具有垂直各向异性(Pt/Co)n/FeMn多层膜的交换偏置

采用磁控溅射方法制备了以Pt为缓冲层和保护层的具有垂直各向异性(Pt/Co)n/FeMn多层膜.研究结果表明,多层膜的垂直交换偏置场Hex和反铁磁层厚度的关系与其具有平面各向异性的交换偏置场随反铁磁层厚度变化趋势相近.随着铁磁层调制周期数的增加,垂直交换偏置场Hex相应减小,并且与铁磁层的调制周期数近似成反比关系.(Pt/Co)3/FeMn的垂直交换偏置场Hex已经达到22.3kA/m.为了进一步提高Hex,在Co/FeMn的界面插入Pt层,当Pt层厚度为0.4nm时,Hex达到最大值39.8kA/m.     

Pt插层对Co/FeMn界面的影响

采用磁控溅射的方法制备了Co/FeMn/Co多层膜,研究了Co（底部）/FeMn和FeMn/Co（顶部）界面插入Pt层后磁矩的变化情况．通过测量磁滞回线可知,Co（底部）/FeMn界面的Pt插层改变了体系的饱和磁化强度Ｍ_s,随着Co层厚度（t_Co）的增加Ｍ_s不断趋近于Co块体结构理论值1440 kA/m．这是因为Co（底部）/FeMn界面产生了净磁矩,而界面处的Pt插层可以减少这种净磁矩的产生．但是 关键词： 磁性多层膜 垂直磁各向异性 交换耦合     

CoFeB/Pt多层膜的垂直磁各向异性研究

具有垂直磁各向异性的磁性纳米结构是自旋转移力矩器件的重要研究内容, 本文采用反常霍尔效应系统地研究了磁控溅射法制备的[CoFeB/Pt]_n多层膜的垂直磁各向异性. 当CoFeB的厚度小于0.6 nm时, 可以在[CoFeB/Pt]_n多层膜中观察到清晰的垂直磁各向异性, 其垂直磁各向异性强烈依赖于CoFeB和Pt层厚度及多层膜周期数. 当多层膜周期数n ≥ 5时, 出现零剩磁现象. 另外, [CoFeB/Pt]_n多层膜的矫顽力均小于2 kA·m^-1, 有望作为垂直自由层的重要侯选材料应用于垂直磁纳米结构中.     

电流焦耳热调控反转型垂直(Co/Pt)n/Co/IrMn纳米多层膜结构的交换偏置效应研究

交换偏置效应影响磁敏传感器中的关键性能参数.在外加磁场辅助下,本文提出一种电流产生的焦耳热调控交换偏置效应的研究方法.通过该方法,系统调控了反转型垂直纳米多层膜结构(Co/Pt)_n/Co/IrMn(简称垂直多层膜结构,n+1是Co层周期数)的面内交换偏置效应,不仅连续改变了交换偏置场H_eb大小,而且实现了H_eb的翻转.在垂直多层膜结构中,如果固定外加磁场H_p(脉冲电流I_DC)后连续改变I_DC(H_p)的大小可以连续调控H_eb的数值;如果固定H_p(I_DC)后同时改变I_DC(H_p)的大小和方向,则在较大I_DC时可实现H_eb的翻转.结果表明,该方法可以用来原位调控磁敏传感器的线性磁场范围和灵敏度等关键性能参数,对磁敏传感器的优化研究具有重要的借鉴意义.     

Co/Ni多层膜垂直磁各向异性的研究

采用直流磁控溅射法在玻璃基片上制备了Pt底层的Co/Ni多层膜样品, 对影响样品垂直磁各向异性的各因素进行了调制, 通过样品的反常霍尔效应系统的研究了Co/Ni多层膜的垂直磁各向异性. 结果表明, 多层膜中各层的厚度及周期数对样品的反常霍尔效应和磁性有重要的影响. 通过对多层膜各个参数的调制优化, 最终获得了具有良好的垂直磁各向异性的Co/Ni多层膜最佳样品Pt(2.0)/Co(0.2)/Ni(0.4)/Co(0.2)/Pt(2.0), 经计算, 该样品的各向异性常数K_eff 达到了3.6×10⁵ J/m³, 说明样品具备良好的垂直磁各向异性. 最佳样品磁性层厚度仅为0.8 nm, 样品总厚度在5 nm以内, 可更为深入的研究其与元件的集成性.     

