Performance characteristics a nonlinear diode and optimal analysis of refrigerator

This paper establishes a model of a nonlinear diode refrigerator consisting of two diodes switched in the opposite directions and located in two heat reservoirs with different temperatures. Based on the theory of thermal fluctuations, the expressions of the heat flux absorbed from the heat reservoirs are derived. After the heat leak between the two reservoirs is considered, the cooling rate and the coefficient of performance are obtained analytically. The influence of the heat leak and the temperature ratio on the performance characteristics of the refrigerator is analysed in detail.     

33 W quasi-continuous-wave narrow-band sodium D_(2a) laser by sum-frequency generation in LBO

We demonstrate an all-solid quasi-continuous-wave （QCW） narrow-band source tunable to sodium D2a line at 589.159 nm. The source is based on sum-frequency mixing between lasers at 1064 nm and 1319 nm in a LBO crystal. The 1064 nm and 1319 nm lasers are produced from two diode side-pumped Nd：YAG master oscillator power amplifier （MOPA） laser systems, respectively. A 33 W output of 589 nm laser is obtained with beam quality factor M^2 = 1.25, frequency stability better than ±0.2 GHz and linewidth less than 0.44 GHz. A prototype 589 nm laser system is assembled, and a sodium laser guided star has been successfully observed in the field test.     

Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching＊

We use a simple and controllable method to fabricate GaN-based light-emitting diodes （LEDs） with 22° undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching （ICP-RIE）. Our exper- iment results show that the output powers of the LEDs with 22° undercut sidewalls are 34.8 rnW under a 20-mA current injection, 6.75% higher than 32.6 mW, the output powers of the conventional LEDs under the same current injection.     

High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers

A high power GaSb-based laser diode with lasing wavelength at 2 μm was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold current density was as low as 144 A/cm2 (72 A/cm2 per quantum well), and the slope efficiency was 0.2 W/A. The internal loss was 11 cm-1 and the internal quantum efficiency was 27.1%. The maximum output power of 357 mW under continuous-wave operation at room temperature was achieved. The electrical and optical properties of the laser diode were improved.     

Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AIGaN hole blocking layer

Blue InGaN light-emitting diodes （LEDs） with a conventional electron blocking layer （EBL）, a common n-A1GaN hole blocking layer （HBL）, and an n-A1GaN HBL with gradual A1 composition are investigated numerically, which involves analyses of the carrier concentration in the active region, energy band diagram, electrostatic field, and internal quantum efficiency （IQE）. The results indicate that LEDs with an n-AIGaN HBL with gradual AI composition exhibit better hole injection efficiency, lower electron leakage, and a smaller electrostatic field in the active region than LEDs with a conven tional p-A1GaN EBL or a common n-A1GaN HBL. Meanwhile, the efficiency droop is alleviated when an n-A1GaN HBL with gradual A1 composition is used.     

Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AIInGaN superlattice electron blocking layer

InGaN/AIlnGaN superlattice （SL） is designed as the electron blocking layer （EBL） of an InGaN/GaN-based light- emitting diode （LED）. The energy band structure, polarization field at the last-GaN-barrier/EBL interface, carrier concen- tration, radiative recombination rate, electron leakage, internal quantum efficiency （IQE）, current-voltage （l-V） perfor- mance curve, light output-current （L-l） characteristic, and spontaneous emission spectrum are systematically numerically investigated using APSYS simulation software. It is found that the fabricated LED with InGaN/AIInGaN SL EBL exhibits higher light output power, low forward voltage, and low current leakage compared with those of its counterparts. Meanwhile, the efficiency droop can be effectively mitigated. These improvements are mainly attributed to the higher hole injection efficiency and better electron confinement when InGaN/AIlnGaN SL EBL is used.     

A GaN-AIGaN-InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED

The advantages of a GaN-AlGaN-InGaN last quantum barrier （LQB） in an InGaN-based blue light-emitting diode are analyzed via numerical simulation. We found an improved light output power, lower current leakage, higher recombi- nation rate, and less efficiency droop compared with conventional GaN LQBs. These improvements in the electrical and optical characteristics are attributed mainly to the specially designed GaN-AlGaN-InGaN LQB, which enhances electron confinement and improves hole injection efficiency.     

Development of a ferroelectric cathode diode

As a promising kind of high current cold cathode, the Ferroelectric Cathode （FEC） has several significant advantages, such as a controllable trigger time, lower vacuum requirement and large emitting area fabricability. The emitting current density of the FEC fabricated at Tsinghua University was more than 200 A/cm^2. In order to make the ferroelectric cathode into practical applications, a high current density diode using a ferroelectric cathode was designed, based on the PIC simulation. The performance of the FEC diode was investigated experimentally. When the applied diode voltage was 60 kV, a current density of more than 250 A/cm^2 was obtained, and the current density distribution was also measured.     

