Spatial effects of Fano resonance in local tunneling conductivity in vicinity of impurity on semiconductor surface

We present the results of local tunneling conductivity spatial distribution detailed theoretical investigations in vicinity of impurity atom for a wide range of applied bias voltage. We observed Fano resonance in tunneling conductivity resulting from interference between resonant tunneling channel through impurity energy level and direct tunneling channel between the tunneling contact leads. We have found that interference between tunneling channels strongly modifies form of tunneling conductivity measured by the scanning tunneling microscopy/spectroscopy (STM/STS) depending on the distance value from the impurity.     

局域态密度对表面等离激元特性影响的研究

表面等离激元是一种在金属与介质界面上激发并耦合电荷密度起伏的电磁振荡, 具有近场增强和短波长等特性, 在纳米光子学的研究中扮演重要角色. 将表面等离激元的效应用于单光子源的制备, 不但可以有效减小器件的体积, 而且可以有效提高单光子的辐射和收集效率. 本文根据表面等离激元的珀赛尔系数与光子态密度的关系, 采用局域态密度计算的方法, 分析了不同金属材料的局域态密度及珀赛尔系数的特性. 通过计算比较, 选择银为最佳金属材料, 并在此基础上讨论了探测距离和电介质材料对局域态密度和珀赛尔系数的影响, 为基于表面等离子激元的单光子源制备提供重要参数.     

Phonon-polariton density of states in semiconductor superlattices

An interesting property of modulated semiconductor materials is that their reflectance and absorption spectra can nearly be chosen at will by adjusting the layer geometry. Introducing the concept of phonon-polariton density of states, this paper is aimed at investigating spectral properties of multilayered materials in the infra-red frequency range. Using powerful analytical methods, we will successively consider the cases of infinite and semi-infinite superlattices. The local density of states of polariton modes is obtained using a Green's function technique. Complete information is then available on allowed radiative and non-radiative electromagnetic excitations, (as a function of frequency and wavelength), at any depth in the stratified material. This approach will depict the essential role played by the surface, which changes significantly the polariton density of states as compared to ideal unbounded materials. In multilayered materials, in addition to the effect induced by the surface, one can similarly investigate the influence of the internal interfaces on the polariton local density of states and, from these, on the optical properties of those systems. Electromagnetic eigenmodes arising from the accumulation of interfaces are crucial to assess the spectral properties involving TM-polarized radiations. Effects related to the TE-polarized radiations are explained from the macroscopic anisotropy due to the alternate growth of different semiconductors. These results will be used to discuss reflectance experiments and simulated ATR spectra.     

Pair effects in the impurity band density of states

Results of a simple two center approximation for impurity bands are presented. For low concentrations the density of states deviates strongly from the single site CPA and agrees well with numerical “exact” results.     

Effect of spin-orbit interaction on a magnetic impurity in the vicinity of a surface

We propose a new mechanism for surface-induced magnetic anisotropy to explain the thickness dependence of the Kondo resistivity of thin films of dilute magnetic alloys. The surface anisotropy energy, generated by spin-orbit coupling on the magnetic impurity itself, is an oscillating function of the distance d from the surface and decays as 1/d2. Numerical estimates based on simple models suggest that this mechanism, unlike its alternatives, gives rise to an effect of the desired order of magnitude.     

The Schottky barrier at homogeneous impurity distribution in a semiconductor

The properties of the metal-semiconductor rectifying junction during the formation of a homogeneous diffuse distribution of electroactive defects in space-charge layers are discussed. The typical values of the effective Schottky barrier and its height fluctuations have been found in the absence of external field in the case of the low-temperature (∼500–700 K) redistribution of a shallow impurity. The Schottky barrier lowering in the junction and the typical inhomogeneity of the barrier height are of the order of the contact potential difference.     

Local density of states in a model variable-band semiconductor

A model of a variable-band semiconductor which permits of an accurate solution is considered. The wave functions and an equation defining the energy spectrum of the system are obtained. The local density of states, which, generally speaking, is an oscillating function depending on the energy and number of lattice points is calculated. An accurate representation is introduced of the coordinate dependence of the region of the maximum of the local density of states, which is a generalization of the approximate representation of the curvature of the energy bands. In the case of a fairly smooth variation in the potential parameter of the variable-band system a comparison is made with the approximate band-structure pattern.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 50–55, June, 1981.     

