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1.
用无电电镀的化学方法,在VHF-PECVD沉积获得的非晶硅薄膜表面形成镍诱导源,在550℃下退火若干小时,可以诱导产生微米量级的多晶硅晶粒.用此法形成的镍源可以均匀地分布在非晶硅薄膜的表面.非晶硅薄膜上形成晶核的数量取决于镍溶液的浓度、pH值和无电电镀的时间等参量.当成核密度比较低时可以观察到径向晶化现象.用VHF-PECVD非晶硅薄膜作为晶化前驱物,晶化后多晶硅的最大晶粒尺寸可达到90μm.用此多晶硅试制的TFT,获得了良好的器件特性.
关键词:
金属诱导晶化
化学源
多晶硅
薄膜晶体管 相似文献
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以硝酸镍溶液为化学源,对于用不同方法沉积得到的非晶硅膜作晶化前驱物,都能予以不同程度的晶化.用VHF-PECVD方法获得的非晶硅膜作前驱物,易于去氢并更容易晶化.当化学源浓度不同时,晶化效果会存在一定差别,在一定的范围内,溶液浓度越高,晶化后形成的晶粒越大.退火气氛对晶化结果产生某些影响,可以发现,在N2气氛下退火,比在大气下有更好的晶化效果.最后对物理源与化学源作诱导金属的晶化结果进行了比较,结果表明,对诱导金属源而言,化学源显示出更为有效的晶化趋势.
关键词:
金属诱导晶化
多晶硅薄膜
低温制备
退火处理 相似文献
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Crystallization of amorphous silicon beyond the crystallized polycrystalline silicon region induced by metal nickel
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Crystallization of amorphous silicon(a-Si) which starts from the middle of the a-Si region separating two adjacent metal-induced crystallization(MIC) polycrystalline silicon(poly-Si) regions is observed. The crystallization is found to be related to the distance between the neighboring nickel-introducing MIC windows. Trace nickel that diffuses from the MIC window into the a-Si matrix during the MIC heat-treatment is experimentally discovered, which is responsible for the crystallization of the a-Si beyond the MIC front. A minimum diffusion coefficient of 1.84×10~(-9)cm~2/s at 550℃ is estimated for the trace nickel diffusion in a-Si. 相似文献
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本文采用磁控溅射法, 衬底温度500 ℃下在硅衬底上分别制备具有Ge填埋层的a-Si/Ge 薄膜和a-Si薄膜, 并进行后续退火, 采用Raman光谱、X射线衍射、原子力显微镜及场发射扫描电镜等对所制薄膜样品进行结构表征. 结果表明, Ge有诱导非晶硅晶化的作用, 并得出以下重要结论: 衬底温度为500 ℃时生长的a-Si/Ge薄膜, 经600 ℃退火5 h Ge诱导非晶硅薄膜的晶化率为44%, 在相同的退火时间下退火温度提高到700 ℃, 晶化率达54%. 相同条件下, 无Ge填埋层的a-Si薄膜经800 ℃退火5 h薄膜实现晶化, 晶化率为46%. 通过Ge填埋层诱导晶化可使在相同的条件下生长的非晶硅晶薄膜的晶化温度降低约200 ℃. Ge诱导晶化多晶Si薄膜在Si(200)方向具有高度择优取向, 且在此方向对应的晶粒尺寸约为76 nm. 通过Ge诱导晶化制备多晶Si薄膜有望成为制备高质量多晶Si薄膜的一条有效途径. 相似文献
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提出了一种表面修饰的金属诱导晶化方法,以稳定地获得晶粒尺寸均匀的多晶硅薄膜.为在非晶硅表面获得均匀稳定的Ni源,在晶化前驱物表面浸沾Ni盐溶液之前,先旋涂一层表面亲合剂.通过控制Ni盐溶液的浓度,可以获得均匀性较好、晶粒尺寸分布在20—70μm的多晶硅薄膜.该方法的特点是改善了Ni盐溶液在表面的黏附状态,从而可在比常规Ni盐溶液浓度低1—2个数量级的情况下仍能获得大晶粒的多晶薄膜.
