Intersubband transition at 1.55 μm in AlN/GaN multiple quantum wells by metal organic vapor phase epitaxy using the pulse injection method at 770 °C

Intersubband transition (ISBT) at 1.55 μm in AlN/GaN multi quantum wells (MQWs) was realized by metal organic vapor phase epitaxy (MOVPE) using the pulse injection (PI) method to grow GaN well layers at 770 °C. It was shown that a main factor for shifting ISBT wavelength to shorter region to cover 1.55 μm and improving ISBT properties of MQWs is the growth temperature of MQWs. Best structural and ISBT properties are observed at low growth temperature of 770 °C in this study. Carbon incorporation level in GaN layer grown by the PI method (PI-GaN) showed one order smaller value compared with that by the conventional continuous method. Moreover, further decrease in growth temperature to 770 °C did not show significant increase in carbon incorporation in PI-GaN layer. It clearly indicates that the PI method is very effective in reducing carbon concentration in GaN layer, especially at low temperature region. The low carbon concentration of 4×10¹⁸ cm^?3 released by the PI method was indispensable for realizing enough carrier concentration of 1.6×10¹⁹ cm^?3 to achieve strong ISBT at 1.55 μm.     

The growth of epitaxial aluminium on As containing compound semiconductors

The growth of epitaxial aluminium on different (1 0 0) oriented compound semiconductors grown using the molecular beam epitaxy technique have been studied. After deposition of the first complete adlayer between the aluminium and the GaAs surface as evidenced by in situ reflection high electron energy diffraction (RHEED), ex situ atomic force microscopy (AFM) images agree that subsequent aluminium deposition is via a 3D nucleated growth mode. RHEED observations during continued deposition of epitaxial aluminium indicate a 2D growth mode dominated by the (1 0 0) orientation. AFM images of the surface of the aluminium reveal that the surface morphology consists of a plateau–valley structure, while transmission electron microscopy characterisation reveals that the aluminium is a (1 0 0) oriented single crystal. For growth of epitaxial aluminium on different (1 0 0) compound semiconductors the resultant hillock–valley morphology of the aluminium is remarkably similar regardless of the underlying semiconductor. There is no apparent difference between the aluminium growth on GaAs and Al_0.6Ga_0.4As indicating that the aluminium content of the semiconductor is having no effect on the growth of the aluminium, whereas there can be a difference in the hillock widths for aluminium grown on In_0.53Al_0.47As and In_0.55Ga_0.45As. The dominant orientation that the aluminium recrystallises to, appears to be determined by the strain between the aluminium 3D nucleates and the underlying semiconductor with (1 0 0) oriented aluminium for tensile strain (growth on GaAs and AlGaAs) and (1 1 0) oriented aluminium for compressive strain (growth on InAlAs and InGaAs).     

Photo-crystallization in a-Se imaging targets: Raman studies of competing effects

Photo-induced crystallization of a-Se is investigated by Raman spectroscopy as a function of temperature (250–340 K) and exposure time in thin-film structures used as targets in high-gain avalanche rushing photoconductor (HARP) video cameras. The Stokes-to-Antistokes ratio is monitored to obtain the local temperature T_loc at the laser spot; fluxes (632 nm) of 17 and 10 W/cm² are used. We find a rich temperature behavior that reflects the competition of changes in viscosity and strain, and defines four distinct regimes. No photo-crystallization is seen for T_loc below 260 K, nor in a 15 K range around T_g ～ 310 K. For T_loc in the regime 260–302 K the initial rate of crystal growth after onset of photo-crystallization is temperature independent, whereas for T_loc > 318 K the growth rate is thermally enhanced. Our results are in qualitative accord with a theory by Stephens treating the effects of local strain on the secondary growth of crystalline nuclei in a-Se. We conclude that the observed growth rate between 260 and 302 K is driven by local strain, and that relaxation of this strain near T_g suppresses crystal growth until thermally assisted processes accelerate the photo-crystallization at higher temperatures.     

Growth temperature induced effects in non-polar a-plane GaN on r-plane sapphire substrate by RF-MBE

Non-polar a-plane GaN films were grown on an r-plane sapphire substrate by plasma assisted molecular beam epitaxy (PAMBE). The effect of growth temperature on structural, morphological and optical properties has been studied. The growth of non-polar a-plane (1 1 ?2 0) orientation of the GaN epilayers were confirmed by high resolution X-ray diffraction (HRXRD) study. The X-ray rocking curve (XRC) full width at half maximum of the (1 1 ?2 0) reflection shows in-plane anisotropic behavior and found to decrease with increase in growth temperature. The atomic force micrograph (AFM) shows island-like growth for the film grown at a lower temperature. Surface roughness has been decreased with increase in growth temperature. Room temperature photoluminescence shows near band edge emission at 3.434–3.442 eV. The film grown at 800 °C shows emission at 2.2 eV, which is attributed to yellow luminescence along with near band edge emission.     

