Temperature dependence of doping element incorporation with the chemical vapour deposition epitaxial silicon (VI) SiH4?HCl?PH3?H2 system

From comparing the incorporation behaviour of phosphorus in epitaxial silicon layers deposited from chlorosilane or silane-hydrogen-mixtures, it is theoretically concluded that silane hydrogen chloride-mixtures should behave like chlorosilane mixtures and different hydrogen chloride partial pressures do not influence the dependence of the incorporation of phosphorus on temperature. The theoretical expectation had been confirmed by experiments. For very low layer growth rates, however, there is a partial pressure range of hydrogen chloride, where the temperature dependence of the incorporation of phosphorus increases with rising partial pressure of hydrogen chloride.     

Preparation of Al?Ga?P?As heterostructures

The present paper reports on the results of an investigation of crystallization of multilayer structures with a narrow-gap semiconductor surrounded by two wide-gap ones in the Al-Ga-P-As system on GaAs and GaP substrates. Influence of the lattice parameters' difference on the value of thermal stress in structures with a composition gradient was determined by the bend of structures separated from the substrate. It has been proved that with the P concentration in solid solutions being less than 1% heterojunctions with less tensions than in the Al–Ga–As system are available. A new method of obtaining Al_xGa_1–xP_yAs_1–y solid solutions with the concentration of P proportional to that of Al has been worked out on the basis of which multilayer heterolight-emitting structures have been prepared.     

X-ray powder diffraction investigations of solid solutions with limited miscibility in the KNO3?NH4NO3?H2O system at 298 K

The measurements of crystal lattice parameters (a, b, c) were conducted and the volumes (v) of unit cells of solid solutions forming in the system KNO₃ NH₄NO₃ H₂O at 298 K were calculated. It was established that in this system at 298 K two series of solid solutions were formed: the mNH₄NO₃ · n(KNO₃ · 2 NH₄NO₃) solid solution with the gap of miscibility and the kKNO₃ · l(KNO₃ · 2 NH₄NO₃) solid solution with one-sided limited miscibility.     

Preparation and phase characterization of the SrCl2?EuCl2 and SrCl2?EuCl3 systems

The SrCl₂ EuCl₂ and SrCl₂ EuCl₃ systems were investigated over the full composition ranges by the Guinier powder X-ray diffraction technique. In the strontium chlorideeuropium dichloride system the solubility from the both ends of reactants was found when fast cooling of the melt was used. In the strontium chloride-europium trichloride system a solid solution for the composition region up to 20 mol per cent of EuCl₃ and two new intermediate chlorides, Sr₄EuCl₁₁ and Sr₉Eu₅Cl₃₃, were observed. The compounds crystallize in orthorhombic symmetry with lattice parameters of 7.220(2), 35.15(1), 6.790(4) and hexagonal 12.854(4) and 24.702(8), respectively.     

The Distribution Coefficient of Isomorphous Admixtures for KCI?KBr?H2O,K2SO4?(NH4)2SO4?H2O and KNO3?NH4 NO3?H2O Systems at 298 K

For the systems KCI KBr H₂O, K₂SO₄4-(NH₄)₂H₂O and KNO₃ NH₄NO₃ H₂ O equilibrium investigations have been performed and the distribution coefficients of isomorphous admixtures have been determined. For each solid solution the changes of the distribution coefficient D, the dependencies between the values of the real and ideal distribution coefficients and the directions of energetic changes in these systems during the co-crystallization of isomorphous and isodimorphous admixtures have been discussed.     

Epitaxial Deposition of GaAs in the Ga(CH3)3?AsH3?H2 system (II). Investigations on the Hetero-Epitaxy of GaAs on Ge

Epitaxial GaAs layers have been deposited on (111), (110) and (100) faces of Ge by pyrolysis of Ga(CH₃)₃ AsH₃ H₂. In this paper the influence of growth conditions and the lattice difference of GaAs and Ge on the quality of epitaxial GaAs layers is described and discussed. The epitaxial layers are characterized by chemical etching, X-ray investigations, and by the observation of the surface morphology.     

Stabilization of the melt composition in Ga?Al?Sb?As

In this work we present a new effect of stabilization of the Ga Al Sb As melt composition when it is in contact with the GaAs substrate. It was found that the As content in the Ga Al Sb As melt did not depend on the initial Sb concentration when the liquid phase was formed by saturating the Ga Al Sb melt from the GaAs substrate. This effect is supposed to be due to the change in phase equilibria conditions caused by large lattice mismatch between the substrate and the solid in equilibrium with the liquid.     

