行波电极硅-有机复合集成电光调制器理论分析与实验研究

对基于行波电极的硅-有机复合集成电光调制器进行研究,构建调制器的波导电极结构模型,分析特征阻抗和微波有效折射率对调制器频率响应的影响。通过对电极结构的仿真优化,完成调制器芯片的设计与制备,研究电光聚合物材料的片上极化工艺,得到高性能硅-有机复合集成电光调制器。对研制调制器电极的电学S(Scatter)参数进行测试,分析得到的电极特征阻抗和有效折射率与仿真设计结果基本相符。测试得到电光调制器的3 dB带宽大于50 GHz。     

Alq_3发光层厚度对有机电致发光器件性能的影响

文章以MoO3为空穴注入层,NPB为空穴传输层,改变发光/电子传输层Alq3的厚度,考察了器件电学和光学性能的变化。结果表明,随着Alq3层增加厚度,器件的电流逐步减小,由此获得Alq3薄膜的电场分布情况;器件发光光谱有少量红移,但长波端明显展宽,短波端强度下降。该文拟合了器件电致发光谱,与实验曲线吻合较好。同时拟合结果也表明,干涉效应主要影响光谱在长波端的强度分布,发光区域分布决定光谱在短波端的强度分布。     

高效集成电光调制器和开关的电极与光波导的优化设计

集成电光调制与开关的效率取决于光波导中电光重叠因子Γ的大小，直接影响此因子的有电极宽度、电极间距、光模场尺寸、以及电极与光波导的相对位置等参量。本文利用集成电光调制器电极电场的分布规律，研究了各种结构中影响电光重叠因子的诸参量之间的关系；根据实际工艺条件，应用系统优化方法尽可能对各种参量进行优化计算，得到了实现高效调制和开关的全部参量的优化设计结果。     

适用于任意电场分布和传播方向的电光器件仿真方法

提出了1种通用的三维电光器件仿真方法。该方法将有限元电场分析和电光效应耦合波理论相结合,通过求解电光器件的琼斯矩阵,计算了任意光传播方向和任意电场分布下的电光调制特性。以横向调制的Bi4Ge3O12(BGO)晶体光学电压传感器(OVS)为例,对该方法进行了详细说明。讨论了Bi_4Ge_3O_(12)晶体内的非均匀电场及光路偏移对测量精度的影响,给出了在不同的精度等级条件下的最大允许光路偏移。该方法为光学电压传感器和其他电光器件的设计和性能评估提供了参考依据。     

基于Wheeler's Conforming Mapping扩展变换法的聚合物电光调制器特性研究

基于Wheeler变换模型,提出了一种分析多层介质微波特征参数的方法--Wheeler's Conforming Mapping扩展变换法,并利用该方法得到了微波特征参数与各层介质参数之间的表达式,在此基础上分析了微带电极的微波特性参数. 与准静态有限元法(QS-FEM)相比,Wheeler's Conforming Mapping扩展变换法不仅计算准确而且具有更高的计算效率. 将该方法应用于聚合物电光调制器的特性研究,对传统模型进行改进,通过添加补偿层来调整微波等效折射率和特征阻抗,改善微波与光波有效折射率的失配度,在理论上实现了聚合物电光调制器的速率和阻抗的同时匹配. 关键词： Wheeler扩展变换法 微带电极 特征参数 等效介电常数     

双频容性耦合CF4等离子体放电的二维混合模拟

研究了等离子体反应装置内的等离子体密度、粒子能量与角度分布等参量在装置径向与轴向上的分布特性。在研究过程中应用二维混合模型对CF4气体放电进行模拟。计算结果显示:在电极表面与侧壁附近的鞘层区特性有明显的区别。由于装置侧壁处受电源产生的射频电场的影响较小,侧壁处的鞘层主要由双极扩散机制形成,其产生的径向电场强度较弱,鞘层厚度也较薄。而在电极附近,由于受到射频电场的影响,鞘层的厚度显著增加,指向电极方向的轴向电场强度也远大于指向侧壁方向的径向电场强度。在电极区域内,离子通量分布均匀;在电极边缘与侧壁的间隙内,因电场强度减小,离子通量则发生迅速衰减。在射频电极覆盖的范围内离子能量分布大体上保持不变,电极与侧壁的交界处,由于受到侧壁处径向电场的影响,离子能量分布略有不同。在放电装置的中心区域,入射到电极上的离子角度分布基本保持一致,而在电极边界与装置侧壁的交界处,由于径向电场的影响,离子的垂直入射角增加,以大角度轰击电极的离子数量也显著增加。     

