Surface vibrational excitations of O in the p(2 × 2)O and c(2 × 2)O structures on Ni(100)

Surface vibrational excitations of O chemisorbed on the clean Ni(100) surface have been investigated by high-resolution electron energy loss spectroscopy (EELS). The observed vibrational losses in the Ni(100) p(2 × 2)O and Ni(100) c(2 × 2)O surface structures are 53.0 ± 0.5 and 39.5 ± 0.5 meV respectively. The unexpectedly large change in the vibrational excitation energy is attributed to a low potential barrier for oxygen dissolution into the Ni substrate.     

Low energy electron diffraction and electron spectroscopy studies of the clean (110) and (100) titanium dioxide (rutile) crystal surfaces

Low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), electron energy loss (ELS) and ultraviolet photoemission spectroscopies (UPS) were used to study the structures, compositions and electron state distributions of clean single crystal faces of titanium dioxide (rutile). LEED showed that both the (110) and (100) surfaces are stable, the latter giving rise to three distinct surface structures, viz. (1 × 3), (1 × 5) and (1 × 7) that were obtained by annealing an argon ion-bombarded (100) surface at ~600,800 and 1200° C respectively. AES showed the decrease of the $\text{O(510 eV)}\text{Ti(380 eV)}$ peak ratio from ~1.7 to ~1.3 in going from the (1 × 3) to the (1 × 7) surface structure. Electron energy loss spectra obtained from the (110) and (100)?(1 × 3) surfaces are similar, with surface-sensitive transitions at 8.2, 5.2 and 2.4 eV. The energy loss spectrum from an argon or oxygen ion bombarded surface is dominated by the transition at 1.6 eV. UPS indicated that the initial state for this ELS transition is peaked at ?0.6 eV (referred to the Fermi level E_F in the photoemission spectrum, and that the 2.4 eV surface-sensitive ELS transition probably arises from the band of occupied states between the bulk valence band maximum to the Fermi level. High energy electron beams (1.6 keV 20 μA) used in AES were found to disorder clean and initially well-ordered TiO₂ surfaces. Argon ion bombardment of clean ordered TiO₂ (110) and (100)?(1 × 3) surfaces caused the work function and surface band bending to decrease by almost 1 eV and such decrease is explained as due to the loss of oxygen from the surface.     

EFFECT OF ATOMIC HYDROGEN ON THE ACETYLENE-ADSORBED Si(100)(2×1) SURFACE AT ROOM TEMPERATURE

High resolution electron energy loss spectroscopy, low energy electron diffraction and quadrupole maas spectrometer (QMS) have been employed to study the effect of atomic hydrogen on the acetylene-saturated pre-adsorbed Si(100)(2×1) surface and the surface phase transition at room temperature. It is evident that the atomic hydrogen has a strong effect on the adsorbed C₂H₂ and the underlying surface structure of Si. The experimental results show that CH and CH₂ radicals co-exist on the Si surface after the dosing of atomic hydrogen; meanwhile, the surface structure changes from Si(100)(2×1) to a dominant of (1×1). These results indicate that the atomic hydrogen can open C=C double bonds and change them into C-C single bonds, transfer the adsorbed C₂H₂ to C₂H_x(x = 3,4) and break the underlying Si-Si dimer, but it cannot break the C-C bond intensively. The QMS results show that some C₄ species axe formed during the dosing of atomic hydrogen. It may be the result of atomic hydrogen abstraction from C₂H_x which leads to carbon catenation between two adjacent C-C directs. The C₄ species formed are stable on Si(100) surfaces up to 1100 K, and can be regarded as the potential host of diamond nucleation.     

Chemical adsorption of C60 on diamond (100)(2×1) surfaces

Molecular-dynamics simulations (MDSs) and ab initiocalculations are used to investigate the adsorption behavior of C₆₀ molecules on a clean dimer-reconstructed (100)(2×1) diamond surface. C₆₀ molecules have some probability to be adsorbed on the diamond surface at low incident energy (6∼45 eV). Electron-density contours show strong chemical interaction between C₆₀ molecules and the substrate surface. The adsorption property depends strongly on the incident energy and the impacting point. An incident energy of 18 eV may be an appropriate energy to grow a sub-monolayer or monolayer C₆₀ film on a clean C(100)(2×1) surface at room temperature. Received: 5 July 2000 / Accepted: 17 October 2000 / Published online: 28 February 2001     

The formation of a surface iodide on Ni{100} and adsorption of I2 at low temperatures

