Exciton-plasma Mott transition in CdSe at 77K

Photoluminescence spectra of CdSe obtained in conditions of moderate excitation densities show anomalies in the behavior of peak position and intensity. These anomalies, on the basis of the optical gain and in the shift of peak position to lower energy side, are ascribed to the onset of an exciton-plasma Mott-transition in the photoexcited semiconductor.     

Mott transition in anharmonic confinement

Two effects are identified that affect the visibility of the Mott transition in an atomic gas in an optical lattice confined in a power-law potential. The transition can be made more pronounced by increasing the power law, but at the same time, experimental uncertainty in the number of particles will induce corresponding fluctuations in the measured condensate fraction. Calculations in two dimensions indicate that a potential slightly more flat-bottomed than a quadratic one is to be preferred for a wide range of particle number fluctuation size.     

Mach-Zehnder interferometer-based all-optical reversible logic gate

In recent years, reversible logic has emerged as a promising computing paradigm having application in low-power CMOS, quantum computing, nanotechnology and optical computing. Optical logic gates have the potential to work at macroscopic (light pulses carry information), or quantum (single photons carry information) levels with great efficiency. However, relatively little has been published on designing reversible logic circuits in all-optical domain. In this paper, we propose and design a novel scheme of Toffoli and Feynman gates in all-optical domain. We have described their principle of operations and used a theoretical model to assist this task, finally confirming through numerical simulations. Semiconductor optical amplifier (SOA)-based Mach-Zehnder interferometer (MZI) can play a significant role in this field of ultra-fast all-optical signal processing. The all-optical reversible circuits presented in this paper will be useful to perform different arithmetic (full adder, BCD adder) and logical (realization of Boolean function) operations in the domain of reversible logic-based information processing.     

Mott insulation in transition metal compounds

The conditions for the occurance of Mott insulation and its disappearance in transition metal compounds are investigated. It is found, that transition metal compounds with less than fived-electrons may be good examples of Mott Insulators, while those with more than fived-electrons should more properly be termed charge transfer compounds.     

Subpicosecond time-resolved Mott transition in CuCl

The Mott transition in CuCl from a metallic phase of free electrons and holes towards an insulating phase of bound particles (excitons or biexcitons) has been studied by time-resolved luminescence with a resolution slightly better than 1 ps. The phase change takes place in a very short but finite time (about 3 ps) at a carrier density N 10¹⁹ cm^-3.     

The Mott transition in cold semiconductors

We discuss the Mott transition when a semiconductor is externally excited at low temperatures. We demonstrate that hysteresis is inevitable unless a phase separation occurs at higher temperatures or lower average excitation densities than necessary for the predicted ionization catastrophe. The critical temperature and pair density for hysteresis in Ge is of the order 6K and 3 · 10¹⁶ cm^-3, respectively, for a model involving dynamical screening.     

Mott transition in ruby lattice Hubbard model

Mott transition in a ruby lattice with fermions described by the Hubbard model including on-site repulsive interaction is investigated by combining the cellular dynamical mean-field theory and the continuous-time quantum Monte Carlo algorithm. The effect of temperature and on-site repulsive interaction on the metallic–insulating phase transition in ruby lattice with fermions is discussed based on the density of states and double occupancy. In addition, the magnetic property of each phase is discussed by defining certain magnetic order parameters. Our results show that the antiferromagnetic metal is found at the low temperature and weak interaction region and the antiferromagnetic insulating phase is found at the low temperature and strong interaction region. The paramagnetic metal appears in whole on-site repulsive interaction region when the temperature is higher than a certain value and the paramagnetic insulator appears at the middle scale of temperature and on-site repulsive interaction.     

完全由电子关联驱动的Mott型金属--绝缘体相变研究

Mott金属－绝缘体相变（MIT）是凝聚态物理中的一个非常基本的概念.长期以来,Mott型MIT的概念被广泛应用于凝聚态物理的许多领域,特别是用于描述强关联系统的电子结构特征.然而到目前为止,完全由电子关联驱动的MIT并没有被观察到.因此,是否存在着完全由于电子之间的强关联效应导致的Mott型MIT一直是科学家们感兴趣的重要问题.近日,中国科学院物理研究所方忠研究员组、郭建东研究员组和美国Florida International大学的Jiandi Zhang教授研究组及美国Tennessee大学及橡树岭国家实验室的E. W. Plummer教授研究组、Rong Ying Jin教授研究组合作,通过实验与理论相结合的研究,在Ca1.9Sr0.1RuO4表面首次实现了纯电子驱动的Mott型MIT,发生电子结构相变时并没有相应的结构畸变出现.该研究成果对于人们认识电子-电子关联效应引起的Mott转变具有非常重要的意义.     

Mott transition in the two-dimensional Hubbard model

Spectral properties of the two-dimensional Hubbard model near the Mott transition are investigated by using cluster perturbation theory. The Mott transition is characterized by freezing of the charge degrees of freedom in a single-particle excitation that leads continuously to the magnetic excitation of the Mott insulator. Various anomalous spectral features observed in cuprate high-temperature superconductors are explained in a unified manner as properties near the Mott transition.     

