Tetraalkoxylated-PPV derivative: An efficient and pure green electroluminescent polymer with good solution processability

A new solution-processable tetraalkoxy-substituted poly(1,4-phenylenevinylene) derivative, poly{[2-(3′,7′-dimethyloctyloxy)-3,5,6-trimethoxy]-1,4-phenylenevinylene} (TALK-PPV), was synthesized through a dehydrohalogenation polymerization route, and its light-emitting properties were investigated. The TALK-PPV showed highly blue-shifted UV–visible absorption and PL emission spectra compared to the dialkoxy-substituted PPV derivatives. This is because of the disturbance to the π-conjugation caused by a steric hindered structure. The TALK-PPV thin film exhibited an absorption peak at 446 nm, with an onset at 515 nm. Its PL emission maximum was at 554 nm. Cyclic voltammetric analysis showed the HOMO and LUMO energy levels of the TALK-PPV to be 5.77 and 3.36 eV, respectively. Light-emitting devices were fabricated with an ITO (indium-tin oxide)/PEDOT/polymer/Ca/Al configuration. The TALK-PPV component leads to pure green light emission with a CIE 1931 chromaticity of (0.20, 0.74) at 100 cd/m² brightness, which is very close to the standard green (0.21, 0.71) demanded by the NTSC (National Television System Committee). The maximum brightness of this device was 24,900 cd/m² with an efficiency of 1.45 cd/A.     

Magneto-optical properties of α-Fe2O3@ZnO nanocomposites prepared by the high energy ball-milling technique

Magnetic–fluorescent nanocomposites (NCs) with 10 wt% of α-Fe₂O₃ in ZnO have been prepared by the high energy ball-milling. The crystallite sizes of α-Fe₂O₃ and ZnO in the NCs are found to vary from 65 nm to 20 nm and 47 nm to 15 nm respectively as milling time is increased from 2 to 30 h. XRD analysis confirms presence of α-Fe₂O₃ and ZnO in pure form in all the NCs. UV–vis study of the NCs shows a continuous blue-shift of the absorption peak and a steady increase of band gap of ZnO with increasing milling duration that are assigned to decreasing particle size of ZnO in the NCs. Photoluminescence (PL) spectra of the NCs reveal three weak emission bands in the visible region at 421, 445 and 485 nm along with the strong near band edge emission at 391 nm. These weak emission bands are attributed to different defect – related energy levels e.g. Zn-vacancy, Zn interstitial and oxygen vacancy. Dc and ac magnetization measurements show presence of weakly interacting superparamagnetic (SPM) α-Fe₂O₃ particles in the NCs. ⁵⁷Fe-Mössbauer study confirms presence of SPM hematite in the sample milled for 30 h. Positron annihilation lifetime measurements indicate presence of cation vacancies in ZnO nanostructures confirming results of PL studies.     

White LED based on nano-YAG:Ce3+/YAG:Ce3+,Gd3+ hybrid phosphors

Nano-YAG:Ce³⁺ and YAG:Ce³⁺,Gd³⁺ phosphors were synthesized by glycothermal method. The X-ray diffraction (XRD) measurements showed that the samples can be well-crystallized at 600 °C. The transition electron microscope (TEM) showed that the particles have sizes mostly in the range between 35 and 100 nm. The YAG:Ce nano-phosphor had a wide emission band ranging from blue to yellow peaking at 532 nm, due to the transition from the lowest 5d band to ²F_7/2, ²F_5/2 states of the Ce³⁺ ion. Red-shift of emission peak wavelength from 532 nm to 568 nm has been achieved as doping Gd³⁺ ions into the YAG:Ce³⁺ to substitute some Y³⁺ ions. White LEDs were fabricated by combining GaN (460 nm) chip with the YAG:Ce³⁺ and YAG:Ce³⁺,Gd³⁺. Color rendering index of the white LED as a function of the ratios of theses two kinds of phosphors was studied. As the ratio of YAG:Ce³⁺,Gd³⁺ phosphor increased, the color rendering index of the LED improved significantly under the forward bias of 20 mA. As the ratio of YAG:Ce³⁺ and YAG:Ce³⁺,Gd³⁺ was 11:9, the white LED had a color rendering index, CIE chromaticity coordinates and color temperature T_c of 85, (0.3116, 0.3202) and 6564 K, respectively.     

