Adsorption of hydrogen and carbon monoxide on Rh(1 1 1)/V surface alloys

A detailed study of the interaction of hydrogen and carbon monoxide with two different Rh(1 1 1)/V surface alloys (1/3 monolayer of V in the second atomic layer or 1/3 monolayer of V in form of islands on the surface) is presented in comparison to the clean Rh(1 1 1) surface. For hydrogen a decrease in the sticking coefficient is found for both alloy surfaces. The sticking coefficient of H₂ as a function of the translational energy is similar to the Rh(1 1 1) surface, showing a direct activated adsorption mechanism. For low translational energies hydrogen adsorption is dominated by dynamical steering on Rh(1 1 1) and by a precursor mechanism on the Rh(1 1 1)/V subsurface alloy. The H₂ TPD desorption peaks are shifted to lower temperatures on the alloy surfaces, caused by the downshift of the metal d-band due to V alloying. On all three surfaces the saturation coverage of hydrogen was measured, giving 1.2, 1.0 and 0.8 monolayer for Rh(1 1 1), the Rh(1 1 1)/V subsurface alloy and for the Rh(1 1 1)/V islands, respectively. For CO the sticking coefficients and the saturation coverages are basically the same on the Rh(1 1 1) and the alloy surfaces. There is an extrinsic precursor on the ordered CO (√3×√3) phase on the Rh(1 1 1) surface, but there is no evidence for such a precursor on the Rh(1 1 1)/V subsurface alloy. On the Rh(1 1 1)/V islands surface, the extrinsic precursor exists on the Rh(1 1 1) surface between the V islands. Apparently this precursor is only stable on the ordered CO layer on Rh(1 1 1).     

Epitaxial growth of Bi thin films on Ge(1 1 1)

We investigated Bi thin film growth on Ge(1 1 1) by using low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). In the submonolayer regime, adsorbed Bi atoms form patches of the (2×1) structure. However, the structure does not grow to a long-range order. Following the formation of a (1×1) monolayer (ML) film, two-dimensional (1 1 0)-orientated Bi islands grow. The film orientation changes from (1 1 0) to (1 1 1) at 6-10 ML. The (1 1 0)-oriented Bi film shows a six-domain LEED pattern with missing spots, associated with a glide-line symmetry. The hexagonal (1 1 1) film at 14 ML has a lattice constant 2% smaller than bulk Bi(1 1 1).     

In situ STM study of nanosized Ru and Os islands spontaneously deposited on Pt(1 1 1) and Au(1 1 1) electrodes

We provide an overview of structure and reactivity of selected bimetallic single crystal electrodes obtained by the method of spontaneous deposition. The surfaces that are described and compared are the following: Au(1 1 1)/Ru, Pt(1 1 1)/Ru and Pt(1 1 1)/Os. Detailed morphological information is presented and the significance of this work in current and further study of nanoisland covered surfaces in the catalytic and spectroscopic perspective is highlighted. All surfaces were investigated by in situ STM and by electroanalytical techniques. The results confirm our previous data that nanosized Ru islands are formed with specific and distinctive structural features, and that the Ru growth pattern is different for Au(1 1 1) and Pt(1 1 1). For Au(1 1 1), Ru is preferentially deposited on steps, while a random and relatively sparse distribution of Ru islands is observed on terraces. In contrast, for Ru deposited on Pt(1 1 1), a homogeneous deposition over all the Pt(1 1 1) surface was found. Os is also deposited homogeneously, and at a much higher rate than Ru, and even within a single deposition it forms a large proportion of multilayer islands. On Au(1 1 1), the Ru islands on both steps and terraces reach the saturation coverage within a short deposition time, and the Ru islands grow to multilayer heights and assume hexagonal shapes. On Pt(1 1 1), the Ru saturation coverage is reached relatively fast, but when a single deposition is applied, Ru nanoislands of mainly monoatomic height are formed, with the Ru coverage not exceeding 0.2 ML. For Ru deposits on Pt(1 1 1), we demonstrate that larger and multilayer islands obtained in two consecutive depositions can be reduced in size--both in height and width--by oxidizing the Ru islands and then by reducing them back to a metallic state. A clear increase in the Ru island dispersion is then obtained. However, methanol oxidation chronoamperometry shows that the surface with such a higher dispersion is less active to methanol oxidation than the initial surface. A preliminary interpretation of this effect is provided. Finally, we studied CO stripping reaction on Pt(1 1 1)/Ru, Au(1 1 1)/Ru and on Pt(1 1 1)/Os. We relate CO oxidation differences observed between Pt(1 1 1)/Ru and Pt(1 1 1)/Os to the difference in the oxophilicity of the two admetals. In turn, the difference in the CO stripping reaction on Pt(1 1 1)/Ru and Au(1 1 1)/Ru with respect to the Ru islands is linked to the effect of the substrate on the bond strength and/or adlayer structure of CO and OH_ads species.     

