SIMS STUDY OF OXYGEN SPIRAL DIFFUSION C-TEXTURED Yba2Cu3O7-δ/SrTiO3 EPITAXIAL THIN FILM

Secondary ion mass spectroscopy was used to study the chemical diffusivity of 0¹⁸ in c-textured YBa₂Cu₃O_7-δ/SrTiO₃ epitaxial thin film. By fitting experimental data to the one- dimensional diffusion curve, the apparent diffusivity along the c-axis was obtained to be equal to l.02×10¹⁴cm²/sec when the temperature was 350℃. A computer analysis method was put forward to calculate the "spiral diffusion" process, and the diffusivity anisotopy of films with different mosaic size obtained. For a film of 7000×7000?² mosaic size, Dab was found to be ～3.55×10^-5xexp((-1.03 ev)/kT) cm²/sec. The calculated results reveal that the variation of the results of Dc is not the result of diffusivity anisotropy but of the difference in mosaic size.     

Nuclear fusion from Coulomb explosions of deuterated methane clusters subjected to ultraintense femtosecond laser pulses

This paper reports that Coulomb explosions taken place in the experiment of heteronuclear deuterated methane clusters ((CD₄)₂) in a gas jet subjected to intense femtosecond laser pulses (170mJ, 70fs) have led to table-top laser driven DD nuclear fusion. The clusters produced in supersonic expansion had an average size of about 5nm in radius and the laser intensity used was 3×10¹⁷W/cm².The measured maximum and average energies of deuterons produced in the laser--cluster interaction were 60 and 13.5keV, respectively. From DD collisions of energetic deuterons, a yield of 2.5(±0.4)×10⁴ fusion neutrons of 2.45MeV per shot was realized, giving rise to a neutron production efficiency of about 1.5×10⁵ per joule of incident laser pulse energy. Theoretical calculations were performed and a fairly good agreement of the calculated neutron yield with that obtained from the present experiment was found.     

微波等离子体化学气相沉积合成掺氮金刚石薄膜的缺陷和结构特征及其生长行为

Diamond film was deposited in CH₄ and H₂ gas mixture with a small amount of N₂ by microwave plasma assisted chemical vapor deposition (MPCVD). Scanning electron microscopy, Raman spectroscopy and transmission electron microscopy were applied to characterize the film. The results showed that the growth of grains are different the central region and the edge. In the central region, diamond grains nucleated with a density as high as 4.8×10⁸ cm^-2 and were preferential in 〈001〉 orientation. The inner grains formed an area without stacking faults,which was surrounded by a rim with a high density of stacking faults. A growth model was suggested to interpret the morphological feature and the behavior of preferential growth. At the edge, the grains were identified to be 6H polytypes of diamond and a new twin relationship of grains was found. Besides, the effect of the N dopant on the growth behavior of the diamond film deposited by MPCVD was discussed in connection with the growth rate of the film. 关键词： 金刚石 结构表征 透射电子显微镜 多型金刚石     

Sodium beta-alumina thin films as gate dielectrics for A1GaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

<正>Sodium beta-alumina（SBA） is deposited on AlGaN/GaN by using a co-deposition process with sodium and Al₂O₃ as the precursors.The X-ray diffraction（XRD） spectrum reveals that the deposited thin film is amorphous.The binding energy and composition of the deposited thin film,obtained from the X-ray photoelectron spectroscopy（XPS） measurement,are consistent with those of SBA.The dielectric constant of the SBA thin film is about 50.Each of the capacitance-voltage characteristics obtained at five different frequencies shows a high-quality interface between SBA and AlGaN.The interface trap density of metal-insulator-semiconductor high-electron-mobility transistor（MISHEMT） is measured to be（3.5～9.5）×10¹⁰ cm^-2·eV^-1 by the conductance method.The fixed charge density of SBA dielectric is on the order of 2.7×10¹² cm^-2.Compared with the AlGaN/GaN metal-semiconductor heterostructure high-electronmobility transistor（MESHEMT）,the AlGaN/GaN MISHEMT usually has a threshold voltage that shifts negatively. However,the threshold voltage of the AlGaN/GaN MISHEMT using SBA as the gate dielectric shifts positively from—5.5 V to—3.5 V.From XPS results,the surface valence-band maximum（VBM-E_F） of AlGaN is found to decrease from 2.56 eV to 2.25 eV after the SBA thin film deposition.The possible reasons why the threshold voltage of AlGaN/GaN MISHEMT with the SBA gate dielectric shifts positively are the influence of SBA on surface valence-band maximum （VBM-E_F）,the reduction of interface traps and the effects of sodium ions,and/or the fixed charges in SBA on the two-dimensional electron gas（2DEG）.     

