Growth and characterization of lead-free Ba(1−x)CaxTi(1−y)ZryO3 single crystal

A lead-free Ba_(1?x)Ca_xTi_(1?y)Zr_yO₃ (BCZT) single crystal (x=0.08, y=0.26) was grown by the Czochralski (CZ) method in a mixed flux of TiO₂ and ZrO₂. The composition of as-grown BCZT was analyzed by electron probe micro-analysis. The structure, dielectric properties and phase transition were investigated at different temperatures. The X-ray diffraction results confirmed that the structure of the as-grown BCZT crystal was cubic both at 25 °C and 500 °C. The temperature dependence of the dielectric constant and Raman spectra characterization revealed that there was a phase transition from cubic to tetragonal, which happened between 200 K and 250 K. With increasing frequency, the Curie temperature shifted towards high temperature.     

Optical band gap and Raman spectra in some (Bi2O3)x(WO3)y(TeO2)100−x−y and (PbO)x(WO3)y(TeO2)100−x−y glasses

The glasses representing (Bi₂O₃)_x(WO₃)_y(TeO₂)_100?x?y and (PbO)_x(WO₃)_y(TeO₂)_100?x?y systems were prepared. The dilatometric glass-transition temperatures of examined glass samples were found in the region 383–434 °C, the coefficient of thermal expansion varied from 12 to 16 ppm/°C and the density ranged from 6.30₂ to 6.80₈ g/cm³. From the optical transmission measurements of thin glassy bulk samples prepared by a glass blowing, the optical gap values were found in the narrow region 3.21–3.36 eV. For the temperature interval 300–480 K, the values of the temperature coefficient of the optical band gap varied from 3.7 × 10^?4 to 5.24 × 10^?4 eV/K. It is suggested that Raman feature observed at around 350 cm^?1 can be assigned to an overlap of Raman bands attributed to WO₆ corner shared octahedra and to the following three atomic linkages: Bi–O–Te, Pb–O–Te and W–O–Te.     

Electromechanical and electro-optic properties of xBiScO3–yBiGaO3–(1−x−y)PbTiO3 single crystals

Single crystals in the xBiScO₃–yBiGaO₃–(1−x−y)PbTiO₃ (BS–BG–PT) system were grown by the high temperature solution method using Pb₃O₄ and Bi₂O₃ as the flux. The dielectric permittivity (ε_r) at room temperature for unpoled tetragonal crystals was determined to be 500–600 with dielectric loss tangents less than 0.3%. The Curie temperature was found to be around ∼420–450°C, with a dielectric maximum, exhibiting relaxor behavior. The longitudinal piezoelectric coefficient (d₃₃) was found to be ∼300 pC/N for 〈0 0 1〉 oriented tetragonal crystals with electromechanical coupling factor (k₃₃) of 75%, with a shear mode, d₁₅∼290 pC/N and k₁₅∼45%, lateral mode, d₃₁∼−55 pC/N and k₃₁∼−37%. The remnant polarization (P_r) was 46 μC/cm² with a coercive field (E_c) of 43 kV/cm at 1 Hz and DC field of 60 kV/cm. The linear electro-optic (E-O) coefficients of poled crystals determined using an automated scanning Mach–Zehnder interferometer method at room temperature and wavelength of 632.8 nm were r₃₃=36 and r₁₃=4 pm/V, respectively.     

Investigation of the structure and properties of (K x (NH4)1 − x )3H(SO4)2 single crystals

The influence of isomorphous replacement in the cation sublattice on the kinetics of the phase transition in single crystals of the solid solutions (K _x (NH₄)_{1 ? x} ) _m H _n (SO₄)_{(m + n)/2} · yH₂O belonging to the K₃H(SO₄)₂-(NH₄)₃H(SO₄)₂-H₂O salt system was studied. Superproton phase transitions for the end compositions of this system have been found earlier. The optical and thermal properties of crystals with the composition (K,NH₄)₃H(SO₄)₂ in the temperature range from 295 to 500 K were investigated, and the crystal structure was determined at 295 K. The results of the study and the comparison with the literature data show that the replacement of potassium atoms with ammonia leads to a fundamental change in the kinetics of the phase transition, the phase-transition temperature remaining virtually unchanged.     