Formation of a √3 × √3 surface on Si/Ge(1 1 1) studied by STM and LEED

We have performed a detailed study of the formation and the atomic structure of a √3 × √3 surface on Si/Ge(1 1 1) using both scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). Both experimental methods confirm the presence of a √3 × √3 periodicity but unlike the Sn/Ge(1 1 1) and the Sn/Si(1 1 1) surfaces, the Si/Ge(1 1 1) surface is not well ordered. There is no long range order on the surface and the √3 × √3 reconstruction is made up of double rows of silicon atoms separated by disordered areas composed of germanium atoms.     

Influence of surface band gaps on the lifetimes of charge transfer states

Using a first principles electronic structure method, we investigate how a band gap in the surface projected density of states of a noble metal influences the resonant tunneling lifetime of an atomic level near the surface. Comparing Li atoms outside Cu(1 1 1), where the Li 2s level is within the gap, with Cu(0 0 1), where the Li 2s level is below the gap, reveals that the lifetime of the ionization level of Li is longer on Cu(1 1 1). This difference is caused both by the decreased final state phase space for the tunneling electron on Cu(1 1 1) and by a reduction in intra-atomic hybridization in Li outside a surface whose band gap encompasses the ionization level. Our results are consistent with previous experiments and theory that predict a similar trend for the ionization level of Cs above Cu(1 1 1) and Cu(0 0 1).     

Mixed-valence states of 11, 1111-dialkyl- and 11, 1111-bis(methylbenzyl)biferrocenium triiodides

It was found that the packing of cations and anions influences the electronic structures of mixed-valence binuclear ferrocene derivatives. Temperature-dependence of the mixed-valence state of 1¹, 1¹¹¹-diisobutylbiferrocenium triiodide was observed in a crystalline state, whereas only a trapped-valence state was found in a dispersed state. The packing effect was also observed for a series of 1¹, 1¹¹¹-dialkyl- and 1¹, 1¹¹¹-bis(methylbenzyl)biferrocenium triiodides by means of ESR spectroscopy.     

Density functional theory investigation of CN on Cu(1 1 1), Ni(1 1 1) and Ni(1 0 0)

The adsorption of CN on Cu(1 1 1), Ni(1 1 1) and Ni(1 0 0) has been investigated using density functional theory (DFT). While experimental studies of CN on Cu(1 1 1) show the molecular axis to be essentially parallel to the surface, the normally-preferred DFT approach using the generalised gradient approximation (GGA) yields a lowest energy configuration with the C-N axis perpendicular to the surface, although calculations using the local density approximation (LDA) do indicate that the experimental geometry is energetically favoured. The same conclusions are found for CN on Ni(1 1 1); on both surfaces bonding through the N atom is always unfavourable, in contrast to some earlier published results of ab initio calculations for Ni(1 1 1)/CN and Ni(1 0 0)/CN. The different predictions of the GGA and LDA approaches may lie in subtly different relative energies of the CN 5σ and 1π orbitals, a situation somewhat similar to that for CO adsorbed on Pt(1 1 1) which has proved challenging for DFT calculations. On Ni(1 0 0) GGA calculations favour a lying-down species in a hollow site in a geometry rather similar to that found experimentally and in GGA calculations for CN on Ni(1 1 0).     