Optical and electrical properties of Sb-doped β-Ga2O3 crystals grown by OFZ method

Sb-doped β-Ga₂O₃ crystals were grown using the optical floating zone(OFZ) method.X-ray diffraction data and X-ray rocking curves were obtained,and the results revealed that the Sb-doped single crystals were of high quality.Raman spectra revealed that Sb substituted Ga mainly in the octahedral lattice.The carrier concentration of the Sb-doped single crystals increased from 9.55 × 10¹⁶ to 8.10 × 10¹⁸ cm^-3,the electronic mobility depicted a dec...     

First-principles investigation of diffusion behaviours of H isotopes:From W(110) surface into bulk and in bulk W

<正>The diffusion behaviours of hydrogen（H）,deuterium（D）,and tritium（T） from W（110） surface into bulk and in bulk W are investigated using first-principles calculations combined with simplified models.The diffusion energy barrier is shown to be 1.87 eV from W（110） surface to the subsurface,along with a much reduced barrier of 0.06 eV for the reverse diffusion process.After H enters into the bulk,its diffusion energy barrier with quantum correction is 0.19 eV. In terms of the diffusion theory presented by Wert and Zener,the diffusion pre-exponential factor of H is calculated to be 1.57×10^-7 m²·s^-1,and it is quantitatively in agreement with the experimental value of 4.1×10^-7 m²·s^-1. Subsequently,according to mass dependence(（1/m）^1/2) of H isotope effect,the diffusion pre-exponential factors of D and T are estimated to be 1.11×10^-7 m²·s^-1 and 0.91×10^-7 m²·s^-1,respectively.     

Study on the interaction of intense femtosecond laser pulses with nanometre-sized hydrogen clusters

The interaction of intense femtosecond laser pulses with hydrogen clusters has been experimentally studied. The hydrogen clusters were produced from expansion of high-pressure hydrogen gas (backed up to 8\tm10⁶Pa) into vacuum through a conical nozzle cryogenically cooled by liquid nitrogen. The average size of hydrogen clusters was estimated by Rayleigh scattering measurement and the maximum proton energy of up to 4.2keV has been obtained from the Coulomb explosion of hydrogen clusters under 2×10¹⁶ W/cm² laser irradiation. Dependence of the maximum proton energy on cluster size and laser intensity was investigated, indicating the correlation between the laser intensity and the cluster size. The maximum proton energy is found to be directly proportional to the laser intensity, which is consistent with the theoretical prediction.     

CALCULATION OF THE FINE STRUCTURE OF OXYGEN-LIKE IONS USING THE POLARIZATION POTENTIAL FUNCTION

We have calculated the forbidden transition energies and magnetic dipole transition probabilities of 2s²2p⁴(³P₁－³P₂) and 2s²2p⁴ (³P₀－³P₁) of oxygen-like isoelectronic sequences (Z=10－32) by a method of polarization potential correction. The transition energies show good agreement with experiment and are much better than the calculations in the literature. These results also illustrate that it is feasible to use the dipole expansion of the polarization potential to deal with some dynamic and non-dynamic effects in the central field approach. The relation of polarizability and cut-off radius with atomic number is discussed. We also give the fitted formula between the polarizability α₁ and atomic number Z as α₁=0.73429-9.56644×10^-4Z+7.43016×10^-5Z^{2-2.53298×10-6Z3+2.08306×10-8Z4.}     

