Frequency dependence of low-temperature phononless conductivity in disordered systems

The frequency dependence of resonant phononless hopping conductivity in disordered systems with pointlike centers of localization in the low-temperature limit is considered within the framework of the pair approximation. It is shown that the existing theory that predicts the power-mode frequency dependence of the low-frequency phononless hopping conductivity σ(ω) and a transition from linear to quadratic dependence (crossover) when frequency increases may become invalid, and the quadratic frequency dependence may never manifest itself at all.     

The effect of a magnetic field on the crossover from the linear to quadratic frequency dependence of phononless hopping conductivity in disordered systems

The effect of an external magnetic field on the frequency dependence of phononless hopping conductivity in disordered system is studied. The dependence of the low-temperature phononless conductivity on the applied magnetic field is established. It is shown that in the limit of a strong magnetic field, the frequency of the transition (crossover) from linear to quadratic frequency dependence of phononless conductivity grows logarithmically with the value of a magnetic field.     

Behavior features of phononless hopping conductivity in the vicinity of the crossover from the linear to quadratic frequency dependence

It was shown that the Coulomb interaction between electrons of “active” (resonance) pairs plays a major role in a wide frequency range. Therefore, the conventional approach to the calculation of the super-linearity of the frequency dependence of ac conductivity, based on the single-particle density of states with a Coulomb gap, is inapplicable to the calculation of high-frequency phononless conductivity. The observed superlinearity of the frequency dependence of the phononless hopping conductivity can manifest itself immediately in the region of the crossover from the linear to quadratic frequency dependence of the conductivity.     

The special features of the frequency dependence of phononless hopping conduction

Within the framework of perturbation theory the imaginary part of the phononless conduction of a lightly doped compensated semiconductor is calculated. It is shown that when the basis of localized atomic-like functions is used, the superlinear frequency dependence of the real part of the conduction corresponds to the approximately linear frequency dependence of the imaginary part of the conductivity. It has been found that at frequencies below the transition (crossover) frequency ??_cr from the linear to quadratic frequency dependence of the real part of conductivity, the dielectric loss tangent depends weakly on the frequency and it is determined by the relationship of ???_cr to the width of the impurity band. It is shown that measurements of the dielectric loss tangent can provide information on the localization radius of impurity states.     

Phononless hopping conduction in two-dimensional layers of quantum dots

Regularities are studied in charge transport due to the hopping conduction of holes along two-dimensional layers of Ge quantum dots in Si. It is shown that the temperature dependence of the conductivity obeys the Efros-Shklovskii law. It is found that the effective localization radius of charge carriers in quantum dots varies nonmonotonically upon filling quantum dots with holes, which is explained by the successive filling of electron shells. The preexponential factor of the hopping conductivity ceases to depend on temperature at low temperatures (T<10 K) and oscillates as the degree of filling quantum dots with holes varies, assuming values divisible by the conductance quantum e²/h. The results obtained indicate that a transition from phonon-assisted hopping conduction to phononless charge transfer occurs as the temperature decreases. The Coulomb interaction of localized charge carriers has a dominant role in these phononless processes.     

Soft-potential model and homogeneous width of spectral lines of impurity centers in molecular amorphous media

A study is made to analyze the possibility of using the soft-potential model in optical investigations of disordered molecular systems with impurities. A procedure is suggested for calculating the temperature dependence of the homogeneous width of a phononless line in amorphous media with impurities within the soft-potential model. A calculation is performed of the temperature dependence of the width of a phononless line (optical dephasing) in an amorphous system of polymethyl methacrylate (PMMA) with an addition of tetratert-butylterrylene (TBT) using the parameters of this system known from the literature. Calculations are performed of the contributions to the width of a phononless line due to the interaction of an impurity with tunneling two-level systems, with thermally activated barrier crossings in double-well potentials, and with quasilocal modes of the matrix. The model calculation results are compared with the experimental data on the photon echo for TBT/PMMA, measured by us in the temperature range from 0.3 to 20 K. It is found that the soft-potential model describes qualitatively correctly the temperature behavior of the homogeneous width of a phononless line. In the temperature range of T < 2 K, where the main contribution to optical dephasing is associated with tunneling two-level systems, the predicted values of phononless line width agree well with the experimental data. At higher temperatures, some difference is observed between the prediction and experimental data, which may be due to the effect of impurity on the formation of quasilocal oscillation of the matrix.     

