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月球表面环境对Mo/Si多层膜光学特性的影响 总被引:1,自引:0,他引:1
研究了月球表面高温、强辐射的空间环境下Mo/Si多层膜的热稳定性和辐照稳定性。Mo/Si多层膜采用磁控溅射法镀制,将制备好的多层膜在100℃和200℃高温下加热,利用激光等离子体反射率计和X射线衍射仪(XRD)对加热前后的多层膜进行了测量。结果显示在200℃以内,多层膜反射率和中心波长没有显著变化,表现出良好的热稳定性。利用Monte Carlo方法模拟了质子在多层膜内造成的缺陷的分布和浓度分布。模拟显示,能量大的质子沉积在多层膜内部,造成的缺陷也集中在多层膜内部。用能量为60keV,剂量分别为3×1012 cm-2和3×1014 cm-2的质子对Mo/Si多层膜进行辐照实验。发现多层膜内部出现了烧蚀损伤缺陷及节瘤缺陷。结果表明能量相同时,辐照剂量越大对多层膜反射率影响越大。 相似文献
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极紫外光刻是实现22nm技术节点的候选技术。极紫外光刻使用的是波长为13.5nm的极紫外光,但在160~240nm波段,极紫外光刻中的激光等离子体光源光谱强度、光刻胶敏感度以及多层膜的反射率均比较高,光刻胶在此波段的曝光会降低光刻系统的光刻质量。从理论和实验两方面验证了在传统Mo/Si多层膜上镀制SiC单层膜可对极紫外光刻中的带外波段进行有效抑制。通过使用X射线衍射仪、椭偏仪以及真空紫外(VUV)分光光度计来确定薄膜厚度、薄膜的光学常数以及多层膜的反射率,设计并制备了[Mo/Si]40SiC多层膜。结果表明,在极紫外波段的反射率减少5%的前提下,带外波段的反射率减少到原来的1/5。 相似文献
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针对极紫外多层膜在激光等离子体诊断、极紫外光刻等方面的应用,进行了Mo/Si多层膜残余应力的实验研究,讨论了多层膜残余应力的成因。实验结果表明:Mo单层膜表现为张应力, Si单层膜表现为压应力;通过传统方法制备的13.0 nm处高反射率的40对Mo/Si多层膜会产生-500 MPa左右的压应力,其压应力主要是由膜层之间的贯穿扩散引起的;通过改变膜层比率可以在一定程度上补偿因贯穿扩散产生的压应力,但是以牺牲多层膜反射率为代价。 相似文献
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A series of Mo/Si multilayers with the same periodic length and different periodic number were prepared by magnetron sputtering, whose top layers were respectively Mo layer and Si layer. Periodic length and interface roughness of Mo/Si multilayers were determined by small angle X-ray diffraction (SAXRD).Surface roughness change curve of Mo/Si multilayer with increasing layer number was studied by atomic force microscope (AFM). Soft X-ray reflectivity of Mo/Si multilayers was measured in National Synchrotron Radiation Laboratory (NSRL). Theoretical and experimental results show that the soft X-ray reflectivity of Mo/Si multilayer is mainly determined by periodic number and interface roughness, surface roughness has little effect on reflectivity. 相似文献
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A set of Mo/Si periodic multilayers is studied by non-destructive analysis methods. The thickness of the Si layers is 5 nm while the thickness of the Mo layers changes from one multilayer to another, from 2 to 4 nm. This enables us to probe the effect of the transition between the amorphous and crystalline state of the Mo layers near the interfaces with Si on the optical performances of the multilayers. This transition results in the variation of the refractive index (density variation) of the Mo layers, as observed by X-ray reflectivity (XRR) at a wavelength of 0.154 nm. Combining X-ray emission spectroscopy (XES) and XRR, the parameters (composition, thickness and roughness) of the interfacial layers formed by the interaction between the Mo and Si layers are determined. However, these parameters do not evolve significantly as a function of the Mo thickness. It is observed by diffuse scattering at 1.33 nm that the lateral correlation length of the roughness strongly decreases when the Mo thickness goes from 2 to 3 nm. This is due to the development of Mo crystallites parallel to the multilayer surface. 相似文献
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为了实现7nm波段Mo/B4C多层膜反射镜元件的制备,研究了不同退火方式对Mo/B4C多层膜应力和热稳定性的影响。首先,采用直流磁控溅射方法分别基于石英和硅基板制作Mo/B4C多层膜样品,设计周期为3.58nm、周期数为60,Mo膜层厚度与周期的比值为0.4。其次,采用不同的退火方式对所制作的样品进行退火实验,最高退火温度500℃。最后,分别采用X射线掠入射反射、X射线散射和光学干涉仪的方法对退火前后的Mo/B4C多层膜的周期、界面粗糙度和应力进行测试。测试结果表明采用真空退火方式能够有效降低Mo/B4C多层膜的应力,且退火前后Mo/B4C多层膜的周期和界面粗糙度无明显变化,证明Mo/B4C多层膜在500℃以内具有很好的热稳定性。 相似文献
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为提高Mo/Si多层膜的稳定性与使用寿命,通过分析多层膜驻波电场的分布,对表面保护层及多层膜最上层材料的厚度进行优化设计,使优化后的反射率最高.计算表明,一定厚度的表面保护层总对应一个最优的最上层材料厚度.在13.36 nm波长,膜对数为50的Mo/Si多层膜10度入射的理论反射率为74.47%;当添加厚度为2.3 nm的Ru作为表面保护层,对应多层膜最上层Si的优化厚度为3.93 nm,其理论反射率为75.20%.设计结果表明,通过优化设计表面保护层,可以提高多层膜稳定性,改善多层膜性能. 相似文献
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月基极紫外相机多层膜反射镜 总被引:1,自引:0,他引:1
月基极紫外相机用于月球表面对地球等离子体层辐射出的30.4 nm谱线进行成像观测,多层膜反射镜是月基极紫外相机的重要光学元件。根据月基极紫外相机技术参数,选择了B4C/Mg,B4C/Mg2Si,B4C/Al,B4C/Si,Mo/Si等材料,对其周期厚度、材料比例、周期数等参数进行优化。计算了以上材料组合在30.4 nm的反射率曲线。考虑到月球环境的特殊性和材料的物理化学性质,从中选择出Mo/Si和B4C/Si两种组合,利用磁控溅射进行镀制。Mo/Si和B4C/Si多层膜在30.4 nm反射率分别达到15.3%和22.8%。 相似文献
