真空紫外区Ar的高次离化光谱的研究

本文报道了波长在2000—194?真空紫外区域内Ar的高次离化光谱工作。观察到相当数量的新谱线,并归属了其中64条,还找到六个新能级,即:ArIV 3s²3p²(³P)3d²F_5/2,7/2, ArIV 3s²3p²(¹D)3d²S_1/2, ArV3s²3p3d关键词：     

Nb XIII离子3d94s2, 3d94s4p, 3d94p2 组态能级结构与跃迁的理论研究

用准相对论Hartree-Fock方法对Nb XIII离子二电子激发组态3d⁹4s², 3d⁹4s4p, 3d⁹4p² 的能级结构做了全面系统的理论计算研究.在对已有研究结果分析的基础上, 运用最小二乘方法对径向积分参数进行了优化计算, 得到了与这些组态有关的电偶极允许跃迁的谱线波长和跃迁概率.计算结果与最新的实验值做了对比分析, 表明本文计算结果是准确的. 研究发现, 波长40.92 nm的谱线, 属于3d⁹4s(¹D)4p²F_7/2–3d⁹ (²D)4s^{2 2}D_5/2 的跃迁谱线, 而不属于3d⁹4s (¹D)4p⁴D_7/2–3d⁹(²D)4s^{2 2}D_5/2 的跃迁谱线, 即上谱项能级为²F_7/2, 而不是⁴D_7/2. 关键词： Nb XIII离子 二电子激发组态 谱线波长 跃迁概率     

低速Xe~(q+)(4≤q≤20)离子与Ni表面碰撞中的光辐射

实验中测量了0.38V_(Bohr)(460 keV)高电荷态Xe~(q+)(4≤q≤20)离子轰击高纯Ni表面发射的400-510 nm光谱.实验结果包括NiⅠ原子谱线,NiⅡ离子谱线,以及入射离子中性化发射的XeⅠ,XeⅡ和XeⅢ谱线.研究了谱线XeⅡ410.419,XeⅢ430.444,XeⅡ434.200,XeⅡ486.254,NiⅠ498.245,NiⅠ501.697,NiⅠ503.502,NiⅠ505.061和NiⅠ508.293 nm的光子产额随着入射离子电荷态的变化.结果表明,入射离子中性化和溅射Ni原子发射谱线的光子产额随着入射离子电荷态的增加而增加,其趋势与入射离子势能一致.     

Hg~+离子5d~(10)6s ~2S_(1/2)→5d~96s~2 ~2D_(5/2)钟跃迁同位素位移和超精细结构的理论研究

本文首先在Dirac-Hartree-Fock近似下理论评估了Hg~+离子5d~(10)6s ~2S_(1/2)→5d~96s~2 ~2D_(5/2)钟跃迁的质量位移(mass shift, MS)和场位移(field shift, FS)在其同位素位移(isotope shift, IS)中的相对贡献,发现MS远小于FS而可以被忽略.在此基础上,通过系统地考虑该原子体系中主要的电子关联效应,计算了这条钟跃迁FS的精确值以及涉及到的上下两个能级的超精细结构常数,并得到了几种稳定汞同位素离子该跃迁的IS和超精细结构分裂.其中,计算的~(199)Hg~+和~(198)Hg~+离子之间的钟跃迁频率偏移与已有实验测量值相比误差为2%左右.最终,本文给出了汞离子7种常见同位素该谱线的绝对频率值,为实验上的谱线测量提供了有效的理论依据.     

NEW AUTOIONIZING STATES NEAR THE FIRST IONIZATION LIMIT OF RARE EARTH ELEMENT Dy

This paper describes the investigation of autoionizing states near the first ionization limit of rare-earth element Dy. The 62, 51, 97 and 25 new autoionizing states resulting from the states of 4f¹⁰(⁵I₈)6s6p(³P⁰₂)³I⁰₇, 4f⁹ (⁶H⁰)5d²(³F)(⁸G⁰)6s⁹G⁰₇, 4f⁹(⁶F⁰)5d6s^{2 7}H⁰₇ and 4f⁹5d6s^{2 7}K⁰₇, respectively, were found by using a laser resonance ionization time-of-flight mass spectrometer (LRI-TOFMS), The photoionization efficiencies for different channels were compared with each other. In addition, the Shore-Fano parameters of autoionizing states were determined by a nonlinear fitting program.     

