Photoluminescence studies of ZnO thin films on R-plane sapphire substrates grown by sol–gel method

Zinc oxide (ZnO) thin films on R-plane sapphire substrates were grown by the sol–gel spin-coating method. The optical properties of the ZnO thin films were investigated using photoluminescence. In the UV range, the asymmetric near-band-edge emission was observed at 300 K, which consisted of two emissions at 3.338 and 3.279 eV. Eight peaks at 3.418, 3.402, 3.360, 3.288, 3.216, 3.145, 3.074, and 3.004 eV, which respectively correspond to the free exciton (FX), bound exciton, transverse optical (TO) phonon replica of FX recombination, and first-order longitudinal optical phonon replica of FX and the TO (1LO+TO), 2LO+TO, 3LO+TO, 4LO+TO, and 5LO+TO, were obtained at 12 K. From the temperature-dependent PL, it was found that the emission peaks at 3.338 and 3.279 eV corresponded to the FX and TO, respectively. The activation energy of the FX and TO emission peaks was found to be about 39.3 and 28.9 meV, respectively. The values of the fitting parameters of Varshni's empirical equation were α=4×10^?3 eV/K and β=4.9×10³ K, and the S factor of the ZnO thin films was 0.658. With increasing temperature, the exciton radiative lifetime of the FX and TO emissions increased. The temperature-dependent variation of the exciton radiative lifetime for the TO emission was slightly higher than that for the FX emission.     

Photoluminescence properties of Eu-doped ZnO films grown by sputtering-assisted metalorganic chemical vapor deposition

Photoluminescence (PL) properties of Eu-doped ZnO (ZnO:Eu) grown by a sputtering-assisted metalorganic chemical vapor deposition technique were investigated. In PL measurements at 300 K, the samples annealed at 600 °C for 30 min showed clear red-emission lines due to the intra-4f shell transition of ⁵D₀→⁷F_J (J=0–4) in Eu³⁺. In photoluminescence excitation (PLE) spectra, the PL was observed under the high-energy excitation above the band-gap energy of ZnO (indirect excitation) and the low-energy excitation resonant to the energy levels of ⁷F₀–⁵D₃ and ⁷F₀–⁵D₂ transitions in Eu³⁺ (direct excitation). The PL lifetime under the indirect excitation was shorter than that under the direct excitations. These PL properties revealed that the energy transfer from ZnO host to Eu³⁺ was accompanied under indirect excitation.     

Spectral structure of barium–phosphate–silicate phosphor Ba10(PO4)4(SiO4)2:EuM+

The new apatite–silicate phosphor doped with Eu ions in Ba₁₀(PO₄)₄(SiO₄)₂ matrix was synthesized through solid-state reaction. It was found that the as-synthesized phosphor displayed apparent mixture of band and line emission peaks giving rise to pseudo white light. The narrow emission bands peaking at 410 nm can be assigned to the 4f⁶5d→4f⁷(⁸S_7/2) transition of Eu²⁺ ions, and the other band at 507 nm is ascribed to anomalous fluorescent emission. One group of line emission peaking at 595 nm and 613 m were due to the ⁵D₀→⁷F₁ and ⁵D₀→⁷F₂ transition of Eu³⁺ ions. The occurrence of photostimulated luminescence and discrete emission lines in violet (410 nm), green (507 nm) and red (595 nm and 613 nm) colors indicate that this material has potential application in fields of white-light-emitting.     

Study on visible luminescence of the Tm3 +: 1D2 → 3 F4 emission state in lead borate titanate aluminumfluoride glasses

This paper reports the visible luminescence properties of ¹D₂ state of Tm^3 + -doped lead borate titanate aluminumfluoride (LBTAFTm) glasses. The absorption and luminescence was analyzed within the frame work of Judd-Ofelt model. The reliability of J-O intensity parameters obtained from the experimental oscillator strengths have satisfactorily been correlated with the calculated oscillator strengths with small r.m.s deviation of ± 0.12 × 10^-6 by the least square fit analysis. Upon 359 nm excitation, the luminescence spectra show only one emission band at 458 nm (blue) corresponding to the ¹D₂ → ³ F₄ transition in the spectral region 400–500 nm. No luminescence quenching has been observed with the increase of Tm^3 + concentration. The decay profiles of the ¹D₂ level have shown single-exponential nature for all the concentrations and the decay times were found to decrease with the increase of concentration. The stimulated emission cross-section (σ_e) for the observed emission transition has also been computed. The large quantum efficiency (η) of the ¹D₂ level suggests the utility of LBTAFTm glass as a potential host for optical device applications at 458 nm emission wavelength.     

