Investigations for Sn diffusion in Pb1−xSnxTe and PbTe

By annealing Pb_1−xSn_xTe and PbTe isothermally in a quartz ampoule Sn diffused from Pb_1−xSn_xTe into PbTe. The profiles obtained have been investigated by means of an electron beam microanalyser, and the coefficients of diffusion have been determined at various temperatures. The diffusion of Sn can be explained by the expressions: D_PbSnTe = 1.5 · 10⁻¹ exp (−1.8 eV/kT) cm² s⁻¹ (0,14 < x < 0,18) D_PbTe = 5,5 · 10⁻⁴ exp (−1.5 eV/kT) cm² s⁻¹. N-type layers are observed at the surface of Pb_1−xSn_xTe specimens.     

Germanium Incorporation in Ga1–xInxAs LPE Layers and GaAs Bulk Crystals

Atomic absorption spectroscopy (AAS) is used to determine the Ge concentration in Ga_1–xIn_xAs and GaAs. The orientation dependence of Ge incorporation in (111)A-and (111)B oriented samples has been studied. The distribution coefficients for both the orientations were determined to be k_Ge^(111)A = 2.6 · 10⁻² and k_Ge^(111B = 1.4 · 10⁻² for Ga_1–xIn_xAs with 0 ≦ x ≦ 0.13. The differences between the two orientations are explained with the aid of the band bending model. Doping gradients in thick epitaxial layers and along crystal length of polycristalline TGS-grown GaAs ingots have been investigated too. In Ga_1–xIn_xAs layers any Ge concentration gradient couldn't be observed, but in TGS compact crystals Ge concentration increases with crystal length because the melt composition changes significantly during solidification. The results are compared with those of electrical measurements.     

Isomorphous substitution and luminescence properties of haloapatites synthesized by the low-temperature method

Single-phase polycrystalline fluorapatites of the Ca_{10 − x} Me _x (PO₄)₆F₂:Eu³⁺ (Me = Pb, Mg) composition are obtained by deposition from aqueous solutions. The effect of modifier ions (Pb²⁺, Mg²⁺) with significantly different ionic radii on the structure and spectral luminescence properties of the fluorapatites are studied. It is established that Pb²⁺ and Mg²⁺ ions affect the preferred location of Eu³⁺ ions in the structure of Ca_{10 − x} Me _x (PO₄)₆F₂ crystals.     

Magnetic and electric properties of the ternary alloys AB

The results of experimental studies of the electrophysical and magnetic properties of solid solutions based on the AB compounds with anion (Zn₃(P_xAs_1−x)₂ and cation (Zn_xCd_1−x)₃ P₂ substitution are reported. The Zn₃(As_xP_1−x)₂ solid solutions are characterized by p-type conductivity (∼ 10¹⁵  10¹⁷ cm⁻³), low Hall mobility and conductivity of ∼ 10⁻² — 10⁻³ ohm⁻¹ cm⁻¹. In the (Zn_xCd_1−x)₃P₂ solid solutions the samples rich in zinc are p-type, those rich in cadmium — n-type, the carrier concentration is ∼ 10¹⁶ — 10¹⁸ cm⁻³. From the measurements of the magnetic properties of the above mentioned alloys it is shown that in the investigated solid solutions a transition from the structure with direct optical transition to those with indirect optical transition occurs.     

Low‐Temperature Raman Scattering Spectra of GaSexS1‐x Layered Mixed Crystals

Raman scattering has been used to study the vibrational spectra of GaSe_xS_1‐x layered mixed crystals at 10 K. We report the frequency dependencies of different modes on composition x, with particular emphasis on A′₁⁽²⁾ (A_1g¹) and A′₁⁽⁴⁾ (A_1g²) intralayer compressional modes having low dispersion in the Brillouin zone. The appearance of additional bands is attributed to multimode behavior typically exhibited by mixed crystals of anisotropic compounds.     

Structure and electrical resistance of thin scandium films (III). Study on electrical properties

The specific resistance-thickness of ScH_x (vacuum 10⁻⁵ to 5 · 10⁻⁶ Torr) and Sc films (vacuum 1 · 10⁻⁸ to 3 · 10⁻⁸ Torr) relationships have been obtained by keeping a record of a film resistance directly in the course of condensation. The results are discussed according to the theory FUCHS -SONDHEIMER (ScH_x, Sc) and MAYADAS -SHATZKES (Sc) assuming a diffuse scattering of the carriers (P = 0) on the external surface of the films. A mean free path of the current carriers is 188 to 355 Å (T ⋍ 300 K) for ScH_x and 400 Å with grain-boundary scattering parameter from 0.1 to 0.3 for Sc. The temperature dependence of specific resistivity of Sc films was obtained in the interval from 300 to 650 K during the annealing in vacuum 5 · 10⁻⁹ Torr.     