Dirac R-matrix calculations of photoionization cross sections of Ni XII and atomic structure data of Ni XIII

We performed R-matrix calculations for photoionization cross sections of the two ground state configuration 3s²3p⁵ (²P^o_3/2,1/2) levels and 12 excited states of Ni XII using relativistic Dirac Atomic R-matrix Codes (DARC) across the photon energy range between the ionizations thresholds of the corresponding states and well above the thresholds of the last level of the Ni XIII target ion. Generally, a good agreement is obtained between our results and the earlier theoretical photoionization cross sections. Moreover, we have used two independent fully relativistic GRASP and FAC codes to calculate fine-structure energy levels, wavelengths, oscillator strengths, transitions rates among the lowest 48 levels belonging to the configuration (3s²3p⁴, 3s3p⁵, 3p⁶, 3s²3p³3d) in Ni XIII. Additionally, radiative lifetimes of all the excited states of Ni XIII are presented. Our results of the atomic structure of Ni XIII show good agreement with other theoretical and experimental results available in the literature. A good agreement is found between our calculated lifetimes and the experimental ones. Our present results are useful for plasma diagnostic of fusion and astrophysical plasmas.     

Co,Zn共掺铌酸锂电子结构和吸收光谱的第一性原理研究

利用基于密度泛函的第一性原理的计算方法,研究了Co单掺及Co和Zn共掺LiNbO_3晶体的电子结构和吸收光谱.研究显示,各掺杂体系铌酸锂晶体的带隙均较纯铌酸锂晶体变窄. Co:LiNbO_3晶体禁带宽度为3.32 eV; Co:Zn:LiNbO_3晶体, Zn的浓度低于阈值或达到阈值时,禁带宽度分别为2.87或2.75 eV. Co:LiNbO_3晶体在可见-近红外光波段2.40, 1.58, 1.10 eV处形成吸收峰,这些峰归结于Co 3d分裂轨道的跃迁;加入抗光折变离子Zn~(2+),在1.58, 1.10 eV处的吸收峰增强,可以认为Zn~(2+)与Co~(2+)之间存在电荷转移,使e_g轨道电子减少,但并不影响t_(2g)轨道电子.结果表明,晶体中的Co离子在不同共掺离子下可充当深能级中心(2.40 eV),或可充当浅能级中心(1.58 eV),两种情况下,掺入近阈值的Zn离子均有助于实现优化存储.     

掺Bi离子锗铌酸盐红外发光玻璃的研究

用高温熔融法制备了Bi₂O₃掺杂的(0.9-x) GeO₂-xNb₂O₅-0.1BaO (含量x为摩尔分数, x=0, 0.04, 0.07, 0.1)系列玻璃. 测定了玻璃样品的差热分析(DTA)曲线、吸收光谱、发射光谱及X射线光电子能谱(XPS). 从DTA曲线分析得到玻璃的结晶起始温度与软化温度之差(T_x-T_g)达200℃以上. 吸收光谱中可观察到位于500, 700, 808和1000 nm处的吸收峰, 并随着Nb₂O₅含量x的增加吸收边带发生红移. 在波长为808 nm激光激发下, 观察到发光中心位于1300 nm处、荧光光谱半高宽约为200 nm的宽带发光. 荧光强度随Bi₂O₃掺杂量δ的增加先增强后减弱, 当掺杂量δ达到约0.01时, 荧光强度达到最强. 随着Nb₂O₅含量x从0.04增加到0.1时, 荧光强度逐步减弱. 样品的XPS峰分别位于159.6和164.7 eV, 它们介于Bi³⁺与Bi⁵⁺的特征结合能之间, 因此Bi³⁺与Bi⁵⁺可能同时存在于玻璃基质中. 从XPS及Bi离子的发光特性推断, 宽带的荧光发射可能起因于Bi⁵⁺. 随着Nb₂O₅含量x的增加, 荧光强度逐步减弱. 分析认为, Nb₂O₅取代GeO₂后形成了NbGe缺陷, 需要低价Bi离子进行电子补偿, 因而抑制了Bi⁵⁺形成, 致使荧光强度减弱.     

