Density of impurity states of shallow donors in a quantum well under intense laser field

The density of donor impurity states in a square GaAs–AlGaAs quantum well under an intense laser field is calculated taking into account the laser dressing effects on both the Coulomb potential and the confining potential. Using the effective-mass approximation within a variational scheme, the donor binding energy is obtained as a function of the laser dressing parameter, and the impurity position. Our results point out that a proper consideration of the density of impurity states may be of relevance in the interpretation of the optical phenomena related to shallow impurities in quantum wells, where the effects of an intense laser field compete with the quantum confinement.     

Effects of laser field and electric field on impurity states in zinc-blende GaN/AlGaN quantum well

Based on the effective-mass approximation, the competition effects between the laser field and applied electric field on impurity states have been investigated variationally in the ZB GaN/AlGaN quantum well (QW). Numerical results show that for any laser field, the electric field makes the donor binding energy present asymmetric distribution with respect to the center of the QW. Moreover, when the laser field is weak, the electric field effects are obvious on the donor binding energy; however, the electric field effects are insensitive to the variation of donor binding energy in the ZB GaN/AlGaN QW with strong laser field.     

A double quantum well in a driving laser field

The dynamic effect of electrons in a double quantum well under the influence of a monochromatic driving laser field is investigated. Closed-form solutions for the quasienergy and Floquet states are obtained with the help ofSU (2) symmetry. For the case of weak interlevel coupling, explicit expressions of the quasienergy are presented by the use of perturbation theory, from which it is found that as long as the photon energy is not close to the tunnel splitting, the electron will be confined in an initially occupied eigenstate of the undriven system during the whole evolution process. Otherwise, it will transit between the lowest two levels in an oscillatory behavior.     

Donor impurity states in direct-gap SiGe quantum well: Applied electric field and quantum size effects

Within the framework of the effective-mass approximation and variational procedure, competition effects between applied electric field and quantum size on donor impurity states in the direct-gap Ge/SiGe quantum well (QW) have been investigated theoretically. Numerical results show that the applied electric field (quantum size) dominates electron and impurity states in direct-gap Ge/SiGe QW with large (small) well width. Moreover, the competition effects also induce that the donor binding energies show obviously different behaviors with respect to electric field in the QW with different well widths. In particular, when the impurity is located at left boundary of the QW, the donor binding energy is insensitive to the variation of well width when well width is large for any electric field case.     

Intense laser field effects on the electron Raman scattering in a strained InGaN/GaN quantum well

The differential cross-section for an intersubband electron Raman scattering process in a strained InGaN/GaN quantum well in the presence of an intense laser field is studied. In the effective-mass approximation, the electronic structure is calculated by taking into account the effects of spontaneous and piezoelectric polarization fields on the confinement potential. Effects of laser field strength, indium composition and the well width on the differential cross-section of the strained quantum well are investigated. Results show that the position and the magnitude of the peaks of emission spectra considerably depend on the laser field strength as well as structural parameters.     

Electron states and electron Raman scattering in semiconductor double cylindrical quantum well wire

The differential cross section for an electron Raman scattering process in a semiconductor GaAs/AlGaAs double quantum well wire is calculated,and expressions for the electronic states are presented.The system is modeled by considering T = 0 K and also with a single parabolic conduction band,which is split into a subband system due to the confinement.The gain and differential cross-section for an electron Raman scattering process are obtained.In addition,the emission spectra for several scattering configurations are discussed,and interpretations of the singularities found in the spectra are given.The electron Raman scattering studied here can be used to provide direct information about the efficiency of the lasers.     

The effect of laser field intensity on polarizability in a quantum well

A systematic study of binding energy of the ground state of a hydrogenic donor in a quantum well is calculated in the presence of a uniform electric field for different measure of laser intensities. Binding energy of the ground state of a donor is calculated, within the effective mass approximation, with the Bessel and Airy functions. Polarizability of a laser dressed donor impurity in the presence of electric field is reported. It is observed that the polarizability (i) increases as intensity of the laser field increases (ii) increases with the electric field strength and (iii) increases drastically when both the fields are applied. The dependence of the donor binding energy on the well width, the laser field intensity and the electric field is discussed. Our results are in good agreement with the previous investigations for other heterostructures in the presence of laser intensity.     

