InSb(111)表面硫处理的研究

本文用俄歇电子能谱、X射线光电子能谱和紫外光电子能谱对用硫化铵溶液处理的InSb表面进行研究。结果表明,硫处理以后在样品表面生成。一层厚度约8?的硫化物钝化层,它对防止表面的氧化和碳沾污有明显的钝化作用。钝化层中,破原子既与锑原子成键,引起Sb3d芯能级发生1.9eV的化学位移;又与铟原子成键,引起In4d芯能级发生0.6—0.7eV的化学位移。350℃的真空退火使锑的硫化物发生分解。500℃退火没能使铟的硫化物完全分解,仍有一部分硫原子以铟的硫化物形式留在样品表面。 关键词：     

HT-7U第一壁材料在HT-7装置中的辐照实验研究

把为HT-7U装置开发的系列碳基面对等离子体材料及其比对样品安装在样品架上，通过磁力传送机构送入HT-7装置刮削层中进行辐照实验研究。经过若干次等离子体放电实验后，取出样品进行表面形貌。表面元素成分及深度分布的X射线光电子能谱分析。结果发展，碳石墨材料的渗杂改性和抗等离子体溅射腐蚀的B4C/SiC梯度功能涂层可以有效地提高其抗待了子体轰击的能力。     

基于扫描聚焦XPS技术的InGaAs表面清洁研究

为了获得清洁度更高的InGaAs材料表面,利用氢氟酸溶液、盐酸与水的混合溶液、盐酸与异丙醇的混合溶液,研究了化学清洗方法对材料表面碳污染物和氧化物的去除效果,并在此基础上提出了一种与紫外臭氧清洗相结合的方法。利用扫描聚焦X射线光电子能谱技术,对不同方法清洗后的InGaAs样品表面进行分析,基于样品表面产生的二次电子图像,对表面进行了微区特征分析,精准检测了表面化学成分和表面被腐蚀程度。分析发现,基于氢氟酸溶液的刻蚀会严重腐蚀样品表面,破坏表面结构和成分,而结合了紫外臭氧清洗的基于盐酸和异丙醇混合溶液的刻蚀对样品表面具有更好的清洁效果,能够更好地去除表面的碳污染物和氧化物。     

InSb(110)表面S,O原子吸附的第一性原理研究

基于第一性原理方法, 采用广义梯度近似的交换关联势, 对InSb材料(110)表面的硫吸附和氧吸附之后体系性质的差异进行了分析. 讨论了两种吸附下的键长、键角、能带结构和态密度的变化, 从理论上论证了硫吸附比氧吸附对InSb红外探测器表面态的钝化有优越性, 有利于工艺上在钝化时的选择. 关键词： 第一性原理 InSb 硫吸附 氧吸附     

Nd薄膜靶表面氧化过程研究

用Ａｕｇｅｒ电子能谱（ＡＥＳ）对Ｘ光激光实验使用的Ｎｄ薄膜靶的表面氧化进行了分析，结合Ａｒ离子束刻蚀进行元素的深度分布剖析，得到了表面氧化层厚度，所得结果与Ｒｕｔｈｅｒ－ｆｏｒｄ背散射（ＲＢＳ）方法测量的结果相吻合。实验表明，样品暴露在空气中２０至３０ｍｉｎ，氧化即基本达到饱和，相应的氧化层厚度约为２０ｎｍ。     

Ti/AIN陶瓷界面反应的光电子能谱研究

用X射线光电子能谱(XPS)研究了在室温和超高真空条件下金属Ti淀积在AlN陶瓷表面上的化学反应过程.在金属Ti淀积之前,从AlN陶瓷的能谱中的Ols和Al2P的结合能可以看到因是样品的主要杂质,而且样品表面部分的Al被氧化.当样品淀积了金属Ti以后,发现刚淀积上去的Ti是氧化状态,还发现在Ti淀积的同时则Nls在高结合能处(402和406eV)出现新峰.随着Ti淀积厚度的增加,Ti低结合能的成份在增加而Al的氧化成份逐渐增加,Nls高结合能处的峰(402和406eV)也逐渐增高,更进一步成为主导地.N在 关键词：     