IRREVERSIBILITY LINE AND THERMAL DEPINNING IN YBa2Cu3O7-δ

By measuring magnetic torque moment in a field-sweeping process, the temperature and field dependence of the critical current density j (with a criterion of electric field) and the normalized relaxation rate Q = d lnj/d ln E of a YBa₂Cu₃O_7-δ thin film were obtained. With a minimum current density (j_min = 10A·cm^-2) the irreversibility lines at different sweeping rates were determined. It was found that these irreversibility lines cannot be fitted to either the melting line or the vortex-glass transition. All the data can be interpreted by the thermally-assisted-flux-flow model. Further investigation shows that, at irreversible tem-perature and field, U_c is much smaller than k_BT, which indicates that the thermal depinning is the real origin of the irreversibility line.     

Runaway electrons as a diagnostic of plasma internal magnetic fluctuations

The transport of runaway electrons in a high-temperature plasma is relatively easy to measure in a steady state experiment and a perturbation experiment, which provides runaway electron diffusion coefficient D_r. This diffusion coefficient is determined by internal magnetic fluctuations, so it can be interpreted in terms of a magnetic fluctuation level. The internal magnetic fluctuation level ($\tilde {b}_r/B_T is estimated to be about (2--4)×^-4 in the HL-1M plasma. The results presented here demonstrate the effectiveness of using runaway electron transport techniques to determine internal magnetic fluctuations. A profile of magnetic fluctuation level in the HL-1M plasma can be estimated from D_r.     

LiNbO3和LiTaO3晶体Er3+/Yb3+掺杂水热外延层室温吸收光谱分析

本文引入与浓度和厚度有关的k_NL待定参数, 在J-O理论基础上, 对Er³⁺/Yb³⁺掺杂的LiNbO₃和LiTaO₃单晶衬底上 的多晶水热外延样品进行了基于吸收光谱的拟合计算. LiNbO₃:Ω₂=2.34× 10^-20 cm², Ω₄=0.77× 10^-20 cm², Ω₆=0.31×10^-20 cm², k_NL=4.32× 10^-2 mol·m^-2. LiTaO₃:Ω₂=1.68×10^-20 cm², Ω₄=0.84×10^-20 cm², Ω₆=0.45×10^-20 cm², k_NL=9.17×10^-3 mol· m^-2. 该方法可尝试推广到粉体或胶体等难以直接获得浓度和厚度数据的体系. 经上转换发光测试及光谱参数计分析认为Er³⁺/Yb³⁺离子的掺杂浓度比为1:1的情况下, 样品呈现绿色上转换发光光谱; 可尝试以降低基质声子能量的方法提高⁴I_13/2能级 对²H_11/2和⁴S_3/2能级的量子剪裁效率.     

砷化镓中质子注入之研究

本文中,我们研究了砷化镓中质子注入及退火恢复过程。实验用晶向<100>偏1—3°,掺Sn 5×10¹⁷-1×10¹⁸cm^-3的单晶,室温下质子注入,注入能量E约8×10⁴—2×10⁶eV,用A-B腐蚀剂对注入质子样品的解理面显结,测得质子注入高阻层的纵向深度x_j和径向扩展x_L与注入能量E的定量关系。然后,对注入质子样品,在150—800℃下退火5分钟,用双晶衍射仪研究了样品的应变恢复过程,在静电计上测量了高阻阻值随退火温度的变化。根据实验结果,讨论了砷化镓中质子注入的射程R_p,电子阻止本领S_n(E)和核阻止本领S_e(E),以及质子注入形成高阻和退火恢复的机理。 关键词：     

