Ultraviolet photovoltaic characteristic of MgB2 thin film

Fast photoelectric effects have been observed in MgB₂ thin film fabricated by chemical vapour deposition. The rise time was $\sim $10 ns and the full width at half-maximum was \sim185\,ns for the photovoltaic pulse when the film was irradiated by a 308\,nm laser pulse of 25\,ns in duration. X-ray diffraction and the scanning electron microscope revealed that the film was polycrystalline with preferred c-axis orientation. We propose that nonequilibrium electron--hole pairs are excited in the grains and grain boundary regions for MgB₂ film under ultraviolet laser and then the built-in electric field near the grain boundaries separates carriers, which lead to the appearance of an instant photovoltage.     

Electronic Structural Properties and Superconductivity of Diborides in the MgB2 Structure

We calculate the critical temperature Tc of a wide range of diborides which have the same crystal structure as MgB2.Their electronic structure is also calculated in the framework of the local density approximation method of density functional theory be using the pseudopotential plane wave approach.The Hopfield factors η of these materials are calculated by the frozen phonon method.Our results show that most of these diborides have low η,and hence low or no Tc;this is consistent with experimental observations.The most important result of our calculation is that AgB2 and AuB2 have higher Tc than MgB2.The high Tc of these two materials comes from the combination of the high density of states and high deformation potential of the σ bands.     

Micro—structural analysis of YBa2Cu3O7—x thin films grown on different substrates by X—ray techniques

YBa2Cu3Ox(YBCO) thin films grown on different substrates with and/or without Eu2CuO4(ECO) buffer layer were investigated by X-ray wide angle diffraction,reflection,diffuse scattering and topography.Theresults show that for the yttria stabilized ZrO2(YSZ) substrate,the presence of an ECO buffer layer improves the crystalline quality of the YBCO film,while a negative effect is observed for the SrTiO3(STO) substrate.The lateral correlation length for a sample grown on a YSZ substrate with ECO buffer Layer is much greater than grown on an STO subetrate.The STO substrate used has mosaic structure.2001 Elsevier Science B.V.All rights reserved.     

Superconducting Properties of MgB2 with Different Lattice Parameters

We investigate the elecronic structures and superconductivities of new superconductor MgB2 with different lattice parameters by means of multiple-Scattered-Xa calculation.It is shown that the lattice parameters have great effect on the superconductivity of MgB2.The results of this paper show that the density of states at the Fermi level decreases with the decreasing lattice parameters.The effects are very more sensitive substantially to the change of the lattice parameter a as compared with that of the lattice paramter c.Correspondingly.the superconducting transition temperature TC decreases correspondingly mainly with deceasing the lattice parameter a .Our results are in good agreement with the experiments.     

Small angle x—ray scattering study on the conformation of polystyrene in toluene during adding anti—solvent CO2

The conformatiopn of polystyrene in the anti-solvent process of supercritical fluids(compressed CO2 polystyrene toluene)has been studied by small angle x-ray scattering with synchrotron radiation as an x-ray source.Coilto-globule transformation of the polystyrene chain was observed with the increase of the anti-solvent CO2 pressure;i.e.polystrene coiled at a prssure lower than the cloud point pressure(Pc)and turned into a globle with a uniform density at pressures higher than Pc.Fractal behaviour was also found in the chain contraction.and the mass fractal dimension increased with increasing CO2 pressure.     

MgB2超导线I-V曲线的测量

2001年1月MgB2的超导电性被发现以来,这种临界温度达到40 K左右的超导材料引起了国际超导界广泛的兴趣,短时间内就对其进行了深入的研究.MgB2属于传统的电子-声子耦合的BCS超导体,它的临界温度大于或者接近BCS理论所预言的临界温度的上限,因此,这种材料在理论研究上具有重要的意义.本文对MgB2超导线的I-V关系进行了初步的测量,我们测量的超导线样品的MgB2层厚度大约只有0.5μm,截面积约1.5×10-6cm2,实验得到了许多有意义的实验结果.     