Dielectric catastrophe at the Mott transition

We study the Mott transition as a function of interaction strength in the half-filled Hubbard chain with next-nearest-neighbor hopping t' by calculating the response to an external electric field using the density matrix renormalization group. The electric susceptibility chi diverges when approaching the critical point from the insulating side. We show that the correlation length xi characterizing this transition is directly proportional to fluctuations of the polarization and that chi approximately xi2. The critical behavior shows that the transition is infinite order for all t', whether or not a spin gap is present, and that hyperscaling holds.     

完全由电子关联驱动的Mott型金属-绝缘体相变研究

Mott金属-绝缘体相变(MIT)是凝聚态物理中的一个非常基本的概念.长期以来,Mott型MIT的概念被广泛应用于凝聚态物理的许多领域,特别是用于描述强关联系统的电子结构特征.然而到目前为止,完全由电子关联驱动的MIT并没有被观察到.因此,是否存在着完全由于电子之间的强关联效应导致的Mott型MIT一直是科学家们感兴趣的重要问题.近日,中国科学院物理研究所方忠研究员组、郭建东研究员组和美国Florida International大学的Jiandi Zhang教授研究组及美国Tennessee大学及橡树岭国家实验室的E.W.Plummer教授研究组、Rong Ying Jin教授研究组合作,通过实验与理论相结合的研究,在Ca1.9Sr0.1RuO4表面首次实现了纯电子驱动的Mott型MIT,发生电子结构相变时并没有相应的结构畸变出现.该研究成果对于人们认识电子-电子关联效应引起的Mott转变具有非常重要的意义.     

Mott transition of the electron-hole liquid in Ge

A treatment is given of the Mott transition of a gas of excitons in equilibrium with electron-hole droplets in Ge. We find that transition occurs near 4K. We can come to no firm conclusion whether the Mott transition is a first-order transition separate from the liquid-gas transition, as has been suggested.     

Dynamic vortex Mott transition in triangular superconducting arrays

The proximity-coupled superconducting island arrays on a metallic film provide an ideal platform to study the phase transition of vortex states under mutual interactions between the vortex and potential landscape. We have developed a top-down microfabrication process for Nb island arrays on Au film by employing an Al hard mask. A current-induced dynamic vortex Mott transition has been observed under the perpendicular magnetic fields of $f$ magnetic flux quantum per unit cell, which is characterized by a dip-to-peak reversal in differential resistance d$V$/d$I$ vs. $f$ curve with the increasing current. The d$V$/d$I$ vs. $I$ characteristics show a scaling behavior near the magnetic fields of $f= {1}/{2}$ and $f=1$, with the critical exponents $\varepsilon$ of 0.45 and 0.3, respectively, suggesting different universality classes at these two fields.     

Mott transition of excitons in coupled quantum wells

In this work we study the phase diagram of indirect excitons in coupled quantum wells and show that the system undergoes a phase transition to an unbound electron-hole plasma. This transition is manifested as an abrupt change in the photoluminescence linewidth and peak energy at some critical power density and temperature. By measuring the exciton diamagnetism, we show that the transition is associated with an abrupt increase in the exciton radius. We find that the transition is stimulated by the presence of direct excitons in one of the wells and show that they serve as a catalyst of the transition.     

Vanishing of the Mott transition in semiconductor nanocrystals

The dynamics of the system of photoexcited electron–hole pairs in semiconductor nanocrystals of different size with increasing excitation intensity was experimentally studied by utilizing the luminescence spectra of semiconductor-doped glasses in order to elucidate the peculiarities of many-body effects in structures approaching the zero-dimensional limit. Vanishing of effects causing the Mott transition in bulk crystals was observed with decreasing nanocrystal radius, and a new type of transformation of excitons to unbound electron–hole pairs was shown to take place in nanocrystals where the energy shift for electrons and holes due to quantum confinement becomes comparable with the exciton binding energy.     

First-order isostructural Mott transition in highly compressed MnO

We present evidence for an isostructural, first-order Mott transition in MnO at 105+/-5 GPa, based on high-resolution x-ray emission spectroscopy and angle-resolved x-ray diffraction data. The pressure-induced structural and spectral changes provide a coherent picture of MnO phase transitions from paramagnetic B1 to antiferromagnetic distorted B1 at 30 GPa, to paramagnetic B8 at 90 GPa, and to diamagnetic B8 at 105+/-5 GPa. The last is the Mott transition, accompanied by a significant loss of magnetic moment, an approximately 6.6% volume collapse and the insulator-metal transition as demonstrated by recent resistance measurements.     

Excitonic absorption above the Mott transition in Si

We present experimental evidence for the existence of excitonic states above the excitonic Mott transition in both highly doped and highly excited silicon. Previous limitations to resolve the fundamental absorption edge of Si at dense carrier plasmas are overcome employing a novel spatially and time-resolved spectroscopy. We show that the obtained density dependent excess absorption at 75 K represents an excitonic enhancement effect, which is attributed to persisting many-body interactions.