Effects of graphene defects on Co cluster nucleation and intercalation

Four kinds of defects are observed in graphene grown on Ru(0001) surfaces. After cobalt deposition at room temperature, the cobalt nanoclusters are preferentially located at the defect position. By annealing at 530℃, cobalt atoms intercalate at the interface of Graphene/Ru(0001) through the defects. Further deposition and annealing increase the sizes of intercalated Co islands. This provides a method of controlling the arrangement of cobalt nanoclusters and also the density and the sizes of intercalated cobalt islands, which would find potential applications in catalysis industries, magnetism storage, and magnetism control in future information technology.     

High quality sub-monolayer,monolayer, and bilayer graphene on Ru（0001）

High quality sub-monolayer, monolayer, and bilayer graphene were grown on Ru(0001). For the sub-monolayer graphene, the size of graphene islands with zigzag edges can be controlled by the dose of ethylene exposure. By increasing the dose of ethylene to 100 Langmuir at a high substrate temperature(800℃), high quality single-crystalline monolayer graphene was synthesized on Ru(0001). High quality bilayer graphene was formed by further increasing the dose of ethylene while reducing the cooling rate to 5℃/min. Raman spectroscopy revealed the vibrational states of graphene, G and 2D peaks appeared only in the bilayer graphene, which demonstrates that it behaves as the intrinsic graphene. Our present work affords methods to produce high quality sub-monolayer, monolayer, and bilayer graphene, both for basic research and applications.     

First-principles study of the effects of selected interstitial atoms on the generalized stacking fault energies,strength, and ductility of Ni

We analyze the influences of interstitial atoms on the generalized stacking fault energy （GSFE）, strength, and ductility of Ni by first-principles calculations. Surface energies and GSFE curves are calculated for the （112） （111） and / 101） （ 1 1 1） systems. Because of the anisotropy of the single crystal, the addition of interstitials tends to promote the strength of Ni by slipping along the （10T） direction while facilitating plastic deformation by slipping along the （115） direction. There is a different impact on the mechanical behavior of Ni when the interstitials are located in the slip plane. The evaluation of the Rice criterion reveals that the addition of the interstitials H and O increases the brittleness in Ni and promotes the probability of cleavage fracture, while the addition of S and N tends to increase the ductility. Besides, P, H, and S have a negligible effect on the deformation tendency in Ni, while the tendency of partial dislocation is more prominent with the addition of N and O. The addition of interstitial atoms tends to increase the high-energy barrier γmax, thereby the second partial resulting from the dislocation tends to reside and move on to the next layer.     

Invariant expression for tunneling rate under canonical transformations

The original formula to calculate the tunneling rate through event horizons is apparently dependent on the type of coordinates used.In this paper,we propose an invariant expression under canonical transformations to study the tunneling effect.Moreover,the problem of factor 2 is solved naturally.As an application of this expression,we obtain the same tunneling rate both in the Schwarzschild and the Painleve′coordinates.It is shown that once the suitable formula to calculate tunneling rate is correctly identified,the tunneling method is manifestly covariant.     

Stacking stability of MoS_2 bilayer: An ab initio study

The study of the stacking stability of bilayer MoS2 is essential since a bilayer has exhibited advantages over single layer MoS2 in many aspects for nanoelectronic applications. We explored the relative stability, optimal sliding path between different stacking orders of bilayer MoS2, and （especially） the effect of inter-layer stress, by combining first-principles density functional total energy calculations and the climbing-image nudge-elastic-band （CI-NEB） method. Among five typical stacking orders, which can be categorized into two kinds （I： AA＇, AB and II： AA＇, AB＇, A＇B）, we found that stacking orders with Mo and S superposing from both layers, such as AA＇ and AB, is more stable than the others. With smaller computational efforts than potential energy profile searching, we can study the effect of inter-layer stress on the stacking stability. Under isobaric condition, the sliding barrier increases by a few eV/（uc.GPa） from AA＇ to ABt, compared to 0.1 eV/（uc.GPa） from AB to [AB]. Moreover, we found that interlayer compressive stress can help enhance the transport properties of AA＇. This study can help understand why inter-layer stress by dielectric gating materials can be an effective means to improving MoS2 on nanoelectronic applications.     

The etching of a-plane GaN epilayers grown metal-organic chemical vapour deposition

Morphology of nonpolar （1120） a-plane GaN epilayers on r-plane （1102） sapphire substrate grown by low-pressure metal-organic vapour deposition was investigated after KOH solution etching. Many micron- and nano-meter columns on the a-plane GaN surface were observed by scanning electron microscopy. An etching mechanism model is proposed to interpret the origin of the peculiar etching morphology. The basal stacking fault in the a-plane GaN plays a very important role in the etching process.     

