A computational study of the electron detachment energies of Al2As2 − and Al3As3 −

Ab initio and density functional theory calculations are reported for the low-lying electronic states of Al₂As₂ ^?, Al₂As₂, Al₃As₃ ^?, and Al₃As₃. The ²B_2g ground electronic state of Al₂As₂ ^? has a rhombic structure with the Al atoms occupying the shorter diagonal. In contrast, the As atoms occupy the shorter diagonal of the ground state rhombic structure of Al₂As₂. Electron detachment energies computed for Al₂As₂ ^? are presented and discussed. The adiabatic electron affinity of Al₂As₂ ^? is calculated to be 2.1 eV at the CCSD(T) level, using B3LYP and MP2 optimized geometries. The ground states of both Al₃As₃ ^? (²A₁′) and Al₃As₃ (¹A₁′) have planar hexagonal D_3h geometry. Electron detachment energies computed for the anion are reported. At the CCSD(T)//B3LYP level, the electron affinity of Al₃As₃ is calculated to be 2.47 eV.     

Study of As-Sb-Se chalcogenide glasses by NQR and EPR spectroscopy methods

In this paper experimental results obtained by both ⁷⁵As NQR and EPR spectroscopy are presented for the three-component system As-Sb-Se. The ⁷⁵As NQR spectra of glasses of structures (As₂Se₃)_0.78 (Sb₂Se₃)_0.22, (As₂Se₃)_0.75 (Sb₂Se₃)_0.25, (As₂Se₃)_0.5 (Sb₂Se₃)_0.5 have broad lines with two Sb-NQR lines (corresponding to the Sb₂Se₃ units) and two ⁷⁵As-NQR lines (corresponding to the As₂Se₃ units). Differences in the EPR spectra of the different glasses arise because of the different amounts of arsenic and antimony in their structure.     

ESR in X-irradiated As2O3 glass

X-irradiation of glassy As₂O₃ at 77K or 300K produces an unusually large density (～5×10¹⁸ cm^-3) of paramagnetic centers which are stable at 300K. The average spin-Hamiltonian parameters (g = 1.998, g_⊥ = 1.984, A₆ = 243G, A_⊥ = 114G) indicate that these centers are analogous to those previously observed in As₂Se₃ and As₂S₃ glasses and that they consist of unpaired electrons localized on a non-bonding 4p orbital of an As atom. Unlike the results obtained for As₂Se₃ and As₂S₃, the concommitant holes in As₂O₃ are trapped on Fe²⁺ impurity sites which become Fe³⁺ and not on non-bonding oxygen p orbitals. The radiation induced ESR is also accompanied by a stable optical absorption tail which lies within the band gap and increases exponentially with energy. This absorption can be partially bleached with the application of sub-band-gap light.     

硫系非晶半导体薄膜中的超快光 Kerr效应

利用飞秒激光超外差光Kerr(OHD-OKE)技术研究了As₂S₃, As₂Se₃, GeS₂, GeSe₂, Ge₂₀As₂₅S₅₅, Ge₂₀As₂₅Se₅₅, Ge₁₀As₄₀S_{20关键词： 全光开关 硫系非晶半导体薄膜 飞秒激光超外差光Kerr(OHD-OKE) 三阶非线性}     

Photoinduced transformations in (As1–xBix)2S3 glass observed by Raman spectroscopy

Raman spectra of (As_1–xBi_x)₂S₃ glass samples with x ≤ 0.2 measured at the excitation with above-bandgap (532 nm) laser light at a relatively low power density (P_exc = 4 kW/cm²) clearly confirm the amorphous character, thereby markedly extending the known compositional interval of existence of the (As_1–xBi_x)₂S₃ glass previously known (x ≤ 0.06). Spectra measured at an increased P_exc (40 kW/cm²) reveal a photostructural transformation in the illuminated area of the glass leading to an additional contribution of Bi–S bonds as well as to an increasing number of cage-type As₄S₄ units with homopolar As–As bonds. A number of new features in a broad range up to about 1,000 cm⁻¹, which emerge in the Raman spectra of the (As_1–xBi_x)₂S₃ glasses with high (x ≥ 0.14) Bi content and increase in intensity with the exposure time, are related to a photochemical transformation, namely, oxidation of arsenic and sulphur on the (As_1–xBi_x)₂S₃ glass surface with formation of units containing arsenate AsO₄³⁻ and sulphate SO₄²⁻ ions. These processes are irreversible and occur only in the presence of a sufficient amount of bismuth.     