High-efficiency organic light-emitting diodes (OLEDs) with a mixed layer structure

Improved performance of organic light-emitting diodes (OLEDs) as obtained by a mixed layer was investigated. The OLEDs with a mixed layer which were composed of N,N′-diphenyl-N,N′-bis(1-napthyl-phenyl)-1,1′-biphenyl-4,4′-diamine (NPB), tris-(8-hydroxyquinolato) aluminum (Alq₃) and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) showed the highest brightness and efficiency, which reached 19048 cd/m² at 17 V and 4.3 cd/A at 10 mA/cm², respectively. The turn-on voltage of the device is 2.6 V. Its Commission Internationale del’Eclairage (CIE) coordinate is (0.497, 0.456) at 17 V, and the CIE coordinates of the device are largely insensitive to the driving voltages, which depicts stabilized yellow color.     

Synthesis of CdS nanocrystals by a microwave activated method and investigation of the photoluminescence and electroluminescence properties

We have synthesized CdS nanocrystals (NCs) by a microwave activated method. CdSO₄ and Na₂S₂O₃ were used as the precursors and thioglycolic acid (TGA) was used as capping agent molecule. The aqueous synthesis was based on the heat sensitivity of Na₂S₂O₃. In this method, microwave irradiation creates the activation energy for dissociation of Na₂S₂O₃ and leads to the CdS NCs formation. X-ray diffraction (XRD) and transmission electron microscopy (TEM) analyses demonstrated hexagonal phase CdS NCs with an average size around 3 nm for sample prepared at 5 min irradiation time. A band gap range of 3.38-2.89 eV was possible only by increasing the microwave irradiation time, corresponding to a 2.7-3.7 nm size. Photoluminescence (PL) spectra showed a white emission between 400 and 750 nm. The best attained PL quantum yield (QY) of the NCs was about 10%. Synthesized NCs were used as emissive layer in a light emitting device (LED) with ITO/PEDOT:PSS/PVK/CdS-NCs/AL structure. Turn on voltage of fabricated device was about 7 V. The CIE color coordinate of the LED at (0.34, 0.43) demonstrated a near white light LED with an emission on green-yellow boundary of white.     

Memory characteristics and tunneling mechanism of Pt nano-crystals embedded in HfAlOx films for nonvolatile flash memory devices

A non-volatile flash memory device based on metal oxide semiconductor (MOS) capacitor structure has been fabricated using platinum nano-crystals(Pt–NCs) as storage units embedded in HfAlO_x high-k tunneling layers. Its memory characteristics and tunneling mechanism are characterized by capacitance–voltage(C–V) and flat-band voltage-time(ΔV_FB-T) measurements. A 6.5 V flat-band voltage (memory window) corresponding to the stored charge density of 2.29 × 10¹³ cm⁻² and about 88% stored electron reserved after apply ±8 V program or erase voltage for 10⁵ s at high frequency of 1 MHz was demonstrated. Investigation of leakage current–voltage(J–V) indicated that defects-enhanced Pool-Frenkel tunneling plays an important role in the tunneling mechanism for the storage charges. Hence, the Pt–NCs and HfAlO_x based MOS structure has a promising application in non-volatile flash memory devices.     