Highly stable passivation of a Si(1 1 1) surface using bilayer-GaSe

As a stable and ‘epitaxial’ passivation of a Si surface, we propose the bilayer-GaSe termination of a Si(1 1 1) surface. This surface is fabricated by depositing one monolayer of Ga on a clean Si(1 1 1) surface and subsequent annealing in a Se flux at around 520 °C, which results in unreconstructed 1×1 termination of the Si(1 1 1) surface by bilayer-GaSe. We found by scanning tunneling microscopy observation that slow cooling of the clean Si(1 1 1) surface from 850 to 520 °C with simultaneous deposition of a Ga flux results in better termination of the Si(1 1 1) surface. It was also found that this surface is stable against heating around 400 °C in O₂ atmosphere of 3×10⁻³ Pa. By utilizing these properties of the bilayer-GaSe terminated surface, we have succeeded in fabricating ZnO quantum dots on this substrate.     

Fabrication of nanostructures by selective growth of C60 and Si on Si(1 1 1) substrate

Using two types of selective growth, selective C₆₀ growth and selective Si growth, on a common Si(1 1 1) substrate, an array of C₆₀ nanoribbons with controlled values of width and thickness is fabricated. On a surface that has Si(1 1 1)√3 × √3R30°-Ag (referred to as Si(1 1 1)√3-Ag hereafter) and bare Si(1 1 1) regions at the same time, the preferential growth of C₆₀ multilayered film is recognized on the Si(1 1 1)√3-Ag region. The growth of Si selectively occurs on a bare Si(1 1 1) region if the substrate surface has C₆₀-adsorbed and bare Si(1 1 1) regions at the same time. As a demonstration of the use of these selective growths, we fabricate an array of well-isolated C₆₀ nanoribbons, which show a well-ordered molecular arrangement and have sizes of about 40 nm in widths and 3-4 nm in thicknesses.     

Growth of (√3 × √3)-Ag and (1 1 1) oriented Ag islands on Ge/Si(1 1 1) surfaces

We have studied the growth of Ag on Ge/Si(1 1 1) substrates. The Ge/Si(1 1 1) substrates were prepared by depositing one monolayer (ML) of Ge on Si(1 1 1)-(7 × 7) surfaces. Following Ge deposition the reflection high energy electron diffraction (RHEED) pattern changed to a (1 × 1) pattern. Ge as well as Ag deposition was carried out at 550 °C. Ag deposition on Ge/Si(1 1 1) substrates up to 10 ML has shown a prominent (√3 × √3)-R30° RHEED pattern along with a streak structure from Ag(1 1 1) surface. Scanning electron microscopy (SEM) shows the formation of Ag islands along with a large fraction of open area, which presumably has the Ag-induced (√3 × √3)-R30° structure on the Ge/Si(1 1 1) surface. X-ray diffraction (XRD) experiments show the presence of only (1 1 1) peak of Ag indicating epitaxial growth of Ag on Ge/Si(1 1 1) surfaces. The possibility of growing a strain-tuned (tensile to compressive) Ag(1 1 1) layer on Ge/Si(1 1 1) substrates is discussed.     