Iodine adsorption on clean Ni[100] has been investigated using low energy electron diffraction (LEED) and Auger electron spectroscopy (AES). At temperatures below 340 K. a saturated surface of adsorbed iodine atoms in a c(2 × 2) structure is observed. Adsorption of iodine on clean Ni{100} at temperatures in exces of 370 K forms a structure identified as a single layer of the layered compound NiI₂ on the metal substrate. Solid iodine is shown to grow epitaxially on both the c(2 × 2) chemisorbed surface and the surface iodide at temperatures less than 185 K. Heating to 185 < T < 226 K leaves a physisorbed molecular iodine layer, while on returning to room temperature the original c(2 × 2) or iodide is restored.     

Elemental composition of β-Sic(001) surface phases studied by medium energy ion scattering

β-SiC surfaces have been investigated in terms of surface composition and reconstruction by medium energy ion scattering (MEIS), Auger electron spectroscopy (AES), and low energy electron diffraction (LEED). A (3 × 2) phase is produced by evaporating Si on a β-SiC surface. Heat treatment at 1065°C causes consecutive transformation into (5 × 2), c(4 × 2), (2 × 1), (1 × 1) and c(2 × 2) phases. Quantitative analysis of MEIS spectra shows that the c(4 × 2) surface has a full silicon topmost layer, whereas the c(2 × 2) surface has a full carbon topmost layer. The (3 × 2) and (5 × 2) phases are believed to originate from additional Si dimer rows on top of a Si terminated crystal.     

Adsorption and decomposition of ammonia on W(100); XPS and UPS studies

The adsorption and decomposition of ammonia on a clean and c(2 × 2)-N ordered W(100) surface has been studied by photoemission spectroscopy (XPS and UPS). At 120 K molecularly adsorbed ammonia was identified by N(1s) core level emission at 400.9 eV and the valence emissions at 7.6 and 11.7 eV. By heating the sample stepwise the N(1s) core level shifted to lower binding energy. In the valence region, the corresponding spectral changes were obtained, where the dependence of the peak intensity on photon energy was observed. These observations were interpreted to demonstrate that adsorbed ammonia dissociates its hydrogen successively to form NH_x(a) and finally to atomic nitrogen. On the other hand, ammonia was molecularly adsorbed on a c(2 × 2)-N ordered surface even at temperatures as high as 300 K, although the spectra at 400 K or above were very similar to those under a steady state flow condition, where the tungsten surface was mostly covered by atomic nitrogen. At higher ammonia pressure up to about 100 Pa thicker nitride layers were formed at 700 K, which were characterized by the N(1s) core level at 397.3 eV and a broad emission around 6 eV in the valence level.     

Vibrational excitations of p(2×2) oxygen and c(2×2) hydrogen on Pd(100)

The p(2×2) oxygen and c(2×2) hydrogen structures on Pd(100) have been investigated by angle-resolved high-resolution electron energy loss spectroscopy. Dipole excited vibrational modes are observed at 44 and 64 meV for the oxygen and hydrogen structures respectively and are interpreted to correspond to atomic adsorption in the hollow site.     

A charge density wave model for reconstructed monolayers of Co on Cu(100)

We have grown in ultra high vacuum Co on top of a clean unreconstructed Cu(100) surface. The system shows upon absorption of one third of a Co monolayer a c(2 × 2) structure as low energy electron diffraction measurements reveal. The electronic structure of the 1 × 1 Co-Cu(100) is calculated. We then interpret the c(2 × 2) reconstruction as being due to a ferromagnetic induced charge density wave.     

Room temperature hydrogenation of the Si(001)2 × 1 surface studied by angle-resolved electron energy loss spectroscopy

We observed the hydrogen adsorption on the Si(001)2 × 1 surface achieved at room temperature by angle-resolved electron energy loss spectroscopy (AR-ELS) and elastic low-energy electron diffraction. From measurements of the intensities of elastically diffracted beams, we found a characteristic hydrogen covered surface (called Si(001)2 × 1H(RT) surface in this paper), where all the diffracted beam intensities were enhanced drastically and a sharp 2 × 1 LEED pattern was observed. The angular dependence of the elastically diffracted beams on the 2 × 1H(RT) surface was different from that on the monohydride 2 × 1:H surface. On the 2 × 1H(RT) surface the S₃, transition from the back bond surface state disappeared in contrary to the 2 × 1:H surface and two hydrogen induced transitions were observed at 7.0 and 8.0 eV in AR-ELS spectra. We revealed that the 2 × 1H(RT) surface consisted of the monohydride and the dihydride phases with comparable weights. Additionally, we found the new transition S'₁, ascribed to the newly produced dangling bond surface state due to the rupture of the dimerization bond with hydrogen adsorption.     