Investigation of electronic properties of crystalline arsenic chalcogenides: Theory and experiment

The electronic structure of crystalline As₂S₃ and As₂Se₃ has been calculated in this paper. We present the energy bands, density of states (DOS) and the Compton profiles using the linear combination of atomic orbitals (LCAO) scheme based on the density functional theory (DFT). From the calculated total and partial density of states it is seen that the lone-pair p-states of sulphur/selenium contribute closest to the Fermi energy level. To interpret the theoretical data on the Compton line shape, we have measured the Compton profiles on a 100 mCi ²⁴¹Am spectrometer. It is seen that the density functional theory within generalised gradient approximation gives a slightly better agreement with the experimental momentum densities. The nature of chemical bonding in arsenic chalcogenides is studied using Mulliken's population analysis and the experimentally measured equal-valence-electron-density profiles; As₂S₃ is found to be more ionic compared to As₂Se₃.     

Cobalt ion as a structural probe in PbO–As2O3 glass ceramics

PbO–As₂O₃ glasses mixed with different concentrations of CoO (ranging from 0 to 1.0 mol%) were crystallized. The samples were characterized by X-ray diffraction, scanning electron microscopy, EDS and differential scanning calorimetric techniques. The X-ray diffraction studies have indicated the presence of Pb(As₂O₆), Pb₃(AsO₄)₂, Co₆As₂O₁₁, Co₃O₄ crystalline phases in these samples. Optical absorption, IR and photoluminescence studies of these samples have been carried out. The analysis of the results of these studies has indicated that the cobalt ions exist in Co²⁺ and Co³⁺ states in the glass matrix. The studies have further revealed that as the concentration of the CoO is increased, there is a gradual transformation of cobalt ions from tetrahedral to octahedral positions.     

Surface segregation of InGaAs films by the evolution of reflection high-energy electron diffraction patterns

Surface segregation is studied via the evolution of reflection high-energy electron diffraction (RHEED) patterns under different values of As 4 BEP for InGaAs films. When the As 4 BEP is set to be zero, the RHEED pattern keeps a 4×3/(n×3) structure with increasing temperature, and surface segregation takes place until 470 C. The RHEED pattern develops into a metal-rich (4×2) structure as temperature increases to 495 C. The reason for this is that surface segregation makes the In inside the InGaAs film climb to its surface. With the temperature increasing up to 515 C, the RHEED pattern turns into a GaAs(2×4) structure due to In desorption. While the As 4 BEP comes up to a specific value (1.33×10 4 Pa–1.33×10 3 Pa), the surface temperature can delay the segregation and desorption. We find that As 4 BEP has a big influence on surface desorption, while surface segregation is more strongly dependent on temperature than surface desorption.     

Rotational analysis ofA 1Π-X 1Σ+ bands of As14N and As15N: perturbation studies in theA 1Π state

The ultraviolet bands ofA ¹Π-X ¹Σ⁺ system of As¹⁴N and its isotopic species As¹⁵N were excited in a quartz tube containing specpure nitrogen and traces of AsCl₃ vapour, using a microwave discharge (2450 MHz). Bands of As¹⁵N were obtained using¹⁵N₂ enriched to 95.5%. Rotational structure of several bands of As¹⁴N and As¹⁵N photographed under high dispersion (0.14 Å/mm) was reanalysed. Detailed studies of the observed perturbations in the levels ofν′ = 0 to 4 led to the identification of two³Σ^? and aC ¹Σ^? states. Molecular parametersT _e, ω_e, ω_ex_e, B_eandα _ewere determined for all the electronic states studied. Vibrational assignments of the perturbing levels were made using the isotope shift studies.     

