Study on K(DxH1‐x)2PO4 Crystals: Growth Habit,Optical Properties and their Improvement by Thermal‐Conditioning

Phosphite, which often exists in growth solutions obtained directly from commercial P₂O₅ , was found to have significant inhibiting effects on the growth of pyramidal face of KDP crystals. K(D_xH_1‐x)₂PO₄ (referred to as DKDP) crystals with different deuterium fraction x were grown and the optical performances were investigated. The absorption coefficients at 1.05 μm decreases monotonically with the increase of x. The transmission threshold shift from 1.65μm at x=0 to 2.10 μm at x=0.96. The high temperature phase transition temperature and latent heat were measured using the method of differential scanning calorimetry (DSC). Thermal conditioning experiments were carried out at 180°C and 140°C for KDP and DKDP, respectively. After conditioning, a different degree of improvement was observed in the optical homogeneity of the samples, while the laser damage threshold and light absorption coefficient showed no significant change.     

Growth and characterization of photorefractive Bi12TiO20 single crystals

Photorefractive Bi₁₂TiO₂₀ single crystals of high optical quality were grown in a resistive heating furnace from high temperature nonstoichiometric (10:1) solutions of Bi₂O₃ and TiO₂ at pulling rates 0.3–0.8 mm/h at rotation 20–30 rpm along the <001> and <011> axis. Powder X-ray analysis, Laue method, and electron-probe microanalysis were used for characterization. BTO crystals have the bcc structure of sillenite type with a₀ = 10.178(8) Å. The chemical composition of the crystals can be written down as Bi_{12.1 ± 0.2}Tio_{0.96 ± 0.09}O_20.1. Natural optical activity ρ of BTO crystals is 6.3 ± 0.2 deg/mm at λ = 0.633 μm and 11.9 ± 0.2 deg/mm at λ = 0.5145 μm, optical absorption coefficient α = 0.42 ± 0.04 cm⁻¹ at λ = 0.633 μm and linear electro-optic coefficient r₄₁ = r₅₂ = r₆₃ = 5.3 pm/V. Fanning effect in the “fiber-like” BTO sample was studied and double phase conjugation with conversion efficiency up to 8% was observed in a wide range of incidence angles of the pump at λ = 0.633 μm for 2 × 3 mW input light power.     

Growth of big single crystals of a new magnetic superconducting double perovskite Ba2PrRu1–xCuxO6

Single crystals of Ba₂PrRu_1–xCu_xO₆ with x = 0 to 0.2, have been grown from high temperature solutions of a mixture of PbO‐PbF₂ in the temperature range 1100–1200 °C. Thin crystals with mostly a hexagonal and triangular plate like habit measuring up to 1–2 mm across and 0.1–0.2 mm thick were obtained. The size, quality and morphology of the crystals were improved by varying the solution volume as well as additives like B₂O₃. Large crystals measuring up to 3 mm across and 0.3 to 0.5 mm thick were obtained with 5–7 wt% solute concentration and 0.51 wt% of B₂O₃. The ZFC curves exhibit a spin glass like behavior with x = 0 and a superconducting transition at 8 to 11 K depending on x = 0.05 to 0.1. The transition was also influenced by the growth temperature and post growth annealing. Powder x‐ray diffraction, EDS and Raman spectroscopic measurements confirm the presence of Cu in the crystals. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth of big single crystals of Sr2YRu1‐xCuxO6 from high temperature solutions

Single crystals of Sr₂YRu_1‐xCu_xO₆ (x = 0 ‐ 0.4) have been grown from PbO‐PbF₂ based solutions in the temperature range 1150 – 1350°C. A silicon carbide heating element furnace (with a recrystallized alumina tube lining) in a vertical configuration was used to grow the crystals in platinum crucibles. Conditions for the stable growth of big crystals have been investigated. The morphology of the crystals containing Cu was found to change from octahedral to cube octahedral as the growth temperature is increased from 1150 to 1350°C. Crystals measuring up to 4.5 mm across and 2.5 mm thick have been grown from 1250°C. The incorporation of Cu into the crystals was ascertained by EDS and x‐ray diffraction analysis. A diamagnetic transition which increased in magnitude and temperature with x was observed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Characterization of dislocations in a LiNbO3 single crystal grown by micro pulling down method

LiNbO₃ single crystals grown by the micro pulling down (μ-PD) method have been revealed to be as free of dislocations and subgrain boundaries up to 500 μm in diameter. On the other hand, μ-PD LiNbO₃ single crystals grown along the x-axis in diameter of 800 μm were observed to be dislocated due to the size effect of crystal. The Burgers vectors of dislocations were determined to be [22 01], [101 1], and [01 11] by X-ray topography.     