Investigation of InxGa1−xAs films grown from thin solution layer

In_xGa_1−xAs films with x⩽0.12 were grown from a thin solution layer between substrates. The calculation of final film thickness as a function of liquid phase composition, based on supposition of film deposition only on the substrate, is in a good agreement with experimental results. The dependences between compositions of liquid and solid phases at 800°, 750° and 700°C were determined. The morphology of the film surface was investigated as a function of liquid phase composition and (100), (111) A, (111) B substrate orientations. Dislocation density increases from 10⁴ cm⁻² to 10⁷ cm⁻² with change of x from 0 to 0.12.     

Substitution effects on ferroelectric,leakage current and anti‐fatigue characteristic of Bi4‐xSbxTi3O12 thin films

Bi_4‐xSb_xTi₃O₁₂ (BSTO) (x = 0, 0.03, 0.04, 0.05, 0.06 and 0.07) thin films have been fabricated on Pt/Ti/SiO₂/Si substrates by sol‐gel method. The effects of various Sb³⁺ content on microstructure and ferroelectric properties of systems are investigated. XRD show that Bi_4‐xSb_xTi₃O₁₂ (x≠0) thin films prefer (117) orientation. The substitution Sb³⁺ for Bi³⁺ reduces the grain size of the film surface. Compared to the BTO (x = 0) film, Bi_4‐xSb_xTi₃O₁₂ films display exciting electric properties. Especially when x = 0.04, the film Bi_3.96Sb_0.04Ti₃O₁₂ has achieved the max 2Pr value of 87μC/cm². This film also has a better anti‐fatigue characteristic, which can be up to 10¹⁰ switching cycles without fatigue. The leakage current density improved with J = 8×10⁻⁸ A/cm².     

Effect of temperature and isomorphic atom substitution on optical absorption edge of TlInS2xSe2(1‐x) mixed crystals (0.25 ≤ x ≤ 1)

The optical properties of the TlInS_2xSe_2(1‐x)mixed crystals (0.25 ≤ x ≤ 1) have been investigated through the transmission and reflection measurements in the wavelength range of 400–1100 nm. The optical indirect band gap energies were determined by means of the analysis of the absorption data. It was found that the energy band gaps decrease with the increase of selenium atoms content in the TlInS_2xSe_2(1‐x)mixed crystals. The transmission measurements carried out in the temperature range of 10–300 K revealed that the rates of change of the indirect band gaps with temperature are γ = –9.2×10^–4 eV/K, –6.1×10^–4 eV/K, –4.7×10^–4 eV/K and –5.6×10^–4 eV/K for TlInS₂, TlInS_1.5Se_0.5, TlInSSe and TlInS_0.5Se_1.5 crystals, respectively. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth of bulk zinc chalcogenide single crystals from the vapour phase and their use for laser screens of projection colour television

Results on ZnSe, ZnSe_xS_1−x and ZnS crystal growing from the vapour phase up to 7.5 cm³ in volume are described. Crystals were grown on sapphire, ZnS, ZnSe_xS_1−x and quartz glass substrates without a contact of the growing crystal with a growth ampoule and using the molten tin as a heating medium. Large high-purity crystals with a density of etch pits of 10³ cm⁻² were obtained They exhibited an effective exciton luminescence and rather high radiation efficiency (30 ± 10% for ZnSe at T = 77 K). This made it possible to use these crystals for fabricating laser screens for a cathode ray tube. The main laser parameters obtained on a ZnSe screen at T = 80 and 300 K using a 75 keV electron beam excitation are presented. The light power output reached 0.8 W at T = 80 K; this allowed to obtain a 10 cd · m⁻² TV image of 1.5 × 2 m² in area.     