Investigations of phase relations in the system CaO?Na2O?K2O?P2O5

The lattice constants of the compound Ca₂NaK(PO₄)₂ have been studied at room temperature using an X-ray powder diffractometer and also in the temperature range from 20 up to 1000 °C by Guinier-Lenné-technology. A hexagonal lattice with the parameters a₀ = 5.4367 Å and c₀ = 7.3125 Å and a cell volume of 187.18 ų has been determined for the high temperature phase, existing from 670 °C upward. At temperatures below 670 °C a superlattice structure is formed by tripling the axis a, a ′, and c so that it results in a hexagonal superlattice structure cell with the lattice constants of a₀ = 16.311 Å and c₀ = 21.939 Å and a cell volume of 5054 ų.     

Crystallographic relations in the Fe?Zn system

The crystallographic relations between the various Fe Zn compounds have been investigated by means of single-crystal X-ray diffraction techniques. These techniques were applied to primary single crystals of each compound upon which after cooling a single crystalline layer of the neighbouring compound richer in zinc was grown. In this way it has been possible to determine relationships in the sequence α – Γ – Γ₁ – δ: No crystallographic relationship could be established for δ–ζ because it proved impossible to grow a single crystalline layer of ζ on δ. The apparently bad compatibility of the two lattices was reflected in the nucleation problems which were always encountered during efforts to grow ζ on δ. The influence of the relationships on the actually observed textures in the δ and ζ layers of hot dip galvanized specimens is discussed.     

Epitaxial Deposition of GaAs in the Ga (CH3)3?AsH3?H2-System (IV) Thermodynamic and Kinetic Considerations

For reactions taking place between the species Ga, As₂, As₄, AsH₃, and H₂, the equilibrium constants were calculated. The discussion indicates that factors other than thermodynamic considerations significantly influence the deposition process. Kinetic investigations demonstrate the importance of the As:Ga proportion that has to apply for perfect layer growth. The mechanism of deposition is in correspondence with a Langmuir-Rideal Model. For high substrate temperatures a homogeneous reaction in the vapour phase can-not be excluded.     

Epitaxial Deposition of GaAs in the Ga(CH3)3?AsH3?H2 System (III) Heteroepitaxy on Isolating Substrates

Epitaxial growth of GaAs has been achieved on CaF₂, α-Al₂O₃ and spinel substrates. X-ray investigations showed well defined relations between layer perfection and the quality of substrate material. The formation of epitaxial layers in pyrolytic deposition processes is discussed in terms of supersaturation and its influence on nucleation and layer growth.     

Vapour Phase Epitaxy of GaxIn1−xAs in the Ga?In?HCl?AsH3?H2-System Using a Mixed Ga/In Source

The mixed crystal composition of Ga_xIn_1−xAs layers is analysed as a function of the composition of a mixed Ga/In source during VPE in the hydride system. Experimental results are compared with thermodynamic calculations. Both thermodynamics of the deposition reactions and thermodynamies of the souree reactions are considered in the calculations.     

Oxygen potentials,stoichiometry, superconducting,and magnetic properties in the Y?Ba?Cu?O system

The relationship between stoichiometry in YBa₂Cu₃O_x and oxygen potential was investigated by barometry and compared with in-situ X-ray diffraction experiments between 300 and 1000 °C (6 < x < 7). The physical properties are influenced even by small deviations in x. Y₂BaCuO₅ was included in the investigations and found to be antiferromagnetic with T_N ≈ 30 K.     

Resistance and Current Density Studies on Plasma Sprayed Coatings of Bi(Pb)?Ca?Sr?Cu?O Superconducting Materials

Plasma spraying is a potential technique for forming flexible tapes from brittle high T_c oxides. It is possible to obtain superconducting Bi(Pb) Ca Sr Cu O coating by suitable heat treatment schedule after spraying. In an effort to get maximum transport current densities (J_c) of the coating, the content of lead and sintering time have been optimised. A J_c value of 200 Amp/cm² is obtained in Bi_1.4Pb_0.6 · Ca₂Sr_1.9Cu₃O_y specimen coated on silver sprayed Fe[(Ag)/Fe] substrate. Remarkable improvement in J_c values up to 694 Amp/cm² is obtained in the same specimen coated on Ca₂Sr_1.9Cu₃O_y sprayed Fe[Ca₂Sr_1.9Cu₃O_y)/Fe] substrate. The observed decrease in J_c(B) curves with increase in magnetic field shows the presence of weak coupling between the grains.