Spatial effects of Fano resonance in local tunneling conductivity in vicinity of impurity on semiconductor surface

We present the results of local tunneling conductivity spatial distribution detailed theoretical investigations in vicinity of impurity atom for a wide range of applied bias voltage. We observed Fano resonance in tunneling conductivity resulting from interference between resonant tunneling channel through impurity energy level and direct tunneling channel between the tunneling contact leads. We have found that interference between tunneling channels strongly modifies form of tunneling conductivity measured by the scanning tunneling microscopy/spectroscopy (STM/STS) depending on the distance value from the impurity.     

Understanding of surface states in a correlated electron system

The aim of this work is to find a simple analytic model to explain some principal aspects of the behavior of surface states in correlated electron systems. We start from the analytic expression for the Green function of the semi-infinite tight binding linear chain. This Green function in case of modification of the center of gravity of the first atom and the change in coupling between the first and the second atom is evaluated as an exact analytic expression. Conditions for the existence and classification of surface states are given. The spectral weight of surface states and the local density of states are evaluated. The method is applied to a s.c. (100) surface of a local moment crystal. Conditions for the existence of surface states are derived and their locations in the Brillouin zone are predicted. It is shown that it is possible to include correlation effects within the framework of the discussed model. The comparison with former numerical results is performed. Received 8 March 2000     

硅纳米结构晶体管中与杂质量子点相关的量子输运

在小于10 nm的沟道空间中,杂质数目和杂质波动范围变得十分有限,这对器件性能有很大的影响.局域纳米空间中的电离杂质还能够展现出量子点特性,为电荷输运提供两个分立的杂质能级.利用杂质原子作为量子输运构件的硅纳米结构晶体管有望成为未来量子计算电路的基本组成器件.本文结合安德森定域化理论和Hubbard带模型对单个、分立和耦合杂质原子系统中的量子输运特性进行了综述,系统介绍了提升杂质原子晶体管工作温度的方法.     

Structural,electronic,and magnetic properties of vanadium atom-adsorbed MoSe_2 monolayer

Using the first-principles calculations, we study the structural, electronic, and magnetic properties of vanadium adsorbed MoSe_2 monolayer, and the magnetic couplings between the V adatoms at different adsorption concentrations. The calculations show that the V atom is chemically adsorbed on the MoSe_2 monolayer and prefers the location on the top of an Mo atom surrounded by three nearest-neighbor Se atoms. The interatomic electron transfer from the V to the nearestneighbor Se results in the polarized covalent bond with weak covalency, associated with the hybridizations of V with Se and Mo. The V adatom induces local impurity states in the middle of the band gap of pristine MoSe_2, and the peak of density of states right below the Fermi energy is associated with the V- dz~2 orbital. A single V adatom induces a magnetic moment of 5 μBthat mainly distributes on the V-3d and Mo-4d orbitals. The V adatom is in high-spin state, and its local magnetic moment is associated with the mid-gap impurity states that are mainly from the V-3d orbitals. In addition,the crystal field squashes a part of the V-4s electrons into the V-3d orbitals, which enhances the local magnetic moment.The magnetic ground states at different adsorption concentrations are calculated by generalized gradient approximations(GGA) and GGA+U with enhanced electron localization. In addition, the exchange integrals between the nearest-neighbor V adatoms at different adsorption concentrations are calculated by fitting the first-principle total energies of ferromagnetic(FM) and antiferromagnetic(AFM) states to the Heisenberg model. The calculations with GGA show that there is a transition from ferromagnetic to antiferromagnetic ground state with increasing the distance between the V adatoms. We propose an exchange mechanism based on the on-site exchange on Mo and the hybridization between Mo and V, to explain the strong ferromagnetic coupling at a short distance between the V adatoms. However, the ferromagnetic exchange mechanism is sensitive to both the increased inter-adatom distance at low concentration and the enhanced electron localization by GGA+U, which leads to antiferromagnetic ground state, where the antiferromagnetic superexchange is dominant.     

Multiband tight-binding model of local magnetism in Ga1-xMnxAs

We present the spin and orbitally resolved local density of states (LDOS) for a single Mn impurity and for two nearby Mn impurities in GaAs. The GaAs host is described by a sp(3) tight-binding Hamiltonian, and the Mn impurity is described by a local p-d hybridization and on-site potential. Local spin-polarized resonances within the valence bands significantly enhance the LDOS near the band edge. For two nearby parallel Mn moments the acceptor states hybridize and split in energy. Thus scanning tunneling spectroscopy can directly measure the Mn-Mn interaction as a function of distance.     

Impurities in a biased graphene bilayer

We study the problem of impurities and midgap states in a biased graphene bilayer. We show that the properties of the bound states, such as localization lengths and binding energies, can be controlled externally by an electric field effect. Moreover, the band gap is renormalized and impurity bands are created at finite impurity concentrations. Using the coherent potential approximation, we calculate the electronic density of states and its dependence on the applied bias voltage.     

