Theoretical study on the band structure and optical properties of 4H-SiC

We have studied the band structure and optical properties of 4H-SiC by using a full potential linearized augmented plane waves (FPLAPW) method. The density of states (DOS) and band structure are presented. The imaginary part of the dielectric function has been obtained directly from the band structure calculation. With band gap correction, the real part of the dielectric function has been derived from the imaginary part by the Kramers－Kronig (KK) dispersion relationship. The values of reflectivity for normal incidence as a function of photon energy have also been calculated. We found the theoretical results are in good agreement with the experimental data.     

Broadband dielectric function of nonequilibrium warm dense gold

We report on the first single-state measurement of the broadband (450-800 nm) dielectric function of gold isochorically heated by a femtosecond laser pulse to energy densities of 10(6) - 10(7) J/kg. A Drude and an interband component are clearly seen in the imaginary part of the dielectric function. The Drude component increases with energy density while the interband component shows both enhancement and redshift. This is in strong disagreement with predictions of a recent calculation of dielectric function based on limited Brillouin zone sampling.     

Experimental and theoretical determination of the low-loss electron energy loss spectroscopy of nanostructured ZnO

The dielectric properties of nanostructured wurtzite-type ZnO are studied by analyzing the low-loss region of the electron energy loss spectroscopy (EELS) in a transmission electron microscope. Characteristic peaks at about 12 and 32 eV in the imaginary part of the dielectric function shift to lower energies as particle size decreases. A comparison of experimental EELS spectra and ab initio density-functional theory calculations (WIEN2k code) within the generalized gradient approximation (GGA), GGA+U and modified Becke-Johnson (mBJ) is presented. The origins of interband transitions are identified in the electronic band structure by calculating the partial imaginary part of the dielectric function and the partial density of states of Zn and O.     

Theoretical Studies on Photoionization Cross Sections of Solid Gold

Accurate expression for photoabsorption (photoionization) cross sections of high density system proposed recently is used to study the photoionization of solid gold. The results show that the present theoretical photoionization cross sections have good agreement both in structure and in magnitude with the experimental results of gold crystal. The studies also indicate that both the real part ε' and the imaginary part ε" of the complex dielectric constant ε, and the dielectric influence function of a nonideal system have rich structures in low energy side with a range about 50 eV, and suggest that the influence of particle interactions of surrounding particles with the photoionized particle on the photoionization cross sections can be easily investigated using the dielectric influence function. The electron overlap effects are suggested to be implemented in the future studies to improve the accuracy of theoretical photoionization cross sections of a solid system.     

Ta掺杂对ZnO光电材料性能影响的研究

采用基于密度泛函理论第一性原理的方法, 研究了Ta掺杂ZnO的电子结构和光学性质. 计算结果表明: 掺入Ta原子后, 费米能级进入导带, 随着掺杂浓度的增加, 带隙逐渐变窄, 介电函数虚部、吸收系数、反射率和折射率均发生明显变化, 介电函数虚部和反射率均向高能方向移动, 吸收边发生红移, 从理论上指出了光学性质和电子结构的内在联系.     

Anisotropic Intervalley Plasmon Excitations in Graphene

We investigate theoretically the intervalley plasmon excitations(IPEs) in graphene monolayer within the random-phase approximation. We derive an analytical expression of the real part of the dielectric function. We find a lowenergy plasmon mode with a linear anisotropic dispersion which depends on the Fermi energy and the dielectric constant of substrate. The IPEs show strongly anisotropic behavior, which becomes significant around the zigzag crystallographic direction. More interestingly, the group velocity of IPE varies from negative to positive, and vanishes at special energy.     