Electrodeposition of epitaxial nickel films on GaAs

The structural and magnetic properties of Ni films grown by electrodeposition from simple sulfate solutions directly onto the (0 0 1) and (0 1 1) surfaces of n-GaAs have been studied. In-plane X-ray diffraction has been used to show that Ni grows on (0 0 1) GaAs with two different preferred epitaxial relationships: (1) perpendicular to plane (0 0 1)_Ni(0 0 1)_GaAs and preferred orientation in-plane [1 0 0]_Ni[1 1 0]_GaAs and (2) perpendicular to plane (0 1 1)_Ni(0 0 1)_GaAs and preferred orientation in-plane [1 1 1]_Ni[1 1 0]_GaAs. Nickel films grown on (0 1 1) n-GaAs show only a single preferred growth relationship: perpendicular to plane (1 1 1)_Ni(0 1 1)_GaAs and in-plane [1 1 0]_Ni[1 1 0]_GaAs. The magnetic properties were strongly dependent on the substrate orientation. The films grown on GaAs (0 0 1) showed a small but definite four-fold magnetic anisotropy in plane with the highest remanence being found along the GaAs [1 0 0] direction. In contrast, the Ni films grown on the (0 1 1) GaAs showed a pronounced uniaxial anisotropy with an anisotropy field of approximately 500 Oe.     

Surface composition and structure of palladium ultra-thin films deposited on Ni(1 1 1)

Ultra-thin palladium films deposited on the Ni(1 1 1) surface were characterized by X-ray photoelectron spectroscopy (XPS), low-energy electron diffraction (LEED) and X-ray photoelectron diffraction (XPD). For low coverage, LEED shows a (1 × 1) pattern similar to that of the substrate. For intermediate coverage, the LEED pattern displays extra spots around the main (1 × 1) spots, resembling a Moiré coincidence pattern, probably associated with the formation of Pd bi-dimensional islands oriented in different directions on the Ni(1 1 1) surface. The results obtained by XPS and XPD corroborate this finding. The LEED pattern displays this structure up to 500 °C. Annealing at 650 °C brings back the (1 × 1) pattern, which is associated with a Pd island coalescence and alloy formation by Pd diffusion in the first atomic layers of the Ni(1 1 1). In this paper we present a detailed study of this surface structure via a comparison between XPD experiment and theory.     

Structure and adhesion of MoSi2/Ni interfaces: Evaluation of MoSi2 as an alternative bond coat alloy

We use density functional theory to evaluate the stability of molybdenum disilicide coatings on a nickel substrate, as a possible bond coat alloy for high temperature coating applications. We consider the MoSi₂(0 0 1)/Ni(1 1 1), MoSi₂(1 0 0)/Ni(1 1 1), and MoSi₂(1 1 0)/Ni(1 1 1) interfaces and predict quite strong (3.5-3.8 J/m²) adhesion of this metal-silicide ceramic to nickel. The origin of this strong adhesion is elucidated by examining the geometric and electronic structure of the interfaces. We predict that Mo and Si atoms at the interface primarily occupy Ni 3-fold hollow sites, the typical adsorption site on Ni(1 1 1). Projected local densities of states and electron density difference plots reveal a mixture of localized, covalent Si-Ni bonds and more delocalized metallic Mo-Ni bonding, as the origin of the strong interfacial bonding. As emphasized in our earlier work, creation of strong covalent bonds at interfaces results in very strong adhesion. Such strong adhesion makes MoSi₂ a potential candidate for use in thermal barrier applications, in conjunction with a yttria-stabilized zirconia topcoat.     