Ge(100) surfaces prepared in vapor phase epitaxy process ambient

Ge(100) substrates essential for subsequent III–V integration were studied in the hydrogen ambient of a metalorganic vapor phase epitaxy reactor. We confirmed thermal oxide and carbon removal by X‐ray photoelectron spectroscopy, characterized the (2 × 1)/(1 × 2) surface reconstruction by low energy electron diffraction, and employed reflection anisotropy spectroscopy for optical in situ analysis. Our Ge(100) spectra de‐ viate from reference data of clean surfaces prepared in ultra‐high vacuum, most probably due to the presence of hydrogen bonds. The observation was correlated with Fourier‐transform infrared spectroscopy showing coupled H–Ge–Ge–H stretch modes associated with a monohydride termination of the Ge(100) surface. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Temperature evolution of the surface region of CVD diamond: an electron spectroscopy study

An electron spectroscopic investigation (photoemission and X-ray induced Auger emission) of the near surface region of undoped CVD polycrystalline diamond is presented. The focus is on compositional and structural changes brought about by desorption processes (either photon or thermally induced) and on the associated changes in the material’s properties. Photon and low temperature induced desorption of O containing species, resulting in a clean H terminated diamond surface, is found to decrease the diamond surface conductivity (SC) and to lower the vacuum energy. Electron emission is highly favoured from such a surface, as witnessed by its negative electron affinity (NEA). H desorption at T ≈ 900 °C leads to surface reconstruction and causes both the vacuum energy to rise and the electron energy levels to bend downwards. As a result, the diamond electron affinity is driven from negative to positive. At T = 1050 °C, the first stages of a graphitization process that propagates from the surface inwards are revealed by an increasing conductivity in the film surface region, though still not by the development of graphitic features in the spectra.     

Low-energy electron diffraction and auger electron spectroscopy study of the oxidation of Ti {0001} at room temperature

The reaction of a clean Ti (0001) surface with oxygen gas at low pressure and room temperature has been studied with low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES). At low exposures (about 1 Langmuir) ap(2×2) superstructure is observed which gradually converts to 1×1 at high exposures (about 100 Langmuirs). The LEED spectra confirm that the final 1×1 structure is different from that of clean Ti (0001), while the AES spectra indicate that the final oxide is probably TiO, not TiO₂. The plausibility of this indication is discussed.     

Atomic configurations during Si incorporation on GaAs(001) in As atmosphere evidenced by reflectance difference spectroscopy

The structural ordering of surface atoms during Si deposition on singular and vicinal GaAs(001) surfaces has been studied by reflectance difference (RD) spectroscopy using the difference function between the Si-covered and the bare surface. In dependence on the Si coverage the difference spectra correspond to RD spectra of the bare Si(001)-(1×2) or of the As-terminated Si(001):As(2×1) surface. This finding and the behaviour of RD transients recorded at 3.8 eV photon energy allows to define a (3×2)α phase with Si dimers in the top layer and Ga dimers in the third layer, and a (3×2)β phase with As-dimer rows on top of Si in the second layer.     

Effect of surface reconstruction on the adsorption of Ge on clean Si(111)

The effect of ultrahigh vacuum deposition of Ge below and at monolayer (ML) coverage onto a 7 × 7 reconstructed clean Si(111) surface held at room temperature is studied by low energy electron diffraction (LEED), Auger electron spectroscopy (AES) and photoemission yield spectroscopy (PYS). The results are compared to those obtained on 2 × 1 reconstructed clean Si(111) : (i) the Si dangling bond states are replaced by Ge dangling bond states at submonolayer coverages in both cases; (ii) the 7 × 7 reconstruction persists below 1 ML, it is not replaced by a ? 3 × ? 3 R30° at 1/3ML as it was on the 2 × 1; and (iii) the coverage below 1 ML is not homogeneous on the 7 × 7 reconstruction. This behaviour can be explained by the influence of the inhomogeneties associated with the 7 × 7 reconstruction.     