A deep insight into arsenic adsorption over γ-Al2O3 in the presence of SO2/NO

Arsenic is easily evaporated during coal combustion, which not only raises serious environmental concerns but also results in the deactivation of catalyst in selective catalytic reduction (SCR) systems. It is a promising method to use sorbents for the capture of arsenic vapors (As₂O₃(g)) before As-containing flue gas entering SCR catalyst. However, arsenic has a strong affinity with sulfur in coal and SO₂ in the coal combustion flue gas strongly suppresses As₂O₃(g) capture by typical Ca/Fe-based sorbents. This study estimated the selective capture of As₂O₃(g) by γ-Al₂O₃ and the effects of SO₂ and NO on the arsenic adsorption were investigated. The results showed that As₂O₃(g) adsorption over γ-Al₂O₃ was effectively conducted at temperatures ranging from 300 to 400 °C. In the reacted γ-Al₂O₃, arsenic was predominantly in the form of As³⁺ through reactions with Al-O bonds and positive charged alumina ions. SO₂ was slightly adsorbed on γ-Al₂O₃, which had a limited effect on arsenic adsorption. The adsorption of SO₂ on γ-Al₂O₃ mainly occurred on the sites of hydroxyl groups (Al-OH) and few adsorbed SO₂ was bound with positive charged alumina ions. NO was catalytically oxidized by γ-Al₂O₃ and released as NO₂. Nevertheless, NO competed with As₂O₃(g) to adhere to positive charged alumina ions and strongly suppressed arsenic adsorption over γ-Al₂O₃. Fortunately, in the presence of SO₂, NO was mostly transformed into intermediate (-SO₃NO) at the sites of Al-OH on γ-Al₂O₃. As a result, the adverse effect of NO on the adsorption of As₂O₃(g) was weakened.     

Electrical properties of nickel-doped arsenic trisulphide

Results of temperature and frequency dependent a.c. conductivity of pure and nickel-doped a-As₂S₃ are reported. The a.c. conductivity of pure As₂S₃ obeys a well-known relationship: σ_ac ∝ω ^s. Frequency exponents is found to decrease with increasing temperature. Correlated barrier hopping (CBH) model successfully explains the entire behaviour of a.c. conductivity with respect to temperature and frequency for pure As₂S₃. But a different behaviour of a.c. conductivity has been observed for the nickel doped As₂S₃. At higher temperatures, distinct peaks have been observed in the plots of temperature dependence of a.c. conductivity. The frequency dependent behaviour of a.c. conductivity (σ_ac ∝ω ^s) for nickeldoped As₂S₃ is similar to pure As₂S₃ at lower temperatures. But at higher temperatures, ln σ_ac vs lnf curves have been found to deviate from linearity. Such a behaviour has been explained by assuming that nickel doping gives rise to some neutral defect states (D ^0′) in the band gap. Single polaron hopping is expected to occur between theseD ^0‘ andD ⁺ states. Furthermore, allD ⁺,D ^0′ pairs are assumed to be equivalent, having a fixed relaxation time at a given temperature. The contribution of this relaxation to a.c. conductivity is found to be responsible for the observed peak in the plots of temperature dependence of a.c. conductivity for nickel-doped As₂S₃. The entire behaviour of a.c. conductivity with respect to temperature and frequency has been explained by using CBH and “simple pair” models. Theoretical results obtained by using these models, have been found to be in agreement with the experimental results.     

