Synthesis of GaN Nanorods by Ammoniating Ga2O3/ZnO Films

Large quantities of CaN nanorods are successfully synthesized on Si（111） substrates by ammoniating the films of Ga2O3/ZnO at 950℃ in a quartz tube. The structure, morphology and optical properties of the as-prepared CaN nanorods are studied by x-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, Fourier transform infrared spectroscopy, and photoluminescence. The results show that the CaN nanorods have a hexagonal wurtzite structure with lengths of several micrometres and diameters from 80 nm to 300hm, which could supply an attractive potential to harmonically incorporate future GaN optoelectronic devices into Si-based large-scale integrated circuits. The growth mechanism is also briefly discussed.     

Growth of Indium Nanorods by Magnetron Sputtering

Indium nanorods are grown on silicon substrates by using magnetron-sputtering technique. Film morphologies and nanorod microstructure are investigated by using scanning electron microscopy, high-resolution transmission electron microscopy （HRTEM）, and x-ray diffraction. It is found that the mean diameter of the nanorods ranges from 30nm to 100nm and the height ranges from 30nm to 200nm. The HRTEM investigations show that the indium nanorods are single crystals and grow along the [100] axis. The nanorods grow from the facets near the surface undulation that is caused by compressive stress in the indium grains generated during grain coalescence process. For low melting point and high diffusivity metal, such as bismuth and indium, this spontaneous nanorod growth mechanism can be used to fabricate nanostructures.     

Fabrication of Mn-Doped GaN Nanobars

We report a new method for large-scale production of GaMnN nanobars, by ammoniating Ga2O3 films doped with Mn under flowing ammonia atmosphere at 1000oC. The Mn-doped GaN sword-like nanobars are a single-crystal hexagonal structure, containing Mn up to 5.43 atom%. Thickness is about 100 nm and with a width of 200-400 nm. The nanobars are characterized by x-ray diffraction, scanning electron microscopy, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and photoluminescence. The GaN nanobars show two emission bands with a well-defined PL peak at 388 nm and 409 nm respectively. The large distinct redshift （409 nm） are comparable to pure GaN（370 nm） at room temperature. The red-shift photoluminescence is due to Mn doping. The growth mechanism of crystalline GaN nanobars is discussed briefly.     

Growth of β-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate

This paper reports that/3-Ga2O3 nanorods have been synthesized by ammoniating Ga2O3 films on a V middle layer deposited on Si（111） substrates. The synthesized nanorods were confirmed as monoclinic Ga2O3 by x-ray diffraction,Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy reveal that the grown β-Ga2O3 nanorods have a smooth and clean surface with diameters ranging from 100 nm to 200 nm and lengths typically up to 2μm. High resolution TEM and selected-area electron diffraction shows that the nanorods are pure monoclinic Ga2O3 single crystal. The photoluminescence spectrum indicates that the Ga2O3 nanorods have a good emission property. The growth mechanism is discussed briefly.     

Synthesis of flower-shape clustering GaN nanorods by ammoniating Ga2O3 films

Flower-shape clustering GaN nanorods are successfully synthesized on Si（111） substrates through ammoniating Ga2O3/ZnO films at 950℃. The as-grown products are characterized by x-ray diffraction （XRD）, scanning electron microscope （SEM）, field-emission transmission electron microscope （FETEM）, Fourier transform infrared spectrum （FTIR） and fluorescence spectrophotometer. The SEM images demonstrate that the products consist of flower-shape clustering GaN nanorods. The XRD indicates that the reflections of the samples can be indexed to the hexagonal GaN phase and HRTEM shows that the nanorods are of pure hexagonal GaN single crystal. The photoluminescence （PL） spectrum indicates that the GaN nanorods have a good emission property. The growth mechanism is also briefly discussed.     

Fabrication of Syringe-Shaped GaN Nanorods

Syringe-shaped GaN nanorods are synthesized on Si（111） substrates by annealing sputtered Ga2O3/BN films under flowing ammonia at temperature of 950℃. Most of the nanorods consist of a main rod and a top needle, looking like a syringe. X-ray diffraction and selected-area electron diffraction confirm that the syringe-shaped nanorods are hexagonal wurtzite GaN. Scanning electron microscopy and high-resolution transmission electron microscopy reveal that these nanorods are as long as several micrometres, with diameters ranging from 100 to 300nm. In addition to the BN intermediate layer, the proper annealing temperature has been demonstrated to be a crucial factor for the growth of syringe-shaped nanorods by this method.     

Luminescence Properties of Nanostructure ZnO-Covered Carbon Fibers Prepared by Thermal Oxidation

We report on ZnO nanosheets and nanorods synthesized by thermal oxidation of zinc films deposited on carbon fiber surfaces. The structure and optical properties are characterized by x-ray diffraction, scanning electron microscopy and photoluminescence spectrum. An orange-red emission around 683 nm is found in the PL spectrum when the sample prepaxs at 400℃ for four hours in air. With annealing temperature increasing from 400℃ to 500℃, the blue shift is observed.     