Low-temperature growth of high-quality ZnO layers by surfactant-mediated molecular-beam epitaxy

High-quality ZnO layers are grown on Zn-polar ZnO substrates by surfactant-mediated plasma-assisted molecular-beam epitaxy (P-MBE) using atomic hydrogen as a surfactant. Careful investigation with atomic force microscopy (AFM) and reflection high-energy electron diffraction (RHEED) reveals that two-dimensional growth is preserved down to 400 °C by irradiating atomic hydrogen during growth, while the low-temperature limit of two-dimensional growth is 600 °C without atomic hydrogen irradiation. The crystal quality of ZnO layers grown at 400 °C by surfactant-mediated MBE is evaluated to be the same as those grown at 600 °C by conventional MBE in terms of X-ray diffraction and photoluminescence properties.     

Growth of thick,continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition

We report on the growth of thick GaN epilayers on 4-in. Si(1 1 1) substrates by metalorganic chemical vapor deposition. Using intercalated AlN layers that contribute to counterbalance the tensile strain induced by the thermal mismatch between gallium nitride and the silicon substrate, up to 6.7 μm thick crack-free group III-nitride layers have been grown. Root mean-squares surface roughness of 0.5 nm, threading dislocation densities of 1.1×10⁹ cm^?2, as well as X-ray diffraction (XRD) full widths at half-maximum (FWHM) of 406 arcsec for the GaN(0 0 2) and of 1148 arcsec for the GaN(3 0 2) reflection have been measured. The donor bound exciton has a low-temperature photoluminescence line width of 12 meV. The correlation between the threading dislocation density and XRD FWHM, as well as the correlation between the wafer curvature and the GaN in-plane stress is discussed. An increase of the tensile stress is observed upon n-type doping of GaN by silicon.     

Influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells grown by MOCVD

We have investigated the influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells (MQWs) with an indium composition around 20%. The samples with five-pairs InGaN/GaN MQWs were grown on sapphire substrates by metalorganic chemical vapor deposition. Photoluminescence spectra at 8 K showed that the MQWs grown with a low amount of TEGa flow gave a strong single peak and a higher emission energy. High-resolution X-ray diffraction measurements showed a deterioration of the InGaN/GaN interfaces in the sample grown with the large TEGa flow. The luminescence thermal quenching characteristics suggested that more structural defects acting as non-radiative recombination centers formed in the MQWs when the TEGa flow increased. The results indicate that decreasing the TEGa flow help to build up a new growth balance during the growth of InGaN wells, leading to less structural defects, more homogeneous indium distribution and the abrupt MQWs interfaces.     

The preferential orientation of the directionally solidified Si–TaSi2 eutectic in situ composite

The Si–TaSi₂ eutectic in situ composite is a favorable field emission material due to relatively low work function, good electron conductivity, and three-dimensional array of Schottky junctions grown in the composite spontaneously. The preferential orientation during directional solidification is determined by the growth anisotropy. In order to obtain the preferential direction of the steady-state crystal growth, the transmission electron microscopy (TEM) is used for analysis. It is found that the preferential orientation of the Si-TaSi₂ eutectic in situ composite prepared by Czochralski (CZ) technique is [3 3¯ 2¯] Si∥[0 0 0 1] TaSi₂, (2 2 0)Si∥(2 2¯ 0 0) TaSi₂. Whereas the preferential orientation of the Si–TaSi₂ eutectic in situ composite prepared by electron beam floating zone melting (EBFZM) technique is [0 1¯ 1¯ ]] Si∥[0 0 0 1] TaSi₂,(0 1¯ 1) Si∥(0 1¯ 1 1)TaSi₂. The preferential directions of the Si-TaSi₂ eutectic in situ composites prepared by two kinds of crystal growth techniques are distinctly different from each other, which results from different solid–liquid interface temperatures on account of the different crystal growth conditions, e.g. different solidification rate, different temperature gradient, different solid–liquid interface curvature and different kinetic undercooling.     