关键词:
表面修饰
溶液法金属诱导晶化
多晶硅
均匀性 相似文献
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Scanning photoelectron spectromicroscopy (SPESM) has been used to study nickel metal induced lateral crystallization (Ni-MILC) of amorphous silicon (a-Si) thin films, produced by in situ annealing of vacuum deposited Ni patterned films on a-Si. The spatial variations in the chemical composition of the Ni-MILC of a-Si were directly imaged. High-resolution photoemission spectra of both Si 2p and Ni 3p core levels and valence band were used to evaluate morphological changes and chemical interactions. Our direct spectromicroscopic characterization clearly shows that the Ni-MILC process in UHV leads to the lower crystallization temperature and a faster crystallization speed of a-Si, and a poly-Si film with high-crystallinity can be obtained. A unified mechanism for the enhanced growth rate of the high-crystallinity poly-Si film produced by Ni-MILC in UHV is proposed. 相似文献
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When a charged body passes by the front of an ungrounded metal box such as a box of electronic equipment, an electrostatically induced voltage is generated. The induced voltage can cause malfunctions and failure of the equipment. However, whether a voltage is induced in the metal box by a moving charged body and how much is induced is not clear. In this study, measured induced voltages are compared with values calculated for two capacitance-measuring methods. The results will be helpful to estimate the possibility of malfunction and failure by induced voltage and whether a standard test method should be considered. 相似文献
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Il-Suk Kang Young-Su Kim Hyun-Sang Seo Chi Won Ahn Jun-Mo Yang Wook-Jung Hwang 《Current Applied Physics》2011,11(6):1319-1321
The effect of two-step hydrogenation, consisting of plasma hydrogenation and annealing in hydrogen, on the hysteresis phenomenon of metal-induced unilaterally crystallized silicon thin-film transistors (MIUC-Si TFTs) was investigated. The large hysteresis level of the conventional MIUC-Si TFTs caused a wide variation of the drain current with the previous gate voltage. As the plasma exposure time increased, the plasma hydrogenation commonly used for stability in poly-Si TFTs was found to increase the hysteresis level of MIUC-Si TFTs after a minimum point. This is because plasma-induced damages correlated with unique defects of MIUC-Si such as metal-related weak bonds, are accompanied by passivation. The following annealing repaired the damages. Consequently the hysteresis level was lower, which resulted in a narrower variation of the drain current. 相似文献
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研究了射频驱动精细结构能级跃迁引起的电磁诱导透明(EIT)和电磁诱导吸收(EIA)的转化。通过采用射频场同时驱动激发态和基态精细结构能级跃迁,使系统中出现EIT和EIA。研究结果表明,调谐射频场频率从与基态精细结构能级共振到与激发态精细结构能级共振的过程中,EIT和EIA相互转化,而且射频场的拉比频率取值不同,EIT和EIA的变化规律也不同。 相似文献
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本文基于飞秒激光等离子体丝诱导击穿光谱对土壤重金属Cr元素含量进行了实验研究.利用荧光法对等离子体丝的长度进行测量,给出了在不同焦距聚焦透镜作用下土壤中Cr425.5 nm的谱线强度空间分布,实验给出了Cr元素的定标曲线.实验结果表明,土壤中Cr元素浓度分析测量的相对标准偏差小于5%,土壤中重金属Cr元素的检测极限为7.85 ppm.表明飞秒激光等离子体丝诱导击穿光谱技术在土壤重金属Cr元素含量的定量探测方面是完全可行的. 相似文献
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Guangsheng Fu Zhonghong Zhuang Lijun Yang Li Han Changjiang Wei 《Physics letters. A》2008,372(2):176-180
We study electromagnetically induced absorption (EIA) and transparency (EIT) in an optical-rf two-photon coupling configuration. It is shown that the interference effect due to interacting dark resonances results in an EIA for a resonant two-photon coupling and this EIA is observed to evolve into an EIT when there is a detuning in the two-photon coupling. 相似文献
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本文对准型四能级系统中探测功率展宽效应引起的非线性效应进行了理论研究。准型四能级系统包括三个基态精细结构能级和一个激发态能级,除光学耦合场和探测场分别激励一个基态精细结构能级和激发态能级之间的跃迁外,附加了一个射频驱动场作用于其中一个基态精细结构能级和另一个新的基态精细结构能级之间,并通过与耦合场驱动共同能级建立量子相关性。研究结果表明,在射频驱动场的辅助激励下,探测功率展宽效应不仅可以使EIT的线宽增宽,还能引起吸收曲线中的类色散特性,使EIT最终变化为EIA。 相似文献
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采用磁控溅射法,以镍硅合金为靶,制备了一种适用于金属诱导横向晶化的氧化物镍源——自缓释镍源.该镍源在内部构成和晶化现象上都不同于纯金属镍源.采用该镍源制备低温多晶硅材料,晶化速率不明显依赖于镍源薄膜的厚度,且晶化多晶硅膜内的残余镍量亦可有效降低,可为薄膜晶体管提供宽的工艺窗口.本文对用纯金属镍源所得多晶硅薄膜的晶化率、表面粗糙度、电学特性等与溅射条件的关系进行了研究,并对相应结果进行了讨论.
关键词:
自缓释
金属诱导横向晶化
多晶硅薄膜
低温制备与退火 相似文献