Surface oxidation states in Si/SiO2 nanostructures prepared from Si/SiO2 mixtures

Silica nanospheres have been produced by a novel technique where surface Si oxidation states can be adjusted using the ratio of metalloid ions/metalloid atoms in the starting mixture. When the proportions of Si4+/Si0 are equal in the synthesis, the resulting solid is considerably more reactive than Cab-O-Sil toward the phenol hydroxylation reaction and the surface shows an average Si oxidation state of +3. On the other hand, those silica nanospheres, produced from a mixture of Si4+/Si0 = 0.25, showed a lower reactivity comparable to that of Cab-O-Sil which XPS demonstrates has a surprisingly low average Si oxidation state close to +1. We speculate that the silicon surface oxidation state and the number of surface silanol groups play important roles in determining the activity of the solid toward the phenol hydroxylation reaction. In expanding our earlier report4 on the copper-silica system, we establish that the surface chemistry of the silica nanospheres is apparently different from that of fumed, amorphous silica. These results suggest that we are developing a technique that can be generalized to create supported, mixed metal oxides having tunable average surface oxidation states.     

Photoluminescence from (Si/SiO2)n superlattices and their use as emitters in [SiO2/Si]n SiO2 [Si/SiO2]m microcavities

Si/SiO2 superlattices are recently under investigation to add optical functionality to silicon based microelectronics. In such superlattices quantum-confinement should drive Si to become a good light emitter. Emission properties can be further improved and controlled by placing the emitter in optical microcavities. In this paper emission properties of (Si/SiO2), superlattices grown by Low Pressure Chemical Vapour Deposition will be compared with the ones obtained by other growth techniques and the origin of the emission will be discussed. Emission properties can be further improved and controlled by placing the emitter in optical microcavities. Optical properties of microcavities produced with standard complementary metal-oxide-semiconductor techniques containing Si/SiO2 superlattices as light emitter will be reviewed and a comparison between properties estimated from calculations and experiments will be given.     

Adsorption of silanes bearing nitrogenated Lewis bases on SiO2/Si (100) model surfaces

The present paper describes the one-pot procedure for the formation of self-assembled thin films of two silanes on the model oxidized silicon wafer, SiO2/Si. SiO2/Si is a model system for other surfaces, such as glass, quartz, aerosol, and silica gel. MALDI-TOF MS with and without a matrix, XPS, and AFM have confirmed the formation of self-assembled thin films of both 3-imidazolylpropyltrimethoxysilane (3-IPTS) and 4-(N-propyltriethoxysilane-imino)pyridine (4-PTSIP) on the SiO2/Si surface after 30 min. Longer adsorption times lead to the deposition of nonreacted 3-IPTS precursors and the formation of agglomerates on the 3-IPTS monolayer. The formation of 4-PTSIP self-assembled layers on SiO2/Si is also demonstrated. The present results for the flat SiO2/Si surface can lead to a better understanding of the formation of a stationary phase for affinity chromatography as well as transition-metal-supported catalysts on silica and their relationship with surface roughness and ordering. The 3-IPTS and 4-PTSIP modified SiO2/Si wafers can also be envisaged as possible built-on-silicon thin-layer chromatography (TLC) extraction devices for metal determination or N-heterocycle analytes, such as histidine and histamine, with "on-spot" MALDI-TOF MS detection.     

Controlling the supramolecular assembly of redox-active dendrimers at molecular printboards by scanning electrochemical microscopy

Redox-active ferrocenyl (Fc)-functionalized poly(propylenimine) (PPI) dendrimers solubilized in aqueous media by complexation of the Fc end groups with beta-cyclodextrin (betaCD) were immobilized at monolayers of betaCD on glass ("molecular printboards") via multiple host-guest interactions. The directed immobilization of the third-generation dendrimer-betaCD assembly G3-PPI-(Fc)16-(betaCD)16 at the printboard was achieved by supramolecular microcontact printing. The redox activity of the patterned dendrimers was mapped by scanning electrochemical microscopy (SECM) in the positive feedback mode using [IrCl(6)](3-) as a mediator. Local oxidation of the Fc-dendrimers by the microelectrode-generated [IrCl(6)](2-) resulted in an effective removal of the Fc-dendrimers from the host surface since the oxidation of Fc to the oxidized form (Fc+) leads to a concomitant loss of affinity for betaCD. Thus, SECM provided a way not only to image the surface, but also to control the binding of the Fc-terminated dendrimers at the molecular printboard. Additionally, the electrochemical desorption process could be monitored in time as the dendrimer patterns were gradually erased upon multiple scans.     