Investigation of directional solidified Al–Ti alloy

Al–1 wt% Ti alloy was directionally solidified upwards under argon atmosphere under the two conditions; with different temperature gradients (G = 2.20–5.82 K/mm) at a constant growth rate (V = 8.30 μm/s) and with different growth rates (V = 8.30–498.60 μm/s) at a constant temperature gradient (G = 5.82 K/mm) in a Bridgman furnace. The dependence of characteristic microstructure parameters such as primary dendrite arm spacing (λ₁), secondary dendrite arm spacing (λ₂), dendrite tip radius (R) and mushy zone depth (d) on the velocity of crystal growth and the temperature gradient were determined by using a linear regression analysis. A detailed analysis of microstructure development with models of dendritic solidification and with previous similar experimental works on dendritic growth for binary alloys were also made.     

Crystal growth kinetics in cordierite and diopside glasses in wide temperature ranges

We measured and collected literature data for the crystal growth rate, u(T), of μ-cordierite (2MgO · 2Al₂O₃ · 5SiO₂) and diopside (CaO · MgO · 2SiO₂) in their isochemical glass forming melts. The data cover exceptionally wide temperature ranges, i.e. 800–1350 °C for cordierite and 750–1378 °C for diopside. The maximum of u(T) occurs at about 1250 °C for both systems. A smooth shoulder is observed around 970 °C for μ-cordierite. Based on measured and collected viscosity data, we fitted u(T) using standard crystal growth models. For diopside, the experimental u(T) fits well to the 2D surface nucleation model and also to the screw dislocation growth mechanism. However, the screw dislocation model yields parameters of more significant physical meaning. For cordierite, these two models also describe the experimental growth rates. However, the best fittings of u(T) including the observed shoulder, were attained for a combined mechanism, assuming that the melt/crystal interface growing from screw dislocations is additionally roughened by superimposed 2D surface nucleation at large undercoolings, starting at a temperature around the shoulder. The good fittings indicate that viscosity can be used to assess the transport mechanism that determines crystal growth in these two systems, from the melting point T_m down to about T_g, with no sign of a breakdown of the Stokes–Einstein/Eyring equation.     

Mechanisms controlling primary crystallisation of Ga20Te80 glasses

The kinetic study of the crystallisation process of Ga₂₀Te₈₀ glass from isothermal and continuous heating calorimetric data have been performed applying a recently developed procedure. The kinetic information was complemented with X-ray diffraction measurements. With this scope, three crystallisation patterns, with three-dimensional isotropic growth have been analysed: (i) site saturation and interface controlled growth. (ii) homogeneous nucleation with interface controlled growth and (iii) homogeneous nucleation with two simultaneous modes of crystal growth (interface- and diffusion-controlled). A complex model with two simultaneous modes of three-dimensional isotropic crystal growth with decreasing homogeneous nucleation and soft impingement has been applied for modelling primary crystallisation of the Ga₂₀Te₈₀ glass. The model goes beyond the isokinetic hypothesis when coupling isothermal and continuous heating kinetic data. The apparent activation energy E_a = (2.06 ± 0.03) eV/at obtained for the primary crystallisation of the phase Te is shown to correspond to an activation energy for nucleation E_I = (2.85 ± 0.03) eV/at and an interface controlled activation energy for growth E_u = (1.90 ± 0.03) eV/at at the crystallisation onset.     

Crystallization of NANOPERM-type amorphous alloys

In the present work, we have investigated progress of crystallization in the Fe_91?xMo₈Cu₁B_x (x = 12, 15, 17, 20) alloy as a function of annealing temperature. This material belongs to the family of the Fe–M–B–(Cu) alloys (transition metal M = Zr, Nb, Hf, Mo, …) called also NANOPERM. The alloy was found to contain small amounts (<5%) of bcc Fe(Mo) and Mo₂FeB₂ nanocrystallites (<2 nm) located on the surface of the ribbon-shaped samples already in the as-quenched state. Depending upon composition, the nanocrystallites are formed on the air and/or wheel side of the ribbon. They are characterized by atomic force microscopy, conversion electron Mössbauer spectroscopy, and by X-ray diffraction of synchrotron radiation. Fast detection (every 10 s) of the latter during continuous heating of as-quenched specimens enabled an in situ observation of the evolution of the crystallization. For x = 12, the crystallization starts earlier at the wheel side of the ribbon but its progress is more rapid at the opposite, i.e. air side.     