Bias-induced changes in carrier type of Pb(1−x)Fe(x)S nanocrystalline solution grown thin films

Change of majority carrier type was achieved in nanocrystalline Pb_(1−x)Fe_(x)S thin films by applying a DC-bias on the substrate during their growth by solution growth technique. Critical control of biasing and pH of the solution bath are observed to be necessary to achieve this change. The DC-bias results in slight change in relative concentrations of the constituents in the films, which lead to change in majority carriers without any measurable change in lattice parameter. This modification to the conventional solution growth technique provides the possibility to grow abrupt homojunctions in the nanocrystalline films by sudden change in DC-biasing during film growth.     

Crystal structure of α‴-(Zn1−x Cd x )3As2 (x = 0.26)

Single crystals of the α?-phase of (Zn_{1 ? x} Cd _x )₃As₂ solid solution (x = 0.26) have been prepared and investigated by X-ray diffraction analysis. The tetragonal unit-cell parameters are found to be a = b = 8.5377(2) Å, c = 24.0666(9) Å, sp. gr. I4₁/amd, Z = 16. Zn and Cd atoms in the crystal statistically occupy three symmetrically independent positions in the mirror planes and are tetrahedrally coordinated by arsenic atoms. (Zn,Cd) tetrahedra share edges to form a three-dimensional structure framework. The α?-phase is geometrically related to the fluorite structure. The character of arrangement of tetrahedral vacancies in fluorite-like unit cells is revealed. Chains of tetrahedral vacancies form microchannels oriented parallel the a and b axes, which pierce the three-dimensional structure framework at different levels along the c axis. The structure of α″-Cd₃As₂ crystals is found to be similar to that of α?-(Zn_0.74Cd_0.26)₃As₂.     

Miscibility gap calculation for Ga1−xInxNyAs1−y including strain effects

A method including strain effects is introduced for calculating the miscibility gap of the Ga_xIn_1−xN_yAs_1−y material system. The Gibbs free energy is computed using the delta lattice parameter model and the conventional solution model. The contribution caused by the strain energy due to the mismatch between substrate and epitaxial layer is added. The spinodal points can be calculated from this expression. The critical temperature above which the solid is metastable has been found to be increased due to strain effects. It is pointed out that the result of the calculation depends on the choice of substrate. The miscibility gaps for Ga_xIn_1−xAs, GaN_yAs_1−y and Ga_xIn_1−xN_yAs_1−y are evaluated by this method for a more realistic model of crystal growth.     

Crystal structure of cis-[Ru(bpy)2{PMe(o-tol)2}Cl+][ClO−4]: Steric effects in some PMen(o-tol)3−n (n = 1-3) derivatives of ruthenium(II)

The complex cis-[Ru(bpy)₂{PMe(o-tol)₂}Cl⁺][ClO^– ₄] crystallizes in space group P2₁/c witha = 9.375(2) Å, b = 22.019(7) Å, c = 16.153(4) Å, = 90.83(2)°, V = 3333.9(16) ų and D(calc'd) = 1.547 g/cm³ for Z = 4. The Ru-PMe(o-tol)₂ bond length of 2.357(3) Å is significantly longer than distances of Ru-PMe₂(o-tol) = 2.324(2) Å and Ru-PMe₃ = 2.310(2) Å in analogous complexes. The corresponding Ru-P(o-tol)₃ complex has eluded synthesis, probably due to steric hindrance.     

Electrical properties of glass and liquid semiconductor system (As2Te3)x(Tl2Se)1−x

We have measured the electrical conductivity and thermoelectric power of the pseudobinary system (As₂Te₃)_x(Tl₂Se)_1−x both in the glass and liquid states. The effect of the addition of excess Tl has also been examined. It has been found that the activation energy of electronic conduction is closely related to the average atomization energy of these materials.     

