Ground-state depleted solid-state lasers: principles, characteristics and scaling

A novel class of rare-earth-doped solid-state lasers is described. The ground-state depleted laser is pumped by an intense (more than tens of kW cm^–2) narrow-band (less than a few nm) laser source and is characterized by: (1) an unusually low laser ion doping density (5 to 10×10¹⁸ion cm^–3), (2) an unusually large fractional excited population inversion density (4 to 8×10¹⁸ ion cm^–3, or >75%), (3) a gain element that is optically thick at the pump wavelength and (4) a gain element that has a substantially uniform gain distribution due to a bleaching of the pump transition at the pump intensity utilized. These features enable efficient room-temperature operation of rare-earth-ion laser transitions terminating on the ground manifold. The relationships between laser parameters (cross-sections, saturation fluences and fluxes, bleaching wave velocities, etc.) are given and laser performance scaling relationships are presented and discussed.     

Measurement of the absolute Raman scattering cross sections of sulfur and the standoff Raman detection of a 6‐mm‐thick sulfur specimen at 1500 m

The absolute Raman scattering cross sections (σ_RS) for the 471, 217, and 153 cm⁻¹ modes of sulfur were measured as 6.0 ± 1.2 × 10⁻²⁷, 7.7 ± 1.6 × 10⁻²⁷, and 1.2 ± 0.24 × 10⁻²⁶ cm² at 815, 799, and 794 nm, respectively, using a 785‐nm pump laser. The corresponding values of σ_RS at 1120, 1089, and 1081 nm were determined to be 1.5 ± 0.3 × 10⁻²⁷, 1.2 ± 0.24 × 10⁻²⁷, and 1.2 ± 0.24 × 10⁻²⁷ cm² using a 1064‐nm laser. A temperature‐controlled, small‐cavity (2.125 mm diameter) blackbody source was used to calibrate the signal output of the Raman spectrometers for these measurements. Standoff Raman detection of a 6‐mm‐thick sulfur specimen located at 1500 m from the pump laser and the Raman spectrometer was made using a 1.4‐W, CW, 785‐nm pump laser. Copyright © 2010 John Wiley & Sons, Ltd.     

Measurement of the absolute Raman scattering cross section of the 1584‐cm−1 band of benzenethiol and the surface‐enhanced Raman scattering cross section enhancement factor for femtosecond laser‐nanostructured substrates

The absolute Raman scattering cross section (σ_RS) for the 1584‐cm⁻¹ band of benzenethiol at 897 nm (1.383 eV) has been measured to be 8.9 ± 1.8 × 10⁻³⁰ cm² using a 785‐nm pump laser. A temperature‐controlled, small‐cavity blackbody source was used to calibrate the signal output of the Raman spectrometer. We also measured the absolute surface‐enhanced Raman scattering cross section (σ_SERS) of benzenethiol adsorbed onto a silver‐coated, femtosecond laser‐nanostructured substrate. Using the measured values of 8.9 ± 1.8 × 10⁻³⁰ and 6.6 ± 1.3 × 10⁻²⁴ cm² for σ_RS and σ_SERS respectively, we calculate an average cross‐section enhancement factor (EF) of 0.8 ± 0.3 × 10⁶. Copyright © 2009 John Wiley & Sons, Ltd.     

Irradiation effects in CaF2 probed by Raman scattering

The formation conditions and dynamics of Ca colloids and point defects that appear in irradiated single crystals of CaF₂ were investigated by Raman spectroscopy. The intensity changes in the Raman spectra because of the presence of different concentrations of point defects and Ca colloids that emerged in CaF₂ after irradiation with 2.2 GeV Au ions were used to study their distribution and stability under illumination with three laser wavelengths (473, 532 and 633 nm) at different output powers (2 to 200 mW). A damage saturation at a fluence of 6 × 10¹¹ ion cm⁻² was observed. The dependence of the spectral changes on the ion fluence can be described by a core/halo damage cross‐section model. A radius of 13–18 nm was obtained for the outer (halo) cylinder, in agreement with previous swelling studies. Illuminations of irradiated samples with blue (473 nm) and green (532 nm) lasers were found to be extremely efficient in bleaching the samples, while illumination with a red (633 nm) laser did not lead to a sample recovery. This indicates that the bleaching process is governed by recombination of point defects that have to overcome an energy barrier. Typical time constants for the processes involved are presented. Copyright © 2016 John Wiley & Sons, Ltd.     

