Growth kinetics and boron doping of very high Ge content SiGe for source/drain engineering

We have studied the in-situ boron doping of high Ge content Si_1?xGe_x layers (x=0.3, 0.4 and 0.5). These layers have been grown at low pressure (20 Torr) and low temperature (600–650 °C) with a heavily chlorinated chemistry on blanket Si(0 0 1) substrates. Such a chemistry yields a full selectivity versus SiO₂ (isolation) and Si₃N₄ (sidewall spacers) on patterned wafers with gate stacks. We have quantified the impact of the diborane flow on the SiGe layer crystalline quality, its resistivity, the SiGe:B growth rate and the apparent Ge concentration. Resistivity values lower than 1 mΩ cm are easily achieved, all the more so for high Ge content layers. The SiGe growth rate increases and the apparent Ge concentration (from X-ray diffraction) decreases as the diborane flow increases. B atoms (much smaller than Si or Ge) indeed partially compensate the compressive strain in the SiGe:B layers. We have also probed the in-situ boron and phosphorus doping of Si at 750 °C, 20 Torr with a heavily chlorinated chemistry. The B ions concentration increases linearly with the diborane flow, then saturates at a value close to 4×10¹⁹ cm^?3. By contrast, the P ions concentration increases sub-linearly with the phosphine flow, with a maximum value close to 9×10¹⁸ cm^?3. Adding diborane (phosphine) to the gaseous mixture leads to a sharp increase (decrease) of the Si:B (the Si:P) growth rates, which has to be taken into account in device layers. All the know-how acquired will be most handy for the formation of in-situ doped recessed or raised sources and drains in metal-oxide semiconductor devices.     

Optical investigations of germanium nanoclusters – Rich SiO2 layers produced by ion beam synthesis

In this work, refractive index and extinction coefficient spectra of germanium nanoclusters – rich SiO₂ layers have been determined using variable angle spectroscopic ellipsometry (VASE) in the 250–1000 nm range. The samples were produced by Ge⁺ ion implantation into SiO₂ layers on Si substrates and subsequent annealing at temperatures from 700 to 1100 °C. It is known from previous investigations of similar samples that the Ge nanoclusterization process starts already at 800 °C and spherical Ge nanocrystallites 5–8 nm in diameter are observed in the SiO₂ layers after annealing for 1 h at even higher temperatures of 1000–1100 °C. Rutherford backscattering spectrometry (RBS) was employed to measure the Ge atom concentration depth profiles in the studied samples. The RBS results helped us choose realistic models for the VASE analysis which were necessary for a proper interpretation of the VASE data. It has been found that the refraction index value for the SiO₂/Si layer increases after Ge implantation. This effect can be explained by a defect-dependent compaction of ion-bombarded layers. A band’s tail in the extinction coefficient spectra for all the samples is observed which originates from a strong ultraviolet absorption band at 6.8 eV due to a Germanium Oxygen-Deficiency Center (GeODC) and/or a Ge-E’center in SiO₂. The annealing process results in the emergence of weaker extinction coefficient bands in the 400–600 nm region, associated with direct band-to-band transitions in Ge nanostructures. Transformation of these bands, including their blue-shift with the increasing annealing temperature could be explained via a quantum-confinement mechanism, by size and structural changes in Ge nanostructures.     