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Picosecond ultrasonics is used to study the damage or degradation of Mo/Si multilayers caused by laser irradiation. Changes of surface phonon spectra in multilayers due to femtosecond laser damaging are observed in a regime of extremely low fluence level, well before the onset of melting, delamination, distortion, or material interdiffusion. It is found that the damage is shallow in depth (top few layers), and its mechanism is laser-induced changes in acoustic impedances, most likely due to stress relaxation. Its effects on extreme ultraviolet (EUV) reflectance and implications for projection EUV lithography are also discussed. We believe this technique has a potential application as a highly sensitive tool capable of detecting low-degree or early-stage damage of multilayers. PACS 68.65.Cd; 61.80.Ba; 78.47.+p 相似文献
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Mo/Si multilayers with a single-layer thickness in the nanometre range (60 Mo/Si layers in total) were deposited on Si(100) substrates by dc magnetron sputtering. Upon uniaxial bending at elevated temperatures between 300 and 440 °C in vacuum, unconventional crack patterns formed in the multilayers. Tensile stress within the multilayer stack and Si substrate due to bending during thermal treatment was estimated to be on the order of 100 MPa. A combination of external bending, residual and thermal stresses is considered to be the reason for this phenomenon. Cracks had either a sinusoidal or a spiral shape. The surface frequency of the spirals observed was 10 cm-2, with a track width of 30 m and a spiral diameter of 300 m. In general, cracking was accompanied by complete local de-bonding of the whole Mo/Si multilayer stack from the substrate. Fracture patterns were studied by optical microscopy. In addition, the morphological parameters of the remaining non-delaminated multilayers were determined by means of X-ray reflectometry supported by investigation of phase content by wide-angle X-ray scattering . PACS 68.35.-p; 68.35.Bs; 68.90.+g; 81.05.Zx 相似文献
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K. Le Guen M.‐H. Hu J.‐M. André P. Jonnard Z. Wang J. Zhu A. Galtayries C. Meny E. Meltchakov C. Hecquet F. Delmotte 《X射线光谱测定》2011,40(5):338-342
Nanometric Co/Mg, Co/Mg/B4C, Al/SiC and Al/Mo/SiC periodic multilayers deposited by magnetron sputtering are studied in order to correlate their optical performances in the extreme ultraviolet (EUV) range to their structural quality. To that purpose, our recently developed methodology based on high‐resolution X‐ray emission spectroscopy (XES) and X‐ray and EUV reflectometry is now extended to nuclear magnetic resonance (NMR) spectroscopy and time‐of‐flight secondary ions mass spectrometry (ToF‐SIMS). The analysis of the Co Lαβ and Mg Kβ emission spectra shows that the Co and Mg atoms within the multilayers are in a chemical state equivalent to that of the atoms in the pure Co and Mg references, respectively. But NMR spectra give evidence for a reaction between Co atoms and B and/or C atoms from B4C. The Al and Si Kβ emission spectra do not reveal the formation of an interfacial compound in Al/SiC and Al/Mo/SiC. Only the roughness limits the optical quality of Al/SiC. The comparative analysis of the ToF‐SIMS spectra of Al/SiC and Al/Mo/SiC indicates that the structural quality is enhanced when Mo is introduced within the stack. Copyright © 2011 John Wiley & Sons, Ltd. 相似文献
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E. Majkova S. Luby R. Senderak Y. Chushkin M. Jergel I. Zergioti D. Papazoglou A. Manousaki C. Fotakis 《Applied Physics A: Materials Science & Processing》2003,76(5):763-766
The sub-picosecond laser microstructuring of multilayer gratings is presented in this paper. A micromachining system operating
with a 0.5 ps KrF laser at 248 nm was used to etch grating structures with a groove width of 1–2 μm in Mo/Si and Si/Mo multilayers.