Isothermal capacitance transient spectroscopy (ICTS) study for midgap levels in Hb-GaAs by rapid thermal annealing

We studied the midgap levels by using isothermal capacitance transient spectroscopy (ICTS) in Hb-GaAs which had been processed by rapid thermal annealing (RTA). As the annealing time at 850 °C increased, the EL2 trap (E _c–0.81 eV) was transformed to the EX2 trap (E _c–0.73 eV) and eventually to the EX1 trap (E _c–0.87 eV). The diffusivity of the EL2 trap obtained from the experimental result of the heat treatment was about 1.02·10^–8cm²/s at 850 °C. This result indicate that the EL2 trap contains an interstitial arsenic atom. The result of the transformation to the EX1 and EX2 traps suggests that, when the EL2 trap is V_AsAS_iV_GaAs_Ga, the EX2 trap may be V_AsV_GaAs_Ga, which As_i is diffused out during a thermal annealing.     

Kinetics of photo‐darkening and self‐bleaching in amorphous As2S3 and As2Se3 thin films

The kinetics of photo‐darkening of amorphous As₂S₃ and a‐As₂Se₃ thin films follows a single exponential, but the magnitude and the rate of the process is higher in case of As₂S₃. The kinetics of self‐bleaching (dark relaxation) in advance photo‐darkened state follows a stretched exponential (SRE) with different stretching parameter for a‐As₂S₃ and a‐As₂Se₃. Within the J. C. Phillips approach we suppose that photo‐darkening in amorphous As₂S₃ films is, to some extent, accompanied by changes in short‐range order interactions, while photo‐darkening of amorphous As₂Se₃ is accompanied rather by changes in Coulomb interactions. The self‐bleaching process reduced the magnitude of photo‐darkening up to 45% and 60% for amorphous As₂S₃ and As₂Se₃ films, respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Magnetic hyperfine field of arsenic in nickel by NMR/ON of71,72As

The magnetic hyperfine splitting frequencies of⁷¹AsNi and⁷²AsNi in a 0.11 Tesla external magnetic field have been determined by NMR/ON method as 66.00(6) MHz and 106.17(13) MHz respectively. Using the known magnetic moments of μ(⁷¹As)=1.6735(18) and μ(⁷²As)=−2.1566(3), the hyperfine fields were deduced asB _hf(⁷¹AsNi)=12.824(19) Tesla andB _hf(⁷²AsNi)=12.807(16) Tesla.     

Infrared properties of AsχTe1−χ glasses

Infrared reflection and transmission measurements in As_χTe_1?χ glasses (45?×?55) show well-defined Gaussian vibrational absorption peaks. Comparisons with spectra observed in crystalline and glassy As₂S₃ and As₂Se₃ indicate that the local order in As_χTe_1?χ glasses is not like that found in crystalline As₂Te₃, but rather it consists primarily of AsTe₃ pyramids which are probably linked together in a fashion similar to that found in As₂S₃ and As₂Se₃.     

Spectroscopic investigations on PbO–As2O3 glasses crystallized with TiO2

PbO–As₂O₃ glasses mixed with different concentrations of TiO₂ (ranging from 0 to 1.0 mol%) were crystallized. The samples were characterized by X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy (EDS) techniques. Studies were extended to optical absorption, IR, ESR, luminescence and magnetic susceptibility on these samples. The X-ray diffraction studies reveal the presence of Pb₃O₄, Ti(As₂O₇), Pb(As₂O₆), Pb₃(AsO₄)₂ PbTi₃O₇ and Ti₂O₃ crystal phases. The optical absorption studies together with ESR and magnetic susceptibility measurements indicated that the titanium ions exist in both Ti³⁺ and Ti⁴⁺ states in all the samples and there is an increase in titanium ions in the trivalent state with increasing concentration of nucleating agent TiO₂. The quantitative analysis of these results indicated that there is a growing degree of disorder in the glass network with increasing concentration of the crystallizing agent. The luminescence studies indicated that the samples crystallized with low concentrations of TiO₂ show high luminescence efficiency in the visible region.     