Effect of OH-content on thermal and chemical properties of SnOP2O5 glasses

Glasses with 55–60 mol% SnO and 40–45 mol% P₂O₅ have shown extremely large differences in the chemical and thermal properties depending on the temperature at which they were melted. Glasses prepared at low melting temperature, 450–550 °C, had low T_g, 150–200 °C, and low chemical stability. Glasses prepared at high melting temperature, 800–1200 °C, had much higher T_g, 250–300 °C, and much higher chemical stability. No significant differences were found by ¹¹⁹Sn Mössbauer and ³¹P Nuclear Magnetic Resonance spectroscopy. Large differences in the OH-content could be detected as the reason by infrared absorption spectroscopy, thermal analyses, and ¹H Nuclear Magnetic Resonance spectroscopy. In samples with low T_g, a broad OH – vibration band around 3000 nm with an absorption intensity >20 cm^?1, bands at 2140 nm with intensity ～5 cm^?1, at 2038 nm with intensity ～2.7 cm^?1, and at 1564 nm with intensity ～0.4 cm^?1 were measured. These samples have shown a mass loss of 3–4 wt% by thermal gravimetric analyses under argon in the temperature range 400–1000 °C. No mass loss and only one broad OH-band with a maximum at 3150 nm and low absorption intensity <4 cm^?1 could be detected in samples melted at high temperature, 1000–1200 °C, which have much higher T_g, ～300 °C, and much higher chemical stability.     

GeO2 based high k dielectric material synthesized by sol–gel process

Recently, there has been lot of research on new high dielectric constant (high k) materials for use in future generations of ultra-large scale integrated circuits (ULSI). There are number of requirements for the new high k materials, such as high dielectric constant, thermal stability (400 °C or higher), high mechanical strength, and good adhesion to neighboring layers. Keeping in view the properties required for the replacement of existing SiO₂ dielectrics, new high k dielectric material based on GeO₂ has been synthesized. Polycrystalline GeO₂ thin films have been deposited by simple, and cost effective sol–gel spin coating process. The obtained xerogel films of germanium oxide have been annealed at 400 °C, 600 °C and 800 °C for 3 h in argon atmosphere. Elemental composition, morphology, and phase analysis have been measured by employing X-ray photoelectron spectroscopy, scanning electron microscopy, and X-ray diffraction techniques, respectively. The formation of the hexagonal GeO₂ phase at and above 400 °C has been reported. The composition of the annealed films have been measured and found to be 68 at.% of O, 32 at.% of Ge for GeO₂, which are close to the stoichiometry of the GeO₂.     

Superior structural and electronic properties for amorphous silicon–germanium alloys deposited by a low temperature hot wire chemical vapor deposition process

Very good electronic properties of hot-wire CVD a-Si,Ge:H alloys have been established by junction capacitance methods. The samples were deposited using a tantalum filament maintained at about 1800 °C instead of the usual 2000 °C tungsten filament process. Urbach energies below 45 meV were found, as well as annealed defect densities below 10¹⁶ cm⁻³, for Ge fractions up to 30 at.%. However, samples with 10¹⁹ cm⁻³ levels of oxygen exhibited much broader Urbach energies and higher defect densities. Light induced degradation was examined in detail for one a-Si,Ge:H alloy sample and compared to the behavior of PECVD grown a-Si:H alloys of similar optical gap.     

Fabrication and characterization of transparent conductive ZnO:Al thin films prepared by direct current magnetron sputtering with highly conductive ZnO(ZnAl2O4) ceramic target

Using a highly conductive ZnO(ZnAl₂O₄) ceramic target, c-axis-oriented transparent conductive ZnO:Al₂O₃ (ZAO) thin films were prepared on glass sheet substrates by direct current planar magnetron sputtering. The structural, electrical and optical properties of the films (deposited at different temperatures and annealed at 400°C in vacuum) were characterized with several techniques. The experimental results show that the electrical resistivity of films deposited at 320°C is 2.67×10⁻⁴ Ω cm and can be further reduced to as low as 1.5×10⁻⁴ Ω cm by annealing at 400°C for 2 h in a vacuum pressure of 10⁻⁵ Torr. ZAO thin films deposited at room temperature have flaky crystallites with an average grain size of ∼100 nm; however those deposited at 320°C have tetrahedron grains with an average grain size of ∼150 nm. By increasing the deposition temperature or the post-deposition vacuum annealing, the carrier concentration of ZAO thin films increases, and the absorption edge in the transmission spectra shifts toward the shorter wavelength side (blue shift).     