Growth and structure of photosensitive Pb1−x Mn x Te(Ga) epitaxial films

The growth and structure of (1-1.5)-μm-thick Pb_1?x Mn _x Te(Ga)(x = 0.06) films with 0.4?0.9 at % of gallium, grown on BaF₂(111) and Pb_1?x Sn _x Te (x = 0.2) (100) substrates by molecular beam epitaxy, have been investigated. It is established that the films are crystallized into an fcc structure, and their growth planes are (111) and (100), according to the substrate orientation. The optimal conditions for obtaining high-resistivity photosensitive p-and n-type films with a perfect crystal structure (W _1/2 = 80″?100″) have been determined.     

Properties of high nitrogen content mixed alkali earth oxynitride glasses (AExCa1−x)1.2(1)SiO1.9(1)N0.86(6), AE = Mg,Sr, Ba

Mixed alkali earth element containing high nitrogen content oxynitride glasses (Ca_1?xAE_x)_1.2(1)SiO_1.9(1)N_0.86(6), with AE = Mg, Sr, Ba, x ≤ 0.30 for Mg and x ≤ 0.46 for Sr and Ba, and nominally constant (Ca/AE):Si:O:N ratios were prepared in order to investigate the compositional dependencies of physical properties on alkali earth element composition. The glasses were prepared by melting mixtures of AEH₂, CaH₂, SiO₂ and Si₃N₄ powders in nitrogen atmosphere at 1600–1700 °C and characterized by X-ray powder diffraction and scanning and transmission electron microscopy. Cation and anion glass compositions were determined by respectively energy dispersive X-ray analysis and combustion analysis. The determined physical properties were density, glass transition temperature, Vickers hardness, and refractive index. The physical properties were found to vary linearly with the degree of substitution of Ca by the AE elements. The density of the glasses increases substantially upon substitution by Sr and Ba, up to 3.99 g/cm³. Glass transition temperatures are found to be higher for Mg and Sr substituted glasses, ca. 900 °C, in comparison with Ba substituted glasses, ca. 850 °C. The hardness increases upon substitution by Mg, up to 12.2 GPa at x = 0.46, and decreases upon substitution by Sr and Ba. The refractive index increases upon substitution by Sr and Ba, up to 1.97 for Ba at x = 0.46, and decreases upon substitution by Mg. The transparency of the glasses was found to increase upon increasing substitution by Mg and completely transparent glasses were obtained for x = 0.24.     

Selective dissolution of Agx(As0.33S0.67−ySey)100−x chalcogenide thin films

Thin films of As₃₃S₆₇, As₃₃S_33.5Se_33.5 and As₃₃Se₆₇ prepared by vacuum thermal evaporation were selectively etched in alkaline organic solutions of amines i.e. 1,2-diaminopropane, morpholine, aminoethanol, cyclohexylamine, hexylamine, butylamine and propylamine. Dissolution rates v, resolution coefficients γ and surface quality are discussed and compared to recently published results of etching process in inorganic solutions of NaOH, Na₂S and (NH₄)₂S. The resolution coefficients achieved in amine based solutions are by the order of magnitude higher than ones in inorganic etchants. Etching in organic solutions showed increase of the resolution coefficient and decrease of dissolution rate of exposed and unexposed film in the sequence of propylamine, butylamine, hexylamine and cyclohexylamine solution. The role of different type of amine on dissolution rate and resolution coefficient is discussed. The dissolution parameter γ is getting worse in the same type of solvent with increasing content of Se. The dissolution mechanism and relation between photo-structural change and dissolution behavior of films are proposed. New results of negative selective etching of Ag_x(As_0.33Se_0.67)_100?x in NaCN are presented and compared with selective etching curves of recently published Ag_x(As_0.33S_0.67)_100?x and Ag_x(As_0.33S_0.335Se_0.335)_100?x thin films. Potential application is shown in fabrication of ‘microlenses like’ motive into the Ag–As₃₃S₆₇ thin film.     