黑索金电子结构和光学性质的第一性原理研究

利用基于密度泛函理论的第一性原理方法对黑索金晶体的电子结构和光学性质进行了计算. 结果表明: 黑索金是能隙值为3.43 eV的绝缘体, 价带主要由C, N和O的2s与2p态构成, 而导带主要由N-2p和O-2p态构成; 静态介电函数ε₁(0)=1.38, 介电常数的虚部有5个峰值, 其中最大峰值在光子能量4.59 eV处, 并对造成这些峰值的可能的电子跃迁做了详细分析. 利用能带结构和态密度分析了黑索金的光反射系数、吸收系数及能量损失函数等光学性质, 发现黑索金是对光吸收、反射及能量损失不敏感的材料. 关键词： 黑索金 第一性原理 电子结构 光学性质     

Tuning the plasmon energy of palladium-hydrogen systems by varying the hydrogen concentration

First-principles calculations are performed to obtain the dielectric function and loss spectra of bulk PdH(x). Hydrogen concentrations between x = 0 and 1 are considered. The calculated spectra are dominated by a broad peak that redshifts in energy with x. The obtained bulk dielectric function is employed to compute the loss spectra of PdH(x) spherical nanoparticles as a function of x. The dominant plasmon peak in the spherical nanoparticle is lowered in energy with respect to the bulk case. However, the dependence of the resonance energy on the hydrogen concentration is roughly similar to that in bulk.     

Fe,Ni掺杂CdS的电子结构和光学性质

基于密度泛函理论（DFT）的第一性原理研究了Fe,Ni单掺杂和（Fe,Ni）共掺杂CdS的能带结构、电子态密度分布、介电常数和光学吸收系数,分析了掺杂后电子结构和光学性质的变化.计算结果表明:掺杂体系的CdS晶格常量均减少,能带宽度减小,介电函数虚部ε₂（ω）都在0.53 eV左右出现了一个新峰,吸收光谱发生明显的红移,它们均在1.35 eV处出现较强吸收峰.     

B,P掺杂β-Si3N4的电子结构和光学性质研究

运用第一性原理方法, 计算了B, P两种元素单掺杂和共掺杂的β -Si₃N₄材料的电子结构和光学性质. 结果表明: B掺杂体系的稳定性更高, 而P掺杂体系的离子性更强; 单掺和共掺杂均窄化带隙, 且共掺在禁带中引入深能级, 使局域态增强; 单掺杂体系介电函数虚部、吸收谱和能量损失谱各峰均发生红移、幅值减小, 而共掺后介电函数虚部主峰出现蓝移、能量损失峰展宽、高能区电子跃迁大大增强, 且控制共掺杂的B, P比例可获得较低的带电缺陷浓度.     

第一性原理研究Be-S共掺杂AlN纳米片的电子结构和光学性质

基于密度泛函理论体系下广义梯度近似(GGA),利用第一性原理方法计算了Be替代Al、S替代N和Be-S共掺杂对氮化铝纳米片的电子结构和光学性质的影响.计算结果表明,掺杂改变了氮化铝纳米片的带隙,但仍显示半导体特性. Be掺杂类型对氮化铝纳米片的晶体结构影响不大,而S掺杂和Be-S共掺杂都使得氮化铝纳米片有不同程度的弯曲.同时Be-S共掺杂中S原子起到激活受主杂质Be原子的作用,使得受主能级向低能方向移动.共掺杂比单掺杂具有更高的受主原子浓度,并减小局域化程度.光学性质也发生较大改变:S原子掺杂氮化铝纳米片的介电函数虚部出现第二介电峰,Be掺杂和Be-S共掺杂使得损失谱的能量区间有所展宽,峰值降低并向高能区移动.     

Uniaxial stress influence on lattice, band gap and optical properties of n-type ZnO:first-principles calculations

The lattice, the band gap and the optical properties of n-type ZnO under uniaxial stress are investigated by first-principles calculations. The results show that the lattice constants change linearly with stress. Band gaps are broadened linearly as the uniaxial compressive stress increases. The change of band gap for n-type ZnO comes mainly from the contribution of stress in the c-axis direction, and the reason for band gap of n-type ZnO changing with stress is also explained. The calculated results of optical properties reveal that the imaginary part of the dielectric function decreases with the increase of uniaxial compressive stress at low energy. However, when the energy is higher than 4.0 eV, the imaginary part of the dielectric function increases with the increase of stress and a blueshift appears. There are two peaks in the absorption spectrum in an energy range of 4.0-13.0 eV. The stress coefficient of the band gap of n-type ZnO is larger than that of pure ZnO, which supplies the theoretical reference value for the modulation of the band gap of doped ZnO.     

