X射线激光Nd薄膜靶表面氧化特性研究

利用石英晶体振荡技术测量了不同环境中稀土元素Nd薄膜靶表面氧化速率,用俄歇电子能谱,扫描电镜,X射线衍射,X射线光电子能谱分析了Nd薄膜表面氧化过程,发现保存环境对靶的表面氧化行为有重要影响。空气中水分是引起Nd快速氧化的关键因素。表面氧化层为团聚状的非晶结构,氧化物与金属的体各比较小可能是引起Nd薄膜较易氧化的原因。Nd薄膜靶表面覆盖有一层氢氧化物,其厚度按保存在真空、干燥空气和潮湿空气环境而依次递增。     

X射线激光Nd薄膜靶表面氧化特性研究

 利用石英晶体振荡技术测量了不同环境中稀土元素Nd薄膜靶表面氧化速率,用俄歇电子能谱,扫描电镜,X射线衍射,X射线光电子能谱分析了Nd薄膜表面氧化过程,发现保存环境对靶的表面氧化行为有重要影响。空气中水分是引起Nd快速氧化的关键因素。表面氧化层为团聚状的非晶结构,氧化物与金属的体各比较小可能是引起Nd薄膜较易氧化的原因。Nd薄膜靶表面覆盖有一层氢氧化物,其厚度按保存在真空、干燥空气和潮湿空气环境而依次递增。     

基于压电探测判定激光支持燃烧波和爆轰波的点燃阈值

为了获得激光支持燃烧波和爆轰波的点燃阈值,采用压电探测器检测波长为1 064 nm的Nd:YAG激光作用在铝靶表面所产生的应变和冲压。从实验结果观察到压电信号的变化分为3个阶段,分别为光热弹性应变阶段、等离子体增强耦合阶段和激光支持爆轰波对靶表面的压力阶段,并从理论上研究了这3个阶段的激光与靶材料相互作用的机理,从而可以从压电信号是否发生跃变判断出激光支持燃烧波和激光支持爆轰波的点燃阈值,与其它方法所得到结果基本吻合。     

基于压电探测判定激光支持燃烧波和爆轰波的点燃阈值

为了获得激光支持燃烧波和爆轰波的点燃阈值,采用压电探测器检测波长为1 064 nm的Nd:YAG激光作用在铝靶表面所产生的应变和冲压。从实验结果观察到压电信号的变化分为3个阶段,分别为光热弹性应变阶段、等离子体增强耦合阶段和激光支持爆轰波对靶表面的压力阶段,并从理论上研究了这3个阶段的激光与靶材料相互作用的机理,从而可以从压电信号是否发生跃变判断出激光支持燃烧波和激光支持爆轰波的点燃阈值,与其它方法所得到结果基本吻合。     

基于压电探测判定激光支持燃烧波和爆轰波的点燃阈值

为了获得激光支持燃烧波和爆轰波的点燃阈值,采用压电探测器检测波长为1 064nm的Nd:YAG激光作用在铝靶表面所产生的应变和冲压。从实验结果观察到压电信号的变化分为3个阶段,分别为光热弹性应变阶段、等离子体增强耦合阶段和激光支持爆轰波对靶表面的压力阶段,并从理论上研究了这3个阶段的激光与靶材料相互作用的机理,从而可以从压电信号是否发生跃变判断出激光支持燃烧波和激光支持爆轰波的点燃阈值,与其它方法所得到结果基本吻合。     

激光诱导荧光光谱分析法研究(Ⅶ)——SM-DBM-TOPO-农乳-100体系的发光机理及应用

以Nd:YAG激光器为激发光源、硅增强靶型光学多道分析仪作检测器并与IBM PC/XT微机联机进行数据的分析处理,研究了DBM,TOPO和Sm-DBM-TOPO在非离子表面活性剂农乳-100存在下的吸光特性和激光诱导发光特性,提出该体系的发光机理和能量传递机制。不经分离,直接用于高纯稀土氧化物中痕量钐的测定,获得了满意的结果。     

