100 MeV Si8+ ion induced luminescence and thermoluminescence of nanocrystalline Mg2SiO4:Eu3+

Nanoparticles of Mg₂SiO₄:Eu³⁺ have been prepared by the solution combustion technique and the grain size estimated by PXRD is found to be in the range 40–50 nm. Ionoluminescence (IL) studies of Mg₂SiO₄:Eu³⁺ pellets bombarded with 100 MeV Si⁸⁺ ions with fluences in the range 1.124–22.48×10¹² ions cm^?2 are carried out at IUAC, New Delhi, India. Five prominent IL bands with peaks at 580 nm, 590 nm, 612 nm, 655 nm and 705 nm are recorded. These characteristic emissions are attributed to the luminescence centers activated by Eu³⁺ cations. It is found that IL intensity decreases rapidly in the beginning. Later on, the intensity decreases slowly with further increase of ion fluence. The reduction in the ionoluminescence intensity with increase of ion fluence might be attributed to degradation of Si–O (ν₃) and Si–O (2ν₃) bonds present on the surface of the sample. The red emission with peak at 612 nm is due to characteristic emission of ⁵D₀→⁷F₂ of the Eu³⁺ cations. Thermoluminescence (TL) studies of Mg₂SiO₄:Eu³⁺ pellets bombarded with 100 MeV Si⁸⁺ cations with fluences in the range 5×10¹¹ ions cm^?2 to 5×10¹³ ions cm^?2 are made at RT. Two prominent and well resolved TL glows with peaks at ～220 °C and ～370 °C are observed. It is observed that TL intensity increases with increase of ion fluence. This might be due to creation of new traps during swift heavy ion irradiation.     

Luminescence and defect studies of YAlO3:Dy3+, Sm3+ single crystals exposed to 100 MeV Si7+ ion beam

Ionoluminescence (IL) and photoluminescence (PL) spectra for different rare earth ions (Sm³⁺ and Dy³⁺) activated YAlO₃ single crystals have been induced with 100 MeV Si⁷⁺ ions with fluence of 7.81×10¹² ions cm^?2. Prominent IL and PL emission peaks in the range 550–725 nm in Sm³⁺ and 482–574 nm in Dy³⁺ were recorded. Variation of IL intensity in Dy³⁺ doped YAlO₃ single crystals was studied in the fluence range 7.81×10¹²–11.71×10¹² ions cm^?2. IL intensity is found to be high in lower ion fluences and it decreases with increase in ion fluence due to thermal quenching as a result of an increase in the sample temperature caused by ion beam irradiation. Thermoluminescence (TL) spectra were recorded for fluence of 5.2×10¹² ions cm^?2 on pure and doped crystals at a warming rate of 5 °C s^?1 at room temperature. Pure crystals show two glow peaks at 232 (Tg₁) and 328 °C (Tg₂). However, in Sm³⁺ doped crystals three glow peaks at 278 (Tg₁), 332 (Tg₂) and 384 °C (Tg₃) and two glow peaks at 278 (Tg₁) and 331 °C (Tg₂) in Dy³⁺ was recorded. The kinetic parameters (E, b s) were estimated using glow peak shape method. The decay of IL intensity was explained by excitation spike model.     

Optical properties,luminescence quenching mechanism and radiation hardness of Eu-doped GaN red powder phosphor

We report on the luminescence quenching mechanism of Eu-doped GaN powder phosphor produced with a low-cost, high yield rapid-ammonothermal method. We have studied as-synthesized and acid rinsed Eu-doped GaN powders with the Eu concentration of ～0.5 at.%. The Eu-doped GaN photoluminescence (PL) was investigated with 325 nm excitation wavelength at hydrostatic pressures up to 7.7 GPa in temperature range between 12 K and 300 K. The room temperature integrated Eu³⁺ ion PL intensity from acid rinsed material is a few times stronger than from the as-synthesized material. The temperature dependent PL studies revealed that the thermal quenching of the dominant Eu³⁺ ion transition (⁵D₀ → ⁷F₂) at 622 nm is stronger in the chemically modified phosphor indicating more efficient coupling between the Eu³⁺ ion and passivated GaN powder grains. Furthermore, it was found that thermal quenching of Eu³⁺ ion emission intensity can be completely suppressed in studied materials by applied pressure. This is due to stronger localization of bound exciton on Eu³⁺ ion trap induced by hydrostatic pressure. Furthermore, the effect of 2 MeV oxygen irradiation on the PL properties has been investigated for highly efficient Eu-doped GaN phosphor embedded in KBr–GaN:Eu³⁺ composite. Fairly good radiation damage resistance was obtained for 1.7 × 10¹² to 5 × 10¹³ cm^?2 oxygen fluence. Preliminary data indicate that Eu-doped GaN powder phosphor can be considered for devices in a radiation environment.     

