Initial damage induced by thermal residual stress and microscopic failure analysis of carbon-fiber reinforced composite under shear loading

In order to study the mechanical properties and the progressive failure process of composite under shear loading, a representative volume element (RVE) of fiber random distribution was established, with two dominant damage mechanisms – matrix plastic deformation and interfacial debonding – included in the simulation by the extended Drucker–Prager model and cohesive zone model, respectively. Also, a temperature-dependent RVE has been set up to analyze the influence of thermal residual stress. The simulation results clearly reveal the damage process of the composites and the interactions of different damage mechanisms. It can be concluded that the in-plane shear fracture initiates as interfacial debonding and evolves as a result of interactions between interfacial debonding and matrix plastic deformation. The progressive damage process and final failure mode of in-plane shear model which are based on constitute are very consistent with the observed result under scanning electron microscopy of V-notched rail shear test. Also, a transverse shear model was established as contrast in order to comprehensively understand the mechanical properties of composite materials under shear loading, and the progressive damage process and final failure mode of composite under transverse shear loading were researched. Thermal residual stress changes the damage initiation locations and damage evolution path and causes significant decreases in the strength and fracture strain.     

An in situ growth method for property control of LPCVD polysilicon film

Polysilicon films deposited by low-pressure chemical vapor deposition(LPCVD)exhibit large residual stress and stress gradient,depending on the deposition condition.An in situ growth method based on multilayer concept is presented to control the property for as-deposited polysilicon.A 3-μm thick polysilicon film with nine layers structure is demonstrated under the detailed analysis of multi-layer theory and material characteristic of polysilicon.The results show that a 3-μm-thick polysilicon film with 8-MPa overall residual tensile stress and 2.125-MPa/μm stress gradient through the film thickness is fabricated successfully.     

极紫外、X射线和中子薄膜光学元件与系统

极紫外、X射线和中子光学为现代科学的发展提供了高精度的观测手段,但这些手段的实现需要大量高性能薄膜光学元件和系统的支撑。由于短波长和材料光学常数的限制,短波光学元件的结构、性能和制作技术明显区别于长波光学元件。近二十年来,同济大学精密光学工程技术研究所建立了以短波反射镜为基底的精密加工检测平台,发展了超薄薄膜界面生长调控方法和大尺寸薄膜镀制技术,提出了高效率/高分辨率多层膜微纳结构的衍射理论和制备方法,初步阐明了短波辐照损伤的物理机制,形成了短波薄膜和晶体聚焦成像系统的高精度全流程研制技术,并将该技术成功应用于国内和国际短波光子大科学装置中。本文简要介绍本课题组在上述短波元件和系统领域中的研究进展。     

Establishment of infinite dimensional Hamiltonian system of multilayer quasi-geostrophic flow & study on its linear stability

A multilayer flow is a stratified fluid composed of a finite number of layers with densities homogeneous within one layer but different from each other. It is an intermediate system between the single-layer barotropic model and the continuously stratified baroclinic model. Since this system can simulate the baroclinic effect simply, it is widely used to study the large-scale dynamic process in atmosphere and ocean. The present paper is concerned with the linear stability of the multilayer quasi-geostrophic flow, and the associated linear stability criteria are established. Firstly, the nonlinear model is turned into the form of a Hamiltonian system, and a basic flow is defined. But it cannot be an extreme point of the Hamiltonian function since the system is an infinite-dimensional one. Therefore, it is necessary to reconstruct a new Hamiltonian function so that the basic flow becomes an extreme point of it. Secondly, the linearized equations of disturbances in the multilayer quasi-geostrophic flow are derived by introducing infinitesimal disturbances superposed on the basic flows. Finally, the properties of the linearized system are discussed, and the linear stability criteria in the sense of Liapunov are derived under two different conditions with respect to certain norms.     

沉积参量及时效时间对 SiO2薄膜残余应力的影响

SiO2 薄膜由电子束蒸发方法沉积而成。用GPI数字波面光学干涉仪测量了不同沉积条件下玻璃基底镀膜前后曲率半径的变化,并确定了 SiO2 薄膜中的残余应力。在其他条件相同的情况下,当沉积温度由 190 ℃升高到350 ℃时,SiO2 薄膜中的压应力由-156 MPa增大为-289 MPa。氧分压由3.0×10-3 Pa升高到13.0×10-3 Pa时,SiO2 薄膜中的应力由-223.5 MPa变为20.4 MPa。通过对薄膜折射率的测量,发现薄膜的堆积密度随沉积条件的改变也发生了规律性的变化。应力的变化主要是由于沉积时蒸发粒子的动能不同,导致薄膜结构不同引起的。同时,在样品的存放过程中,发现随着存放时间的延长,薄膜中的应力表现出了由压应力状态向张应力状态演变的趋势。     