Synthesis and characterization of PPV-based light-emitting copolymer with alkylsilylphenyloxy pendant group for light-emitting diode applications

A novel light-emitting copolymer with high brightness and luminance efficiency was synthesized using the Gilch polymerization method, and its electro-optical properties were investigated. A polymer light-emitting diode (PLED) was fabricated in ITO/PEDOT/light-emitting copolymer/Ca/Al configuration. The turn-on voltage of the PLED was about 5.0 V with maximum brightness and luminance efficiency up to 1420 cd/m² at 16.2 V and 0.5 cd/A at 6.8 V, respectively.     

A proposed organic Schottky barrier photodetector for application in the visible region

The fabrication and characterization of an organic photodetector (OPD) in the form of ITO coated glass/polycarbazole (PCz)/Al Schottky contact is reported. The device has been fabricated in our laboratory for the first time using the polymer synthesized by us. The device has been subsequently characterized in respect of electrical and optical properties in order to explore its potential for possible use as a detector in the visible region at 650 nm. It is observed that the detector exhibits a reasonably high value of peak detectivity (∼6 × 10⁶ cm Hz^1/2 W⁻¹) near zero bias voltage at V = 0.2 V.     

Radioluminescence of synthetic quartz related to alkali ions

The radioluminescence (RL) of synthetic quartzes (GEMMA Quartz & Crystal Company) has been measured at room temperature. Some samples were treated by electrodiffusion (“sweeping”) in order to change the concentrations of alkali ions, mainly Li⁺ and Na⁺, which in quartz are known to be linked to Al ions, substitutional for Si ions.The RL emission spectra show evidence of a role of alkali ions in affecting some specific emissions. All the spectra could be analysed as composed of four bands in the blue and UV region. Specifically, the well known blue emission at around 470 nm was seen to be composed by two bands at 430 nm (2.86 eV) and at 485 nm (2.53 eV). Effects of irradiation, during the RL measurements, were clearly seen only in the “Li swept in” sample, namely an increase in the 485 nm band intensity and a decrease in the 430 nm band one. The previously reported UV emission was detected at 355 nm (3.44 eV) in all the samples, being the most intense band in the “swept out” sample. A further UV emission was detected at 315 nm (3.94 eV), more intense in untreated samples.Possible assignments of the detected emission bands are discussed in relation to the defects of quartz, specifically focusing on the Al centres that are most affected by sweeping procedures.     

Emission of Cu-related complexes in ZnO:Cu nanocrystals

Photoluminescence (PL), its temperature dependence, scanning electronic microscopy (SEM) and X ray diffraction (XRD) have been applied for the comparative study of varying the emission, morphology and crystal structure of ZnO and ZnO:Cu nanocrystals (NCs) versus technological routines, as well as the dependence of ZnO:Cu NC parameters on the Cu concentration. A set of ZnO and ZnO Cu NCs was prepared by the electrochemical (anodization) method at a permanent voltage and different etching durations with follows thermal annealing at 400 °C for 2 h in ambient air. The size of ZnO NCs decreases from 300 nm×540 nm down to 200 nm×320 nm with etching duration increasing. XRD study has confirmed that thermal annealing stimulates the ZnO oxidation and crystallization with the formation of wurtzite ZnO crystal lattice. XRD method has been used for monitoring the lattice parameters and for confirming the Cu doping of ZnO Cu NCs. In ZnO Cu NCs four defect related PL bands are detected with the PL peaks at 1.95–2.00 eV (A), 2.15-2.23  eV (B), 2.43–2.50 eV (C) and 2.61–2.69 eV (D). Highest PL intensities of orange, yellow and green emissions have been obtained in ZnO Cu NCs with the Cu concentration of 2.28 at%. At Cu concentration increasing (≥2.28 at%) the PL intensities of the bands A, B, C decrease and the new PL band peaked at 2.61–2.69 eV at 10 K appears in the PL spectrum. The variation of PL intensities for all PL bands versus temperature has been studied and the corresponding activation energies of PL thermal decay have been estimated. The type of Cu-related complexes is discussed using the correlation between the PL spectrum transformation and the variation of XRD parameters in ZnO Cu NCs.     