Phase evolution on heat treatment of sodium silicate water glass

Heat treatment of sodium silicate water glass of the nominal composition Na₂O/SiO₂ = 1:3 was carried out from 100 °C up to 800 °C and the advancement of the resulting phases was followed up by powder X-ray diffraction, scanning electron microscopy and thermogravimetry along with differential thermal analysis. The water glass, initially being an amorphous solid, starts to form crystals of β-Na₂Si₂O₅ at about 400 °C and crystallizes the SiO₂ modification cristobalite at about 600 °C that coexists along with β-Na₂Si₂O₅ up to 700 °C. At 750 °C Na₆Si₈O₁₉ appears as a separate phase and beyond 800 °C, the system turns into a liquid.     

Structure and photoelectrical properties of SiO2/Si/SiO2 single quantum wells prepared under ultrahigh vacuum conditions

SiO₂/Si/SiO₂ single quantum wells (QWs) were prepared under ultrahigh vacuum conditions in order to study their structural, chemical and photoelectrical properties with respect to a possible application in photovoltaic devices. Amorphous silicon (a-Si) layers (thickness <10 nm) were deposited onto quartz glass (SiO₂) substrates and subsequently oxidized with neutral atomic oxygen at moderate temperatures of 600 °C. Under these conditions, the formation of suboxides is mostly suppressed and abrupt Si/SiO₂ interfaces are obtained. Crystallization of a-Si QWs requires temperatures as high as 1000 °C resulting in a nanocrystalline structure with a small amorphous fraction. The spectral dependence of the internal quantum efficiency of photoconductivity correlates well with the nanocrystalline structure and yields mobility lifetime products of <10^?7 cm² V^?1. This rather low value points towards a strong influence of Si/SiO₂ interface states on the carrier mobility and the carrier lifetime in Si QWs. Electronic passivation of interface states by subsequent hydrogen treatment in forming gas enhances the internal quantum efficiency by nearly one order of magnitude.     

Fabrication and ionic conductivity of amorphous Li–Al–Ti–P–O thin film

Li⁺ ion conducting Li–Al–Ti–P–O thin films were fabricated on ITO-glass substrates at various temperatures from 25 to 400 °C by RF magnetron sputtering method. When the substrate temperature is higher than 300 °C, severe destruction of ITO films were confirmed by XRD (X-ray diffraction) and the abrupt transformation of one semi-circle into two semi-circles on the impedance spectra. These as-deposited Li–Al–Ti–P–O solid state electrolyte thin films have an amorphous structure confirmed by XRD and a single semicircle on the impedance spectra. Good transmission higher than 80% in the visible light range of these electrolyte thin films can fulfill the demand of electro-chromic devices. Field emission scanning electron microscopy and atomic force microscopy showed the denser, smoother and more uniform film structure with the enhanced substrate temperature. Measurements of impedance spectra indicate that the gradual increased conductivity of these Li–Al–Ti–P–O thin films with the elevation of substrate temperature from room temperature to 300 °C is originated from the increase of the pre-exponential factor (σ₀). The largest Li-ion conductivity can come to 2.46 × 10^? 5 S cm^? 1. This inorganic solid lithium ion conductor film will have a potential application as an electrolyte layer in the field such as lithium batteries or all-solid-state EC devices.     

Intersubband transition at 1.55 μm in AlN/GaN multiple quantum wells by metal organic vapor phase epitaxy using the pulse injection method at 770 °C

Intersubband transition (ISBT) at 1.55 μm in AlN/GaN multi quantum wells (MQWs) was realized by metal organic vapor phase epitaxy (MOVPE) using the pulse injection (PI) method to grow GaN well layers at 770 °C. It was shown that a main factor for shifting ISBT wavelength to shorter region to cover 1.55 μm and improving ISBT properties of MQWs is the growth temperature of MQWs. Best structural and ISBT properties are observed at low growth temperature of 770 °C in this study. Carbon incorporation level in GaN layer grown by the PI method (PI-GaN) showed one order smaller value compared with that by the conventional continuous method. Moreover, further decrease in growth temperature to 770 °C did not show significant increase in carbon incorporation in PI-GaN layer. It clearly indicates that the PI method is very effective in reducing carbon concentration in GaN layer, especially at low temperature region. The low carbon concentration of 4×10¹⁸ cm^?3 released by the PI method was indispensable for realizing enough carrier concentration of 1.6×10¹⁹ cm^?3 to achieve strong ISBT at 1.55 μm.     