Local impurity phase pinning and pinning force in charge density waves

Starting from the static Fukuyama-Lee-Rice equation for a three-dimensional incommensurate charge density wave (CDW) in quasi one-dimensional conductors a solvable model for local phase pinning by impurities is defined and studied. We find that average CDW energy and average pinning force show critical behaviour with respect to the pinning parameter h. Specifically the pinning force exhibits a threshold at h=1 with exponent . Our model exemplifies a general concept of local impurity pinning in which the force exerted by the impurity on the periodic CDW structure becomes multivalued and metastable states appear beyond a threshold. It is found that local impurity pinning becomes less effective at low temperatures and may eventually cease completely. These results are independent of spatial dimensionality as expected for local impurity pinning. Comparison with Larkin's model is also made. Received 8 July 1998     

STM tunneling through a quantum wire with a side-attached impurity

The STM tunneling through a quantum wire (QW) with a side-attached impurity (atom, island) is investigated using a tight-binding model and the non-equilibrium Keldysh Green function method. The impurity can be coupled to one or more QW atoms. The presence of the impurity strongly modifies the local density of states of the wire atoms, thus influences the STM tunneling through all the wire atoms. The transport properties of the impurity itself are also investigated mainly as a function of the wire length and the way it is coupled to the wire. It is shown that the properties of the impurity itself and the way it is coupled to the wire strongly influence the STM tunneling, the density of states and differential conductance.     

杂质P对α-Fe中刃型位错上扭折电子结构的影响

利用离散变分方法和DMol方法,研究了P对bcc Fe中［100］(010)刃型位错上扭折电子结构的影响,计算了杂质偏聚能、原子间相互作用能、电荷密度及态密度.计算结果表明：微量P引入体系后,电荷发生了重新分布,P原子得到电子,其周围Fe原子失去电子,由于P原子的3p轨道与近邻Fe原子的3d4s4p轨道之间杂化,使P原子与近邻Fe原子间有较强的相互作用,不利于扭折的迁移,使位错运动受阻,有利于材料强度的提高.同时,杂质P原子与基体原子间的成键主要是d,p轨道起作用,使得它们之间的成键有较强的方向性,有可能 关键词： 电子结构 刃型位错 扭折 杂质元素     

Final state effects of deep impurities in semiconductors

Current theoretical and computational models for optical excitation processes of deep level impurities in semiconductors tend to concentrate on the impurity itself, largely ignoring the effects the impurity has no final states. Using a spherical band model, we show these effects can be included in calculations on optical absorption processes. The band state is modified by the presence of the impurity and this modified state is used in the calculation of optical matrix elements. We show that final state effects can cause significant changes in the local density of states and optical matrix elements.     

Local vibrations in fcc crystals with two-parametric substitutional impurities

The threshold parameters of defects (the mass defect and the relative change in the force constants) are determined at which local vibrations start to occur in an fcc crystal with substitutional impurities. The characteristics of local vibrations are investigated, and the influence of the defect parameters on the frequency of local vibrations and their decay rate with distance from the impurity atom is analyzed. The frequencies and the intensities of local vibrations are calculated for the nearest neighboring atoms of an impurity, which, combined with the impurity atom, form a defect cluster.     

Interplay between edge states and simple bulk defects in graphene nanoribbons

We study the interplay between the edge states and a single impurity in a zigzag graphene nanoribbon. We use tight-binding exact diagonalization techniques, as well as density functional theory calculations to obtain the eigenvalue spectrum, the eigenfunctions, as well as the dependence of the local density of states (LDOS) on energy and position. We study the strictly zero-energy eigenfunctions using symmetry considerations, as well as tight-binding techniques. Moreover, we note that roughly half of the unperturbed eigenstates in the spectrum of the finite-size ribbon hybridize with the impurity state, and the corresponding eigenvalues are shifted with respect to their unperturbed values. The maximum shift and hybridization occur for a state whose energy is inverse proportional to the impurity potential, and give rise to an impurity peak in the DOS spectrum. We find that the interference between the impurity and the edge gives rise to peculiar modifications of the LDOS of the nanoribbon, in particular to oscillations of the edge LDOS. These effects depend on the size of the system, and decay with the distance between the edge and the impurity.     

Vacuum polarization and screening of supercritical impurities in graphene

Screening of charge impurities in graphene is analyzed using the exact solution for vacuum polarization obtained from the massless Dirac-Kepler problem. For the impurity charge below a certain critical value, no density perturbation is found away from the impurity, in agreement with perturbation theory. For the supercritical charge, however, the polarization distribution is shown to have a power law profile, leading to screening of the excess charge at large distances. The Dirac-Kepler scattering states give rise to standing wave oscillations in the local density of states which are prominent in the supercritical regime.     