Atomic force microscopy, scanning electron microscopy and X-ray reflectivity were used to characterize the microetched patterns.
The ω-scans around the 1st Bragg maximum show symmetric satellites up to 3rd order, with positions corresponding to the grating
period. The use of sub-picosecond laser pulses minimizes the thermally affected zone and enhances the quality of the etched
features. Short pulse laser processing is advantageous for the fabrication of high spatial resolution microstructures required
in X-ray optics.
Received: 21 May 2002 / Accepted: 19 August 2002 / Published online: 15 January 2003
RID="*"
ID="*"Corresponding author. Email: dpapa@iesl.forth.gr 相似文献
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A methodology combining non-destructive X-ray techniques is proposed to study the interfacial zones of periodic multilayers. The used X-ray techniques are X-ray emission spectroscopy induced by electrons and X-ray reflectivity in the hard and soft X-ray ranges. The first technique evidences the presence of compounds at the interfaces and gives an estimation of the thickness of the interfacial zone. These informations are used to constrain the fit of the X-ray reflectivity curves that enables to determine the thickness and roughness of the various layers of the stacks. The results are validated in the soft X-ray range where the reflectivity curves are very sensitive to the chemical state of the elements present in the stack. The methodology is applied to characterize Mo/Si (1-4 nm/2 nm) and B4C/Mo/Si (1 nm/2 nm/2 nm) multilayers. It is shown that the two interfacial zones of the Mo/Si multilayers are composed of the silicides MoSi2 and Mo5Si3. It is found that the interface thickness is about to be 0.4-0.8 nm depending on the samples. The molybdenum silicides are also evidenced at the interfaces of the B4C/Mo/Si multilayers. However, their interface thickness is 0.2 nm thinner than that of the same stack without the B4C layers, these layers being at the Mo-on-Si side or at the Si-on-Mo side. Thus, the B4C layers do not stop but only reduce the interdiffusion between the Mo and Si layers. 相似文献
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Jun Xu Shenghua Sun Yunqing Cao Peng Lu Wei Li Kunji Chen 《Particle & Particle Systems Characterization》2014,31(4):459-464
Periodically nanopatterned Si structures have been prepared by using a nanosphere lithography technique. The formed nanopatterned structures exhibit good anti‐reflection and enhanced optical absorption characteristics. The mean surface reflectance weighted by AM1.5 solar spectrum (300–1200 nm) is as low as 5%. By depositing Si quantum dot/SiO2 multilayers (MLs) on the nanopatterned Si substrate, the optical absorption is higher than 90%, which is significantly improved compared with the same multilayers deposited on flat Si substrate. Furthermore, the prototype n‐Si/Si quantum dot/SiO2 MLs/p‐Si heterojunction solar cells has been fabricated, and it is found that the external quantum efficiency is obviously enhanced for nanopatterned cell in a wide spectral range compared with the flat cell. The corresponding short‐circuit current density is increased from 25.5 mA cm?2 for flat cell to 29.0 mA cm?2 for nano‐patterned one. The improvement of cell performance can be attributed both to the reduced light loss and the down‐shifting effect of Si quantum dots/SiO2 MLs by forming periodically nanopatterned structures. 相似文献