Synthesis and photoluminescent behavior of Eu3+-doped alkaline-earth tungstates

Eu³⁺-doped alkaline-earth tungstates MWO₄ (M=Ca²⁺, Sr²⁺, Ba²⁺) were prepared by a polymeric precursor method based on the Pechini process. The polymeric precursors were calcined at 700 °C for 2 h in order to obtain well-crystallized powders and then characterized by X-ray diffraction (XRD), thermogravimetric analysis (TG), scanning electron microscopy (SEM), Fourier-transform infrared (FTIR) spectroscopy and photoluminescence spectroscopy (PL). All prepared samples showed a pure crystalline phase with scheelite-type structure confirmed by XRD. It was noted that the charge-transfer band shifted from 260 to 283 nm when calcium is replaced by strontium. However, this band was not observed for Eu³⁺-doped barium tungstate. Upon excitation at 260 nm, the emission spectra are dominated by the red ⁵D₀→⁷F₂ transition at 618 nm. By analyzing of the emission lines, it was inferred that Eu³⁺ ions occupy low symmetry sites in the host lattice. It was also found that Eu³⁺-doped SrWO₄ displays better chromaticity coordinates and greater luminescence intensity than the other samples.     

Development of zeolite-derived novel aluminosilicate phosphors

In this research, zeolite-derived aluminosilicate phosphors were synthesized through the ion exchange route. Red light-emitting property of Eu³⁺-doped aluminosilicate phosphors were discussed from a view point of the Eu content, heat-treatment condition and the oxidation state of Eu ions. The crystalline phase of the host aluminosilicates could be successfully controlled as designed based on the published NaAlO₂–SiO₂ binary phase diagram. Orange-red emission peaks derived from the ⁵D₀→⁷F_j (j=0, 1, 2, 3, 4) transition of Eu³⁺ were observed around 590–700 nm, and 4f⁶5d→4f⁷ transition of Eu²⁺ was observed at around 400–500 nm. The relative intensity I(⁵D₀→⁷F₂) of the dominant emission peak at 612 nm increased consistently with the Eu content. The results of the XANES spectroscopy analysis revealed that Eu²⁺ ion in the 1400 °C as heat-treated host aluminosilicate were successfully converted to Eu³⁺ by the additional annealing at 1100 °C. The Eu contents and heat-treatment conditions were determined to exhibit the best performance as a red phosphor, which were 10 wt% and 1500 °C, respectively     

Optical properties and structural characteristics of ZnO thin films grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy

We investigated structural and optical properties of ZnO thin films grown on (112?0) a-plane sapphire substrates using plasma-assisted molecular beam epitaxy. Negligible biaxial stress in ZnO thin films is due to the use of (112?0) a-plane sapphire substrates and slow substrate cooling. The 14 K photoluminescence spectrum shows a blueshift of energy positions compared with ZnO single crystal. A donor with binding energy of 43 meV and an acceptor with binding energy of ～170 meV are identified by well-resolved photoluminescence spectra. A characteristic emission band at 3.320 eV (so-called A-line) is studied. Based on analysis from photoluminescence spectra, the origin of the A-line, it seems, is more likely an (e, A°) transition, in which defect behaves as an acceptor. The room-temperature photoluminescence is dominated by the FX at 3.307 eV, which is an indication of strongly reduced defect density in ZnO thin films.     

Photoluminescence characterization of a novel red-emitting phosphor In2(MoO4)3:Eu3+ for white light emitting diodes

The red-emitting phosphor In₂(MoO₄)₃:Eu³⁺ with cubic crystal structure was synthesized by a conventional solid-state reaction technique and its photoluminescence properties were investigated. The prepared phosphor can be efficiently excited by ultraviolet (395 nm) and blue (466 nm) light. The emission spectra of the phosphor manifest intensive red-emitting lines at 612 nm due to the electric dipole ⁵D₀→⁷F₂ transitions of Eu³⁺. The chromaticity coordinates of x=0.63, y=0.35 (λ_ex=395 nm) and x=0.60, y=0.38 (λ_ex=466 nm) are close to the standard of National Television Standard Committee values (NTSC) values. The concentration quenching of In₂(MoO₄)₃:Eu³⁺ is 40 mol% and the concentration self-quenching mechanism under 466 nm excitation was the dd intereaction. As a result of the strong emission intensity and good excitation, the phosphor In₂(MoO₄)₃:Eu³⁺ is regarded as a promising red-emitting conversion material for white LEDs.     