Optical and electro-optical properties of ZnMgSe single crystals

The optical and electro-optical properties of large-sized (diameter, 20 mm; length, 70 mm) single crystals of Zn_{1 ? x}Mg_xSe (x ～ 0.5) semiconductor solid solutions are investigated. The crystals are grown by the vertical Bridgman-Stockbarger method. It is found that, for ZnMgSe single crystals with a magnesium content up to 25 at. %, the modulus of the difference between the electro-optical coefficients |r₁₃ ? r₃₃| at a wavelength of 0.63 μm is equal to (1.1 ± 0.22) × 10^?12 m/V, which is comparable in order of magnitude to the difference in the electro-optical coefficients for classical hexagonal A^IIB^VI compounds, such as CdS and CdSe. It is shown that single crystals of ZnMgSe solid solutions are promising materials for use in the fabrication of electro-optical modulators, λ/4-and λ/2-wavelength plates, and multifunctional optical elements operating in the range of high-intensity radiation of CO and CO₂ lasers.     

On voids in InxGa1−xSb crystals grown by an ultrasonic- vibration-introduced Czochralski method

The shape and size of voids, and the grown region surrounding a large void were investigated in In_xGa_1–xSb crystals, which were pulled under the introduction of ultrasonic vibrations into the source melt by using a modified Czochralski apparatus. The presence of voids in crystals resulted from (1) atmosphere gas was confined beneath the growth interface of a seed crystal during the seeding procedure, and (2) many bubbles–generated by the cavitation effect due to ultrasonic vibrations–were caught in the growing crystal. Voids were circular, deformed trapezoid, and complex in shape, and were in a range of 20 μm to 3 mm in size. Even in case of a void with the diameter as large as 2 mm, the grown region surrounding it was in the single crystalline state. In this interesting region, the microscopic variation of In concentration and the abrupt change of growth rate were observed.     

Evaporation induced diameter control in fiber crystal growth by micro‐pulling‐down technique: Bi4Ge3O12

Diameter self‐control was established in Bi₄Ge₃O₁₂ fiber crystal growth by micro‐pulling‐down technique. In accordance with Bi₂O₃‐GeO₂ phase diagram, the diameter was controlled due to compensation of solidification with evaporation of volatile Bi₂O₃ self‐flux charged into the crucible with excess. The crucibles had capillary channels of 310 or 650 μm in outer diameter. The crystals up to 400 mm long and 50‐300 μm in diameter were grown at pulling‐down rates of 0.04‐1.00 mm/min. The melt composition and the pulling rate were generally only two parameters determining solidification rate. As a result, crystals with uniform (± 10%) diameter and aspect ratio up to 10⁴ were produced without automation of the process. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth,Characterization and Non-Critical Phase-Matching of Niobium-Doped KTP Crystals

A series of niobium doped KTP (Nb: KTP) crystals has been grown. XRD and DTA experiments show that the Nb: KTP crystal structures do not differ from that of KTP (within experimental error) and that the melting points of the crystals increase with increasing Nb content. Synchrotron radiation topography revealed that the main defects of the crystals were growth sector boundaries, growth striations, inclusions and dislocations. Second harmonic generation experiments were performed using a 12.2% Nb:KTP and the d₁₅ and d₂₄ values of csystal were determined to be (3.7 ± 0.4) and (8.3 ± 0.8) × 10⁻⁹ esu, respectively. The relationship between phase-matching angle and Nb content for a 1.064 μm laser was determined and in the case of a 4.0% Nb:KTP crystal, non-critical phase matching was realized.     