Electronic phase diagram of NaFelxCoxAs investigated by scanning tunneling microscopy

Our recent scanning tunneling microscopy （STM） studies of the NaFelxCoxAs phase diagram over a wide range of dopings and temperatures are reviewed. Similar to the high-Tc cuprates, the iron-based superconductors lie in close proximity to a magnetically ordered phase. Therefore, it is widely believed that magnetic interactions or fluctuations play an important role in triggering their Cooper pairings. Among the key issues regarding the electronic phase diagram are the properties of the parent spin density wave （SDW） phase and the superconducting （SC） phase, as well as the interplay between them. The NaFe l-xCoxAs is an ideal system for resolving these issues due to its rich electronic phases and the charge-neutral cleaved surface. In our recent work, we directly observed the SDW gap in the parent state, and it exhibits unconventional features that are incompatible with the simple Fermi surface nesting picture. The optimally doped sample has a single SC gap, but in the underdoped regime we directly viewed the microscopic coexistence of the SDW and SC orders, which compete with each other. In the overdoped regime we observed a novel pseudogap-like feature that coexists with supercon- ductivity in the ground state, persists well into the normal state, and shows great spatial variations. The rich electronic structures across the phase diagram of NaFel_xCoxAs revealed here shed important new light for defining microscopic models of the iron-based superconductors. In particular, we argue that both the itinerant electrons and local moments should be considered on an equal footing in a realistic model.     

Correction to Hawking Tunneling Radiation from Global Monopole Charged Black Hole

Considering the self-gravitation and energy conservation as well as charge conservation, we extend Medved and Vagenas＇s quantum tunneling method to the global monopole charged black hole, and give a correction to Hawking radiation of a charged particle.     

Tunneling of Bose-Einstein condensate and interference effect in a harmonic trap with a Gaussian energy barrier

The tunneling effect of Bose-Einstein condensate (BEC) in a harmonic trap with a Gaussian energy barrier is studied in this paper. The initial condensate evolves into two separate moving condensates after the tunneling time under certain conditions. The interference pattern between the two moving condensates is given as a comparison and as a further demonstration of the existence of the global phase.     

Transmission and Dwell Time Oscillations Caused by Coexistence of Tunneling and Propagating in a Trapezoidal Barrier

Abstract A refined one of our exactly solvable trapezoidal barrier potential model [Thin Solids Films, 414 （2002） 136）] for metal-insulator-metal tunnel junctions has Seen presented. According to the refined model, the longitudinal kinetic energy （ExL） and the effective mass （m^＊L） of the electron8 in the electrode on the left of the barrier distinguish from that on the right. It is found that as ExL is greater than the shorter side of the resultant trapezoidal barrier potential, there will be a coexistence of the tunneling and propagating in the barrier. The results demonstrate that the damped oscillating electron waves localized in the propagating barrier subregion lead to the oscillation and enhancement in the transmission coefficient DT and dwell time TD. For the barrier height φ1=2.6 eV and φ2 = 1.4 eV, the width d=22 A and ExL = 1.0 eV, DT and TD have a maximum of 0.054 and 0.58x10^-15 s at V = 2.04 V and 2.18 V, respectively. This suggests that a real tunneling may be a hybrid.     

Tunneling Conductance in dx2-y2 ＋idly Mixed Wave Superconductor Graphene Junctions

Using the extended Blonder-Tinkham-Klapwijk formalism, we investigate the conductance spectra of normal metal/dx2-y2 ＋ idxy mixed wave superconductor graphene junctions. It is found that the conductance spectra vary strongly with the orientation of the gap and the amplitude ratio （Δ1/Δ0） of two components for dx2-y2 ＋ idxy mixed wave. The zero bias conductance is nearly 2 and the conductance peak vanishes in doped graphene for a = 0 and Δ1/Δ0 = 1. The conductance increases with increasing the amplitude ratio of two components for α =π/4 and Δ1/Δ0 -- 1. The ZBCP becomes observable wide with 1 〈 EF/Δ0 〈 100 for α= π/4 and Δ1/Δ0 = 1. This property is different from that in normal metal/dx2-y2 wave superconductor graphene junctions.     

Adiabatic tunneling of Bose–Einstein condensates with modulated atom interaction in a double-well potential

We study the adiabatic tunneling of Bose–Einstein condensates in a symmetric double-well potential when the interaction strength between the atoms is modulated linearly or in a cosine periodic form. It is shown that the system evolves along a nonlinear eigenstate path. In the case of linear modulation under the adiabatic approximation conditions, the tunneling probability of the condensate atoms to the other potential well is half. However, when the system is periodically scanned in the adiabatic process, we find an interesting phenomenon. A small change in the cycle period can lead to the condensate atoms returning to the right well or tunneling to the left well. The system comes from a linear eigenstate back to a nonlinear one, which is completely different from the linear eigenstate evolution. We explain the results by using the energy level and the phase diagram.     