Excited state interaction between Hydrochlorothiazide and europium ion in PMMA polymer and its application as optical sensor for Hydrochlorothiazide in tablet and serum samples

This paper reports on a facile technique combined with a simple, sensitive and selective spectrofluorimetric method for the determination of hydrochlorothiazide. In methanol, at pH 8.3 and λ_ex=340, hydrochlorothiazide can remarkably enhance the luminescence intensity of the Eu³⁺ ion doped in polymethylmethacrylate polymer (PMMA) matrix. This could be due to the energy transfer from hydrochlorothiazide to Eu³⁺ in the excited stated. At the optimized experimental conditions, the enhancement of the characteristic emission band (617 nm) of Eu³⁺ ion doped PMMA is directly proportional to the concentration of hydrochlorothiazide with a dynamic range of 5×10^?8–1.0×10^?5 mol L^?1 and detection limit of 8.0×10^?9 mol L^?1. Application of the suggested method was successfully applied to the determination of hydrochlorothiazide in pharmaceutical preparations and human serum samples, with high percentage of recovery, good accuracy and precision.     

Luminescence enhancement by the reduction–oxidation synthesis in monoclinic RE2O3 (RE=Eu,Gd) phosphors containing Eu3+ activator

A novel synthesis was developed for enhanced luminescence in sesquioxide phosphors containing Eu³⁺ activator. It consisted of two annealing steps: reduction under vacuum with gaseous H₂ at 10 Torr and 1300 °C and re-oxidation at 300–1500 °C in air. The integrated luminescence intensity of the monoclinic Eu₂O₃ phosphor was enhanced ca. 21 times by this method compared with conventional processing. The photoluminescence (PL) intensity was maximized at re-oxidation temperatures of 500–1100 °C. The PL characteristics of monoclinic Eu₂O₃ and Gd₂O₃:0.06Eu samples were compared with a commercial cubic Y₂O₃:Eu phosphor. The evolution of physical characteristics during the two-step annealing was studied by Raman spectroscopy, XPS, XRD, PL decay analysis, and SEM. PL decay lifetime increased proportionally to the PL intensity over the range 0.5–100 μs. Additional vibrational modes appeared at 490, 497, and 512 cm^?1 after the two-step annealing. The increase in PL intensity was ascribed to the formation of excess oxygen vacancies and their redistribution during annealing. Resonance crossovers between the charge transfer state and the emitting ⁵D_J states are discussed in relation to reported luminescence saturation mechanisms for oxysulfides Ln₂O₂S:Eu³⁺ (Ln=Y, La).     

Nanostructures on GaAs surfaces due to 60 keV Ar+-ion beam sputtering

The effect of 60 keV Ar⁺-ion beam sputtering on the surface topography of p-type GaAs(1 0 0) was investigated by varying angle of incidence of the ion (0–60°) with respect to substrate normal and the ion fluence (2 × 10¹⁷–3 × 10¹⁸ ions/cm²) at an ion flux of 3.75 × 10¹³ ions/cm²-s. For normal incidence and at a fluence of 2 × 10¹⁷ ions/cm², holes and islands are observed with the former having an average size and density of 31 nm and 4.9 × 10⁹ holes/cm², respectively. For 30° and 45° off-normal incidence, in general, a smooth surface appears which is unaffected by increase of fluence. At 60° off-normal incidence dots are observed while for the highest fluence of 3 × 10¹⁸ ions/cm² early stage of ripple formation along with dots is observed with amplitude of 4 nm. The applicability and limitations of the existing theories of ion induced pattern formation to account for the observed surface topographies are discussed.     