Growth improvement and quality evaluation of ZnGeP2 single crystals using vertical Bridgman method

ZnGeP₂ single crystals were grown using two-temperature zone vertical Bridgman method. The effect of crucible material, crucible shape, and cooling program on the growth of the ZnGeP₂ crystal was investigated. The qualities of the crystals were evaluated by high resolution X-ray diffraction, X-ray fluorescence spectrometry, and IR transmittance spectra. The results show that the full width at half maximum of the rocking curves for (200), (004), and (220) faces are 45″, 37″, and 54″, respectively. The concentration of the P, Zn and Ge are almost homogeneous along the growth axis, but P and Zn are slightly deficient compared with Ge in the as-grown ZnGeP₂ crystals. The increase of annealing temperature from 600 °C to 700 °C has little effect on the reduction of the absorption losses in ZnGeP₂ powders, and has negative effect on the reduction of the absorption losses in ZnP₂ powders. Annealed in ZnP₂ powders at 600 °C for 300 h, the optical absorption loss at 2.05 μm reduce by 37%, compared with that of 27% reduction annealed in ZnGeP₂ powders.     

Low-temperature growth of high-quality ZnO layers by surfactant-mediated molecular-beam epitaxy

High-quality ZnO layers are grown on Zn-polar ZnO substrates by surfactant-mediated plasma-assisted molecular-beam epitaxy (P-MBE) using atomic hydrogen as a surfactant. Careful investigation with atomic force microscopy (AFM) and reflection high-energy electron diffraction (RHEED) reveals that two-dimensional growth is preserved down to 400 °C by irradiating atomic hydrogen during growth, while the low-temperature limit of two-dimensional growth is 600 °C without atomic hydrogen irradiation. The crystal quality of ZnO layers grown at 400 °C by surfactant-mediated MBE is evaluated to be the same as those grown at 600 °C by conventional MBE in terms of X-ray diffraction and photoluminescence properties.     

Self-aggregated Si quantum dots in amorphous Si-rich SiC

Amorphous silicon quantum dots (Si-QDs) self-aggregated in silicon-rich silicon carbide are synthesized by growing with plasma-enhanced chemical vapor deposition on (100)-oriented Si substrate. Under the environment of Argon (Ar)-diluted Silane (SiH₄) and pure methane (CH₄), the substrate temperature and RF power are set as 350 °C and 120 W, respectively, to provide the Si-rich SiC with changing fluence ratio (R = [CH₄ ]/[SiH₄] + [CH₄]). By tuning the fluence ratio from 50% to 70%, the composition ratio x of Si-rich Si_1 ? xC_x film is varied from 0.27 to 0.34 as characterized by X-ray photoelectron spectroscopy (XPS), which reveals the component of Si_2p decreasing from 66.3 to 59.5%, and the component of C_1s increasing from 23.9% to 31% to confirm the formation of Si-rich SiC matrix. Annealing of the SiC sample from 650 °C to 1050 °C at 200 °C increment for 30 min induces the very tiny shift on the wavenumber of the crystalline Si (c-Si) related peak due to the precipitation of Si-QDs within the SiC matrix, and the Raman scattering spectra indicate a broadened Raman peak ranging from 410 to 520 cm^? 1 related to the amorphous Si accompanied with the significant enhancement for SiC bond related peak at 980 cm^? 1. From the high resolution transmission electron microscopy images, the critical temperature for Si-QD precipitation is found to be 850 °C. The self-assembly of the crystallized Si-QDs with the size of 3 ± 0.5 nm and the volume density of (3 ± 1) × 10¹⁸ (#/cm³) in Si-rich SiC film with R = 70% are observed after annealing at higher temperature.     