Preparation and Characteristics of GaN Films on Freestanding CVD Thick Diamond Films

Prefer-oriented and fine grained polycrystalline GaN films are prepared by plasma enhanced metal organic chemical vapour deposition on nucleation surfaces of freestanding thick diamond films. The characteristics of the GaN films are characterized by x-ray diffraction, reflection high energy electron diffraction and atomic force microscopy. The results indicate that the structure and morphology of the films are strongly dependent on the deposition temperature. The most significant improvements in morphological and structural properties of GaN films are obtained under the proper deposition temperature of 400°C.     

Synthesis and Growth Mechanism： A Novel Fishing Rod-Shaped GaN Nanorods

A novel fishing rod-shaped GaN nanorod is successfully fabricated through a new method by using the two-step growth technology. This growth method is applicable to continuous synthesis and is able to produce a large number of single-crystalline GaN nanorods with a relatively high purity and at a low cost. X-ray diffraction, scanning electron microscopy and high-resolution transmission electron microscopy are used to characterize the as- synthesized nanorods. The results show that most of the nanorods consist of a main rod and a top curved thread. It is single-crystal GaN with hexagonal wurtzite structure. The representative photoluminescence spectrum at room temperature exhibits a strong UV light emission band centered at 370.8nm. Furthermore, a possible two-stage growth mechanism of the fishing rod-shaped GaN nanorod is also briefly discussed.     

Microstructural and electromagnetic properties of MnO2 coated nickel particles with submicron size

Nickel particles with submicron size are prepared by using the solvothermal method. These spheres are then coated with a layer of MnO2 using the soft chemical method. The microstructure is characterized by x-ray diffraction, transmission electron microscopy, and scanning electron microscopy. Energy x-ray dispersive spectrometry and high-resolution images show that the granular composites have a classical core/shell structure with an MnO2 superficial layer,no more than 10 nm in thickness. The hysteresis measurements indicate that these submicron-size Ni composite powders have small remanence and moderate coercivity. The electromagnetic properties of the powders measured by a vector network analyzer in a frequency range of 2-18 GHz are also reported in detail.     

Growth mechanism and photoluminescence of the SnO2 nanotwists on thin film and the SnO2 short nanowires on nanorods

SnO2 nanotwists on thin film and SnO2 short nanowires on nanorods have been grown on single silicon substrates by using Au-Ag alloying catalyst assisted carbothermal evaporation of SnO2 and active carbon powders.The morphology and the structure of the prepared nanostructures are determined on the basis of field-emission scanning electron microscopy(FESEM),transmission electron microscopy(TEM),selected area electronic diffraction(SAED),high-resolution transmission electron microscopy(HRTEM),x-ray diffraction(XRD),Raman and photoluminescence(PL) spectra analysis.The new peaks at 356,450,and 489 nm in the measured PL spectra of two kinds of SnO2 nanostructures are observed,implying that more luminescence centres exist in these SnO2 nanostructures due to nanocrystals and defects.The growth mechanism of these nanostructures belongs to the vapour-liquid-solid(VLS) mechanism.     

Comparative Study of Activity of Different Agings of Aluminum Nanopowders

The structure and activity of aluminum nanopowders with a 3nm oxide layer on their surface （3-nm-OLA） and 30nm oxide layers on their surface （30-nm-OLA） are investigated comparably under the same normal incident shock wave intensity. Their corresponding reaction products are characterized by x-ray diffraction, high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy. The spectrum of x-ray diffraction shows that there are different phases of alumina in their products, which evidences directly the different reacting temperature in the shock tube. The x-ray photoelectron spectroscopy reveals that the oxide layer thickness is 30 nm on the product surface of 30-nm-OLA, while it is only 3 nm on 3-nm-OLA. Images of transmission electron microscopy present additional evidence that the agglomeration mechanism is over sintering one in the containing-30-nm-OLA system, the reversed mechanism is observed in the containing-3-nm-OLA reaction system.     

Synthesis of Au nanorods in a low pH solution via seed-media method

The gold(Au) nanorods with various aspect ratios are obtained by a seed-media method in low pH growth solution.Transmission electron microscopy(TEM) and UV-visible spectrophotometry are utilized to characterize the Au nanorods,and the longitudinal absorption peak positions of Au nanorods show different shifting trends of the growth evolutions in various low pH(1～3) solutions. Other influential factors on the shape of Au nanorod are also systematically studied under low pH reaction condition. The positions of longitudinal peak shift between 600 nm and 900 nm, with the aspect ratios of Au nanorods varying from 2 to 5 both in the simulation and experimental results. The simulation results are in agreement with experimental ones.     

