Antireflection structures written by excimer laser on CVD diamond

Two-dimensional antireflective periodical microstructures for the IR range are fabricated on the surface of CVD diamond films. These structures are created using an ArF excimer laser (λ=193 nm) and a direct writing scheme consisting of a beam collimator and a microscope objective to focus the beam onto the sample. Two different arrays are investigated. One has a spacing of 3 μm and is produced with single shots and the other one has a spacing of 4 μm and is produced with three shots per spot. The hole depth and shape are measured with an atomic force microscope (AFM). The optical transmittance and the scattering properties of the structure at 10.6 μm are reported for a CO₂ laser beam. With a spectrometer further transmission measurements in the range of 5 to 20 μm are performed. Received: 16 September 1999 / Accepted: 11 October 1999 / Published online: 24 March 2000     

Early stages of laser graphitization of diamond

A mechanism for photographitization of a free diamond surface is proposed. The quantum-kinetic rate of this process is determined. The graphitization rate is close to zero if the activation energy of the graphitization process is taken as being equal to the binding energy of a carbon atom with the surface (i.e. equal to the sublimation energy of a carbon atom). On the contrary, if the activation energy is close to the energy of C–C bonds, the graphitization process may occur at a noticeable rate and be observed under ‘relatively smooth’ experimental conditions. The temperature rise leads to a considerable increase in the graphitization rates. Preliminary experimental data on the low-rate laser ablation of diamond are presented to support the proposed model of photographitization. An early stage of laser-induced graphitization in the bulk of diamond is also considered. It is found that the nucleation of a ‘tiny graphite drop’ is possible in the bulk of the diamond inside the focal area of a laser beam; the ‘graphite drop’ growth causing the appearance of mechanical stresses in the surrounding regions. The maximum size of the graphite drop is determined, which, when exceeded, leads to mechanical damage of the sample and to a change in the mechanism of laser graphitization. An evident mechanical criterion for laser-induced damage of diamond is proposed. Received: 2 October 2002 / Accepted: 5 October 2002 / Published online: 29 January 2003 RID="*" ID="*"Corresponding author. E-mail: stvn@stankin.ru     

Femtosecond laser ablation of silicon–modification thresholds and morphology

We investigated the initial modification and ablation of crystalline silicon with single and multiple Ti:sapphire laser pulses of 5 to 400 fs duration. In accordance with earlier established models, we found the phenomena amorphization, melting, re-crystallization, nucleated vaporization, and ablation to occur with increasing laser fluence down to the shortest pulse durations. We noticed new morphological features (bubbles) as well as familiar ones (ripples, columns). A nearly constant ablation threshold fluence on the order of 0.2 J/cm² for all pulse durations and multiple-pulse irradiation was observed. For a duration of ≈100 fs, significant incubation can be observed, whereas for 5 fs pulses, the ablation threshold does not depend on the pulse number within the experimental error. For micromachining of silicon, a pulse duration of less than 500 fs is not advantageous. Received: 4 December 2000 / Revised version: 29 March 2001 / Published online: 20 June 2001     

Defect capture under rapid solidification of the melt induced by the action of femtosecond laser pulses and formation of periodic surface structures on a semiconductor surface

A theory of defect-strain instability with formation of periodic surface relief in semiconductors irradiated by ultra-short (τ_p=10^-13 s) powerful laser pulses is developed. The period and time of formation of surface relief are calculated. Regimes of multi-pulse laser ablation leading to formation of either a smooth surface or arrays of surface-relief spikes are pointed out and corresponding experimental results are interpreted from the viewpoint of the developed theory. Received: 4 December 2000 / Accepted: 23 July 2001 / Published online: 11 February 2002     

Ultrashort-pulse laser ablation of indium phosphide in air

Ablation of indium phosphide wafers in air was performed with low repetition rate ultrashort laser pulses (130 fs, 10 Hz) of 800 nm wavelength. The relationships between the dimensions of the craters and the ablation parameters were analyzed. The ablation threshold fluence depends on the number of pulses applied to the same spot. The single-pulse ablation threshold value was estimated to be φ_th(1)=0.16 J/cm². The dependence of the threshold fluence on the number of laser pulses indicates an incubation effect. Morphological and chemical changes of the ablated regions were characterized by means of scanning electron microscopy and Auger electron spectroscopy. Received: 30 May 2000 / Accepted: 31 May 2000 / Published online: 23 August 2000     

