Calibration of RPC-based muon detector at BESⅢ

The calibration algorithm for RPC-based muon detector at BESIII has been developed. The calibration method, calibration error and algorithm performance are studied. The primary results of efficiency and noise at layer, module and strip levels have been calibrated with cosmic ray data. The calibration constants are available for simulation and reconstruction tuning. The results of Monte Carlo and data are also compared to check the validation and reliability of the algorithm.     

Precipitation efficiency and its relationship to physical factors

The precipitation efficiency and its relationship to physical factors are examined by analyzing a two-dimensional cloud-resolving model simulation during TOGA COARE in this study. The basic physical factors include convective avail- able potential energy, water-vapor convergence, vertical wind shear, cloud ratio, sea surface temperature, air temperature, and precipitable water. Precipitation efficiencies do not show a close relationship to air temperature nor to sea surface tem- perature nor to precipitable water. The precipitation efficiency increases as the water-vapor convergence rate increases and vertical wind shear weakens, whereas it decreases as the convective available potential energy dissipates and anvil clouds develop.     

积分中值定理在放射性氙样品γ谱效率刻度技术中的应用

在实验室HPGe探测器测量分析氙气样品过程中需要用到相对方法进行分析, 然而由于放射性氙同位素半衰期较短, 制作相应的标准气体比较难, 给谱仪系统刻度带来困难.针对该问题, 提出使用混合面源模拟刻度四种氙同位素气体源的效率, 并提出将积分中值定理应用到面源刻度实验过程, 大大简化了中间流程, 提高了测量的准确性.利用氙分离纯化系统在高氡环境下采集样品, 获得了天然放射性¹³³Xe气体γ谱, 通过计算得到其活度浓度. 积分中值位置处的混合面源刻度结果和气体源刻度结果一致, 说明本文提出的面源刻度技术及积分中值定理的思想在HPGe 探测器效率刻度测量分析中是有效可行的. 关键词： 面源 无源效率刻度软件 效率刻度     

Measurement of the response function and the detection effciency of an organic liquid scintillator for neutrons between 1 and 30 MeV

The light output function of a φ50.8 mm×50.8 mm BC501A scintillation detector was measured in the neutron energy region of 1 to 30 MeV by fitting the pulse height （PH） spectra for neutrons with the simulations from the NRESP code at the edge range. Using the new light output function, the neutron detection effciency was determined with two Monte-Carlo codes, NEFF and SCINFUL. The calculated effciency was corrected by comparing the simulated PH spectra with the measured ones. The determined effciency was verified at the near threshold region and normalized with a Proton-Recoil-Telescope （PRT） at the 8-14 MeV energy region.     

Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AIInGaN superlattice electron blocking layer

InGaN/AIlnGaN superlattice （SL） is designed as the electron blocking layer （EBL） of an InGaN/GaN-based light- emitting diode （LED）. The energy band structure, polarization field at the last-GaN-barrier/EBL interface, carrier concen- tration, radiative recombination rate, electron leakage, internal quantum efficiency （IQE）, current-voltage （l-V） perfor- mance curve, light output-current （L-l） characteristic, and spontaneous emission spectrum are systematically numerically investigated using APSYS simulation software. It is found that the fabricated LED with InGaN/AIInGaN SL EBL exhibits higher light output power, low forward voltage, and low current leakage compared with those of its counterparts. Meanwhile, the efficiency droop can be effectively mitigated. These improvements are mainly attributed to the higher hole injection efficiency and better electron confinement when InGaN/AIlnGaN SL EBL is used.     

A GaN-AIGaN-InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED

The advantages of a GaN-AlGaN-InGaN last quantum barrier （LQB） in an InGaN-based blue light-emitting diode are analyzed via numerical simulation. We found an improved light output power, lower current leakage, higher recombi- nation rate, and less efficiency droop compared with conventional GaN LQBs. These improvements in the electrical and optical characteristics are attributed mainly to the specially designed GaN-AlGaN-InGaN LQB, which enhances electron confinement and improves hole injection efficiency.     