Temperature-dependent luminescence of GaAs doping superlattices

The photon energy of the luminescence between spatial separated n- and p-type doped layers of GaAs doping superlattices shifts with excitation density. At room temperature we observe a shift of the luminescence maximum in samples with high doping concentrations (n=4×10¹⁸cm⁻³), whereas for n=1×10¹⁸cm⁻³ this shift is observed at temperatures below 150K only. Temperature-dependent measurements between 4 and 700K show that the tunability disappears near a critical temperature, which is proportional to the doping concentration. A simple model including thermally activated direct transitions and tunable luminescence describes this temperature dependence.     

CW Thomson scattering from a low electron density hydrogen plasma using a photon counting technique

Thomson scattering from a low electron density (3×10¹²cm^?3) stationary hydrogen plasma was performed using a 3 watt CW argon ion laser along with a photon counting technique. An estimation is given for the laser power required for CW Thomson scattering in pulsed plasma experiments.     

Atomic Model Calculations of Gain Saturation in the 46.9 nm Line of Ne‐like Ar

The gain saturation in the 46.9 nm line of the Ar⁺⁸ laser is analyzed using an atomic kinetics code. The dependence of the gain (G) on the electron kinetic temperature (T_e) in the region (50 ‐150 eV) is calculated in the quasi steady‐state approximation for the different values of the electron density (N_e) and the plasma radius (r_pl). The influence of radiat on trapping, ion random and mean velocities, Stark line broadening and refraction losses on the gain saturation is taken into consideration. For r_pl = 150‐600 μm, the amplplication (G > 0 cm^‐1) exists in the large temperature/density domain (T_e = 60‐150 eV, N_e = 0.5‐10 × 10¹⁸ cm^‐3). However, the value G_s ∼ 1.4 cm^‐1 required for the gain saturation at the typical plasma length L_pl ∼ 15 cm is reached in the extremely narrow density regions at the high temperatures. The saturation is reached for r_pl = 600 μm at T^s_e = 150 eV in the region N^s_e = 1.8‐2 × 10¹⁸ cm ^‐3, for r_pl = 300 μm at T^s_e = 125 eV and N^s_e = 2.5‐3 × 10¹⁸ cm^‐3, and for r_pl = 150 μm at T^s_e = 110 eV and N^s_e = 3‐4 × 10¹⁸ cm^‐3. The broadest density region (N^s_e = 2 ‐8 × 10¹⁸ cm^‐3) is predicted for the narrowest column (r_pl = 150 μm) at the highest temperature (T^s_e = 150 eV). The operation in the broadest density region N^s_e, should make easier achievement of the gain saturation in the experiments.     

PbTe/CdTe量子点的光学增益

PbTe/CdTe量子点是一类新型异系低维结构材料,实验发现具有强的室温中红外光致发光现象.为研究这一材料体系的发光特性,建立了理论模型,计算了PbTe/CdTe量子点的光学跃迁和增益.模型基于k·p包络波函数方法并考虑了PbTe能带结构的各向异性.分析了量子点光学增益与量子点尺寸、注入载流子浓度的关系.结果表明,当注入载流子浓度在(0.3—3)×10¹⁸cm^-3范围时,尺寸为15—20nm的量子点可以产生 关键词： PbTe/CdTe量子点 光学增益 铅盐矿半导体     