X射线激光Nd薄膜靶表面氧化特性研究

 利用石英晶体振荡技术测量了不同环境中稀土元素Nd薄膜靶表面氧化速率,用俄歇电子能谱,扫描电镜,X射线衍射,X射线光电子能谱分析了Nd薄膜表面氧化过程,发现保存环境对靶的表面氧化行为有重要影响。空气中水分是引起Nd快速氧化的关键因素。表面氧化层为团聚状的非晶结构,氧化物与金属的体各比较小可能是引起Nd薄膜较易氧化的原因。Nd薄膜靶表面覆盖有一层氢氧化物,其厚度按保存在真空、干燥空气和潮湿空气环境而依次递增。     

GaN基白光LED电极的失效机制

对负电极脱落造成白光LED失效进行了研究。结合扫描电子显微镜(SEM)和能谱分析(EDS)对退化样品芯片进行了表面形貌表征和微区成分分析。SEM观察到退化样品负极脱落处表面粗糙不平,且透明导电薄膜存在颗粒状结晶。经EDS检测发现负极脱落处存在腐蚀性氯元素,并在封装胶中检测出氯。分析认为,封装胶中残留的氯离子与负极中Al层发生的电化学腐蚀是致使样品失效的主要原因。     

大气环境下重复频率激光辐照45#钢反射率变化分析

 通过大气环境中重复频率激光辐照45#钢样品的表面反射率测量以及回收样品的金相分析和表面能谱分析，对表面反射率变化过程进行了研究。理论计算与实验对比表明：激光最初作用于由氧化物和吸附物形成的金属表面膜层，此时有较强的吸收；随后激光起“清洗”、“抛光”作用，然后直接作用于金属原子，反射增强；温度的升高使样品的电阻率增大导致反射率降低，随着温度的升高材料表面开始氧化以及其后的正反馈过程是材料反射系数持续下降的主要原因。     

纯铀表面的激光快速熔凝处理

铸态纯铀不耐腐蚀，放置于空气中在很短的时间内就会使表面氧化而变质。激光快速熔凝处理是激光表面改性技术中的一项重要而先进的技术内容，纯铀经过激光快速熔凝处理后，其抗腐蚀能力明显增强，同时也可以提高铀表层的耐磨性和疲劳强度。试验表明：激光快速熔凝处理的铀试样比未处理的铀明显增强，在空气中放置数年后，其处理层的颜色基本没有变化。     

Interface of anodic sulfide-oxide on n-type InSb

A novel anodic sulfidization process for forming native sulfide-oxide films on n-type InSb is described. The results of Auger electron spectroscopy analysis indicate that native sulfide-oxide films are formed from aqueous sulfide solutions. The measured capacitance-voltage characteristics of metal-insulator-semiconductor devices indicate that the films have a low fixed surface charge density of the order of 3×10¹⁰ cm^–2 and small hysteresis. The native sulfide-oxide films leave the surface of n-type InSb practically at flatband and in this respect are superior to the passivation layers of anodic oxide and direct plasma SiN _x . The interface between InSb and its native sulfide-oxide in combination with plasma CVD SiN _x has excellent electrical properties.     

Study of the influence of native oxide layers on atomic force microscopy imaging of semiconductor surfaces

We have investigated the influence of the native oxide layer on semiconductor surfaces on the imaging properties of the atomic force microscope operated under ambient conditions by using epitaxial In_1–x Ga _x As layers grown by Metal-Organic Chemical Vapour Deposition (MOCVD) on (001) oriented InP substrates which have been kept under ambient conditions for two years. The thickness and composition of the native oxide layers were studied with ellipsometry and X-ray photoelectron spectroscopy, respectively. Subsequently, the sample surfaces were imaged by means of atomic force microscopy operated in air which revealed terrace structures separated by monoatomic steps. The obtained data were compared with the surface morphology which can be expected from the MOCVD growth process. The results suggest that an accurate study of semiconductor layer growth by atomic force microscopy in air is possible.     

Sulfide passivation of InAs(100) substrates in Na<Subscript>2</Subscript>S solutions

Treatment of the InAs(100) surface with a 1M aqueous solution of sodium sulfide (Na₂S) is found to result in the removal of a natural oxide layer from this surface with the formation of a continuous chemisorbed passivating layer of sulfur atoms that are coherently bonded to indium atoms of the crystal surface. No etching of the InAs surface in the sulfide solution occurs. The passivated InAs samples are characterized by a multiple increase in the photoluminescence intensity. The sulfide layer is desorbed from the InAs surface at temperatures of ～400°C. This leads to the formation of a clean In-stabilized (100) surface with a (4 × 2) reconstruction. A simple technique is developed using sulfide passivation for preparing atomically smooth (2 × 4) growth surfaces of the InAs(100) substrates that are suitable for molecular-beam epitaxy of highly perfect layers of compounds based on CdSe.     