Optical spectroscopy and laser parameters of Zn2+/Er3+/Yb3+-tridoped LiNbO3 crystal

The Zn/Er/Yb:LiNbO₃ and Er/Yb:LiNbO₃ crystals were grown by the Czochralski technique. The laser characteristics of 1.54 μm emission were predicted based on the Judd–Ofelt theory, and the intensity parameters Ω_t (Ω₂=7.23×10^?20 cm², Ω₄=3.15×10^?20 cm² and Ω₆=1.43×10^?20 cm²) were obtained. The stimulated emission cross sections (σ_em) at 1.54 μm emission in Zn/Er/Yb:LiNbO₃ were calculated based on the McCumber theory and the Füchtbauer–Ladenburg theory. The gain cross section spectrum of Zn/Er/Yb:LiNbO₃ crystal was also investigated. Under 980 nm excitation, a lenghthening lifetime of 1.54 μm emission and an enhancement of green upconversion emission were observed for Zn/Er/Yb:LiNbO₃ crystal. The studies on the power pump dependence and the upconversion mechanism suggested that both green and red upconversion emissions were populated via the three-photon process, and Zn²⁺ ion tridoping increases the probability of cross relaxation process between the two neighboring Er³⁺ ions.     

Li3+ ion irradiation effects on ionic conduction in P(VDF–HFP)–(PC + DEC)–LiClO4 gel polymer electrolyte system

Swift heavy ion irradiation of P(VDF–HFP)–(PC + DEC)–LiClO₄ gel polymer electrolyte system with 48 MeV Li³⁺ ions having five different fluences was investigated with a view to increase the Li⁺ ion diffusivity in the electrolyte. Irradiation with swift heavy ion (SHI) shows enhancement of conductivity at lower fluences and decrease in conductivity at higher fluences with respect to unirradiated polymer electrolyte films. Maximum room temperature (303 K) ionic conductivity is found to be 2.2 × 10^− 2 S/cm after irradiation with fluence of 10¹¹ ions/cm². This interesting result could be ascribed to the fluence-dependent change in porosity and to the fact that for a particular ion beam with a given energy higher fluence provides critical activation energy for cross-linking and crystallization to occur, which results in the decrease in ionic conductivity. The XRD results show decrease in the degree of crystallinity upon ion irradiation at low fluences (≤ 10¹¹ ions/cm²) and increase in crystallinity at high fluences (> 10¹¹ ions/cm²). The scanning electron micrographs (SEM) exhibit increased porosity of the polymer electrolyte films after low fluence ion irradiation.     

Synthesis,characterization and studies of radiative properties on Eu3+-doped ZnAl2O4

Eu³⁺-doped ZnAl₂O₄ phosphors were successfully synthesized in air atmosphere at 900 °C. The phosphors were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), thermally stimulated luminescence (TSL) and photoluminescence (PL) techniques. The average particle size of the system as determined from SEM was found to be 100–150 nm (for samples annealed at 900 °C). PL spectra of the doped phosphors showed emission peaks corresponding to Eu³⁺ ions. Lifetime studies revealed Eu³⁺ ions to be in two different sites. The asymmetric ratio (I₆₁₆/I₅₉₂) was observed to be about 3.75. This suggested that Eu³⁺ ion entered the host mainly substituting Al³⁺ site distorting the local environment and is partly located on surface of the phosphors. A prominent glow peak at 430 K was observed in the TSL of γ-irradiated Eu³⁺-doped ZnAl₂O₄ phosphors. Trap parameters for this peak have been determined and the probable mechanism for the glow peak is proposed. CIE chromaticity coordinates for the system were evaluated. It was observed that, the system could be employed as a potential red emitting phosphor. Commercial utility of the phosphor was investigated by comparing it with commercial red phosphor. The PL intensity of the as prepared phosphors was 63% of that of the commercial phosphor. Apart from this, various radiative properties such as the Judd–Ofelt intensity parameters, spontaneous emission probabilities, luminescence branching ratios, radiative lifetimes and quantum efficiency were evaluated for the system.     