Pump power dependence in resonance femtosecond stimulated Raman spectroscopy

Femtosecond stimulated Raman spectroscopy (FSRS) has emerged as a powerful new technique that is capable of obtaining resonance Raman spectra of fluorescent species and transient photochemical intermediates. Unlike related transient infrared absorption techniques, the FSRS signal is quite sensitive to the laser power utilized in the vibrational probing event. In particular, FSRS spectra are highly sensitive to the intensity of the picosecond Raman‐pump pulse. We have measured the power dependence of the FSRS signal using pulse energies from ~10⁻⁹ to ~10⁻⁵ J and molecules with a range of molar absorptivities at the Raman‐pump wavelength of 400 nm, including β‐carotene (ε₄₀₀ = 58 300 M⁻¹ cm⁻¹), para‐nitroaniline (17 800 M⁻¹ cm⁻¹), nitronaphthalene (247 M⁻¹ cm⁻¹) and ferrocene (57 M⁻¹ cm⁻¹). We show that for strongly absorbing molecular systems, such as β‐carotene and para‐nitroaniline, the ground‐state (GS) FSRS signal actually decreases with increasing pump power at pump fluences above ~10⁻² J cm⁻², due to depletion of the GS population. However, for weakly absorbing species like nitronaphthalene and ferrocene, the signal increases linearly with increasing pump fluence until ~0.5 J cm⁻², at which point two‐photon absorption by the solute induces nonlinear absorption of the pump pulse and attenuation of the FSRS signal. The data are quantitatively simulated with a photophysical kinetic model, and the results are analyzed to provide simple guidelines for acceptable Raman‐pump powers in resonance FSRS experiments. The acceptable Raman‐pump power is proportional to the focused beam area and depends inversely on the sample's molar absorptivity. Copyright © 2013 John Wiley & Sons, Ltd.     

Far-infrared laser oscillation in p-Ge

Time-resolved measurements, together with spectroscopic study with a grating monochromator, are made on far-infrared stimulated emission from p-Ge in crossed electric and magnetic fields. Gain saturation is confirmed, for the first time, to occur to establish laser oscillation. Small-signal gain per unit length deduced from the time constant of light amplification is 7.4 × 10^-3 cm^-1 and 2.7 × 10^-2 cm^-2, respectively, for samples with N_A − N_D ≅ 4.5 × 10¹³cm⁻³ and 1.7 × 10¹⁴ cm^-3. Output power detected at distance 28 cm from the sample is of order 1–10 W, but higher power over 100W is suggested for the total output from the sample.     

Temperature dependence of the tunable luminescence of GaAs doping superlattices

Doping superlattices show tunable optical and electrical properties due to the space charge induced separation of photoexcited or electrically injected carriers. We have investigated the tunable luminescence in GaAs doping superlattices of doping levels n=1×10¹⁸cm⁻³ and n=4×10 ¹⁸cm⁻³ as function of excitation density and sample temperature. The temperature dependence of the tunability was investigated in the range between 4 and 700K, and we found the critical transition temperatures T₀ at 90 and 460K for the low and high doped samples, respectively. The results verify the theoretical prediction concerning the transition temperature at which the luminescence changes from full to zero tunability.     

Energetic ion generation by Coulomb explosion in cluster gas and a low-density plastic foam with an intense femtosecond laser

The energy distributions of protons emitted from the Coulomb explosion of hydrogen clusters by an intense femtosecond laser have been experimentally obtained. Ten thousand hydrogen clusters were exploded, emitting 8.1-keV protons under laser irradiation of intensity 6 × 10¹⁶W/cm². The energy distributions are interpreted well by a spherical uniform cluster analytical model. The maximum energy of the emitted protons can be characterized by cluster size and laser intensity. The laser intensity scale for the maximum proton energy, given by a spherical cluster Coulomb explosion model, is in fairly good agreement with the experimental results obtained at a laser intensity of 10¹⁶–10¹⁷ W/cm² and also when extrapolated with the results of three-dimensional particle simulations at 10²⁰–10²¹ W/cm². Energetic proton generation in low-density plastic (C₅H₁₀) foam by intense femtosecond laser pulse irradiation has been studied experimentally and numerically. Plastic foam was successfully produced by a sol-gel method, achieving an average density of 10 mg/cm³. The foam target was irradiated by 100-fs pulses of a laser with intensity 1 × 10¹⁸ W/cm². A plateau structure extending up to 200 keV was observed in the energy distribution of protons generated from the foam target, with the plateau shape explained well by Coulomb explosion of lamella in the foam. The laser-foam interaction and ion generation were studied qualitatively by two-dimensional particle-in-cell simulations, which indicated that energetic protons are mainly generated by the Coulomb explosion. From the results, the efficiency of energetic ion generation in a low-density foam target by Coulomb explosion is expected to be higher than in a gas-cluster target.     