Electronic properties of thin Zn layers on Pd(1 1 1) during growth and alloying

The growth and alloying of thin Zn layers on Pd(1 1 1) was investigated using X-ray and ultraviolet photoelectron spectroscopy as well as low energy electron diffraction and correlated with density functional calculations. At 105 K, the formation of a pseudomorphic Zn monolayer is observed. Upon heating this layer to 550 K or upon deposition of 1 ML at 550 K, an ordered p(2 × 1) PdZn surface alloy with a Pd:Zn ratio of ∼1:1 is formed, with a characteristic Pd 3d_5/2 peak at a binding energy of ∼335.6 eV. For deposition of 3 ML Zn at 550 K or by heating 3 ML, deposited at low temperature, to 500 or 600 K, a PdZn alloy with a Pd:Zn ratio of again ∼1:1 is found in the surface region, with a Pd 3d_5/2 peak at ∼335.9 eV; the direct preparation at 550 K leads to a more homogeneous and better ordered alloy. The valence band spectrum of this alloy with a low density of states at the Fermi level and pronounced maxima due to the “Pd 4d” band at ∼2.4 and 3.9 eV closely resembles the spectrum of Cu(1 1 1), in good agreement with the calculated density of states for a PdZn alloy of 1:1 stoichiometry. The shift of the “Pd 4d” band to higher binding energies as compared to Pd(1 1 1) indicates a charge transfer from Zn to the Pd 4d levels. Overall, the similarity between the ultraviolet photoelectron spectra for the PdZn alloy and for Cu(1 1 1) is taken as explanation for the similar chemical activity of both systems in methanol steam reforming.     

Crystalline orientation effects on conical structure formation in femtosecond laser irradiation of silicon and germanium

Irradiation of Si(1 0 0), Si(1 1 1), Si(1 1 0), Ge(1 0 0), and Ge(1 1 1) is compared for 150 fs, 800 nm wavelength pulses in a rough vacuum atmosphere. The surface crystalline orientation of the material is found to affect the final morphology, with (1 1 1)- and (1 1 0)-surface orientations exhibiting a much higher tendency for conical structure formation under multiple-pulse irradiation. Using cross-sectional transmission electron microscopy, the structures on Si(1 1 1) are found to have primarily crystalline cores with the same crystalline orientation as the substrate. The results show that the crystalline orientation of the target should be considered in laser machining applications.     

DFT study of Ni-CeO2 interaction: Adsorption and insertion

DFT-GGA calculations are used to investigate interaction of atomic nickel with ceria. Nickel adsorption on surfaces is compared with insertion into the bulk and subsurfaces using VASP calculations. The adsorption is considered upon the (1 1 1) and (1 1 0) surfaces of ceria since these surfaces are the most stable ones being formally generated from the least number of bond cleavages (one or two Ce-O bonds per Ce, respectively). When Ni atom is adsorbed on the (1 1 1) surface, it occupies a position atop whereas over the (1 1 0) surface it occupies a bridging position. The adsorption quenches the spin. Results for insertion both in the bulk material and in the (1 1 1) and (1 1 0) subsurfaces are presented. For the bulk, it is shown that an increase of Ni amount from 1/4 to 1 makes insertion more exothermic. The later is accompanied by a lattice expansion and a reduction of symmetry. For an amount 1/4, the Ni is inserted to a tetrahedral site. At larger concentration, it is in trigonal environment of three oxygen atoms, additional oxygen ligands being less tightly bound. For insertion in the sublayers of the (1 1 1) subsurface, the nickel atom occupies a similar position, also a ternary site. The interaction energy for nickel atom insertion is comparable to that for nickel adsorption, slightly larger for (1 1 1), slightly smaller for (1 1 0) surface. Diffusion into the bulk is thus likely. When inserted, the distance Ni-Ce is becomes short, 2.70 Å, in agreement with experiment and the system may evolve with the formation of a Ni₂Ce alloy.     

Growth and morphology of the epitaxial Fe(1 1 0)/MgO(1 1 1)/Fe(1 1 0) Trilayers

Growth and surface morphology of epitaxial Fe(1 1 0)/MgO(1 1 1)/Fe(1 1 0) trilayers constituting a magnetic tunnel junction were investigated by low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). STM reveals a grain-like growth mode of MgO on Fe(1 1 0) resulting in dense MgO(1 1 1) films at room temperature as well as at 250 °C. As observed by STM, initial deposition of MgO leads to a partial oxidation of the Fe(1 1 0) surface which is confirmed by Auger electron spectroscopy. The top Fe layer deposited on MgO(1 1 1) at room temperature is relatively rough consisting of clusters which can be transformed by annealing to an atomically flat epitaxial Fe(1 1 0) film.     