Growth and Properties of Trigonal Aluminium Gallium Orthophosphate Single Crystals Al1-xGaxPO4

The new piezoelectric solid solution aluminium gallium orthophosphate single crystals have been successfully developed for the first time in our laboratory by hydrothermal method. It has been demonstrated that these crystals are homogeneous, and isomorphous with AIPO₄ and GaPO₄. The solid solution crystals Al_1-xGa_xPO₄ are easy to grown and have better optical quality than those of AlPO₄ crystals under the same conditions. A phase transition temperature T_α-β is 587 ± 3 °C for x = 0.12. Cell parameters, and elastic, piezoelectric, and dielectric constants are given.     

Effect of Ampoule Rotation on Growth of InGaAs Ternary Bulk Crystals from Solution

In_xGa_1-xAs (x = 0.045) ternary bulk crystals were grown on GaAs seeds from an In–Ga–As solution by the temperature-difference method modified to rotate a growth ampoule. The effect of ampoule rotation on the profiles of the composition and the growth rate were investigated. The In compositional profiles were uniform irrespective of the ampoule rotation. On the other hand, the growth rate at the center of the crystal increased from 40 μm/h at 0 rpm to 55 μm/h at 100 rpm. The profile of growth rate changed from concave to convex toward the seed due to the ampoule rotation. Flow patterns and compositional profiles in the solution were simulated by solving four equations: Navier-Stokes, continuity, energy, and solute diffusion. The ampoule rotation enhanced the transportation of As component from the GaAs feed toward the seed at the central region in the solution. This led to the increase of the growth rate.     

Growth of single crystals of the high-pressure ɛ-FeOOH phase

Single crystals of the high-pressure ?-FeOOH phase are grown from an aqueous solution at p = 7 GPa in the temperature range 580–350°C. Dark brown crystals of prismatic habit are obtained that have characteristic sizes of 0.1 × 0.1 × 0.7 mm. A region of the t-x phase diagram of the H₂O-Fe₂O₃ system at p = 7 GPa is constructed on the basis of the data obtained.     

Growth of dysprosium garnet single crystals with spiral shape using Czochralski technique

The growth conditions of dysprosium garnets single crystals, to obtain a long and good spiral shape crystal, have been investigated using the conventional Czochralski technique along the [111] pulling direction. The good spiral shape of Dy₃Ga₅O₁₂ single crystal with 40 mm in length is grown with its spiral pitch and spiral diameter of 20 mm and 15 mm, respectively.     

A new optical medium—Cd<Subscript>0.75</Subscript>Sr<Subscript>0.25</Subscript>F<Subscript>2</Subscript> single crystals

For the first time, single crystals of the Cd_0.75Sr_0.25F₂ solid solution with the fluorite structure are grown from melt by the Bridgman-Stockbarger method. The composition of these single crystals corresponds to the composition congruently melting at the minimum point on the phase diagram. The maximum diameter of the crystal is 50 mm; the maximum height is 30 mm. The vickers microhardness of the semitransparent crystals equals 191 ± 43 kg/mm². The transmission cutoff in the IR range is ～10 μm.     

Growth and thermal studies on pure ADP,KDP and mixed K1‐x(NH4)xH2PO4 crystals

The investigations on the formation of mixed crystals of ammonium dihydrogen orthophosphate (ADP) and potassium dihydrogen orthophosphate (KDP) i.e. potassium ammonium dihydrogen phosphate, K_1‐x(NH₄)_xH₂PO₄ have been presented in this paper. Pure and mixed crystals of ADP and KDP have been grown by slow evaporation technique from the supersaturated solution at an ambient temperature 26±1 °C for ammonium concentration x in the range 0.0 ≤ x ≤ 1.0 in the case of mixed crystals. Crystal compositions were determined by flame atomic absorption spectroscopy and chemical analysis. The results of the X‐ray analysis of the grown crystals are also reported. Thermogravimetric analysis (TGA) and differential thermal analysis (DTA) were used to study the kinetic process of dehydration and the high temperature phase behaviour. DTA showed the distinct thermal events attributed to dehydration of ADP, KDP and K_1‐x(NH₄)_xH₂PO₄. The results of thermal analysis and chemical analysis are consistent with each other. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optical properties of non‐centrosymmetric mixed crystals K2(La1‐x Cex)(NO3)5 · 2 H2O (x = 0.0 – 1.0)