The microwave response of MgB2 /Al2O3 superconducting thin films

Microwave characteristics of MgB2/Al2O3 superconducting thin films were investigated by coplanar resonator technique. The thin films studied have different grain sizes resulting from different growth techniques. The experimental results can be described very well by a grain-size model which combines coplanar resonator theory and Josephson junction network model. It was found that the penetration depth and surface resistance of thin films with smaller grain sizes are larger than those of thin films with larger grain sizes.     

Positive deviation from debye‘s theory in small—angle x—ray scattering

The small-angle x-ray scattering (SAXS) resulting from a non-ideal two-phase system having sharply defined phase boundaries but with micro-fluctuations of electron density within any phase shows a positive deviation from Debye's theory. We have found a simple method suitable for fitting the slit-smeared SAXS data and correcting the positive deviation. The validity of this procedure is tested on porous ZrO_2 xerogel prepared using the sol-gel process.     

MgB2超导体的同位素效应

本基于双带模型，通过引入非电子—声子相互作用并利用自洽近似方法在贴理论框架内讨论了硼化镁超导体的同位素效应，并探讨了非电子。声子相互作用对体系超导电性的作用。     

在多晶Al2O3衬底上化学气相沉积MgB2超导薄膜

报道了制备MgB2超导薄膜的一种新方法和测量结果，MgB2超导薄膜的制备采用的是两步异位退火方法，但在现有报道的方法不同的是，制备硼（B）先驱膜采用的是化学气相沉积方法，在460℃温度下热分解乙硼烷（B2H6）沉积的，然后镁（Mg）蒸气中分别在730℃、780℃和830℃条件下退火，生成MgB2超导薄膜，扫描电子显微镜观察表明制备薄膜是多晶的，MgB2晶料小于2μm。X衍射分析发现所生长的薄膜是随机取向的。800℃条件下退火生成的MgB2超导薄膜起始转变温度和零电阻温度分别达到35K和24K，结果表明，采用B2H6热分解化学气相沉积B先驱膜的方法在优化的沉积条件和退火条件下可制备高质量的MgB2超导薄膜，我们这种化学气相沉积MgB2超导薄膜方法在大面积的MgB2超导薄膜制备方面较脉冲激光沉积方法具有优势，并且与现有的半导体工艺技术相兼容，有利用实现MgB2超导薄膜在电子器件方面的应用。     

AFM analysis of MgB2 films and nanostructures

For the fabrication of superconducting devices based on nanostructured thin films, the quality of the starting surface is often of crucial importance. For example, the transport properties of superconducting nanobridges are strongly affected by the geometry and the edge definition of the nanostructures. In this work, we report about AFM characterization of magnesium diboride films and nanobridges fabricated in view of application in superconducting electronics. MgB₂ films, obtained by co-deposition method followed by annealing in situ on silicon nitride substrate, have been nanostructured by electron beam lithography and ion milling. The analysis of the AFM images by the height-height correlation function shows that the films have a self-affine smooth textured surface with a RMS roughness of 20 nm. Furthermore, the nanobridges are continuous, with a well-defined geometry and a rounded profile, and the nanostructuration process does not significantly affect the film morphology.     

STRUCTURE AND SUPERCONDUCTIVITY OF Mg(B1-xCx)2 COMPOUNDS

In this paper, we report on the structural properties and superconductivity of Mg(B_1-xC_x)₂ compounds. Powder X-ray diffraction results indicate that the samples crystallize in a hexagonal AlB₂-type structure. Due to the chemical activity of Mg powders, a small amount of MgO impurity phase is detected by X-ray diffraction. The lattice parameters decrease slightly with the increasing carbon content. Magnetization measurements indicate that the non-stoichiometry of MgB₂ has no influence on the superconducting transition temperature and the transition temperature width. The addition of carbon results in a decrease of T_c and an increase of the superconducting transition width, implying the loss of superconductivity.     