Iron adsorption on SiO2/Si(111)

The adsorption of ferric and ferrous iron onto the native oxide of the SiO₂/Si(111) surface has been evaluated using X‐ray photoelectron spectroscopy (XPS). Through a series of immersion experiments, performed at room temperature and pH 1, it has been shown that the ferric species is strongly adsorbed onto the hydrophilic surface, while ferrous iron remains in solution. Dehydroxylation of the silica surface by etching with hydrofluoric acid reduces the concentration of receptive Si‐OH groups, thereby limiting iron adsorption. The experiments were reproduced in a combined ultrahigh vacuum‐electrochemical system (UHV‐EC), which allowed a carbon‐free surface to be prepared before contacting the iron solutions, and confirmed the strong affinity of ferric iron towards the SiO₂/Si(111) surface. Copyright © 2007 John Wiley & Sons, Ltd.     

Diffusion reaction of oxygen in HfO2/SiO2/Si stacks

We study the oxidation mechanism of silicon in the presence of a thin HfO2 layer. We performed a set of annealing in 18O2 atmosphere on HfO2/SiO2/Si stacks observing the 18O distribution in the SiO2 layer with time-of-flight secondary ion mass spectrometry (ToF-SIMS). The 18O distribution in HfO2/SiO2/Si stacks upon 18O2 annealing suggests that what is responsible for SiO2 growth is the molecular O2, whereas no contribution is found of the atomic oxygen to the oxidation. By studying the dependence of the oxidation velocity from oxygen partial pressure and annealing temperature, we demonstrate that the rate-determining step of the oxidation is the oxygen exchange at the HfO2/SiO2 interface. When moisture is chemisorbed in HfO2 films, the oxidation of the underlying silicon substrate becomes extremely fast and its kinetics can be described as a wet silicon oxidation process. The silicon oxidation during O2 annealing of the atomic layer deposited HfO2/Si is fast in its early stage due to chemisorbed moisture and becomes slow after the first 10 s.     

Effects of post-deposition annealing on chemical composition of SiNx film in SiO2/SiNx/SiO2/Si stacked structure

To systematically evaluate the quality of SiN_x films in multi-stacked structures, we investigated the effects of post-deposition annealing (PDA) on the film properties of SiN_x within the SiO₂/SiN_x/SiO₂/Si stacked structure by performing X-ray photoelectron spectroscopy (XPS), X-ray reflectivity (XRR), Fourier transform infrared (FT-IR) spectroscopy, and scanning transmission electron microscope–electron energy loss spectroscopy (STEM-EELS) analyses. The XPS results showed that PDA induces the oxidation of the SiN_x layer. In particular, new finding is that Si-rich SiN_x in the SiN_x layer is preferentially oxidized by PDA even in multi-stacked structure. The XRR results showed that the SiN_x layer becomes thinner, whereas the interface layer between the SiN_x layer and Si becomes thicker. It is concluded by STEM-EELS and XPS that this interface layer is SiON layer. The density of N–H and Si–H bonding within the stacked structure strongly depends on the PDA temperature. Our study helps elucidate the properties of SiN_x films in stacked structures from various perspectives.     

Effect of substituent position in coumarin derivatives on the interfacial assembly: reversible photodimerization and supramolecular chirality

The Langmuir and Langmuir-Schaefer (LS) films of two coumarin derivatives, 4-octadecyloxylcoumarin (4-CUMC18) and 7-octadecyloxylcoumarin (7-CUMC18), were newly synthesized, and their interfacial assemblies were investigated. Owing to the different substituent position of the long octadecyloxy chain in the coumarin parent, the two compounds showed completely different behaviors in the interfacial assemblies. When they were spread at the air/water interface, 7-CUMC18 formed a monolayer while 4-CUMC18 formed a multilayer film on the water surface. The spreading films on the water surface were transferred onto solid substrates by a Langmuir-Schaefer method, and the transferred films were characterized by UV-vis, Fourier transfer infrared, X-ray diffraction, circular dichroism, and atomic force microscopy spectra. Different packing of the molecules in the multilayer films was observed. While coumarin groups stacked in a face-to-face way in 7-CUMC18 film, they stacked in a head-to-tail manner in 4-CUMC18 film. Furthermore, distinct properties of the multilayer films were observed. It is revealed that a reversible [2+2] photodimerization and photocleavage could be induced in the LS film of 7-CUMC18 under photoirradiation with UV light of 365 and 254 nm, respectively. No photodimerization occurred in the 4-CUMC18 film. However, the film of 4-CUMC18 showed a supramolecular chirality although the compound itself is achiral.     