Local moment formation in the superconducting state of a doped Mott insulator

A microscopic theory is presented for the local moment formation near a nonmagnetic impurity or a copper defect in high-Tc superconductors. We use a renormalized mean-field theory of the t-J model for a doped Mott insulator and study the fully self-consistent, spatially unrestricted solutions of the d-wave superconducting (SC) state in both the spin S=0 and S=1/2 sectors. We find a transition from the singlet d-wave SC state to a spin doublet SC state when the renormalized exchange coupling exceeds a doping dependent critical value. The induced S=1/2 moment is staggered and localized around the impurity. It arises from the binding of an S=1/2 nodal quasiparticle to the impurity. The local density of states is calculated and connections to NMR and STM experiments are discussed.     

The exchange interaction effect in the scanning tunneling spectroscopy of a two-orbital Anderson impurity on metallic surface

We investigate the scanning tunneling spectroscopy (STS) of a two-orbital Anderson impurity adsorbed on a metallic surface by using the numerical renormalization group (NRG) method. The density of state of magnetic impurity and the local conduction electron are calculated. We obtain the Fano resonance line shape in the STM conductance at zero temperature. For the impurity atom with antiferromagnetic inter-orbital exchange interaction and a spin singlet ground state, we show that a dip in the STM spectra around zero bias voltage regime and side peaks of spin excitation can be observed. The spin excitation energy is proportional to the exchange interaction strength. As the exchange interaction is ferromagnetic, the underscreened Kondo effect dominates the low energy properties of this system, and it gives rise to drastically different STM spectra as compared with the spin singlet case.     

Theory of quasimagnetic impurity in a metal: An exactly soluble model of interacting electrons

We study an impurity atom, on which two-body forces are important, dissolved in a metal, where they are negligible. With the aid of the well-known boson excitation spectrum of the electronic Fermi sea, we predict the low-energy effects of one- and two-body potentials on the impurity, in the nonmagnetic regime. We obtain for the first time exact expressions for the cutoff independent contributions to the specific heat and paramagnetic susceptibility, the spectral amplitudes or one-electron density of states on the impurity, and the scattering cross-section. The entire spectrum of manybody eigenstates is explicitly obtained. The onset of a local magnetic moment appears as a sudden breakdown of the model Hamiltonian, and occurs when the two-body potential exceeds a critical value U_c which is O(E_F) in magnitude. A study of the renormalization of the interaction parameters terminates the paper.     

一维单原子链中杂质引起的局域振动模

讨论了一维单原子链中杂质引起的晶格局域振动模和局域振动图像,分析了杂质质量和杂质近邻力常数对振动模的影响,通过数值求解晶格振动运动方程组．给出了局域振动模关于杂质质量和杂质近邻力常数分布的相图;分析了含杂质晶格振动模频率相对于完整晶格振动模频率的变化。     

Electronic structure of disordered graphene with Greenʼs function approach

The Green functions play a big role in the calculation of the local density of states of the carbon nanostructures. We investigate their nature for the variously oriented and disclinated graphene-like surface. Next, we investigate the case of a small perturbation generated by two heptagonal defects and from the character of the local density of states in the border sites of these defects we derive their minimal and maximal distances on the perturbed cylindrical surface. For this purpose, we transform the given surface into a chain using the Haydock recursion method. We will suppose only the nearest-neighbor interactions between the atom orbitals, in other words, the calculations suppose the short-range potential.     

Quasiparticle states and quantum interference induced by magnetic impurities on a two-dimensional topological superconductor

We theoretically study the effect of localized magnetic impurities on two-dimensional topological superconductor (TSC). We show that the local density of states (LDOS) can be tuned by the effective exchange field m, the chemical potential μ of TSC, and the distance Δr as well as the relative spin angle α between two impurities. The changes in Δr between two impurities alter the interference and result in significant modifications to the bonding and antibonding states. Furthermore, the bound-state spin LDOS induced by single and double magnetic impurity scattering, the quantum corrals and the quantum mirages are also discussed. Finally, we briefly compare the impurities in TSC with those in topological insulators.     

Ab initio calculation of local vibrational modes by the Green’s function method. Application to GaAs:C and GaN:As

We present an ab initio technique for the calculation of vibrational modes at deep defects in semiconductors outside and inside the host-phonon bands. The dynamical matrix is calculated using density-functional theory in the local density approximation. In the results presented here all interatomic harmonic forces up to the eleventh nearest neighbour of a particular atom of the perturbed or unperturbed crystal are included. The Green's function method is used to obtain the difference of the density of phonon states between the perturbed and the perfect crystal. This technique is applied to calculate the split-off mode at the C impurity at As site in GaAs and its isotope shifts, which are in good agreement with Raman scattering experiments. It is demonstrated that the impurities generate resonances and localized modes inside the host-phonon bands. The resonances arise at specific energies of the density of phonon states of the perfect crystal which are practically independent of the chemical nature of the defect, whereas the localized modes show distinct impurity or ligand isotope shifts. Our calculations of GaAs and cubic GaN lead to the assignment of a number of low energy Raman-scattering peaks between 7.2 meV and 31.0 meV, observed at a layer of cubic GaN on a GaAs substrate, to resonances inside the phonon bands of GaAs and GaN. Received 5 March 1999