Fluctuations of the local density of states probe localized surface plasmons on disordered metal films

We measure the statistical distribution of the local density of optical states (LDOS) on disordered semicontinuous metal films. We show that LDOS fluctuations exhibit a maximum in a regime where fractal clusters dominate the film surface. These large fluctuations are a signature of surface-plasmon localization on the nanometer scale.     

Spatial imaging of two-dimensional electronic states in semiconductor quantum wells

We measure the spatial distribution of the local density of states (LDOS) at cleaved surfaces of InAs/GaSb isolated quantum wells and double quantum wells (DQWs) by low-temperature scanning tunneling spectroscopy. Distinct standing wave patterns of LDOS corresponding to subbands are observed. These LDOS patterns and subband energies agree remarkably well with simple calculations with tip-induced band bending. Furthermore, for the DQWs, coupling of electronic states between the quantum wells is also clearly observed.     

Scanning tunneling microscopy of the nonequilibrium interaction of impurity states at semiconductor surfaces

Interaction of two localized impurity states of Si atoms at a GaAs surface was studied by scanning tunneling microscopy and spectroscopy. The effects of a twofold “switching” on and off of the states of each of the interacting atoms, the tunneling-interaction-induced mutual level pulling of these states, and the level stabilization near E _F were observed. These effects are explained in terms of the extended Anderson model.     

Nonlocal fluid density distribution in the vicinity of the critical point

The differential equation for the component local density of a binary fluid was obtained as a result of an isoperimetric problem of the system free energy minimization under condition of particle number stability. The obtained expression can be used in the calculation of liquid's profiles as well as in the investigation of thermodynamic properties in the vicinity of the critical point. An isoperimetric problem solution for the model binary fluid of the system free energy minimization under condition of particle number stability was obtained in different cases: fluid within flat parallel layer under a gravitational field, under a gravitational field and wall potential as well as under a wall potential for another equation of state.     

A study of local density of states of atom clusters on the W(110) surface

The kinetic energy distributions of field desorbed He ions from tungsten clusters of one to five atoms on a W(110) surface are measured using a high resolution pulsed-laser time-of-flight atom probe. The He field ion energy distribution from the single W adatom shows an extra peak-like feature centered at 2.7 eV above the Fermi level. It has a full width at half maximum (fwhm) of 2.3 eV. The data from two tungsten adatoms separated by two lattice constants have nearly the same feature with the extra peak located at 2.5 eV above the Fermi level. These peaks arise from resonance tunneling with the adatom local density of states (LDOS). The He ion energy distribution of a tungsten dimer has an extra peak centered at 1.5 eV above the Fermi level. The fwhm is about 4 eV. The spectra from four and five tungsten adatom clusters show only one peak each, similar to that from a flat plane.     

IR detection by depletion of trapped charge in localized impurity states of an extrinsic semiconductor

Recently we have described a new mode of IR detection which utilizes charge storage in localized levels of an extrinsic semiconductor at low temperatures. This method is based on field-assisted impurity photoionization. IR photoionization depletes the population of stored charge in localized impurity states. The integration takes place inside the bulk of the semiconductor. A large negative going pulse causes rapid field ionization of the remaining charge after an IR exposure. Readout is accomplished by measuring this ejected charge. Using a cryogenically cooled monochromator, we have studied the spectral response and its field dependence. Extremely low dark currents (<3×10^–18 A) permit IR integration times of up to 12 hours or more. For the first time, significant photoresponse is obtained from a cryogenic Si:P detector at wavelengths up to 43 m, well beyond the nominal long wavelength cutoff of 27 m.This work was supported in part by National Science Foundation grant #ECS-8202473.     

Laser-induced reshaping of the density of impurity states in GaAs/AlGaAs nanowires

The binding energy of shallow-donor impurities in a cylindrical quantum well wire irradiated by an intense non-resonant laser field is calculated within the effective mass approximation by using a variational procedure. Accurate laser-dressing effects are considered for both the confinement potential of the wire and the Coulomb potential of the impurity. The computation of the ground state subband energy eigenfunctions for different laser field intensities is based on a bidimensional finite element method. Important changes of the electron probability density under intense laser field conditions are predicted. The study reveals that the laser field compete with the quantum confinement and breaks down the degeneracy of states for donors symmetrically positioned within the nanostructure. A proper analysis of the density of impurity states is found to be essential for controlling the optical emission related to shallow donors in semiconductor quantum wires.