Dual color emitting Eu doped strontium orthosilicate phosphors synthesized by bio-template assisted ultrasound for solid state lightning and display applications

A novel Sr₂SiO₄:Eu (1–5 mol %) superstructures (SS) were synthesized using bio-sacrificial A.V. gel assisted ultrasound method. Powder X-ray diffraction patterns confirmed the presence of both α and β phase formation. It was evident that the morphological growth was highly reliant on A.V. gel concentration, sonication time, pH and sonication power. The formation mechanisms for different hierarchical SS were proposed. From diffuse reflectance spectra, the energy band gap was estimated and found to be ∼4.70–5.11 eV. The photoluminescence emission spectra for the excitation at 392 nm, shows characteristic emission peaks at 593, 613, 654 and 702 nm which were attributed to ⁵D₀ → ⁷F₀, ⁷F_1, ⁷F₂ and ⁷F₃ transitions of Eu³⁺ ions respectively. Conversely, when the samples were subjected to the heat treatment at 850 °C for 3 h under argon atmosphere, display an intense broad emission peak with two de-convoluted peaks at 490 and 550 nm due to 4f⁶5d¹→4f¹ (⁸S_7/2) transitions of Eu²⁺ ions. The concentration quenching phenomenon was discussed which attributes to energy transfer, electron–phonon coupling and ion–ion interaction. The Judd–Ofelt intensity parameters and other radiative properties were estimated by using emission spectra. The CIE chromaticity coordinate values of Sr₂SiO₄:Eu²⁺ and Eu³⁺ nanophosphors were located in green and red regions respectively. The calculated CCT and CRI values specify that the present phosphor can be fairly useful for both green and red components of white LED’s. Luminescence decay and quantum yield suggest the suitability of this phosphor as an efficient luminescent medium for light emitting diodes. Overall, the results elucidated a rapid, environmentally benign, cost-effective and convenient method for Sr₂SiO₄:Eu³⁺ synthesis and for the possible applications such as solid state lighting and display devices.     

CMOS monolithic optoelectronic integrated circuit for on-chip optical interconnection

A monolithic silicon CMOS optoelectronic integrated circuit (OEIC) is designed and fabricated using standard 0.35-μm CMOS technology. This OEIC monolithically integrates light emitting diode (LED), silicon dioxide waveguide, photodetector and receiver circuit on a single silicon chip. The silicon LED operates in reverse breakdown mode and can emit light at 8.5 V. The output optical power is 31.2 nW under 9.8 V reverse bias. The measured spectrum of LED showed two peaks at 760 nm and 810 nm, respectively. The waveguide is composed of silicon dioxide/metal multiple layers. The responsivity of the n-well/p-substrate diode photodetector is 0.42 A/W and the dark current is 7.8 pA. The LED-emitted light transmits through the waveguide and can be detected by the photodetector. Experimental results show that on-chip optical interconnects are achieved by standard CMOS technology successfully.     

Organic light sources look forward to optimize the photosynthesis process

We introduce a series of organic LEDs that exploit the monomer and excimer emissions from single phosphor dopant emitters. These organic LEDs were found to be effective in the simultaneous creation of blue and red emission bands essential for plant growth. By varying the concentration of novel phosphorescent dopants selected from a series of newly synthesized platinum complexes [PtL^22–25Cl], we have manufactured the blue-biased LEDs [with the Commission Internationale de L’Eclairage (CIE) coordinates (x, y) (0.27, 0.37)] and the red-biased LEDs [CIE coordinates (0.53, 0.38)], at a high luminance of ≈500 cd/m² and with external electroluminescence (EL) quantum efficiency of 15–18% photon/electron (→ power efficiency 8–12 lm/W). The EL spectrum most suitable for the action spectrum of photosynthesis yield was that of a device incorporating 20 wt.% content of [PtL²³Cl]. This LED yielded photosynthetic photon flux (PPF) approaching 10 μmol s⁻¹ W⁻¹ of the electrical power, a value which significantly exceeds that for the professional lamps used commonly for horticultural lighting.     