Oxygen tracer diffusion in La1 − xSrxCoO3

Tracer diffusion of ¹⁸O in dense, polycrystalline La_1−xSr_xCoO₃ for x = 0.1 has been measured in the temperature range 400 to 600 °C and at 500 °C for x = 0.2 at an oxygen partial pressure of 1 × 10⁵ Pa. Depth profiles were obtained by secondary ion mass spectrometry. The diffusion coefficient for La_0.9Sr_0.1CoO₃ is given by D = (17–247) exp[(−232 ± 8 kJ/mole)/RT] cm²/s. This value is several orders of magnitude lower than D extrapolated from the results for x = 0.2 measured in the 700–900 °C temperature range. One possible explanation for the discrepancy is that the two measurements reflect different diffusion paths. As expected, La_0.8Sr_0.2CoO₃ exhibits a higher diffusivity at 500 °C than does La_0.9Sr_0.1CoO₃.     

Studies of Bs^0 → η＇η＇ Decays in pQCD Approach

We calculate the CP averaged branching ratios and CP-violating asymmetries for Bs^0 → η＇η＇ and η＇η＇ decays in the perturbative QCD （pQCD） approach here. The pQCD predictions for the C P-averaged branching ratios are Br（Bs^0 → ηη）=（14.2-7.5^＋18.0） ×10^-6,Br（Bs^0 → ηη＇）=（12.4-7.0^＋18.2）×10^-6,and Br（Bs^0 → η＇η＇） =（9.2-4.9^＋15.3）×10^-6, which agree well with those obtained by employing the QCD factorization approach and also be consistent with available experimental upper limits. The gluonic contributions are small in size： less than 7% for Bs →ηηand ηη＇ decays, and around 18% for Bs →η＇η＇ decay. The CP-violating asymmetries for three decays are very small： less than 3% in magnitude.     

Eu3+掺杂钛酸钇晶态薄膜的制备与高效红色荧光发射

采用溶胶-凝胶法制备了Eu³⁺掺杂的钛酸钇晶态发光薄膜。通过X射线衍射(XRD)对薄膜的结构和结晶过程进行了分析,利用荧光分光光度计对薄膜的发光性质开展了测试和研究。XRD结果表明,薄膜包含立方相Y_xTi_1-xO_1-0.5x晶粒,该晶粒属立方晶系,Fm3m(225)空间群,晶胞参数a=0.530nm,晶粒尺寸约为17nm。荧光光谱表明,Eu³⁺掺杂的Y_xTi_1-xO_1-0.5x薄膜显示了强的红光发射,其中Eu³⁺的⁵D₀→⁷F₂超灵敏跃迁为最强一组。紫外氙灯、准分子激光器、汞灯等是这种发光薄膜的有效激发源。     

Intensities and spectral features of the ~4I_(13/2)-~4I_(15/2) potential laser transition of Er~(3+) centers in CaF_2-CeF_3 disordered crystal

A CaF_2-CeF_3 disordered crystal containing 1.06% of Er~(3+) ions was grown by the temperature gradient technique.Optical absorption and emission spectra recorded at room temperature and at 10 K, luminescence decay curve recorded at room temperature, and extended x-ray-absorption fine structure spectra were analyzed with an intention to assess the laser potential related to the ~4I_(13/2)→~4I_(15/2) transition of Er~(3+). In addition, the thermal diffusivity of the crystal was measured at room temperature. The analysis of room-temperature spectra revealed that the ~4I_(13/2) emission is long-lived with a radiative lifetime value of 5.5 ms, peak emission cross section of 0.73 × 10~(-20) cm~2, and large spectral width pointing at the tunability of the emission wavelength in the region stretching from approximately 1480 nm to 1630 nm. The energies of the crystal field components for the ground and excited multiplets determined from low-temperature absorption and emission spectra made it possible to predict successfully the spectral position and shape of the room-temperature ~4I_(13/2)→~4I_(15/2) emission band. Based on the correlation of the optical spectra and dynamics of the luminescence decay, it was concluded that in contrast to Yb~(3+) ions in heavily doped CaF_2 erbium ions in the CaF_2-CeF_3 crystal reside in numerous sites with dissimilar relaxation rates.     