Relationship between electronic and crystal structure in Cu–Ni–Co–Mn–O spinels: Part B: Binding energy anomaly in Cu photoemission spectrum

In very rare circumstances, X-ray photoemission spectra of copper in spinel oxides exhibit a “negative binding energy shift”. The origin of such an anomalous XPS chemical shift was investigated. A metastable Ni_0.48Co_0.24Cu_0.6+xMn_1.68−xO₄ (0 < x < 0.6) spinel was fabricated at 600 °C using a low-temperature solution technique. The binding energy of the 2p_3/2 level of copper (930.8 eV) is found 1.9 eV lower than that of Cu⁰ (932.7 eV). XPS and EXAFS studies revealed that the post-thermal annealing between 600 and 800 °C undergoes an irreversible cubic-to-tetragonal phase transformation through oxidation–reduction reaction Cu¹⁺ + Mn⁴⁺  Cu²⁺ + Mn³⁺, and only tetrahedral Cu¹⁺ species in the cubic spinel shows this anomalous chemical shift. The negative shift of the core levels was correlated to an equal shift of the Cu 3d valence band levels. XPS valence bands from the samples annealed at different temperatures were compared to DOS calculations. The DOS computations were performed with FEFF-8.1 code using experimental crystal parameters established by the EXAFS analysis. It was found that the tetrahedral Cu¹⁺ in the 600 °C annealed sample exhibits localization of the 3d orbitals showing behavior characteristic to zinc. The completely filled and isolated 3d electron shell appears as a false valence band edge in the XPS spectrum. The position of the Cu 3d, and other core levels, is established by oxygen pinning the Cu valence band levels and by the fixed value of the p–d gap characteristic to the tetrahedral copper environment in this spinel.     

Rh XⅢ—Cd XVI离子4s24p3—4s4p4能级与跃迁的理论计算

用HFR（Hartree-Fock with relativistic corrections）方法对Rb V—Cd XVI离子4s²4p³和4s4p⁴组态能级结构做了全面系统的理论计算研究. 通过分析能级结构参数的HFR理论计算值与基于实验能级拟合得到的计算值之比值随着原子序数Z_c变化的规律,运用广义拟合外推方法预言了这些离子能级结构参数. 由此进一步计算了Rh XⅢ,Pd XIV,Ag XV和Cd XVI离子4s²4p³（⁴S_3/2,²P_1/2,3/2,²D_3/2,5/2）和4s4p⁴（⁴P_1/2,3/2,5/2,²P_1/2,3/2,²D_3/2,5/2,²S_1/2）组态能级以及电偶极跃迁波长与振子强度. 研究表明,对于4s²4p³组态,单组态近似可以得到较满意的结果;而对于4s4p⁴组态,只有在考虑了4s²4p²4d的组态相互作用效应时,计算结果的准确性才能明显得到提高. 同时,本文还运用全相对论grasp2K-DEV程序包计算了Rh XⅢ—Cd XVI离子组态能级. 对于Rh XⅢ离子4s²4p³（²P_1/2）,Pd XIV离子4s²4p³（⁴S_3/2,²P_1/2,3/2,²D_3/2,5/2）和4s4p⁴（²P_1/2,3/2,²D_3/2,5/2,²S_1/2）,能级均无实验值;对于Ag XV和Cd XVI离子,截至目前还没实验能级数据,没有实验能级值的所有数据均仅来自本文的计算数值. 本文计算结果与已有实验值吻合得很好.     

Optical pumping of the 2p3sP0 State of Ne (I = 3/2): g factor and metastability exchange cross section

A C.W. multi-mode dye laser is used to obtain by optical pumping an orientation of the 2p⁵ 3s³P₀ (F = 3/2) state of ²¹Ne. A magnetic resonance experiment leads to the measurement of the g factor g (³P₀) = 3.027 (8) × 10⁻⁴ to be compared with the theoretical prediction (3.025(6) × 10⁻⁴). One obtains also the metastability exchange cross section σ(³P₀) = 18.4 ± 4 Ų for collisions between metastable (³P₀) Ne atoms and ground state Ne atoms. This result is compared with other measurements and theoretical evaluation.     