Generation-by-generation dissection of the response function in long memory epidemic processes

In a number of natural and social systems, the response to an exogenous shock relaxes back to the average level according to a long-memory kernel ~1/t^1+θ with 0 ≤ θ < 1. In the presence of an epidemic-like process of triggered shocks developing in a cascade of generations at or close to criticality, this “bare” kernel is renormalized into an even slower decaying response function ~1/t^1-θ. Surprisingly, this means that the shorter the memory of the bare kernel (the larger 1+θ), the longer the memory of the response function (the smaller 1-θ). Here, we present a detailed investigation of this paradoxical behavior based on a generation-by-generation decomposition of the total response function, the use of Laplace transforms and of “anomalous” scaling arguments. The paradox is explained by the fact that the number of triggered generations grows anomalously with time at ~ t^θ so that the contributions of active generations up to time t more than compensate the shorter memory associated with a larger exponent θ. This anomalous scaling results fundamentally from the property that the expected waiting time is infinite for 0 ≤ θ ≤ 1. The techniques developed here are also applied to the case θ > 1 and we find in this case that the total renormalized response is a constant for t < 1/(1-n) followed by a cross-over to ~1/t^1+θ for t ≫ 1/(1-n).     

Leed,aes and photoemission measurements of epitaxially grown GaAs(001), (111)A and (1̄1̄1̄)B surfaces and their behaviour upon cs adsorption

Epitaxially grown GaAs(001), (111) and (1?1?1?) surfaces and their behaviour on Cs adsorption are studied by LEED, AES and photoemission. Upon heat treatment the clean GaAs(001) surface shows all the structures of the As-stabilized to the Ga-stabilized surface. By careful annealing it is also possible to obtain the As-stabilized surface from the Ga-stabilized surface, which must be due to the diffusion of As from the bulk to the surface. The As-stabilized surface can be recovered from the Ga-stabilized surface by treating the surface at 400°C in an AsH₃ atmosphere. The Cs coverage of all these surfaces is linear with the dosage and shows a sharp breakpoint at 5.3 × 10¹⁴ atoms cm^?2. The photoemission reaches a maximum precisely at the dosage of this break point for the GaAs(001) and GaAs(1?1?1?) surface, whereas for the GaAs(111) surface the maximum in the photoemission is reached at a higher dosage of 6.5 × 10¹⁴ atoms cm^?2. The maximum photoemission from all surfaces is in the order of 50μA Im^?1 for white light (T = 2850 K). LEED measurements show that Cs adsorbs as an amorphous layer on these surfaces at room temperature. Heat treatment of the Cs-activated GaAs (001) surface shows a stability region of 4.7 × 10¹⁴ atoms cm^?2 at 260dgC and one of 2.7 × 10¹⁴ atoms cm^?2 at 340°C without any ordering of the Cs atoms. Heat treatment of the Cs-activated GaAs(111) crystal shows a gradual desorption of Cs up to a coverage of 1 × 10¹⁴ atoms cm^?2, which is stable at 360°C and where LEED shows the formation of the GaAs(111) (√7 × √7)Cs structure. Heat treatment of the Cs-activated GaAs(1?1?1?) crystal shows a stability region at 260°C with a coverage of 3.8 × 10¹⁴ atoms cm^?2 with ordering of the Cs atoms in a GaAs(1?1?1?) (4 × 4)Cs structure and at 340°C a further stability region with a coverage of 1 × 10¹⁴ at cm^?2 with the formation of a GaAs(1?1?1?) (√21 × √21)Cs structure. Possible models of the GaAs(1?1?1?) (4 × 4)Cs, GaAs(1?1?1?)(√21 × √21)Cs and GaAs(111) (√7 × √7)Cs structures are given.