Studies on structural and magnetic properties of Co-doped pyramidal ZnO nanorods synthesized by solution growth technique

Large-area arrays of highly oriented Co-doped ZnO nanorods with pyramidal hexagonal structure are grown on silica substrates by wet chemical decomposition of zinc–amino complex in an aqueous medium. In case of undoped ZnO with an equi-molar ratio of Zn²⁺/hexamethylenetetramine (HMT), highly crystalline nanorods were obtained, whereas for Co-doped ZnO, good quality nanorods were formed at a higher Zn²⁺/HMT molar ratio of 4:1. Scanning electron microscope (SEM) studies show the growth of hexagonal-shaped nanorods in a direction nearly perpendicular to the substrate surface with a tip size of ～50 nm and aspect ratio around 10. The XRD studies show the formation of hexagonal phase pure ZnO with c-axis preferred orientation. The doping of Co ions in ZnO nanorods was confirmed by observation of absorption bands at 658, 617 and 566 nm in the UV–vis spectra of the samples. The optical studies also suggest Co ions to be present both in +2 and +3 oxidation states. From the photoluminescence studies, a defect-related emission is observed in an undoped sample of ZnO at 567 nm. This emission is significantly quenched in Co-doped ZnO samples. Further, the Co-doped nanorods have been found to show ferromagnetic behavior at room temperature from vibrating sample magnetometer (VSM) studies.     

Photoluminescence characterization of beryllium-implanted 6H–silicon carbide

Beryllium has been implanted into both n- and p-type 6H–SiC with post-implantation annealing at 1600 °C. Photoluminescence (PL) measurements have been performed, and PL lines at 420.5, 431 nm, and a broad band at around 505 nm have been observed. The line at 420.5 nm is attributed to an intrinsic defect D_II-center induced by beryllium implantation. The effects of excitation intensity and temperature during the PL experiments are investigated. Based on the excitation laser dependence PL result, the new doublet lines at around 431 nm are thought to be associated with beryllium related bound excitons. The broad band corresponding to the green luminescence at room temperature has been attributed to the recombination of free carriers to beryllium bound levels.     

Photoluminescence investigations of Li2SiO3:Ln (Ln=Er3+, Eu3+, Dy3+, Sm3+) phosphors

In this study, we report a comprehensive structural and photoluminescence (PL) study on lithium metasilicate (Li₂SiO₃) phosphor ceramics doped with four rare earth (RE) ions. X-ray diffraction (XRD) patterns show a dominant phase, characteristic of the orthorhombic structure Li₂SiO₃ compound and the presence of dopants has no effect on the basic crystal structure of the material. The first excited state Er³⁺ luminescence at 1.54 μm arises from a sharp atomic-like radiative transition between the ⁴I_13/2 state and the ⁴I_15/2 state (ground level) under a 532 nm line of an Ar ion laser excitation. Sm doped samples showed Sm³⁺ emission characteristics corresponding to the some ⁴G_5/2→⁶H_j (j=5/2,9/2,11/2) transitions indicating a strong crystal-field effect. PL spectra of Eu doped material exhibited peaks corresponding to the ⁵D₀→⁷F_j (j=0,1,2,3 and 4) transitions under 405 nm excitation. The dominant red color emission at 612 nm from the hypersensitive (⁵D₀→⁷F₂) transition of Eu³⁺ indicates the inversion antisymmetry crystal field around Eu³⁺ ion, which is favorable to improve the red color purity. Dy doped samples showed the Dy³⁺ emission characteristic due to the ⁴F_9/2→⁶H_13/2 transition. Their relative intensity ratios also suggested the presence of a symmetric environment around the metal ion. We suggest that lithium metasilicate has enough potential candidates to be a phosphor material.     