White Light Emission from ZnS:Mn Thin Films Deposited on GaN Substrates by Pulsed Laser Deposition

ZnS:Mn thin films are grown on GaN substrates by pulsed laser deposition.The structure,morphology and optical properties are investigated by x-ray diffraction,scanning electron microscopy and photoluminescence(PL).The obtained ZnS:Mn thin films are grown in preferred orientation along β-ZnS(111) direction corresponding to crystalline structure of cubic phase.The deposition temperature has an obvious effect on the structure,surface morphology and optical properties of ZnS:Mn thin films.PL measurements show that there are two emission bands located at 440 nm and 595 nm when the films are deposited at temperatures from 100℃ to 500℃.The relative integrated intensity of the blue emission and orange-red emission is determined by the deposition conditions.At the proper deposition temperature of 300℃,the color coordinate is closest to(0.33,0.33).The ZnS:Mn films on GaN substrates can exhibit white fight emission.     

Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition

GaN nanorods are successfully fabricated by adjusting the how rate ratio of hydrogen(H_2)/nitrogen(N_2) and growth temperature of the selective area growth(SAG) method with metal organic chemical vapor deposition(MOCVD).The SAG template is obtained by nanospherical-lens photolithography.It is found that increasing the flow rate of H_2 will change the GaN crystal shape from pyramid to vertical rod,while increasing the growth temperature will reduce the diameters of GaN rods to nanometer scale.Finally the GaN nanorods with smooth lateral surface and relatively good quality are obtained under the condition that the H_2:N_2 ratio is 1:1 and the growth temperature is 1030℃.The good crystal quality and orientation of GaN nanorods are confirmed by high resolution transmission electron microscopy.The cathodoluminescence spectrum suggests that the crystal and optical quality is also improved with increasing the temperature.     

Characterization of ZnS nanoparticles synthesized by co-precipitation method

ZnS nanoparticles are prepared by homogeneous chemical co-precipitation method using EDTA as a stabilizer and capping agent. The structural, morphological, and optical properties of as-synthesized nanoparticles are investigated using x-ray diffraction, scanning electron microscopy, Fourier transform infrared spectroscopy, ultraviolet-visible(UV-Vis)absorption, and photoluminescence spectroscopy. The x-ray diffraction pattern exhibits a zinc-blended crystal structure at room temperature. The average particle size of the nanoparticles from the scanning electron microscopy image is about50 nm. The ultraviolet absorption spectrum shows the blue shift in the band gap due to the quantum confinement effect.The photoluminescence spectrum of Zn S nanoparticles shows a blue visible spectrum.     

Nanoporous AlN particles production from a solid-state metathesis reaction

This paper reports that nanoporous AlN particles are synthesized from solid-state metathesis reactions using AlCl₃ and Mg₃N₂ as reactants. The samples are characterized by x-ray diffraction (XRD), transmission electron microscopy (TEM), selected area electron diffraction, high-resolution transmission electron microscopy (HRTEM), ultraviolet--visible (UV--vis) absorption spectroscopy and Raman spectroscopy. The results show that samples with walls 10 nm in thickness and pores between 10 nm and 100 nm in diameter were produced successfully from these reactions, and their band gap and vibration modes agree with those of AlN bulk crystal.     

CuO Nanosheets Synthesized by Hydrothermal Process

CuO nanosheets are synthesized by oxidation of commercial Cu substrates through the hydrothermal process at 150℃. The as-synthesized nanosheets are characterized by powder x-ray diffraction, transmission electron microscopy, selected area electron diffraction and x-ray photoelectron spectroscopy. For comparison, Cu substrates are also oxidized without NaOH added in precursor solution. The results show that the morphology of CuO could be controlled by NaOH, which demonstrates that NaOH can serve as a cosolvent and modifier in the reaction system. The possible mechanism of the growth of CuO nanosheets is also discussed.     

Synthesis of high-TC ferromagnetic Mn-doped ZnO nanorods by thermal evaporation

This paper reports that a large amount of Mn-doped ZnO nanorods have been synthesized through thermal evaporation. The morphologies and properties are studied with x-ray diffraction, a scanning electron microscope, transmission electron microscope and Raman spectroscope. The results indicate that the manganese atoms occupy the zinc vacancies in the wurtzite lattice of ZnO without forming secondary phases. The exact manganese content has been studied by the x-ray fluorescence spectrum. Meanwhile, the magnetic moment versus temperature result proves that the as-prepared Mn-doped ZnO nanorods show ferromagnetic properties at temperatures as high as 400 K. These studies provide a good understanding of the origin of magnetic properties in diluted magnetic semiconductors.     

Degradation mechanism of two-dimensional electron gas density in high Al-content AlGaN/GaN heterostructures

This paper finds that the two-dimensional electron gas density in high Al-content AlGaN/GaN heterostructures exhibits an obvious time-dependent degradation after the epitaxial growth. The degradation mechanism was investigated in depth using Hall effect measurements, high resolution x-ray diffraction, scanning electron microscopy, x-ray photoelectron spectroscopy and energy dispersive x-ray spectroscopy. The results reveal that the formation of surface oxide is the main reason for the degradation, and the surface oxidation always occurs within the surface hexagonal defects for high Al-content AlGaN/GaN heterostructures.