Intense laser field effects on the linear and nonlinear intersubband optical properties of a semi-parabolic quantum well

By using the compact-density matrix approach, the effect of a nonresonant intense laser field on the linear and nonlinear optical absorptions based on intersubband transitions and the refractive index changes in an asymmetric semiconductor quantum well have been presented. Our results show that the peak position of the absorption coefficient is sensitive to intense laser field, the absorption maximum shifts towards lower energies for increasing intense laser field value. Also we observe as the intense laser field strength increases, the total refractive index change has been increased in magnitude and also shifted towards lower energies. The results indicate that linear and nonlinear optical properties of the low dimensional semiconductor heterostructures can be adjusted in a desired energy range by using intense laser field.     

Magnetic-field dependence of hydrogenic impurity states in a quantum well wire

Summary The binding energy for on-centre impurities in a rectangular quantum well wire is calculated as a function of the width of the wire and perpendicular magnetic field. The results for zero-magnetic-field case are in perfect agreement with previous calculations. The authors of this paper have agreed to not receive the proofs for correction.     

Magnetopolaron states involving confined phonons in a semiconductor quantum well

Energy splitting ΔE _res in double magnetopolaron energy spectrum in rectangular quantum wells as functions of the well width d have been calculated. We have considered in the capacity of interaction leading to resonant coupling between electrons and phonons the interaction with confined phonons and (for comparison) with bulk LO phonons. We have obtained the conditions when the interaction with bulk phonons yields correct results. Calculations for AlAs/GaAs/AlAs and AlSb/InSb/AlSb structures have been performed. Alongside the parameter ΔE _res for a polaron, whose resonant magnetic field is determined by the condition Ω=ω _L1, where Ω is the cyclotron frequency and ω _L1 is the LO phonon frequency in the quantum well (A-polaron), we have calculated ΔE _res for D-(Ω=2ω _L1) and F-polarons (Ω=3ω _L1), which is a factor of $\sqrt 2 $ and $\sqrt 3 $ , respectively, smaller than ΔE _res for the A-polaron. Since the splitting ΔE _res for the A-polaron is very large (up to 0.2?ω _L1), it is more convenient to study in experiments D-and F-polarons since their resonant magnetic fields are lower. We have predicted existence of “weak” magnetopolarons, in which the splitting is proportional to a higher power of Frölich’s coupling constant α than α ^1/2.     

Binding energy of impurity states in an inverse parabolic quantum well under magnetic field

 We have investigated the effects of the magnetic field which is directed perpendicular to the well on the binding energy of the hydrogenic impurities in an inverse parabolic quantum well (IPQW) with different widths as well as different Al concentrations at the well center. The Al concentration at the barriers was always x_max=0.3. The calculations were performed within the effective mass approximation, using a variational method. We observe that IPQW structure turns into parabolic quantum well with the inversion effect of the magnetic field and donor impurity binding energy in IPQW strongly depends on the magnetic field, Al concentration at the well center and well dimensions.     

Donor impurity states in elliptical quantum rings subjected to a magnetic field

Within the effective-mass approximation we calculate the energies of a donor impurity in an elliptical quantum ring subjected to a magnetic field. The energies are found to exhibit Aharonov-Bohm oscillations depending on the magnetic field and the eccentricity. As the eccentricity increases, the energies decrease and the period increases.     

Intense laser field effect on the interband absorption in differently shaped near-surface quantum wells

The 1S-exciton properties and interband absorption spectra in differently shaped near-surface quantum wells (NSQWs) with symmetrical/asymmetrical barriers, under intense laser field, are investigated taking into account the correct dressing effect for the confinement potential and electrostatic interaction between carriers and their image-charges. We found that: i) the 1S-exciton binding energy is significantly reduced by the laser intensity in InGaAs NSQWs of different asymmetrical shape; ii) the red-shift of the absorption peak induced by the asymmetry diminution or by increasing cap layer thickness can be effectively compensated using the blue-shift caused by enhancing laser parameter. Therefore, the optical properties of the differently shaped NSQWs could be tuned by proper tailoring of the heterostructure parameters (well shape, barrier asymmetry) and/or dielectric mismatch as well as by varying the laser field intensity.     