Platinum-catalyst-assisted metalorganic vapor phase epitaxy of InN

This paper reports the first attempt of the Pt-catalyst-assisted MOVPE growth of InN. In order to enhance NH₃ decomposition at a relatively low growth temperature (～550 °C), Pt is used as a catalyst. The catalyst is installed in the NH₃ introduction tube in the MOVPE reactor and the tube is located just above the susceptor to be heated. Compared with InN films grown without the catalyst, the samples grown with Pt catalyst show improved electrical properties; a carrier concentration in the order of 10¹⁸ cm^?3 and a Hall mobility as high as 1350 cm²/Vs are obtained. The crystalline quality is also improved by employing the catalyst and a tilt fluctuation as low as 8.6 arcmin is obtained for a sample grown on a GaN/sapphire template. It is confirmed that for InN films grown at 550 °C with Pt catalyst, the electrical and crystallographic properties are also improved with increase in thickness. These results indicate that the growth at around 550 °C with the Pt catalyst is performed under the circumstances where NH₃ is effectively decomposed, whereas the deterioration of InN during growth is significantly suppressed.     

Correlation between the method of preparation and the properties of the sol–gel HfO2 thin films

This work describes the preparation of HfO₂ thin films by the sol–gel method, starting with different precursors such as hafnium ethoxide, hafnium 2,4-pentadionate and hafnium chloride. From the solution prepared as mentioned above, thin films on silicon wafer substrates have been realized by ‘dip-coating’ with a pulling out speed of 5 cm min^?1. The films densification was achieved by thermal treatment for 10 min at 100 °C and 30 min at 450 °C or 600 °C, with a heating rate of 1 °C min^?1. The structural and optical properties of the films are determined employing spectroellipsometric (SE) measurements in the visible range (0.4–0.7 μm), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The main objective of this paper was to establish a correlation between the method of preparation (precursor, annealing temperature) and the properties of the obtained films. The samples prepared from pentadionate and ethoxide precursors are homogenous and uniform in thickness. The samples prepared starting from chloride precursor are thicker and proved to be less uniform in thickness. Higher non-uniformity develops in multi-deposition films or in crystallized films. A nano-porosity is present in the quasi-amorphous films as well in the crystallized one. For the samples deposited on silicon wafer, the thermal treatment induced the formation of a SiO₂ layer at the coating–substrate interface.     

Effect of annealing temperature on the optical and electrical properties of aluminum doped ZnO films

Aluminum doped ZnO thin films were successfully deposited on the silicon substrates by spin coating method. The effects of an annealing temperature on electrical and optical properties were investigated for 1.5 at.% of aluminum. Refractive index profile has been obtained for the film annealed at 350 °C using ellipsometry and it has shown minimum refractive index of 1.95 and maximum value of 2.1. Thickness profile shows quite good uniformity of the film having minimum thickness value of 30.1 nm and maximum value of 34.5 nm. Maximum conductivity value obtained was 4.63 Ω^?1-cm^?1 for the film annealed at 350 °C. Maximum carrier density of 2.20 × 10¹⁷ cm^?3 was deduced from the Hall measurement and Fourier transform infrared spectroscopy clearly reveals major peak at 407 cm^?1 in the spectra associated with the ZnO bond.     

Amorphous tungsten-doped In2O3 transparent conductive films deposited at room temperature from metallic target

Amorphous tungsten-doped In₂O₃ (IWO) films were deposited from a metallic target by dc magnetron sputtering at room temperature. Both oxygen partial pressure and sputtering power have significant effects on the electrical and optical properties of the films. The as-deposited IWO films with the optimum resistivity of 5.8 × 10^?4 Ω·cm and the average optical transmittance of 92.3% from 400 to 700 nm were obtained at a W content of 1 wt%. The average transmittance in the near infrared region (700–2500 nm) is 84.6–92.8% for amorphous IWO prepared under varied oxygen partial pressure. The mobility of the IWO films reaches its highest value of 30.3 cm² V^?1 s^?1 with the carrier concentration of 1.6 × 10²⁰ cm^?3, confirming their potential application as transparent conductive oxide films in various flexible devices.     