Improved GaSb surfaces using a (NH4)2S/(NH4)2S04 solution

Bulk (1 0 0) n-GaSb surfaces have been treated with a sulphur based solution ((NH₄)₂S/(NH₄)₂SO₄) to which sulphur has been added, not previously reported for the passivation of GaSb surfaces. Au/n-GaSb Schottky barrier diodes (SBDs) fabricated on the treated material show significant improvement compared to that of the similar SBDs on the as-received material as evidenced by the lower ideality factor (n), higher barrier height (?_b) and lower contact resistance obtained. Additionally, the reverse leakage current, although not saturating, has been reduced by almost an order of magnitude at −0.2 V. The sample surfaces were studied by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The native oxide, Sb–O, present on the as-received material is effectively removed on treating with ([(NH₄)₂S/(NH₄)₂SO₄]+S) and (NH₄)₂S. Analysis of the as-received surface by XPS, prior to and after argon sputtering, suggests that the native oxide layer is ≤8.5 nm.     

A study of the 42CrMo4 steel surface by quantitative XPS electron spectroscopy

Quantitative X-ray photoelectron spectroscopy was used to characterize the native oxide film formed on 42CrMo4 steel surface by air exposure in normal conditions. In order to determine the thickness and composition of the oxide layer we have used a stacking layer model together with experimental XPS sputtering depth profiling. At a nanoscale study, to obtain quantitative results one must take into account fundamental parameters like the attenuation depth of photoelectrons. We have found that both lepidocrocit (γ-FeOOH) and magnetite (Fe₃O₄) were present and the total thickness of the oxide layer was 16 monolayers.     

Growth and use of metal nanocrystal assemblies on high-density silicon nanowires formed by chemical vapor deposition

In this paper, we describe the growth and potential application of metal nanocrystal assemblies on metal-catalyzed, CVD-grown silicon nanowires (SiNWs). The nanowires are decorated by chemical assembly of closely spaced (1–5 nm) Ag (30–100 nm diameter) and Au (5–25 nm diameter) nanocrystals formed from solutions of AgNO₃ and NaAuCl₄·2H₂O, respectively. The formation and growth of metal nanocrystals is believed to involve the galvanic reduction of metal ions from solution and the subsequent oxidation of available Si-hydride sites on the surfaces of the nanowires. A native oxide layer suppresses formation of metal nanocrystals; adding HF to the ionic solutions significantly increases the density of nanocrystals on the surfaces of the nanowires. The nanocrystals coating the nanowires were characterized by X-ray photoelectron spectroscopy, scanning electron microscopy, and X-ray diffraction. Ag nanocrystals on the nanowires afford sensitive detection of Rhodamine 6G (R6G) molecules in the 100 picomolar–micromolar range by surface enhanced Raman spectroscopy. In addition, Au nanocrystals formed on selected surfaces of a substrate of arbitrary shape can serve as effective nuclei for localized nanowire growth. PACS 81.07.b; 81.15.Gh     

Dissociation reactions of CO Gas on Fe and Fe3O4 surfaces observed by Raman-ellipsometry spectroscopy

A combined system of Raman spectroscopy and ellipsometry is developed for the study of catalyst surfaces on which a chemical reaction is taking place. The dielectric function and the thickness of a surface layer or a surface compound produced in the reaction are analyzed by ellipsometry; vibrational modes of the compound and surface species are analyzed by Raman spectroscopy, and the products in the gas phase by mass spectrometry. The system is applied to the study of the Boudouard and dissociation reactions of CO molecules on Fe and Fe₃O₄ catalysts. A surface layer produced by diffused C and O atoms, a thin oxide layer produced on the Fe by the CO dissociation reaction, and graphite layers produced by the Boudouard reaction are analyzed. Raman spectra reveal the existence of several kinds of carbon species such as defective graphite and an Fe carbide formed on the Fe and Fe₃O₄ surfaces. Specific Raman bands at 1121 and 1147 cm^-1 are tentatively concluded to be produced from microscopic clusters of surface graphite. The reaction of the defective graphite with H₂ gas is found to be stepwise on a time scale of seconds.     