Nd薄膜靶表面氧化过程研究

用Auger电子能谱（AES）对X光激光实验使用的Nd薄膜靶的表面氧化进行了分析,结合Ar离子束刻蚀进行元素的深度分布剖析,得到了表面氧化层厚度,所得结果与Rutherford背散射（RBS）方法测量的结果相吻合。实验表明,样品暴露在空气中20至30min,氧化即基本达到饱和,相应的氧化层厚度约为20nm,氧化层的组分以NdO为主。     

空气中激光等离子体冲击波的传输特性研究

根据球形对称冲击波在自由空间中传播的约束条件,提出了空气中激光等离子体冲击波在中远场的传播公式.并用探针式超声换能器实测了能量为10-110mJ、脉宽为15ns、波长为106μm的Nd∶YAG激光作用于铝靶表面产生的等离子体空气冲击波,用此公式计算的结果与实验数据符合得很好 关键词：     

激光烧蚀金属靶诱导靶电势效应的机理研究

利用Nd∶YAG脉冲激光烧蚀Cu靶材,实验研究了不同激光能量下等离子体诱导靶上电势的演变规律.结果表明：靶上电势信号呈现显著的双峰结构,第一个峰出现在激光烧蚀开始之后约20 ns,持续时间仅约50 ns；而第二个峰出现约35 μs之后,持续时间达到了上百微秒.通过对实验结果的详细分析可知靶上电势信号的产生是激光等离子体荷电效应引起的,并提出了等离子体对金属靶的静电感应、电荷复合-转移效应机制,解释了靶上电势信号的演变规律.     

掺溴聚苯乙烯平面调制箔靶的制备及测量

 平面调制靶是ICF分解实验中的重要用靶。介绍了在过去工作的基础上掺溴聚苯乙烯平面调制箔靶的制备工艺,研究旋转涂覆和流延工艺对靶的表面起伏图形转移的影响,采用SEM观察薄膜表面起伏图形的形貌,对掺杂溴的含量进行测量和控制,以台阶仪测量靶的表面粗糙度。     

稠苯芳杂环及其烷基质子化学位移的计算

本文提出了予测稠苯芳杂环及其烷基链上质子化学位移的计算方法。 将稠苯芳杂环化合物用凯库勒式表示,计算式为为需考虑的苯环内的乙烯基效应。σ_mi,ci为各苯环的环流效应。σ_1,Hc为各芳杂环的屏蔽效应,对杂环上质子它就是该单独芳杂环上相应质子的δ值,对苯环上质子要将它分解为各结构因素的效应,即:σ_1,He=(1/2)^d-1δ_x=y(或σ_z)+σ_c-c·σ_m,H. σ_x-y与σ_z为杂原子或其基团的屏蔽效应,σ_c=c为存在于芳杂环中的乙烯基的效应,σ_m,Hc为芳杂环的环流效应,d为对不同质子所考虑的键数。有取代基时需考虑取代基的效应。计算环上烷基质子的公式为:δ=σ_p,CH3+ασ_c,CH3+βσ_t,CH3+σ_l,G σ_l,G为稠苯芳杂环基的某级效应。     

核磁共振碳谱研究:烷烃化学位移和(CSS)与分子路径指数矢量(VPM)

系统研究了核磁共振碳谱和化学位移规律及其定量构谱关系(QSSR).本文研究了一组十元素分子路径指数矢量VPM,并发现它与烷烃化学位移和CCS有良好线性相关性.采用多元线性回归进行准确估计与预测,结果优良.     