Comment on “Atomic structure calculations for F-like tungsten” by S. Aggarwal [Chin. Phys B 23(2014) 093203]

Recently, S. Aggarwal [Chin. Phys. B 23 (2014) 093203] reported energy levels, radiative rates, and the lifetimes for the lowest 60 levels belonging to the 2s²2p⁵, 2s2p⁶, and 2s²2p⁴3l configurations of F-like tungsten. There is no discrepancy for his calculated energies for the levels and the radiative rates for the limited number of E1 transitions, but the reported results for the lifetimes are highly inaccurate. According to our calculations, errors in his reported lifetimes are up to 6 orders of magnitude for several levels. Here we report the correct lifetimes for future comparisons and applications, and also explain the reason for the discrepancies.     

ELECTRONIC AND OPTICAL PROPERTIES OF WURTZITE GaN:——A THEORETICAL APPROACH

The band structures of wurtzite GaN(α-GaN) are studied using the nearest and second-nearest neighbour semi-empirical tight-hinding method in sp³ s^* model. The calculated direct fundamental gap of α-GaN is 3.45 eV, which is in good agreement with the experimental data. The density of states and the imaginary pert of dielectric function (ε₂ (ω)) are evaluated to he in the regions - 10.0 - 12 eV and (1.0 - 10.0 eV, respectively. There are mainly three peaks at 6,4, 7,5, 8.4 eV, dominating the ε₂(ω) spectrum. The two components of the ε₂(ω) (i. e. ε_2xy(ω) and ε_2z(ω) ) are also calculated; and the real prat of dielectric function, reflectivity, absorption coefficient, and refractive index are all studied.     

基于自洽GW方法的碳化硅准粒子能带结构计算

在多体微扰理论的框架下, 分别采用G₀W₀方法和准粒子自洽GW方法计算3C-SiC和2H-SiC的准粒子能级. 由一个平均Monkhorst-Pack网格点上的准粒子能级和准粒子波函数出发, 结合最局域Wannier函数插值, 得到3C-SiC和2H-SiC的自洽准粒子能带结构. 3C-SiC的价带顶在Γ点, 导带底在X点. DFT-LDA, G₀W₀和准粒子自洽GW给出的3C-SiC间接禁带宽度分别为 1.30 eV, 2.23 eV和2.88 eV. 2H-SiC价带顶在Γ 点, 导带底在K点. 采用DFT-LDA, G₀W₀和准粒子自洽GW方法得到的间接禁带宽度分别为2.12 eV, 3.12 eV和 3.75 eV. 计算基于赝势方法, 对于3C-SiC和2H-SiC的准粒子自洽GW计算给出的禁带宽度均比实验值略大.     

相对论多组态相互作用方法计算Mg~+离子同位素位移

采用相对论多组态相互作用方法研究了Mg~+离子3s~2S_(1/2)—3s~2P_(1/2)和3s~2S_(1/2)—3s~2P_(3/2)两条跃迁谱线的特殊质量位移系数和场位移因子,并计算了中子数8≤N≤20的Mg~+离子的同位素位移.计算结果与其他理论的计算值符合得比较好,与最新的实验测量结果比较,相对误差在0.13%到0.28%范围,是目前最接近Mg~+离子同位素位移实验测量的理论计算结果.该计算结果可为Mg~+离子同位素位移实验和理论研究提供参考,能够用于Mg~+离子的短寿命同位素的光谱测量实验以及利用Mg~+离子开展幻中子数N=8和N=20附近的奇异原子核特性研究等.所用的计算方法和电子激发模式也可以推广到其他核外电子数为11的多电子体系,用于开展相应的原子光谱结构计算和同位素位移的理论研究.     