超高速发射中缓冲层材料对钽飞片速度影响的数值分析

 在超高速发射技术研究中,缓冲层材料起着十分重要的作用。通过数值计算,分析了TPX缓冲层材料的厚度对高阻抗钽飞片超高速发射速度的影响,给出了最优的缓冲层材料厚度,对于0.3和0.5 mm厚的钽飞片,选取不同厚度的TPX缓冲层材料,钽飞片中心速度的相对误差达到5%～6%;为了比较不同缓冲层材料对钽飞片速度的影响,还给出了相同厚度的TPX和Lexan材料作缓冲层时,钽飞片的中心速度和压力历史的二维计算结果。     

渐变阻抗飞片超高速发射数值模拟

 为在轻气炮上实现二级飞片的超高速发射,设计了波阻抗连续变化的渐变阻抗飞片。变阻抗飞片撞击面为镁,底面为钨,中间为镁、铜和钨的掺合材料。建立了变阻抗飞片超高速发射的计算模型,采用分成单元层描述阻抗变化。对变阻抗飞片超高速发射二级飞片过程进行了数值模拟计算,分析了阻抗分布、二级飞片直径和缓冲层厚度对二级飞片速度的影响。结果表明：在优化阻抗分布、二级飞片直径和缓冲层厚度的条件下,二级飞片的最大速度能够达到16 km/s以上。     

基于传输矩阵法的聚合物太阳能电池光学性能分析

采用基于传输矩阵法的光学模型及Matlab软件,模拟了以聚合物P3HT:PCBM为活性层的倒装太阳能电池,并分析了模拟电池的吸光率及其内部光电场分布。探讨了厚度、入射角度以及新结构对电池光学性能的影响。模拟结果表明,电池的光吸收主要由活性层厚度决定,分别随着电子传输层和空穴传输层厚度的增加而下降。当光入射角度增大时,由于光程的增加电池的吸光率随之增加,在40°入射角时达到最大;由于其他光学作用,器件吸光率在40°入射角以后反而降低;证明了光斜入射时电场在整个器件中分布是不连续的。通过在基本结构的适当位置插入一层薄膜构成的微腔器件,由于光学共振效应能够有效提高电池的光吸收。     

阶梯AlGaN外延新型Al_(0.25)Ga_(0.75)N/GaNHEMTs击穿特性分析

为了优化AlGaN/GaN HEMTs器件表面电场,提高击穿电压,本文首次提出了一种新型阶梯AlGaN/GaN HEMTs结构.新结构利用AlGaN/GaN异质结形成的2DEG浓度随外延AlGaN层厚度降低而减小的规律,通过减薄靠近栅边缘外延的AlGaN层,使沟道2DEG浓度分区,形成栅边缘低浓度2DEG区,低的2DEG使阶梯AlGaN交界出现新的电场峰,新电场峰的出现有效降低了栅边缘的高峰电场,优化了AlGaN/GaN HEMTs器件的表面电场分布,使器件击穿电压从传统结构的446 V,提高到新结构的640 V.为了获得与实际测试结果一致的击穿曲线,本文在GaN缓冲层中设定了一定浓度的受主型缺陷,通过仿真分析验证了国际上外延GaN缓冲层时掺入受主型离子的原因,并通过仿真分析获得了与实际测试结果一致的击穿曲线.     

Broadband and low-driving-power LiNbO<Subscript>3</Subscript>electrooptic modulators

Microwave and optical properties of lithium niobate electrooptic modulators are investigated in this paper. The effect of simultaneous matching of optical and microwave velocities and impedance matching, conductor loss, dielectric loss on the optical bandwidth of an ultra-high-speed lithium niobate modulator are presented here. The metal electrode design, buffer thickness, ridge depth, and the gap between electrodes at different operating frequencies on device performance are thoroughly investigated by using the finite element method.     