Structure and features of the surface morphology of <Emphasis Type="Italic">A</Emphasis><Superscript>4</Superscript><Emphasis Type="Italic">B</Emphasis><Superscript>6</Superscript> chalcogenide epitaxial films

The structure and features of the surface morphology of Pb_{1 − x} Mn _x Se (x = 0.03) epitaxial films grown on freshly cleaved BaF₂(111) faces and PbSe_{1 − x} S _x (100) (x = 0.12) single-crystal wafers were investigated by molecular beam condensation and the hot-wall method. It is shown that the epitaxial films, in accordance with the data in the literature for other chalcogenides, grow in the (111) and (100) planes, repeating the substrate orientation. Black aggregates are observed on the film surface of the films grown. The results obtained are compared with the data in the literature and generalized for other chalcogenides: A ⁴ B ⁶:Pb (S, Se, Te); Pb_{1 − x} Sn _x (S, Se, Te); and Pb_{1 − x} Mn (Se, Te). It is established that the formation of black aggregates, which are second-phase inclusions on the surface of epitaxial films obtained by vacuum thermal deposition, is characteristic of narrow-gap A ⁴ B ⁶ chalcogenides.     

Temperature dependences of the optical characteristics of ZnMgSe single crystals

The temperature dependences of the refractive index of wide-gap Zn_{1 − x} Mg _x Se (x ∼ 0.5) single crystals are measured. It is established that, in the temperature range 300–530 K, the value of dn/dT for such crystals grown by the vertical Bridgman method is 9.31 × 10⁻⁵ at λ = 0.63 μm and 5.29 × 10⁻⁵ at λ = 10.6 μm. The obtained values of the coefficients dn/dT for hexagonal Zn_{1 − x} Mg _x Se single crystals are close to the corresponding values for cubic ZnSe single crystals and are much lower than those for hexagonal CdS. Examples of practical application of single crystals of the ZnMgSe substitutional solid solution as a thermostable material for polarization optical elements in the IR range are given.     

Growth process and optical investigations of Nd:NaGd (MoO4)2 crystals with varying content of Nd and Gd

In this paper, [NaGd_1‐xNdx](MoO₄)₂ crystals with x = 0.005–0.05 were grown by Czochralski method at 950 ℃ for 10 hours and subsequently characterized by absorption spectroscopy and fluorescence spectroscopy. The intensity parameters of Nd³⁺ were calculated by Judd‐Ofelt theory, and the relationship between the parameters and Nd³⁺ concentration was analyzed. The results show that with the increasing Nd³⁺ concentration, the oscillator strength, stimulated emission cross‐section, Ω_t and spontaneous transition probability decrease slightly, while the fluorescence lifetime decreases significantly. However, the fluorescence branching ratio is almost unchanged with the increasing Nd³⁺concentration. The [NaGd_1‐xNd_x](MoO₄)₂ crystal with (x = 0.01) possesses the highest quantum efficiency of 88.98%, a good fluorescence line‐width of 23 nm, a large value of σ_em·τ_f up to 0.55 × 10⁻²² cm²·s and a stimulated emission cross‐section up to 3.747 × 10⁻¹⁹ cm² for the transition from ⁴F_3/2 to⁴I_11/2 at 1064 nm. Test results indicate that [NaGd_1‐xNd_x](MoO₄)₂ crystals are an excellent gain media for the solid state laser system.     

Optical properties of thin films of system (As2Se3)80−x(As2Te3)x(SnTe)20 prepared by PLD

Thin amorphous films from system (As₂Se₃)_80−x(As₂Te₃)_x(SnTe)₂₀ were prepared by pulsed laser deposition (PLD) from their bulk glasses and their optical properties were studied by spectral ellipsometry. Spectral dependencies of refractive index, absorption and extinction coefficient and optical gap (1.41–1.66 eV for (As₂Se₃)_80−x(As₂Te₃)_x(SnTe)₂₀ with x = 20 resp. x = 0) were calculated from optical tansmittance, from ellipsometric data by Tauc method. High values of refractive index n₀ (2.49–2.60) and of non-linear χ⁽³⁾ coefficient of index of refraction (4.9–7.5 × 10⁻¹² esu for the glass (As₂Se₃)_80−x(As₂Te₃)_x(SnTe)₂₀ with x = 0 resp. x = 20) made studied thin films of system (As₂Se₃)_80−x(As₂Te₃)_x(SnTe)₂₀ promising candidates for application in optics and optoelectronics.     

