一种基于微通道板的脉冲X射线时间谱仪

为适应新型超快闪烁材料研究的需要,在原有脉冲X射线时间谱仪的基础上,通过改装微通道板光电倍增管(MCP-PMT),并采用具有快时间响应的前置放大器(FPA)和恒比甄别器(CFD)的方法,使谱仪的时间分辨极限提高到170 ps左右.BaF2晶体闪烁光快成分衰减时间谱的测量结果表明:该谱仪可很好地满足新型超快闪烁材料发光衰减时间特性的研究.     

高效率的正电子湮没2γ和3γ寿命谱仪

用大体积BaF_2(φ40mm×30mm)探测器组装正电子湮没的2γ和3γ寿命谱仪,在2γ方式下,两个BaF_2探测器构成双重符合,得到系统的时间分辨为FWHM=212ps,计数效率比塑料闪烁探测器组装的谱仪估计高10倍以上.在3γ方式下,NaI(Tl)探测器与两个BaF_2构成三重符合,合理安排三探头的几何及合理选择各能窗的位置以优化对3γ湮没事例的测量,实验表明,新系统可用于研究强度微弱的电子偶素在固体中湮没的3γ寿命谱.     

国产BaF_2闪烁晶体特性的测试

观察到了人工晶体所生长的BaF_2闪烁晶体发光的快、慢成分,并对其光产额、时间分辨率、能量分辨率、能量线性、技术衰减长度等特性进行了测试。对Co~(60)γ源,时间分辨率(标准偏差σ)为59ps(微微秒);对Cs~(137)γ源,能量分辨率为12.1％。这些指标都接近国际BaF_2闪烁晶体先进水平,展现出在核物理、核医学、粒子物理实验中应用的广泛前景。     

皮秒时间相关单光子计数光谱仪的核心技术

研制的皮秒时间相关单光子计数光谱仪利用时间相关单光子计数(TCSPC)技术,采用了具有分光时间弥散动态和静态补偿特性的光栅分光系统,解决了传统分光系统的光信号时间弥散问题;使用多道谱分析仪开设时间窗口,测量荧光衰减曲线和时间分辨光谱;用荧光衰减曲线的多指数拟合方法处理数据。给出了光谱仪的原理和总体方案,介绍了系统的集成和工作流程。通过各种标准样品的试验数据分析和对比,得出系统所测荧光寿命可达到ps量级,而且具有最高的灵敏度——单光子计数,时间分辨率达到8．8ps。     

高效率的正电子湮没2γ和3γ寿命谱仪

用大体积BaF₂ (φ40mm×30mm)探测器组装正电子湮没的2γ和3γ寿命谱仪,在2γ方式下,两个BaF₂探测器构成双重符合,得到系统的时间分辨为FWHM=212ps,计数效率比塑料闪烁探测器组装的谱仪估计高10倍以上.在3γ方式下,NaI(Tl)探测器与两个BaF₂构成三重符合,合理安排三探头的几何及合理选择各能窗的位置以优化对3γ湮没事例的测量,实验表明,新系统可用于研究强度微弱的电子偶素在固体中湮没的3γ寿命谱.     

基于北京慢正电子强束流的微脉冲化系统设计

慢正电子湮没寿命测量是研究材料表面微观缺陷的重要分析方法．束团化系统是实现慢正电子湮没寿命测量的核心部件, 主要由斩波、聚束两部分组成, 它可以将随时间连续分布的束流束团化, 从而获得正电子湮没寿命测量的时间起点及满足时间分辨率要求的束团．本文以粒子动力学计算为基础, 完成了束团化系统的物理设计, 其时间分辨率设计值为150ps(FWHM)．     

国产BaF2闪烁晶体特性的测试

观察到了人工晶体所生长的BaF₂闪烁晶体发光的快、慢成分, 并对其光产额、时间分辨率、能量分辨率、能量线性、技术衰减长度等特性进行了测试. 对Co⁶⁰ γ源, 时间分辨率(标准偏差σ)为59ps(微微秒); 对Cs¹³⁷ γ源, 能量分辨率为12.1%. 这些指标都接近国际BaF₂闪烁晶体先进水平, 展现出在核物理、核医学、粒子物理实验中应用的广泛前景.     

