≈ 0.2) grown on GaAs(001) substrates are studied by the methods of double-crystal X-ray diffractometry and reflectometry. The depth profiles of deformation, amorphization, and density of the layers are obtained. It is shown that despite small differences (5–7%) in the densities of the AlxGa1−x As layers and the substrate and the small thickness of the AlAs layer (1–2 nm) separating the GaAs quantum well, it is possible to reconstruct the heterostructure model by the method of X-ray reflectometry and to determine the thickness of the transitional layers at a resolution of 0.1–0.2 nm. It is also established that the reflectometry data obtained complement the X-ray diffraction data considerably and allow one to estimate the roughness and the character of the aluminum distribution at the interfaces. __________ Translated from Kristallografiya, Vol. 50, No. 5, 2005, pp. 801–812. Original Russian Text Copyright ? 2005 by Lomov, Sutyrin, Prokhorov, Galiev, Khabarov, Chuev, Imamov.  相似文献   

9.
The multiple layer structure nGaAs(n Ga1–xInxAs) p Ga1–xInxAs (0 ≦ × ≦ 0.18) was realized by liquid phase epitaxy from In–Ga–As-melts on (111)-oriented GaAs substrates. The InAs-content of the mixed crystal layers was found to be dominating for crystal perfection and growth rate. The cathodoluminescence spectra of p-and n-type Ga1–xInxAs and spectral distribution of the electroluminescence from pn-junctions were measured at T = 77 K and 300 K. The external quantum efficiency wa found to have a maximum for diodes with x ≈ ≈ 0.006. This is caused by the decrease of the optical absorption with increasing x and increasing dislocation density on the other hand.  相似文献   

10.
The dependence of the GaxIn1−xAs alloy composition as a function of the experimental input variables is calculated for a growth system using AsCl3 and solid GaAs and InAs sources. The results are similar to those earlier obtained for growth in the hydride system. Additional AsCl3 introduced downstream the source regions shifts the alloy composition towards higher GaAs content.  相似文献   

11.
采用坩埚下降法生长了LED用硅掺杂<511>取向的GaAs晶体.选用带籽最槽的PBN坩埚作为生长容器,密封在石英安瓶中以防止生长过程中As蒸汽挥发.研究了掺杂工艺、固液界面形貌和生长缺陷.结果表明:孪晶化是硅掺杂GaAs晶体生长的主要问题.探讨了孪晶形成机理,优化了生长工艺,成功获得了直径2英寸高质量的硅掺杂GaAs晶体,双摇摆曲线显示所得晶体的FWHM为40 arcsec.  相似文献   

12.
GaAs, InAs and Ga1?xInxAs layers were grown by chemical beam epitaxy (CBE) using triethylgallium, trimethylindium and tertiarybutylarsine as precursors for Ga, In and As, respectively. The growth rate during the homoepitaxial growth of GaAs and InAs, deduced from the frequency of reflection high-energy electron diffraction intensity oscillations, was used to calibrate the incorporation rates for the III elements. The In content of the Ga1?xInxAs layers was measured by Rutherford backscattering spectrometry and compared with the value predicted from the above calibration data; while the measured In mole fraction is close to the predicted value for the samples grown for low In to Ga flux ratios (x<0.2), the In incorporation is enhanced for larger values of this ratio. The results obtained on layers grown at different substrate temperatures show that In mole fraction is almost constant at growth temperatures in the range 400–500 °C, but a strong dependence on the substrate temperature has been found outside this range. The above results, not observed for samples grown by solid source molecular beam epitaxy, indicate that some interaction between Ga and In precursors at the sample surface could take place during the growth by CBE.  相似文献   

13.
Raman scattering measurements have been performed in Ga1–x Mnx As crystals prepared by Mn ions implantation, deposition, and post‐annealing. The Raman spectrum measured from the implanted surface of the sample shows some weak phonon modes in addition to GaAs‐like phonon modes, where the GaAs‐like LO and TO phonons are found to be shifted by approximately 4 and 2 cm‐1, respectively, in the lower frequency direction compared to those observed from the unimplanted surface of the sample. The weak vibrational modes observed are assigned to hausmannite Mn3O4 like. The coupled LO‐phonon plasmon mode (CLOPM), and defects and As related vibrational modes caused by Mn ions implantation, deposition, and post‐annealing are also observed. The compositional dependence of GaAs‐like LO phonon frequency is developed for strained and unstrained conditions and then using the observed LOGaAs peak, the Mn composition is evaluated to be 0.034. Furthermore, by analyzing the intensity of CLOPM and unscreened LOGaAs phonon mode, the hole density is evaluated to be 1.84×1018 cm‐3. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