TiO2和SiO2薄膜应力的产生机理及实验探索

对最常用的TiO₂和SiO₂薄膜应力, 包括应力模型、应力测试方法和不同实验条件下的应力测试结果作了研究.基于曲率法模型，对TiO₂和SiO₂单层膜和多层膜进行了实验测试，得到了一些有价值的结果，特别是离子辅助淀积和基板温度等工艺参数对薄膜应力的影响.提出了薄膜聚集密度是应力的重要因素，低聚集密度产生张应力，而高聚集密度产生压应力.在多层膜中通过调节工艺参数，适当地控制张应力或压应力，可使累积应力趋向于零. 关键词： 薄膜应力 离子辅助淀积 聚集密度     

离子辅助沉积法制备SiO2介质薄膜的应力研究

在高功率垂直腔面发射激光器制作工艺中,生长出低应力、高质量、高稳定性的SiO₂介质层非常关键。我们使用高效率LaB₆离子源辅助,在低放电电流条件下,在GaAs衬底上沉积了SiO₂,并对退火的应力影响进行了测试。在有离子辅助沉积时,对不同生长速率、不同厚度的应力影响进行了研究,对沉积过程进行了分析。结果表明:离子辅助沉积的SiO₂薄膜的应力远小于常规工艺条件下沉积的薄膜的应力,且退火后应力变化小。     

连续梯度的功能层对燃料电池在初始还原过程中曲率及残余应力的影响

连续梯度的电极由于其相对于多层梯度电极能更加有效地缓解电极和电解质的热失配及改善界面黏接而受到特别的关注. 本文通过建立含连续梯度的阳极功能层的阳极支撑固体氧化物燃料电池的力学模型, 研究了连续梯度的阳极功能层对阳极支撑固体氧化物燃料电池半电池在初始还原过程中曲率及残余应力的影响. 结果表明电池的曲率在初始还原过程中随还原程度的增大而逐渐增大. 连续梯度的阳极功能层的引入不能同时改善电池的曲率和残余应力, 即连续梯度的阳极功能层在缓解应力的同时会导致曲率的增大, 反之亦然. 含有连续梯度的阳极功能层的电池在部分还原状态下, 梯度层/阳极支撑界面处具有最大的拉应力容易导致电池受损, 实际中应保证电池被完全还原.     

离子束溅射制备低应力深紫外光学薄膜

采用离子束溅射制备了Al F3、Gd F3单层膜及193 nm减反和高反膜系,分别使用分光光度计、原子力显微镜和应力仪研究了薄膜的光学特性、微观结构以及残余应力。在优选的沉积参数下制备出消光系数分别为1.1×10~(-4)和3.0×10~(-4)的低损耗AlF_3和GdF_3薄膜,对应的折射率分别为1.43和1.67,193 nm减反膜系的透过率为99.6%,剩余反射几乎为零,而高反膜系的反射率为99.2%,透过率为0.1%。应力测量结果表明,AlF_3薄膜表现为张应力而GdF_3薄膜具有压应力,与沉积条件相关的低生长应力是AlF_3和GdF_3薄膜残余应力较小的主要原因,采用这两种材料制备的减反及高反膜系应力均低于50 MPa。针对平面和曲率半径为240 mm的凸面元件,通过设计修正挡板,250 mm口径膜厚均匀性均优于97%。为亚纳米精度的平面元件镀制193 nm减反膜系,镀膜后RMS由0.177 nm变为0.219 nm。     

Growth of interfacial debonding in notched two-dimensional unidirectional composite under stress and displacement controls

A simplified calculation method for study of the growth of interfacial debonding between elastic fiber and elastic matrix ahead of the notch-tip in composites under displacement and stress controlled conditions was presented based on the shear lag approach in which the influences of residual stress and frictional shear stress at the debonded interface were incorporated. The calculation method was applied to a model two-dimensional composite. An outline is given of the difference and similarity in the growing behavior of the debonding between the displacement and stress controls, and of the influences of the residual stresses, frictional shear stress, the nature of the final cut component (fiber or matrix) and sample length on the debonding behavior.     

