Growth and characterization of La3Ga5.5Ta0.5O14 crystal

La₃Ga_5.5Ta_0.5O₁₄ (LGT) crystal was grown by using the Czochralski method. The as‐grown crystal is transparent, free from inclusions and with no cracks. Specific heat, thermal expansion, dielectric constants, transmission spectrum and optical damage threshold of LGT have been measured, and the results show general properties of LGT are similar to that of La₃Ga₅SiO₁₄ (LGS) crystal. The experiment to research the Q‐switch properties of LGT has been performed and the results show LGT possesses smaller electrooptic coefficients than that of LGS and may not be an ideal material used as a Q‐switch. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of Starting Melt Composition on Crystal Growth of La3Nb0.5Ga5.5O14

Single crystals of La₃Nb_0.5Ga_5.5O₁₄ were grown from different starting melt compositions by the Czochralski technique. The effect of the melt composition on crystal quality was examined by measuring the variation of chemical composition and lattice parameters along the growth axis. The existence of a solid solution range of La₃Nb_0.5Ga_5.5O₁₄ is discussed using X-ray crystal structure analysis.     

Effects of Er3+ doping concentration and calcination on fluorescence properties of La3Ga5.5Nb0.5O14 nanocrystals

The effects of Er³⁺ doping concentration and calcination were examined on the fluorescence properties of La₃Ga_5.5Nb_0.5O₁₄ (Er:LGN) nanoparticles for the first time. High quality Er:LGN nanoparticles were synthesized by sol‐gel method. The room temperature fluorescence spectra showed a green emission, which can be attributed to ²H_11/2‐⁴I_15/2 and ⁴S_3/2‐⁴I_15/2 transition. The relationship between the relative emission intensity and the doping concentration was investigated. The maximum of the Er³⁺ doping concentration in LGN nanopowders is 2.0%. The fluorescent lifetime of 2.0% Er:LGN nanoparticles is 1.45ns. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Saturation Behaviour of In – Ga – As Melts and Growth of In.53Ga.47As Lattice-matched to (001) InP Substrates

This paper presents the saturation behaviour of In – Ga – As melts with monocrystalline GaAs. The coulometric As-analysis confirmed that the source-seed-technique produces In – Ga – As melts of defined compositions. The growth results of the step cooling technique applying both the source-seed technique and the single phase melts are compared.     

一种生长Ga3PO7晶体的新助熔剂体系

在MoO3-K2CO3体系中,借助于自发成核法,与MoO3-Li2CO3体系进行对照,找到一个新的适合Ga3PO7晶体生长的助熔剂体系;在新助熔剂体系下,采用顶部籽晶法生长出厘米级Ga3PO7晶体,晶体尺寸为30 mm×21 mm×9 mm;对其基本性质进行表征,在测试范围内所生长的Ga3PO7晶体透过率均在80;以上,具有高的透过率和宽的透过范围.     

形貌可控纳米ZnO的制备及其光学性能研究

以乙酸锌、氢氧化钠和柠檬酸钠为原料,利用水热法成功地实现了形貌可控纳米氧化锌(ZnO)粉体的制备,系统地研究了柠檬酸钠浓度、生长温度和后处理温度对纳米ZnO的形貌、光致发光和透过率等性能的影响.结果表明:随着柠檬酸钠的增加,纳米ZnO的形貌由短棒状到颗粒状再转变为花瓣状;降低生长温度,纳米ZnO的形貌从颗粒状转变为六方柱状;提高后处理温度,纳米ZnO的团聚方式由包覆式变为环绕式.室温光致发光(PL)谱显示,样品在387 nm左右处具有较强紫光发光峰、538 nm左右处具有较弱的绿光发光带.紫外-可见(UV-Vis)谱表明,在紫外光区,透过率均随波长的减小而降低;在可见光区,纳米ZnO的透过率随形貌由六方柱状构成的包覆式结构经短棒状转变到颗粒状、花瓣状、六方柱状构成的环绕式结构的转化而呈现降低的趋势.     

水热法制备钛酸铋钠粉体及其生长机理研究

以钛酸四丁酯Ti(OC4H9)4和五水硝酸铋Bi(NO3)3·5H2O为原料,NaOH为矿化剂,通过水热法制备钛酸铋钠(Na0.5Bi0.5TiO3)粉体.通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)对反应制备的粉体进行物相分析.结果表明,反应温度、反应时间及矿化剂浓度均是影响钛酸铋钠粉体制备的关键因素.利用JMA方程对其进行动力学计算分析,结果表明,在反应温度为120～ 180℃时,NBT颗粒的Avrami指数n随温度的升高而减小,而反应速率k则相反,反应活化能Ea为50.14 kJ·mol-1.     

