Highly reproducible large-area and double-sided pulsed laser deposition of HTSC YBCO:Ag thin films for microwave applications

Large-area pulsed laser deposition (PLD) producing high-quality YBa₂Cu₃O_7-x (YBCO) thin films on both sides of R-plane sapphire substrates with CeO₂ buffer layer is used routinely to optimize planar microwave stripline filters for satellite and mobile communication systems. A relatively simple PLD arrangement with fixed laser plume and rotating substrate, with an offset between the laser plume and the center of the substrate is employed to deposit laterally homogeneous 3-inch-diameter Ag-doped YBCO thin films. The YBCO:Ag films are about 250 nm thick and have laterally homogeneous critical current densities of more than 3.5 MA/cm² at 77 K and homogeneous maps of microwave surface resistance R_s of about 40 m Q at 145 GHz and 77 K. The R_s at 8.5 GHz and 77 K, determined in the center position of the YBCO:Ag films, remains constant at about 370 7 Q up to a microwave surface magnetic field of about 10 mT. After experience with more than 700 double-sided 3-inch-diameter films, a high degree of homogeneity and reproducibility of j_c and R_s is reached. The PLD-YBCO:Ag films are suitable for microwave applications envisaged for future communication systems.     

Nanocrystalline growth and diagnostics of TiC and TiB2 hard coatings by pulsed laser deposition

Nanocrystalline coatings of TiC and TiB₂ were grown by pulsed laser deposition on Si(100) and on X155 steel at low substrate temperatures ranging from 40 °C to 650 °C. A pulsed KrF excimer laser was used with the deposition chamber at a base pressure of 10^-6 mbar. The morphology and structure of the films, studied with SEM, XRD, and TEM, showed that nanocrystalline films with a fine morphology of TiC and TiB₂ were deposited with a grain size of 10 nm-70 nm at all substrate temperatures. The growth of the polycrystalline coatings possessed a columnar morphology with a 𘜄¢ preferred orientation. The hardness of the coatings was determined to be 40 GPa and the elastic modulus, 240 GPa. The composition and the kinetics of the plume produced during the pulsed laser deposition of TiC and TiB₂ was studied under film growth conditions. The mass analysis of ions of the ejected material was performed by time-of-flight mass spectroscopy (TOF-MS) and showed the presence of Ti⁺ and C⁺ during TiC ablation and B⁺, B₂⁺, and Ti⁺ during TiB₂ ablation. The kinetic energies (KE) of the ions depended on the laser fluence which was between 0.5 eV and 340 eV. The kinetic energy and the evolution of the plasma was studied with a streak camera. The velocity of the plasma was of the order of 10⁶ cm/sec and was linearly dependent on the energy fluence of the laser. The emission spectroscopy of the plasma plume confirmed the atomic neutral and single excited species of Ti. These results show that coating growth basically occurs by the recombination of the ionic species at the surface of the substrate.     

Spectral Hole-Burning of Eu^3＋：Y2SiO5 Crystal at 16 K

By using an Ar^＋ ion laser, a tunable Rh 6G dye laser （linewidth 0.5cm^-1） pumped by the second harmonic of a YAG：Nd laser and a Coherent 899-21 dye laser as light sources and using a monochromator, a phase-locking amplifier and a computer as the data detecting system, we detect the optical properties of Eu^3＋-doped Y2SiO5 crystal. Persistent ,spectral hole burning （PSHB） are observed in the Eu^3＋ ions spectral lines （^5 Do-T Fo transition） in the crystal at the temperature of 16K. For 15mW dye laser burning the crystal for 0.1 s spectral holes with hole width about 80 MHz both at 579.62nm and at 579.82nm are detected and the holes can remain for a long time, more than 10h.     

Structural and electrical properties of La0.5Sr0.5CoO3 films on SrTiO3 and porous a-Al2O3 substrates

Films of La_0.5Sr_0.5CoO₃ (LSCO) have been deposited on specially treated TiO₂-terminated (001) SrTiO₃ substrate surfaces and on macroporous polycrystalline !-Al₂O₃ substrates, having a mean pore diameter of 80 nm, by pulsed laser deposition. The films deposited on SrTiO₃ are good conducting, (001) textured, and exceptionally smooth (1-2 Å for 100 nm thick films). LSCO films deposited on porous !-Al₂O₃ are polycrystalline and exhibit good crystallographic and electrical properties despite the large substrate roughness and the differences in lattice parameters and crystal structure between the film and the substrate. Different growth modes have been observed on the porous !-Al₂O₃ substrates depending on the oxygen pressure during film deposition. Films grown at an oxygen pressure of 10^-1 mbar are macroporous, whereas films grown at 10^-2 mbar completely cover the substrate pores. In the latter case, strain effects lead to film cracking.     