Determining the work function of a carbon-cone cold-field emitter by in situ electron holography

Cold-field emission properties of carbon cone nanotips (CCnTs) have been studied in situ in the transmission electron microscope (TEM). The current as a function of voltage, i(V), was measured and analyzed using the Fowler–Nordheim (F–N) equation. Off-axis electron holography was employed to map the electric field around the tip at the nanometer scale, and combined with finite element modeling, a quantitative value of the electric field has been obtained. For a tip-anode separation distance of 680 nm (measured with TEM) and a field emission onset voltage of 80 V, the local electric field was 2.55 V/nm. With this knowledge together with recorded i(V) curves, a work function of 4.8 ± 0.3 eV for the CCnT was extracted using the F–N equation.     

Dynamical XPS measurements for probing photoinduced voltage changes

Photoillumination with 405 nm laser causes shifts in XPS peaks of n-Si(100), and CdS. To distinguish between surface photovoltage (SPV), and charging, dynamical measurements are performed, while sample is subjected to square wave pulses of ± 10.00 V amplitude, and 10^?3–10⁵ Hz frequency. For n-Si, Si2p peaks are twinned at + 10.00 and ?10.00, yielding always 20.00 eV difference. Photoillumination shifts the twinned peaks to higher energies, but the difference is always 20.00 eV. However, for CdS, the measured binding difference of Cd3d peaks exhibits strong frequency dependence due to charging, which indicates that both fast SPV and slow charging effects are operative.     

The effect of Ag layer thickness on the properties of WO3/Ag/MoO3 multilayer films as anode in organic light emitting diodes

Transparent conductive WO₃/Ag/MoO₃ (WAM) multilayer electrodes were fabricated by thermal evaporation and the effects of Ag layer thickness on the optoelectronic and structural properties of multilayer electrode as anode in organic light emitting diodes (OLEDs) were investigated using different analytical methods. For Ag layers with thickness varying between 5 and 20 nm, the best WAM performances, high optical transmittance (81.7%, at around 550 nm), and low electrical sheet resistance (9.75 Ω/cm²) were obtained for 15 nm thickness. Also, the WAM structure with 15 nm of Ag layer thickness has a very smooth surface with an RMS roughness of 0.37 nm, which is suitable for use as transparent conductive anode in OLEDs. The current density?voltage?luminance (J?V?L) characteristics measurement shows that the current density of WAM/PEDOT:PSS/TPD/Alq₃/LiF/Al organic diode increases with the increase in thickness of Ag and WO₃/Ag (15 nm)/MoO₃ device exhibits a higher luminance intensity at lower voltage than ITO/PEDOT:PSS/TPD/Alq₃/LiF/Al control device. Furthermore, this device shows the highest power efficiency (0.31 lm/W) and current efficiency (1.2 cd/A) at the current density of 20 mA/cm², which is improved 58% and 41% compared with those of the ITO-based device, respectively. The lifetime of the WO₃/Ag (15 nm)/MoO₃ device was measured to be 50 h at an initial luminance of 50 cd/m², which is five times longer than 10 h for ITO-based device.     

Hydrophilic polyaniline nanofibrous architecture using electrosynthesis method for supercapacitor application

An electrosynthesis process of hydrophilic polyaniline nanofiber electrode for electrochemical supercapacitor is described. The TGA–DTA study showed polyaniline thermally stable up to 323 K. Polyaniline nanofibers exhibit amorphous nature as confirmed from XRD study. Smooth interconnected fibers having diameter between 120–125 nm and length typically ranges between 400–500 nm observed from SEM and TEM analysis. Contact angle measurement indicated hydrophilic nature of polyaniline fibers. Optical study revealed the presence of direct band gap with energy 2.52 eV. The Hall effect measurement showed room temperature resistivity ∼3 × 10⁻⁴ Ω cm and Hall mobility 549.35 cm⁻²V⁻¹ s⁻¹_. The supercapacitive performance of nanofibrous polyaniline film tested in 1 M H₂SO₄ electrolyte and showed highest specific capacitance of 861 F g⁻¹ at the voltage scan rate of 10 mV/s.     