Laser-induced periodic surface structures on different poly-carbonate films

Laser-induced periodic surface structures (LIPSS) were generated on oriented and amorphous thick, as well as on spin-coated thin, poly-carbonate films by polarized ArF excimer laser light. The influence of the film structure and thickness on the LIPSS formation was demonstrated. Below a critical thickness of the spin-coated films the line-shaped structures transformed into droplets. This droplet formation was explained by the laser-induced melting across the whole film thickness and subsequent de-wetting on the substrate. The thickness of the layer melted by laser illumination was computed by a heat-conduction model. Very good agreement with the critical thickness for spin-coated films was found. The original polymer film structure influences the index of refraction of the thin upper layer modified by the laser treatment, as was proven by the dependence of the structure’s period on the angle of incidence both for ‘s’- and ‘p’-polarized beams. The effect of the original surface roughness – grains in thick films or holes in thin films – was studied using atomic force microscopy. It was shown that the oblique incidence of ‘s’-polarized beams results in an intensity confinement in the direction of the forward scattering and in asymmetrical interference pattern formation around these irregularities. A new, two-dimensional grating-like structure was generated on spin-coated films. These gratings might be used as a special kind of mask. Received: 10 July 2001 / Accepted: 23 July 2001 / Published online: 30 August 2001     

Laser polishing of diamond plates

Results are reported on laser polishing of 150–400-μm-thick free-standing diamond films with either a copper vapor laser (510 nm wavelength) or an ArF excimer laser (193 nm wavelength). Studies were focused on three particular goals. First, we aimed at a choice of optimum conditions for laser polishing of thick diamond films. It was shown that the laser polishing conditions and the resulting surface roughness were controlled by varying the angle of incidence of a scanning laser beam and by polishing time. Second, the laser ablation technique was applied to remove a defective layer from the “substrate” side of the diamond plates in order to reduce optical losses due to absorption in this layer. Third, the structure of the laser-graphitized diamond surface was studied using UV, visible, and IR optical spectroscopy techniques in the course of the “step-by-step” oxidative removal of the graphitic layer with increasing temperature of the oxidation in ambient air. Once the graphitic layer was removed, the optical transmission in the UV-visible-IR spectral range of the diamond films polished under optimum conditions was measured and compared with the optical transmission of the mechanically polished diamond films. It was shown that the optical quality (in the long-wave infrared region) of the laser-polished diamond plates was sufficient to reach the transmittance value very close to the theoretical limit. Received: 20 October 1998 / Accepted: 8 March 1999 / Published online: 5 May 1999     

Laser-induced back-side wet etching of fused silica with an aqueous solution containing organic molecules

The laser-induced back-side wet etching of fused silica with aqueous solutions of pyranine (8-hydroxy-1,3,6-pyrenetrisulfonic acid trisodium salt) is reported. KrF and XeF excimer lasers were employed as light sources. Well-defined line-and-space and grid micropatterns, free of debris and microcracks, were obtained. Compared with other organic solutions, the aqueous pyranine etching medium etches more slowly but produces a higher quality etched surface. With the KrF laser, the etch rate ranged from 0.02 to 0.12 nm pulse^-1, depending on the dye concentration and the fluence of the laser. The etch rate decreased dramatically when the XeF laser was employed, which was partially attributed to the lower absorption efficiency of the aqueous pyranine solution at the XeF laser wavelength. Received: 20 November 2001 / Accepted: 21 November 2001 / Published online: 2 May 2002     

Dynamic ablation studies of sub-micron gratings on metals with sub-picosecond time resolution

Received: 27 July 1998/Accepted: 28 July 1998     

Laser-induced high-quality etching of fused silica using a novel aqueous medium

Laser-induced backside wet etching of fused-silica plates using an aqueous solution of naphthalene-1,3,6-trisulfonic acid trisodium salt (Np(SO₃Na)₃) is reported. A KrF excimer laser was employed as a light source. The etch rate varied greatly with the concentration of the solution and the laser fluence. For lower concentration solutions, the etch rate increased linearly with laser fluence. For highly concentrated solutions, however, the etch rate increased abruptly at higher fluence. Well-defined line-and-space and grid micropatterns were fabricated using a low etch rate. The etched surface was as flat as the surface of the virgin plates and the etched pattern was free of debris and microcracks. The formation and propagation of shockwaves and bubbles in the solution during the etch process were monitored. High pressure, as well as the high temperature generated by the photothermal process, plays a key role in the etching process. Received: 8 April 2002 / Accepted: 12 April 2002 / Published online: 19 July 2002     