Hawking Radiation of Charged Particles in Reissner-NordstrSm Black Hole

We extend the method that Banerjee and Majhi have used to discuss Hawking radiation. Under the condition that the total energy and electrical charge of spacetime are conserved, we investigate Hawking radiation of the charged black hole by a new Tortoise coordinate transformation. Taking the reaction of the radiation of the particle to the spacetime into consideration, we not only derive the radiation spectrum that satisfies the unitary principle in quantum mechanics but also show that the contribution of ingoing particles is equal to the one of outgoing particles on the similar chemical potential term in radiation spectrum caused by charged particles.     

Photon tunneling and transmittance resonance through a multi-layer structure with a left-handed material

This paper investigates the photon tunneling and transmittance resonance through a multi-layer structure including a left-handed material(LHM).An analytical expression for the transmittance in a five-layer structure is given by the analytical transfer matrix method.The transmittance is studied as a function of the refractive index and the width of the LHM layer.The perfect photon tunneling results from the multi-layer structure,especially from the relation between the magnitude of the refractive index and the width of the LHM layer and those of the adjoining layers.Photons may tunnel through a much greater distance in this structure.Transmittance resonance happens,the peaks and valleys appear periodically at the resonance thickness.For an LHM with inherent losses,the perfect transmittance is suppressed.     

Quantum Tunneling of Two-Species Cold Bosonic Atoms in Optical Lattices

In this letter, we have studied quantum tunneling of two-species cold bosonic atoms in an optical lattices. When the optical lattice is not infinitely long and the spin excitations are not in the long-wavelength limit, quantum tunnelings are presented.     

Tight-binding study of quantum transport in nanoscale GaAs Schottky MOSFET

This paper explores the band structure effect to elucidate the feasibility of an ultra-scaled GaAs Schottky MOSFET (SBFET) in a nanoscale regime. We have employed a 20-band sp3d5s* tight-binding (TB) approach to compute E K dispersion. The considerable difference between the extracted effective masses from the TB approach and bulk values implies that quantum confinement affects the device performance. Beside high injection velocity, the ultra-scaled GaAs SBFET suffers from a low conduction band DOS in the Γ valley that results in serious degradation of the gate capacitance. Quantum confinement also results in an increment of the effective Schottky barrier height (SBH). Enhanced Schottky barriers form a double barrier potential well along the channel that leads to resonant tunneling and alters the normal operation of the SBFET. Major factors that may lead to resonant tunneling are investigated. Resonant tunneling occurs at low temperatures and low drain voltages, and gradually diminishes as the channel thickness and the gate length scale down. Accordingly, the GaAs (100) SBFET has poor ballistic performance in nanoscale regime.     

Tunneling of Dirac Particles from Kaluza-Klein Black Hole

Applying the fermions tunneling method, proposed by Kerner and Mann recently, we discuss the tunneling characteristics of Dirac particles from the stationary Kaluza-Klein black hole. To choose Gamma matrix conveniently and avoid the ergosphere dragging effect, we perform it in the dragging coordinate frame. The result shows that Hawking temperature in this case also can be reproduced by the general Dirac equation.     

Superfluidity of Paired Bosons from Correlated Tunneling

We study superfluidity of paired Bosonic atoms in optical lattices. The atoms have strong repulsive on-slte energy. Single atom tunneling is severely suppressed while the atom-pair may co-tunnel by the second order quantum transition, which induces paired superfluidity as repulsive nearest-neighbor interactions are included. The mean-field phase diagram and low energy excitations are explored for a square lattice system.     

Parikh-Wilczek Tunneling as Massive Particles from Noncommutative Schwarzschild Black Hole

In this paper, we apply the tunneling of massive particle through the quantum horizon of a Schwarzschild black hole in noncommutative spaeetime. The tunneling effects lead to modified Hawking radiation due to inclusion of back-reaction effects. Our calculations show also that noncommutativity effects cause the further modifications to the thermodynamical relations in black hole. We calculate the emission rate of the massive particles＇ tunneling from a Schwarzschild black hole which is modified on account of noncommutativity influences. The issues of information loss and possible correlations between emitted particles are discussed. Unfortunately even by considering noneommutativity view point, there is no correlation between different modes of evaporation at least at late-time. Nevertheless, as a result of spacetime noncommutativity, information may be conserved by a stable black hole remnant.     

Tunneling Radiation from a Static Spherically Symmetric Black Hole Surrounded by Quintessence

By extending the Parikh-Wilczek tunneling framework, we investigate the tunneling radiation of uncharged massless particles from a static spherically symmetric black hole surrounded by quintessence. The results are consistent with an underlying unitary theory.