Radiation-stimulated pulse conductivity of alkali halide crystals with a NaCl lattice

The temperature dependence of the pulse conductivity σ for crystals of alkali halides with the NaCl-type lattice is measured at different densities j of excitation with an electron beam of picosecond duration. It is demonstrated that an increase in j leads to a weakening of the σ(T) dependence. This effect is due to the overlap of the wave functions of recombination centers and a decrease in the activation energy of separation of genetic electron-hole pairs.     

Tunneling conductivity in lithiated transition metal oxide cathode Li<Subscript>0.9</Subscript>[Ni<Subscript>1/3</Subscript>Mn<Subscript>1/3</Subscript>Co<Subscript>1/3</Subscript>]O<Subscript>1.95</Subscript>

Electrical complex ac conductivity of the compound Li_0.9[Ni_1/3Mn_1/3Co_1/3]O_1.95 has been studied in the frequency range 10 Hz–2 MHz and in the temperature range 93–373 K. It has been observed that the frequency dependence of the ac conductivity obeys a power law and the temperature dependence of the ac conductivity is quite weak. The experimental data have been analyzed in the framework of several theoretical models based on quantum mechanical tunneling and classical hopping over barriers. It has been observed that the electron tunneling is dominant in the temperature range from 93 K to 193 K. A crossover of relaxation mechanism from electron tunneling to polaron tunneling is observed at 193 K. Out of the several models discussed, the electron tunneling and the polaron tunneling models are quite consistent with the experimental data for the complex ac conductivity. The various parameters obtained from the fits of the experimental results for the real and imaginary parts of the conductivity to the predictions of these models are quite reasonable.     

Influence of the interaction of intramolecular and crystalline oscillations on the form of the phononless line of impurity molecules

The temperature broadening and shift of phononless lines of the impurity centers due to interaction of intraimpurity and crystal oscillations are investigated. It is shown that the width of phononless lines as a function of the mode-interaction parameter has a maximum, which is reached at parameters corresponding to the appearance of unstable oscillations. Numerical calculations show that the rate of temperature broadening is limited at the level of 0.5 cm^–1/deg.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 45–50, December, 1987.     

量子化极限情况下MOS反型层二维电子气定域态电子电导率σxx的低频效应

本文分析了量子化极限情况下MOS反型层二维电子气(2DEG)定域态电子电导率的频率特性。主要内容:(1)用费密分布函数随频率变化导出了在2DEG两种主要导电过程的频率特性。即向迁移率边激发导电过程电导率σ_ME(ω)和可变程跳跃导电过程电导率σ_VRH(ω)。发现:σ_ME(ω)和σ_VRH(ω)是一个复数。(2)说明了σ_ME(ω)有较长时间常数τ_n,对应一个低频过程。σ_VRH(ω)有较短时间常数,对应一个高频过程。(3)理论与实验作了比较,拟合结果表明,在实验条件下,向迁移率边E_c激发时间常数τ_n 3.6×10^-6。 关键词：     

Structural and AC conductivity study of CdTe nanomaterials

Cadmium telluride (CdTe) nanomaterials have been synthesized by soft chemical route using mercapto ethanol as a capping agent. Crystallization temperature of the sample is investigated using differential scanning calorimeter. X-ray diffraction and transmission electron microscope measurements show that the prepared sample belongs to cubic structure with the average particle size of 20 nm. Impedance spectroscopy is applied to investigate the dielectric relaxation of the sample in a temperature range from 313 to 593 K and in a frequency range from 42 Hz to 1.1 MHz. The complex impedance plane plot has been analyzed by an equivalent circuit consisting of two serially connected R-CPE units, each containing a resistance (R) and a constant phase element (CPE). Dielectric relaxation peaks are observed in the imaginary parts of the spectra. The frequency dependence of real and imaginary parts of dielectric permittivity is analyzed using modified Cole–Cole equation. The temperature dependence relaxation time is found to obey the Arrhenius law having activation energy ~0.704 eV. The frequency dependent conductivity spectra are found to follow the power law. The frequency dependence ac conductivity is analyzed by power law.     

Effect of electron-electron interactions on the conductivity of clean graphene

Minimal conductivity of a single undoped graphene layer is known to be of the order of the conductance quantum, independent of the electron velocity. We show that this universality does not survive electron-electron interaction, which results in nontrivial frequency dependence. We begin with analyzing the perturbation theory in the interaction parameter g for the electron self-energy and observe the failure of the random-phase approximation. The optical conductivity is then derived from the quantum kinetic equation, and the exact result is obtained in the limit when g<1< g|lnomega|.     

