Demonstration of nanophotonic NOT gate using near-field optically coupled quantum dots

We propose and demonstrate the operation of a nanometric optical NOT gate using CuCl quantum dots coupled via an optical near-field interaction. The device was smaller than 20 nm and its repeated operation was verified. The operating energy of this device was much lower than that of a conventional photonic device. We also introduce all-optical NAND and NOR gates using coupled quantum dots. Toward an actual nanophotonic device, we discuss the possibility of coupled InAlAs quantum dots. A double layer of InAlAs quantum dots for nanophotonic device operation was prepared using molecular beam epitaxial growth. We obtained a near-field spectroscopy signal, indicating that the InAlAs quantum dots coupled with the optical near field acted as a NOT gate. The experimental results show that the sample has great potential as an actual nanophotonic device. PACS 78.67.Hc; 07.79.Fc; 42.79.Ta     

One-electron spin-dependent transport in split-gate structures containing self-organized InAs quantum dots

The paper presents the results obtained in a study of electron transport in split-gate structures prepared from heterostructures with self-organizing InAs quantum dots situated close to a two-dimensional electron gas. Coulomb oscillations of current through InAs quantum dots depending on the voltage on the gate were observed. Coulomb current oscillations persisted up to about 20 K. The Coulomb energy ΔE _C = 12.5 meV corresponding to theoretical estimates for the p-states of quantum dots in our structures was determined.     

Photoluminescence kinetics of structures with InAs quantum dots for IR photodetectors

The experimental results of a photoluminescence kinetics study of InAs/GaAs structures with quantum dots grown by metal-organic vapor-phase epitaxy are shown. The measurements have revealed the fast capture of excited carriers from the GaAs barrier to quantum dots and slow interlevel relaxation inside the quantum dots.     

Exchange interaction in InAs nanocrystal quantum dots

The near band-gap level structure in high-quality colloidal InAs nanocrystal quantum dots within the very strong confinement regime is investigated. Size-selective photoluminescence excitation and fluorescence line narrowing measurements reveal a size-dependent splitting between the absorbing and the emitting states. The splitting is assigned to the confinement-enhanced electron–hole exchange interaction. The size dependence of the splitting significantly deviates from the idealized 1/r³scaling law for the exchange splitting. A model incorporating a finite barrier which allows for wavefunction leakage is introduced. The model reproduces the observed 1/r²dependence of the splitting and good agreement with the experimental data is obtained. The smaller barriers for embedded InAs dots grown by molecular-beam epitaxy, are predicted to result in smaller exchange splitting as compared with colloidal dots with a similar number of atoms.     

Direct observation of charge-carrier capture in an array of self-assembled InAs/GaAs quantum dots

In this work, charge-carrier capture by an array of self-assembled InAs/GaAs quantum dots was directly observed for the first time by capacitance recharge. It is proposed to process the obtained transient-capture data by a similar method to that used for emission, by the box-car method. The capture activation energies are determined and compared with the emission activation energies.     

Persistent narrowing of nuclear-spin fluctuations in InAs quantum dots using laser excitation

We demonstrate the suppression of nuclear-spin fluctuations in an InAs quantum dot and measure the timescales of the spin narrowing effect. By initializing for tens of milliseconds with two continuous wave diode lasers, fluctuations of the nuclear spins are suppressed via the hole-assisted dynamic nuclear polarization feedback mechanism. The fluctuation narrowed state persists in the dark (absent light illumination) for well over 1 s even in the presence of a varying electron charge and spin polarization. Enhancement of the electron spin coherence time (T2*) is directly measured using coherent dark state spectroscopy. By separating the calming of the nuclear spins in time from the spin qubit operations, this method is much simpler than the spin echo coherence recovery or dynamic decoupling schemes.     

Electronic characteristics of InAs self-assembled quantum dots

Deep-level transient spectroscopy and photoluminescence studies have been carried out on structures containing self-assembled InAs quantum dots formed in GaAs matrices. The use of n- and p-type GaAs matrices allows us to study separately electron and hole levels in the quantum dots by the deep-level transient spectroscopy technique. From analysis of deep-level transient spectroscopy measurements it follows that the quantum dots have electron levels 130 meV below the bottom of the GaAs conduction band and heavy-hole levels at 90 meV above the top of the GaAs valence band. Combining with the photoluminescence results, the band structures of InAs and GaAs have been determined.     