Intense laser effects on donor impurity in a cylindrical single and vertically coupled quantum dots under combined effects of hydrostatic pressure and applied electric field

Using the effective mass and parabolic band approximations and a variational procedure we have calculated the combined effects of intense laser radiation, hydrostatic pressure, and applied electric field on shallow-donor impurity confined in cylindrical-shaped single and double GaAs-Ga_1−xAl_xAs QD. Several impurity positions and inputs of the heterostructure dimensions, hydrostatic pressure, and applied electric field have been considered. The laser effects have been introduced by a perturbative scheme in which the Coulomb and the barrier potentials are modified to obtain dressed potentials. Our findings suggest that (1) for on-center impurities in single QD the binding energy is a decreasing function of the dressing parameter and for small dot dimensions of the structures (lengths and radius) the binding energy is more sensitive to the dressing parameter, (2) the binding energy is an increasing/decreasing function of the hydrostatic pressure/applied electric field, (3) the effects of the intense laser field and applied electric field on the binding energy are dominant over the hydrostatic pressure effects, (4) in vertically coupled QD the binding energy for donor impurity located in the barrier region is smaller than for impurities in the well regions and can be strongly modified by the laser radiation, and finally (5) in asymmetrical double QD heterostructures the binding energy as a function of the impurity positions follows a similar behavior to the observed for the amplitude of probability of the noncorrelated electron wave function.     

Donor impurity states in coupled quantum well wires under hydrostatic pressure and applied electric field

In this work we study the binding energy of the ground state for a hydrogenic donor impurity in laterally coupled GaAs/Ga_1−xAl_xAs quantum well wires, considering the simultaneous effects of hydrostatic pressure and applied electric field. We have used a variational method and the effective mass and parabolic band approximations. The low dimensional structure consists of two quantum well wires with rectangular transverse section coupled by a central Ga_1−xAl_xAs barrier. Our results are reported for several sizes of the structure and we have taken into account variations of the impurity position along the growth direction of the heterostructure.     

Magnetic field effect on the electronic states and the intraband optical absorption spectrum of a laser dressed double quantum dot molecule

The simultaneous effects of intense terahertz (THz) laser, a homogeneous magnetic fields, and the modification of the structural parameters on the electronic states, and the intraband optical absorption spectrum in a two-dimensional double quantum dot molecule are theoretically investigated. The crossing and anticrossing are observed in the energy dependence on the magnetic field induction between the third and the fourth energy levels. Additionally, it is shown that an intense THz laser field always shifts the energy spectrum to higher values. The variation of the structural parameters leads to the change of the positions of the energy levels and the anticrossing point. Finally, we have found that the intraband optical absorption spectrum, particularly the absorption intensity and the peak position, can be effectively regulated by an intense THz laser and a magnetic fields, as well as by the variation of the structural parameters of the double quantum dot molecule.     

Intense laser effects on the optical properties of asymmetric GaAs double quantum dots under applied electric field

We investigated the combined effects of a non-resonant intense laser field and a static electric field on the electronic structure and the nonlinear optical properties (absorption, optical rectification) of a GaAs asymmetric double quantum dot under a strong probe field excitation. The calculations were performed within the compact density-matrix formalism under steady state conditions using the effective mass approximation. Our results show that: (i) the electronic structure and optical properties are sensitive to the dressed potential; (ii) under applied electric fields, an increase of the laser intensity induces a redshift of the optical absorption and rectification spectra; (iii) the augment of the electric field strength leads to a blueshift of the spectra; (iv) for high electric fields the optical spectra show a shoulder-like feature, related with the occurrence of an anti-crossing between the two first excited levels.