Tm3+,Yb3+共掺钨酸钙多晶材料的上转换发光及荧光温度特性

采用高温固相法制备了Tm³⁺,Yb³共掺CaWO₄多晶材料. 980 nm二极管激光器激发下,在可见区获得了¹G₄→³H₆,¹G₄→³H₄,³H₂,³H₃→³H₆ 跃迁产生的上转换荧光. 讨论了Yb³⁺ 离子浓度的变化对Tm³⁺ 的上转换发光强度的影响,同时根据荧光强度比的方法研究了689 和705 nm 红色上转换荧光在313–773 K 范围内的温度特性. 结果表明：基于Tm³⁺,Yb³⁺ 共掺CaWO₄ 多晶材料的红色上转换荧光可以实现温度监测,其测温的最大灵敏度值为5.7×10^-4 K^-1,相应的测量温度为458 K. 关键词： 上转换发光 3+')" href="#">Tm³⁺ 钨酸钙 荧光温度传感     

新型透明导电薄膜ErF3掺杂In2 O3的研制

利用电子束沉积技术首次制备了氟化铒 (ErF₃) 掺杂的氧化铟(In₂O₃)透明导电薄膜(IEFO),研究了薄膜的晶体结构、光学特性和电学特性。利用原子力显微镜测试了不同厚度薄膜的形貌,初步研究了薄膜的生长过程。研究发现:IEFO薄膜为多晶结构,Er原子的掺入改变了薄膜的优势生长方向,使薄膜在(211)、(222)、(444)3个方向上的生长趋势基本相同。 薄膜电阻率为1.265×10^-3 Ω·cm,电子迁移率为45.76 cm²·V^-1·s^-1,电子浓度为1.197×10²⁰ cm^-3,在380~780 nm范围内的可见光平均透过率为81%。     

Gd3+,Yb3+和Tm3+共掺杂氟化物纳米晶中Yb3+-Tm3+-Gd3+间的能量传递

用水热法合成了Y_0.8-x-yF₃∶Gd_x³⁺,Yb_0.2³⁺,Tm_y³⁺纳米晶的上转换发光材料。在典型的Y_0.595F₃∶Gd_0.200³⁺,Yb_0.200³⁺, Tm_0.005³⁺纳米微晶中,在980 nm激光激发下,观察到了Tm³⁺的紫外、紫色上转换发射明显增强和来自于Gd³⁺的⁶D_9/2、⁶I_J、⁶P_5/2及⁶P_7/2能级到基态⁸S_7/2能级的紫外发射。通过比较Y_0.8-x-yF₃∶Gd_x³⁺ ,Yb_0.2³⁺,Tm_y³⁺纳米晶样品的上转换发光性质以及Tm³⁺和Gd³⁺中一些激发态的能级寿命,借助于能级图描述了Yb³⁺-Tm³⁺-Ga³⁺之间的有效的能量传递过程。     

Nb XIII离子3d94s2, 3d94s4p, 3d94p2 组态能级结构与跃迁的理论研究

用准相对论Hartree-Fock方法对Nb XIII离子二电子激发组态3d⁹4s², 3d⁹4s4p, 3d⁹4p² 的能级结构做了全面系统的理论计算研究.在对已有研究结果分析的基础上, 运用最小二乘方法对径向积分参数进行了优化计算, 得到了与这些组态有关的电偶极允许跃迁的谱线波长和跃迁概率.计算结果与最新的实验值做了对比分析, 表明本文计算结果是准确的. 研究发现, 波长40.92 nm的谱线, 属于3d⁹4s(¹D)4p²F_7/2–3d⁹ (²D)4s^{2 2}D_5/2 的跃迁谱线, 而不属于3d⁹4s (¹D)4p⁴D_7/2–3d⁹(²D)4s^{2 2}D_5/2 的跃迁谱线, 即上谱项能级为²F_7/2, 而不是⁴D_7/2. 关键词： Nb XIII离子 二电子激发组态 谱线波长 跃迁概率