Laser etching of transparent materials at a backside surface adsorbed layer

The laser etching using a surface adsorbed layer (LESAL) is a new method for precise etching of transparent materials with pulsed UV-laser beams. The influence of the processing parameters to the etch rate and the surface roughness for etching of fused silica, quartz, sapphire, and magnesium fluoride (MgF₂) is investigated. Low etch rates of 1 nm/pulse and low roughness of about 1 nm rms were found for fused silica and quartz. This is an indication that different structural modifications of the material do not affect the etching significantly as long as the physical properties are not changed. MgF₂ and sapphire feature a principal different etch behavior with a higher etch rate and a higher roughness. Both incubation effects as well as the temperature dependence of the etch rate can be interpreted by the formation of a modified near surface region due to the laser irradiation. At repetition rates up to 100 Hz, no changes of the etch rate have been observed at moderate laser fluences.     

Angular laser cleaning for effective removal of particles. from a solid surface

Laser removal of small particles from a metal surface is carried out by changing the incident angle of the laser beam. It has been found that a dramatic improvement of cleaning efficiency in terms of area and energy is observed when using the laser at glancing angle of incidence as compared to perpendicular. Furthermore substrate damage is greatly reduced and probably eliminated at glancing angles. The process mechanism is discussed by considering the adhesion and the laser-induced cleaning forces for different incident angles. It is shown that there are different laser–matter interactions operating. Received: 25 April 2000 / Accepted: 9 May 2000 / Published online: 5 October 2000     

In situ reflectivity investigations of solid/liquid interface during laser backside etching

In situ reflectivity measurements of the solid/liquid interface with a pump-probe setup were performed during laser-induced backside wet etching (LIBWE) of fused silica with KrF excimer laser using toluene as absorbing liquid. The intensity, the temporal shape, and the duration of the reflected light measured in dependence on the laser fluence are discussed referring to the surface modification and the bubble formation.The vaporisation of the superheated liquid at the solid interface causes a considerable increase of the reflectivity and gives information about the bubble lifetime. The alterations of the reflectivity after bubbles collapse can be explained with the changed optical properties due to surface modifications of the solid surface. Comparative studies of the reflectivity at different times and the etch rate behaviour in dependence on the laser fluence show that the in situ measured surface modification begins just at the etch threshold fluence and correlates further with etch rate behaviour and the etched surface appearance. The already observed surface modification at LIBWE due to a carbon deposition and structural changes of the near surface region are approved by the changes of the interface reflectivity and emphasizes the importance of the modified surface region in the laser-induced backside wet etching process.     

Polarization effects in ultrashort-pulse laser drilling

A strong influence of the polarization of the laser radiation on the geometry of laser-machined microdrillings has been observed for ultrashort pulses. For drillings with a certain aspect ratio, reflections at the hole walls take place, leading to a non-uniform intensity distribution deep inside the formed hole. Experimental and theoretical results on this subject are discussed. It is shown that a rotation of the polarization during the drilling process (“polarization trepanning”) significantly improves the quality of the produced holes. Received: 21 August 1998 / Accepted: 25 November 1998 / Published online: 17 March 1999     

Influence of laser fluence and irradiation timing of F2 laser on ablation properties of fused silica in F2-KrF excimer laser multi-wavelength excitation process

A collinear irradiation system of F₂ and KrF excimer lasers for high-quality and high-efficiency ablation of hard materials by the F₂ and KrF excimer lasers’ multi-wavelength excitation process has been developed. This system achieves well-defined micropatterning of fused silica with little thermal influence and little debris deposition. In addition, the dependence of ablation rate on various conditions such as laser fluence, irradiation timing of each laser beam, and pulse number is examined to investigate the role of the F₂ laser in this process. The multi-wavelength excitation effect is strongly affected by the irradiation timing, and an extremely high ablation rate of over 30 nm/pulse is obtained between -10 ns and 10 ns of the delay time of F₂ laser irradiation. The KrF excimer laser ablation threshold decreases and its effective absorption coefficient increases with increasing F₂ laser fluence. Moreover, the ablation rate shows a linear increase with the logarithm of KrF excimer laser fluence when the F₂ laser is simultaneously irradiated, while single KrF excimer laser ablation shows a nonlinear increase. The ablation mechanism is discussed based on these results. Received: 16 July 2001 / Accepted: 27 July 2001 / Published online: 2 October 2001     