掺杂CVD金刚石薄膜的应力分析

在不同实验条件下，用微波等离子体化学气相沉积(MPCVD)技术在Si基体上制备了S掺杂和B-S共掺杂CVD金刚石薄膜，利用X射线衍射仪和拉曼光谱仪研究掺杂对CVD金刚石薄膜的应力影响.研究结果发现，随着S掺杂浓度的增加，薄膜中sp²杂化碳含量和缺陷增多，CVD金刚石薄膜压应力增加；小尺寸的B原子与大尺寸的S原子共掺杂时，微量B的加入改变了CVD金刚石薄膜的应力状态，共掺杂形成B-S复合体进入金刚石晶体后降低金刚石晶体的晶格畸变程度，减少S原子在晶界上偏聚数量和晶体中非金刚石结构相含量，降低由于杂质、缺陷及sp²杂化碳含量产生的晶格畸变和薄膜压应力，提高晶格完整性. 关键词： 金刚石薄膜 掺杂 应力     

微小非球面玻璃透镜超精密模压成型数值模拟

利用非线性有限元软件MSC.Marc,建立了微小非球面玻璃透镜超精密模压的有限元模型,并进行了微小非球面玻璃透镜模压数值模拟分析.通过对比模拟出的不同加工参量下的成型透镜和模具的残余应力分布结果,得出最优的超精密模压成型的模压速率和模压温度范围,并解释了模压速率和模压温度影响微小非球面玻璃透镜成型质量的原因.模拟可以对实际的大批量生产微小非球面玻璃透镜提供有力的帮助.     

The preparation and evaluation of graded multilayer ta-C films deposited by FCVA method

In this study, a series of graded multilayer ta-C films were investigated by varying their sublayer thickness ratios, in which each film sublayer was prepared at different substrate bias by filtered cathode vacuum arc (FCVA) method. The experimental results show that the graded multilayer film structure can effectively decrease the internal stress level of deposited ta-C film, and meanwhile the graded multilayer ta-C films still have high sp³ fractions. The applied substrate bias voltage and sublayer thickness ratio can apparently influence the microstructure characteristics and internal stress of the graded multilayer ta-C films. The graded multilayer ta-C film has larger sp³ fraction when applying a larger negative substrate bias voltage and having a thicker outer sublayer during the film deposition process. However, the internal stress in the as-deposited film also increases with larger thickness of the outer sublayer, and the optimal ratio of sublayer thicknesses is 1:1:1:1 for graded ta-C film with four sublayers.     

基于神经网络的选区激光熔化残余应力预测

当前对选区激光熔化产生的残余应力预测方法主要为数值模拟,但由于设备、环境、粉末等因素差异性较大,且具有较大不确定性,很难建立符合实际情况的数值模拟模型。利用神经网络在预测多变量、复杂线性信息处理方面能力强的特点,建立适用于预测316L不锈钢粉末选区激光熔化残余应力的模型。使用选区激光熔化技术打印相当数量的不同工艺参数的试样,采用超声波检测其内部残余应力作为神经网络的训练样本,并使用这些样本对神经网络模型进行训练,获得具有预测功能的神经网络,将验证样本的工艺参数输入神经网络,计算出预测的残余应力值,与实际检测值进行对比。实验结果表明,预测值与实际测量值偏差较小,验证了所提方法的有效性。采用神经网络预测残余应力的方法,可以快速确定不同选区激光熔化工艺参数对应的残余应力,避免设置残余应力较高的工艺参数,有效缩短制备高质量工件试样的周期,降低成本。     

晶圆键合和激光剥离工艺对GaN基垂直结构发光二极管芯片残余应力的影响

GaN基发光二极管(LED)中的残余应力状态对器件的性能和稳定性有很大影响. 通过使用三种不同的键合衬底(Al₂O₃衬底, CuW衬底和Si衬底)以及改变键合温度(290 ℃, 320 ℃, 350 ℃和380 ℃), 并且使用不同的激光能量密度(875, 945和1015 mJ·cm^-2) 进行激光剥离, 制备了不同应力状态的GaN基LED器件. 对不同条件下GaN LED进行弯曲度、Raman 散射谱测试. 实验结果表明, 垂直结构LED中的残余应力的状态是键合衬底和键合金属共同作用的结果, 而键合温度影响着垂直结构LED中的残余应力的大小. 激光剥离过程中, 一定能量密度下激光剥离工艺一般不会对芯片中的残余应力造成影响, 但是如果该工艺对GaN 层造成了微裂缝, 则会在一定程度上起到释放残余应力的作用. 使用Si衬底键合后, 外延蓝宝石衬底翘曲变大, 对应制备的GaN基垂直结构 LED中的残余应力为张应力, 并且随着键合温度的上升而变大; 而Al₂O₃和CuW衬底制备的LED中的残余应力为压应力, 但使用Al₂O₃衬底键合制备的LED中压应力随键合温度上升而一定程度变大, CuW 衬底制备的LED中压应力随键合温度上升而下降.     