A study of the nonlinear refractive index in amorphous Ge–As–S layers and nanocomposites with gold nanoparticles

Nonlinear refractive indices of simple and composite chalcogenide glasses with gold nanoparticles are measured by the Z-scan method using a femtosecond Ti:sapphire laser with a central wavelength of 800 nm and a pulse duration of 40 fs. It is shown that introduction of nanoparticles into thin layers of amorphous GeS₂, As₃₀Ge₂₀S₅₀, and As₃Ge₃₅S₆₂ leads to a decrease in the total nonlinear refractive index due to additional absorption of femtosecond laser radiation without efficient excitation of localized plasmons outside the resonance region. For example, the nonlinear refractive index decreases with addition of gold nanoparticles from 16.1 × 10^–12 to 13.0 × 10^–12 cm²/W for GeS₂, from 3.9 × 10^–12 to 3.2 × 10^–12 cm²/W for As₃₀Ge₂₀S₅₀, and from 5.8 × 10^–12 to 4.7 × 10^–12 cm²/W for As₃Ge₃₅S₆₂.     

Comparative study of electronic structure of new superconductors (Sr, Ca)Pd2As2 and related compound BaPd2As2

This paper presents the comparative study of LDA calculated electronic structure of new isostructural to iron based systems superconductors (Sr, Ca)Pd₂As₂ with T _c about 1 K and similar but structurally different system BaPd₂As₂. Despite chemical formula looks similar to iron superconductors and even main structural motif is the same—layers of Fe square lattices, electronic structure of (Sr, Ca)Pd₂As₂ and BaPd₂As₂ differs from Fe (As, Se)-HTSC completely. All these systems have essentially three dimensional Fermi surfaces in contrast to Fe (As, Se) materials. The Fermi level is crossed by low intensive tails of Pd-4d and As-4p states. However, (Sr, Ca)Pd₂As₂ and BaPd₂As₂ materials have rather well developed peaks of Pd-4d (x ² ? y ²) band. Thus, by doping of about 2 holes per unit cell one can increase density of states at the Fermi level by a factor about 2.5. Since experimentally these compounds were found to be simple BCS superconductors the hole doping may considerably increase T _c . LDA calculated total densities of states at the Fermi level for stoichiometric systems perfectly agree with experimental estimates signifying rather small role of electronic correlations.     

Optical limiting in fullerenes, colloidal metal solutions, and semiconductors in the field of pico-and nanosecond pulses of an Nd:YAG laser

Optical limiting of pico-and nanosecond pulsed radiation of a Nd:YAG laser (λ=1064 and 532 nm) is studied in solutions of fullerenes (C₆₀ and C₇₀), semiconductor crystals and films (GaAs, As₂S₃, As₂₀S₈₀, 2As₂S₃/As₂Se₃, and 3As₂S₃/As₂Se₃), and colloidal solutions of metals (Au, Ag, Pt, and Cu). The effect of the particle aggregation in silver solutions on the optical limiting is considered. Optical limiting mechanisms, specifically, reverse saturable absorption, two-photon absorption, and self-action effects, are discussed. Nonlinear absorption coefficients of the studied materials are measured.     

Micro‐Raman spectroscopic investigations of extremely scarce Pb–As sulfosalt minerals: baumhauerite,dufrénoysite,gratonite, sartorite,and seligmannite

The overmuch rare lead arsenic sulfosalts, baumhauerite (Pb₃As₄S₉), dufrénoysite (Pb₂As₂S₅), gratonite (Pb₉As₄S₁₅), sartorite (PbAs₂S₄), and seligmannite (PbCuAsS₃), were investigated by Raman spectroscopy. Raman spectra of the investigated minerals arise from the stretching and bending modes of the isolated and interconnected AsS₃ pyramidal groups. The As–S stretching vibrations of the studied minerals occur between 390 and 340 cm⁻¹, whereas those of S–As–S bending modes between 335 and 220 cm⁻¹. The shorter bond distances of the As–S readily elucidate the blue shift from seligmannite to gratonite, sartorite, dufrénoysite, and baumhauerite and the increase in full width at half maximum in similar modes. Copyright © 2016 John Wiley & Sons, Ltd.