MgO/Pt界面对增强Co/Ni多层膜垂直磁各向异性及热稳定性的研究

采用直流磁控溅射法在玻璃基片上制备了Pt底层和MgO/Pt双底层的Co/Ni多层膜样品, 通过反常霍尔效应研究了不同MgO厚度和退火温度对样品垂直磁各向异性(perpendicular magnetic anisotropy, PMA)的影响. 随着底层中MgO厚度的逐渐增加, 样品的矫顽力也随之增强, 霍尔电阻变化不大; 对样品进行退火处理后发现, 单纯Pt底层的Co/Ni多层膜随着退火温度的升高, 霍尔电阻逐渐降低, 矫顽力则迅速降低, 热稳定性较差; 而当MgO/Pt双底层的样品在200 ℃退火后矫顽力大幅增加, 霍尔电阻略微有所减小, 更高的退火温度使得Co和Ni合金化, 导致多层膜的PMA特征减弱.     

Co-Ni/FeMn双层膜中磁化强度对交换偏置的影响

固定CoNiFeMn双层膜中反铁磁层的厚度,改变CoNi铁磁层的成分来调节磁化强度,从而研究铁磁层的饱和磁化强度对CoNiFeMn双层膜中交换偏置的影响.研究表明,CoNiFeMn界面的交换耦合能U不是一个常量,而是随(MFM)12的增加而线性增加.其原因是铁磁层磁矩通过界面相互作用在反铁磁层中形成的局域交换磁场,在磁场冷却时影响反铁磁层的自旋结构或磁畴结构及双层膜中的交换偏置 关键词： 交换偏置 磁化强度     

多层膜［Co85Cr15/Pt］20的磁性、垂直磁记录特性和微结构的关系

采用磁控溅射法制备了性能优良的以Pt为缓冲层的［Co85₈₅Cr15_{15/Pt］2020 多层膜，研究了溅射气压对［Co8585Cr1515/Pt］2020多层膜微结构和磁性的 影响.研究结果表明，Ar溅射气压对［Co8585Cr1515/Pt］2020多层膜的微结构 、垂直磁各向异性和矫顽力有重要的影响 关键词： 溅射气压 多层膜 垂直磁各向异性 有效磁各向异性常数}     

Co/CoO双层膜的各向异性磁电阻与交换偏置行为研究

本文系统研究了Co/CoO双层膜的各向异性磁电阻(AMR)与交换偏置行为,并给出了外加微扰场对交换偏置磁锻炼效应恢复程度影响的实验结果.结果表明磁锻炼效应发生后,施加0.15T的倾斜微扰场可致使铁磁畴分裂进而诱导磁锻炼效应的恢复,揭示磁锻炼效应恢复程度与微扰场的角度有紧密关联.在微扰场作用下FM自旋在两个方向分裂,一部分自旋沿微扰场方向,另一部则被冷却场的AFM自旋钉扎住而沿原来方向不变.当微扰场和冷却场夹角大于30°时,FM畴被分裂,磁锻炼效应开始恢复,表明一个磁畴内的铁磁自旋偏离夹角最大为30°,而磁锻炼效应发生后,部分AFM自旋偏离冷却场方向的角度则小于30°,实验结果与相应的理论计算结果一致.此外,恢复程度随微扰场角度的增加而增加,最大恢复程度时角度为90°.同时,磁锻炼效应的恢复增加了交换偏置值,为器件设计提供理论支持,在自旋电子学基础和应用研究方面具有重要的指导意义.     

(Ni0.81Fe0.19)1-xCrx作为种子层对NiFe/FeMn交换偏置的影响

采用一种新的种子层材料:(Ni081Fe019)1-xCrx,通过改变种子层中Cr原子的含量,使得在其上生长的NiFeFeMn双层膜的织构和晶粒尺寸产生极大的差异,系统研究了NiFeFeMn双层膜中FeMn晶粒尺寸和织构对交换偏置的影响.实验结果表明,在FeMn的γ相(111)织构较好的前提下,交换偏置场的大小与织构的差异没有关系;FeMn的晶粒尺寸对交换偏置场有很大影响,较小的反铁磁层晶粒对交换偏置场有利,过大的反铁磁层晶粒不利于交换偏置场.将(Ni081Fe019)05Cr05与传统的种子层材料Ta进 关键词： 交换偏置 晶粒尺寸 织构 种子层     