Photoluminescence properties of Er-doped β-FeSi2 grown by ion implantation

Photoluminescence (PL) properties of Er-doped β-FeSi₂ (β-FeSi₂:Er) and Er-doped Si (Si:Er) grown by ion implantation were investigated. In PL measurements at 4.2 K, the β-FeSi₂:Er showed the 1.54 μm PL due to the intra-4f shell transition of ⁴I_13/2→⁴I_15/2 in Er³⁺ ions without a defect-related PL observed in Si:Er. In the dependence of the PL intensity on excitation photon flux density, the obtained optical excitation cross-section σ in β-FeSi₂:Er (σ=7×10⁻¹⁷ cm²) is smaller than that in Si:Er (σ=1×10^-15 cm²). In the time-resolved PL and the temperature dependence of the PL intensity, the 1.54 μm PL in β-FeSi₂:Er showed a longer lifetime and larger activation energies for non-radiative recombination (NR) processes than Si:Er. These results revealed that NR centers induced by ion implantation damage were suppressed in β-FeSi₂:Er, but the energy back transfer from Er³⁺ to β-FeSi₂ was larger than Si:Er.     

Energy transfer induced Eu3+ photoluminescence enhancement in tellurite glass

In this work, structural, thermal and optical properties of Eu³⁺ doped TeO₂–La₂O₃–TiO₂ glass were investigated. The differential scanning calorimetry (DSC) measurements reveal an important stability factor ΔT=143.52 K, which indicates the good thermal and mechanical stabilities of tellurite glass. From the absorption spectrum, the optical band gap was found to be direct with E_g=3.23 eV. The temperature dependences of photoluminescence (PL) properties of Eu-doped and Eu–Tb codoped tellurite glass are investigated. As the temperature increases from 7 to 300 K, both the PL intensity and the PL lifetime relative to the ⁵D₂→⁷F₀ are nearly constant below 230 K and then an enhancement takes place. This anomalous feature is attributed to the thermally activated carrier transfer process from charged intrinsic defects states to Eu³⁺ energy levels.By co-doping tellurite glasses with Eu and Tb, a strong Eu³⁺ PL enhancement is shown due to excitation transfer from Tb³⁺ and intrinsic defects to Eu ions.     

5D0→7F1 and 5D0→7F2 transition in europium doped halosulphates for mercury-free lamps

Polycrystalline Na₃SO₄F:Eu and NaMgSO₄F:Eu halosulphate phosphors prepared by a wet chemical method have been studied for its photoluminescence (PL) and thermoluminescence (TL) characteristics. Two well resolved peaks are observed at 593 nm and 614 nm, which are assigned to due to ⁵D₀→⁷F₁ and ⁵D₀→⁷F₂ transitions of Eu³⁺ ions. TL is observed at temperatures between 100 °C and 300 °C. In this paper, we report PL emission spectra of Eu³⁺ and TL glow curves, which are more sensitive than the standard TLD-CaSO₄:Dy. The presented phosphors are applicable for the mercury free lamps and solid state lighting devices.     

Improved photoluminescence of BaMgAl10O17 blue phosphor prepared by spray pyrolysis

BaMgAl₁₀O₁₇:Eu²⁺ (BAM) blue phosphor particles with improved photoluminescence (PL) intensity under vacuum ultraviolet (VUV) excitation were prepared by a spray pyrolysis process. In order to improve the PL intensity, Er³⁺ and Nd³⁺ ions were used as co-doping elements. The VUV characteristics of BAM:Eu²⁺, M⁺ (M=Er, Nd) were monitored with varying the Er³⁺ and Nd³⁺ content in order to find the optimal co-doping concentration when they were prepared by spray pyrolysis. It was found that doping Er³⁺ or Nd³⁺ enhances the PL intensity of BAM:Eu²⁺ blue phosphor particles. In particular, the M³⁺ doping effect on the PL intensity was pronounced when the prepared BAM:Eu²⁺, M³⁺ particles were excited by 172 nm VUV. The maximum intensity was obtained when the M³⁺ content was 1.0 at% with respect to Ba element. The PL intensity of BAM:Eu²⁺, M⁺ (M=Er³⁺, Nd³⁺) particles was also further improved by producing them in a spherical shape, which was successfully achieved by controlling the spray solution. The optimized BAM:Eu²⁺, M⁺ particles had about 10% higher PL intensity than that of the commercial particles, which are made by a conventional solid-state reaction.     