Adsorption behaviors of DPPC/MO aggregates on SiO2 surfaces

The adsorption kinetics of extruded 1,2-dipalmitoyl- sn-glycero-3-phosphatidylcholine (DPPC)/1-(cis-9-octadecenoyl)- rac-glycerol (monoolein, MO) aggregates on SiO 2 surface at 25 degrees C is investigated in real time, using the dissipative quartz crystal microbalance (QCM) technique. Four adsorption pathways have been identified depending on the molar fraction of MO in the DPPC/MO system: (I) intact vesicle adsorption, (II) vesicle reorganization on a SiO 2 surface, (III) supported lipid bilayer (SLB) formation, and (IV) cubosome adsorption. The results can be understood by the fact that DPPC is a lamellar phase-forming lipid, whereas MO prefers the cubic phase. Therefore, the incorporation of MO in DPPC increases the packing parameter. Equally important, MO also increases the mobility of lipid molecules and lateral pressure in the bilayers as a result of the presence of a unique cis- double bond. Before extrusion, the vesicles size increases with the MO content when X MO or= 0.8. The extruded DPPC/MO suspensions consist of reformed vesicles for X MO or= 0.8, all with a uniform diameter of approximately 100 nm. Differential scanning calorimetry (DSC) further indicates that the addition of MO lowers the main phase transition temperature of DPPC and thus makes the hydrophobic interior more fluid.     

An SFG study of interfacial amino acids at the hydrophilic SiO2 and hydrophobic deuterated polystyrene surfaces

Sum frequency generation (SFG) vibrational spectroscopy was employed to characterize the interfacial structure of eight individual amino acids--L-phenylalanine, L-leucine, glycine, L-lysine, L-arginine, L-cysteine, L-alanine, and L-proline--in aqueous solution adsorbed at model hydrophilic and hydrophobic surfaces. Specifically, SFG vibrational spectra were obtained for the amino acids at the solid-liquid interface between both hydrophobic d(8)-polystyrene (d(8)-PS) and SiO(2) model surfaces and phosphate buffered saline (PBS) at pH 7.4. At the hydrophobic d(8)-PS surface, seven of the amino acids solutions investigated showed clear and identifiable C-H vibrational modes, with the exception being l-alanine. In the SFG spectra obtained at the hydrophilic SiO(2) surface, no C-H vibrational modes were observed from any of the amino acids studied. However, it was confirmed by quartz crystal microbalance that amino acids do adsorb to the SiO(2) interface, and the amino acid solutions were found to have a detectable and widely varying influence on the magnitude of SFG signal from water at the SiO(2)/PBS interface. This study provides the first known SFG spectra of several individual amino acids in aqueous solution at the solid-liquid interface and under physiological conditions.     

Alpha-activation analysis of boron on Si surface and in Si and SiO2 films

Brazil has become the largest producer of biomass ethanol derived from sugar cane. The industrial production is based on the fermentation of sugar cane juice by yeast, inside of large volume vats, in a fed-batch process that recycles yeast cells. To study the dynamics of chemical elements in each operating cycle, five stages of the fementation process were considered: must, yeast suspension, wine, non-yeast wine and yeast cream. For this, a mass balance of the terrigenous elements, Ce, Co, Cs, Eu, Fe, Hf, La, Na, Sc, Sm, and Th, and the sugar cane plant elements, Br, K, Rb, and Zn, were established in fementation vats of an industrial scale unit, with sampling undertaken during different climatic conditions (dry and rainy periods). A similar distribution of the sugar cane characteristics elements was found for the stages analysed, while for the terrigenous elements a trend of accumulation in the yeast cream was observed. Preferential absorption of Br, K, Rb, and Zn by yeast cells was indicated by the smaller concentrations observed in yeast suspension than in yeast cream.     

Formation of linear supramolecular polymers that is based on host-guest assembly in water

Cucurbit[n]urils (n = 7, 8) and thiazole orange (TO) dyes in aqueous media were found to form host-guest inclusions in different stoichiometries. Supramolecular structures and linear supramolecular polymers were observed through the hydrophobic effect and π-π interactions in aqueous solution.     