STRUCTURE AND SUPERCONDUCTIVITY OF Mg1-xLixB2

The effects of the substitution of Li for Mg in Mg_1-xLi_xB₂(x=0,0.1,0.2) on their structure and superconductivity have been investigated. It has been found by X-ray diffraction that the substitution of Li for Mg with x=0.1 and 0.2 does not cause phase transformation in these samples. However,the measurements of temperature-dependent normalized magnetization indicate the loss of superconductivity with the increase of Li content in these samples.     

Superconductivity in porous MgB2

Porous magnesium diboride samples have been prepared by the heat treatment of a pressed mixture of Mg and MgB₂ powders. It was found that linked superconducting structure is formed down to the minimum normalized density γ_c=d/d₀≅0.16 (percolation threshold), where d is the density of MgB₂ averaged over the sample, d₀=2.62 g/cm³ is the X-ray density. Lattice parameters and critical temperature of the porous sample decrease with increasing porosity (decreasing γ) and T_c2≅32 K is minimal at γ_c. The grain boundaries in the porous samples are transparent for the current and J_c∼3×10⁵ A/cm² in self field at T=20 K in the samples with γ∼0.24.     

Core level photoemission study of polycrystalline MgB2

X-ray photoemission measurements have been made on Mg 2p and B 1s core levels from MgB₂ as well as on the O 1s core level from the contaminant oxygen. The motivation for this study came for the discrepancy in the reported papers on the energy values of the B 1s and Mg 2p core levels, ostensibly due to the oxygen, present as an impurity, reacting and forming oxides and other compounds. Sputtering leads to a significant reduction of oxygen on and in the sample. The in situ sputter-cleaned sample gives the best results. The measurements are compared with results reported earlier and discrepancies discussed.     

Laser induced photovoltages in B-riched MgB2 thin films

Ultrafast photoelectric effects have been observed in MgB₂ thin films fabricated by chemical vapor deposition on MgO (1 1 1) substrates. The rise time and full width at half-maximum of the photoresponse pulse signals were about 2.4 and 4 ns under the irradiation of a 248 nm laser pulse of 20 ns in duration through the MgO substrate at ambient temperature without any bias. Furthermore, the signal polarity is directly bound up with the laser illumination positions, while no photovoltage was observed when the MgO (1 1 1) single crystal was irradiated. The inner origin mechanism of the present positions-dependent photovoltaic response was discussed.     

Laser-induced thermoelectric voltage in normal state MgB2 thin films

Laser-induced voltage has been observed in c-axis oriented MgB₂ thin film at room temperature. The amplitude of the signal is approximately proportional to the film thickness. For the film with the thickness of 150 nm, a very fast response has been detected when the film was irradiated by a 308 nm pulsed laser of 20 ns duration. The rise time and full width at half-maximum of the signal are about 3 and 25 ns, respectively. The physical origin of the laser-induced voltage can be attributed to a transverse thermoelectricity due to the anisotropic thermopower in MgB₂.     

关于MgB2/Al2O3超导薄膜电阻转变和各向异性的研究

利用电子束蒸发方法将MgB₂超导薄膜沉积到Al₂O₃(001)衬底上.采用标准的四引线法研究了磁场平行和垂直超导薄膜ab平面下的电阻转变.一个激活能模型 U(T,H)=U₀(1-T/(T_c+δ))ⁿ(1-H/H 关键词： 2/Al₂O₃')" href="#">MgB₂/Al₂O₃ 超导体 电阻转变 各向异性     

Scaling behavior of mixed-state hall effect in MgB2 thin films

The Hall resistivity (ρ_xy) and the longitudinal resistivity (ρ_xx) in c-axis-oriented superconducting MgB₂ thin films have been investigated in extended fields up to 18 T. We have observed a scaling behavior between the Hall resistivity and the longitudinal resistivity, , where the exponent (β) is observed to be independent of the temperatures and the magnetic fields. For a wide magnetic field region from 1 to 18 T and a wide temperature region from 10 to 28 K, a universal power law with β = 2.0 ± 0.1 was observed in c-axis-oriented MgB₂ thin films. These results can be well interpreted by using recent models.