14.
Hg1−xCdxTe layers on CdTe substrates were grown from Te-rich melt solutions by a vertical dipping technique using a special quasi-closed system with ground-glass sealing. Results are good reproducibilities of the electrical properties after annealing in Hg-rich atmosphere (p77 ≈ 2 · 1016 cm−3 μ77 ≈ 500 cm2 V−1 s−1) and of the x-value, respectively. A horizontal position of the substrate downwards to the melt solution yields, in difference to a vertical one, to homogeneous layer thicknesses. Short meltback steps before growth leads to sharper profiles of composition.  相似文献   

15.
A method is described to measure composition profiles of layer systems on substrates by electron probe microanalysis with an improved effective spatial resolution down to 0.1 μm. The resolution problem in microanalysis of angle lapped layers and the related experimental problems are discussed and examples of composition profile measurements at GaAs-AlxGa1–xAs double-heterostructures are presented.  相似文献   

16.
The method of liquid epitaxial growth of GaAs/AlGaAs/GaAs heterostructures when the change of solutions occurs due to pushing off one melt by another is discussed. It has been shown theoretically and experimentally that the initial stages of film growth after the change of the binary Ga As melt on the ternary Al Ga As melt differ from that when the Ga As solution pushes off the Al Ga As liquid. The difference is caused by the inequality of the diffusion coefficients of As and Al in a multicomponent Al Ga As liquid (DAl > DAs). As a result, the growth of an AlGaAs film begins immediately in the case when the Al Ga As solution pushes off the Ga As liquid but in the opposite case the dissolution of an underlying AlGaAs solid is unavoidable and depends little on degree of a saturation of the Ga As washing solution. These peculiarities must be taken into account in discussions of abruptness and other properties of LPE-grown AlGaAs/GaAs and GaAs/AlGaAs heterojunctions.  相似文献   

17.
18.
By annealing Pb1−xSnxTe and PbTe isothermally in a quartz ampoule Sn diffused from Pb1−xSnxTe into PbTe. The profiles obtained have been investigated by means of an electron beam microanalyser, and the coefficients of diffusion have been determined at various temperatures. The diffusion of Sn can be explained by the expressions: DPbSnTe = 1.5 · 10−1 exp (−1.8 eV/kT) cm2 s−1 (0,14 < x < 0,18) DPbTe = 5,5 · 10−4 exp (−1.5 eV/kT) cm2 s−1. N-type layers are observed at the surface of Pb1−xSnxTe specimens.  相似文献   

19.
Mixed crystals of ammonium dihydrogen phosphate and potassium dihydrogen phosphate K1‐x(NH4)x H2PO4 were grown from aqueous solutions with x = 0.06, 0.09, 0.15, 0.32, 0.42, 0.51, 0.63, 0.70, 0.76, 0.78, 0.84, 0.88, 0.89 and 0.91. The crystal composition that differs from solution was estimated by X‐ray method. Morphology of the crystals changes from tetragonal prism to needles when the incorporation of either of the two components into the other; which also affects the growth rate along the prominent growth directions significantly. Growth along the [001] decreases initially with composition and reached the maximum when x = 0.5; whereas growth along the [100] always showed a decreasing trend with composition and attained a minimum value when x = 0.5. Crystal length along the [001] and [100] and aspect ratio are also compositional dependent. Unit cell parameters determined by X‐ray powder and single crystal analyses revealed that the ‘a ’ parameter shows only a small and linear variation but the ‘c ’ parameter changes significantly with ADP incorporation because of the difference in the effective ionic radius of K+ and NH4+ ions and also the possibility of NH4+ ion to form two different kinds of hydrogen bonds in the system. The existence of a pseudo‐cubic cell at the mixing composition x = 0.78 was also revealed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

20.
The pseudoternary cut Sn GaAs GaP of the quarternary system Ga As P Sn has been investigated in a temperature range from 860 to 1200°C. The calculation based on Vieland's method by use of Darken's quadratic formalism. A comparision between the solvents tin and gallium shows a higher solubility in tin for the mixed crystal GaxPAs1−x and a stronger variation of the composition along the growth direction.  相似文献   

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