超快微光分子光谱探测技术研究

按照超快极微弱分子吸收光谱学,荧光光谱学,时间分辨光谱学以及偏振荧光光谱学探测特性,设计、集成组建了能够探测紫外－可见－红外快到飞秒时间分辨的单分子光学事件的激光瞬态光谱仪.其光源有从300 nm到3000 nm连续可调的飞秒激光器、纳秒氢灯及连续氙灯.光谱分辨率达0.05 nm,在泵浦探测差异吸收下有小于150 fs的时间分辨率.谱仪能够实时给出光谱曲线及生物分子组分寿命.利用该谱仪探测了PSⅡCC,PSⅡRC的能量传递动力学.在83 K温度下PSⅡCC中的β-Car分子接收507 nm光能,以单步跃迁和随机转移的方式通过Chl a641.5637/638分子传递光能到反应中心Chl a683.2680/681,平均传能时间为77 ps,有59.94％的组分用355 ps时间电荷重组.在PSⅡRC中的β-Car分子接收507 nm光能,由Chl a641.5637/638分子传递光能通过Chl a678.2675.5到反应中心,平均传能时间为88.5 ps.在83 K温度下,反应中心复合物离子对;P680+·pheo-］平均再复合寿命为19.35 ns.     

基于移位双光栅色散元件的X射线谱仪研制

本文针对激光等离子体X射线诊断的需求,设计开发了移位双光栅X射线谱仪.该谱仪采用高线对密度和低线对密度的两种光栅组成移位双光栅作为核心衍射组件,高密度光栅能够提高中、高能区(1000—5000 eV)的能谱分辨率,低密度光栅足够满足低能区(100—1000 eV)测量的能谱分辨率要求,控制了低能区谱线的分布空间,保证足够的测量范围.两种光栅相互配合实现了谱仪整体性能提升.本文提出了移位双光栅X射线谱仪结构设计方法和参数指标,完成了移位双光栅X射线谱仪的集成调试和实验应用,获得了时间分辨的X光谱实验数据,测谱范围0.1—5.0 keV,谱分辨0.04 nm,时间分辨好于30 ps.移位双光栅X射线谱仪可以最大程度地利用记录面的长度,实现高时间分辨和宽谱X射线测量.     

北京谱仪(BESⅡ)的飞行计数器(TOF)时间和分辨率的修正

随着北京谱仪上5800万J/ψ数据的获取,为了获得较好的物理结果,必须有很好的粒子鉴别.鉴于北京谱仪Ⅱ飞行时间计数器(TOF)对粒子鉴别的特殊重要性,有必要对飞行时间计数器的时间测量和分辨率进行研究.本文利用北京谱仪Ⅱ已获取的5800万J/ψ数据,对飞行时间计数器的时间和分辨率进行修正,最后给出修正结果以及修正后的鉴别效率.     

上海光源XAFS线站时间分辨X射线激发发光谱实验系统

介绍了上海光源XAFS线站（BL14W1）的时间分辨X射线激发发光光谱（TRXEOL）实验系统。该系统基于时间相关单光子计数法的原理设计,以同步辐射光源的脉冲特性及其良好的时间结构为基础,通过集成定时系统、光谱仪系统和核电子学系统,在国内同步辐射装置上首次实现了TRXEOL实验方法。定时系统提供同步触发电脉冲,用来标志X射线脉冲打到样品上的时刻,同步精度约6 ps,延时分辨率5 ps;光谱仪经光电探测器把样品发光信号转换成电脉冲,核电子学系统对定时电脉冲和发光电脉冲之间的时间差进行统计分析,可得到样品的发光衰减曲线,再结合光谱仪的扫描控制和数据获取系统,可得到样品的TRXEOL光谱。利用该实验系统可以测量发光样品的普通XEOL光谱、发光衰减曲线和TRXEOL光谱。用ZnO纳米线样品,进行了实验验证。实验得到的普通XEOL光谱能够明显区分该样品在390和500 nm处的两个发光中心;得到的发光衰减曲线能够区分小于2 ns的快发光过程和200 ns的慢发光过程;分别在0～1, 2～200和0～200 ns时间窗口内测量得到了ZnO纳米线样品的TRXEOL光谱,在这3个发光时间带内得到了对应的发光信息;ZnO纳米线样品发光衰减曲线快发光峰的半高宽约为0.5 ns,证明了TRXEOL系统的最小时间分辨率小于1 ns。该系统在国内同步辐射装置上提供了用于研究发光材料的TRXEOL实验方法,该方法与发光模式的XAFS方法相结合,可更深入的研究发光材料的发光行为。整个实验平台操作简便、工作稳定可靠,不仅为发光材料的研究提供了研究手段,还为进一步开展发光模式XAFS和TRXEOL成像等实验方法提供技术前提。     