Electrical and optical properties of Sn10Sb20−xBixSe70 (0 x 8) glassy films

Chalcogenide glasses are interesting materials due to their infrared transmitting properties and photo-induced effects exhibited by them. Thin films of the glasses Sn₁₀Sb_20−xBi_xSe₇₀ (0 x 8) prepared by melt quenching technique were evaporated in a vacuum better than 10⁻⁵ mbar. Optical transmission spectra of all the deposited films were obtained in a range 400–2500 nm. The optical band gap and the absorption coefficient were calculated from the transmission data and refractive index was calculated using the swanepoel method. The optical band gap initially increases with increase in Bi content (for x = 2) and then decreases sharply for higher Bi concentrations. The refractive index as well as absorption coefficient decrease with increase in wavelength. The dark activation energy initially increases with increase in Bi content and then decreases with further addition.     

Investigation of GaAs—InyGa1−yPzAs1−z–InxGa1−x-As grading heterojunctions formation

The initial stages of growth of GaAs–InGaAsP_var–In_xGa_1−xAs heterostructures (x = 0.1 and 0.17) were investigated for the equilibrium-cooling method of LPE growth. Similar investigations were carried out for GaAs–InGaAsP_var–In_0.05Ga_0.95As heterocompositions, but for the step-cooling technique. The scheme of growing of In_0.17Ga_0.83As films of GaAs substrates with several intermediate buffler InGaAsP_var layers is represented. These heterostructures were shown to have less than 10⁶ cm⁻² dislocation density on the overall area of the film (> 2 cm²).     

Investigation of radiation defects in electron irradiated Hg1−xCdxTe crystals using positron annihilation

The electron characteristics of defects in the initial and electron irradiated Hg_1−xCd_xTe (2–3 MeV, 10¹⁸ cm⁻², 300 K) crystals using the positron annihilation method have been investigated. The data of electric measurements are confirmed on connection of p-type conductivity with vacancy defects of metal sublattice initial crystals Hg_1−xCd_xTe. An analysis of correlation curves of irradiated crystals has shown a possibility of formation of associations of initial defects and radiation damages of vacancy type during radiation process. The presence of narrow component on correlation curves in the region of small angles is associated with formation of positronium states localized in the region of radiation defect complex of vacancy type. Identification of positron-sensitive defects with electrically active radiation induced ones has been carried out according to the results of isochronal annealing of irradiated crystals.     

Effect of change of state of aggregation of impurity on tl and microhardness of KClxBr1–x mixed crystals doped with Ca2+

Microhardness and Thermoluminescence (TL) measurements have been made in KCl_xBr_1–x mixed crystals doped with Ca²⁺ impurity. The variation of hardness in undoped and Ca²⁺ doped KCl_xBr_1–x crystals with quenching temperature is investigated. TL studied of KCl_xBr_1–x crystals doped with Ca²⁺, both in as-grown state and after quenching them from various elevated temperatures indicate that the positions of the glow peak which has been attributed to F-centers is found to depend upon the state of dispersion of impurity.     

Liquid-Phase Epitaxy of (Hg,Cd)Te on CdTe Substrates by a Vertical Dipping Technique

Hg_1−xCd_xTe layers on CdTe substrates were grown from Te-rich melt solutions by a vertical dipping technique using a special quasi-closed system with ground-glass sealing. Results are good reproducibilities of the electrical properties after annealing in Hg-rich atmosphere (p77 ≈ 2 · 10¹⁶ cm⁻³ μ77 ≈ 500 cm² V⁻¹ s⁻¹) and of the x-value, respectively. A horizontal position of the substrate downwards to the melt solution yields, in difference to a vertical one, to homogeneous layer thicknesses. Short meltback steps before growth leads to sharper profiles of composition.     

Static Disorder in Hexagonal Crystal Structures of C60 at 100 K and 20 K

C₆₀ · 2C₈H₁₀ (100 K): hexagonal space group P6₃, a = 23.694(4), c = 10.046(2) Å, V = 4884(2) ų, D_x = 1.903 g cm⁻³, Z = 6, F(000) = 2856, γ(CuKa) = 1.54178 Å, μ = 0.84 mm⁻¹. C₆₀ · 2C₈H₁₀ (20 K): hexagonal space group P6₃, a = 23.67(1), c = 10.02(1) Å, V = 4862(6) ų, D_x = 1.912 g cm⁻³, Z = 6, F(000) = 2856, γ(CuKa) = 1.54178 Å, μ = 0.84 mm⁻¹. The structures were determined by Patterson syntheses and rigid-body refinements. The C₆₀ molecules show two orientations with one molecular centre in common. The solvent molecules are disordered too. Static disorder could not be overcome or influenced by cooling down. A coordination number of 10 was found for the fullerene molecules.