Effect of different oxidizing gases on the in-situ growth of YBa2Cu3O7−δ films by pulsed laser deposition

The effectiveness of oxygen (O₂), nitrous oxide (N₂O), and nitrogen dioxide (NO₂) as oxidizing agents during in-situ growth of YBa₂Cu₃O_7−δ (YBCO) films on (100) SrTiO₃ substrates by pulsed laser deposition has been studied as a function of deposition temperature (700–800°C), and laser wavelength (193,248 and 355 nm), for a wide range of oxidizer gas pressure (0.1–200 mTorr). In general, the superconducting transition temperature of the films has been found to increase with increasing oxidant pressure, with zero-resistance temperature ≈90 K only obtained in films prepared in a relatively high pressure (150–200 mTorr) of oxidizer gas. At lower pressures, the transition temperature while being depressed is quite sensitive to the nature of the oxidant, the laser wavelength and the deposition temperature. Nevertheless, independent of the oxygen source or other growth parameters, an almost linear decrease in transition temperature with a corresponding increase in the c-axis lattice parameter has been observed for all the film. YBCO films have also been deposited in a low pressure background (≤ 1 mTorr) using a combination of atomic oxygen and pulsed molecular oxygen. The results are discussed in terms of the oxygen requirement for kinetic and thermodynamic stability of YBCO during growth of the film by pulsed laser deposition.     

退火氧压对YBa2Cu3O7-x薄膜中的激光感生热电电压效应的影响

测量了在不同氧压下退火生长的YBa₂Cu₃O_7-x(YBCO)薄膜中的激光感生热电电压(LITV)信号,发现随退火氧压的增大可使LITV信号的峰值有2—4倍的增强,并且变化趋势与薄膜热电势的各向异性随氧含量的变化规律相同.波长在473—808nm范围内的连续激光辐照,在5000Pa的氧压下退火生长的YBCO薄膜中探测到的LITV信号最大;而紫外脉冲激光辐照时,LITV信号的最大值出现在退火氧压为10⁵Pa 关键词： 2Cu₃O_7-x薄膜')" href="#">YBa₂Cu₃O_7-x薄膜 激光感生热电电压 各向异性的Seebeck系数 氧含量     

Quantum cutting downconversion by cooperative energy transfer from Bi3+ to Yb3+ in Y2O3 phosphor

Bi~(3+) and Yb~(3+) codoped cubic Y2O3 phosphors are prepared by pechini sol-gel method.Strong near-infrared (NIR) emission around 980 nm from Yb~(3+)(2F5/2 → 2F7/2) is observed under ultraviolet light excitation.A broad excitation band ranging from 320 to 360 nm,owing to the 6s 2 →6s6p transition of Bi~(3+) ions,is recorded when the Yb~(3+) emission is monitored,which suggests a very efficient energy transfer from Bi~(3+) ions to Yb~(3+) ions.The Yb~(3+) concentration dependences of both the Bi~(3+) and the Yb~(3+) emissions are investigated.The decay curve of Bi ~(3+) emission under the excitation of 355 nm pulse laser is used to explore the Bi~(3+) →Yb~(3+) energy transfer process.Cooperative energy transfer (CET) is discussed as a possible mechanism for the near-infrared emission.     

Mass spectrometric studies of laser ablated plume from a superconducting material

The ionic species present in the laser ablated plume from the surface of the Bi_1.6Pb_0.4Sr₂Ca₂Cu₃O_ysuperconducting target have been investigated using a non-commercial laboratory developed linear time-of-flight (TOF) mass spectrometer. The recorded TOF mass spectra reveal the presence of all the atomic species of the target material, monoxide and cluster ions. The occurrence of clusters in the mass spectra is the evidence of aggregation processes at higher laser fluence. The dependence of the ionic yield of the species has been studied using the fundamental (1064 nm), second harmonic (532 nm) and fourth harmonic (266 nm) of a Nd:YAG laser. The maximum ionization of the species present in the plume is observed at 266 nm even at lower laser fluence. The effect of the laser fluence on the total and individual ionic yields of the ablated species is also presented.     