Study of oxide interlayers formed reactively at a silver-electrolyte boundary

The differential reflectance of reactively oxidized vs unoxidized silver foils in aqueous potassium hydroxide has been measured in the 1.5 to 5 eV energy range. From these results the imaginary part of the dielectric constant of the oxide can be determined directly in the free-electron region of silver, and the zero-frequency interband contribution to the dielectric function of the oxide-covered metal can be estimated. The scattering contribution to the reflectance from the oxide surface non-uniformities is discussed.     

Dielectric Properties of GaN in THz Frequencies

The complex refractive indices and the dielectric function of GaN for frequencies ranging from 0.25 to 1.22THz are obtained using THz time-domain spectroscopy. The real part of the dielectric function first decreases from 0.25 to 0.42THz and then oscillates from 0.42 to 1.22THz, whereas the imaginary part of the dielectric function is oscillating within the whole range of frequency. The simple Drude model is extended to take into account the effect of defects on the dielectric function. The extended model is in agreement with the experimental data.     

Effect of quantum confinement on the dielectric function of PbSe

Monolayers of lead selenide nanocrystals of a few nanometers in height have been made by electrodeposition on a Au(111) substrate. These layers show a thickness-dependent dielectric function, which was determined using spectroscopic ellipsometry. The experimental results are compared with electronic structure calculations of the imaginary part of the dielectric function of PbSe nanocrystals. We demonstrate that the size-dependent variation of the dielectric function is affected by quantum confinement at well-identifiable points in the Brillouin zone, different from the position of the band-gap transition.     

光吸收介质的吸收系数与介电函数虚部的关系

讨论了相对介电函数虚部和消光系数与光吸收的关系,指出吸收系数与消光系数成正比,而吸收系数与相对介电函数虚部成正比是有条件的.     

Dispersion relations as a criterion for the imaginary part of a spectral function

With the help of the dispersion relation inequalities are derived as criteria for determining the imaginary part of the spectral function (scattering amplitude, dielectric constant, ...) in the finite interval with a chosen upper limit, on the assumption that the real part of the analytic function at a single point is known.The applicability for measurements of the elastic processes of strong interactions is discussed and with the help of criteria calculations for the imaginary part of the dielectric constant of lead selenide in an experimentally inaccessible region are carried out.     

New insight into the optical properties of amorphous Ge and Si

A short range disorder model, unlike present long range disorder theories, has been able to account well for both the density of states and the optical properties of amorphous Ge and Si. Our results indicate that the imaginary part of the dielectric function for amorphous Ge and Si has the same form as an averaged gradient matrix element as a function of energy. This conclusion should be valid for all tetrahedrally bonded amorphous solids.     

Al和Ni共掺ZnO光学性质的第一性原理研究

利用第一性原理方法研究了纯ZnO以及掺杂Al,Ni和（Al,Ni）共掺的ZnO材料,对掺杂前后晶体的几何结构、能带结构和电子态密度,特别是光学性质进行了比较分析. 计算结果表明,纯ZnO与Al-ZnO,Ni-ZnO和（Al,Ni）-ZnO的介电函数虚部在低能区有明显的差异,但在高能区则较为相似. 在光学性质上,Al-ZnO较之Ni-ZnO在可见光区的吸收系数和反射率都非常低,反映其在可见光区有高透过率. 而两原子共掺后的（Al,Ni）-ZnO,其光学性质较之单原子掺杂的情况有非常显著的变化. 关键词： ZnO 掺杂 第一性原理 光学性质     

Optische Eigenschaften des einkristallinen Siliziums aus Elektronenenergieverlustmessungen

Electron energy loss measurements on Si-monocrystals with fast electrons in transmission have been carried out to determine the energy loss function Im—1/. The real and imaginary part of the dielectric constant have been deduced from the Kramers-Kronig relation. The results are compared with those obtained from optical reflectance data. The energy loss function obtained from these energy loss experiments is found to be in good agreement with theoretical calculations.