Gd2CuO4薄膜与Si, SiO2/Si基底界面相互作用研究

采用XRD和俄歇电子能谱（AES）等技术研究了钙钛矿型Gd2CuO4薄膜与基底Si和SiO2/Si的界面相互作用,发现衬底对Gd2CuO4薄膜的晶化特性有很大影响,以单晶Si为基镀时,Gd2CuO4薄膜经600℃热处理1h即可形成钙钛矿型晶体结构,而以SiO2/Si为基底时,经700℃热处理1h能形成较完善的钙钛矿型晶体结构,Gd2CuO4薄膜的晶粒度随热处理温度的升高而增大,热处理时间对晶粒度则影响较小,AES深度剖析表明,形成的薄膜组成均匀,在界面上有一定程度的扩散,以Si为基底时,Gd2CuO4与基底Si相互扩散,以SiO2/Si为基底时则主要是薄膜中Gd,Cu向SiO2层中的扩散,AES线性分析表明,在薄膜与基底的界面上,各元素的俄歇电子动能发现位移,表明基底作用使界面上元素的化学环境发生了变化。     

pH-controlled assembly of two new supramolecular hybrid compounds based on Keggin polyoxotungstates

Two supramolecular compounds based on Keggin polyoxotungstates, (4,4′-H₂bpy){[Cu(4,4′-bpy)]₂[SiW₁₂O₄₀]} (1) and (4,4′-H₂bpy)₂[SiW₁₂O₄₀]·2H₂O (2) have been synthesized and characterized by elemental analyses, IR, UV, XPS spectra, TG analyses, and single crystal X-ray diffraction analyses. Compound 1 exhibits an infinite 1-D ladder like structure, which is further interconnected into a 3-D supramolecular framework via hydrogen bonding interactions. Compound 2 contains 4,4′-bipyridine (4,4′-bpy), pseudo-Keggin polyoxoanions [SiW₁₂O₄₀]^4?, and water molecules. Polyoxoanions together with water molecules in 2 construct a 3-D inorganic supramolecular network through O···O and O···Ow(1) interactions. The electrochemical behaviors and photocatalytic properties of 1 and 2 have been investigated.     

Ultra‐thin SiO2 on Si IX: absolute measurements of the amount of silicon oxide as a thickness of SiO2 on Si

Results from a study conducted between National Metrology Institutes (NMIs) for the measurements of the absolute thicknesses of ultra‐thin layers of SiO₂ on Si are reported. These results are from a key comparison and associated pilot study under the auspices of the Consultative Committee for Amount of Substance. ‘Amount of substance’ may be expressed in many ways, and here the measurand is the thickness of the silicon oxide layers with nominal thicknesses in the range 1.5–8 nm on Si substrates, expressed as the thickness of SiO₂. Separate samples were provided to each institute in containers that limited the carbonaceous contamination to approximately < 0.3 nm. The SiO₂ samples were of ultra‐thin on (100) and (111) orientated wafers of Si. The measurements from the laboratories which participated in the study were conducted using ellipsometry, neutron reflectivity, X‐ray photoelectron spectroscopy or X‐ray reflectivity, guided by the protocol developed in an earlier pilot study. A very minor correction was made in the different samples that each laboratory received. Where appropriate, method offset values attributed to the effects of contaminations, from the earlier pilot study, were subtracted. Values for the key comparison reference values (agreed best values from a Consultative Committee study) and their associated uncertainties for these samples are then made from the weighted means and the expanded weighted standard deviations of the means of these data. These results show a dramatic improvement on previous comparisons, leading to 95% uncertainties in the range 0.09–0.27 nm, equivalent to 0.4–1.0 monolayers over the 1.5–8.0 nm nominal thickness range studied. If the sample‐to‐sample uncertainty is reduced from its maximum estimate to the most likely value, these uncertainties reduce to 0.05–0.25 nm or ～1.4% relative standard uncertainties. The best results achieve ～1% relative standard uncertainty. It is concluded that XPS has now been made fully traceable to the SI, for ultra‐thin thermal SiO₂ on Si layers, by calibration using wavelength methods in an approach that may be extended to other material systems. © Crown copyright 2009. Reproduced with the permission of Her Majesty's Stationery Office. Published by John Wiley & Sons, Ltd.