A power and wavelength detuning-dependent hysteresis loop in a single mode Fabry-Prot laser diode

In this paper, we observe experimentally the optical bistability induced by the side-mode injection power and wave-length detuning in a single mode Fabry-Prot laser diode (SMFP-LD). Results show that the bistability characteristics of the dominant and injected modes are strongly dependent on the injected input optical power and wavelength detuning in an SMFP-LD. We observe three types of hysteresis loops: counterclockwise, clockwise, and butterfly hysteresis with various loop widths. In the case of a bistability loop caused by injection power, the transition from counterclockwise to clockwise in the hysteresis direction with the wavelength detuning from 0.028 nm to 0.112 nm is observed in a way of butterfly hysteresis for the dominant mode by increasing the wavelength detuning. The width of hysteresis loop, induced by wavelength detuning is also changed while the injection power is enhanced from 7 dBm to 5 dBm.     

High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 m ·cm2 with a total active area of 2.46×10-3 cm2 . Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250℃ in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9×10-5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure.     

Realization of Tip Tilting By 8-Step Line Tilting

By direct calculation of rotation matrices of SO（3）, we show how certain specific sequence of eight consecutive rotations of digital angles can yield a tilting of a facet mirror. We also design a detailed program specifically to tilt an array of mirrors from planar orientation to the required focusing orientation. We describe how to use the 8-step to realize the focusing of the mirror array. We have found, in our designed program, an important feature of row-sharing during the rotations for the columns and similarly the column-sharing during the rotations for the row. This feature can save a lot of operating time during the actual realization of the mechanical movements.     

On ηc line shape in charmonium transitions

The line shapes to observe ηc in charmonium transitions, i.e., ψ（2S）, J/ψ→γηc, are investigated. The ηc line shapes in exclusive decays or by observing the inclusive photon spectrum are given. The sensitivities to measure the ηc resonance parameters are also evaluated. With more than two thousand ηc events observed, the precision of the ηc decay width measurement will be improved by better than 3%. However, the uncertainties associated with the ηc modified line shapes will dominate the systematic errors and this will prohibit precision mass and width measurements.     

Comparison experiments of neon and helium buffer gases cooling in trapped ~(199)Hg~+ ions linear trap

The influences of different buffer gas, neon and helium, on199Hg+clock transition are compared in trapped199Hg+linear trap. By the technique of time domain’s Ramsey separated oscillatory fields, the buffer gas pressure frequency shifts of199Hg+clock transition are measured to be(d f /dPNe)(1/ f) = 1.8 × 10-8Torr-1for neon and(d f /dPHe)(1/ f) = 9.1 × 10-8Torr-1for helium. Meanwhile, the line-width of199Hg+clock transition spectrum with the buffer gas neon is narrower than that with helium at the same pressure. These experimental results show that neon is a more suitable buffer gas than helium in199Hg+ions microwave frequency standards because of the199Hg+clock transition is less sensitive to neon variations and the better cooling effect of neon. The optimum operating pressure for neon is found to be about 1.0 × 10-5Torr in our linear ion trap system.     

Rotational analysis and line intensities of the HCO B^2A＇-X^2A＇31^1 band at 296 K

This paper computes the rotational energy levels of the HCO B^2A＇-X^2A＇31^1 transition, especially, the higher values of the rotational quantum numbers NKa Kc and Ka, with the rotational constants which are obtained via B3LYP method with 6-311G basis set, and the results show that the calculated frequencies using the computed vibration-rotation energy levels are in reasonable agreement with the data from the experiment. Meanwhile, the line intensities of HCO are first reported, the results are of significance for the studying HCO.     

Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects

We describe the structure and testing of one-dimensional array parallel-optics photo-detectors with 16 photodiodes of which each diode operates up to 8 Gb/s. The single element is vertical and top illuminated 30μm-diameter silicon on insulator （Ge-on-SOI） PIN photodetector. High-quality Ge absorption layer is epitaxially grown on SO1 substrate by the ultra-high vacuum chemical vapor deposition （UHV-CVD）. The photodiode exhibits a good responsivity of 0.20 A/W at a wavelength of 1550 nm. The dark current is as low as 0.36/aA at a reverse bias of 1 V, and the corresponding current density is about 51 mA/cm2. The detector with a diameter of 30 t.trn is measured at an incident light of 1.55 μm and 0.5 mW, and the 3-dB bandwidth is 7.39 GHz without bias and 13.9 GHz at a reverse bias of 3 V. The 16 devices show a good consistency.     