Thickness-dependent magnetic properties in Pt/[Co/Ni]n multilayers with perpendicular magnetic anisotropy

We systematically investigated the Ni and Co thickness-dependent perpendicular magnetic anisotropy (PMA) coefficient, magnetic domain structures, and magnetization dynamics of Pt(5 nm)/[Co($t_{\rm Co}$)/Ni($t_{\rm Ni}$)]$_{5}$/Pt(1 nm) multilayers by combining the four standard magnetic characterization techniques. The magnetic-related hysteresis loops obtained from the field-dependent magnetization $M$ and anomalous Hall resistivity (AHR) $\rho_{{xy}}$ showed that the two serial multilayers with $t_{\rm Co} = 0.2$ nm and 0.3 nm have the optimum PMA coefficient $K_{\rm U}$ as well as the highest coercivity $H_{\rm C}$ at the Ni thickness $t_{\rm Ni}= 0.6 $ nm. Additionally, the magnetic domain structures obtained by magneto-optic Kerr effect (MOKE) microscopy also significantly depend on the thickness and $K_{\rm U}$ of the films. Furthermore, the thickness-dependent linewidth of ferromagnetic resonance is inversely proportional to $K_{\rm U}$ and $H_{\rm C}$, indicating that inhomogeneous magnetic properties dominate the linewidth. However, the intrinsic Gilbert damping constant determined by a linear fitting of the frequency-dependent linewidth does not depend on the Ni thickness and $K_{\rm U}$. Our results could help promote the PMA [Co/Ni] multilayer applications in various spintronic and spin-orbitronic devices.     

Perpendicular magnetization and exchange bias in epitaxial NiO/[Ni/Pt]2 multilayers

The realization of perpendicular magnetization and perpendicular exchange bias(PEB)in magnetic multilayers is important for the spintronic applications.NiO(t)/[Ni(4 nm)/Pt(1 nm)]₂multilayers with varying the NiO layer thickness t have been epitaxially deposited on SrTiO;(001)substrates.Perpendicular magnetization can be achieved when t<25 nm.Perpendicular magnetization originates from strong perpendicular magnetic anisotropy(PMA),mainly resulting from interfacial strain induced by the lattice mismatch between the Ni and Pt layers.The PMA energy constant decreases monotonically with increasing t,due to the weakening of Ni(001)orientation and a little degradation of the Ni–Pt interface.Furthermore,significant PEB can be observed though NiO layer has spin compensated(001)crystalline plane.The PEB field increases monotonically with increasing t,which is considered to result from the thickness dependent anisotropy of the NiO layer.     

Magnetic properties of a Pt/Co2FeAl/MgO structure with perpendicular magnetic anisotropy

Microstructures and magnetic properties of Ta/Pt/Co 2 FeAl（CFA）/MgO multilayers are studied to understand perpendicular magnetic anisotropy（PMA） of half-metallic full-Heusler alloy films.PMA is realized in a 2.5-nm CFA film with B2-ordered structure observed by a high resolution transmission electron microscope.It is demonstrated that a high quality interface between the ferromagnetic layer and oxide layer is not essential for PMA.The conversions between in-plane anisotropy and PMA are investigated to study the dependence of magnetic moment on temperature.At the intersection points,the decreasing slope of the saturation magnetization（M s） changes because of the conversions.The dependence of M s on the annealing temperature and MgO thickness is also studied.     

Ultrathin (CoFe/Pt)n multilayers with tuned magnetic properties

Perpendicular magnetic anisotropy (PMA) has been investigated in ultrathin (CoFe [0.2] nm/Pt [0.2] nm)_n multilayers. The Pt layers show an fcc crystal structure with a preferred [111] orientation. The multilayers with n=3, 4 show PMA in the as-grown state, which can be enhanced by thermal annealing. However, no PMA is observed in the as-grown state with higher repetitions (n>&=5), although it is observed after thermal annealing. For 1=&<n=&<8, the anisotropy energy is around 10⁵ J/m³ for all (CoFe [0.2]/Pt [0.2])_n stacks. The perpendicular anisotropy is related to layer thickness and interface roughness.