Effect of substrate temperature on the magnetic properties and internal stresses of CoPt/AlN multilayer deposited by dc magnetron sputtering

Magnetic properties and internal stresses of AlN(20 nm)/[CoPt(2 nm)/AlN(20 nm)]₅ multilayer structure deposited at different substrate temperatures by dc magnetron sputtering have been studied. It is found that with increasing the substrate temperature from room temperature to 400 °C, in-plane magnetic anisotropy field of the film becomes smaller, and the out-of-plane magnetization becomes stronger. Especially when the film is deposited at substrate temperature of 400 °C, the out-of-plane magnetization becomes as strong as the in-plane magnetization. On the other hand, the total in-plane residual stress of the film changes gradually from compressive to tensile. The compressive intrinsic stress is generated during deposition process and decreases with increasing the substrate temperature. After annealing at high temperatures, the films show strong perpendicular magnetic anisotropy. With increasing the annealing temperature, the in-plane thermal stress also increases and becomes dominant, which is considered to result in the perpendicular magnetic anisotropy of the films.     

Research on Raman-scattering and Fabrication of Multilayer Thin Film with Different Structures and Components Based on Pt/Ti/Si3N4/SiO2/Si Substrate

选用三水醋酸铅、乙酰基丙酮酸锆、四异丙氧基钛、乙酰丙酮作初始材料,用同样的方法分别制备了锆钛酸铅(PZT)和钛酸铅(PT)两种固体前驱物. 采用改良型的溶胶-凝胶工艺技术,分别在不同的Pt-Ti-Si₃N₄-SiO₂-Si基底上,按照不同的组合方式,制备了三种多层薄膜：PZT、PT/PZT-PZT/PT、PT/PZT/-/PZT/PT. 较详细地讨论了薄膜制备的工艺技术,发现当凝胶通过烧结和干燥后变成固态物质时,薄膜内部存在着较大的残余应力,当薄膜在600 ºC下退火时其内部残余应力可以被减小. 通过拉曼     

TA15钛合金激光沉积温度场数值模拟与检测

在综合考虑热源模型、对流辐射换热、相变潜热、材料非线性因素对激光沉积修复温度场影响前提下,建立了激光沉积修复的数学模型,采用有限元参数化设计语言(APDL)对多道多层激光沉积修复温度场进行了数值模拟。研究了激光沉积修复瞬时温度场及其中心高度上节点温度随时间变化情况,分析了修复件中心高度上温度梯度分布情况。搭建了激光沉积修复温度测量系统,对修复时表面温度进行了测量,并与模拟温度进行了比较,两者吻合较好。为控制激光沉积修复组织、提高修复质量提供有效手段。     

Mound morphology and growth dynamic of the wedding-cake interfaces

We aimed in this work to study numerically the scaling behavior and the mound morphological properties of the interfaces generated by the multilayer deposition process. We have found that when the diffusion process dominates strongly the deposition one, the obtained interfaces consist of wedding-cake like structures. The width of the surface is a self-affine fractal exhibiting non-trivial scaling with the surface height and the system size, and the obtained interfaces follow the Family–Vicsek law with exponent values more consisting with the Edwards–Wilkinson model.     

Au/SiO2纳米多层薄膜的制备及其性质表征

利用多靶磁控溅射技术制备了Au/SiO₂纳米颗粒分散氧化物多层复合薄膜.研究了在保持Au单层颗粒膜沉积时间一定时薄膜厚度一定、变化SiO₂的沉积时间及SiO₂的沉积时间一定而改变薄膜厚度时，多层薄膜在薄膜厚度方向的微观结构对吸收光谱的影响.研究结果表明：具有纳米层状结构的Au/SiO₂多层薄膜在560 nm波长附近有明显的表面等离子共振吸收峰，吸收峰的强度随Au颗粒的浓度增加而增强，在Au颗粒浓度相同的情况下，复合薄膜 关键词： 2纳米复合薄膜')" href="#">Au/SiO₂纳米复合薄膜 多靶磁控溅射 吸收光谱 有效介质理论