Structural behavior of CuxZr100−x metallic glass (x = 35−70)

The structural behavior of rapidly quenched amorphous Cu_xZr_100?x alloys was investigated in a wide composition range between 35 and 70 at.% Cu content. High-energy X-ray diffraction patterns, atomic pair correlation functions, mass density and the thermal stability behavior of the alloys all exhibit monotonic changes with composition. Partial pair correlation functions were determined assuming that they remain unchanged in the different amorphous Cu_xZr_100?x alloys and only the weight fractions become altered with changes in composition. The experimental results can be well described by a solid solution-like replacement of Cu and Zr atoms in the whole composition range. No indications are observed neither for the existence of a special atomic arrangement at a particular chemical composition nor for the presence of phase separation in the glassy state of the binary Cu–Zr system.     

A Spin-Charge Separation Hypothesis Based on the Structure of the Salts (TMTSF)2 × (X=PF− 6, ASF− 6)

A detailed study of the three-dimensional structure of (TMTSF)₂AsF₆ isomorphous to the PF₆ and ClO₄ salts) has led to the conclusion that these salts are pseudo two-dimensional, that there are strong interactions between certain selenium atoms in specific ways (clustering) and that there is a periodic lattice of anions. These anion sheets could stabilize partial separation of positive charges and unpaired electrons (spins). This separation can be used to formulate an hypothesis to explain the apparent absence of CDW's in these salts.     

Structure of (meso-5,10,15,20-tetraphenylporphyrinato) dichlorophosphorus(V) chloride, [P(tpp)Cl2]+Cl−

The title compound [P(tpp)Cl₂]⁺Cl^– crystallizes in the space group P2₁/n witha=10.701(2),b=24.860(2),c=14.799(2), =94.24(2)°,Z=4. The phosphorus atom has an octahedral coordination geometry formed by the four nitrogen atoms (Np) of the porphyrinato group and the two chloride ions. The average phosphorus-chloride distance is 2.150(1) Å, with phosphorus situated 0.006 Å below the porphyrin ring.     

Optical properties and structure of amorphous films Agx(As0.33S0.67−ySey)100−x

As₃₃S_67−ySe_y, where y = 0, 16.75, 33.5, 50.25 and 67, amorphous thin films were prepared by a vacuum thermal evaporation technique. The films with known silver concentrations and good optical quality were prepared by thermal vacuum evaporation of a silver film on the top of As₃₃S_100−ySe_y films with sequential step-by-step optically- and thermally-induced diffusion and dissolution (OIDD) of silver. The range of silver content was x = 0–25 at.%. The kinetics of OIDD of silver were measured optically by monitoring the change of thickness of the undoped part of the chalcogenide during broadband illumination. Compositions of the reaction products have been determined by scanning electron microscope with energy-dispersive X-ray microanalyser EDS. Optical properties $(T\text{,}n\text{,}{E}_{\text{g}}^{\text{opt}})$ of thin films were measured and/or calculated by the Swanepoel method [R. Swanepoel, J. Phys. E: Sci. Instrum. 16 (1983) 1214]. The refractive index increase with increasing silver and selenium concentration has been shown. The difference of the refractive index (Δn) between undoped and silver doped films was ∼0.4 and between As₃₃S₆₇ and As₃₃Se₆₇ was films ∼0.42. Non-linear indices of refraction were estimated according to Tichy’s formula [H. Ticha, L. Tichy, J. Optoel, Adv. Mat. 4 (2002) 381]. The values of non-linear refractive index grew with increasing silver and selenium content. The difference of optical bandgap, $\mathrm{\Delta }{E}_{\text{g}}^{\text{opt}}$, between undoped As₃₃S₆₇ and fully doped films with Ag and Se was ∼1 eV. Raman spectroscopy showed a decrease in S–S or Se–Se bonds with increasing silver content.