立方氮化硼生长界面形貌及相结构表征

采用Li3N和hBN为原料,在静态高温高压条件下合成出大颗粒cBN单晶.利用扫描电镜(SEM)、高分辨透射电镜(HRTEM)对合成块断面、大颗粒cBN单晶形貌及其周围物相进行了表征.结果表明:在大颗粒cBN单晶周围主要存在hBN、cBN及Li3BN2等物相.HRTEM在大颗粒单晶周围发现了纳米尺寸的cBN微颗粒,并发现该微颗粒处在Li3BN2物相包裹中.由此可以推测,高温高压状态下,hBN与Li3N发生共熔反应生成Li3BN2,而Li3BN2作为触媒中间相促使cBN的形成.同时结合SEM结果分析表明,一旦cBN微颗粒形成,在随后的生长过程中,cBN在Li3BN2熔体中以扩散的方式进行台阶生长,从而形成宏观可见的cBN单晶.     

加氮对直流电弧等离子体喷射金刚石膜生长、形貌和质量的影响

利用直流等离子体喷射化学气相沉积法制备掺氮的金刚石厚膜.本文研究了在甲烷/氩气/氢气中加入氮气对金刚石膜生长、形貌和质量的影响.反应气体的比例由质量流量计控制,在固定氢气(5000sccm)、氩气(3000sccm)、甲烷(100sccm)流量的情况下改变氮气的流量,即反应气体中氮原子和碳原子的变化比例(N/ C比)范围是从0.06到0.68.同时金刚石膜在固定的腔体压力(4kPa)和衬底温度(800℃)下生长.金刚石膜用扫描电镜(SEM)、拉曼谱和X射线衍射表征.结果表明,氮气在反应气体中的大量加入对直流等离子体喷射制备金刚石膜的形貌、生长速率、晶体取向、成核密度等有非常显著的影响.     

Electro‐optic,Piezoelectric and Dielectric Properties of Langasite (La3Ga5SiO14), Langanite (La3Ga5.5Nb0.5O14) and Langataite (La3Ga5.5Ta0.5O14)

Refractive indices were determined of single crystals of La₃Ga₅SiO₁₄ (langasite, LGS), La₃Ga_5.5Nb_0.5O₁₄ (langanite, LGN) and La₃Ga_5.5Ta_0.5O₁₄ (langataite, LGT) in the wavelength region between 0.36 μm and 2.33 μm. While phase‐matched optical second harmonic generation is not possible in LGS it occurs in the isotypic compounds LGN and LGT. Temperature‐dependent examination of the dielectric properties of LGS up to 600 °C showed anomalous behaviour. For all three substances the electro‐optic [r^σ_ijk] (“unclamped”) and the piezoelectric [d_ijk ] tensors were determined at room temperature. In addition, the temperature‐dependence of these properties was studied for LGS between –200 °C and +200 °C by a Jamin interferometer in combination with a modified Sénarmont compensator.     

硅晶体生长固液界面形貌研究

结合杰克逊界面理论、分子动力学模拟(MD)和密度泛函理论(DFT),对硅晶体(100)和(111)面生长过程中固液界面形貌进行研究,包括界面自由能变化、结构变化和生长位置吸附能等。通过杰克逊界面理论计算,发现(100)界面晶相原子和流体相原子在表面各占约50%时吉布斯自由能达到极小值,而(111)界面在表面占比约0%或100%时达到极小值,说明当热力学平衡时,(100)面趋向于粗糙面,(111)面趋向于光滑面;分子动力学模拟显示,随着生长的进行,初始光滑的固液界面在(100)面上会逐渐转变为粗糙界面,而(111)面则始终保持光滑界面生长;且在生长过程中,(100)面的生长速率明显高于(111)面,因为(100)面始终为粗糙面生长;DFT计算发现,(100)面上的所有生长位置吸附能接近,可以实现连续生长,(111)面吸附能则存在明显的差值,生长原子需要吸附在台阶处才能进行层状生长。     

ZnWO4单晶衬底上ZnO薄膜的晶核发育与形貌分析

ZnWO4单晶的a晶面与氧化锌c晶面晶格匹配很好,是制备氧化锌薄膜的优良衬底.本文采用溶胶-凝胶法在ZnWO4单晶衬底上制备出透明的ZnO薄膜.通过光学显微镜对薄膜晶核发育过程和形貌进行了详细的分析.实验结果表明:在结晶刚开始,系统将经历成核--长大的过程,随着生长过程的进行,在主晶轴上(一次轴)上又长出二次轴、三次轴等等,最后逐渐形成树枝状晶核.由于ZnO晶核是在非平衡条件下生长的,故在晶核发育过程中又出现了三种不同的生长形态--成核生长、枝晶生长和分形生长.     

C60膜上金刚石的成核与生长形貌研究

本文研究了HFCVD系统中覆盖有C60膜的Si(100)衬底上金刚石的成核与形貌特征.结果表明,C60能大幅度提高金刚石成核密度;C60氢化预处理能大幅度促进金刚石成核,但要合理控制CH4的浓度和预处理时间;随衬底温度的升高,金刚石晶粒由球状变为菜花状聚晶.     