Structural phase transitions at clean and metal-covered Si(111) surfaces investigated by RHEED spot analysis

Structural phase transitions between various kinds of superlattice structures formed on a Si(111) surface have been investigated by spot analysis of reflection high-energy electron diffraction (RHEED). Reversible transitions induced by temperature changes and irreversible ones induced by metal depositions were observed. Detailed discussions on the dynamics of the phase transitions are made by quantitative analyses of integrated spot intensity and profile. For a phase transition of 7′7  1′1 structures on a clean Si(111) surface, a hysteresis with temperature difference of 5°C. between in heating and cooling processes was found in the spot intensity change, indicating a first-order transition. Hysteresis was hardly recognized, on the other hand, for transitions of Au-induced superstructures (5×2-Au or ×-Au)  1×1-Au. The spot profiles were found to be broadened during the transition of Si(111)-×-Au  1×1-Au, which was a signature of a continuous transition, while the profiles remained unchanged during the transitions of the 7×7  1×1 and 5×2-Au  1×1-Au phases. Structural conversions induced by In adsorption on the Si(111) surface kept at constant temperatures were also analyzed. The conversions at room temperature were totally dependent on the initial substrate surface structures; the 7×7 surface did not show any structural conversion with In adsorption, while the ×-In surface successively converted to a 2×2 and a × phase with coverage increase. The structural transitions at elevated temperatures were sensitively dependent on the temperatures. Sequences of transitions among the 7×7, 4×1, ×, 1×, and ×4 were quantitatively revealed as changes in RHEED spot intensity.     

ErP5O14非晶玻璃的红外量子剪裁

研究了Er_1.0P₅O₁₄铒非晶玻璃的红外量子剪裁现象. 从吸收谱和激发光谱的计算比较中肯定了Er_1.0P₅O₁₄非晶 玻璃的1537.0 nm红外荧光为多光子量子剪裁荧光. 从Er_1.0P₅O₁₄非晶玻璃的可见和红外荧光发射光谱中发现激发²H_11/2, ⁴G_11/2和⁴G_9/2能级所导致的⁴I_13/2→⁴I_15/2量子剪裁红外荧光很强;基于自发辐射速率、无辐射弛豫速率和能量传递速率等参数的计算,对其量子剪裁机理进行了分析.发现起源于基态的强下转换能量传递{²H_11/2→⁴I_9/2,⁴I_15/2→⁴I_13/2},{⁴G_11/2→⁴I_13/2, ⁴I_15/2→²H_11/2},{⁴G_9/2→⁴F_7/2,⁴I_15/2→⁴I_13/2}和{⁴G_9/2→⁴I_13/2, ⁴I_15/2→²H_11/2}是导致Er_1.0P₅O₁₄非晶玻璃具有强的三光子和四光子量子剪裁红外荧光的原因.研究结果对改善太阳能电池效率有一定意义.     

Reduced s-d model with antiferromagnetically coupled impurity spins

An antiferromagnetic equivalent-neighbour Heisenberg interaction H_i between impurity spins is added to the reduced s-d Hamiltonian H_r previously introduced by simplifying the Kondo s-d exchange Hamiltonian H_K. Asymptotic mean-field theory is developed for H_r + H_i, in the presence and absence of external magnetic field, and applied to (La_1−xCe_x)Al₂ alloys. Specific heat c_i(T) and zero-field susceptibility χ_i(0,T) curves for (La_1−xCe_x)Al₂ are depicted. The coupling constants of H_r + H_i and conduction bandwidth are adjusted so that T_c temperatures for x = 0.2, 0.1 are equal to the experimental values. c_i(T) exhibits a jump at T_c and is decreasing for T < T_c. χ_i(0,T) has a first order pole at T_c which corresponds to the maximum of experimental susceptibility and χ_i(0,0) > 0. These results improve those obtained earlier on the grounds of H_r theory.     

Interrelations of discrete Painlevé equations through limiting procedures

We study the discrete Painlevé equations associated to the affine Weyl group which can be obtained by the implementation of a special limits of -associated equations. This study is motivated by the existence of two -associated discrete both having a double ternary dependence in their coefficients and which have not been related before. We show here that two equations correspond to two different limits of a -associated discrete Painlevé equation. Applying the same limiting procedures to other -associated equations we obtained several -related equations most of which have not been previously derived.