Analysis of velocity-matched Ti:LiNbO3 optical intensity modulators with an extended point-matching method

The point-matching method has been extended to analyse a travelling-wave electrode structure for shielded velocity-matched Ti:LiNbO₃ Mach-Zehnder optical modulators. This method provides a simple and fast approach to analysing the coplanar waveguide with buffer layer, cover shield, and electrodes of finite thickness. The calculated characteristic impedances and microwave effective indices agree well with those obtained using the spectral domain technique and the finite-element method. It is found that in the coplanar waveguide without cover shield it is difficult to achieve velocity matching. The coplanar waveguide with cover shield can be used to achieve velocity matching, but the corresponding characteristic impedance is lower than 50. Both velocity matching and impedance matching can be obtained using a narrow centre electrode. The calculated electric field has been used to estimate the modulation efficiency of the device. Velocity matching can be achieved by adjusting the height of the cover shield, but a compromise must be made between high interaction efficiency and low microwave reflection when choosing the buffer layer thickness and the electrode thickness.     

Metallization thickness in bilateral and unilateral Finlines

The theory and numerical results are presented to the effective dielectric constant and characteristic impedance of bilateral and unilateral finlines with metallization thickness. The full wave analysis of the transverse transmission line — TTL method is used to determine the electromagnetic fields of the structure in Fourier transform domain — FTD. Applying the suitable boundary conditions and the moment method, a homogeneous matrix system is obtained and the effective dielectric constant is extracted. The characteristic impedance is obtained using the relation between the voltage in slot and the transmitted power.Computational programs are developed to obtain numerical results to the effective dielectric constant and characteristic impedance.     

Design of near-unity transmittance dielectric/Ag/ITO electrodes for GaN-based light-emitting diodes

We designed a near-unity transmittance dielectric/Ag/ITO electrode for high-efficiency GaN-based light-emitting diodes by using the scattering matrix method. The transmittance of an ultrathin metal layer, sandwiched between a dielectric layer and an ITO layer, was investigated as a function of the thickness and the optical constant of each constituent layer. Three different metals (Ag, Au, and Al) were examined as the metal layer. The analytical simulation indicated that the transmittance of a dielectric/metal/ITO multilayer film is maximized with an approximately 10-nm-thick Ag layer. Additionally, the transmittance also tends to increase as the refractive index of the upper dielectric layer increases. By tailoring the thickness of the dielectric layer and the ITO layer, the dielectric/Ag/ITO structure yielded a transmittance of 0.97, which surpasses the maximum transmittance (0.91) of a single ITO film. Furthermore, this extraordinary transmittance was present for other visible wavelengths of light, including violet and green colors. A complex phasor diagram model confirmed that the transmittance of the dielectric/metal/ITO multilayer film is influenced by the interference of reflected partial waves. These numerical findings underpin a rational design principle for metal-based multilayer films that are utilized as transparent electrodes for the development of efficient light-emitting diodes and solar cell devices.     

Electric fields and surface charge in a thin-film ferroelectric-dielectric switchable structure that were determined with a spectral probe

A new method is proposed to study the macroscopic ac fields in the elements of thin-film ferroelectric-dielectric heterostructures during their electric switching. For this purpose, the local field surrounding dielectric molecules is measured. It is important that the dielectric has a characteristic very narrow molecular absorption band, which is used as an electric-field probe. The heterostructure under study consists of a glass substrate, a transparent electrode, a 170-nm-thick layer of polymer ferroelectric, a 40-nm-thick dielectric layer, and a semitransparent electrode. Both functional layers are grown by the Langmuir-Blodgett method. An ac electric field is applied to the electrodes, and the local field having appeared in the dielectric is measured by the electroabsorption method. With allowance for the Lorentz factor, the local field is easily converted into the macroscopic field in the dielectric layer and, then, in the ferroelectric layer. The classical Sawyer-Tower scheme is used as an additional tool to determine the surface charge to be switched at the dielectric-ferroelectric interface.     