Effect of the chemistry and structure of the native oxide surface film on the corrosion properties of commercial AZ31 and AZ61 alloys

The purpose of this study has been to advance in knowledge of the chemical composition, structure and thickness of the thin native oxide film formed spontaneously in contact with the laboratory atmosphere on the surface of freshly polished commercial AZ31 and AZ61 alloys with a view to furthering the understanding of protection mechanisms. For comparative purposes, and to more fully describe the behaviour of the native oxide film, the external oxide films formed as a result of the manufacturing process (as-received condition) have been characterised. The technique applied in this research to study the thin oxide films (thickness of just a few nanometres) present on the surface of the alloys has basically been XPS (X-ray photoelectron spectroscopy) in combination with ion sputtering. Corrosion properties of the alloys were studied in 0.6 M NaCl by measuring charge transfer resistance values, which are deduced from EIS (electrochemical impedance spectroscopy) measurements after 1 h of exposure. Alloy AZ61 generally showed better corrosion resistance than AZ31, and the freshly polished alloys showed better corrosion resistance than the alloys in as-received condition. This is attributed to a combination of (1) higher thickness of the native oxide film on the AZ61 alloy and (2) greater uniformity of the oxide film in the polished condition. The formation of an additional oxide layer composed by a mixture of spinel (MgAl₂O₄) and MgO seems to diminish the protective properties of the passive layer on the surface of the alloys in as-received condition.     

Surface oxidation investigation of Ni36Fe32Cr14P12B6 glass using angle resolved XPS

Native oxide and in-situ prepared, dry oxides of Ni₃₆Fe₃₂Cr₁₄P₁₂B₆ metallic glass have been investigated using angle resolved X-ray photoelectron spectroscopy (XPS or ESCA). The core-level binding energies of the various constituents of clean and oxidized samples have been determined accurately. A qualitative as well as quantitative estimation of elements in the outermost surface layers with and without oxidation is given by comparing XPS results obtained at normal and grazing emission angles. Stepwise oxidation leads to growing thickness of the surface oxide layer and to identification of different oxide species. The maximum thickness of the in-situ prepared oxide was determined as 3.5 nm compared to 4.5 nm for the native oxide. The sequence of oxidation is found to be Cr, Fe, B, P and Ni, but only some of the P and Ni atoms in the surface region are oxidized. The oxidation reaction induces diffusion of the constituents in the surface region as monitored by the change of relative intensities of the various peaks. For instance, P and especially Ni are strongly depleted in the oxide layer whereas Fe, Cr, and especially B are enriched. Differences between native and dry oxide have been observed and are discussed. The main difference is the abundance of carbon and oxygen containing species other than oxides in the native layer. Ar⁺ sputtering of the dry oxide layer leads to stochiometric changes in the surface region which are due to preferential sputtering.     

Investigation of nanoparticulate silicon as printed layers using scanning electron microscopy,transmission electron microscopy,X‐ray absorption spectroscopy and X‐ray photoelectron spectroscopy

The presence of native oxide on the surface of silicon nanoparticles is known to inhibit charge transport on the surfaces. Scanning electron microscopy (SEM) studies reveal that the particles in the printed silicon network have a wide range of sizes and shapes. High‐resolution transmission electron microscopy reveals that the particle surfaces have mainly the (111)‐ and (100)‐oriented planes which stabilizes against further oxidation of the particles. X‐ray absorption spectroscopy (XANES) and X‐ray photoelectron spectroscopy (XPS) measurements at the O 1s‐edge have been utilized to study the oxidation and local atomic structure of printed layers of silicon nanoparticles which were milled for different times. XANES results reveal the presence of the +4 (SiO₂) oxidation state which tends towards the +2 (SiO) state for higher milling times. Si 2p XPS results indicate that the surfaces of the silicon nanoparticles in the printed layers are only partially oxidized and that all three sub‐oxide, +1 (Si₂O), +2 (SiO) and +3 (Si₂O₃), states are present. The analysis of the change in the sub‐oxide peaks of the silicon nanoparticles shows the dominance of the +4 state only for lower milling times.