Using a LaBr3:Ce scintillator for positron annihilation lifetime spectroscopy

A LaBr₃:Ce scintillator has a high light output (~60000 p.e/MeV) and a short decay constant (<25 ns), which makes it good for time spectrometry. Compared with a BaF₂ scintillator, it can bear a much higher count rate, and can be coupled to photomultipliers without using a quartz window. In this work, a positron annihilation lifetime spectrometer (PALS) consisting of two bulks of φ25 mm×25 mm LaBr₃:Ce scintillator coupled to two XP20D0 photomultipliers, respectively, was built. A time resolution of FWHM=206 ps was measured for the PALS with a ⁶⁰Co source at the energy window for ²²Na. With this spectrometer, a reasonable lifetime value τ=221±4 ps in a pure Si sample is obtained, which means that the utilization of LaBr₃:Ce as the detector for a PALS is feasible.     

Yb:YAG晶体性能实验测量

为了测量脉冲时间宽度小于20 ns时的射线时间分辨图像,发展了新型无机闪烁体Yb:YAG,并实验测量了晶体的发光衰减时间、X射线激发发光光谱、相对发光效率和空间分辨等性能,研究了Yb:YAG晶体的发光性能。实验表明,Yb:YAG发光有三种衰减成分,快成分衰减常数为1.2 ns,慢成分衰减常数与射线种类有关;X射线激发发光光谱在250~800 nm范围,有三个发光峰,分别为320,380和500 nm,且320 nm处强度最大;相对发光效率为1900 ph/MeV;使用钨分辨卡测得Yb: YAG空间分辨能力为2 lp/m,使用刀口法测得空间调制传递函数为0.5时的频率为0.7 lp/mm。结果说明Yb:YAG晶体性能能够满足所需测量要求。     

新型超快探测器性能研究

 为提高强g 场超快辐射探测器抗信号堆积的性能，可采用BaF₂（La）与快的光电器件组合的技术途径。用同步辐射闪烁荧光衰减谱仪和X光激发发射谱仪测量了国产不同掺La浓度的BaF₂晶体抑制快慢成分之比，探讨掺La对抑制慢成分的机理，研究了BaF₂（La）抗辐照性能。并用同步辐射测量BaF₂（La）与GD40Z光电管组成超快辐射探测器的快慢成分抑制比。     

Size-dependent optical properties and carriers dynamics in CdSe/ZnS quantum dots

Size-dependence of optical properties and energy relaxation in CdSe/ZnS quantum dots （QDs） were investigated by two-colour femtosecond （fs） pump-probe （400/800 nm） and picosecond time-resolved photoluminescence （ps TRPL） experiments. Pump-probe measurement results show that there are two components for the excited carriers relaxation, the fast one with a time constant of several ps arises from the Auger-type recombination, which shows almost particle sizeindependence. The slow relaxation component with a time constant of several decades of ns can be clearly determined with ps TRPL spectroscopy in which the slow relaxation process shows strong particle size-dependence. The decay time constants increase from 21 to 34 ns with the decrease of particle size from 3.2 to 2.1 nm. The room-temperature decay lifetime is due to the thermal mixing of bright and dark excitons, and the size-dependence of slow relaxation process can be explained very well in terms of simple three-level model.     