Large single crystals of optical quality of the non‐centrosymmetric orthorhombic potassium rare earth nitrate mixed crystals K₂(La_1–x Ce_x)(NO₃)₅ · 2 H₂O were grown at 38 °C from diluted HNO₃. For crystals with x = 0.0, 0.19, 0.38 and 0.66 refractive indices and their dispersion were determined with an error less than 1 · 10^–4 in the wavelength range 0.404 – 1.083 μm by the prism method. Phase matching conditions for collinear SHG frequency conversion were analysed in detail, including calculation of the effective nonlinear optical susceptibility. By an appropriate choice of the fraction x of cerium the mixed crystals K₂(La_1–x Ce_x)(NO₃)₅ · 2 H₂O allow an adjustment of non‐critical type I phase matching conditions to a desired wavelength of the fundamental wave within the range 1.055(4) – 1.107(6) μm. Non‐critical type II phase matching can be tuned in the wavelength range 0.949(2) – 0.931(2) μm. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of the VPE parameters on the epitaxial film properties for the (Pb1−xSnx)1+yTe1−y system

Epitaxial films have been produced for 0 ? x ? 1 by steps of 0.1. The growth rate, crystalline quality, carrier concentration and composition have been measured as a function of source, substrate and Te₂ source temperature. The growth rate is adjustable between 0.1 and 36 μm h^-1 and the films have smooth and shiny surfaces. The crystalline quality, conduction type and carrier concentration is mainly determined by the Te₂ pressure. It is possible to choose the type and the carrier concentration in the stable region for a source composition x ? 0.2. The films are always p-type if x ? 0.3. The composition of the films is varied by the source and by the substrate temperature. It is possible to vary the film composition compared to the source composition in the range of ±20% by varying the substrate temperature.     

Powder feeder for crystals of large diameter grown by the verneuil technique

To grow crystals of large diameter ( ≈ 50 mm) by the flame fusion process it is necessary to feed powder with a flow rate of ≈ 2 g/min into the gas stream, the grain size being as small as possible. The properties of vertically and horizontally excitated sieves are compared. A sieve arrangement with horizontal and vertical vibration is described, which at a mesh width of 90 μm has a powder flow of up to 5 g/min. The long range constancy was within ± 8%. Sieves with a mesh width < 90 μm can be used if an ultrasonic disintegrator is mounted above the feeder sieve. Sapphire and Mg–Al spinel crystals up to 65 mm in diameter could be grown.     

Growth and dielectric properties of Ta2O5 single crystal by the floating zone method

Large Ta₂O₅ single crystal with high‐dielectric permittivity was successfully grown by floating zone (FZ) method under air atmosphere. The grown crystal that has been obtained was typically about 8 mm in diameter and 90 mm in length. The crystal growth parameters were optimized. The crystal symmetry, characterized by means of X‐ray diffraction (XRD), was found to be tetragonal. The relative permittivity and loss tangent along growth and [001] direction were measured in the temperature range between ‐200 °C and 200 °C, which showed a strong dielectric anisotropy. At a frequency of 1 MHz and 20 °C, the dielectric permittivity along the growth direction and [001] direction are 81.17 and 25.04 respectively. The stabilization of high‐temperature phase can explain the dielectric enhancement.     

Growth behaviour of bulk GaN single crystals grown with various flux ratios using solvent‐thermal method

Bulk GaN single crystals were grown using a solvent‐thermal method. They were grown for 200 h at 600 °C and 800 °C using 8 MPa of N₂ gas and 1–3 mm sized pyramid GaN single crystals. Pure Na, NaN₃ and Ca were used as the flux. The mole fraction of the [flux]/([flux] + [Ga]) was 0.30–0.67. The growth behavior differed according to the flux ratio. The quality of the bulk GaN single crystals was improved by increasing the flux ratio. The bulk GaN single crystals formed by spontaneous nucleation were deposited on the BN crucible wall and bottom during the first step of synthesis. The wurtzite structure of the GaN grown single crystal was confirmed by x‐ray diffration. The chemical composition was analyzed by electron probe microanalysis. The quality and optical properties of the GaN single crystal were examined by Raman spectroscopy and photoluminesence analysis. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)