Formation of conical microstructures upon laser evaporation of solids

The formation and development of the large-scale periodic structures on a single crystal Si surface are studied upon its evaporation by pulsed radiation of a copper vapor laser (wavelength of 510.6 nm, pulse duration of 20 ns). The development of structures occurs at a high number of laser shots (∼10⁴) at laser fluence of 1–2 J/cm² below optical breakdown in a wide pressure range of surrounding atmosphere from 1 to 10⁵ Pa. The structures are cones with angles of 25, which grow towards the laser beam and protrude above the initial surface for 20–30 μm. It is suggested that the spatial period of the structures (10–20 μm) is determined by the capillary waves period on the molten surface. The X-ray diffractometry reveals that the modified area of the Si substrate has a polycrystalline structure and consists of Si nanoparticles with a size of 40–70 nm, depending on the pressure of surrounding gas. Similar structures are also observed on Ge and Ti. Received: 12 February 2000 / Accepted: 28 March 2000 / Published online: 20 June 2001     

Practical uses of femtosecond laser micro-materials processing

We describe several approaches to basic femtosecond machining and materials processing that should lead to practical applications. Included are results on high-throughput deep hole drilling in glasses in ambient air, and precision high-speed micron-scale surface modification of composite materials and chalcogenide glasses. Ablation of soda-lime silicate glass and PbO lead-silicate is studied under three different sets of exposure conditions, for which both the wavelength and pulse duration are varied. Ablation rates are measured below and above the air ionization threshold. The differences observed are explained in terms of self-channeling in the ablated hole. Fabrication of practical devices such as waveguides and gratings is demonstrated in chalcogenide glass. Received: 11 December 2002 / Accepted: 20 January 2003 / Published online: 28 May 2003 RID="*" ID="*"Corresponding author. Fax: +1-407/8233-570, E-mail: mrichard@mail.ucf.edu     

Effect of vapor attenuation in surface ablation of cobalt by pulsed UV laser

Numerical calculations based on a thermal model were presented, which describe the process of target heating and ablation of cobalt during irradiation by 30-ns laser pulses at 308 nm. The attenuation of laser by vapor has been taken into account in this model. As results of the calculations, the temperature distribution beneath the target surface and the temporal evolution of surface temperature were given. The dependence of ablation rate on laser fluence was also studied based on this model. The surface ablation of cobalt with pulsed excimer laser was investigated experimentally. Our model considering proper vapor attenuation has shown to be in good agreement with the experimental results. Received: 20 January 2000 / Accepted: 13 March 2000 / Published online: 5 July 2000     

Effects of evolving surface morphology on yield during focused ion beam milling of carbon

We investigate evolving surface morphology during focused ion beam bombardment of C and determine its effects on sputter yield over a large range of ion dose (10¹⁷-10¹⁹ ions/cm²) and incidence angles (Θ = 0-80°). Carbon bombarded by 20 keV Ga⁺ either retains a smooth sputtered surface or develops one of two rough surface morphologies (sinusoidal ripples or steps/terraces) depending on the angle of ion incidence. For conditions that lead to smooth sputter-eroded surfaces there is no change in yield with ion dose after erosion of the solid commences. However, for all conditions that lead to surface roughening we observe coarsening of morphology with increased ion dose and a concomitant decrease in yield. A decrease in yield occurs as surface ripples increase wavelength and, for large Θ, as step/terrace morphologies evolve. The yield also decreases with dose as rippled surfaces transition to have steps and terraces at Θ = 75°. Similar trends of decreasing yield are found for H₂O-assisted focused ion beam milling. The effects of changing surface morphology on yield are explained by the varying incidence angles exposed to the high-energy beam.     

Growth of active Nd-doped YAP thin-film waveguides by laser ablation

3 (YAP) thin films as a promising material for application in a planar waveguide laser has been studied. The films have been grown on sapphire(0001) and YAP(001) substrates by laser ablation. The influence of the substrate temperature and ambient oxygen pressure on the crystalline structure, concentration of Nd incorporated into films, and consequent luminescence spectra were investigated. The waveguiding properties were observed and refractive index of the films was evaluated. Received: 8 February 1998/Accepted: 9 February 1998