Efficiency enhancement of an InGaN light-emitting diode with a p-AIGaN/GaN superlattice last quantum barrier

In this study, the efficiency droop of an InGaN light-emitting diode （LED） is reduced slgnlncanUy oy using a p-AlGaN/GaN superlattice last quantum barrier. The reduction in efficiency droop is mainly caused by the decrease of electron current leakage and the increase of hole injection efficiency, which is revealed by investigating the light currents, internal quantum efficiencies, energy band diagrams, carrier concentrations, carrier current densities, and radiative recombination efficiencies of three LED structures with the advanced physical model of semiconductor device （APSYS）.     

Design of a high-efficiency C-band backward wave oscillator

For practicability of the high power microwave source,a C-band backward wave oscillator（BWO） which has high conversion efficiency is designed.When the axial guiding magnetic field is 0.83 T,the electron energy and the beam current of the diode are respectively 80 keV and 2.1 kA,a microwave output power of 100 MW at 7.4 GHz microwave frequency with 65% conversion efficiency is achieved in simulation.     

Trigger efficiencies at BESⅢ

Trigger efficiencies at BESⅢ were determined for both the J/ψ and ψ＇ data taking of 2009. Both dedicated runs and physics datasets are used; efficiencies are presented for Bhabha-scattering events, generic hadronic decay events involving charged tracks, dimuon events and ψ＇→π＋π-J/ψ, J/ψ→ 1＋1- events.The efficiencies are found to lie well above 99% for all relevant physics cases, thus fulfilling the BESⅢ design specifications.     

Performance enhancement of an InGaN light-emitting diode with an AIGaN/InGaN superlattice electron-blocking layer

The efficiency enhancement of an InGaN light-emitting diode （LED） with an A1GaN/InGaN superlattice （SL） electron-blocking layer （EBL） is studied numerically, which involves the light-current performance curve, internal quan- tum efficiency electrostatic field band wavefunction, energy band diagram carrier concentration, electron current density, and radiative recombination rate. The simulation results indicate that the LED with an A1GaN/InGaN SL EBL has better optical performance than the LED with a conventional rectangular A1GaN EBL or a normal A1GaN/GaN SL EBL because of the appropriately modified energy band diagram, which is favorable ibr the injection of holes and confinement of elec- trons. Additionally, the efficiency droop of the LED with an AIGaN/InGaN SL EBL is markedly improved by reducing the polarization field in the active region.     

Mechanism of Bragg Diffraction-Assisted Light Extraction in GaN-based Light-Emitting Diodes Based on a Self-Consistent Model

By introducing the distribution of the light energy density in GaN-based light-emitting diode （LED）, the LED model based on the incoherent regime and the light extraction efficiency are investigated. The energy density as a function of the angle of incidence is calculated to demonstrate the mechanism of the light extraction. The deviation between the tendencies of the transmissivity of the output layer and the extraction efficiency is also demonstrated.     

Improved light extraction of organic light emitting diodes with a nanopillar pattering structure

We have investigated the properties of organic light emitting diodes(OLEDs)with a nanopillar patterning structure at organic–metal or organic–organic interfaces.The results demonstrate that the introduction of a nanopillar structure can improve the light extraction efficiency greatly.We also find that the number,height,and position of nanopillars all affect the light extraction of OLEDs.The maximum power efficiency of a device with an optimized nanopillar patterning mode can be improved to 2.47 times that of the reference device.This enhancement in light extraction originates from the improved injected carriers,the broadened charge recombination zone,and the intensified wave guiding effects.     

High-efficiency S-band harmonic tuning GaN amplifier

In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2rid harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm （70 W） with a power-added efficiency （PAE） of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz （20% relative bandwidth）, the amplifier provides an output power higher than 48 dBm （,-~ 65 W）, with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave （CW） operating conditions, the amplifier gives an output power over 46 dBm （40 W） with PAE beyond 60% over the whole operation frequency range.     

An approach to evaluate the efficiency of γ-ray detectors to determine the radioactivity in environmental samples

This work provides an approach to determine the efficiency of γ-ray detectors with a good accuracy in order to determine the concentrations of either naturally occurring or artificially prepared radionuclides. This approach is based on the efficiency transfer formula (ET), the effective solid angles, the self- absorptions of the source matrix, the attenuation by the source container and the detector housing materials on the detector efficiency. The experimental calibration process was done using radioactive (Cylindrical & Marinelli) sources, in different dimensions, that contain aqueous ¹⁵²Eu radionuclide. The comparison point to a fine agreement between the experimental measured and calculated efficiencies for the (NaI & HPGe) detectors using volumetric radioactive sources.     