Water diffusion coefficient measurements in deposited silica coatings by the substrate curvature method

The diffusion of water in silica coatings deposited by evaporation and physical vapor deposition (sputtering) is studied using the substrate curvature measurement technique. The diffusion of water into the coatings induced a swelling, which in turn caused bending (curvature) of the silicon substrate. The curvature change was measured in situ during a humidity increase from 0% to 95% at room temperature. The diffusivity of water in the sputtered silica coating was measured to be 10 × 10^?12 cm²/s and achieved equilibrium in about 10 min. The diffusion of water in the evaporated silica coating achieved equilibrium in about 2 min. Because the coatings exhibited very short equilibration times, the impact of a non-instantaneous humidity change on the calculated diffusion coefficients was also examined.     

Effect of Mo element on the properties of Fe–Mo–P–C–B bulk metallic glasses

Bulk Fe_80?xMo_xP₁₀C_7.5B_2.5 (x = 5–10 at.%) metallic glasses are synthesized by copper mold casting, which have a critical diameter up to 3 mm, fracture strength over 3000 MPa, plastic strain up to 2.5% and saturation magnetization reaching 1.1 T. Results show that the glass forming ability and strength increase with increasing Mo content, while the plasticity and saturation magnetization do otherwise. These Mo content dependent properties are illuminated with the atomic interactions in the alloys that could be strengthened by suitable addition of Mo element. The effects of Mo on the properties of the alloys imply that proper Mo element should be chosen in designing Fe-based glassy alloys with desired properties.     

Uniformity improvement of selectively-grown InGaAs micro-discs on Si

Dislocation-free InGaAs micro-disks, having a diameter of approximately 5 μm and a thickness of approximately 0.2 μm, have been grown on Si(111) substrate patterned with SiO₂, with excellent uniformity in shape. This shape uniformity was dependent on the initial growth of InAs on Si windows. For the growth of well-controlled lateral islands, it is mandatory to cover the openings completely with a single-domain InAs crystal prior to the subsequent growth of InGaAs, the Ga content of which is essential for lateral growth. Moreover, the shape uniformity of InAs islands strongly affected the uniformity of the InGaAs islands' shape. On the basis of these observations, the diameter of Si openings was reduced to 1 μm to make it easier to fill the openings with InAs without failure. A two-step growth of InAs was devised to achieve void-less nucleation and lateral growth at the same time. It was also found that the recess at the boundary between Si and the SiO₂ mask played a vital role to limit the lateral size of InAs islands: when an InAs island hit that boundary, the lateral growth was suppressed and a stable {?110} facet emerged, and the growth seemed to wait for all the {?110} sidewalls to emerge. This mechanism compensated variation in the progress of InAs growth due to scattered timing of InAs nucleation. Therefore, for the purpose of improving the shape uniformity of InGaAs micro-disks, transition from InAs to InGaAs growth should be attempted after all the sidewalls are covered with {?110} facets and before vertical growth starts.     

The comparisons of growth mechanisms for Si thin films with different deposition rates in CVD process by the description of the roughness evolution

The roughness evolutions of micro-crystalline silicon thin films (μc-Si:H) with different growth rates prepared by chemical vapor depositions have been investigated by atomic force microscopy. The growth exponent β was measured as 0.8 ± 0.03, 1.1 ± 0.07 and 0.75 ± 0.02 for three sets of samples prepared by PECVD with and without hydrogen dilution ratio modulation and by HWCVD, respectively, and does not correlated with the deposition rate in a set. However, the root-mean-square roughness and lateral correlation length decrease with increasing the deposition rate for both PECVD and HWCVD process. We suggested that the nonstationary growth with large β is correlated with the shadowing effect. The influence of the deposition rate on the surface roughness could be related to the diminishing of the shadowing effect by surface species diffusion with higher mobility on an H-covered surface. The initial surface and nucleation condition play an important role in the surface roughness evolution.     