Surface vibrations on clean and hydrogen saturated W(100)

Electron energy loss Spectroscopy (EELS) and lattice dynamical calculations are used to investigate the vibrational properties of surface phonons and adsorbate phonons on clean and hydrogen-saturated W(100). Two distinct intrinsic surface vibrations are observed in specular scattering geometry. One of the surface modes is attributed to a surface resonance of a bulk longitudinal phonon at the hydrogen-stabilized (1×1) surface. The second surface mode occurs only on the low-temperature-stabilized c(2×2) [011] displacement surface. Detailed experimental studies and lattice dynamical analysis of the hydrogen-saturated W(100) surface account for a new hydrogen-derived loss peak at 118 meV in terms of an optic mode of the adsorbed layer. Experimental evidence of impact scattering resonances under certain kinematic conditions are observed.     

Adsorption of hydrogen on palladium single crystal surfaces

The adsorption of hydrogen on clean Pd(110) and Pd(111) surfaces as well as on a Pd(111) surface with regular step arrays was studied by means of LEED, thermal desorption spectroscopy and contact potential measurements. Absorption in the bulk plays an important role but could be separated from the surface processes. With Pd(110) an ordered 1 × 2 structure and with Pd(111) a 1 × 1 structure was formed. Maximum work function increases of 0.36, 0.18 and 0.23 eV were determined with Pd(110), Pd(111) and the stepped surface, respectively, this quantity being influenced only by adsorbed hydrogen under the chosen conditions. The adsorption isotherms derived from contact potential data revealed that at low coverages θ ∞ √p_H2, indicating atomic adsorption. Initial heats of H₂ adsorption of 24.4 kcal/mole for Pd(110) and of 20.8 kcal/mole for Pd(111) were derived, in both cases E_ad being constant up to at least half the saturation coverage. With the stepped surface the adsorption energies coincide with those for Pd(111) at medium coverages, but increase with decreasing coverage by about 3 kcal/mole. D₂ is adsorbed on Pd(110) with an initial adsorption energy of 22.8 kcal/mole.     

Sulfur dioxide adsorption and reaction with atomic oxygen on the Ag(110) surface

The adsorption of SO₂ on Ag(110) and the reaction of SO₂ with oxygen adatoms have been studied under ultrahigh vacuum conditions using low energy electron diffraction, temperature programmed reaction spectroscopy and photoelectron spectroscopy. Below 300 K, SO₂ adsorbs molecularly giving p(1×2) and c(4×2) LEED patterns at coverages of one half and three quarter monolayers. respectively. At intermediate coverages, streaked diffraction patterns, similar to those reported for noble gas and alkali metal adsorption on the (110) face of face-centered cubic metals were observed, indicating adsorption out of registry with the surface. A feature at low binding energy in the ultraviolet photoemission spectrum appeared which was assigned to a weak chemisorption bond to the surface via the sulfur, analogous to bonding observed in SO₂-amine charge transfer complexes and in transition metal complexes. SO₂ exhibited three binding states on Ag(110) with binding energies of 41, 53 and 64 kJ mol^?1; no decomposition on clean Ag(110) was observed. On oxygen pretreated Ag(110), SO₂ reacted with oxygen adatoms to form SO_3(a), as determined by X-ray photoelectron spectroscopy. Reacting preadsorbed atomic oxygen in a p(2 × 1) structure with SO₂ resulted in a c(6 × 2) pattern for SO_3(a). The adsorbed SO_3(a) decomposed and disproportionated upon heating to 500 K to yield SO_2(g), SO_4(a) and subsurface oxygen.     

用低能电子衍射研究氢在Si(100)表面吸附引起的相变

描述了用低能电子衍射(LEED)研究不同温度下在Si(100)-c(8×8)表面吸氢引起的一系列相变过程。实验发现:在液氮温度下,在Si(100)-c(8×8)表面连续吸氢将引起表面经Si(100)-(4×1)-H向(2×1)-H最终向(1×1)-H转变;而在从700℃到室温间的不同温度下饱和吸氢,实验中观察到:Si(100)-c(8×8)表面将先转变至Si(100)-c(4×4)-H,然后至(2×1)-最终至(1×1)-H。     

The Si (100) surface: Symmetric or asymmetric dimers?

We present new results obtained with medium energy ion beam crystallography on the clean Si (100)?(2 × 1) surface. This study, meant to discriminate between symmetric and asymmetric dimer models for the reconstruction, shows that symmetric dimers are not consistent with our results. We conclude that the Si (100)?(2 × 1) surface is reconstructed in asymmetric dimers, accompanied by extensive subsurface distortions.