Software alignment of the BESⅢ main drift chamber using the Kalman Filter method

Software alignment is quite important for a tracking detector to reach its ultimate position accuracy and momentum resolution. We developed a new alignment algorithm for the BESⅢ Main Drift Chamber using the Kalman Filter method. Two different types of data which are helix tracks and straight tracks are used to test this algorithm, and the results show that the design and implementation is successful.     

Employing a Cerenkov detector for the thickness measurement of X-rays in a scattering background

The variation in environmental scattering background is a major source of systematic errors in X- ray inspection and measurement systems. As the energy of these photons consisting of environmental scattering background is much lower generally, the Cerenkov detectors having the detection threshold are likely insensitive to them and able to exclude their influence. A thickness measurement experiment is designed to verify the idea by employing a Cerenkov detector and an ionizing chamber for comparison. Furthermore, it is also found that the application of the Cerenkov detectors is helpful to exclude another systematic error from the variation of low energy components in the spectrum incident on the detector volume.     

Hadronic light-by-light scattering contribution to the muon g－2

We review recent developments concerning the hadronic light-by-light scattering contribution to the anomalous magnetic moment of the muon. We first discuss why fully off-shell hadronic form factors should be used for the evaluation of this contribution to the g- 2. We then reevaluate the numerically dominant pion-exchange contribution in the framework of large-No QCD, using an off-shell pion-photon-photon form factor which fulfills all QCD short-distance constraints, in particular, a new short-distance constraint on the off-shell form factor at the external vertex in g- 2, which relates the form factor to the quark condensate magnetic susceptibility in QCD. Combined with available evaluations of the other contributions to hadronic light-by-light scattering this leads to the new result αμ^LbyL;had= （116±40） × 10^-11, with a conservative error estimate in view of the many still unsolved problems. Some potential ways for further improvements are briefly discussed as well. For the electron we obtain the new estimate αe^LbyL;had= （3.9± 1.3） × 10^-14.     

J/ψ→μ^＋μ^- reconstruction in the CMS experiment

In this paper the J/ψ→μ^＋μ^- reconstruction performance in the CMS experiment at the LHC is studied in detail by using B8→J/ψφ→μμKK events. The reconstruction efficiencies of J/ψ mesons and their decay muons are obtained as a function of the transverse momentum PT and the pseudo-rapidity η. We also study the muon trigger efficiency for this channel with the planned Level-1 trigger and High Level Trigger selection criteria. It was observed that the muon reconstruction efficiency decreases when the two decay muons have a small or large 3D angular separation, which further affects the overall J/ψ reconstruction efficiency.     

Simulation and analysis of 13N+p elastic resonance scattering

The ^13 N＋p elastic resonance scattering has been studied at the secondary radioactive beam facility of CIAE in inverse kinematics via a thick-target method. The excitation function for the ^13N（p,p） scattering was obtained in the energy interval of Ecru ≈0.5-3.2 MeV with a ^13 N secondary beam of （47.8±1.5） MeV. Careful analysis of the secondary beam components and extensive Monte-Carlo simulations enable the resolution of the experimental proton spectra. The resonance parameters for five low-lying levels in ^14 O were deduced by Rmatrix fitting calculations with MULTI7 and SAMMY-M6-BETA. The present results show general agreement with those from a recent similar work, and thus confirm the observation of a new 0^- level at 5.7 MeV in 140 with an improved width of 400（45） keV.     

A pilot experiment for mass measurement at CSRe

A pilot experiment of mass measurement was performed at CSRe with the method of isochronous mass spectrometry. The secondary fragments produced via RIBLL2 with the primary beam of 400 MeV/u ^36Ar delivered by CSRm were injected into CSRe. The revolution periods of the stored ions,which depend on the mass-to-charge ratios of the stored ions,were measured with a time-of-flight detector system. The results show that the mass resolution around 8×10^-6 for △m/m is achieved.