Effects of electrodes on performance figures of thin film bulk acoustic resonators

The effects of mechanical losses and elastic properties of the electrodes on the performance figures of a thin film bulk acoustic resonator (FBAR) are analyzed by numerical simulation. Results indicate that the material loss of the electrode has no visible effect on the characterization of the effective electromechanical coupling factor, k(eff)2. The acoustic impedance ratio of the electrode to the piezo-film dominantly determines the behaviors of the k(eff)2 variation with the electrode thickness. The resonance Q value, Q(s), of the FBAR closely relies on the material Q values of film and of electrodes as expected. Besides, the variation of Q(s) versus the thickness of the electrodes crucially depends on the acoustic impedance ratio as well. Especially, three characteristic parameters, i.e., the maximum value of k(eff)2, the sectional mass ratio of the electrode to the piezo film corresponding to the maximum k(eff)2, and the tolerance range of the ratio to keep k(eff)2 near the maximum, are calculated for some typical samples. These results would be useful for optimizing FBAR designs and performances.     

TE（A）激光器中放电电极的设计与选择

介绍了TE（A）激光器中Rogowski电极和近似Rogowski电极、Chang电极和紧凑式Chang电极、两类Ernst电极和紧凑式Ernst电极的设计方法。给出了上述放电电极的面型和表面电场分布，简述了制造上述电极的注意事项。在同等电场均匀度和均匀电场分布范围的情况下，对比了保角映射型电极的尺寸大小和电场分布特点。综合放电电极的面型、制造难度、辉光放电实验可知，在要求高能量和高功率的场合下，选择Ernst电极较好；在脉冲激光指标要求一般的场合下，选择近似Rogowski电极较好。     

Effect of substrate thickness and metallization thickness on dispersion characteristics of CPW

Approximate conformal mapping techniques have been used for analysing the effect of finite substrate thickness on coplanar wave guide (CPW). Calculations for impedance and effective dielectric constant are presented for CPW's with finite substrate thicknesses. Analytical formulation are presented for calculations. Network analytical methods of electromagnetic fields are employed to evaluate the effect of thick metal coating on CPW. Dispersion characteristics of CPW have been plotted for various metallization thicknesses. Effect of thick metal coating on guide wavelength is also plotted. Increase in metallization thickness of CPW causes an increase in wavelength. Due to this fact characteristic impedance and effective dielectric constant decreases.     

Structure of the near-electrode dissociation-recombination charged layers at various low-voltage conductivities of a low-conducting liquid

The current passage through a low-conducting liquid is simulated for a system of electrodes with a highly nonuniform electric-field distribution at voltages lower and higher than the threshold of appearance of electrohydrodynamic flows. The structure of the near-electrode dissociation-recombination charged layers is considered in terms of the following two-charge formation models: constant dissociation in the volume but without injection and injection from an electrode and constant dissociation in the volume. The change in the polarity of the near-electrode charged layer caused by an increase in the voltage or a change in the low-voltage conductivity of the liquid is analyzed. Two types of electrohydrodynamic flows, which appear in real electrohydrodynamic devices and have opposite directions, are obtained using one mathematical model.     

高次谐波体声波谐振器的有效机电耦合系数

高次谐波体声波谐振器HBAR (High-overtone Bulk Acoustic Resonator)由基底、压电薄膜和上下电极组成,系统地研究了它们的结构参数(厚度)和性能参数(特性阻抗)对HBAR的重要性能参数有效机电耦合系数K_eff2的影响。在谐振频率附近,通过将HBAR的分布参数等效电路简化为集总参数等效电路得到了它们之间的关系表达式,分析了K_eff2在所关心频率最近谐振点的变化情况。结果表明,保持压电薄膜厚度不变,连续增加基底厚度,K_eff2呈振荡(非单调)下降,当基底厚度达到一定值时K_eff2与厚度成反比下降;保持基底厚度不变,连续增加压电薄膜厚度,K_eff2的峰值随基底和压电层的特性阻抗之比增加快速下降,到达极小值后缓慢增加;选择低阻抗的熔融石英作为基底可以获得较大的K_eff2;与Al电极相比,Au电极选择适当厚度可以获得较高的K_eff2。上述揭示的一些规律为HBAR的优化设计提供了理论依据。