Instability-free ion acceleration by two laser pulses

We demonstrate the instability-free ion acceleration regime by introducing laser control with two parallel circularly polarized laser pulses at an intensity of I = 6.8 × 10²¹?W/cm², normally incident on a hydrogen foil. The special structure of the equivalent wave front of those two pulses, which contains Gaussian peaks in both sides and a concavity in the centre (2D), can suppress the transverse instabilities and hole boring effects to constrain a high density ion clump in the centre of the foil, leading to an acceleration over a long distance and gain above 1GeV/u for the ion bunches.     

Trace-gas sensor based on mid-IR difference-frequency generation in PPLN with saturated output power

The development and characterization of a compact pulsed mid-IR laser source for sensitive on-line trace-gas analyses in the 3–4 μm wavelength range is reported. The source is based on an advantageous difference-frequency mixing configuration in periodically poled LiNbO₃ (PPLN) with a cw external-cavity diode laser (ECDL; 810–830 nm) for broad and accurate tunability and a diode-pumped passively Q-switched Nd:YAG laser (1064 nm) for high mid-IR peak power. With 5 mW cw pump and 4.7 kW signal peak power incident on a 19 mm long PPLN crystal, a maximum of 360 μW mid-IR peak power was generated. The narrowband (∼150 MHz) radiation was saturated by a factor of 15 compared with the nonsaturated case due to depletion of the pump laser radiation. This results in a very high amplitude stability of the generated mid-IR power and thus in a high detection sensitivity. A minimum detectable absorption coefficient of 2.8×10⁻⁸ cm⁻¹ was achieved in combination with a 36.2 m multipass cell in an averaging time of 20 s, as demonstrated by on-line analyses of formaldehyde traces near 3.53 μm.     

Energy scaling of quasi-monoenergetic electron beams from laser wakefields driven by 40-TW ultra-short pulses

By focusing 40-TW, 30-fs laser pulses to the peak intensity of 10¹⁹ W/cm² onto a supersonic He gas jet, we generate quasi-monoenergetic electron beams for plasma density in the specific range 1.5×10¹⁹ cm^-3≤n_e≤3.5×10¹⁹ cm^-3. We show that the energy, charge, divergence and pointing stability of the beam can be controlled by changing n_e, and that higher electron energies and more stable beams are produced for lower densities. The observed variations are explained physically by the interplay among pump depletion and dephasing between accelerated electrons and plasma wave. Two-dimensional particle-in-cell simulations support the explanation by showing the evolution of the laser pulse in plasma and the specifics of electron injection and acceleration. An optimized quasi-monoenergetic beam of over 300 MeV and 10 mrad angular divergence is demonstrated at a plasma density of n_e≃1.5×10¹⁹ cm^-3. PACS 52.35.-g; 52.38.Hb; 52.38.Kd; 52.65.-y     

Photolytical XeF(C–A) laser amplifier of femtosecond optical pulses: gain measurements and pump efficiency

Gain characteristics of a photolytically driven XeF(C–A) laser amplifier are studied experimentally in the unsaturated amplification regime. The gaseous active medium is optically pumped by vacuum-ultraviolet (VUV) radiation from two large-area multichannel surface discharges initiated along opposite walls of the amplifier chamber. A total gain factor of 10² is obtained for the ultrashort optical pulses under multipass amplification in the active volume of 40?×?18?×?4 cm³ dimensions with a spatially homogeneous gain distribution. Spectral measurements reveal a good conservation of the seed pulse spectrum. Small-signal gain reaching 2×10^-3 cm^-1 is observed for the blue-green seed pulses of 150 fs duration, as well as for the continuous seed radiation at 488 nm. The obtained gain values, being compared with the gain calculated for the measured pumping radiation power, indicate that the quantum yield of the XeF(B) formation as a result of the XeF₂ photodissociation is high and approaches unity within the spectral band of the XeF₂ VUV photodissociation continuum.     