Temperature dependent photoluminescence processes in ZnO thin films grown on sapphire by pulsed laser deposition

Temperature dependence of the photoluminescence (PL) transitions in the range of 10–300 K was studied for ZnO thin films grown on sapphire by pulsed laser deposition. The low temperature PL spectra were dominated by recombination of donor bound excitons (B_X) and their phonon replicas. With increasing temperature, free exciton (F_X) PL and the associated LO phonon replicas increased in intensity at the expense of their bound counterparts. The B_X peak with line width of ∼6 meV at 10 K exhibited thermal activation energy of ∼17 meV, consistent with the exciton-defect binding energy. The separation between the F_X and B_X peak positions was found to reduce with increasing temperature, which was attributed to the transformation of B_X into the shallower donor bound exciton complexes at consecutive lower energy states with increasing temperature, which are possible in ZnO. The energy separation between F_X peak and its corresponding 1-LO phonon replica showed stronger dependence on temperature than that of 2-LO phonon replica. However, their bound counterparts did not exhibit this behavior. The observed temperature dependence of the energy separation between the free exciton and it is LO phonon replicas are explained by considering the kinetic energy of free exciton. The observed PL transitions and their temperature dependence are consistent with observations made with bulk ZnO crystals implying high crystalline and optical quality of the grown films.     

Fourier transform microwave spectroscopy of the reactive intermediate monoiodosilylene,HSiI and DSiI

The pure rotational spectra of three silicon isotopologues of HSiI and two isotopologues of DSiI have been recorded by pulsed-jet Fourier transform microwave (FTMW) spectroscopy. Neon was passed over dry ice cooled H₃SiI or D₃SiI and introduced into the pulsed valve of the FTMW spectrometer. The monoiodosilylenes HSiI and DSiI were produced in situ with a 1000 V DC-discharge nozzle. Only a-type transitions occur in monoiodosilylene from 6 to 26 GHz. We observe K_a = 0 a-type transitions for H²⁸SiI, H²⁹SiI, H³⁰SiI, and D²⁹SiI, and both K_a = 0 and 1 a-type transitions for D²⁸SiI. Rotational constants, centrifugal distortion constants, iodine nuclear quadrupole coupling constants, and nuclear spin–molecular rotation constants were measured.     

Optical delay with spectral hole burning in Doppler-broadened cesium vapor

The full frequency dependence of the optical delay in the Cs D₁ (6 ²S_1/2 ? 6 ²P_1/2) line has been observed, including all four hyperfine split components. Pulse delays of 1.6 ns to 24.1 ns are obtained by scanning across the hyperfine splitting associated with the lower ²S_1/2 state. Optical control of pulse delays in cesium vapor was demonstrated by pumping the D₂ (6 ²S_1/2 ? 6 ²P_3/2) transition and observing resulting holes in the D₁ delay spectrum. For a pump at four times the saturation intensity, the pulse delays are reduced by a maximum of 78% in a narrow region of 110 MHz. The frequency dependence of the delays of the probe laser in the vicinity of the spectral holes agrees with a Kramers–Kronig model prediction.     

Line lists for H218O and H217O based on empirical line positions and ab initio intensities

New line lists for isotopically substituted water are presented. Most line positions were calculated from experimentally determined energy levels, while all line intensities were computed using an ab initio dipole moment surface. Transitions for which experimental energy levels are unavailable use calculated line positions. These line lists cover the range 0.05–20 000 cm^?1 and are significantly more complete and potentially more accurate than the line lists available via standard databases. All lines with intensities (scaled by isotopologue abundance) greater than 10^?29 cm/molecule at 296 K are included, augmented by weaker lines originating from pure rotational transitions. The final line lists contain 39 918 lines for H₂¹⁸O and 27 546 for H₂¹⁷O and are presented in standard HITRAN format. The number of experimentally determined H₂¹⁸O and H₂¹⁷O line positions is, respectively, 32 970 (83% of the total) and 17 073 (62%) and in both cases the average estimated uncertainty is 2×10^?4 cm^?1. The number of ab initio line intensities with an estimated uncertainty of 1% is 16 621 (42%) for H₂¹⁸O and 13 159 (48%) for H₂¹⁷O.     

Comparative PL study of individual ZnO nanorods,grown by APMOCVD and CBD techniques

The photoluminescence properties of individual ZnO nanorods, grown by atmospheric pressure metalorganic chemical vapor deposition (APMOCV) and chemical bath deposition (CBD) are investigated by means of temperature dependent micro-PL. It was found that the low temperature PL spectra are driven by neutral donor bound exciton emission D⁰X, peaked at 3.359 and 3.363 eV for APMOCVD and CBD ZnO nanorods, respectively. The temperature increase causes a red energy shift of the peaks and enhancement of the free excitonic emission (FX). The FX was found to dominate after 150 K for both samples. It was observed that while APMOCVD ZnO nanorods possess a constant low signal of visible deep level emission with temperature, the ZnO nanorods grown by CBD revealed the thermal activation of deep level emission (DLE) after 130 K. The resulting room temperature DLE was a wide band located at 420–550 nm. The PL properties of individual ZnO nanorods can be of importance for their forthcoming application in future optoelectronics and photonics.     