Kondo-enhanced Andreev tunneling in InAs nanowire quantum dots

We report measurements of the nonlinear conductance of InAs nanowire quantum dots coupled to superconducting leads. We observe a clear alternation between odd and even occupation of the dot, with subgap peaks at |V(sd)| = Delta/e markedly stronger (weaker) than the quasiparticle tunneling peaks at |V(sd)| = 2Delta/e for odd (even) occupation. We attribute the enhanced Delta peak to an interplay between Kondo correlations and Andreev tunneling in dots with an odd number of spins, and we substantiate this interpretation by a poor man's scaling analysis.     

Carrier recombination dynamics in self-ordered InAs quantum dots

Il Nuovo Cimento D - A photoluminescence study of self-ordered InAs quantum dots grown by molecular beam epitaxy on a GaAs substrate is reported. Short pulses and high excitations have been used in...     

Giant optical anisotropy in single InAs quantum dots

We present the experimental evidence of giant optical anisotropy in single InAs QDs. Polarization-resolved photoluminescence spectroscopy in single QDs reveals a linear polarization ratio which fluctuates, from one dot to another, in sign and in magnitude with absolute values up to 82%. We do not observe any dependence of the linear polarization on incident power and temperature.     

Electron transport and shell structures of single InAs quantum dots probed by nanogap electrodes

We have investigated electron transport and electron filling in single InAs quantum dots (QDs) using nanogap electrodes. Elliptic InAs QDs with diameter of 60/80 nm exhibited clear shell filling up to 12 electrons. Shell-dependent charging energies and level quantization energies for the s, p, and d states were determined from the addition energy spectra. Furthermore, it is found that the charging energies and the tunneling conductances strongly depend on the shell, reflecting that the electron wave functions for higher shells are more extended in space.     

Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height

An ultrawide-bandwidth, superluminescent light-emitting diode (SLED) utilizing multiple layers of dots of tuned height is reported. Due to thermal effect, the superluminescent phenomenon is observed only under pulse-mode operation. The device exhibits a 3 dB bandwidth of 190 nm with central wavelength of 1020 nm under continuous-wave (cw) conditions. The maximum corresponding output power achieved in this device under cw and pulsed operation conditions are 0.54 mW and 17 mW, respectively.     

Universal quantum logic gates in a scalable Ising spin quantum computer

We consider the model of quantum computer, which is represented as a Ising spin lattice, where qubits (spin-half systems) are separated by the isolators (two spin-half systems). In the idle mode or at the single bit operations the total spin of isolators is 0. There are no need of complicated protocols for correcting the phase and probability errors due to permanent interaction between the qubits. We present protocols for implementation of universal quantum gates with the rectangular radio-frequency pulses.     

Two-dimensional probe absorption in coupled quantum dots

We investigate the two-dimensional (2D) probe absorption in coupled quantum dots. It is found that, due to the position-dependent quantum interference effect, the 2D optical absorption spectrum can be easily controlled via adjusting the system parameters. Thus, our scheme may provide some technological applications in solid-state quantum communication.     

Photoluminescence of charged magneto-excitons in InAs single quantum dots

We calculated the photoluminescence spectra of charged magneto-excitons in single two-dimensional parabolic quantum dots, using an unrestricted Hartree–Fock method. The calculated luminescence spectra explain well the observed red shifts of transition energies of InAs/GaAs single quantum dot by additional electron capture in a dot. The magnetic-field-induced transition of the ground state configuration of trapped electrons causes drastic change in the photoluminescence spectra. The dependence of photoluminescence intensities of charged excitons on the excess energies of photogenerated carriers above the bulk GaAs energy gap is studied phenomenologically, by calculating the steady state electron population probability in a dot.     

Absorption spectroscopy of single InAs self-assembled quantum dots

Excitonic transitions of single InAs self-assembled quantum dots were directly measured at 4.2 K in an optical transmission experiment. We use the Stark effect in order to tune the exciton energy of a single quantum dot into resonance with a narrow-band laser. With this method, sharp resonances in the transmission spectra are observed. The oscillator strengths as well as the homogeneous line widths of the single-dot optical transitions are obtained. A clear saturation in the absorption is observed at modest laser powers.     

Estimation of built-in dipole moment in InAs quantum dots

We have fabricated a Schottky diode embedding InAs self-assembled quantum dots (QDs) grown by alternately supplying In and As sources. As a function of the electric field, we have investigated the photoluminescence (PL) for the InAs QDs in the Schottky diode at 300 K. We controlled the electric field in order that the QD layer was located in the depletion region of Schottky diode. The relationship between the electric field and the depletion width of the Schottky diode was deduced through the capacitance-voltage measurement. The Stark shift was observed in PL spectra for QDs; the energy of the PL line shifted to the lower energy as the electric field increased. It was also observed that the PL emission intensity gradually decreased. By the fitting to the experimental data, we determined a built-in dipole moment, corresponding to an electron-hole separation.