Sensitive determination of adenosine disodium triphosphate in soil,milk, and pharmaceutical formulation by enoxacin–europium (III) fluorescence complex in solution

A new spectroflurometric method for the determination of adenosine disodium triphosphate (ATP) is developed. Fluorometric interaction between ATP and enoxacin (ENX)–Eu³⁺ complex was studied using UV–vis and fluorescence spectroscopy. Weak luminescence spectra of Eu³⁺ were enhanced after complexation with ENX at 589 nm and 614 nm upon excitation at 395 nm due to energy transfer from the ligand to the lanthanide ion. It was observed that luminescence spectrum of Eu³⁺ was strongly enhanced further at 614 nm after incorporation of ATP into the ENX–Eu³⁺ complex. Under optimal conditions, the enhancement of luminescence at 614 nm was responded linearly with the concentration of ATP. The linearity was maintained in the range of 1.5×10^?10–1.15×10^?8 M (R=0.9973) with the limit of detection (3σ) of 4.71×10^?11 M. The relative standard deviation (RSD) for 9 repeated measurements of 1×10^?9  M ATP was 1.25%. Successful determinations of ATP in soil, milk, and a pharmaceutical formulation with the proposed method were demonstrated.     

Synthesis and photoluminescent behavior of Eu3+-doped alkaline-earth tungstates

Eu³⁺-doped alkaline-earth tungstates MWO₄ (M=Ca²⁺, Sr²⁺, Ba²⁺) were prepared by a polymeric precursor method based on the Pechini process. The polymeric precursors were calcined at 700 °C for 2 h in order to obtain well-crystallized powders and then characterized by X-ray diffraction (XRD), thermogravimetric analysis (TG), scanning electron microscopy (SEM), Fourier-transform infrared (FTIR) spectroscopy and photoluminescence spectroscopy (PL). All prepared samples showed a pure crystalline phase with scheelite-type structure confirmed by XRD. It was noted that the charge-transfer band shifted from 260 to 283 nm when calcium is replaced by strontium. However, this band was not observed for Eu³⁺-doped barium tungstate. Upon excitation at 260 nm, the emission spectra are dominated by the red ⁵D₀→⁷F₂ transition at 618 nm. By analyzing of the emission lines, it was inferred that Eu³⁺ ions occupy low symmetry sites in the host lattice. It was also found that Eu³⁺-doped SrWO₄ displays better chromaticity coordinates and greater luminescence intensity than the other samples.     

Novel EGCG assisted ultrasound synthesis of self-assembled Ca2SiO4:Eu3+ hierarchical superstructures: Photometric characteristics and LED applications

This paper reports for the first time ultrasound, EGCG assisted synthesis of pure and Eu³⁺ (1–5 mol%) activated Ca₂SiO₄ nanophosphors having self-assembled superstructures with high purity. The shape, size and morphology of the product were tuned by controlling influential parameters. It was found that morphology was highly dependent on EGCG concentration, sonication time, pH and sonication power. The probable formation mechanism for various hierarchical superstructures was proposed. The PL studies of Ca₂SiO₄:Eu³⁺ phosphors can be effectively excited by the near ultraviolet (UV) (396 nm) light and exhibited strong red emission around 613 nm, which was attributed to the Eu³⁺ (⁵D₀ → ⁷F₂) transition. The concentration quenching phenomenon was explained based on energy transfer between defect and Eu³⁺ ions, electron–phonon coupling and Eu³⁺–Eu³⁺ interaction. The Judd–Ofelt intensity parameters and radiative properties were estimated by using PL emission spectra. The photometric studies indicate that the obtained phosphors could be a promising red component for possible applications in the field of white light emitting diodes.     

Blue emission in Eu2+ activated MgXAl10O17 (X = Sr,Ca) phosphors

Here we reported photoluminescence properties of Eu²⁺ activated in novel and existing MgXAl₁₀O₁₇ (X = Sr, Ca) phosphor which has been prepared by combustion synthesis at 550 °C under UV and near UV excitation wavelength. The PL emission properties of MgSrAl₁₀O₁₇:Eu²⁺ were monitored at 254 nm and 354 nm respectively keeping emission wavelength at 469 nm. Whereas novel MgCaAl₁₀O₁₇:Eu²⁺ exhibit emission band at 452 nm keeping excitation at 378 nm. These blue emission corresponds to 4f⁶5d¹ → 4f⁷ transition of Eu²⁺ ions. Further phosphor was analyzed by XRD for the confirmation of desired phase and purity.     