H掺杂α-Fe2O3的第一性原理研究

α-Fe₂O₃是一种重要的磁性半导体材料, 在电子器件中应用广泛, 具有重要的研究意义. 本文基于密度泛函理论, 采用GGA+U方法, 应用第一性原理对间隙H掺杂前后的六方相α-Fe₂O₃的晶格常数、态密度、Bader 电荷分布进行了计算分析. 研究了U值对结果的影响, 发现U=6 eV时, 体相α-Fe₂O₃的晶胞平衡体积、Fe原子磁矩、带隙值与实验值最符合. 在选取合适U值后, 第一性原理计算结果表明, H掺杂后, 间隙H部分被氧化, 其最近邻的Fe 和O部分被还原, H和O有一定程度的成键. 在费米面附近, 出现了新的杂化能级, 杂化能级扩展了价带顶的宽度, 同时导带底下移, 引起带隙减小, 表明H掺杂是一种有效的能带结构调控方法.     

Alkali-metal-induced topological nodal line semimetalin layered XN2 (X= Cr,Mo, W)

Based on first principles calculations and the K·p effective model, we propose that alkali metal deposition on the surface of hexagonal XN₂ (X= Cr, Mo, W) nanosheets induces topologically nontrivial phases in these systems. When spin orbit coupling (SOC) is disregarded, the electron-like conduction band from N-p_z orbitals can be considered to cross the hole-like valence band from X-d²_z orbitals, thereby giving rise to a topological nodal line state in lithium-functionalized XN₂ sheets (Li₂MoN₂ and Li₂WN₂). Such band crossing is protected by the existence of mirror reflection and time reversal symmetry. More interestingly, the bands cross exactly at the Fermi level, and the linear dispersion regions of such band crossings extend to as high as 0.9 eV above the crossing. For Li₂CrN₂, the results reveal the emergence of a Dirac cone at the Fermi level. Our calculations show that lattice compression decreases the thickness of a Li₂CrN₂ nanosheet, leading to phase transition to a nodal line semimetal. The evolution of the band gap of Li₂XN₂ at the Γ point indicates that the nontrivial topological character of Li₂XN₂ nanolayers is stable over a large strain range. When SOC is included, the band crossing point is gapped out giving rise to quantum spin Hall states in Li₂CrN₂ nanosheets, while for Li₂MoN₂, the SOC-induced gap at the crossing points is negligible.     

Optically in accessible core excited states of Li and Na

The first observations of a number of optically inaccessible core-excited autoionizing states of lithium and sodium have been made. For example, the (1s2s²)²S and (1s2p²)²D states of Li have excitation energies of 56.31±0.03 and 61.04±0.03 eV, respectively.     

Bismuth oxide thin films prepared by chemical bath deposition (CBD) method: annealing effect

Bismuth oxide thin films have been deposited by room temperature chemical bath deposition (CBD) method and annealed at 623 K in air. They were characterized for structural, surface morphological, optical and electrical properties. From the X-ray diffraction patterns, it was found that after annealing a non-stoichiometric phase, Bi₂O_2.33, was removed and phase pure monoclinic Bi₂O₃ was obtained. Surface morphology of Bi₂O₃ film at lower magnification SEM showed rod-like structure, however, higher magnification showed a rectangular slice-like structure perpendicular to substrate, giving rise to microrods on the surface. The optical studies showed the decrease in band gap by 0.3 eV after annealing. The electrical resistivity variation showed semiconductor behavior and from thermoemf measurements, the electrical conductivity was found to be of n-type.     

BC5力学性质的第一性原理计算

采用平面波赝势密度泛函理论方法对0—60 GPa静水压下BC₅ 六角晶系P3m1和四方晶系I4m2结构的平衡态晶格常数、弹性常数、各向异性以及泊松比与Cauchy扰动进行了研究. 研究结果表明, BC₅的两种结构在高压下是稳定的, 且不可压缩性随着压强的增加而增大. 另外, 对其电子结构也进行了计算, 计算结果表明, BC₅存在一个较宽的带隙, 两种原子间有较强的共价杂化, 材料的性质主要由B的2p¹和C的2p²态电子共同决定. 压强对材料带隙和费米能级附近的态密度几乎没有影响, 只引起微小的漂移, 可推断其很好的高压稳定性.