Luminescence of dense, octahedral structured crystalline silicon dioxide (stishovite)

It is obtained that, as grown, non-irradiated stishovite single crystals possess a luminescence center. Three excimer pulsed lasers (KrF, 248 nm; ArF, 193 nm; F₂, 157 nm) were used for photoluminescence (PL) excitation. Two PL bands were observed. One, in UV range with the maximum at 4.7±0.1 eV with FWHM equal to 0.95±0.1 eV, mainly is seen under ArF laser. Another, in blue range with the maximum at 3±0.2 eV with FWHM equal to 0.8±0.2 eV, is seen under all three lasers. The UV band main fast component of decay is with time constant τ=1.2±0.1 ns for the range of temperatures 16-150 K. The blue band decay possesses fast and slow components. The fast component of the blue band decay is about 1.2 ns. The slow component of the blue band well corresponds to exponent with time constant equal to 17±1 μs within the temperature range 16-200 K. deviations from exponential decay were observed as well and explained by influence of nearest interstitial OH groups on the luminescence center. The UV band was not detected for F₂ laser excitation. For the case of KrF laser only a structure less tail up to 4.6 eV was detected. Both the UV and the blue bands were also found in recombination process with two components having characteristic time about 1 and 60 μs. For blue band recombination luminescence decay is lasting to ms range of time with power law decay ∼t⁻¹.For the case of X-ray excitation the luminescence intensity exhibits strong drop down above 100 K. such an effect does not take place in the case of photoexcitation with lasers. The activation energies for both cases are different as well. Average value of that is 0.03±0.01 eV for the case of X-ray luminescence and it is 0.15±0.05 eV for the case of PL. So, the processes of thermal quenching are different for these kinds of excitation and, probably, are related to interaction of the luminescence center with OH groups.Stishovite crystal irradiated with pulses of electron beam (270 kV, 200 A, 10 ns) demonstrates a decrease of luminescence intensity excited with X-ray. So, irradiation with electron beam shows on destruction of luminescent defects.The nature of luminescence excited in the transparency range of stishovite is ascribed to a defect existing in the crystal after growth. Similarity of the stishovite luminescence with that of oxygen deficient silica glass and induced by radiation luminescence of α-quartz crystal presumes similar nature of centers in those materials.     

Radiative recombination of free excitons in GaAs quantum wells

We have measured the radiative lifetime of excitons in GaAs quantum wells under resonant excitation at 10 K using time resolved luminescence spectroscopy with 6 ps time resolution. The luminescence decay has two components: a fast one with a time constant τ₁ (∼ 17 - 40 ps) and a slow one with a time constant τ₂ (∼ 80 - 300 ps). τ₂ is the lifetime of thermalised excitens at 10 K. τ₁ is due to two mechanisms in parallel: the radiative recombination of excitons with k_u < K₀ and the scattering by acoustical phonens into non radiative exciton states (k_u > k₀ and J = 2). The variation with temperature of τ₁ gives the lifetime of the excitons at k = 0, τ₀, which varies between 20 and 50 ps depending on the sample.     

水溶性CdTe量子点的稳态和纳秒时间分辨光致发光光谱

报道了以飞秒脉冲激光为激发光源的水溶性CdTe量子点(QDs)的稳态荧光光谱和纳秒时间分辨荧光光谱.实验发现CdTe量子点的荧光光谱峰值位置随激发波长变化发生明显移动，激发脉冲波长越长，荧光峰位红移越大.荧光动力学实验数据显示，在400nm和800nm脉冲激光激发下，水溶性CdTe量子点的荧光光谱中均含有激子态和诱捕态两个衰减成分，两者的发射峰相距很近，诱捕态的发射峰波长较长.在800nm脉冲激光激发下的诱捕态成分占总荧光强度的比重比400nm激发下的约高3倍，其相对强度的这种变化导致了稳态荧光发射峰位的红移. 关键词： CdTe 量子点 时间分辨 荧光光谱 上转换荧光     

Further performance tests of a picosecond X-ray and laser induced streak camera system with fast scintillation materials

A further performance test of a fluorescence lifetime spectroscopy system with 2D-photon counting based on a streak camera was carried out. This system offers three different excitation light sources. It includes a pulsable X-ray tube with 40 kV and a laser. A pulsed UV-LED has been installed for sample excitation. The table top measurement device has a temporal resolution down to 20 ps after deconvolution and fluorescence/scintillation decay times can be evaluated in a wavelength selectable range between 200 and 850 nm. Cesium fluoride, cesium chloride and cesium bromide as fast core-valence luminescence emitters with a relatively low light yield were used in the presented performance test. The easily manageable system is able to detect low light levels and to determine the decay times in agreement with literature in most instances. Beside mentioned scintillators PbCO₃, SrI₂ and Lu₂SiO₅:Ce as a high light yield material were also measured.