Piezoelectric Pb0.7La0.2TiO3 prepared by pulsed laser deposition on (100)InP

La-modified PbTiO₃ (PLT) thin films have been deposited by pulsed laser deposition on (100)InP substrates. The nominal target composition was selected to optimize piezoelectric properties of the material. It is shown that PLT deposition on as-received InP produces amorphous PLT films because of the presence of a native oxide on the substrate. PLT films deposited on bare InP have poor adhesion as a result of the surface reoxidation of the substrate due to the high oxygen pressure required for the deposition of stoichiometric PLT. To prevent substrate oxidation, several buffer oxides (CeO₂, ZrO₂, SrO, Y-stabilized ZrO₂, MgO, and SrTiO₃) have been grown in vacuum on (100)InP. Highest-quality heteroepitaxy was found with Y-stabilized ZrO₂ (YSZ), being 𘜄¢{100} YSZ𘜄¢{100} InP oriented. The PLT deposited on this buffer layer is oriented with the [101] direction perpendicular to the substrate surface plane.     

GROWTH MODE OF Cu-RICH PARTICLES ON LASER-ABLATED YBa2Cu3O7 THIN FILMS

The microstructure of the laser-ablated YBa₂Cu₃O₇ (YBCO) thin film deposited on heated (100) SrTiO₃ substrate was examined by transmission electron microscope. The par-ticles on the film mainly consist of CuO and few CuYO₂. Most of these non-superconducting particles nucleate on or near the surface of the film and protrude about 100-400 nm in height, A large amount of a-axis YBCO grains also exist in the film, which nucleate at the substrate surface and grow perpendicularly above the c-axis YBCO film. The YBCO thin film deposited under low oxygen pressure has very different microstructure compared with YBCO thin film deposited under high oxygen pressure.     

Low-temperature growth of Y2O3 thin films by ultraviolet-assisted pulsed laser deposition

Thin Y₂O₃ films have been grown on (100) Si using an in-situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique. When compared to conventional pulsed laser deposited (PLD) films under similar conditions, the UVPLD-grown films exhibited better structural and optical properties, especially those grown at lower substrate temperatures, from 200 °C to 400 °C. X-ray diffraction investigations showed that the films grown were highly crystalline and textured. According to X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry investigations, UVPLD-grown Y₂O₃ films have a better overall stoichiometry and contain less physisorbed oxygen than the conventional PLD-grown films. The refractive index values, measured in the range 300-750 nm by using variable-angle spectroscopic ellipsometry, were similar to those of a reference Y₂O₃ film.     

N2O+离子A2Σ+电子态的光解动力学研究

用一束波长为360.55nm的激光，通过N2O分子的（3+1）共振多光子电离（REMPI）过程制备纯净且布居完全处于X2Π(000)态的母体离子N2O+，然后用另一束波长在275—328nm范围内的可调谐激光将制备的N2O+离子激发至预解离电子态A2Σ+.实验发现，由于解离碎片NO+所具有的一定的反冲速度，其TOF质谱峰明显比N2O+母体宽.通过分析NO+碎片TOF质谱峰形状，得到了解离产物的总平均平动能〈ET〉；通过考察〈ET〉随光解能量的变化，发现光解能量在32000cm-1附近约250cm-1的变化 关键词： N2O+离子A2Σ+态 TOF质谱峰 预解离机理     

A new method to preserve the c-axis growth of thick YBa2Cu3O7–δ films grown by pulsed laser deposition

YBa₂Cu₃O_7–δ (YBCO) films were prepared on (1 0 0) MgO substrates by pulsed laser deposition (PLD) method. In order to eliminate the a-axis growth, which is commonly observed in the YBCO film thicker than a critical value, we developed a new PLD target that was sintered at a temperature far below YBCO 123 phase formation. The surface analysis made by AFM technique confirmed that very fine particles of around 20 nm size could be ejected from the new target to the substrate. The fine oxide clusters could be easily moved and incorporated into the YBCO phase thus benefited the c-axis growth even in the thick films. For instance, only the c-axis growth in the new film with a thickness of about 650 nm was larger than a critical thickness of the a-axis growth. However, in the standard film of the same thickness, there is 24.5% of the a-axis growth accompanying the main c-axis growth. Therefore, the c-axis growth could be preserved in the very thick YBCO film by a non-superconducting target.     

Broadband Infrared Luminescence from Bismuth-Doped GeS2--Ga2S3 Chalcogenide Glasses

Near-infrared luminescence is observed from bismuth-doped GeS2-Ga2Sa chalcogenide glasses excited by an 808 nm laser diode. The emission peak with a maximum at about 1260 nm is observed in 80GeS2-2OGa2 Sa：O.fBi glass and it shifts toward the long wavelength with the addition of Bi gradually. The full width of half maximum （FWHM） is about 200 nm. The broadband infrared luminescence of Bi-doped GeS2-Ga2Sa chalcogenide glasses may be predominantly originated from the low valence state of Bi, such as Bi＋. Raman scattering is also conducted to claxify the structure of glasses. These Bi-doped GeS2 Ga2Sa chalcogenide glasses can be applied potentially in novel broadband optical fibre amplifiers and broadly tunable laser in optical communication system.     