The study of damage and optical properties in LiNbO3 implanted by MeV Er and He ions

Abstract

Two LiNbO₃ (X and Y cut) crystals from different companies were implanted by 3.0 MeV Er ions to a dose of 7.5 × 10¹⁴ ions/cm² and 3.5 × 10¹⁴ ions/cm² with different beam current densities, respectively. After annealing at 1060°C in air for 2 hours, one LiNbO₃ sample was implanted by 1.5 MeV He ions to a dose of 1.5 × 10¹⁶ ions/cm². The Rutherford backscattering/channeling and prism coupling method have been used to study the damage and optical properties in implanted LiNbO₃. The results show: (1) the damage in LiNbO₃ created by 3.0 MeV Er ions depends strongly on the beam current density; (2) after annealing at 1060°C in air for 2 hours, a good Er doped LiNbO₃ crystal was obtained; (3) there is waveguide formation possible in this Er-doped annealed LiNbO₃ after 1.5 MeV He ion implantation. It is suggested that annealing is needed to remove the damage created by MeV Er ions before the MeV He ion implantation takes place, to realize the waveguide laser for Er doped LiNbO₃.     

Three-dimensional simulation of laser–plasma-based electron acceleration

A sequential three-dimensional (3D) particle-in-cell simulation code PICPSI-3D with a user friendly graphical user interface (GUI) has been developed and used to study the interaction of plasma with ultrahigh intensity laser radiation. A case study of laser–plasma-based electron acceleration has been carried out to assess the performance of this code. Simulations have been performed for a Gaussian laser beam of peak intensity 5 × 10¹⁹ W/cm² propagating through an underdense plasma of uniform density 1 × 10¹⁹ cm^− 3, and for a Gaussian laser beam of peak intensity 1.5 × 10¹⁹ W/cm² propagating through an underdense plasma of uniform density 3.5 × 10¹⁹ cm^− 3. The electron energy spectrum has been evaluated at different time-steps during the propagation of the laser beam. When the plasma density is 1 × 10¹⁹ cm^− 3, simulations show that the electron energy spectrum forms a monoenergetic peak at ~14 MeV, with an energy spread of ±7 MeV. On the other hand, when the plasma density is 3.5 × 10¹⁹ cm^− 3, simulations show that the electron energy spectrum forms a monoenergetic peak at ~23 MeV, with an energy spread of ±7.5 MeV.     

Anti-stokes emission in an additively colored KCl caused by excitation with a Nd: YAG laser

Abstract

We have observed the quadratic laser power dependence of two anti-Stokes emission bands at 15100cm^?1 and 14000cm^?1 in an additively colored KCl when excited with a Nd:YAG laser. The cross section of two photon absorption to cause the 14000cm^?1 band is estimated to be 4×10^?40cm⁴sec. We have observed that emission intensities are dependent on temperature in the range between 4. 2K and 130K. They are enhanced by means of optical bleaching and also with the increase of the F concentration. From a qualitative analysis of these observations, we propose that these emissions are correlated to the loose aggregation of the F centers.     

Crystalline to amorphous transformations in ion implanted GaP

Abstract

The amorphization process of GaP by ion implantation is studied. The samples of 〈111〉 oriented GaP were implanted at 130 K with various doses 5 × 10¹³-2 × 10¹⁶ cm^?2 of 150 keV N⁺ ions and with the doses of 6 × 10¹²-1.5 × 10¹⁵ cm^?2 of 150 keV Cd⁺ ions. Room temperature implantations were also performed to see the influence of temperature on defect production. Rutherford backscattering and channelling techniques were used to determine damage in crystals. The damage distributions calculated from the RBS spectra have been compared with the results of Monte-Carlo simulation of the defect creation.

The estimated threshold damage density appeared to be independent on ion mass and is equal 6.5 × 10²⁰ keV/cm³. It is suggested that amorphization of GaP is well explained on the basis of a homogenous model.