The photoluminescence characterization of the N-doped ZnO films produced by wet chemical deposition

The ZnO:N films are prepared by a wet chemical method. The temperature-dependent photoluminescence (PL) is used to investigate those ZnO: N films. Due to the introduction of nitrogen atoms into ZnO film, another phase appears in the ZnO film, which can release the stress and improve the film quality. As a result, a neutral donor-bound exciton (D⁰X) emission peak is shown in low temperature PL spectrum. With the increasing temperature, the D⁰X line gradually loses its intensity and shifts to 3.30 eV, which is consistent with the well-known conversion from bound exciton to free exciton at elevated temperatures. Then, due to the thermal quenching effect, the D⁰X line vanishes in room temperature. In addition, no shift is shown in the location of visible band emission and only the intensity decreases with the increasing temperature.     

Excited state dynamics and energy transfer rates in Sr3Tb0.90Eu0.10(PO4)3

The emission spectrum of neat Sr₃Tb(PO₄)₃ upon excitation at 337 nm in the levels above ⁵D₃ is dominated by ⁵D₄ emission and no significant emission from ⁵D₃ is observed due to efficient cross relaxation involving the Tb³⁺ levels. On the other hand, the emission spectrum of the same host containing 10 mol% Eu³⁺ upon excitation at the same wavelength (in the Tb³⁺ levels) is dominated by strong emission bands from the ⁵D₀ level of Eu³⁺. This clearly indicates that Tb³⁺→Eu³⁺ energy transfer is present. The excitation spectrum of the Eu^{3+ 5}D₀ emission is dominated by Tb³⁺ bands extending in the UV region.The presence of 10 mol% Eu³⁺ in Sr₃Tb(PO₄)₃ very strongly shortens the ⁵D₄ decay time. The decay curve is not far from exponential, indicating that the energy transfer to Eu³⁺ is accompanied by fast energy migration. The transfer regimes are identified and the donor–donor and donor–acceptor transfer microparameters are quantified under the assumption of electric dipole–electric dipole interactions.     

Spectroscopic properties of Co2+: ZnAl2O4 nanocrystals in sol–gel derived glass–ceramics

Transparent glass–ceramics containing zinc–aluminum spinel (ZnAl₂O₄) nanocrystals doped with tetrahedrally coordinated Co²⁺ ions were obtained by the sol–gel method for the first time. The gels of composition SiO₂–Al₂O₃–ZnO–CoO were prepared at room temperature and heat-treated at temperature ranging 800–950 °C. When the gel samples were heated up to 900 °C, ZnAl₂O₄ nanocrystals were precipitated. Co²⁺ ions were located in tetrahedral sites in ZnAl₂O₄ nanocrystals. X-ray diffraction analysis shows that the crystallite sizes of ZnAl₂O₄ crystal become large with the heat-treatment temperature and time, and the crystallite diameter is in the range of 10–15 nm. The dependence of the absorption and emission spectra of the samples on heat-treatment temperature were presented. The difference in the luminescence between Co²⁺ doped glass–ceramic and Co²⁺ doped bulk crystal was analysed. The crystal field parameter D_q of 423 cm⁻¹ and the Racah parameters B of 773 cm⁻¹ and C of 3478.5 cm⁻¹ were calculated for tetrahedral Co²⁺ ions.     

Synthesis and photoluminescence properties of YVO4:Eu3+, Al3+ phosphor

The Y_0.95?xAl_xVO₄:5%Eu³⁺ (0≤x≤0.1) phosphors were successfully synthesized by solid state reaction at 900 °C for 6 h, and their luminescence properties were investigated under UV and VUV excitation. Monitoring at 619 nm, a strong broad absorption was enhanced by co-doping of Al³⁺ into the YVO₄:Eu³⁺ lattices at 256 nm under UV excitation. The VUV excitation spectra also showed the enhanced excitation bands at about 156 and 200 nm. Under 254 or 147 nm excitation, it was found that Y_0.95?xAl_xVO₄:Eu³⁺(0≤x≤0.1) phosphors showed strong red emission at about 619 nm corresponding to the electric dipole ⁵D₀^–7F₂ transition of Eu³⁺. The improvement of luminescence intensity of YVO₄:Eu³⁺ was also observed after partial substituting Y³⁺ by Al³⁺ and the optimal luminescence intensity appeared with incorporation of 2.5 mol% Al³⁺.