Improving the performance of amorphous and crystalline silicon heterojunction solar cells by monitoring surface passivation

The influence of thermal annealing on the crystalline silicon surface passivating properties of selected amorphous silicon containing layer stacks (including intrinsic and doped films), as well as the correlation with silicon heterojunction solar cell performance has been investigated. All samples have been isochronally annealed for 1 h in an N₂ ambient at temperatures between 150 °C and 300 °C in incremental steps of 15 °C. For intrinsic films and intrinsic/n-type stacks, an improvement in passivation quality is observed up to 255 °C and 270 °C, respectively, and a deterioration at higher temperatures. For intrinsic/n-type a-Si:H layer stacks, a maximum minority carrier lifetime of 13.3 ms at an injection level of 10¹⁵ cm^? 3 has been measured. In contrast, for intrinsic/p-type a-Si:H layer stacks, a deterioration in passivation is observed upon annealing over the whole temperature range. Comparing the lifetime values and trends for the different layer stacks to the performance of the corresponding cells, it is inferred that the intrinsic/p-layer stack is limiting device performance. Furthermore, thermal annealing of p-type layers should be avoided entirely. We therefore propose an adapted processing sequence, leading to a substantial improvement in efficiency to 16.7%, well above the efficiency of 15.8% obtained with the ‘standard’ processing sequence.     

Smooth titania nanotubes: Self-organization and stabilization of anatase phase

We present transmission electron microscopy and Raman scattering measurements showing that niobium inhibits the processes of nucleation and growth of anatase crystallites in the initial amorphous titania nanotubes and thus shifts the temperature of the complete amorphous-to-anatase phase transition to higher values up to 550 °C. Niobium dopants stabilize the anatase phase in titania nanotubes up to 650 °C. The size of anatase crystallites can reach 30–50 nm. Excess niobium atoms which are pulled off from the volume of anatase crystallite form polymeric or monomeric Ti–O–NbO groups at the interface area. Slight shift and broadening of E_g (144 cm^?1), A_1g (515 cm^?1) and E_g (630 cm^?1) modes in Raman spectra can be explained by niobium insertion into the anatase structure.     

Fast ion conducting phosphate glasses and glass ceramic composites: Promising materials for solid state batteries

Fast ion conducting (FIC) phosphate glasses and glass ceramic composites have gained considerable importance due to their potential applications in the fabrication of solid-state batteries and other electrochemical devices. We, therefore, present an overview on various types of FIC glasses and glass ceramic composites. Silver phosphate glasses doped with different weight percent of lithium chloride (1, 5, 10 and 15 wt.%) were synthesized by melt quenching technique. The Ag₂O–P₂O₅–(15 wt.%) LiCl glass exhibited the maximum electrical conductivity (σ = 8.91 × 10^? 5 S cm^? 1 at room temperature and 4.16 × 10^? 3 S cm^? 1 at 200 °C). Using this glass as an amorphous host material, glass–ceramic composites of Ag₂O–P₂O₅–(15 wt.%) LiCl:xAl₂O₃ (x = 5–50 wt.%) were prepared. The ionic transference number, electrical conductivity, ionic mobility and carrier ion concentration of the synthesized samples were measured. Ag₂O–P₂O₅–(15 wt.%) LiCl:(25 wt.%) Al₂O₃ composite system exhibited the maximum σ value (σ = 3.32 × 10^? 4 S cm^? 1 at room temperature and 2.88 × 10^? 2 S cm^? 1 at 200 °C ). Solid‐state batteries using undoped Ag₂O–P₂O₅ glass, Ag₂O–P₂O₅–(15 wt.%) LiCl glass and glass ceramic composite containing 25 wt.% Al₂O₃ as electrolytes were fabricated. The open circuit voltage (OCV) values and discharge time of these cells were measured and compared. It is found that the glass ceramic composites show enhanced ionic conduction, better OCV value and discharge characteristics.