Effect of P incorporation on aggregation of nanocrystallites in amorphous and nanocrystalline mixed-phase silicon thin films

We report the effects of P incorporation on the nanometer-scale structural and electrical properties of amorphous and nanocrystalline mixed-phase Si:H films. In the intrinsic and weakly P-doped (3 × 10¹⁸ at/cm³) films, the nanocrystallites aggregate to cone-shaped structures. Conductive atomic force microscopy images showed high current flows through the nanocrystalline cones and a distinct two-phase structure in the micrometer range. Adding PH₃ into the processing gas moved the amorphous/nanocrystalline transition to a higher hydrogen dilution ratio required for achieving a similar Raman crystallinity. In a heavily P-doped (2 × 10²¹ at/cm³) film, the nanocrystalline aggregation disappeared, where isolated grains of nanometer sizes were distributed throughout the amorphous matrix. The heavily doped mixed-phase film with 5–10% crystal volume fraction showed a dramatic increase in conductivity. We offer an explanation for the nanocrystalline cone formation based on atomic hydrogen enhanced surface diffusion model, and propose that the coverage of P-related radicals on the existing nanocrystalline surface during film growth and the P segregation in grain boundaries are responsible for preventing new nucleation on the surface of the existing nanocrystallites, resulting in nanocrystallites dispersed throughout the amorphous matrix.     

Crystallization of bismuth titanate and bismuth silicate grown as thin films by atomic layer deposition

Bismuth silicate and bismuth titanate thin films were deposited by atomic layer deposition (ALD). A novel approach with pulsing of two Bi-precursors was studied to control the Si/Bi atomic ratio in bismuth silicate thin films. The crystallization of compounds formed in the Bi₂O₃–SiO₂ and Bi₂O₃–TiO₂ systems was investigated. Control of the stoichiometry of Bi–Si–O thin films was studied when deposited on Si(1 0 0) and crystallization was studied for films on sapphire and MgO-, ZrO₂- and YSZ-buffered Si(1 0 0). The Bi–Ti–O thin films were deposited on Si(1 0 0) substrate. Both Bi–Si–O and Bi–Ti–O thin films were amorphous after deposition. Highly a-axis oriented Bi₂SiO₅ thin films were obtained when the Bi–Si–O thin films deposited on MgO-buffered Si(1 0 0) were annealed at 800 °C in nitrogen. The full-width half-maximum values for 200 peak were also studied. An excess of bismuth was found to improve the crystallization of Bi–Ti–O thin films and the best crystallinity was observed with Ti/Bi atomic ratio of 0.28 for films annealed at nitrogen at 1000 °C. Roughness of the thin films as well as the concentration depth distribution were also examined.     

Dangling bonds in amorphous silicon investigated by multifrequency EPR

Paramagnetic coordination defects in undoped hydrogenated amorphous silicon (a-Si:H) are studied using multifrequency pulsed electron-paramagnetic resonance (EPR) spectroscopy at S-, X-, Q- and W-band microwave frequencies (3.6, 9.7, 34, and 94 GHz, respectively). The improved spectral information extractable from a multifrequency fitting procedure allows us to conclude that the g tensor exhibits a rhombic splitting instead of axial symmetry. Our methods allow for precise and accurate determination of the g tensor principal values g_x = 2.0079(2), g_y = 2.0061(2) and g_z = 2.0034(2) and their distribution parameters (g strain).     

Roughness of glass surfaces formed by sub-critical crack growth

This paper presents a study on the roughness of glass fracture surfaces formed as a consequence of sub-critical crack growth. Double-cantilever-beam specimens were used in these studies to form fracture surfaces with areas under well-defined crack velocities and stress intensity factors. Roughness depends on crack velocity: the slower the velocity, the rougher the surface. Ranging from approximately 1 × 10⁻¹⁰ m/s to approximately 10 m/s, the velocities were typical of those responsible for the formation of fracture mirrors in glass. Roughness measurements were made using atomic force microscopy on two glass compositions: silica glass and soda lime silica glass. For silica glass, the RMS roughness, R_q, decreased from about 0.5 nm at a velocity of 1 × 10⁻¹⁰ m/s to about 0.35 nm at a velocity of 10 m/s. For soda lime silica glass, the roughness decreased from about 2 nm to about 0.7 nm in a highly non-linear fashion over the same velocity range. We attributed the roughness and the change in roughness to microscopic stresses associated with nanometer scale compositional and structural variations within the glass microstructure. A theory developed to explain these results is in agreement with the data collected in the current paper. The RMS roughness of glass also depends on the area used to measure the roughness. As noted in other studies, fracture surfaces in glass exhibit a self-affine behavior. Over the velocities studied, the roughness exponent, ζ, was approximately 0.3 for silica glass and varied from 0.18 to 0.28 for soda lime silica glass. The area used for these measurements ranged from (0.5 μm)² to (5.0 μm)². These values of the roughness exponent are consistent with values obtained when the scale of the measurement tool exceeds a critical size, as reported earlier in the literature.