Highly efficient and stable organic light-emitting diode by balancing drift current of charge

Highly efficient and stable OLED device in which hole-drift current and electron-drift current are balanced was fabricated. Drift current characteristics according to the thickness of organic layer were examined using the device with ITO/m-MTDATA/NPB/Al structure that can only move the hole and the device with Al/LiF/Alq₃/LiF/Al structure that can only move the electron. Using the result of such examination, green device with balanced drift current was produced. Device with the structure of m-MTDATA (80 nm)/NPB (20 nm)/C-545T (3%) doped Alq₃ (5 nm)/Alq₃ (59 nm)/LiF (1 nm)/Al (200 nm) showed color purity of (0.309, 0.643) and high efficiency of 7.0 lm/W (14.4 cd/A). Most of light emission was observed inside the green emitting layer. Through the result of EL spectrum for the device also including red emitting layer, same result could be obtained. The device with balanced drift current also showed half life-time of 175 h for initial luminance of 3000 cd/m², which is more stable in comparison to the device without balanced drift current.     

An organic electroluminescent device made from a gadolinium complex

A gadolinium ternary complex, tris(1-phenyl-3-methyl-4-isobutyryl-5-pyrazolone) (phenanthroline) gadolinium [Gd(PMIP)₃(Phen)] was synthesized and used as a light emitting material in the organic electroluminescent (EL) devices. The triple layer device with a structure of indium tin oxide (ITO)/N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine (TPD) (20 nm)/Gd(PMIP)₃(Phen) (80 nm)/2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline (bathocuproine or BCP) (20 nm)/Mg: Ag(200 nm)/Ag(100 nm) exhibited green emission peaking at 535 nm. A maximum luminance of 230 cd/m² at 17 V and a peak power efficiency of 0.02 lm/w at 9 V were obtained.     

Cadmium sulfide quantum dots stabilized by castor oil and ricinoleic acid

Castor oil and ricinoleic acid (an isolate of castor oil) are environmentally friendly bio-based organic surfactants that have been used as capping agents to prepare nearly spherical cadmium sulfide quantum dots (QDs) at 230, 250 and 280 °C. The prepared quantum dots were characterized by Ultra violet–visible (UV–vis), Photoluminescence (PL), Transmission Electron Microscopy (TEM), High Resolution Transmission Electron Microscopy (HRTEM) and X-ray diffraction (XRD) giving an overall CdS QDs average size of 5.14±0.39 nm. The broad XRD pattern and crystal lattice fringes in the HRTEM images showed a hexagonal phase composition of the CdS QDs. The calculated/estimated average size of the prepared castor oil capped CdS QDs for various techniques were 4.64 nm (TEM), 4.65 nm (EMA), 5.35 nm (UV–vis) and 6.46 nm (XRD). For ricinoleic acid capped CdS QDs, the average sizes were 5.56 nm (TEM), 4.78 nm (EMA), 5.52 nm (UV–vis) and 8.21 nm (XRD). Optical properties of CdS QDs showed a change of band gap energy from its bulk band gap of 2.42–2.82 eV due to quantum size confinement effect for temperature range of 230–280 °C. Similarly, a blue shift was observed in the photoluminescence spectra. Scanning electron microscope (SEM) observations show that the as-synthesized CdS QDs structures are spherical in shape. Fourier transform infra-red (FTIR) studies confirms the formation of castor oil and ricinoleic acid capped CdS QDs.