Study of pulsed laser deposition of RuO2 and SrRuO3 thin films

In this study, the pulsed laser ablation of RuO₂ and SrRuO₃ (SRO) is investigated by observing the fluorescence from excited atoms in the plume by using a framing streak camera. Vaporization, phase explosion and boiling are suggested to play the main roles in the processes for the interaction between the laser beam and target. Collisions and adiabatic expansion are also suggested before particles move forward with shifted Maxwellian spatial distribution. In O₂ pressure, numerous collisions between fast and slow atoms occur and result in the exchange of speeds. The structural and electrical (conductivity and work-function) properties of RuO₂ and SRO thin films are measured. Epitaxial SRO growth was obtained at growth temperatures down to 350 °C. Ferroelectric and high- dielectric thin-film capacitors with RuO₂ or SRO thin film electrode are also studied.     

Propagation of LaMnO3 laser ablation plume in oxygen gas

The propagation of LaMnO₃ laser ablation plume in oxygen background has been investigated using fast photography of overall visible plume emission and time-resolved optical emission spectroscopy. The plume expansion was studied with ambient oxygen pressures ranging from vacuum level to 100 Pa. Free-expansion, splitting, sharpening and stopping of the plume were observed at different pressures and time delays after the laser pulse. Time-resolved optical emission spectroscopy showed that oxides are mainly formed through reaction of the atomic species ablated from the target with oxygen in the gas-phase. These reactions mainly affect the content of lanthanum oxide in the plume, while emission of manganese oxide is barely observed in all the range of pressure investigated.     

Fast imaging of the plume expansion produced by laser ablation of LiNbO3

Fast photography of the plume produced by laser ablation of LiNbO₃ in vacuum has been performed using an image intensified CCD (ICCD) camera in a time interval up to 2 7s after the laser pulse. Two differently oriented single crystalline LiNbO₃ targets were used. The results show that although the emission intensity of the laser-generated plume initially depends on the crystalline orientation of the target, it reaches a stationary state after several minutes which is the same for both targets orientations. Under these stationary conditions, the angular distribution of the Li atoms is found to be broader than that of Nb atoms. The observed less forward directed expansion of the Li species may explain the poor Li content normally observed in films grown by laser ablation of LiNbO₃ in vacuum.     

Nanosecond and femtosecond ablation of La0.6Ca0.4CoO3: a comparison between plume dynamics and composition of the films

Thin films of La_0.6Ca_0.4CoO₃ were grown by pulsed laser ablation with nanosecond and femtosecond pulses. The films deposited with femtosecond pulses (248 nm, 500 fs pulse duration) exhibit a higher surface roughness and deficiency in the cobalt content compared to the films deposited with nanosecond pulses (248 nm, 20 ns pulse duration). The origin of these pronounced differences between the films grown by ns and fs ablation has been studied in detail by time-resolved optical emission spectroscopy and imaging. The plumes generated by nanosecond and femtosecond ablation were analyzed in vacuum and in a background pressure of 60 Pa of oxygen. The ns-induced plume in vacuum exhibits a spherical shape, while for femtosecond ablation the plume is more elongated along the expansion direction, but with similar velocities for ns and fs laser ablation. In the case of ablation in the background gas similar velocities of the plume species are observed for fs and ns laser ablation. The different film compositions are therefore not related to different kinetic energies and different distributions of various species in the plasma plume which has been identified as the origin of the deficiency of species for other materials.     

Structural Deformation of CO22+ in Intense Femtosecond Laser Fields

The angular distributions of CO^＋ from the dissociation of CO2^2＋ and CO2^＋ in intense femtosecond laser fields （45 fs, about 5 × 10^15 W/cm^2） are studied at a laser wavelength of 800nm based on the time-of-flight mass spectra of CO^＋ fragment ions. The experimental results show that structural deformation occurs in the charge state of CO2^2＋ and the CO^＋ maintains linear geometrical structure.     

KNb0.77Al0.23O2.77的高压相变研究

 利用水热法合成了立方相KNb_0.77Al_0.23O_2.77。在水热晶化过程中得到了包括正交相钙钛矿和一新相在内的中间相产物。结构相变行为采用XRD、DSC、高压Raman和XPS进行了表征。结果表明，低于1 000 ℃的热处理不能导致KNb_0.77Al_0.23O_2.77发生结构相交。而在4.49 PGa高压下可能发生了到一新相的结构转变。高温高压处理可以导致另一新相的出现。最后对该立方相的相变机理进行了研究。