Effect of C60 fullerene additions on the thermal conductivity of low-density polyethylene films

The thermal conductivity of LDPE + C₆₀ nanocomposites with a fullerene concentration up to 10 wt % is studied in the temperature range 20–80°C. This conductivity is found to nonlinearly decrease with increasing fullerene concentration. The decrease in the thermal conductivity of the composites is considered to be caused by a decrease in the phonon mean free path as a result of an increase in the number of scattering centers. The temperature dependence of the thermal conductivity is found to have a maximum.     

Theory of the oscillatory dependence of the conductivity of two-component dielectric composites at room temperatures

It is predicted that at room temperatures a hopping mechanism of charge transfer plays a very important role and leads to temperature oscillations of the conductivity σ(T) of a dielectric composite. The dependence of the conductivity σ(ω) on the frequency of an alternating electric field is calculated. The relation obtained can be used to determine, first, the electron relaxation times and, second, and more importantly, the frequency of electron tunneling through the dielectric matrix from measurements of the conductivity in various frequency ranges. Zh. Tekh. Fiz. 69, 31–34 (March 1999)     

The Poole-Frenkel effect with allowance for multiphonon deep-center ionization in amorphous silicon nitride

The Poole-Frenkel mechanism, both with and without allowance for multiphonon ionization of deep centers, was used to describe the conductivity of amorphous silicon nitride. The dependence of the frequency factor on electron-phonon coupling strength was considered. Taking into account the weak electron-phonon coupling in deep centers, the value of the frequency factor was found to be ν ≈ 10¹⁵ s^?1, which is consistent with the estimates made by Frenkel.     

Electrical conduction and dielectric properties of vanadium phosphate glasses doped with lithium

AC conductivity and dielectric studies on vanadium phosphate glasses doped with lithium have been carried out in the frequency range 0.2-100 kHz and temperature range 290-493 K. The frequency dependence of the conductivity at higher frequencies in glasses obeys a power relationship, σ_ac=Aω^s. The obtained values of the power s lie in the range 0.5≤s≤1 for both undoped and doped with low lithium content which confirms the electron hopping between V⁴⁺ and V⁵⁺ ions. For doped glasses with high lithium content, the values of s≤0.5 which confirm the domination of ionic conductivity. The study of frequency dependence of both dielectric constant and dielectric loss showed a decrease with increasing frequency while they increase with increasing temperature. The results have been explained on the basis of frequency assistance of electron hopping besides the ionic polarization of the glasses. The bulk conductivity increases with increasing temperature whereas decreases with increasing lithium content which means a reduction of the V⁵⁺.     

The Nonuniversality of the Frequency Dependence of the Conductivity in Disordered Nanogranulated Systems

Physics of the Solid State - The real part of the high-frequency phononless conductivity is calculated in the pair approximation for a disordered array of densely packed spherical nanogranules. The...     

High-frequency tunable EPR spectroscopy of Tm3+ ions in synthetic forsterite

Paramagnetic centers formed by impurity Tm³⁺ ions in synthetic forsterite Mg₂SiO₄ were studied by high-frequency tunable electron paramagnetic resonance spectroscopy in the frequency range of 150–315 GHz. Crystals were grown from the melt by the Czochralski technique in slightly oxidizing atmosphere. Several centers distinguished by different zero-field splitting between the ground and first excited singlets were found and investigated. Parameters of the effective spin Hamiltonian for these centers describing the dependence of electron-nuclear sublevels on magnetic field were determined.     

具有分离门电抽运石墨烯中电子-空穴等离子体的冷却效应

本文研究了室温条件下具有分离门的电诱导石墨烯n-i-p结构中, 与电子和空穴注入有关的粒子数反转效应. 考虑n区横向电场的屏栅效应, 计算了电子-空穴的有效温度与门电压以及光声子的有效温度与门电压的关系, 结果表明注入可以导致n区中电子-空穴等离子体显著冷却, 直至低于晶格温度; 计算了电流-电压特性以及与频率有关的动态电导率, 在一定的电压下, 动态电导率在太赫兹频段可以为负值. 研究表明电子-空穴等离子体冷却能够加强负动态电导率效应, 提高实现太赫兹激射的可行性. 关键词： 石墨烯 n-i-p结构 有效温度 动态电导率     

On the microwave conductivity of α-AgI. part II: Complex conductivity by measurement of the complex transmission factor

The electrical conductivity and the dielectric constant of α-AgI are computed in the frequency region from 8.2 to 40 GHz from the complex transmission factor of polycrystalline samples, which totally fill the crossection of a rectangular waveguide. No frequency dependence of both the conductivity and the permittivity is found in the entire temperature range studied (400 K to 720 K). The high frequency values coincide with the static ones.