Space-Charge-Limited Current Effects in p-Type CuIn0.8Ga0.2Se2/In Schottky Diodes

Schottky diodes, fabricated by local in diffusion of indium onto p-type single crystals of CuIn_0.8Ga_0.2Se₂ have been shown to exhibit space-charge-limited current effects under forward bias. Two regions are clearly observed in the current-voltage characteristics of the device; the first one associated with the saturation-velocity regime and the second region that corresponds to the ballistic regime with a V^3/2 dependence (Child-Langmuir law). The observed characteristic was used to calculate the semiconductor potential (E_i ≈︂ 0.15 eV). By means of photovoltaic effects the barrier height (φ_B ≈︂ 0.74 eV) and the ideality factor (n = 1.7) of the diode were also obtained.     

Structural study of the semimagnetic semiconductor Zn0.5Mn0.5In2Te4

The semimagnetic semiconductor alloy Zn_0.5Mn_0.5In₂Te₄ was refined from an X‐ray powder diffraction pattern using the Rietveld method. This compound crystallizes in the space group I42m (Nº 121), Z = 2, with unit cell parameters a = 6.1738(1) Å, c = 12.3572(4) Å, V = 471.00(2) Å3, c / a = 2.00. This material crystallizes in a stannite‐type structure. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

NaCo2O4晶体的生长,形貌和生长机理研究（英文）

采用自发成核方法,以NaCl-Na2CO3为助熔剂,生长了毫米级的NaCo2O4晶体。通过X射线衍射对晶体作了表征。利用扫描电子显微镜和原子力显微镜研究了晶体的形貌和生长机理。结果表明:所得晶体是NaCo2O4,属于六方晶系,晶胞参数:a=b=0.2842 nm,c=1.0894 nm,V=0.0761997 nm3。NaCo2O4晶体是沿c轴层状生长的,同时从阴离子配位多面体的角度分析了晶体的形貌。     

Crystal structure of La3Nb0.5Ga5.5O14 at 20 K

The atomic structure of La₃Nb_0.5Ga_5.5O₁₄ single crystals (space group P321, R = 2.21%, R _w = 2.31%) at 20 K was determined using X-ray diffraction. A comparative analysis of the structural characteristics determined at temperatures of 293 and 20 K did not reveal a noticeable redistribution of bond valences that could be considered precursors of a possible phase transition accompanied by the reduction of the symmetry of the crystal. The assumption was made that the anomalous behavior of the permittivity e ₃₃ of the La₃Nb_0.5Ga_5.5O₁₄ single crystals is associated with the decrease in the possible relative displacements of the Ga(1) and Nb atoms occupying the cation position with point symmetry 32 in a 1: 1 ratio.     

溶胶-凝胶法制备Na0.5Bi0.5TiO3-K0.5Bi0.5TiO3体系无铅压电陶瓷的研究

采用溶胶-凝胶法制备(1-x)Na0.5Bi0.5 TiO3-xK0.5Bi0.5TiO3体系无铅压电陶瓷.XRD分析表明,用溶胶-凝胶法可以在650℃下合成具有钙钛矿结构的(1-x)Na0.5Bi0.5TiO3-xK0.5Bi0.5TiO3粉体,且在x=0.18～0.30之间存在三方-四方准同型相界(MPB).陶瓷的压电性能参数表明,该体系在MPB组成范围内具有最佳的压电性能:x=0.30时,压电常数d33达到最大值(d33=150 Pc·N-1),平面机电耦合系数kp与介电常数εH33T/ε0均在x=0.26时达到最大值,分别为36.7;和1107.     

In和过渡金属离子共掺杂对ZnO晶体形貌的影响

采用水热法,KOH作矿化剂,在ZnO前驱物中添加适量的CoCl2·6H2O,FeCl2·4 H2O,NiCl2·6H2O,In2O3,其中Co:In:Zn,Fe:In:Zn,Ni:In:Zn 分别为5:1:100,5:1:100,3:1:100.3 mol/L KOH作矿化剂,温度430 ℃,填充度35;,反应24 h,制备了In和过渡族金属离子共掺的ZnO晶体.结果表明,掺杂In2O3时,所合成的过渡族金属离子掺杂的ZnO晶体均呈现六角片状晶体,晶体形貌规则,表面光滑,直径为5～10 μm.和未掺杂In的晶体相比,掺杂In后,晶体c轴极性生长速度得到明显的控制,a、b轴方向生长速度提高,大面积显露+c{0001}、负极面-c{0001}面,另外还显露正锥面+p{1011}、负锥面-p{101-1-}.     

Neutron and X-ray diffraction study of superstructure and localized magnetic moments in Cu0.5Fe0.5Cr2S4 and Cu0.5In0.5Cr2S4 compounds

The superstructure parameters for the Cu_0.5Fe_0.5Cr₂S₄ and Cu_0.5In_0.5Cr₂S₄ compounds have been determined by neutron and X-ray diffraction. The localized magnetic moments in different sublattices measured for Cu_0.5Fe_0.5Cr₂S₄ are equal to 3.06 ± 0.17 μB for Fe³⁺ ions in the A-site and 2.76 ± 0.22 μB for Cr³⁺ ions in the B-site (Cu⁺ possess no magnetic moment), which are much less than the magnetic moments for the ions in the purely ionic state.