The influence of Eu3+ doping on photoluminescent properties of red emitting phosphor YInGe2O7:Eu3+ by microwave assisted and conventional sintering method

This paper describes an investigation of the crystalline morphology and photoluminescent properties of YInGe₂O₇ powders doped with different Eu³⁺ concentrations using microwave assisted sintering and conventional sintering. X-ray powder diffraction analysis confirmed the formation of monoclinic YInGe₂O₇ structure as YInGe₂O₇:Eu³⁺ powders were sintered at 1200 °C in microwave furnace for 1 h, and the raw material phase of Y₂O₃ was observed when Eu³⁺ concentration was below 30 mol%. Scanning electron microscopy showed microwave assisted sintering results in smaller particle size and more uniform grain size distribution. In the photoluminescent (PL) studies, the concentration quenching effect was observed under the excitation at 393 nm, but not under the excitation at CTS band. The ⁵D₀→⁷F₂ transition (620 nm), exhibits a non-exponential decay behavior as YInGe₂O₇:Eu³⁺ powders were sintered by microwave with the Eu³⁺ concentration higher than 50 mol%.     

Enhanced photoluminescence intensity of Y2O3: Eu3+ Sheets by codoping Pr3+ and involved energy transfer mechanisms

Y₂O₃: Eu³⁺ has been widely applied as red phosphors in the fields of displaying and illumination. Here, we report the enhanced luminescence intensity of Y₂O₃: Eu³⁺ by codoping Pr³⁺ ion. The Pr³⁺ and Eu³⁺ doped Y₂O₃ microsheets with high aspect ratio were synthesized by a simple route combining chemical precipitation and pyrolysis, which could emit intense red light centered at 610 nm under the 254 and 365 nm UV excitation. The fluorescence measurement indicated that the luminescence intensity of Y₂O₃: Eu³⁺, Pr³⁺ did not increase monotonously with increasing Pr³⁺ concentration. The highest improvement of the photoluminescence intensity of Y₂O₃:Eu³⁺ was realized in the sample doped with 2 mol% Pr³⁺, which was of 17.8% higher than the whole intensity of only Eu³⁺ doped Y₂O₃.The mechanism analysis based on SEM, XRD, fluorescence spectra, and simplified energy level diagram indicated that (1) energy transfer process between Pr³⁺ and Eu³⁺, (2) crystallinity, and (3) symmetry should respond for this nonmonotonous variation phenomenon by competition with each other. For energy transfer process between Pr³⁺ and Eu³⁺, it was suggested that the cross relaxation of ⁵D₀ + ⁷F₁(Eu³⁺)?³P₀ + ³H₆(Pr³⁺) and the efficient energy transfer from ³P₀ state of Pr³⁺ to ⁵D₁ energy level of Eu³⁺ lead to the improvement of the population of the ⁵D₀ state of Eu³⁺ so that the 610 red emission of Eu³⁺ ion was accordingly enhanced.     

Synthesis and photoluminescence properties of YVO4:Eu3+, Al3+ phosphor

The Y_0.95?xAl_xVO₄:5%Eu³⁺ (0≤x≤0.1) phosphors were successfully synthesized by solid state reaction at 900 °C for 6 h, and their luminescence properties were investigated under UV and VUV excitation. Monitoring at 619 nm, a strong broad absorption was enhanced by co-doping of Al³⁺ into the YVO₄:Eu³⁺ lattices at 256 nm under UV excitation. The VUV excitation spectra also showed the enhanced excitation bands at about 156 and 200 nm. Under 254 or 147 nm excitation, it was found that Y_0.95?xAl_xVO₄:Eu³⁺(0≤x≤0.1) phosphors showed strong red emission at about 619 nm corresponding to the electric dipole ⁵D₀^–7F₂ transition of Eu³⁺. The improvement of luminescence intensity of YVO₄:Eu³⁺ was also observed after partial substituting Y³⁺ by Al³⁺ and the optimal luminescence intensity appeared with incorporation of 2.5 mol% Al³⁺.