HEM11 mode magnetically insulated transmission line oscillator： Simulation and experiment

A novel magnetically insulated transmission line oscillator （MILO） in which a modified HEM11 mode is taken as its main interaction mode （HEM11 mode MILO） is simulated and experimented in this paper. The excitation of the oscillation mode is made possible by carefully adjusting the arrangement of each resonant cavity in a two-dimensional slow wave structure. The special feature of such a device is that in the slow-wave-structure region, the interaction mode is HEM11 mode which is a TM-like one that could interact with electron beams effectively; and in the coaxial output region, the microwave mode is TE11 mode which has a favourable field density pattern to be directly radiated. Employing an electron beam of about 441 kV and 39.7 kA, the HEM11 mode MILO generates a high power microwave output of about 1.47 GW at 1.45 GHz in particle-in-cell simulation. The power conversion efficiency is about 8.4 % and the generated microwave is in a TEll-like circular polarization mode. In a preliminary experiment investigation, high power microwave is detected from the device with a frequency of 1.46 GHz, an output energy of 43 J 47 J, and a pulse duration of 44 ns-49 ns when the input voltage is 430 kV450 kV, and the diode current is 37 kA-39 kA.     

Study on High-Temperature Spectra of Asymptotic Asymmetric-Top Molecule O3

The line intensities of 001-000 transition of the asymptotic asymmetric-top Oa molecule at several temperatures are calculated by directly calculating the partition functions and regarding the rotationless transition dipole moment squared as a constant. The calculated values of the total internM partition sums （TIPS） are consistent with the data of HITRAN database with -0.61% at 296 K. The calculated line intensity data at 500 K and 3000 K are also in excellent agreement with the data in HITRAN database with less than 0.659% and 5.458% at 500 K and 3000 K, which provide a strong support for the calculations of partition function and fine intensity at high temperature. Then we extend the calculation to higher temperatures. The line intensities and simulated spectra of v3 band of the asymptotic asymmetric-top O3 molecule at 4000 and 5000 K are reported. The results are of significance for the studying of the molecular high-temperature spectrum including experimental measurements and theoretical calculations.     

A simple scheme to generate x-type four-charge entangled states in circuit QED

We propose a simple scheme to generate x-type four-charge entangled states by using SQUID-based charge qubits capacitively coupled to a transmission line resonator （TLR）. The coupling between the superconducting qubit and the TLR can be effectively controlled by properly adjusting the control parameters of the charge qubit. The experimental feasibility of our scheme is also shown.     

Electron states scattering off line edges on the surface of topological insulator

We study the local density of states （LDOS） for electrons scattering off the line edge of an atomic step defect on the surface of a three-dimensional （3D） topological insulator （TI） and the line edge of a finite 3D TI, where the front surface and side surface meet with different Fermi velocities, respectively. By using a S-function potential to model the edges, we find that the bound states existed along the step line edge significantly contribute to the LDOS near the edge, but do not modify the exponential behavior away from it. In addition, the power-law decaying behavior for LDOS oscillation away from the step is understood from the spin rotation for surface states scattering off the step defect with magnitude depending on the strength of the potential. Furthermore, the electron refraction and total reflection analogous to optics occurred at the line edge where two surfaces meet with different Fermi velocities, which leads to the LDOS decaying behavior in the greater Fermi velocity side similar to that for a step line edge. However, in the smaller velocity side the LDOS shows a different decaying behavior as x-1/2, and the wavevector of LDOS oscillation is no longer equal to the diameter of the constant energy contour of surface band, but is sensitively dependent on the ratio of the two Fermi velocities. These effects may be verified by STM measurement with high precision.     

Measurement of the friction coefficient of a fluctuating contact line using an AFM-based dual-mode mechanical resonator

A dual-mode mechanical resonator using an atomic force microscope （AFM） as a force sensor is developed. The resonator consists of a long vertical glass fiber with one end glued onto a rectangular cantilever beam and the other end immersed through a liquid-air interface. By measuring the resonant spectrum of the modified AFM cantilever, one is able to accurately determine the longitudinal friction coefficient ξv along the fiber axis associated with the vertical oscillation of the hanging fiber and the traversal friction coefficient ξh perpendicular to the fiber axis associated with the horizontal swing of the fiber around its joint with the cantilever. The technique is tested by measurement of the friction coefficient of a fluctuating （and slipping） contact line between the glass fiber and the liquid interface. The experiment verifies the theory and demonstrates its applications. The dual-mode mechanical resonator provides a powerful tool for the study of the contact line dynamics and the rheological property of anisotropic fluids.